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TW200603234A - Indium oxide-based thin film transistors and circuits - Google Patents

Indium oxide-based thin film transistors and circuits

Info

Publication number
TW200603234A
TW200603234A TW094119519A TW94119519A TW200603234A TW 200603234 A TW200603234 A TW 200603234A TW 094119519 A TW094119519 A TW 094119519A TW 94119519 A TW94119519 A TW 94119519A TW 200603234 A TW200603234 A TW 200603234A
Authority
TW
Taiwan
Prior art keywords
circuits
thin film
film transistors
indium oxide
transistors
Prior art date
Application number
TW094119519A
Other languages
English (en)
Other versions
TWI288429B (en
Inventor
Yi-Chi Shih
Cindy-Xing Qiu
Chu-Nong Qiu
I-Shiang Shih
Original Assignee
Yi-Chi Shih
Cindy-Xing Qiu
Chu-Nong Qiu
I-Shiang Shih
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yi-Chi Shih, Cindy-Xing Qiu, Chu-Nong Qiu, I-Shiang Shih filed Critical Yi-Chi Shih
Publication of TW200603234A publication Critical patent/TW200603234A/zh
Application granted granted Critical
Publication of TWI288429B publication Critical patent/TWI288429B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/674Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6704Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6729Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733Multi-gate TFTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6729Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733Multi-gate TFTs
    • H10D30/6734Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
TW094119519A 2004-06-14 2005-06-13 Indium oxide-based thin film transistors and circuits TWI288429B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/866,267 US7211825B2 (en) 2004-06-14 2004-06-14 Indium oxide-based thin film transistors and circuits

Publications (2)

Publication Number Publication Date
TW200603234A true TW200603234A (en) 2006-01-16
TWI288429B TWI288429B (en) 2007-10-11

Family

ID=35459639

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094119519A TWI288429B (en) 2004-06-14 2005-06-13 Indium oxide-based thin film transistors and circuits

Country Status (2)

Country Link
US (1) US7211825B2 (zh)
TW (1) TWI288429B (zh)

Cited By (8)

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CN101853884A (zh) * 2009-03-27 2010-10-06 株式会社半导体能源研究所 半导体装置
CN103268876A (zh) * 2012-09-27 2013-08-28 厦门天马微电子有限公司 静电释放保护电路、显示面板和显示装置
TWI456766B (zh) * 2005-12-02 2014-10-11 出光興產股份有限公司 薄膜電晶體基板及薄膜電晶體基板之製造方法
TWI555211B (zh) * 2009-11-28 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9570619B2 (en) 2008-11-21 2017-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10211231B2 (en) 2009-07-03 2019-02-19 Semiconductor Energy Laboratory Co., Ltd. Display device including transistor and manufacturing method thereof
TWI691755B (zh) * 2018-09-07 2020-04-21 中國商京東方科技集團股份有限公司 陣列基板、顯示面板及顯示裝置
TWI787195B (zh) * 2016-09-30 2022-12-21 美商英特爾股份有限公司 在薄膜電晶體的金屬接觸通孔中實施高遷移率低接觸電阻半導體氧化物的系統、方法及設備

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