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TW201816179A - 用於熱校準反應腔室的方法 - Google Patents

用於熱校準反應腔室的方法 Download PDF

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TW201816179A
TW201816179A TW106136905A TW106136905A TW201816179A TW 201816179 A TW201816179 A TW 201816179A TW 106136905 A TW106136905 A TW 106136905A TW 106136905 A TW106136905 A TW 106136905A TW 201816179 A TW201816179 A TW 201816179A
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temperature sensor
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安塞爾莫 金
勞倫 雅各布斯
彼得 韋斯特倫
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荷蘭商Ａｓｍ智慧財產控股公司
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Abstract

用於熱校準反應腔室之方法係被提出。在某些實施例中，方法可包含利用一第一溫度感測器來計算在一第一反應腔室之內的一第一接觸型溫度感測器的一第一校正因數，並且施加該第一校正因數至一第一溫度控制器以提供一第一經校準的接觸型溫度感測器。實施例亦可包含利用該第一經校準的接觸型溫度感測器來計算在該第一反應腔室之內的一第一非接觸型溫度感測器的一第一校準因數，並且施加該第一校準因數至該第一非接觸型溫度感測器以提供一第一經校準的非接觸型溫度感測器。

Description

用於熱校準反應腔室的方法
本揭露內容係大致有關於反應腔室以及用於熱校準反應腔室的方法。
相關申請案的交互參照
此申請案係主張2016年10月26日申請的名稱為"用於熱校準反應腔室的方法"的臨時申請案號62/413,099的益處及優先權，該臨時申請案的內容係在該內容並不與本揭露內容衝突的範圍內藉此被納入作為參考。
高溫的反應腔室可被使用於沉積各種的材料層到半導體基板之上。一例如是矽晶圓的半導體基板可被置放在一反應腔室內的一晶圓支撐件上。該晶圓以及該支撐件都可被加熱到一所要的設定點溫度。在一範例的晶圓處理製程中，反應性氣體可以通過在一被加熱的晶圓之上，其係使得該反應性材料的一薄層化學氣相沉積(CVD)到該晶圓之上。透過後續的沉積、摻雜、微影、蝕刻以及其它的製程，這些層係被做成為積體電路。
各種的製程參數可以仔細地被控制以確保該沉積的層的高品質。一個此種製程參數的一個例子是該晶圓溫度。例如，在CVD期間，該些沉積氣體係在特定的指定溫度範圍內反應，以用於沉積到該晶圓之 上。一在溫度上的改變可能會導致一在沉積速率上的改變以及一非所要的層厚度。於是，在該處理開始之前正確地控制該晶圓溫度以將該晶圓帶至所要的溫度並且在整個製程都維持該所要的溫度是重要的。
被利用於晶圓沉積的標稱相同的CVD工具可能會包括在工具之間的某種變異。例如，被利用在該CVD製程中的反應腔室可能會分別具有一特徵熱環境，其於是可能會在一沉積製程期間影響該晶圓溫度。該些反應腔室可以是由石英材料所製成的，並且被利用在該石英的製造上的製程可能會導致在該石英反應腔室的特點上的變化，例如是臨界尺寸、材料品質、折射性質、等等。此外，在該反應腔室之內以及周圍的構件可能會在位置以及最佳功能上變化，此係增加額外的變異。對於其中多個反應腔室可能執行相同的製程處方，而且預期該製程結果是實質相同的大量製造而言，在該反應腔室內的變化可能是非所要的。例如，對於一CVD製程而言，所產生的沉積的層係被預期具有均勻的厚度、載子遷移率、折射率、應力、等等。
為了克服可能會由於在CVD工具上的變化而發生的問題，以"工具間的匹配(tool-to-tool matching)"著稱的製程可被採用。然而，現有的"工具間的匹配"製程可能是耗時的、成本過高的、而且可能未提供有效的熱校準反應腔室的方法。
此發明內容係被提供以用一種簡化的形式來介紹一些所選的概念。這些概念係更詳細地被描述在以下本揭露內容的範例實施例的詳細說明中。此發明內容並不欲指出所主張的標的之關鍵特點或是重要的特 點，也不欲被用來限制所主張的標的之範疇。
在某些實施例中，用於熱校準反應腔室之方法係被提出。該方法可包括：利用一第一溫度感測器來計算在一第一反應腔室之內的一第一接觸型溫度感測器的一第一校正(correction)因數。該方法亦可包括施加該第一校正因數至一第一溫度控制器以提供一第一經校準的接觸型溫度感測器，並且利用該第一經校準的接觸型溫度感測器來計算在該第一反應腔室之內的一第一非接觸型溫度感測器的一第一校準(calibration)因數。方法可以額外包括施加該第一校準因數至該第一非接觸型溫度類型感測器以提供一第一經校準的非接觸型溫度感測器。方法亦可包括轉移該第一經校準的非接觸型溫度感測器至一第二反應腔室並且利用該第一經校準的非接觸型溫度感測器來計算在該第二反應腔室之內的一第二接觸型溫度感測器的一第二校正因數。該方法亦可包括施加該第二校正因數至一第二溫度控制器，以提供一第二經校準的接觸型溫度感測器。
在額外的實施例中，其它用於熱校準反應腔室之方法係被提出。該方法可包括：藉由比較由在該第一反應腔室之內的一第一熱電偶所感測的一溫度以及由在該第一反應腔室之內的一裝有測量儀表的(instrumented)晶圓所感測的一溫度，來計算及施加一第一校正因數至和一第一反應腔室相關的一第一溫度控制器。方法亦可包括藉由比較由該第一熱電偶所感測的一溫度以及由一第一高溫計所感測的一溫度，來計算及施加一第一校準因數至在該第一反應腔室之內的該第一高溫計。方法可以額外包括轉移該第一高溫計至一第二反應腔室，並且藉由比較由在該第二反應腔室之內的一第二熱電偶所感測的一溫度以及由該第一高溫計所感測的一 溫度，來計算及施加一第二校正因數至和該第二反應腔室相關的一第二溫度控制器。
為了概述本發明以及所達成的優於習知技術的優點之目的，本發明的某些目的及優點已經在此之前加以敘述。當然，所了解的是並不一定所有此種目的或優點都可以根據本發明的任何特定的實施例來加以達成。因此，例如熟習此項技術者將會體認到本發明可以用一種達成或最佳化如同在此教示或建議的一優點或是群組的優點，而不一定達成如同可能在此教示或建議的其它目的或優點的方式來加以體現或實行。
這些實施例的全部係欲落於在此揭露的本發明的範疇內。這些及其它實施例對於熟習此項技術者而言，從以下的某些實施例的參考至所附圖式的詳細說明將會變成是相當明顯的，本發明並未受限於任何所揭露的特定實施例。
1-18‧‧‧熱電偶
100‧‧‧裝有測量儀表的晶圓
110‧‧‧中心熱電偶
200‧‧‧晶圓處理工具
210‧‧‧晶圓
220‧‧‧反應腔室
230‧‧‧晶圓支撐件
240‧‧‧支架
250‧‧‧基座
260‧‧‧軸
270‧‧‧管
280、290‧‧‧加熱元件
292‧‧‧熱電偶
294‧‧‧非接觸型溫度感測器(高溫計)
296‧‧‧溫度控制器
300‧‧‧熱校準反應腔室的方法
310‧‧‧第一製程步驟
320‧‧‧第二製程步驟
330‧‧‧第三製程步驟
340‧‧‧第四製程步驟
350‧‧‧第五製程步驟
360‧‧‧第六製程步驟
370‧‧‧第七製程步驟
410‧‧‧3D厚度的均勻度輪廓
420‧‧‧平面圖的厚度均勻度
430‧‧‧3D厚度的均勻度輪廓
440‧‧‧平面圖的厚度均勻度
儘管說明書是以特別指出而且明白主張被視為本發明的實施例者的申請專利範圍作為總結，但是本揭露內容的實施例的優點可能是從本揭露內容的實施例的某些例子的說明當結合所附的圖式來閱讀時更容易加以確定，其中：圖1是一範例的裝有測量儀表的晶圓的概要示意圖，其係包括一陣列的熱電偶；圖2是一範例的晶圓處理工具的概要示意圖，其係包括一反應腔室；圖3是描繪在一種熱校準一反應腔室之方法中的步驟的流程圖；以及圖4是描繪藉由本揭露內容的實施例所產生的厚度均勻度輪廓。
在此所呈現的圖示並非意謂是任何特定的材料、結構、或是裝置的實際的視圖，而僅僅是被用來描述本揭露內容的實施例之理想化的表示而已。
如同在此所用的，該術語"非接觸型溫度感測器"可以是指一種可以從待被感測的物體遠端地感測溫度的溫度感測器。
如同在此所用的，該術語"接觸型溫度感測器"可以是指一種可以從直接接觸待被感測的物體、或是靠近該物體來感測溫度的溫度感測器。
如同在此所用的，該術語"反應腔室"可以是指一種其中可以進行一熱製程的器皿、腔室或是容器。
本揭露內容係包含可被使用於熱校準反應腔室的方法。反應腔室的熱校準可以容許一實質相同的熱環境能夠被產生在兩個或多個反應腔室之間，此係容許在製程結果上的一對應的均勻度下，橫跨多個反應腔室使用相同的製程處方。例如，多個反應腔室可被利用在一叢集類型的工具中、或是在一大量製造類型的環境中，其中包括多個反應腔室的多個製程工具係執行相同的製程處方。
本揭露內容係包含用於在兩個或多個反應腔室之間的"工具間的匹配"(TTTM)的熱校準方法。在本揭露內容中揭露的TTTM程序可包括一非接觸型溫度感測器(例如在一非限制性的範例實施例中是一高溫計)的校準。此種經校準的非接觸型溫度感測器可以接著被轉移到額外的反應腔室，以用於該些額外的反應腔室的快速且符合成本效益的熱校準。
此項技術中已知用於反應腔室的熱校準的方法可以利用一裝有測量儀表的晶圓，例如是一裝有熱電偶(TC)的晶圓。更詳細地說並且參考圖1，一裝有測量儀表的晶圓100可包括一陣列的經校準的熱電偶已經附接到其中的一晶圓。例如，如同在圖1中所繪的，該裝有測量儀表的晶圓100可包括附接至一晶圓的經校準的熱電偶1-18，其係包含中心熱電偶110。反應腔室的熱校準可能需要該裝有TC的晶圓安裝到反應腔室中，並且接著量測橫跨該晶圓在對應於該些附接熱電偶的位置處的溫度。裝有TC的晶圓可以是有用的，因為篩檢在反應腔室之內的一寬廣的參數空間(溫度、壓力、載子氣體流動、等等)並且最小化在晶圓內的溫度非均勻性是可能的。
然而，利用一裝有TC的晶圓的反應腔室的熱校準因為一些原因而可能是非所要的。就所需的工時以及就所引發的材料成本兩方面而言，安裝該裝有測量儀表的晶圓到兩個或反應腔室可能是昂貴的。一裝有測量儀表的晶圓的利用可能是侵入性的，因為其係在該裝有測量儀表的晶圓的安裝而且亦在該裝有測量儀表的晶圓的移除、以及拆卸/組裝該晶圓製程工具的部分的必要性上，引入一可能的硬體組件誤差的來源。此外，該裝有TC的晶圓的安裝以及後續的移除可能會為了"乾燥時間"而帶來一段介於約12到20小時之間的冗長的期間，亦即從該反應腔室移除污染的濕氣所需的時間期間。因此，所期望的是改善為了"工具間的匹配"目的之反應腔室的熱校準之方法。此種所期望的用於熱校準反應腔室之方法的例子係在以下更詳細地加以揭示。
圖2是一晶圓處理工具的一非限制性的例子的概要示意 圖，其可包括一高溫化學氣相沉積腔室。在圖2的晶圓處理工具200中，一晶圓210可以在一反應腔室220之內，其係被支撐在一晶圓支撐件230之上。該晶圓支撐件230可包含一支架(spider)240，其係支撐可以安置一晶圓210在其之上的一基座250。該支架240可被安裝到一軸260，該軸260可以透過一從該反應腔室220的下方的壁下垂的管270來向下延伸。
該晶圓製程工具200可以配備有一可包括輻射的加熱元件280及290的加熱系統，其可被用來升高該晶圓210至一設定點溫度。該些細長管型的加熱元件280及290的每一個可包括一高強度的鎢絲燈。此種加熱元件280及290係產生輻射的熱能，該輻射的熱能係在無可感知的吸收下，被發送穿透該反應腔室220的壁。該反應腔室220的壁可包括一種透明的材料，例如是石英。如同半導體處理技術中已知的，該些各種的燈280及290的功率可以響應於溫度感測器而被獨立地、或是以分組的區域來加以控制。製程溫度可以是介於約400℃到1200℃之間。
一接觸型的溫度感測器(例如，一熱電偶292)係被展示在該晶圓210之下，其係相當接近該晶圓210，並且可被設置在從該室220的下方的壁下垂的管270內。晶圓溫度亦可以利用一非接觸型溫度感測器294(例如，一光學高溫計)來加以量測，該溫度感測器294係具有一直接的視線至該晶圓210。一溫度控制器296可以是和反應腔室220相關的，以根據藉由該熱電偶292所感測的一溫度以及所要的設定點溫度來控制至該些加熱元件280及290的功率。
在溫度控制系統中，一熱電偶可被稱為一接觸型的感測器，因為其經常可以被置放成接觸其中溫度將被感測的物體。然而，該熱電偶 有時可以被設置成與其中溫度將被感測的物體稍微間隔開。一熱電偶係藉由一相關待量測的物體之導熱的熱傳導來感測溫度。此類型的一感測器可被稱為一接觸型的感測器，但是如同在此所用的該術語可包含被設置成靠近，但是並未實際接觸待被感測的物體的熱電偶。再者，一"接觸型的感測器"可包含一種藉由對流或輻射的傳熱來操作的溫度感測器，即使是其可能並未包括熱電偶。
相對地，一光學高溫計可被稱為一非接觸型溫度感測器，因為其可以是與溫度是所關注的物體間隔的非常開，亦即，該溫度係藉由量測該晶圓所發射的黑體輻射來加以感測。為了此揭露內容的目的，一非接觸型溫度感測器可以不僅包含一高溫計，亦可包含其它可以遠端地感測該溫度的溫度感測器，例如是頻帶邊緣溫度測定法。
本揭露內容的方法可以利用接觸型溫度感測器以及非接觸型溫度感測器兩者來熱校準反應腔室。在本揭露內容的某些實施例中，該些腔室可包括例如是在圖2中被描繪為反應腔室220的反應腔室。
在某些實施例中，本揭露內容的方法可以參考圖3來加以理解，其係包括描繪在一種熱校準反應腔室的方法300中的步驟之流程圖。
方法300的一第一製程步驟310可包括利用一第一溫度感測器來計算在一第一反應腔室之內的一第一接觸型溫度感測器的一第一校正因數。更詳細地說，該第一反應腔室可包括如同在圖2中所繪的一反應腔室220。在某些實施例中，本揭露內容的方法可包括選擇在一第一反應腔室之內的該第一接觸型溫度以包括一熱電偶，例如是圖2的熱電偶292。如同在圖2中所繪的熱電偶292在某些實施例中可被稱為該"中心熱電偶"，因為 該熱電偶292係被設置在晶圓210的中心位置的正下方。
在某些實施例中，該第一接觸型溫度感測器(例如，熱電偶292)可以是和一第一溫度控制器296相關的。該第一溫度控制器296可包括一電路，其可被配置以根據一來自藉由該第一接觸型溫度感測器所感測的溫度的響應，來控制該反應腔室的溫度。該第一溫度控制器係利用藉由該第一接觸型溫度感測器所感測的溫度以調整至加熱元件280及290的功率，以便於提供一所要的溫度至熱電偶292或是晶圓210。在某些實施例中，一用於熱電偶292或晶圓210的所要的溫度可被稱為該"設定點"，並且該第一溫度控制器296可包括一PID控制器，其可被用來根據該設定點，藉由設定該第一溫度控制器296的P(比例)、I(積分)以及D(微分)項，以控制在該第一反應腔室之內的溫度。該第一溫度控制器係藉由利用該第一接觸型溫度感測器的讀數來控制該些加熱元件280及290，以降低在該設定點以及該量測到的溫度之間的溫度梯度。
在某些實施例中，藉由該第一接觸型溫度感測器所感測的溫度可以在被傳送至該第一溫度控制器之前先加以調整。例如，一"第一校正因數"可被採用，以施加一偏移至藉由該第一接觸型溫度感測器所感測的溫度。在某些實施例中，一第一溫度感測器可被採用在計算該第一校正因數中，並且方法可包括選擇該第一溫度感測器以包括一裝有測量儀表的晶圓，例如是一裝有TC的晶圓。作為一非限制性的例子，一例如是圖1的裝有測量儀表的晶圓100之裝有測量儀表的晶圓可被利用。在某些實施例中，該第一溫度感測器(例如，一儀表晶圓)可被設置在如同圖2中所繪的第一反應腔室220之內，其中該晶圓210係包括該裝有測量儀表的晶圓。
在某些實施例中，利用該第一溫度感測器來計算在該第一反應腔室之內的該第一接觸型溫度感測器的該第一校正因數進一步包括比較一藉由該第一接觸型溫度感測器所感測的溫度量測與一藉由該第一溫度感測器所感測的溫度，並且根據該比較來計算該第一校正因數。更詳細地說並且參考圖2，一第一反應腔室220可以利用加熱元件280及290而被加熱至一第一設定點。一旦在該第一反應腔室220之內的溫度已經穩定化在該第一設定點後，藉由該第一接觸型溫度感測器(例如，熱電偶292)所感測的一溫度量測可以相較於藉由該第一溫度感測器(例如，該裝有測量儀表的晶圓210)所感測的溫度。該第一校正因數可以根據該兩個溫度量測的一比較而被計算出，並且在某些實施例中，該第一校正因數可包括在藉由該第一接觸型溫度感測器所感測的一溫度以及藉由該第一溫度感測器所感測的一溫度之間的溫度差值。例如，在某些實施例中，該第一校正因數可被計算為在藉由該第一溫度感測器(例如，來自該裝有測量儀表的晶圓100的中心熱電偶110)所感測的一溫度、以及藉由該第一接觸型溫度感測器(例如，來自該"中心"熱電偶292)所感測的一溫度之間的差值。
在某些實施例中，利用該第一溫度感測器來計算在該第一反應腔室之內的該第一接觸型溫度感測器的該第一校正因數可以被重複一或多次。例如，該反應腔室220可以利用加熱元件280及290而被加熱至一第二設定點，並且一旦在該第一反應腔室220中的溫度已經穩定化在該第二設定點後，該第一校正因數可以針對於該第二設定點，藉由比較由該第一接觸型溫度感測器(例如，熱電偶292)所感測的溫度以及由該第一溫度感測器(例如，該裝有測量儀表的晶圓210)所感測的溫度而被計算出。因此，該 第一校正可以針對於在該第一反應腔室之內的多個設定點溫度而被計算出。
在某些實施例中，比較藉由該第一接觸型溫度感測器所感測的溫度量測與一藉由該第一溫度感測器所感測的溫度量測係同時加以執行。例如，該第一反應腔室220可以利用加熱元件280及290而被加熱至一第一設定點，並且一旦在該第一反應腔室220中的溫度已經穩定化在該第一設定點後，藉由該第一接觸型溫度感測器(例如，該熱電偶292)所感測的溫度以及藉由該第一溫度感測器(例如，該裝有測量儀表的晶圓210)所感測的溫度係同時加以比較，亦即，藉由該第一接觸型溫度感測器所感測的溫度以及藉由該第一溫度感測器所感測的溫度的比較可以在相同的時間期間加以執行。
在某些實施例中，利用一第一溫度感測器來計算在一第一反應腔室之內的一第一接觸型溫度感測器的一第一校正因數可以進一步包括將該第一溫度感測器以及該第一接觸型感測器設置成彼此直接接觸。在其它實施例中，該第一溫度感測器以及該第一接觸型感測器可被設置成彼此接近的。
在某些實施例中，該第一反應腔室可以進一步包括一或多個額外的接觸型溫度感測器。例如，圖2的反應腔室220可包含一或多個額外的熱電偶(未顯示)，其係被設置在該基座250之下而且接近該基座250的各種位置處。該些額外的熱電偶可以利用該第一溫度感測器(例如，該裝有測量儀表的晶圓)來加以校準，藉此控制橫跨該晶圓210的熱均勻度。
方法300的一第二製程步驟320可包括施加該第一校正因數 至一第一溫度控制器，以提供一第一經校準的接觸型溫度感測器。更詳細地說，如同在第一製程步驟310中計算出的第一校正因數可被施加至該第一溫度控制器以作為該第一接觸型溫度感測器的一偏移，藉此提供一第一經校準的接觸型溫度感測器。在某些實施例中，一旦該第一校正因數係被施加至該第一溫度控制器後，藉由該第一接觸型溫度感測器所感測的溫度以及藉由該第一溫度感測器所感測的溫度可以在一所要的設定點溫度下是實質相等的。
方法300的一第三製程步驟330可包括利用該第一經校準的接觸型的溫度感測器來計算在一第一反應腔室之內的一第一非接觸型溫度感測器的一第一校準因數。更詳細地說，該第一反應腔室可包括如同在圖2中所繪的一反應腔室220。在某些實施例中，本揭露內容的方法可包括選擇在一第一反應腔室之內的第一非接觸型溫度感測器以包括一高溫計，例如是圖2的高溫計294。在本揭露內容的某些實施例中，該高溫計294係偵測在一約3.3μm的波長的光，以便於避免收集到從該些加熱元件280及290發射的輻射，並且亦避開藉由該石英室220的吸收，藉此使得該高溫計294能夠在無來自雜訊的實質干擾或是光學損失下收集來自該晶圓210的黑體輻射。
在某些實施例中，藉由該第一非接觸型溫度感測器所感測的溫度可被調整，亦即被校準，以提供在反應腔室220之內的一晶圓210的一更正確的溫度量測。例如，一"第一校準因數"可被採用以施加一偏移至藉由該第一非接觸型溫度感測器所感測的溫度。在某些實施例中，一第一經校準的接觸型溫度感測器可被採用在計算該第一校準因數上。
在某些實施例中，利用該第一經校準的接觸型溫度感測器來計算在該第一反應腔室之內的該第一非接觸型溫度感測器的第一校準因數係進一步包括比較一藉由該第一非接觸型溫度感測器所感測的溫度量測與一藉由該第一經校準的接觸型感測器所感測的溫度，並且根據該比較來計算該第一校準因數。
更詳細地說並且參考圖2，一第一反應腔室220可以利用加熱元件280及290而被加熱至一第一設定點。一旦在該第一反應腔室220之內的溫度已經穩定化在該第一設定點後，一藉由該第一經校準的接觸型溫度感測器(例如，經校準的熱電偶292)所感測的溫度量測可以相較於藉由該第一非接觸溫度感測器(例如，高溫計294)所感測的溫度。該第一校準因數可以根據該兩個溫度量測的一比較而被計算出。
在某些實施例中，利用該第一經校準的接觸型溫度感測器來計算在該第一反應腔室之內的該第一非接觸型溫度感測器的第一校準因數可以被重複一或多次，藉此產生橫跨一範圍的溫度的一校準曲線或是函數。例如，該反應腔室220可以利用加熱元件280及290而被加熱至一第二設定點，並且一旦在該第一反應腔室220中的溫度已經穩定化在該第二設定點後，針對於該第二設定點的第一校準因數可藉由比較藉由該第一經校準的接觸型溫度感測器(例如，經校準的熱電偶292)所感測的溫度以及藉由該第一非接觸型溫度感測器(例如，高溫計294)所感測的溫度而被計算出。因此，該第一校準可以針對於在該反應腔室之內的多個設定點溫度而被計算出。
在某些實施例中，利用該第一經校準的接觸型溫度感測器來 計算在該第一反應腔室之內的該第一非接觸型溫度感測器的第一校準因數可以進一步包括從該第一反應腔室之內移除該第一溫度感測器，並且在該第一反應腔室之內提供一半導體晶圓，其中藉由該第一非接觸型溫度感測器(例如，高溫計294)所感測的溫度係從該半導體晶圓的一表面來加以感測。更詳細地說並且參考圖2，一第一溫度感測器可以從該第一反應腔室220被移除，並且被一半導體晶圓210所取代。該第一非接觸型溫度感測器(例如，高溫計294)可以在該半導體晶圓210的一表面的視線下被設置在該半導體晶圓210之上，使得該第一非接觸型溫度感測器(例如，該高溫計294)可以感測在該半導體晶圓210的表面的溫度。本揭露內容的進一步的實施例可包括選擇該半導體晶圓以包括一晶體半導體晶圓，其係具有類似於該第一溫度感測器(例如，一裝有TC的晶圓)的吸收性質，例如在一非限制性的例子中是一p型摻雜的矽晶圓。
方法300的一第四製程步驟340可包括施加該第一校準因數至該第一非接觸型溫度感測器，以提供一第一經校準的非接觸型溫度感測器。更詳細地說，如同在第三製程步驟330中計算出的第一校準因數可被施加至該第一非接觸型溫度感測器以作為該第一非接觸型溫度感測器的一偏移，藉此提供一第一經校準的非接觸型溫度感測器。在某些實施例中，一旦該第一校準因數被施加至該第一非接觸溫度類型感測器後，藉由該第一經校準的接觸型溫度感測器所感測的溫度以及藉由該第一經校準的非接觸型溫度感測器所感測的溫度可以在一所要的設定點溫度是實質相等的。
方法300的一第五製程步驟350可包括轉移該第一經校準的非接觸型溫度感測器至一第二反應腔室。更詳細地說，該第一經校準的非 接觸型溫度感測器可以從該第一反應腔室被移除，並且被轉移到一第二反應腔室。該第一經校準的非接觸型溫度感測器可被利用在該第二反應腔室的熱校準中，其中該第二反應腔室的熱校準可以在不需要一裝有測量儀表的晶圓下加以執行。在某些實施例中，該第二反應腔室可包括如同在圖2中所繪的反應腔室220。
方法300的一第六製程步驟360可包括利用該第一經校準的非接觸型溫度感測器來計算在一第二反應腔室之內的一第二接觸型溫度感測器的一第二校正因數。更詳細地說，該第二反應腔室可包括如同在圖2中所繪的一反應腔室220。在某些實施例中，本揭露內容的方法可包括選擇在一第二反應腔室之內的該第二接觸型溫度感測器以包括一熱電偶，例如是圖2的熱電偶292。如同在圖2中所繪的熱電偶292在某些實施例中可以再次被稱為該"中心熱電偶"，因為該熱電偶292係被設置在晶圓210的中心位置處。
在某些實施例中，該第二接觸型溫度感測器(例如，熱電偶292)可以是和一第二溫度控制器296相關的。該第二溫度控制器296可包括一電路，其可被配置以根據一來自藉由該第二接觸型溫度感測器所感測的溫度的響應來控制該反應腔室的溫度。該第二溫度控制器係利用藉由該第二接觸型溫度感測器所感測的溫度以調整至加熱元件280及290的功率，以便於提供一所要的溫度至晶圓210。在某些實施例中，該第二溫度控制器296可包括一PID控制器，其可被用來根據該設定點，藉由設定該第二溫度控制器的P、I以及D項來控制在該第二反應腔室之內的溫度。該第二溫度控制器係藉由利用該第二接觸型溫度感測器的讀數來控制該些加熱元件，以 降低在該設定點以及該量測到的溫度之間的溫度梯度。
在某些實施例中，藉由該第二接觸型溫度感測器所感測的溫度可以在被傳送至該第二溫度控制器之前被調整。例如，一"第二校正因數"可被採用以施加一偏移至藉由該第二接觸型溫度感測器所感測的溫度。在某些實施例中，一第一經校準的非接觸型溫度感測器可被採用在計算該第二校正因數上，並且方法可包括選擇該第一經校準的非接觸型溫度感測器以包括一經校準的高溫計。
在某些實施例中，利用該第一經校準的非接觸型溫度感測器來計算在該第二反應腔室之內的該第二接觸型溫度感測器的第二校正因數係進一步包括比較一藉由該第二接觸型溫度感測器所感測的溫度量測與藉由該第一經校準的非接觸型溫度感測器所感測的一溫度，並且根據該比較來計算用於該第二接觸型溫度感測器的該第二校正因數。更詳細地說並且參考圖2，一第二反應腔室220可以利用加熱元件280及290而被加熱至一第一設定點。一旦在該第二反應腔室220之內的溫度已經穩定化在該第一設定點後，一藉由該第二接觸型溫度感測器(例如，熱電偶292)所感測的溫度量測可以相較於藉由該第一經校準的非接觸型溫度感測器(例如，經校準的高溫計294)所感測的溫度。該第二校正因數可以根據該兩個溫度量測的一比較而被計算出，並且在某些實施例中，該第二校正因數可包括在藉由該第二接觸型溫度感測器所感測的一溫度以及藉由該第一經校準的非接觸型溫度感測器所感測的一溫度之間的溫度差值。例如，在某些實施例中，該第二校正因數可被計算為在藉由該第一經校準的非接觸型溫度感測器(例如，從該經校準的高溫計294)所感測的一溫度、以及藉由該第二接觸型溫 度感測器(例如，從該"中心"熱電偶292)所感測的一溫度之間的差值。
在某些實施例中，利用該第一非接觸型溫度感測器來計算在該第二反應腔室之內的該第二接觸型溫度感測器的該第二校正因數可以被重複一或多次。例如，該第二反應腔室220可以利用加熱元件280及290而被加熱至一第二設定點，並且一旦在該第二反應腔室220中的溫度已經穩定化在該第二設定點後，針對於該第二設定點的第二校正因數可藉由比較由該第二接觸型溫度感測器(例如，熱電偶292)所感測的溫度以及由該第一經校準的非接觸型溫度感測器(例如，經校準的高溫計294)所感測的溫度而被計算出。因此，該第二校正因數可以針對於在該第二反應腔室之內的多個設定點溫度而被計算出。
在某些實施例中，比較藉由該第二接觸型溫度感測器所感測的溫度量測與一藉由該第一經校準的非接觸型溫度感測器所感測的溫度量測係同時加以執行。例如，該第二反應腔室220可以利用加熱元件280及290而被加熱至一第一設定點，並且一旦在該第二反應腔室220中的溫度已經穩定化在該第一設定點後，藉由該第二接觸型溫度感測器(例如，熱電偶292)所感測的溫度以及藉由該第一經校準的非接觸型溫度感測器(例如，經校準的高溫計294)所感測的溫度係同時加以比較，亦即，藉由該第二接觸型溫度感測器所感測的溫度以及藉由該第一經校準的非接觸型溫度感測器所感測的溫度的比較可以在相同的時間期間加以執行。
方法300的一第七製程步驟370可包括施加該第二校正因數至一第二溫度控制器，以提供一第二經校準的接觸型溫度感測器。更詳細地說，如同在第六製程步驟360中計算出的第二校正因數可被施加至該第 二溫度控制器以作為一偏移至該第二接觸型溫度感測器，藉此提供一第二經校準的接觸型溫度感測器。在某些實施例中，一旦該第二校正因數被施加至該第二溫度控制器後，藉由該第二經校準的接觸型溫度感測器所感測的溫度以及藉由該第一經校準的非接觸型溫度感測器所感測的溫度對於一所要的設定點溫度而言可以是實質相等的。
在以下的表1係展示針對於多個設定點溫度，利用一裝有測量儀表的晶圓所計算出的第一校正因數以及利用一第一經校準的非接觸型溫度感測器所計算出的第二校正因數。
如同可以從表1看出的，該"差值"是在該第一校正因數以及該第二校正因數之間的差值，並且該"差值"可被視為採用在此揭露的方法來達到反應腔室校準的一手段。如同所繪的，在本揭露內容的某些範例實施例中，在該第一校正因數以及該第二校正因數之間的差值係小於5℃。在本揭露內容的某些範例實施例中，在該第一校正因數以及該第二校正因數之間的差值係小於2℃。在本揭露內容的某些範例實施例中，在該第一校正因 數以及該第二校正因數之間的差值係小於1℃。
在某些實施例中，該第二反應腔室可以進一步包括一或多個額外的接觸型溫度感測器。例如，圖2的反應腔室220可包含一或多個額外的熱電偶(未顯示)，其係被設置在該基座250之下並且接近該基座250的各種位置處。該些額外的熱電偶可以利用一沉積製程來加以校準，藉此避免為了晶圓均勻度調諧以及完全的"工具間的匹配"而需要一裝有測量儀表的晶圓。
在本揭露內容的某些實施例中，一例如是多晶矽的膜的沉積可被利用以決定在其中所述的熱校準方法的特徵。作為一非限制性的範例實施例，一多晶矽層可以利用例如是矽烷(SiH4)而被沉積在反應速率受限的狀態中。此技術可以容許在工具間的晶圓溫度的比較，其係藉由比較在利用相同的製程處方的工具間之生長率以及厚度圖案。再者，由於相對的厚度改變是已知的，因此其可被利用以決定適當的溫度偏移來在一非旋轉的晶圓上獲得均勻的沉積。
作為可採用在此所述的方法所達成的實驗結果的一非限制性的例子，圖4是描繪從一ASM IntrepidTM XP磊晶沉積工具，針對於兩個半導體晶圓所獲得的厚度均勻度輪廓，該兩個半導體晶圓都包括利用相同的製程處方沉積的一層多晶矽。該多晶矽層係利用一降低壓力的(10托耳)、高溫(650℃)非選擇性的SiH4基多晶矽沉積製程，而生長在包括一1kÅ矽氧化物層的摻雜硼的矽晶圓上。繼續參考到圖4，3D厚度的均勻度輪廓410以及平面圖的厚度均勻度420係從在一其中該熱校準係利用一裝有測量儀表的晶圓(例如，一裝有TC的晶圓)加以執行的第一反應腔室中所沉積的一多 晶矽層來加以量測。3D厚度的均勻度輪廓430以及平面圖的厚度均勻度440係從在一其中該熱校準係利用一第一經校準的非接觸型溫度感測器加以執行的第二反應腔室中所沉積的一多晶矽層來加以量測。針對於在該第一反應腔室以及該第二反應腔室中所沉積的兩個多晶矽層的厚度均勻度輪廓的一比較係清楚地展示在該兩個反應腔室之間的厚度均勻度匹配。例如，該第一反應腔室的厚度均勻度輪廓410係展現一1069.37埃的平均的厚度值，而該第二反應腔室的厚度均勻度輪廓430係展現一1117.39埃的平均的厚度值。在該第一反應腔室以及該第二反應腔室中所沉積的兩個多晶矽層之間的平均的厚度值上的差值是48埃，其係對應於在該第一反應以及該第二反應之間的一1.8℃的溫度偏移，該溫度偏移係在知道針對於該製程處方的生長率是27埃/℃/s(在這些生長條件下)而被判斷出。
因此，本揭露內容的用於熱校準反應腔室的實施例可以進一步包括在該第一反應腔室中形成(例如，沉積)一第一膜、以及在該第二反應腔室中利用相同的製程處方來形成(例如，沉積)一第二膜。方法可以進一步包括藉由量測在該第一膜的平均的厚度以及該第二膜的平均的厚度之間的差值並且知道針對於該給定的製程處方的膜生長率，來計算在該第一反應腔室以及該第二反應腔室之間的溫度偏移。在某些實施例中，在該第一反應腔室以及該第二反應腔室之間的溫度偏移可以是小於約5℃。在某些實施例中，在該第一反應腔室以及該第二反應腔室之間的溫度偏移可以是小於約3℃。在某些實施例中，在該第一反應腔室以及該第二反應腔室之間的溫度偏移可以是小於約2℃。
本揭露內容的方法的實施例可包括一進一步的校準製程步 驟。在某些實施例中，用於熱校準反應腔室的方法可以進一步包括利用該第二經校準的接觸型溫度感測器來計算在該第二反應腔室之內的一第二非接觸型溫度感測器的一第二校準因數、以及施加該第二校準因數至該第二非接觸型溫度感測器，以提供一第二經校準的非接觸型溫度感測器。更詳細地說，該第二反應腔室可包括如同在圖2中所繪的一反應腔室220。在某些實施例中，本揭露內容的方法可包括選擇在一第一反應腔室之內的該第二非接觸型溫度感測器以包括一高溫計，例如是圖2的高溫計294。在本揭露內容的某些實施例中，該高溫計294係操作在一約3.3μm的波長以便於避免從該些加熱元件280及290發射的輻射，並且避開藉由該石英室220的吸收，藉此使得該高溫計294能夠收集來自該晶圓210的輻射。
在某些實施例中，藉由該第二非接觸型溫度感測器所感測的溫度可被調整(亦即，被校準)，以提供在反應腔室220之內的一晶圓210的一更正確的溫度量測。例如，一"第二校準因數"可被採用以施加一偏移至藉由該第二非接觸型溫度感測器所感測的溫度。在某些實施例中，一第二經校準的接觸型溫度感測器可被採用在計算該第二校準因數中。
在某些實施例中，利用該第二經校準的接觸型溫度感測器來計算在該第二反應腔室之內的該第二非接觸型溫度感測器的該第二校準因數係進一步包括比較一藉由該第二非接觸型溫度感測器所感測的溫度量測與藉由該第二經校準的接觸型感測器所感測的一溫度，並且根據該比較來計算該第二校準因數。更詳細地說並且參考圖2，一第二反應腔室220可以利用加熱元件280及290而被加熱至一第一設定點。一旦在該第二反應腔室220之內的溫度已經穩定化在該第一設定點後，一藉由該第二經校準的接觸 型溫度感測器(例如，經校準的熱電偶292)所感測的溫度量測可以相較於藉由該第二非接觸溫度感測器(例如，高溫計294)所感測的溫度。該第二校準因數可以根據該兩個溫度量測的一比較而被計算出。
在某些實施例中，利用該第二經校準的接觸型溫度感測器來計算在該第二反應腔室之內的該第二非接觸型溫度感測器的該第二校準因數可以被重複一或多次。例如，該第二反應腔室220可以利用加熱元件280及290而被加熱至一第二設定點，並且一旦在該第二反應腔室220中的溫度已經穩定化在該第二設定點後，針對於該第二設定點的該第二校準因數可以藉由比較由該第二經校準的接觸型溫度感測器(例如，經校準的熱電偶292)所感測的溫度以及由該第二非接觸型溫度感測器(例如，高溫計294)所感測的溫度而被計算出。因此，該第二校準可以針對於在該反應腔室之內的多個設定點溫度而被計算出。
在某些實施例中，利用該第二經校準的接觸型溫度感測器來計算在該第二反應腔室之內的該第二非接觸型溫度感測器的該第二校準因數可以進一步包括從該第二反應腔室移除該第一經校準的非接觸型溫度感測器。在本揭露內容的更進一步的實施例中，該第一經校準的非接觸型溫度感測器可以從該第二反應腔室被移除，並且被轉移到一第三反應腔室。該第一經校準的非接觸型溫度感測器接著可被利用以熱校準該第三反應腔室，而不需要一裝有TC的晶圓。
本揭露內容的實施例亦可包含反應器系統，此種反應器系統係被利用在一或多個反應腔室的熱校準中。此種反應器系統可包括一叢集工具或是多個批次反應器，其係包括多個反應腔室。例如，更詳細地說， 一反應器系統可包括一第一反應腔室以及一第二反應腔室，其中該第一反應腔室以及該第二反應腔室係類似於在圖2中針對於反應腔室220所敘述者。該第一反應腔室可包括和一第一溫度控制器相關的一第一經校準的接觸型溫度感測器，並且該第二反應腔室可包括和一第二溫度控制器相關的一第二經校準的接觸型溫度感測器，此外，該第二反應腔室亦可包括一第一經校準的非接觸型溫度感測器。
在本揭露內容的某些實施例中，該第一反應腔室以及該第二反應腔室可以包括一種石英材料，並且在另一實施例中，該第一反應腔室係與該第二反應腔室實質相同的。
在某些實施例中，該第一經校準的接觸型溫度感測器係包括一第一經校準的熱電偶，並且該第二經校準的接觸型溫度感測器係包括一第二經校準的熱電偶。此外，在某些實施例中，該第一經校準的非接觸型溫度感測器係包括一第一經校準的光學高溫計。
在某些實施例中，在該第一反應腔室以及該第二反應腔室之間的溫度偏移係小於約2℃。此外，在某些實施例中，該第一反應腔室以及該第二反應腔室進一步包括至少一輻射的加熱燈，其係被配置以用於加熱至少一被設置於該第一反應腔室或該第二反應腔室的基板。
上述的本揭露內容的範例實施例並未限制本發明的範疇，因為這些實施例僅僅是本發明的範例實施例而已，本發明係藉由所附的申請專利範圍及其法定的等同物所界定。任何等同的實施例係欲是在本發明的範疇內。確實，除了那些在此展示及敘述的以外，本揭露內容的各種修改，例如是所述的元件之替代的有用的組合，對於熟習此項技術者而言從該說 明可以變成是明顯的。此種修改及實施例亦打算落在所附的申請專利範圍的範疇之內。

Claims (27)

  1. 一種用於熱校準反應腔室之方法，其係包括：利用一第一溫度感測器來計算在一第一反應腔室之內的一第一接觸型溫度感測器的一第一校正因數；施加該第一校正因數至一第一溫度控制器，以提供一第一經校準的接觸型溫度感測器；利用該第一經校準的接觸型溫度感測器來計算在該第一反應腔室之內的一第一非接觸型溫度感測器的一第一校準因數；施加該第一校準因數至該第一非接觸型溫度感測器，以提供一第一經校準的非接觸型溫度感測器；轉移該第一經校準的非接觸型溫度感測器至一第二反應腔室；利用該第一經校準的非接觸型溫度感測器來計算在該第二反應腔室之內的一第二接觸型溫度感測器的一第二校正因數；以及施加該第二校正因數至一第二溫度控制器，以提供一第二經校準的接觸型溫度感測器。
  2. 如申請專利範圍第1項之方法，其中利用該第一溫度感測器來計算在該第一反應腔室之內的該第一接觸型溫度感測器的該第一校正因數係進一步包括：比較一藉由該第一接觸型溫度感測器所感測的溫度量測與一藉由該第一溫度感測器所感測的溫度量測；以及根據該比較來計算該第一校正因數。
  3. 如申請專利範圍第2項之方法，其中，比較一藉由該第一接觸型溫度 感測器所感測的溫度量測與一藉由該第一溫度感測器所感測的溫度量測係同時加以執行。
  4. 如申請專利範圍第1項之方法，其進一步包括選擇該第一溫度感測器以包括一裝有測量儀表的晶圓。
  5. 如申請專利範圍第1項之方法，其進一步包括選擇該第一接觸型溫度感測器以及第二接觸型溫度感測器以包括一熱電偶。
  6. 如申請專利範圍第1項之方法，其進一步包括選擇該第一溫度控制器以及第二溫度控制器以包括一PID控制器。
  7. 如申請專利範圍第1項之方法，其進一步包括選擇該第一非接觸型溫度感測器以及第二非接觸型溫度感測器以包括一高溫計。
  8. 如申請專利範圍第1項之方法，其中計算該第一非接觸型溫度感測器的該第一校準因數係包括：比較一藉由該第一非接觸型溫度感測器所感測的溫度量測與一藉由該第一經校準的接觸型感測器所感測的溫度量測；以及根據該比較來計算該第一校準因數。
  9. 如申請專利範圍第1項之方法，其中計算該第二接觸型溫度感測器的該第二校正因數進一步包括：比較一藉由該第一經校準的非接觸型溫度感測器所感測的溫度量測與一藉由該第二接觸型感測器所感測的溫度量測；以及根據該比較來計算該第二校正因數。
  10. 如申請專利範圍第1項之方法，其中在該第一反應腔室以及該第二反應腔室之間的該溫度偏移係小於2℃。
  11. 如申請專利範圍第1項之方法，其進一步包括：利用該第二接觸型溫度感測器來計算在該第二反應腔室之內的一第二非接觸型溫度感測器的一第二校準因數；以及施加該第二校準因數至該第二非接觸型溫度感測器以提供一第二經校準的非接觸型溫度感測器。
  12. 如申請專利範圍第1項之方法，其進一步包括轉移該第一經校準的非接觸型溫度感測器至一第三反應腔室。
  13. 一種用於熱校準一反應腔室之方法，其係包括：藉由比較由在該第一反應腔室之內的一第一熱電偶所感測的一溫度以及由在該第一反應腔室之內的一裝有測量儀表的晶圓所感測的一溫度，來計算及施加一第一校正因數至和一第一反應腔室相關的一第一溫度控制器；藉由比較由該第一熱電偶所感測的一溫度以及由一第一高溫計所感測的一溫度，來計算及施加一第一校準因數至在該第一反應腔室之內的該第一高溫計；轉移該第一高溫計至一第二反應腔室；以及藉由比較由在該第二反應腔室之內的一第二熱電偶所感測的一溫度以及由該第一高溫計所感測的一溫度，來計算及施加一第二校正因數至和該第二反應腔室相關的一第二溫度控制器。
  14. 如申請專利範圍第13項之方法，其進一步包括藉由比較由該第二熱電偶所感測的一溫度以及藉由該第二高溫計所感測的一溫度，來計算及施加該第二校準因數至一在該第二反應腔室之內的第二高溫計。
  15. 如申請專利範圍第13項之方法，其中比較藉由在該第一反應腔室之內的該第一熱電偶所感測的該溫度與藉由在該第一反應腔室之內的該裝有測量儀表的晶圓所感測的該溫度係同時加以執行。
  16. 如申請專利範圍第13項之方法，其中在該第一反應腔室以及該第二反應腔室之間的該溫度偏移係小於約2℃。
  17. 如申請專利範圍第13項之方法，其中該第一反應腔室以及該第二反應腔室係包括一石英材料。
  18. 如申請專利範圍第13項之方法，其進一步包括轉移該第一高溫計至一第三反應腔室。
  19. 如申請專利範圍第13項之方法，其中在該第一校正因數以及該第二校正因數之間的該差值係小於3℃。
  20. 一種反應器系統，其係包括；一第一反應腔室，其係包括：一第一經校準的接觸型溫度感測器，其係和一第一溫度控制器相關；以及一第二反應腔室，其係包括：一第二經校準的接觸型溫度感測器，其係和一第二溫度控制器相關；以及一第一經校準的非接觸型溫度感測器。
  21. 如申請專利範圍第20項之反應器系統，其中該第一反應腔室以及該第二反應腔室係包括一石英材料。
  22. 如申請專利範圍第20項之反應器系統，其中該第一經校準的接觸型 溫度感測器係包括一第一經校準的熱電偶。
  23. 如申請專利範圍第20項之反應器系統，其中該第二經校準的接觸型溫度感測器係包括一第二經校準的熱電偶。
  24. 如申請專利範圍第20項之反應器系統，其中該第一經校準的非接觸型溫度感測器係包括一第一經校準的光學高溫計。
  25. 如申請專利範圍第20項之反應器系統，其中該第一反應腔室係與該第二反應腔室實質相同的。
  26. 如申請專利範圍第20項之反應器系統，其中在該第一反應腔室以及該第二反應腔室之間的該溫度偏移係小於約2℃。
  27. 如申請專利範圍第20項之反應器系統，其中該第一反應腔室以及該第二反應腔室進一步包括至少一輻射的加熱燈，其係被配置以用於加熱至少一被設置在該第一反應腔室或是該第二反應腔室之內的基板。
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Families Citing this family (378)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
DE102016206447B3 (de) * 2016-04-15 2017-08-10 Sirona Dental Systems Gmbh Verfahren zur Kalibrierung eines Temperaturmessgeräts eines Dentalofens und Kalibrierkörper
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
JP6798017B6 (ja) * 2016-10-17 2021-01-13 エーエスエムエル ネザーランズ ビー．ブイ． 基板にわたってパラメータ変動を修正する処理装置及び方法
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR102762543B1 (ko) 2016-12-14 2025-02-05 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
TWI815813B (zh) 2017-08-04 2023-09-21 荷蘭商Ａｓｍ智慧財產控股公司 用於分配反應腔內氣體的噴頭總成
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7206265B2 (ja) 2017-11-27 2023-01-17 エーエスエム アイピー ホールディング ビー．ブイ． クリーン・ミニエンバイロメントを備える装置
TWI779134B (zh) 2017-11-27 2022-10-01 荷蘭商Ａｓｍ智慧財產控股私人有限公司 用於儲存晶圓匣的儲存裝置及批爐總成
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI852426B (zh) 2018-01-19 2024-08-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沈積方法
WO2019142055A2 (en) 2018-01-19 2019-07-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
WO2019158960A1 (en) 2018-02-14 2019-08-22 Asm Ip Holding B.V. A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR102600229B1 (ko) 2018-04-09 2023-11-10 에이에스엠 아이피 홀딩 비.브이. 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법
TWI843623B (zh) 2018-05-08 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
US12272527B2 (en) 2018-05-09 2025-04-08 Asm Ip Holding B.V. Apparatus for use with hydrogen radicals and method of using same
KR20190129718A (ko) 2018-05-11 2019-11-20 에이에스엠 아이피 홀딩 비.브이. 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 水氣降低的晶圓處置腔室
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
CN112292477A (zh) 2018-06-27 2021-01-29 Asm Ip私人控股有限公司 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构
JP7674105B2 (ja) 2018-06-27 2025-05-09 エーエスエム・アイピー・ホールディング・ベー・フェー 金属含有材料ならびに金属含有材料を含む膜および構造体を形成するための周期的堆積方法
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR102686758B1 (ko) 2018-06-29 2024-07-18 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10732046B2 (en) 2018-09-10 2020-08-04 Asm Ip Holding Bv System and method for thermally calibrating semiconductor process chambers
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344B (zh) 2018-10-01 2024-10-25 Asmip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
KR101931969B1 (ko) 2018-10-15 2018-12-24 안종팔 반도체 웨이퍼 세정장치에서 웨이퍼 표면 온도 측정을 위한 온도센서 설치 위치 조정장치 및 그 방법
DE102018125531A1 (de) * 2018-10-15 2020-04-16 Aixtron Se Vorrichtung und Verfahren zur Regelung der Temperatur in einem CVD-Reaktor
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US12378665B2 (en) 2018-10-26 2025-08-05 Asm Ip Holding B.V. High temperature coatings for a preclean and etch apparatus and related methods
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR102748291B1 (ko) 2018-11-02 2024-12-31 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
KR102792797B1 (ko) * 2018-11-19 2025-04-07 램 리써치 코포레이션 텅스텐을 위한 몰리브덴 템플릿들
US20220018717A1 (en) * 2018-11-21 2022-01-20 Jfe Steel Corporation Calibration method for temperature measurement device, calibration device for temperature measurement device, calibration method for physical quantity measurement device, and calibration device for physical quantity measurement device
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
CN109579898A (zh) * 2018-12-25 2019-04-05 佛山科学技术学院 一种智能制造传感器数据空间校准方法及装置
TWI866480B (zh) 2019-01-17 2024-12-11 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR102727227B1 (ko) 2019-01-22 2024-11-07 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
WO2020159882A1 (en) 2019-01-28 2020-08-06 Lam Research Corporation Deposition of metal films
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
JP7509548B2 (ja) 2019-02-20 2024-07-02 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための周期的堆積方法および装置
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
JP7603377B2 (ja) 2019-02-20 2024-12-20 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR102782593B1 (ko) 2019-03-08 2025-03-14 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR102858005B1 (ko) 2019-03-08 2025-09-09 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR102809999B1 (ko) 2019-04-01 2025-05-19 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR102869364B1 (ko) 2019-05-07 2025-10-10 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP7612342B2 (ja) 2019-05-16 2025-01-14 エーエスエム・アイピー・ホールディング・ベー・フェー ウェハボートハンドリング装置、縦型バッチ炉および方法
JP7598201B2 (ja) 2019-05-16 2024-12-11 エーエスエム・アイピー・ホールディング・ベー・フェー ウェハボートハンドリング装置、縦型バッチ炉および方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
DE102019207663A1 (de) * 2019-05-24 2020-11-26 Ers Electronic Gmbh Kalibrierungsanordnung und entsprechendes Kalibrierungsverfahren
US11543296B2 (en) * 2019-05-31 2023-01-03 Applied Materials, Inc. Method and apparatus for calibration of substrate temperature using pyrometer
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
US12252785B2 (en) 2019-06-10 2025-03-18 Asm Ip Holding B.V. Method for cleaning quartz epitaxial chambers
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR102911421B1 (ko) 2019-07-03 2026-01-12 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
KR102895115B1 (ko) 2019-07-16 2025-12-03 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102860110B1 (ko) 2019-07-17 2025-09-16 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
KR102903090B1 (ko) 2019-07-19 2025-12-19 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
CN112309843B (zh) 2019-07-29 2026-01-23 Asmip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309900B (zh) 2019-07-30 2025-11-04 Asmip私人控股有限公司 基板处理设备
CN112309899B (zh) 2019-07-30 2025-11-14 Asmip私人控股有限公司 基板处理设备
US12169361B2 (en) 2019-07-30 2024-12-17 Asm Ip Holding B.V. Substrate processing apparatus and method
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
CN118422165A (zh) 2019-08-05 2024-08-02 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
CN112342526A (zh) 2019-08-09 2021-02-09 Asm Ip私人控股有限公司 包括冷却装置的加热器组件及其使用方法
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
JP2022547025A (ja) 2019-09-03 2022-11-10 ラム リサーチ コーポレーション モリブデン堆積
KR102868968B1 (ko) 2019-09-03 2025-10-10 에이에스엠 아이피 홀딩 비.브이. 칼코지나이드 막 및 상기 막을 포함한 구조체를 증착하기 위한 방법 및 장치
KR102806450B1 (ko) 2019-09-04 2025-05-12 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR102733104B1 (ko) 2019-09-05 2024-11-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US12469693B2 (en) 2019-09-17 2025-11-11 Asm Ip Holding B.V. Method of forming a carbon-containing layer and structure including the layer
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
TW202128273A (zh) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體注入系統、及將材料沉積於反應室內之基板表面上的方法
KR102879443B1 (ko) 2019-10-10 2025-11-03 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
JP2022551965A (ja) 2019-10-15 2022-12-14 ラム リサーチ コーポレーション モリブデン充填
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR102845724B1 (ko) 2019-10-21 2025-08-13 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR102890638B1 (ko) 2019-11-05 2025-11-25 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR102861314B1 (ko) 2019-11-20 2025-09-17 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
CN112951697B (zh) 2019-11-26 2025-07-29 Asmip私人控股有限公司 基板处理设备
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112885693B (zh) 2019-11-29 2025-06-10 Asmip私人控股有限公司 基板处理设备
CN120998766A (zh) 2019-11-29 2025-11-21 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
TWI901623B (zh) 2020-01-06 2025-10-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體供應總成以及閥板總成
TWI887322B (zh) 2020-01-06 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 反應器系統、抬升銷、及處理方法
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102882467B1 (ko) 2020-01-16 2025-11-05 에이에스엠 아이피 홀딩 비.브이. 고 종횡비 피처를 형성하는 방법
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
USD926942S1 (en) * 2020-01-28 2021-08-03 Universal Flow Monitors, Inc. Flow control plate
TWI889744B (zh) 2020-01-29 2025-07-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 污染物捕集系統、及擋板堆疊
TW202513845A (zh) 2020-02-03 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體裝置結構及其形成方法
KR20210100010A (ko) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. 대형 물품의 투과율 측정을 위한 방법 및 장치
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
CN113257655A (zh) 2020-02-13 2021-08-13 Asm Ip私人控股有限公司 包括光接收装置的基板处理设备和光接收装置的校准方法
KR20210103953A (ko) 2020-02-13 2021-08-24 에이에스엠 아이피 홀딩 비.브이. 가스 분배 어셈블리 및 이를 사용하는 방법
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TWI895326B (zh) 2020-02-28 2025-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 專用於零件清潔的系統
TW202139347A (zh) 2020-03-04 2021-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 反應器系統、對準夾具、及對準方法
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
US12173404B2 (en) 2020-03-17 2024-12-24 Asm Ip Holding B.V. Method of depositing epitaxial material, structure formed using the method, and system for performing the method
KR102755229B1 (ko) 2020-04-02 2025-01-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TWI887376B (zh) 2020-04-03 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體裝置的製造方法
TWI888525B (zh) 2020-04-08 2025-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR102901748B1 (ko) 2020-04-21 2025-12-17 에이에스엠 아이피 홀딩 비.브이. 기판을 처리하기 위한 방법
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
TW202208671A (zh) 2020-04-24 2022-03-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括硼化釩及磷化釩層的結構之方法
KR20210132576A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐 나이트라이드 함유 층을 형성하는 방법 및 이를 포함하는 구조
TWI887400B (zh) 2020-04-24 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於穩定釩化合物之方法及設備
KR102866804B1 (ko) 2020-04-24 2025-09-30 에이에스엠 아이피 홀딩 비.브이. 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
KR102783898B1 (ko) 2020-04-29 2025-03-18 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
JP7726664B2 (ja) 2020-05-04 2025-08-20 エーエスエム・アイピー・ホールディング・ベー・フェー 基板を処理するための基板処理システム
JP7736446B2 (ja) 2020-05-07 2025-09-09 エーエスエム・アイピー・ホールディング・ベー・フェー 同調回路を備える反応器システム
KR102788543B1 (ko) 2020-05-13 2025-03-27 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202146699A (zh) 2020-05-15 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
KR102905441B1 (ko) 2020-05-19 2025-12-30 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145079A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 기판을 처리하기 위한 플랜지 및 장치
KR102795476B1 (ko) 2020-05-21 2025-04-11 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
KR102702526B1 (ko) 2020-05-22 2024-09-03 에이에스엠 아이피 홀딩 비.브이. 과산화수소를 사용하여 박막을 증착하기 위한 장치
TW202212650A (zh) 2020-05-26 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積含硼及鎵的矽鍺層之方法
TWI876048B (zh) 2020-05-29 2025-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
KR20210156219A (ko) 2020-06-16 2021-12-24 에이에스엠 아이피 홀딩 비.브이. 붕소를 함유한 실리콘 게르마늄 층을 증착하는 방법
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TWI896694B (zh) 2020-07-01 2025-09-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積方法、半導體結構、及沉積系統
TW202202649A (zh) 2020-07-08 2022-01-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR20220010438A (ko) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. 포토리소그래피에 사용하기 위한 구조체 및 방법
TWI878570B (zh) 2020-07-20 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
KR20220011092A (ko) 2020-07-20 2022-01-27 에이에스엠 아이피 홀딩 비.브이. 전이 금속층을 포함하는 구조체를 형성하기 위한 방법 및 시스템
US12322591B2 (en) 2020-07-27 2025-06-03 Asm Ip Holding B.V. Thin film deposition process
KR20220020210A (ko) 2020-08-11 2022-02-18 에이에스엠 아이피 홀딩 비.브이. 기판 상에 티타늄 알루미늄 카바이드 막 구조체 및 관련 반도체 구조체를 증착하는 방법
TWI893183B (zh) 2020-08-14 2025-08-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理方法
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
KR20220026500A (ko) 2020-08-25 2022-03-04 에이에스엠 아이피 홀딩 비.브이. 표면을 세정하는 방법
KR102855073B1 (ko) 2020-08-26 2025-09-03 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
KR20220027772A (ko) 2020-08-27 2022-03-08 에이에스엠 아이피 홀딩 비.브이. 다중 패터닝 공정을 사용하여 패터닝된 구조체를 형성하기 위한 방법 및 시스템
KR20220033997A (ko) 2020-09-10 2022-03-17 에이에스엠 아이피 홀딩 비.브이. 갭 충진 유체를 증착하기 위한 방법 그리고 이와 관련된 시스템 및 장치
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
US11359972B2 (en) 2020-09-15 2022-06-14 Applied Materials, Inc. Temperature calibration with band gap absorption method
KR20220036866A (ko) 2020-09-16 2022-03-23 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물 증착 방법
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TWI889903B (zh) 2020-09-25 2025-07-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
KR102873665B1 (ko) 2020-10-15 2025-10-17 에이에스엠 아이피 홀딩 비.브이. 반도체 소자의 제조 방법, 및 ether-cat을 사용하는 기판 처리 장치
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202229620A (zh) 2020-11-12 2022-08-01 特文特大學 沉積系統、用於控制反應條件之方法、沉積方法
TW202229795A (zh) 2020-11-23 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具注入器之基板處理設備
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充間隙之方法與相關之系統及裝置
KR20220076343A (ko) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
US12255053B2 (en) 2020-12-10 2025-03-18 Asm Ip Holding B.V. Methods and systems for depositing a layer
TW202233884A (zh) 2020-12-14 2022-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成臨限電壓控制用之結構的方法
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202232639A (zh) 2020-12-18 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具有可旋轉台的晶圓處理設備
TW202226899A (zh) 2020-12-22 2022-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具匹配器的電漿處理裝置
TW202242184A (zh) 2020-12-22 2022-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 前驅物膠囊、前驅物容器、氣相沉積總成、及將固態前驅物裝載至前驅物容器中之方法
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
TW202301413A (zh) 2021-03-22 2023-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 處理基材之設備
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
CN113483919B (zh) * 2021-06-30 2024-06-11 启北公司 一种温度校准方法、系统、存储介质和电子设备
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
USD1099184S1 (en) 2021-11-29 2025-10-21 Asm Ip Holding B.V. Weighted lift pin
USD1060598S1 (en) 2021-12-03 2025-02-04 Asm Ip Holding B.V. Split showerhead cover
US11948818B2 (en) * 2021-12-09 2024-04-02 Applied Materials, Inc. Temperature calibration with deposition and etch process
US12403467B2 (en) 2021-12-23 2025-09-02 Illumina, Inc. Systems and related temperature calibration methods
CN114808143B (zh) * 2022-06-28 2022-09-02 江苏邑文微电子科技有限公司 晶圆加热设备的参数确定模型训练方法、加热方法和装置
CN116832245A (zh) * 2023-07-19 2023-10-03 宁波未来清源医疗科技有限公司 一种透析液温度控制系统及方法

Family Cites Families (3763)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3089507A (en) 1963-05-14 Air eject system control valve
US2059480A (en) 1933-09-20 1936-11-03 John A Obermaier Thermocouple
US2161626A (en) 1937-09-25 1939-06-06 Walworth Patents Inc Locking device
US2266416A (en) 1939-01-14 1941-12-16 Western Electric Co Control apparatus
US2280778A (en) 1939-09-29 1942-04-28 John C Andersen Garden tool
US2410420A (en) 1944-01-01 1946-11-05 Robert B Bennett Scraper
US2563931A (en) 1946-04-02 1951-08-14 Honeywell Regulator Co Rate responsive thermocouple
US2660061A (en) 1949-03-05 1953-11-24 Dominion Eng Works Ltd Immersion type thermocouple temperature measuring device
US2745640A (en) 1953-09-24 1956-05-15 American Viscose Corp Heat exchanging apparatus
GB752277A (en) 1953-10-28 1956-07-11 Canadian Ind 1954 Ltd Improved thermocouple unit
US3094396A (en) 1959-07-07 1963-06-18 Continental Can Co Method of and apparatus for curing internal coatings on can bodies
US2990045A (en) 1959-09-18 1961-06-27 Lipe Rollway Corp Thermally responsive transmission for automobile fan
US6482262B1 (en) 1959-10-10 2002-11-19 Asm Microchemistry Oy Deposition of transition metal carbides
US3038951A (en) 1961-01-19 1962-06-12 Leeds & Northrup Co Fast acting totally expendable immersion thermocouple
US3232437A (en) 1963-03-13 1966-02-01 Champlon Lab Inc Spin-on filter cartridge
US3410349A (en) 1964-01-02 1968-11-12 Ted R. Troutman Tubing scraper and method
US3263502A (en) 1964-01-21 1966-08-02 Redwood L Springfield Multiple thermocouple support
FR1408266A (fr) 1964-06-30 1965-08-13 Realisations Electr Et Electro Prise de raccordement pour thermocouples
US3332286A (en) 1965-09-02 1967-07-25 Gen Electric Thermocouple pressure gauge
NL6706680A (zh) 1966-06-02 1967-12-04
US3588192A (en) 1969-06-02 1971-06-28 Trw Inc Hydraulic skid control system
US3647387A (en) 1970-03-19 1972-03-07 Stanford Research Inst Detection device
US3647716A (en) 1970-04-03 1972-03-07 Westvaco Corp Transport reactor with a venturi tube connection to a combustion chamber for producing activated carbon
US4393013A (en) 1970-05-20 1983-07-12 J. C. Schumacher Company Vapor mass flow control system
US3713899A (en) 1970-11-12 1973-01-30 Ford Motor Co Thermocouple probe
US3885504A (en) 1971-01-09 1975-05-27 Max Baermann Magnetic stabilizing or suspension system
US3718429A (en) 1971-03-15 1973-02-27 Du Pont No-no2 analyzer
CA1002299A (en) 1971-06-24 1976-12-28 William H. Trembley Installation tool
US3833492A (en) 1971-09-22 1974-09-03 Pollution Control Ind Inc Method of producing ozone
US3796182A (en) 1971-12-16 1974-03-12 Applied Materials Tech Susceptor structure for chemical vapor deposition reactor
US3862397A (en) 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
FR2181175A5 (zh) 1972-04-20 1973-11-30 Commissariat Energie Atomique
JPS5132766B2 (zh) 1972-07-25 1976-09-14
JPS5539903B2 (zh) 1972-10-19 1980-10-14
DE7242602U (zh) 1972-11-20 1976-04-29 Hoogovens Ijmuiden B.V., Ijmuiden (Niederlande)
DE2427992A1 (de) 1973-06-13 1975-03-13 Thermal Syndicate Ltd Verfahren zum messen hoher temperaturen mit thermoelementen
US3854443A (en) 1973-12-19 1974-12-17 Intel Corp Gas reactor for depositing thin films
DE2407133B2 (de) 1974-02-15 1976-12-09 Deutsche Forschungs- und Versuchsanstalt für Luft- und Raumfahrt e.V., 5300 Bonn Verfahren und vorrichtung zur bestimmung von stickoxid
US3904371A (en) 1974-03-04 1975-09-09 Beckman Instruments Inc Chemiluminescent ammonia detection
SU494614A1 (ru) 1974-05-05 1975-12-05 Специальное Проектно-Конструкторское Бюро "Главнефтеснабсбыта" Усср Устройство дистанционного измерени уровн жидкости
US3997638A (en) 1974-09-18 1976-12-14 Celanese Corporation Production of metal ion containing carbon fibers useful in electron shielding applications
US3887790A (en) 1974-10-07 1975-06-03 Vernon H Ferguson Wrap-around electric resistance heater
SE393967B (sv) 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US4054071A (en) 1975-06-17 1977-10-18 Aetna-Standard Engineering Company Flying saw with movable work shifter
DE2610556C2 (de) 1976-03-12 1978-02-02 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Verteilen strömender Medien über einen Strömungsquerschnitt
US4048110A (en) 1976-05-12 1977-09-13 Celanese Corporation Rhenium catalyst composition
USD249341S (en) 1976-11-11 1978-09-12 Umc Industries, Inc. Electro-mechanical pulser
US4194536A (en) 1976-12-09 1980-03-25 Eaton Corporation Composite tubing product
US4181330A (en) 1977-03-22 1980-01-01 Noriatsu Kojima Horn shaped multi-inlet pipe fitting
US4164959A (en) 1977-04-15 1979-08-21 The Salk Institute For Biological Studies Metering valve
US4176630A (en) 1977-06-01 1979-12-04 Dynair Limited Automatic control valves
US4126027A (en) 1977-06-03 1978-11-21 Westinghouse Electric Corp. Method and apparatus for eccentricity correction in a rolling mill
US4152760A (en) 1977-09-16 1979-05-01 The Foxboro Company Industrial process control system
US4145699A (en) 1977-12-07 1979-03-20 Bell Telephone Laboratories, Incorporated Superconducting junctions utilizing a binary semiconductor barrier
US4217463A (en) 1978-03-13 1980-08-12 National Distillers And Chemical Corporation Fast responsive, high pressure thermocouple
US4229064A (en) 1978-10-25 1980-10-21 Trw Inc. Polarizing adapter sleeves for electrical connectors
US4234449A (en) 1979-05-30 1980-11-18 The United States Of America As Represented By The United States Department Of Energy Method of handling radioactive alkali metal waste
US4389973A (en) 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
US4322592A (en) 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
US4355912A (en) 1980-09-12 1982-10-26 Haak Raymond L Spring loaded sensor fitting
US4479831A (en) 1980-09-15 1984-10-30 Burroughs Corporation Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment
US4333735A (en) 1981-03-16 1982-06-08 Exxon Research & Engineering Co. Process and apparatus for measuring gaseous fixed nitrogen species
US4466766A (en) 1981-05-20 1984-08-21 Ruska Instrument Corporation Transfer apparatus
USD269850S (en) 1981-07-22 1983-07-26 Drag Specialties, Inc. Handlebar grip
JPS5819462A (ja) 1981-07-24 1983-02-04 Kawasaki Steel Corp 電縫溶接鋼管
US4436674A (en) 1981-07-30 1984-03-13 J.C. Schumacher Co. Vapor mass flow control system
JPS58107339A (ja) 1981-12-19 1983-06-27 Takanobu Yamamoto レ−ザ−ビ−ムによる印判彫刻方法
US4414492A (en) 1982-02-02 1983-11-08 Intent Patent A.G. Electronic ballast system
US4484061A (en) 1982-05-13 1984-11-20 Sys-Tec, Inc. Temperature control system for liquid chromatographic columns employing a thin film heater/sensor
FR2529714A1 (fr) 1982-07-01 1984-01-06 Commissariat Energie Atomique Procede de realisation de l'oxyde de champ d'un circuit integre
US4401507A (en) 1982-07-14 1983-08-30 Advanced Semiconductor Materials/Am. Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions
FR2532783A1 (fr) 1982-09-07 1984-03-09 Vu Duy Phach Machine de traitement thermique pour semiconducteurs
US4454370A (en) 1982-09-07 1984-06-12 Wahl Instruments, Inc. Thermocouple surface probe
US4444990A (en) 1982-09-08 1984-04-24 Servo Corporation Of America Heat sensing device
JPS5945900U (ja) 1982-09-17 1984-03-27 住友電気工業株式会社 高周波誘導プラズマ用ト−チ
US4512113A (en) 1982-09-23 1985-04-23 Budinger William D Workpiece holder for polishing operation
US4499354A (en) 1982-10-06 1985-02-12 General Instrument Corp. Susceptor for radiant absorption heater system
US4570328A (en) 1983-03-07 1986-02-18 Motorola, Inc. Method of producing titanium nitride MOS device gate electrode
JPS59211779A (ja) 1983-05-14 1984-11-30 Toshiba Corp 圧縮機
US4537001A (en) 1983-05-23 1985-08-27 Uppstroem Leif R Building elements
US4548688A (en) 1983-05-23 1985-10-22 Fusion Semiconductor Systems Hardening of photoresist
USD274122S (en) 1983-06-20 1984-06-05 Drag Specialties, Inc. Motorcycle handlebar grip
JPS6050923A (ja) 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
US4579080A (en) 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
JPS60135990U (ja) 1984-02-20 1985-09-10 株式会社富士通ゼネラル 電子式キヤツシユレジスタ
US4735259A (en) 1984-02-21 1988-04-05 Hewlett-Packard Company Heated transfer line for capillary tubing
USD288556S (en) 1984-02-21 1987-03-03 Pace, Incorporated Ornamental design for a frame of circuit elements utilized to replace damaged elements on printed circuit boards
US5259881A (en) 1991-05-17 1993-11-09 Materials Research Corporation Wafer processing cluster tool batch preheating and degassing apparatus
US4527005A (en) 1984-03-13 1985-07-02 The United States Of America As Represented By The United States Department Of Energy Spring loaded thermocouple module
US4512841A (en) 1984-04-02 1985-04-23 International Business Machines Corporation RF Coupling techniques
US4724272A (en) 1984-04-17 1988-02-09 Rockwell International Corporation Method of controlling pyrolysis temperature
US4575636A (en) 1984-04-30 1986-03-11 Rca Corporation Deep ultraviolet (DUV) flood exposure system
US4611966A (en) 1984-05-30 1986-09-16 Johnson Lester R Apparatus for transferring semiconductor wafers
US4590326A (en) 1984-06-14 1986-05-20 Texaco Inc. Multi-element thermocouple
US4858557A (en) 1984-07-19 1989-08-22 L.P.E. Spa Epitaxial reactors
JPS6138863A (ja) 1984-07-30 1986-02-24 Toshiba Corp 研磨装置
US4579378A (en) 1984-10-31 1986-04-01 Snyders Robert V Mortar joint pointing guide
JPH0752718B2 (ja) 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
JPH0236276Y2 (zh) 1985-01-10 1990-10-03
US4620998A (en) 1985-02-05 1986-11-04 Haresh Lalvani Crescent-shaped polygonal tiles
US4653541A (en) 1985-06-26 1987-03-31 Parker Hannifin Corporation Dual wall safety tube
US4789294A (en) 1985-08-30 1988-12-06 Canon Kabushiki Kaisha Wafer handling apparatus and method
US4664769A (en) 1985-10-28 1987-05-12 International Business Machines Corporation Photoelectric enhanced plasma glow discharge system and method including radiation means
JPH0651909B2 (ja) 1985-12-28 1994-07-06 キヤノン株式会社 薄膜多層構造の形成方法
KR940000915B1 (ko) 1986-01-31 1994-02-04 가부시기가이샤 히다찌세이사꾸쇼 표면 처리방법
US4654226A (en) 1986-03-03 1987-03-31 The University Of Delaware Apparatus and method for photochemical vapor deposition
JPS62237236A (ja) 1986-04-09 1987-10-17 Hitachi Ltd 恒温清浄作業室
US4722298A (en) 1986-05-19 1988-02-02 Machine Technology, Inc. Modular processing apparatus for processing semiconductor wafers
USD309702S (en) 1986-06-25 1990-08-07 Don Hall Safety clamp attachment for a hammer
US4718637A (en) 1986-07-02 1988-01-12 Mdc Vacuum Products Corporation High vacuum gate valve having improved metal vacuum joint
US4681134A (en) 1986-07-23 1987-07-21 Paris Sr Raymond L Valve lock
US5183511A (en) 1986-07-23 1993-02-02 Semiconductor Energy Laboratory Co., Ltd. Photo CVD apparatus with a glow discharge system
US4812201A (en) 1986-07-25 1989-03-14 Tokyo Electron Limited Method of ashing layers, and apparatus for ashing layers
US4749416A (en) 1986-08-01 1988-06-07 System Planning Corporation Immersion pyrometer with protective structure for sidewall use
US4721533A (en) 1986-08-01 1988-01-26 System Planning Corporation Protective structure for an immersion pyrometer
US4882199A (en) 1986-08-15 1989-11-21 Massachusetts Institute Of Technology Method of forming a metal coating on a substrate
DE3635216A1 (de) 1986-10-16 1988-04-21 Draegerwerk Ag Elektrisch ansteuerbares ventil
US5882165A (en) 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
USD311126S (en) 1986-12-23 1990-10-09 Joseph Crowley Shelf extending mounting bracket for additional product display
US4753856A (en) 1987-01-02 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from silicate esters and metal oxides
SU1408319A1 (ru) 1987-01-06 1988-07-07 Всесоюзный научно-исследовательский институт аналитического приборостроения Хемилюминесцентный газоанализатор окислов азота
US4753192A (en) 1987-01-08 1988-06-28 Btu Engineering Corporation Movable core fast cool-down furnace
US4976996A (en) 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
US5198034A (en) 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US4821674A (en) 1987-03-31 1989-04-18 Deboer Wiebe B Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US4790258A (en) 1987-04-03 1988-12-13 Tegal Corporation Magnetically coupled wafer lift pins
US4780169A (en) 1987-05-11 1988-10-25 Tegal Corporation Non-uniform gas inlet for dry etching apparatus
US4827430A (en) 1987-05-11 1989-05-02 Baxter International Inc. Flow measurement system
US4871523A (en) 1987-05-15 1989-10-03 Exxon Chemical Patents Inc. Vanadium tetrachloride stabilization
US4808387A (en) 1987-05-15 1989-02-28 Exxon Chemical Patents Inc. Stabilization of vanadium tetrachloride
US5221556A (en) 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
US4828224A (en) 1987-10-15 1989-05-09 Epsilon Technology, Inc. Chemical vapor deposition system
NO161941C (no) 1987-06-25 1991-04-30 Kvaerner Eng Fremgangsmaate ved og anlegg for transport av hydrokarboner over lang avstand fra en hydrokarbonkilde til havs.
US4837113A (en) 1987-07-16 1989-06-06 Texas Instruments Incorporated Method for depositing compound from group II-VI
US5062386A (en) 1987-07-27 1991-11-05 Epitaxy Systems, Inc. Induction heated pancake epitaxial reactor
USD327534S (en) 1987-07-30 1992-06-30 CLM Investments, Inc. Floor drain strainer
US4854263B1 (en) 1987-08-14 1997-06-17 Applied Materials Inc Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
JPH0777211B2 (ja) 1987-08-19 1995-08-16 富士通株式会社 アッシング方法
US4756794A (en) 1987-08-31 1988-07-12 The United States Of America As Represented By The Secretary Of The Navy Atomic layer etching
KR970004947B1 (ko) 1987-09-10 1997-04-10 도오교오 에레구토론 가부시끼가이샤 핸들링장치
US4854266A (en) 1987-11-02 1989-08-08 Btu Engineering Corporation Cross-flow diffusion furnace
US4916091A (en) 1987-11-05 1990-04-10 Texas Instruments Incorporated Plasma and plasma UV deposition of SiO2
JPH0648217B2 (ja) 1987-12-24 1994-06-22 川惣電機工業株式会社 溶融金属の連続測温装置
US4830515A (en) 1987-12-28 1989-05-16 Omega Engineering, Inc. Mounting clip for a thermocouple assembly
US5028366A (en) 1988-01-12 1991-07-02 Air Products And Chemicals, Inc. Water based mold release compositions for making molded polyurethane foam
FR2628985B1 (fr) 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a paroi protegee contre les depots
US5069591A (en) 1988-03-24 1991-12-03 Tel Sagami Limited Semiconductor wafer-processing apparatus
US4978567A (en) 1988-03-31 1990-12-18 Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same
JP2859632B2 (ja) 1988-04-14 1999-02-17 キヤノン株式会社 成膜装置及び成膜方法
US4857382A (en) 1988-04-26 1989-08-15 General Electric Company Apparatus and method for photoetching of polyimides, polycarbonates and polyetherimides
US4949848A (en) 1988-04-29 1990-08-21 Fluoroware, Inc. Wafer carrier
JPH01296613A (ja) 1988-05-25 1989-11-30 Nec Corp ３−ｖ族化合物半導体の気相成長方法
JPH01307229A (ja) 1988-06-06 1989-12-12 Canon Inc 堆積膜形成法
US5178682A (en) 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor
US5064337A (en) 1988-07-19 1991-11-12 Tokyo Electron Limited Handling apparatus for transferring carriers and a method of transferring carriers
IT1227708B (it) 1988-07-29 1991-05-06 Pomini Farrel Spa Dispositivo di rilevamento della temperatura del materiale contenuto entro un apparecchio chiuso.
US4986215A (en) 1988-09-01 1991-01-22 Kyushu Electronic Metal Co., Ltd. Susceptor for vapor-phase growth system
US5158128A (en) 1988-09-01 1992-10-27 Sumitec, Inc. Thermocouple for a continuous casting machine
JPH0293071A (ja) 1988-09-29 1990-04-03 Toshiba Corp 薄膜の形成方法
JP2918892B2 (ja) 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
US5107170A (en) 1988-10-18 1992-04-21 Nissin Electric Co., Ltd. Ion source having auxillary ion chamber
US4837185A (en) 1988-10-26 1989-06-06 Intel Corporation Pulsed dual radio frequency CVD process
DE3836696C1 (en) 1988-10-28 1989-12-07 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Lock for transporting material between clean rooms
US5119760A (en) 1988-12-27 1992-06-09 Symetrix Corporation Methods and apparatus for material deposition
US5084126A (en) 1988-12-29 1992-01-28 Texas Instruments Incorporated Method and apparatus for uniform flow distribution in plasma reactors
USD320148S (en) 1988-12-30 1991-09-24 Andrews Edward A Drill socket
JPH02185038A (ja) 1989-01-11 1990-07-19 Nec Corp 熱処理装置
JPH0834187B2 (ja) 1989-01-13 1996-03-29 東芝セラミックス株式会社 サセプタ
US5160545A (en) 1989-02-03 1992-11-03 Applied Materials, Inc. Method and apparatus for epitaxial deposition
EP0382984A1 (en) 1989-02-13 1990-08-22 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Thermal decomposition trap
US5053247A (en) 1989-02-28 1991-10-01 Moore Epitaxial, Inc. Method for increasing the batch size of a barrel epitaxial reactor and reactor produced thereby
US5088444A (en) 1989-03-15 1992-02-18 Kabushiki Kaisha Toshiba Vapor deposition system
US4934831A (en) 1989-03-20 1990-06-19 Claud S. Gordon Company Temperature sensing device
EP0422243B1 (en) 1989-03-31 1994-09-21 Canon Kabushiki Kaisha Method of forming polycrystalline film by chemical vapor deposition
US5194401A (en) 1989-04-18 1993-03-16 Applied Materials, Inc. Thermally processing semiconductor wafers at non-ambient pressures
EP0395358B1 (en) 1989-04-25 2001-03-14 Matsushita Electronics Corporation Manufacturing method of a bipolar transistor
US5192717A (en) 1989-04-28 1993-03-09 Canon Kabushiki Kaisha Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method
US5360269A (en) 1989-05-10 1994-11-01 Tokyo Kogyo Kabushiki Kaisha Immersion-type temperature measuring apparatus using thermocouple
US4987856A (en) 1989-05-22 1991-01-29 Advanced Semiconductor Materials America, Inc. High throughput multi station processor for multiple single wafers
US5313061A (en) 1989-06-06 1994-05-17 Viking Instrument Miniaturized mass spectrometer system
US5061083A (en) 1989-06-19 1991-10-29 The United States Of America As Represented By The Department Of Energy Temperature monitoring device and thermocouple assembly therefor
JP2890494B2 (ja) 1989-07-11 1999-05-17 セイコーエプソン株式会社 プラズマ薄膜の製造方法
US5060322A (en) 1989-07-27 1991-10-29 Delepine Jean C Shower room and ceiling element, especially for a shower room
US5013691A (en) 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
US5213650A (en) 1989-08-25 1993-05-25 Applied Materials, Inc. Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer
FI83176C (fi) 1989-09-12 1991-06-10 Aitec Oy Foerfarande foer styrning av roerelser hos en robot och en styckemanipulator under en robotcells inlaerningsskede.
US5057436A (en) 1989-10-02 1991-10-15 Agmaster, Inc. Method and apparatus for detecting toxic gases
US5098865A (en) 1989-11-02 1992-03-24 Machado Jose R High step coverage silicon oxide thin films
JPH03155625A (ja) 1989-11-14 1991-07-03 Seiko Epson Corp プラズマｃｖｄ膜の製造方法
WO1991007643A1 (fr) 1989-11-22 1991-05-30 Nippon Steel Corporation Capteur de temperature du type a thermocouple et procede de mesure de la temperature de l'acier en fusion
US5002632A (en) 1989-11-22 1991-03-26 Texas Instruments Incorporated Method and apparatus for etching semiconductor materials
US4987102A (en) 1989-12-04 1991-01-22 Motorola, Inc. Process for forming high purity thin films
JP2723324B2 (ja) 1990-01-25 1998-03-09 日本特殊陶業株式会社 アルミナ焼結基板
USD330900S (en) 1990-02-08 1992-11-10 Wakegijig William M Drill adapter
JP2936623B2 (ja) 1990-02-26 1999-08-23 日本電気株式会社 半導体装置の製造方法
LU87693A1 (fr) 1990-03-07 1991-10-08 Wurth Paul Sa Sonde de prise d'echantillons gazeux et de mesures thermiques dans un four a cuve
JPH03257182A (ja) 1990-03-07 1991-11-15 Hitachi Ltd 表面加工装置
DE69126724T2 (de) 1990-03-19 1998-01-15 Toshiba Kawasaki Kk Vorrichtung zur Dampfphasenabscheidung
JPH03277774A (ja) 1990-03-27 1991-12-09 Semiconductor Energy Lab Co Ltd 光気相反応装置
DE4011933C2 (de) 1990-04-12 1996-11-21 Balzers Hochvakuum Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür
US5243202A (en) 1990-04-25 1993-09-07 Casio Computer Co., Ltd. Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type
US5328810A (en) 1990-05-07 1994-07-12 Micron Technology, Inc. Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process
US5356672A (en) 1990-05-09 1994-10-18 Jet Process Corporation Method for microwave plasma assisted supersonic gas jet deposition of thin films
CA2016970A1 (en) 1990-05-16 1991-11-16 Prasad N. Gadgil Inverted diffusion stagnation point flow reactor for vapor deposition of thin films
JPH0429313A (ja) 1990-05-24 1992-01-31 Fujitsu Ltd 半導体結晶の製造装置
US5130003A (en) 1990-06-14 1992-07-14 Conrad Richard H method of powering corona discharge in ozone generators
US5225366A (en) 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
JPH0464025A (ja) 1990-07-02 1992-02-28 Matsushita Electric Ind Co Ltd 調理器用温度センサー
DE69127609T2 (de) 1990-07-18 1998-01-22 Sumitomo Electric Industries Vorrichtung und verfahren zur herstellung von diamanten
KR0176715B1 (ko) 1990-07-30 1999-04-15 오가 노리오 드라이에칭방법
US5082517A (en) 1990-08-23 1992-01-21 Texas Instruments Incorporated Plasma density controller for semiconductor device processing equipment
JPH04115531A (ja) 1990-09-05 1992-04-16 Mitsubishi Electric Corp 化学気相成長装置
US5273609A (en) 1990-09-12 1993-12-28 Texas Instruments Incorporated Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment
US5167716A (en) 1990-09-28 1992-12-01 Gasonics, Inc. Method and apparatus for batch processing a semiconductor wafer
JP2780866B2 (ja) 1990-10-11 1998-07-30 大日本スクリーン製造 株式会社 光照射加熱基板の温度測定装置
TW214599B (zh) 1990-10-15 1993-10-11 Seiko Epson Corp
JP2714247B2 (ja) 1990-10-29 1998-02-16 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する方法及び装置
US5228114A (en) 1990-10-30 1993-07-13 Tokyo Electron Sagami Limited Heat-treating apparatus with batch scheme having improved heat controlling capability
US5071258A (en) 1991-02-01 1991-12-10 Vesuvius Crucible Company Thermocouple assembly
JPH05136218A (ja) 1991-02-19 1993-06-01 Tokyo Electron Yamanashi Kk 検査装置
JP2740050B2 (ja) 1991-03-19 1998-04-15 株式会社東芝 溝埋込み配線形成方法
JP3323530B2 (ja) 1991-04-04 2002-09-09 株式会社日立製作所 半導体装置の製造方法
US5116018A (en) 1991-04-12 1992-05-26 Automax, Inc. Lockout modules
US5243195A (en) 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
US5104514A (en) 1991-05-16 1992-04-14 The United States Of America As Represented By The Secretary Of The Navy Protective coating system for aluminum
US6095083A (en) 1991-06-27 2000-08-01 Applied Materiels, Inc. Vacuum processing chamber having multi-mode access
DE4122452C2 (de) 1991-07-06 1993-10-28 Schott Glaswerke Verfahren und Vorrichtung zum Zünden von CVD-Plasmen
JPH0523079A (ja) 1991-07-19 1993-02-02 Shimano Inc 釣り竿及びその製造方法
US5277932A (en) 1991-07-29 1994-01-11 Syracuse University CVD method for forming metal boride films using metal borane cluster compounds
US5137286A (en) 1991-08-23 1992-08-11 General Electric Company Permanent magnet floating shaft seal
JP3040212B2 (ja) 1991-09-05 2000-05-15 株式会社東芝 気相成長装置
US5294778A (en) 1991-09-11 1994-03-15 Lam Research Corporation CVD platen heater system utilizing concentric electric heating elements
US5154301A (en) 1991-09-12 1992-10-13 Fluoroware, Inc. Wafer carrier
CA2078540A1 (en) 1991-09-17 1993-03-18 So Tanaka Superconducting thin film formed of oxide superconductor material, superconducting device utilizing the superconducting thin film
FR2682047B1 (fr) 1991-10-07 1993-11-12 Commissariat A Energie Atomique Reacteur de traitement chimique en phase gazeuse.
JPH05118928A (ja) 1991-10-25 1993-05-14 Tokyo Electron Ltd 接触式の温度測定方法
US5199603A (en) 1991-11-26 1993-04-06 Prescott Norman F Delivery system for organometallic compounds
US6400996B1 (en) 1999-02-01 2002-06-04 Steven M. Hoffberg Adaptive pattern recognition based control system and method
JPH05171446A (ja) 1991-12-24 1993-07-09 Furukawa Electric Co Ltd:The 薄膜形成方法
US5414221A (en) 1991-12-31 1995-05-09 Intel Corporation Embedded ground plane and shielding structures using sidewall insulators in high frequency circuits having vias
JPH05190462A (ja) * 1992-01-10 1993-07-30 Toshiba Corp プラズマｃｖｄ装置
US5215588A (en) 1992-01-17 1993-06-01 Amtech Systems, Inc. Photo-CVD system
US6379466B1 (en) 1992-01-17 2002-04-30 Applied Materials, Inc. Temperature controlled gas distribution plate
US5480818A (en) 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor
JP2506539B2 (ja) 1992-02-27 1996-06-12 株式会社ジーティシー 絶縁膜の形成方法
NL9200446A (nl) 1992-03-10 1993-10-01 Tempress B V Inrichting voor het behandelen van microschakeling-schijven (wafers).
US5226383A (en) 1992-03-12 1993-07-13 Bell Communications Research, Inc. Gas foil rotating substrate holder
JPH05267186A (ja) 1992-03-18 1993-10-15 Fujitsu Ltd 気相成長装置および該装置を用いた気相成長方法
JP3191392B2 (ja) 1992-04-07 2001-07-23 神鋼電機株式会社 クリーンルーム用密閉式コンテナ
JPH05291142A (ja) 1992-04-15 1993-11-05 Nec Corp 液体ソース供給装置
US5455069A (en) 1992-06-01 1995-10-03 Motorola, Inc. Method of improving layer uniformity in a CVD reactor
US5461214A (en) 1992-06-15 1995-10-24 Thermtec, Inc. High performance horizontal diffusion furnace system
DE69320963T2 (de) 1992-06-22 1999-05-12 Lam Research Corp., Fremont, Calif. Plasmareinigungsverfahren zum entfernen von rückständen in einer plasmabehandlungskammer
US5534072A (en) 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
JP3148004B2 (ja) 1992-07-06 2001-03-19 株式会社東芝 光ｃｖｄ装置及びこれを用いた半導体装置の製造方法
US5601641A (en) 1992-07-21 1997-02-11 Tse Industries, Inc. Mold release composition with polybutadiene and method of coating a mold core
US5306666A (en) 1992-07-24 1994-04-26 Nippon Steel Corporation Process for forming a thin metal film by chemical vapor deposition
JPH0653210A (ja) 1992-07-28 1994-02-25 Nec Corp 半導体装置
KR100304127B1 (ko) 1992-07-29 2001-11-30 이노마다 시게오 가반식 밀폐 컨테이너를 사용한 전자기판 처리시스템과 그의 장치
ES2078718T3 (es) 1992-08-04 1995-12-16 Ibm Estructuras de cadenas de fabricacion a base de transportadores totalmente automatizados e informatizados adaptados a recipientes transportables estancos a presion.
US5271967A (en) 1992-08-21 1993-12-21 General Motors Corporation Method and apparatus for application of thermal spray coatings to engine blocks
USD363464S (en) 1992-08-27 1995-10-24 Tokyo Electron Yamanashi Limited Electrode for a semiconductor processing apparatus
US5338362A (en) 1992-08-29 1994-08-16 Tokyo Electron Limited Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments
JP3183575B2 (ja) 1992-09-03 2001-07-09 東京エレクトロン株式会社 処理装置および処理方法
US5326427A (en) 1992-09-11 1994-07-05 Lsi Logic Corporation Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation
US5246218A (en) 1992-09-25 1993-09-21 Intel Corporation Apparatus for securing an automatically loaded wafer cassette on a wafer processing equipment
US6438502B1 (en) 1992-10-07 2002-08-20 Dallas Semiconductor Corporation Environmental condition sensor device and method
USD354898S (en) 1992-10-13 1995-01-31 Verdel Innovations Egg holder for use with a stand for decorating eggs
JP3190745B2 (ja) 1992-10-27 2001-07-23 株式会社東芝 気相成長方法
JP3093487B2 (ja) 1992-10-28 2000-10-03 松下電子工業株式会社 半導体装置およびその製造方法
US6235858B1 (en) 1992-10-30 2001-05-22 Ppg Industries Ohio, Inc. Aminoplast curable film-forming compositions providing films having resistance to acid etching
JPH06295862A (ja) 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
JPH086181B2 (ja) 1992-11-30 1996-01-24 日本電気株式会社 化学気相成長法および化学気相成長装置
IT1257434B (it) 1992-12-04 1996-01-17 Cselt Centro Studi Lab Telecom Generatore di vapori per impianti di deposizione chimica da fase vapore
US5382311A (en) 1992-12-17 1995-01-17 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
DE4244189C2 (de) 1992-12-24 1995-06-01 Busch Dieter & Co Prueftech Anlegetemperaturfühler
US5453124A (en) 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
CA2114294A1 (en) 1993-01-05 1995-07-27 Thomas Earle Allen Apparatus and method for continuously mixing fluids
KR100251873B1 (ko) 1993-01-21 2000-04-15 마쓰바 구니유키 종형 열처리 장치
US5444217A (en) 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5820686A (en) 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5709745A (en) 1993-01-25 1998-01-20 Ohio Aerospace Institute Compound semi-conductors and controlled doping thereof
JPH06319177A (ja) 1993-02-24 1994-11-15 Hewlett Packard Co <Hp> 適応遠隔制御システム
US5421893A (en) 1993-02-26 1995-06-06 Applied Materials, Inc. Susceptor drive and wafer displacement mechanism
JP3348936B2 (ja) 1993-10-21 2002-11-20 東京エレクトロン株式会社 縦型熱処理装置
JP2948437B2 (ja) 1993-03-18 1999-09-13 富士通株式会社 論理シミュレーション用のデータ作成方法
JP3265042B2 (ja) 1993-03-18 2002-03-11 東京エレクトロン株式会社 成膜方法
US5305417A (en) 1993-03-26 1994-04-19 Texas Instruments Incorporated Apparatus and method for determining wafer temperature using pyrometry
DE4311197A1 (de) 1993-04-05 1994-10-06 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Verfahren zum Betreiben einer inkohärent strahlenden Lichtquelle
US5346961A (en) 1993-04-07 1994-09-13 Union Carbide Chemicals & Plastics Technology Corporation Process for crosslinking
ATE204491T1 (de) 1993-04-17 2001-09-15 Messer Griesheim Austria Ges M Gerät zur kontrollierten zudosierung von no zur atemluft von patienten
JPH06310438A (ja) 1993-04-22 1994-11-04 Mitsubishi Electric Corp 化合物半導体気相成長用基板ホルダおよび化合物半導体気相成長装置
US5404082A (en) 1993-04-23 1995-04-04 North American Philips Corporation High frequency inverter with power-line-controlled frequency modulation
USD353452S (en) 1993-04-27 1994-12-13 Groenhoff Larry C Window adapter for portable box fans
JP2508581B2 (ja) 1993-05-28 1996-06-19 日本電気株式会社 化学気相成長法
US5501740A (en) 1993-06-04 1996-03-26 Applied Science And Technology, Inc. Microwave plasma reactor
US5354580A (en) 1993-06-08 1994-10-11 Cvd Incorporated Triangular deposition chamber for a vapor deposition system
US5616264A (en) 1993-06-15 1997-04-01 Tokyo Electron Limited Method and apparatus for controlling temperature in rapid heat treatment system
JPH0799162A (ja) 1993-06-21 1995-04-11 Hitachi Ltd Ｃｖｄリアクタ装置
ES2126022T3 (es) 1993-06-28 1999-03-16 Canon Kk Resistencia generadora de calor que contiene tan0,8, substrato dotado de dicha resistencia generadora de calor, para cabezal por chorros de liquido, cabezal para chorros de liquido dotado de dicho substrato y aparato de chorros de tinta dotado del cabezal para chorros de liquido.
US5997768A (en) 1993-06-29 1999-12-07 Ciba Specialty Chemicals Corporation Pelletization of metal soap powders
US5484484A (en) 1993-07-03 1996-01-16 Tokyo Electron Kabushiki Thermal processing method and apparatus therefor
US5972196A (en) 1995-06-07 1999-10-26 Lynntech, Inc. Electrochemical production of ozone and hydrogen peroxide
JPH0729836A (ja) 1993-07-14 1995-01-31 Sony Corp プラズマシリコンナイトライド膜の形成方法
JP3667781B2 (ja) 1993-07-16 2005-07-06 株式会社日立製作所 エンジンシステムの診断装置
US5415753A (en) 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
US5350480A (en) 1993-07-23 1994-09-27 Aspect International, Inc. Surface cleaning and conditioning using hot neutral gas beam array
US5348774A (en) 1993-08-11 1994-09-20 Alliedsignal Inc. Method of rapidly densifying a porous structure
JP3418458B2 (ja) 1993-08-31 2003-06-23 富士通株式会社 半導体装置の製造方法
US5418382A (en) 1993-09-23 1995-05-23 Fsi International, Inc. Substrate location and detection apparatus
US5417803A (en) 1993-09-29 1995-05-23 Intel Corporation Method for making Si/SiC composite material
JPH07109576A (ja) 1993-10-07 1995-04-25 Shinko Seiki Co Ltd プラズマｃｖｄによる成膜方法
US6122036A (en) 1993-10-21 2000-09-19 Nikon Corporation Projection exposure apparatus and method
JP2682403B2 (ja) 1993-10-29 1997-11-26 日本電気株式会社 半導体装置の製造方法
US5413813A (en) 1993-11-23 1995-05-09 Enichem S.P.A. CVD of silicon-based ceramic materials on internal surface of a reactor
US5463176A (en) 1994-01-03 1995-10-31 Eckert; C. Edward Liquid waste oxygenation
JPH07209093A (ja) 1994-01-20 1995-08-11 Tokyo Electron Ltd 温度計
US5616947A (en) 1994-02-01 1997-04-01 Matsushita Electric Industrial Co., Ltd. Semiconductor device having an MIS structure
US5681779A (en) 1994-02-04 1997-10-28 Lsi Logic Corporation Method of doping metal layers for electromigration resistance
JPH07225214A (ja) 1994-02-14 1995-08-22 Shimadzu Corp ＮＯｘ計測装置
JP2844304B2 (ja) 1994-02-15 1999-01-06 日本原子力研究所 プラズマ対向材料
US5766365A (en) 1994-02-23 1998-06-16 Applied Materials, Inc. Removable ring for controlling edge deposition in substrate processing apparatus
US5589002A (en) 1994-03-24 1996-12-31 Applied Materials, Inc. Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing
US5900103A (en) 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
JP3211548B2 (ja) 1994-03-30 2001-09-25 ウシオ電機株式会社 誘電体バリア放電蛍光ランプ
JPH07283149A (ja) 1994-04-04 1995-10-27 Nissin Electric Co Ltd 薄膜気相成長装置
US5685914A (en) 1994-04-05 1997-11-11 Applied Materials, Inc. Focus ring for semiconductor wafer processing in a plasma reactor
JPH07297271A (ja) 1994-04-22 1995-11-10 Shinko Electric Co Ltd 異サイズのウェ−ハカセットを任意に支持可能な支持機構
US5431734A (en) 1994-04-28 1995-07-11 International Business Machines Corporation Aluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical control
US6447232B1 (en) 1994-04-28 2002-09-10 Semitool, Inc. Semiconductor wafer processing apparatus having improved wafer input/output handling system
RU95106478A (ru) 1994-04-29 1997-01-20 Моторола Устройство и способ для разложения химических соединений
US5456207A (en) 1994-05-16 1995-10-10 The United States Of America As Represented By The Secretary Of The Navy Synthesis of triisopropylindium diisopropyltelluride adduct and use for semiconductor materials
US5775889A (en) 1994-05-17 1998-07-07 Tokyo Electron Limited Heat treatment process for preventing slips in semiconductor wafers
US5531835A (en) 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
JP3181171B2 (ja) 1994-05-20 2001-07-03 シャープ株式会社 気相成長装置および気相成長方法
KR0144956B1 (ko) 1994-06-10 1998-08-17 김광호 반도체 장치의 배선 구조 및 그 형성방법
KR100306527B1 (ko) 1994-06-15 2002-06-26 구사마 사부로 박막반도체장치의제조방법,박막반도체장치
US5423942A (en) 1994-06-20 1995-06-13 Texas Instruments Incorporated Method and apparatus for reducing etching erosion in a plasma containment tube
US5504042A (en) 1994-06-23 1996-04-02 Texas Instruments Incorporated Porous dielectric material with improved pore surface properties for electronics applications
US5510277A (en) 1994-06-29 1996-04-23 At&T Corp. Surface treatment for silicon substrates
JP2709568B2 (ja) 1994-06-30 1998-02-04 日本プレシジョン・サーキッツ株式会社 ダウンフロー型スピンドライヤ
US6022414A (en) 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
US5838029A (en) 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
US5730801A (en) 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
US5669713A (en) 1994-09-27 1997-09-23 Rosemount Inc. Calibration of process control temperature transmitter
JP3632256B2 (ja) 1994-09-30 2005-03-23 株式会社デンソー 窒化シリコン膜を有する半導体装置の製造方法
US5514439A (en) 1994-10-14 1996-05-07 Sibley; Thomas Wafer support fixtures for rapid thermal processing
US5576629A (en) 1994-10-24 1996-11-19 Fourth State Technology, Inc. Plasma monitoring and control method and system
JP2845163B2 (ja) 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
EP0792493B1 (en) 1994-11-08 1999-08-11 Vermeer Technologies, Inc. An online service development tool with fee setting capabilities
US5562947A (en) 1994-11-09 1996-10-08 Sony Corporation Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment
US6699530B2 (en) 1995-07-06 2004-03-02 Applied Materials, Inc. Method for constructing a film on a semiconductor wafer
US5583736A (en) 1994-11-17 1996-12-10 The United States Of America As Represented By The Department Of Energy Micromachined silicon electrostatic chuck
FI97730C (fi) 1994-11-28 1997-02-10 Mikrokemia Oy Laitteisto ohutkalvojen valmistamiseksi
FI100409B (fi) 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
FI97731C (fi) 1994-11-28 1997-02-10 Mikrokemia Oy Menetelmä ja laite ohutkalvojen valmistamiseksi
US5558717A (en) 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
JPH08181135A (ja) 1994-12-22 1996-07-12 Sharp Corp 半導体装置の製造方法
US5776254A (en) 1994-12-28 1998-07-07 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming thin film by chemical vapor deposition
US5716133A (en) 1995-01-17 1998-02-10 Applied Komatsu Technology, Inc. Shielded heat sensor for measuring temperature
US5586585A (en) 1995-02-27 1996-12-24 Asyst Technologies, Inc. Direct loadlock interface
JP3151118B2 (ja) 1995-03-01 2001-04-03 東京エレクトロン株式会社 熱処理装置
AUPN164695A0 (en) 1995-03-10 1995-04-06 Luminis Pty Limited Improved induction nozzle and arrangement
US5662470A (en) 1995-03-31 1997-09-02 Asm International N.V. Vertical furnace
US5518549A (en) 1995-04-18 1996-05-21 Memc Electronic Materials, Inc. Susceptor and baffle therefor
JP3360098B2 (ja) 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
US5852879A (en) 1995-04-26 1998-12-29 Schumaier; Daniel R. Moisture sensitive item drying appliance
SE506163C2 (sv) 1995-04-27 1997-11-17 Ericsson Telefon Ab L M Anordning vid ett kiselsubstrat med ett urtag för upptagande av ett element jämte förfarande för framställande av en dylik anordning
US5761328A (en) 1995-05-22 1998-06-02 Solberg Creations, Inc. Computer automated system and method for converting source-documents bearing alphanumeric text relating to survey measurements
US5698036A (en) 1995-05-26 1997-12-16 Tokyo Electron Limited Plasma processing apparatus
US5540898A (en) 1995-05-26 1996-07-30 Vasogen Inc. Ozone generator with in-line ozone sensor
US5708825A (en) 1995-05-26 1998-01-13 Iconovex Corporation Automatic summary page creation and hyperlink generation
US5663899A (en) 1995-06-05 1997-09-02 Advanced Micro Devices Redundant thermocouple
US6190634B1 (en) 1995-06-07 2001-02-20 President And Fellows Of Harvard College Carbide nanomaterials
US5683517A (en) 1995-06-07 1997-11-04 Applied Materials, Inc. Plasma reactor with programmable reactant gas distribution
US5982931A (en) 1995-06-07 1999-11-09 Ishimaru; Mikio Apparatus and method for the manipulation of image containing documents
JPH08335558A (ja) 1995-06-08 1996-12-17 Nissin Electric Co Ltd 薄膜気相成長装置
JP3380091B2 (ja) 1995-06-09 2003-02-24 株式会社荏原製作所 反応ガス噴射ヘッド及び薄膜気相成長装置
US5685912A (en) 1995-06-20 1997-11-11 Sony Corporation Pressure control system for semiconductor manufacturing equipment
USD392855S (en) 1995-06-26 1998-03-31 Pillow Daryl R Floor protection template for use while spray-painting door frames
US20020114886A1 (en) 1995-07-06 2002-08-22 Applied Materials, Inc. Method of tisin deposition using a chemical vapor deposition process
TW294820B (en) 1995-07-10 1997-01-01 Watkins Johnson Co Gas distribution apparatus
TW283250B (en) 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
US6093252A (en) 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
NO953217L (no) 1995-08-16 1997-02-17 Aker Eng As Metode og innretning ved rörbunter
JPH0964149A (ja) 1995-08-29 1997-03-07 Hitachi Electron Eng Co Ltd 半導体製造装置
US6113702A (en) 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
AU6962196A (en) 1995-09-01 1997-03-27 Advanced Semiconductor Materials America, Inc. Wafer support system
JP3504784B2 (ja) 1995-09-07 2004-03-08 東京エレクトロン株式会社 熱処理方法
TW371796B (en) 1995-09-08 1999-10-11 Semiconductor Energy Lab Co Ltd Method and apparatus for manufacturing a semiconductor device
US5791782A (en) 1995-09-21 1998-08-11 Fusion Systems Corporation Contact temperature probe with unrestrained orientation
JPH0989676A (ja) 1995-09-21 1997-04-04 Casio Comput Co Ltd 電子体温計
DE19535178C2 (de) 1995-09-22 2001-07-19 Jenoptik Jena Gmbh Einrichtung zum Ver- und Entriegeln einer Tür eines Behälters
US5997588A (en) 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
DE29517100U1 (de) 1995-10-17 1997-02-13 Zimmer, Johannes, Klagenfurt Strömungsteilungs- und -umformungskörper
TW356554B (en) 1995-10-23 1999-04-21 Watkins Johnson Co Gas injection system for semiconductor processing
US5801104A (en) 1995-10-24 1998-09-01 Micron Technology, Inc. Uniform dielectric film deposition on textured surfaces
US6299404B1 (en) 1995-10-27 2001-10-09 Brooks Automation Inc. Substrate transport apparatus with double substrate holders
KR100201386B1 (ko) 1995-10-28 1999-06-15 구본준 화학기상증착장비의 반응가스 분사장치
IL115931A0 (en) 1995-11-09 1996-01-31 Oramir Semiconductor Ltd Laser stripping improvement by modified gas composition
US5736314A (en) 1995-11-16 1998-04-07 Microfab Technologies, Inc. Inline thermo-cycler
JPH09148322A (ja) 1995-11-22 1997-06-06 Sharp Corp シリコン酸化膜の成膜方法及びプラズマｃｖｄ成膜装置
US5796074A (en) 1995-11-28 1998-08-18 Applied Materials, Inc. Wafer heater assembly
US5768125A (en) 1995-12-08 1998-06-16 Asm International N.V. Apparatus for transferring a substantially circular article
JPH09172055A (ja) 1995-12-19 1997-06-30 Fujitsu Ltd 静電チャック及びウエハの吸着方法
US5954375A (en) 1995-12-21 1999-09-21 Edstrom Industries, Inc. Sanitary fitting having ferrule with grooved undercut
US5697706A (en) 1995-12-26 1997-12-16 Chrysler Corporation Multi-point temperature probe
KR100267418B1 (ko) 1995-12-28 2000-10-16 엔도 마코토 플라스마처리방법및플라스마처리장치
US5679215A (en) 1996-01-02 1997-10-21 Lam Research Corporation Method of in situ cleaning a vacuum plasma processing chamber
JPH09205130A (ja) 1996-01-17 1997-08-05 Applied Materials Inc ウェハ支持装置
US6017818A (en) 1996-01-22 2000-01-25 Texas Instruments Incorporated Process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density
US5632919A (en) 1996-01-25 1997-05-27 T.G.M., Inc. Temperature controlled insulation system
JPH09213772A (ja) 1996-01-30 1997-08-15 Dainippon Screen Mfg Co Ltd 基板保持装置
AU1843597A (en) 1996-01-31 1997-08-22 Asm America, Inc. Model-based predictive control of thermal processing
US6054013A (en) 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
JP3769802B2 (ja) 1996-02-09 2006-04-26 株式会社日立製作所 半導体装置の製造方法
SE9600705D0 (sv) 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
US5837320A (en) 1996-02-27 1998-11-17 The University Of New Mexico Chemical vapor deposition of metal sulfide films from metal thiocarboxylate complexes with monodenate or multidentate ligands
US5732744A (en) 1996-03-08 1998-03-31 Control Systems, Inc. Method and apparatus for aligning and supporting semiconductor process gas delivery and regulation components
US5656093A (en) 1996-03-08 1997-08-12 Applied Materials, Inc. Wafer spacing mask for a substrate support chuck and method of fabricating same
DE19609678C2 (de) 1996-03-12 2003-04-17 Infineon Technologies Ag Speicherzellenanordnung mit streifenförmigen, parallel verlaufenden Gräben und vertikalen MOS-Transistoren und Verfahren zu deren Herstellung
USD411516S (en) 1996-03-15 1999-06-29 Tokyo Electron Limited Gas diffusion plate for electrode of semiconductor wafer processing apparatus
USD380527S (en) 1996-03-19 1997-07-01 Cherle Velez Sink drain shield
DE69732722T2 (de) 1996-03-22 2006-02-02 Taiyo Nippon Sanso Corporation CVD Verfahren
US5653807A (en) 1996-03-28 1997-08-05 The United States Of America As Represented By The Secretary Of The Air Force Low temperature vapor phase epitaxial system for depositing thin layers of silicon-germanium alloy
US6106678A (en) 1996-03-29 2000-08-22 Lam Research Corporation Method of high density plasma CVD gap-filling
US5667592A (en) 1996-04-16 1997-09-16 Gasonics International Process chamber sleeve with ring seals for isolating individual process modules in a common cluster
KR100212132B1 (ko) 1996-04-24 1999-08-02 윤종용 횡형 확산로의 프로파일 열전대
US5819434A (en) 1996-04-25 1998-10-13 Applied Materials, Inc. Etch enhancement using an improved gas distribution plate
USD386076S (en) 1996-05-14 1997-11-11 Camco Manufacturing, Inc. Awning clamp
US5844683A (en) 1996-05-22 1998-12-01 Applied Materials, Inc. Position sensor system for substrate holders
US5920798A (en) 1996-05-28 1999-07-06 Matsushita Battery Industrial Co., Ltd. Method of preparing a semiconductor layer for an optical transforming device
US6001183A (en) 1996-06-10 1999-12-14 Emcore Corporation Wafer carriers for epitaxial growth processes
US6534133B1 (en) 1996-06-14 2003-03-18 Research Foundation Of State University Of New York Methodology for in-situ doping of aluminum coatings
US6342277B1 (en) 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5801945A (en) 1996-06-28 1998-09-01 Lam Research Corporation Scheduling method for robotic manufacturing processes
US5779203A (en) 1996-06-28 1998-07-14 Edlinger; Erich Adjustable wafer cassette stand
US5950327A (en) 1996-07-08 1999-09-14 Speedfam-Ipec Corporation Methods and apparatus for cleaning and drying wafers
US5915562A (en) 1996-07-12 1999-06-29 Fluoroware, Inc. Transport module with latching door
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US5837058A (en) 1996-07-12 1998-11-17 Applied Materials, Inc. High temperature susceptor
US5993916A (en) 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
EP0818671A3 (en) 1996-07-12 1998-07-08 Isuzu Ceramics Research Institute Co., Ltd. A ceramic sheath type thermocouple
US5700729A (en) 1996-07-15 1997-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Masked-gate MOS S/D implantation
US5827757A (en) 1996-07-16 1998-10-27 Direct Radiography Corp. Fabrication of large area x-ray image capturing element
EP0821395A3 (en) 1996-07-19 1998-03-25 Tokyo Electron Limited Plasma processing apparatus
JP3122617B2 (ja) 1996-07-19 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
US5879128A (en) 1996-07-24 1999-03-09 Applied Materials, Inc. Lift pin and support pin apparatus for a processing chamber
US5781693A (en) 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US5724748A (en) 1996-07-24 1998-03-10 Brooks; Ray G. Apparatus for packaging contaminant-sensitive articles and resulting package
US5987480A (en) 1996-07-25 1999-11-16 Donohue; Michael Method and system for delivering documents customized for a particular user over the internet using imbedded dynamic content
JPH1050800A (ja) 1996-08-05 1998-02-20 Canon Sales Co Inc 処理装置
US5928426A (en) 1996-08-08 1999-07-27 Novellus Systems, Inc. Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors
KR0183912B1 (ko) 1996-08-08 1999-05-01 김광호 다중 반응 챔버에 연결된 펌핑 설비 및 이를 사용하는 방법
US5916365A (en) 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
JP3122618B2 (ja) 1996-08-23 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
TW344847B (en) 1996-08-29 1998-11-11 Tokyo Electron Co Ltd Substrate treatment system, substrate transfer system, and substrate transfer method
US5806980A (en) 1996-09-11 1998-09-15 Novellus Systems, Inc. Methods and apparatus for measuring temperatures at high potential
US5857777A (en) 1996-09-25 1999-01-12 Claud S. Gordon Company Smart temperature sensing device
US5880980A (en) 1996-09-30 1999-03-09 Rockwell International Corporation Distributed decimation sample rate conversion
US6048154A (en) 1996-10-02 2000-04-11 Applied Materials, Inc. High vacuum dual stage load lock and method for loading and unloading wafers using a high vacuum dual stage load lock
US5950925A (en) 1996-10-11 1999-09-14 Ebara Corporation Reactant gas ejector head
KR19980026850A (ko) 1996-10-11 1998-07-15 김광호 웨이퍼의 휨을 검사하는 기능을 갖는 급속 열처리 장비
US5818716A (en) 1996-10-18 1998-10-06 Taiwan Semiconductor Manufacturing Company Ltd. Dynamic lot dispatching required turn rate factory control system and method of operation thereof
US5928389A (en) 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
US6073973A (en) 1996-10-31 2000-06-13 Stanley Aviation Corporation Lightweight positive lock coupling
US6444037B1 (en) 1996-11-13 2002-09-03 Applied Materials, Inc. Chamber liner for high temperature processing chamber
US6347636B1 (en) 1996-11-13 2002-02-19 Applied Materials, Inc. Methods and apparatus for gettering fluorine from chamber material surfaces
US6152070A (en) 1996-11-18 2000-11-28 Applied Materials, Inc. Tandem process chamber
US6126744A (en) 1996-11-18 2000-10-03 Asm America, Inc. Method and system for adjusting semiconductor processing equipment
US5855681A (en) 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
JP3740587B2 (ja) 1996-11-25 2006-02-01 山里産業株式会社 熱電対
CN1186873A (zh) 1996-11-26 1998-07-08 西门子公司 带多个气体入口和独立质流控制回路的反应室的分布板
US5836483A (en) 1997-02-05 1998-11-17 Aerotech Dental Systems, Inc. Self-regulating fluid dispensing cap with safety pressure relief valve for dental/medical unit fluid bottles
US5753835A (en) 1996-12-12 1998-05-19 Caterpillar Inc. Receptacle for holding a sensing device
US6367410B1 (en) 1996-12-16 2002-04-09 Applied Materials, Inc. Closed-loop dome thermal control apparatus for a semiconductor wafer processing system
US5953635A (en) 1996-12-19 1999-09-14 Intel Corporation Interlayer dielectric with a composite dielectric stack
US5984391A (en) 1997-02-03 1999-11-16 Novellus Systems, Inc. Microfeature wafer handling apparatus and methods
US5893741A (en) 1997-02-07 1999-04-13 National Science Council Method for simultaneously forming local interconnect with silicided elevated source/drain MOSFET's
US20020174106A1 (en) 1997-02-10 2002-11-21 Actioneer, Inc. Method and apparatus for receiving information in response to a request
US6035101A (en) 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
JP3492135B2 (ja) 1997-02-13 2004-02-03 三菱重工業株式会社 熱流束計
US6127249A (en) 1997-02-20 2000-10-03 Micron Technology, Inc. Metal silicidation methods and methods for using same
US6447937B1 (en) 1997-02-26 2002-09-10 Kyocera Corporation Ceramic materials resistant to halogen plasma and components using the same
US6461982B2 (en) 1997-02-27 2002-10-08 Micron Technology, Inc. Methods for forming a dielectric film
JPH10239165A (ja) 1997-02-27 1998-09-11 Sony Corp 基板の温度測定器、基板の温度を測定する方法および基板の加熱方法
EP0963552B1 (en) 1997-02-28 2003-07-09 Extraction Systems, Inc. System for detecting amine and other basic molecular contamination in a gas
US6096267A (en) 1997-02-28 2000-08-01 Extraction Systems, Inc. System for detecting base contaminants in air
US5879459A (en) 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US6174377B1 (en) 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
US5947718A (en) 1997-03-07 1999-09-07 Semitool, Inc. Semiconductor processing furnace
JP3124506B2 (ja) 1997-03-14 2001-01-15 白光株式会社 ヒータ・センサ複合体
US6214122B1 (en) 1997-03-17 2001-04-10 Motorola, Inc. Rapid thermal processing susceptor
US5866795A (en) 1997-03-17 1999-02-02 Applied Materials, Inc. Liquid flow rate estimation and verification by direct liquid measurement
US6287988B1 (en) 1997-03-18 2001-09-11 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device
JPH10261620A (ja) 1997-03-19 1998-09-29 Hitachi Ltd 表面処理装置
EP0865735A1 (en) 1997-03-19 1998-09-23 Societe Des Produits Nestle S.A. Process for sterilising beverages
US5872065A (en) 1997-04-02 1999-02-16 Applied Materials Inc. Method for depositing low K SI-O-F films using SIF4 /oxygen chemistry
US6891138B2 (en) 1997-04-04 2005-05-10 Robert C. Dalton Electromagnetic susceptors with coatings for artificial dielectric systems and devices
US5865205A (en) 1997-04-17 1999-02-02 Applied Materials, Inc. Dynamic gas flow controller
JP3752578B2 (ja) 1997-04-21 2006-03-08 株式会社フジキン 流体制御器用加熱装置
US6026762A (en) 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
US6190113B1 (en) 1997-04-30 2001-02-20 Applied Materials, Inc. Quartz pin lift for single wafer chemical vapor deposition/etch process chamber
NL1005963C2 (nl) 1997-05-02 1998-11-09 Asm Int Verticale oven voor het behandelen van halfgeleidersubstraten.
US6053983A (en) 1997-05-08 2000-04-25 Tokyo Electron, Ltd. Wafer for carrying semiconductor wafers and method detecting wafers on carrier
US5904170A (en) 1997-05-14 1999-05-18 Applied Materials, Inc. Pressure flow and concentration control of oxygen/ozone gas mixtures
JP3230051B2 (ja) 1997-05-16 2001-11-19 東京エレクトロン株式会社 乾燥処理方法及びその装置
US6390754B2 (en) 1997-05-21 2002-05-21 Tokyo Electron Limited Wafer processing apparatus, method of operating the same and wafer detecting system
JPH1144799A (ja) 1997-05-27 1999-02-16 Ushio Inc 光路分割型紫外線照射装置
US5937323A (en) 1997-06-03 1999-08-10 Applied Materials, Inc. Sequencing of the recipe steps for the optimal low-k HDP-CVD processing
US6201999B1 (en) 1997-06-09 2001-03-13 Applied Materials, Inc. Method and apparatus for automatically generating schedules for wafer processing within a multichamber semiconductor wafer processing tool
US6104401A (en) 1997-06-12 2000-08-15 Netscape Communications Corporation Link filters
EP0887632A1 (en) 1997-06-24 1998-12-30 Isuzu Ceramics Research Institute Co., Ltd. A ceramic thermocouple for measuring temperature of molten metal
US5968275A (en) 1997-06-25 1999-10-19 Lam Research Corporation Methods and apparatus for passivating a substrate in a plasma reactor
US5759281A (en) 1997-06-30 1998-06-02 Emcore Corporation CVD reactor for uniform heating with radiant heating filaments
US6531193B2 (en) 1997-07-07 2003-03-11 The Penn State Research Foundation Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications
US6576064B2 (en) 1997-07-10 2003-06-10 Sandia Corporation Support apparatus for semiconductor wafer processing
US6312525B1 (en) 1997-07-11 2001-11-06 Applied Materials, Inc. Modular architecture for semiconductor wafer fabrication equipment
US6024799A (en) 1997-07-11 2000-02-15 Applied Materials, Inc. Chemical vapor deposition manifold
US6083321A (en) 1997-07-11 2000-07-04 Applied Materials, Inc. Fluid delivery system and method
US5975492A (en) 1997-07-14 1999-11-02 Brenes; Arthur Bellows driver slot valve
US6099596A (en) 1997-07-23 2000-08-08 Applied Materials, Inc. Wafer out-of-pocket detection tool
US6020243A (en) 1997-07-24 2000-02-01 Texas Instruments Incorporated Zirconium and/or hafnium silicon-oxynitride gate dielectric
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
KR100385946B1 (ko) 1999-12-08 2003-06-02 삼성전자주식회사 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자
US5827420A (en) 1997-07-29 1998-10-27 World Precision Instruments, Inc. Method and apparatus for the generation of nitric oxide
US6135460A (en) 1997-07-31 2000-10-24 Texas Instruments Incorporated Method of and apparatus for purifying reduced pressure process chambers
US5884640A (en) 1997-08-07 1999-03-23 Applied Materials, Inc. Method and apparatus for drying substrates
US7393561B2 (en) 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
US20030049372A1 (en) 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
US6321680B2 (en) 1997-08-11 2001-11-27 Torrex Equipment Corporation Vertical plasma enhanced process apparatus and method
JP3317209B2 (ja) 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
US6121158A (en) 1997-08-13 2000-09-19 Sony Corporation Method for hardening a photoresist material formed on a substrate
US6090212A (en) 1997-08-15 2000-07-18 Micro C Technologies, Inc. Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate
US6530994B1 (en) 1997-08-15 2003-03-11 Micro C Technologies, Inc. Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
US6242359B1 (en) 1997-08-20 2001-06-05 Air Liquide America Corporation Plasma cleaning and etching methods using non-global-warming compounds
USD404370S (en) 1997-08-20 1999-01-19 Tokyo Electron Limited Cap for use in a semiconductor wafer heat processing apparatus
USD404372S (en) 1997-08-20 1999-01-19 Tokyo Electron Limited Ring for use in a semiconductor wafer heat processing apparatus
KR100253664B1 (ko) 1997-08-22 2000-04-15 이해광 폴리이미드 건조기의 작동 시스템
US6104011A (en) 1997-09-04 2000-08-15 Watlow Electric Manufacturing Company Sheathed thermocouple with internal coiled wires
AUPO904597A0 (en) 1997-09-08 1997-10-02 Canon Information Systems Research Australia Pty Ltd Method for non-linear document conversion and printing
US6027163A (en) 1997-09-10 2000-02-22 Graco Children's Products Inc. Juvenile carrier with moveable canopy
JP3581537B2 (ja) 1997-09-24 2004-10-27 三菱重工業株式会社 高周波加熱コイルの設置間隙保持装置
US6348376B2 (en) 1997-09-29 2002-02-19 Samsung Electronics Co., Ltd. Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same
US6161500A (en) 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
WO1999018496A1 (en) 1997-10-07 1999-04-15 Electronics Development Corporation Transducer assembly with smart connector
JPH11118615A (ja) 1997-10-09 1999-04-30 Kakunenryo Cycle Kaihatsu Kiko 伸縮性を有する被測定物用温度センサ
US6624064B1 (en) 1997-10-10 2003-09-23 Applied Materials, Inc. Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application
US5908672A (en) 1997-10-15 1999-06-01 Applied Materials, Inc. Method and apparatus for depositing a planarized passivation layer
JP2001522142A (ja) 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド 改良された低質量ウェハ支持システム
WO1999023276A1 (en) 1997-11-03 1999-05-14 Asm America, Inc. Long life high temperature process chamber
JP2001522141A (ja) 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド 低質量サポートを用いたウェハの加工方法
JPH11140648A (ja) 1997-11-07 1999-05-25 Tokyo Electron Ltd プロセスチャンバ装置及び処理装置
US6136211A (en) 1997-11-12 2000-10-24 Applied Materials, Inc. Self-cleaning etch process
JP3050193B2 (ja) 1997-11-12 2000-06-12 日本電気株式会社 半導体装置及びその製造方法
GB9724168D0 (en) 1997-11-14 1998-01-14 Air Prod & Chem Gas control device and method of supplying gas
KR100252049B1 (ko) 1997-11-18 2000-04-15 윤종용 원자층 증착법에 의한 알루미늄층의 제조방법
US6068441A (en) 1997-11-21 2000-05-30 Asm America, Inc. Substrate transfer system for semiconductor processing equipment
US6574644B2 (en) 1997-11-26 2003-06-03 Siemens Corporate Research, Inc Automatic capturing of hyperlink specifications for multimedia documents
WO1999028952A2 (en) 1997-11-28 1999-06-10 Fortrend Engineering Corporation Wafer-mapping load port interface
US6315512B1 (en) 1997-11-28 2001-11-13 Mattson Technology, Inc. Systems and methods for robotic transfer of workpieces between a storage area and a processing chamber
US6106625A (en) 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US6079356A (en) 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US6432479B2 (en) 1997-12-02 2002-08-13 Applied Materials, Inc. Method for in-situ, post deposition surface passivation of a chemical vapor deposited film
KR100295043B1 (ko) 1997-12-03 2001-10-19 윤종용 저유전상수절연막을층간절연막으로사용하는반도체장치의금속막형성방법
US6248168B1 (en) 1997-12-15 2001-06-19 Tokyo Electron Limited Spin coating apparatus including aging unit and solvent replacement unit
JPH11319545A (ja) 1997-12-15 1999-11-24 Canon Inc プラズマ処理方法及び基体の処理方法
JPH11183264A (ja) 1997-12-16 1999-07-09 Tokyo Yogyo Co Ltd 熱電対をもつ温度測定器
JPH11183265A (ja) 1997-12-16 1999-07-09 Tokyo Yogyo Co Ltd 熱電対をもつ温度測定器
US6099649A (en) 1997-12-23 2000-08-08 Applied Materials, Inc. Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal
JPH11195688A (ja) 1997-12-26 1999-07-21 Mc Electronics Kk 基板処理装置
KR100249391B1 (ko) 1997-12-30 2000-03-15 김영환 가열장치
USD409894S (en) 1997-12-30 1999-05-18 Mcclurg Ben B Sheet rock plug
KR100269328B1 (ko) 1997-12-31 2000-10-16 윤종용 원자층 증착 공정을 이용하는 도전층 형성방법
JP3314151B2 (ja) 1998-01-05 2002-08-12 株式会社日立国際電気 プラズマｃｖｄ装置及び半導体装置の製造方法
WO1999036336A1 (en) 1998-01-16 1999-07-22 Pri Automation, Inc. Semiconductor wafer cassette positioning and detection mechanism
US6091062A (en) 1998-01-27 2000-07-18 Kinetrix, Inc. Method and apparatus for temperature control of a semiconductor electrical-test contractor assembly
US6125789A (en) 1998-01-30 2000-10-03 Applied Materials, Inc. Increasing the sensitivity of an in-situ particle monitor
TWI237305B (en) 1998-02-04 2005-08-01 Nikon Corp Exposure apparatus and positioning apparatus of substrate receiving cassette
TW437017B (en) 1998-02-05 2001-05-28 Asm Japan Kk Silicone polymer insulation film on semiconductor substrate and method for formation thereof
US7354873B2 (en) 1998-02-05 2008-04-08 Asm Japan K.K. Method for forming insulation film
US6383955B1 (en) 1998-02-05 2002-05-07 Asm Japan K.K. Silicone polymer insulation film on semiconductor substrate and method for forming the film
US7582575B2 (en) 1998-02-05 2009-09-01 Asm Japan K.K. Method for forming insulation film
US6635578B1 (en) 1998-02-09 2003-10-21 Applied Materials, Inc Method of operating a dual chamber reactor with neutral density decoupled from ion density
US6074514A (en) 1998-02-09 2000-06-13 Applied Materials, Inc. High selectivity etch using an external plasma discharge
US6352049B1 (en) 1998-02-09 2002-03-05 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
US6413583B1 (en) 1998-02-11 2002-07-02 Applied Materials, Inc. Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6050506A (en) 1998-02-13 2000-04-18 Applied Materials, Inc. Pattern of apertures in a showerhead for chemical vapor deposition
US6072163A (en) 1998-03-05 2000-06-06 Fsi International Inc. Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate
US7181501B2 (en) 1998-03-19 2007-02-20 Isochron, Inc. Remote data acquisition, transmission and analysis system including handheld wireless equipment
WO1999049705A1 (en) 1998-03-20 1999-09-30 Tokyo Electron Limited Plasma processing apparatus
JP3656701B2 (ja) 1998-03-23 2005-06-08 東京エレクトロン株式会社 処理装置
JP3554219B2 (ja) 1998-03-31 2004-08-18 キヤノン株式会社 排気装置と排気方法、および堆積膜形成装置と堆積膜形成方法
JPH11287715A (ja) 1998-04-02 1999-10-19 Canon Inc 熱電対
SE9801190D0 (sv) 1998-04-06 1998-04-06 Abb Research Ltd A method and a device for epitaxial growth of objects by Chemical Vapour Deposition
US6015465A (en) 1998-04-08 2000-01-18 Applied Materials, Inc. Temperature control system for semiconductor process chamber
US6296711B1 (en) 1998-04-14 2001-10-02 Cvd Systems, Inc. Film processing system
KR100265287B1 (ko) 1998-04-21 2000-10-02 윤종용 반도체소자 제조용 식각설비의 멀티챔버 시스템
US6079927A (en) 1998-04-22 2000-06-27 Varian Semiconductor Equipment Associates, Inc. Automated wafer buffer for use with wafer processing equipment
US6120008A (en) 1998-04-28 2000-09-19 Life International Products, Inc. Oxygenating apparatus, method for oxygenating a liquid therewith, and applications thereof
KR100376984B1 (ko) 1998-04-30 2003-07-16 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
KR100376983B1 (ko) 1998-04-30 2003-08-02 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
US6287435B1 (en) 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6126848A (en) 1998-05-06 2000-10-03 International Business Machines Corporation Indirect endpoint detection by chemical reaction and chemiluminescence
US6060721A (en) 1998-05-06 2000-05-09 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus for detecting correct positioning of a wafer cassette
US20010016273A1 (en) 1998-05-08 2001-08-23 Krishnan Narasimhan Multilayer cvd coated article and process for producing same
US6218288B1 (en) 1998-05-11 2001-04-17 Micron Technology, Inc. Multiple step methods for forming conformal layers
WO1999059196A1 (en) 1998-05-11 1999-11-18 Semitool, Inc. Temperature control system for a thermal reactor
KR100309918B1 (ko) 1998-05-16 2001-12-17 윤종용 광시야각액정표시장치및그제조방법
US6284050B1 (en) 1998-05-18 2001-09-04 Novellus Systems, Inc. UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition
JP3208376B2 (ja) 1998-05-20 2001-09-10 株式会社半導体プロセス研究所 成膜方法及び半導体装置の製造方法
JPH11343571A (ja) 1998-05-29 1999-12-14 Ngk Insulators Ltd サセプター
NL1009327C2 (nl) 1998-06-05 1999-12-10 Asm Int Werkwijze en inrichting voor het overbrengen van wafers.
JPH11354637A (ja) 1998-06-11 1999-12-24 Oki Electric Ind Co Ltd 配線の接続構造及び配線の接続部の形成方法
US20020009861A1 (en) 1998-06-12 2002-01-24 Pravin K. Narwankar Method and apparatus for the formation of dielectric layers
US6146463A (en) 1998-06-12 2000-11-14 Applied Materials, Inc. Apparatus and method for aligning a substrate on a support member
US6148761A (en) 1998-06-16 2000-11-21 Applied Materials, Inc. Dual channel gas distribution plate
US6302964B1 (en) 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
JP2963443B1 (ja) 1998-06-19 1999-10-18 キヤノン販売株式会社 半導体装置の製造装置
KR20000002833A (ko) 1998-06-23 2000-01-15 윤종용 반도체 웨이퍼 보트
USD412512S (en) 1998-06-24 1999-08-03 Marc H Boisvert Tool holding device
JP3333135B2 (ja) 1998-06-25 2002-10-07 東京エレクトロン株式会社 熱処理装置及び熱処理方法
US6015459A (en) 1998-06-26 2000-01-18 Extreme Devices, Inc. Method for doping semiconductor materials
JP3472482B2 (ja) 1998-06-30 2003-12-02 富士通株式会社 半導体装置の製造方法と製造装置
US6232248B1 (en) 1998-07-03 2001-05-15 Tokyo Electron Limited Single-substrate-heat-processing method for performing reformation and crystallization
US6182603B1 (en) 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
JP2000040728A (ja) 1998-07-22 2000-02-08 Nippon Asm Kk ウェハ搬送機構
US20010001384A1 (en) 1998-07-29 2001-05-24 Takeshi Arai Silicon epitaxial wafer and production method therefor
US6344232B1 (en) 1998-07-30 2002-02-05 The United States Of America As Represented By The Secretary Of The Air Force Computer controlled temperature and oxygen maintenance for fiber coating CVD
USD412270S (en) 1998-08-10 1999-07-27 David Frank Fredrickson Article lifter
JP2000068355A (ja) 1998-08-21 2000-03-03 Dainippon Screen Mfg Co Ltd 基板処理装置
US6569971B2 (en) 1998-08-27 2003-05-27 Hyundai Electronics Industries Co., Ltd. Polymers for photoresist and photoresist compositions using the same
US6427622B2 (en) 1998-08-28 2002-08-06 Mv Systems, Inc. Hot wire chemical vapor deposition method and apparatus using graphite hot rods
US6323081B1 (en) 1998-09-03 2001-11-27 Micron Technology, Inc. Diffusion barrier layers and methods of forming same
US6190732B1 (en) 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
WO2000015884A1 (en) 1998-09-11 2000-03-23 Japan Science And Technology Corporation Combinatorial molecular layer epitaxy device
US6203969B1 (en) 1998-09-14 2001-03-20 Tokyo Electron Limited Resist processing apparatus which measures temperature of heat-sensing substrate and measuring method therein
US6284149B1 (en) 1998-09-18 2001-09-04 Applied Materials, Inc. High-density plasma etching of carbon-based low-k materials in a integrated circuit
KR100646906B1 (ko) 1998-09-22 2006-11-17 동경 엘렉트론 주식회사 기판처리장치 및 기판처리방법
US6187672B1 (en) 1998-09-22 2001-02-13 Conexant Systems, Inc. Interconnect with low dielectric constant insulators for semiconductor integrated circuit manufacturing
US6800571B2 (en) 1998-09-29 2004-10-05 Applied Materials Inc. CVD plasma assisted low dielectric constant films
US6143082A (en) 1998-10-08 2000-11-07 Novellus Systems, Inc. Isolation of incompatible processes in a multi-station processing chamber
US6257758B1 (en) 1998-10-09 2001-07-10 Claud S. Gordon Company Surface temperature sensor
USD451893S1 (en) 1998-10-15 2001-12-11 Meto International Gmbh Arrangement of aluminum foil coils forming an inductor of a resonant frequency identification element
US6462671B2 (en) 1998-10-20 2002-10-08 Brendyl Trent Bushner Remote securities based data reception and order system
US6454860B2 (en) 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
US20030101938A1 (en) 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
US6063196A (en) 1998-10-30 2000-05-16 Applied Materials, Inc. Semiconductor processing chamber calibration tool
KR100317238B1 (ko) 1998-11-03 2002-02-19 윤종용 가열로 온도검출용 스파이크 열전대 소자_
US6423613B1 (en) 1998-11-10 2002-07-23 Micron Technology, Inc. Low temperature silicon wafer bond process with bulk material bond strength
US6183564B1 (en) 1998-11-12 2001-02-06 Tokyo Electron Limited Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing system
JP2000150617A (ja) 1998-11-17 2000-05-30 Tokyo Electron Ltd 搬送装置
JP3664897B2 (ja) 1998-11-18 2005-06-29 東京エレクトロン株式会社 縦型熱処理装置
US6143079A (en) 1998-11-19 2000-11-07 Asm America, Inc. Compact process chamber for improved process uniformity
GB2344104B (en) 1998-11-27 2004-04-07 Hyundai Electronics Ind Photoresist composition comprising a cross-linker
JP2000174123A (ja) 1998-12-09 2000-06-23 Nec Corp 半導体装置及びその製造方法
US6310328B1 (en) 1998-12-10 2001-10-30 Mattson Technologies, Inc. Rapid thermal processing chamber for processing multiple wafers
JP2000183346A (ja) 1998-12-15 2000-06-30 Toshiba Corp 半導体装置及びその製造方法
JP3375294B2 (ja) 1998-12-17 2003-02-10 東京エレクトロン株式会社 処理装置、処理システムおよび該装置における清浄エアの供給方法
US6129954A (en) 1998-12-22 2000-10-10 General Electric Company Method for thermally spraying crack-free mullite coatings on ceramic-based substrates
US6607948B1 (en) 1998-12-24 2003-08-19 Kabushiki Kaisha Toshiba Method of manufacturing a substrate using an SiGe layer
US6496819B1 (en) 1998-12-28 2002-12-17 Oracle Corporation Rewriting a query in terms of a summary based on functional dependencies and join backs, and based on join derivability
KR100281094B1 (ko) 1998-12-30 2001-02-01 서평원 이동 통신 시스템에서 셀 탐색 방법
US6137240A (en) 1998-12-31 2000-10-24 Lumion Corporation Universal ballast control circuit
US6579805B1 (en) 1999-01-05 2003-06-17 Ronal Systems Corp. In situ chemical generator and method
KR100331544B1 (ko) 1999-01-18 2002-04-06 윤종용 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드
JP3119641B2 (ja) 1999-01-19 2000-12-25 九州日本電気株式会社 縦型熱処理装置
US6490493B1 (en) 1999-01-21 2002-12-03 Rosemount Inc. Industrial process device management software
US7217325B2 (en) 1999-01-22 2007-05-15 Semitool, Inc. System for processing a workpiece
TW455912B (en) 1999-01-22 2001-09-21 Sony Corp Method and apparatus for film deposition
JP2987148B1 (ja) 1999-01-26 1999-12-06 国際電気株式会社 基板処理装置
US6044860A (en) 1999-02-01 2000-04-04 Spx Corporation Adjustable lockout device for knife gate valves
US6374831B1 (en) 1999-02-04 2002-04-23 Applied Materials, Inc. Accelerated plasma clean
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
IT1308606B1 (it) 1999-02-12 2002-01-08 Lpe Spa Dispositivo per maneggiare substrati mediante un istema autolivellante a depressione in reattori epistassiali ad induzione con suscettore
DE10080457T1 (de) 1999-02-12 2001-04-26 Gelest Inc CVD-Abscheidung von Wolframnitrid
US6190037B1 (en) 1999-02-19 2001-02-20 Applied Materials, Inc. Non-intrusive, on-the-fly (OTF) temperature measurement and monitoring system
JP2000249058A (ja) 1999-02-26 2000-09-12 Ebara Corp トラップ装置
ES2197083T3 (es) 1999-03-03 2004-01-01 Widia Gmbh Pieza de corte para arrancar virutas de materiales metalicos con un revestimiento que contiene sulfuro de molibdeno y procedimiento para su fabricacion.
US6426125B1 (en) 1999-03-17 2002-07-30 General Electric Company Multilayer article and method of making by ARC plasma deposition
US6250250B1 (en) 1999-03-18 2001-06-26 Yuri Maishev Multiple-cell source of uniform plasma
JP3250154B2 (ja) 1999-03-31 2002-01-28 株式会社スーパーシリコン研究所 半導体ウエハ製造装置
JP3398936B2 (ja) 1999-04-09 2003-04-21 日本エー・エス・エム株式会社 半導体処理装置
US6263830B1 (en) 1999-04-12 2001-07-24 Matrix Integrated Systems, Inc. Microwave choke for remote plasma generator
TW465017B (en) 1999-04-13 2001-11-21 Applied Materials Inc A corrosion-resistant protective coating for an apparatus and method for processing a substrate
US6264467B1 (en) 1999-04-14 2001-07-24 Applied Materials, Inc. Micro grooved support surface for reducing substrate wear and slip formation
US6326597B1 (en) 1999-04-15 2001-12-04 Applied Materials, Inc. Temperature control system for process chamber
KR100428521B1 (ko) 1999-04-20 2004-04-29 도쿄 엘렉트론 가부시키가이샤 ＩＣ 제조에서의 ＰＥＣＶＤ－Ｔｉ 및 ＣＶＤ－ＴｉＮ 막의 단일 챔버 처리 방법
US6410433B1 (en) 1999-04-27 2002-06-25 Tokyo Electron Limited Thermal CVD of TaN films from tantalum halide precursors
US6265311B1 (en) 1999-04-27 2001-07-24 Tokyo Electron Limited PECVD of TaN films from tantalum halide precursors
JP3965258B2 (ja) 1999-04-30 2007-08-29 日本碍子株式会社 半導体製造装置用のセラミックス製ガス供給構造
US7588720B2 (en) 1999-04-30 2009-09-15 Tso3, Inc. Method and apparatus for ozone sterilization
KR100347379B1 (ko) 1999-05-01 2002-08-07 주식회사 피케이엘 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치
JP2000323487A (ja) 1999-05-14 2000-11-24 Tokyo Electron Ltd 枚葉式熱処理装置
JP3072989B1 (ja) 1999-05-14 2000-08-07 日本エー・エス・エム株式会社 半導体基板上に薄膜を形成する成膜装置における成膜方法
JP4294791B2 (ja) 1999-05-17 2009-07-15 アプライド マテリアルズ インコーポレイテッド 半導体製造装置
JP2000329447A (ja) 1999-05-17 2000-11-30 Matsushita Refrig Co Ltd 冷蔵庫および除霜用ヒーター
US6617553B2 (en) 1999-05-19 2003-09-09 Applied Materials, Inc. Multi-zone resistive heater
US6423949B1 (en) 1999-05-19 2002-07-23 Applied Materials, Inc. Multi-zone resistive heater
US6440261B1 (en) 1999-05-25 2002-08-27 Applied Materials, Inc. Dual buffer chamber cluster tool for semiconductor wafer processing
US6119710A (en) 1999-05-26 2000-09-19 Cyber Instrument Technologies Llc Method for wide range gas flow system with real time flow measurement and correction
WO2000074117A1 (en) 1999-05-27 2000-12-07 Matrix Integrated Systems, Inc. Rapid heating and cooling of workpiece chucks
EP1109210A1 (en) 1999-05-28 2001-06-20 Tokyo Electron Limited Ozone treatment device of semiconductor process system
US20020033183A1 (en) 1999-05-29 2002-03-21 Sheng Sun Method and apparatus for enhanced chamber cleaning
JP3668079B2 (ja) 1999-05-31 2005-07-06 忠弘 大見 プラズマプロセス装置
JP3940546B2 (ja) 1999-06-07 2007-07-04 株式会社東芝 パターン形成方法およびパターン形成材料
US6656281B1 (en) 1999-06-09 2003-12-02 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
US6555183B2 (en) 1999-06-11 2003-04-29 Applied Materials, Inc. Plasma treatment of a titanium nitride film formed by chemical vapor deposition
US6548402B2 (en) 1999-06-11 2003-04-15 Applied Materials, Inc. Method of depositing a thick titanium nitride film
US6281098B1 (en) 1999-06-15 2001-08-28 Midwest Research Institute Process for Polycrystalline film silicon growth
JP2001004062A (ja) 1999-06-17 2001-01-09 Benkan Corp 流量制御用バルブ
US6821571B2 (en) 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
US6528752B1 (en) 1999-06-18 2003-03-04 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
DE60035948T2 (de) 1999-06-19 2008-05-15 Asm Genitech Korea Ltd. Chemischer abscheidungsreaktor und dessen verwendung für die abscheidung eines dünnen films
US6812157B1 (en) 1999-06-24 2004-11-02 Prasad Narhar Gadgil Apparatus for atomic layer chemical vapor deposition
FR2795745B1 (fr) 1999-06-30 2001-08-03 Saint Gobain Vitrage Procede de depot d'une couche a base de tungstene et/ou de molybdene sur un substrat verrier, ceramique ou vitroceramique, et substrat ainsi revetu
US6587108B1 (en) 1999-07-01 2003-07-01 Honeywell Inc. Multivariable process matrix display and methods regarding same
JP3252835B2 (ja) 1999-07-02 2002-02-04 松下電器産業株式会社 半導体装置およびその製造方法
US6151446A (en) 1999-07-06 2000-11-21 Applied Materials, Inc. Apparatus and method for thermally processing substrates including a processor using multiple detection signals
US6214121B1 (en) 1999-07-07 2001-04-10 Applied Materials, Inc. Pedestal with a thermally controlled platen
JP2001023955A (ja) 1999-07-07 2001-01-26 Mitsubishi Electric Corp プラズマ処理装置
US6238734B1 (en) 1999-07-08 2001-05-29 Air Products And Chemicals, Inc. Liquid precursor mixtures for deposition of multicomponent metal containing materials
JP2001023872A (ja) 1999-07-09 2001-01-26 Hitachi Ltd 半導体基板処理装置
US6375749B1 (en) 1999-07-14 2002-04-23 Seh America, Inc. Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth
US6368988B1 (en) 1999-07-16 2002-04-09 Micron Technology, Inc. Combined gate cap or digit line and spacer deposition using HDP
FI110311B (fi) 1999-07-20 2002-12-31 Asm Microchemistry Oy Menetelmä ja laitteisto aineiden poistamiseksi kaasuista
JP3701148B2 (ja) 1999-07-28 2005-09-28 株式会社日立製作所 コンテンツの配信方法
US6867859B1 (en) 1999-08-03 2005-03-15 Lightwind Corporation Inductively coupled plasma spectrometer for process diagnostics and control
EP1077477B1 (en) 1999-08-17 2008-12-17 Applied Materials, Inc. Surface treatment of C-doped SiO2 film to enhance film stability during O2 ashing
EP1077274A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes
US6602806B1 (en) 1999-08-17 2003-08-05 Applied Materials, Inc. Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film
EP1077479A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Post-deposition treatment to enchance properties of Si-O-C low K film
KR100557594B1 (ko) 1999-08-17 2006-03-10 주식회사 하이닉스반도체 노광후 지연 안정성을 갖는 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 함유한 포토레지스트 조성물
US6579833B1 (en) 1999-09-01 2003-06-17 The Board Of Trustees Of The University Of Illinois Process for converting a metal carbide to carbon by etching in halogens
JP2001077088A (ja) 1999-09-02 2001-03-23 Tokyo Electron Ltd プラズマ処理装置
US6645345B2 (en) 1999-09-02 2003-11-11 Micron Technology, Inc. Wafer planarization using a uniform layer of material and method and apparatus for forming uniform layer of material used in semiconductor processing
US6238636B1 (en) 1999-09-03 2001-05-29 Air Liquide America Corporation Process and systems for purification of boron trichloride
US6511539B1 (en) 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US7894474B1 (en) 1999-09-10 2011-02-22 Koninklijke Philips Electronics N.V. Remote control of an electronic device through downloading of a control interface of the electronic device in a mobile station
US6355153B1 (en) 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
US6451157B1 (en) 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6420792B1 (en) 1999-09-24 2002-07-16 Texas Instruments Incorporated Semiconductor wafer edge marking
US6293700B1 (en) 1999-09-24 2001-09-25 Fluke Corporation Calibrated isothermal assembly for a thermocouple thermometer
US7066703B2 (en) 1999-09-29 2006-06-27 Tokyo Electron Limited Chuck transport method and system
US6740853B1 (en) 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
US6296710B1 (en) 1999-10-06 2001-10-02 Advanced Micro Devices, Inc. Multi-port gas injector for a vertical furnace used in semiconductor processing
US7010580B1 (en) 1999-10-08 2006-03-07 Agile Software Corp. Method and apparatus for exchanging data in a platform independent manner
US6503758B1 (en) 1999-10-12 2003-01-07 President & Fellows Of Harvard College Systems and methods for measuring nitrate levels
CN1192222C (zh) 1999-10-13 2005-03-09 德士古发展公司 蓝宝石增强热电偶保护管
US6500487B1 (en) 1999-10-18 2002-12-31 Advanced Technology Materials, Inc Abatement of effluent from chemical vapor deposition processes using ligand exchange resistant metal-organic precursor solutions
US6391385B1 (en) 1999-10-18 2002-05-21 Advanced Technology Materials, Inc. Method of abating of effluents from chemical vapor deposition processes using organometallic source reagents
US6203613B1 (en) 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
US6287913B1 (en) 1999-10-26 2001-09-11 International Business Machines Corporation Double polysilicon process for providing single chip high performance logic and compact embedded memory structure
KR100340716B1 (ko) 1999-10-29 2002-06-20 윤종용 실리콘 질화막 형성방법
KR20010045418A (ko) 1999-11-05 2001-06-05 박종섭 신규한 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물
JP3551867B2 (ja) 1999-11-09 2004-08-11 信越化学工業株式会社 シリコンフォーカスリング及びその製造方法
KR100547248B1 (ko) 1999-11-12 2006-02-01 주식회사 하이닉스반도체 알루미나를 사용한 반도체 소자의 게이트 절연막 형성방법
JP4209057B2 (ja) 1999-12-01 2009-01-14 東京エレクトロン株式会社 セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法
KR100369324B1 (ko) 1999-12-02 2003-01-24 한국전자통신연구원 평면형 마이크로 공동구조 제조 방법
EP1107512A1 (en) 1999-12-03 2001-06-13 Sony International (Europe) GmbH Communication device and software for operating multimedia applications
FI118804B (fi) 1999-12-03 2008-03-31 Asm Int Menetelmä oksidikalvojen kasvattamiseksi
US6589352B1 (en) 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
US7838842B2 (en) 1999-12-13 2010-11-23 Semequip, Inc. Dual mode ion source for ion implantation
TW521295B (en) 1999-12-13 2003-02-21 Semequip Inc Ion implantation ion source, system and method
US6452338B1 (en) 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
JP3810604B2 (ja) 1999-12-21 2006-08-16 Ｓｍｃ株式会社 ゲートバルブ
JP2001176952A (ja) 1999-12-21 2001-06-29 Toshiba Mach Co Ltd ウェーハ位置ずれ検出装置
US6673198B1 (en) 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6503330B1 (en) 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
WO2001050349A1 (en) 1999-12-30 2001-07-12 Rutgers, The State University Of New Jersey Electronic document customization and transformation utilizing user feedback
US6335049B1 (en) 2000-01-03 2002-01-01 Micron Technology, Inc. Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor
US6576062B2 (en) 2000-01-06 2003-06-10 Tokyo Electron Limited Film forming apparatus and film forming method
KR100767762B1 (ko) 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
US6541367B1 (en) 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
TW473792B (en) 2000-01-20 2002-01-21 Ngk Insulators Ltd Electrostatic chuck
JP2001203211A (ja) 2000-01-20 2001-07-27 Hitachi Kokusai Electric Inc 水素アニール処理方法及びその装置
JP2001207265A (ja) 2000-01-27 2001-07-31 Kubota Corp 成膜装置
JP4384770B2 (ja) 2000-01-27 2009-12-16 株式会社日立国際電気 基板処理装置
JP2001207268A (ja) 2000-01-27 2001-07-31 Kubota Corp 成膜装置
US6475930B1 (en) 2000-01-31 2002-11-05 Motorola, Inc. UV cure process and tool for low k film formation
US6191399B1 (en) 2000-02-01 2001-02-20 Asm America, Inc. System of controlling the temperature of a processing chamber
US6436819B1 (en) 2000-02-01 2002-08-20 Applied Materials, Inc. Nitrogen treatment of a metal nitride/metal stack
JP4174941B2 (ja) 2000-02-03 2008-11-05 株式会社デンソー 薄膜製造方法及び薄膜製造装置
US6521046B2 (en) 2000-02-04 2003-02-18 Kabushiki Kaisha Kobe Seiko Sho Chamber material made of Al alloy and heater block
US6372583B1 (en) 2000-02-09 2002-04-16 Intel Corporation Process for making semiconductor device with epitaxially grown source and drain
US6407435B1 (en) 2000-02-11 2002-06-18 Sharp Laboratories Of America, Inc. Multilayer dielectric stack and method
US20020009119A1 (en) 2000-02-11 2002-01-24 Matthew William T. Environmental heat stress monitor
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
KR100520188B1 (ko) 2000-02-18 2005-10-10 주식회사 하이닉스반도체 부분적으로 가교화된 2층 포토레지스트용 중합체
TW476996B (en) 2000-02-28 2002-02-21 Mitsubishi Material Silicon Semiconductor manufacturing method and semiconductor manufacturing apparatus
US6846711B2 (en) 2000-03-02 2005-01-25 Tokyo Electron Limited Method of making a metal oxide capacitor, including a barrier film
US7419903B2 (en) 2000-03-07 2008-09-02 Asm International N.V. Thin films
EP1266054B1 (en) 2000-03-07 2006-12-20 Asm International N.V. Graded thin films
JP4054159B2 (ja) 2000-03-08 2008-02-27 東京エレクトロン株式会社 基板処理方法及びその装置
AU4351601A (en) 2000-03-09 2001-09-17 Semix Inc Wafer processing apparatus and method
AU2001247336B2 (en) 2000-03-10 2006-02-02 Smiths Detection, Inc. Control for an industrial process using one or more multidimensional variables
JP3438696B2 (ja) 2000-03-13 2003-08-18 松下電器産業株式会社 プラズマ処理方法及び装置
JP2001332609A (ja) 2000-03-13 2001-11-30 Nikon Corp 基板保持装置及び露光装置
US6506009B1 (en) 2000-03-16 2003-01-14 Applied Materials, Inc. Apparatus for storing and moving a cassette
US6913796B2 (en) 2000-03-20 2005-07-05 Axcelis Technologies, Inc. Plasma curing process for porous low-k materials
US6558755B2 (en) 2000-03-20 2003-05-06 Dow Corning Corporation Plasma curing process for porous silica thin film
US6576300B1 (en) 2000-03-20 2003-06-10 Dow Corning Corporation High modulus, low dielectric constant coatings
US6759098B2 (en) 2000-03-20 2004-07-06 Axcelis Technologies, Inc. Plasma curing of MSQ-based porous low-k film materials
US6598559B1 (en) 2000-03-24 2003-07-29 Applied Materials, Inc. Temperature controlled chamber
AT412302B (de) 2000-03-28 2004-12-27 Hoerbiger Ventilwerke Gmbh Selbsttätiges ventil
JP3676983B2 (ja) 2000-03-29 2005-07-27 株式会社日立国際電気 半導体製造方法、基板処理方法、及び半導体製造装置
JP2001342570A (ja) 2000-03-30 2001-12-14 Hitachi Kokusai Electric Inc 半導体装置の製造方法および半導体製造装置
JP2003529926A (ja) 2000-03-30 2003-10-07 東京エレクトロン株式会社 プラズマ処理システム内への調整可能なガス注入のための方法及び装置
JP2001345263A (ja) 2000-03-31 2001-12-14 Nikon Corp 露光装置及び露光方法、並びにデバイス製造方法
JP4281208B2 (ja) 2000-04-04 2009-06-17 ソニー株式会社 ロボット遠隔制御システム
US7166165B2 (en) 2000-04-06 2007-01-23 Asm America, Inc. Barrier coating for vitreous materials
US7011710B2 (en) 2000-04-10 2006-03-14 Applied Materials Inc. Concentration profile on demand gas delivery system (individual divert delivery system)
FI117979B (fi) 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
FI117980B (fi) 2000-04-14 2007-05-15 Asm Int Menetelmä ohutkalvon kasvattamiseksi alustalle
JP4813737B2 (ja) 2000-04-17 2011-11-09 マットソン テクノロジー インコーポレイテッド 窒化ケイ素フィルムを形成するための超薄オキシニトリドのｕｖ前処理法
US6641350B2 (en) 2000-04-17 2003-11-04 Hitachi Kokusai Electric Inc. Dual loading port semiconductor processing equipment
TW503449B (en) 2000-04-18 2002-09-21 Ngk Insulators Ltd Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members
US6984591B1 (en) 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
US6329297B1 (en) 2000-04-21 2001-12-11 Applied Materials, Inc. Dilute remote plasma clean
US6502530B1 (en) 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
US6635117B1 (en) 2000-04-26 2003-10-21 Axcelis Technologies, Inc. Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
JP2001313329A (ja) 2000-04-28 2001-11-09 Applied Materials Inc 半導体製造装置におけるウェハ支持装置
US6387207B1 (en) 2000-04-28 2002-05-14 Applied Materials, Inc. Integration of remote plasma generator with semiconductor processing chamber
US6952656B1 (en) 2000-04-28 2005-10-04 Applied Materials, Inc. Wafer fabrication data acquisition and management systems
US7141768B2 (en) 2000-04-28 2006-11-28 Nexicor, Llc Fastening device
KR100367662B1 (ko) 2000-05-02 2003-01-10 주식회사 셈테크놀러지 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치
DE10021871A1 (de) 2000-05-05 2001-11-15 Infineon Technologies Ag Verfahren zum Herstellen einer Barriereschicht in einem elektronischen Bauelement und Verfahren zum Herstellen eines elektronischen Bauelements mit einer Barriereschicht
JP2001319921A (ja) 2000-05-09 2001-11-16 Canon Inc プロセスチャンバ
US20020195056A1 (en) 2000-05-12 2002-12-26 Gurtej Sandhu Versatile atomic layer deposition apparatus
US6553932B2 (en) 2000-05-12 2003-04-29 Applied Materials, Inc. Reduction of plasma edge effect on plasma enhanced CVD processes
US20020078893A1 (en) 2000-05-18 2002-06-27 Applied Materials , Inc. Plasma enhanced chemical processing reactor and method
JP4449226B2 (ja) 2000-05-22 2010-04-14 東京エレクトロン株式会社 金属酸化膜の改質方法、金属酸化膜の成膜方法及び熱処理装置
US6559026B1 (en) 2000-05-25 2003-05-06 Applied Materials, Inc Trench fill with HDP-CVD process including coupled high power density plasma deposition
JP3448737B2 (ja) 2000-05-25 2003-09-22 住友重機械工業株式会社 ウエハーチャック用冷却板及びウエハーチャック
US6558517B2 (en) 2000-05-26 2003-05-06 Micron Technology, Inc. Physical vapor deposition methods
TW578214B (en) 2000-05-29 2004-03-01 Tokyo Electron Ltd Method of forming oxynitride film or the like and system for carrying out the same
US6645585B2 (en) 2000-05-30 2003-11-11 Kyocera Corporation Container for treating with corrosive-gas and plasma and method for manufacturing the same
EP1160838B1 (en) 2000-05-31 2007-12-05 Tokyo Electron Limited Heat treatment system and method
US6998097B1 (en) 2000-06-07 2006-02-14 Tegal Corporation High pressure chemical vapor trapping system
WO2001099166A1 (en) 2000-06-08 2001-12-27 Genitech Inc. Thin film forming method
USD455024S1 (en) 2000-06-09 2002-04-02 Levenger Company Portable writing surface
US6863019B2 (en) 2000-06-13 2005-03-08 Applied Materials, Inc. Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
KR100406173B1 (ko) 2000-06-13 2003-11-19 주식회사 하이닉스반도체 촉매 분사 수단을 구비한 히터 블록
JP2004503934A (ja) 2000-06-15 2004-02-05 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 基板カセットのホルダー及び該ホルダーを備えたデバイス
US6461435B1 (en) 2000-06-22 2002-10-08 Applied Materials, Inc. Showerhead with reduced contact area
US6346419B1 (en) 2000-06-26 2002-02-12 The United States Of America As Represented By The Department Of Commerce Photolysis system for fast-response NO2 measurements and method therefor
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
JP4371543B2 (ja) 2000-06-29 2009-11-25 日本電気株式会社 リモートプラズマｃｖｄ装置及び膜形成方法
KR100546138B1 (ko) 2000-06-30 2006-01-24 주식회사 하이닉스반도체 신규한 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물
US6632322B1 (en) 2000-06-30 2003-10-14 Lam Research Corporation Switched uniformity control
KR100467366B1 (ko) 2000-06-30 2005-01-24 주식회사 하이닉스반도체 원자층 증착법을 이용한 지르코늄산화막 형성방법
US6874480B1 (en) 2000-07-03 2005-04-05 Combustion Dynamics Corp. Flow meter
JP3497450B2 (ja) 2000-07-06 2004-02-16 東京エレクトロン株式会社 バッチ式熱処理装置及びその制御方法
KR100729472B1 (ko) 2000-07-06 2007-06-15 브룩스 오토메이션, 인크. 레티클 저장 및 회수 시스템
US6835278B2 (en) 2000-07-07 2004-12-28 Mattson Technology Inc. Systems and methods for remote plasma clean
JP3485896B2 (ja) 2000-07-11 2004-01-13 東京エレクトロン株式会社 プラズマ処理装置
JP2002164342A (ja) 2000-07-21 2002-06-07 Canon Sales Co Inc 半導体装置及びその製造方法
JP4357715B2 (ja) * 2000-07-24 2009-11-04 東京エレクトロン株式会社 熱処理装置の温度校正方法
AU2001288225A1 (en) 2000-07-24 2002-02-05 The University Of Maryland College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
US6450117B1 (en) 2000-08-07 2002-09-17 Applied Materials, Inc. Directing a flow of gas in a substrate processing chamber
US6712929B1 (en) 2000-08-08 2004-03-30 Lam Research Corporation Deformation reduction at the main chamber
US7166524B2 (en) 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7465478B2 (en) 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
US20020136214A1 (en) 2000-08-14 2002-09-26 Consumer Direct Link Pervasive computing network architecture
US6437290B1 (en) 2000-08-17 2002-08-20 Tokyo Electron Limited Heat treatment apparatus having a thin light-transmitting window
US6451692B1 (en) 2000-08-18 2002-09-17 Micron Technology, Inc. Preheating of chemical vapor deposition precursors
AU2001278749A1 (en) 2000-08-18 2002-03-04 Tokyo Electron Limited Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof
JP4150493B2 (ja) 2000-08-22 2008-09-17 株式会社東芝 パターン描画装置における温度測定方法
JP4365017B2 (ja) 2000-08-23 2009-11-18 東京エレクトロン株式会社 熱処理装置の降温レート制御方法および熱処理装置
US6566278B1 (en) 2000-08-24 2003-05-20 Applied Materials Inc. Method for densification of CVD carbon-doped silicon oxide films through UV irradiation
US6494998B1 (en) 2000-08-30 2002-12-17 Tokyo Electron Limited Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element
US6878906B2 (en) 2000-08-30 2005-04-12 Ibiden Co., Ltd. Ceramic heater for semiconductor manufacturing and inspecting equipment
US6784108B1 (en) 2000-08-31 2004-08-31 Micron Technology, Inc. Gas pulsing for etch profile control
KR20020019414A (ko) 2000-09-05 2002-03-12 엔도 마코토 기판 처리 장치 및 기판 처리 장치를 이용한 반도체디바이스 제조 방법
USD449873S1 (en) 2000-09-22 2001-10-30 James Bronson Garbage disposal strainer and splash guard
JP4232330B2 (ja) 2000-09-22 2009-03-04 東京エレクトロン株式会社 励起ガス形成装置、処理装置及び処理方法
JP3929261B2 (ja) 2000-09-25 2007-06-13 株式会社日立国際電気 基板処理装置および基板処理方法
US6494065B2 (en) 2000-09-26 2002-12-17 Babbitt Steam Specialty Company Valve lockout/tag out system
US6492625B1 (en) 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
US6632068B2 (en) 2000-09-27 2003-10-14 Asm International N.V. Wafer handling system
EP1327010B1 (en) 2000-09-28 2013-12-04 President and Fellows of Harvard College Vapor deposition of silicates
US6370796B1 (en) 2000-09-29 2002-04-16 Sony Corporation Heater block cooling system for wafer processing apparatus
AU146328S (en) 2000-09-29 2001-12-18 American Standard Int Inc Faucet
US6578893B2 (en) 2000-10-02 2003-06-17 Ajs Automation, Inc. Apparatus and methods for handling semiconductor wafers
JP2002110570A (ja) 2000-10-04 2002-04-12 Asm Japan Kk 半導体製造装置用ガスラインシステム
US6745095B1 (en) 2000-10-04 2004-06-01 Applied Materials, Inc. Detection of process endpoint through monitoring fluctuation of output data
US6660660B2 (en) 2000-10-10 2003-12-09 Asm International, Nv. Methods for making a dielectric stack in an integrated circuit
US7204887B2 (en) 2000-10-16 2007-04-17 Nippon Steel Corporation Wafer holding, wafer support member, wafer boat and heat treatment furnace
US6395650B1 (en) 2000-10-23 2002-05-28 International Business Machines Corporation Methods for forming metal oxide layers with enhanced purity
JP4156788B2 (ja) 2000-10-23 2008-09-24 日本碍子株式会社 半導体製造装置用サセプター
TW548239B (en) 2000-10-23 2003-08-21 Asm Microchemistry Oy Process for producing aluminium oxide films at low temperatures
US6688784B1 (en) 2000-10-25 2004-02-10 Advanced Micro Devices, Inc. Parallel plate development with multiple holes in top plate for control of developer flow and pressure
US6824665B2 (en) 2000-10-25 2004-11-30 Shipley Company, L.L.C. Seed layer deposition
JP3408527B2 (ja) 2000-10-26 2003-05-19 松下電器産業株式会社 半導体装置の製造方法
US6445574B1 (en) 2000-10-30 2002-09-03 Motorola, Inc. Electronic device
US6498091B1 (en) 2000-11-01 2002-12-24 Applied Materials, Inc. Method of using a barrier sputter reactor to remove an underlying barrier layer
US7032614B2 (en) 2000-11-03 2006-04-25 Applied Materials, Inc. Facilities connection box for pre-facilitation of wafer fabrication equipment
US6649540B2 (en) 2000-11-09 2003-11-18 The Boc Group, Inc. Organosilane CVD precursors and their use for making organosilane polymer low-k dielectric film
JP2002158178A (ja) 2000-11-21 2002-05-31 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US6689220B1 (en) 2000-11-22 2004-02-10 Simplus Systems Corporation Plasma enhanced pulsed layer deposition
US6613695B2 (en) 2000-11-24 2003-09-02 Asm America, Inc. Surface preparation prior to deposition
US20020064592A1 (en) 2000-11-29 2002-05-30 Madhav Datta Electroless method of seed layer depostion, repair, and fabrication of Cu interconnects
KR100688484B1 (ko) 2000-11-30 2007-02-28 삼성전자주식회사 활성화 산소를 이용하여 기판을 처리하는 장치 및 그 방법
JP3610900B2 (ja) 2000-11-30 2005-01-19 東京エレクトロン株式会社 熱処理装置
US20020069222A1 (en) 2000-12-01 2002-06-06 Wiznet, Inc. System and method for placing active tags in HTML document
US6913152B2 (en) 2000-12-04 2005-07-05 Peter Zuk, Jr. Disposable vacuum filtration apparatus capable of detecting microorganisms and particulates in liquid samples
JP3650025B2 (ja) 2000-12-04 2005-05-18 シャープ株式会社 プラズマプロセス装置
JP3939101B2 (ja) 2000-12-04 2007-07-04 株式会社荏原製作所 基板搬送方法および基板搬送容器
JP2002237375A (ja) 2000-12-05 2002-08-23 Ibiden Co Ltd 半導体製造・検査装置用セラミック基板およびその製造方法
EP1351283A4 (en) 2000-12-05 2006-01-25 Tokyo Electron Ltd METHOD AND DEVICE FOR TREATING AN ARTICLE TO BE TREATED
KR100385947B1 (ko) 2000-12-06 2003-06-02 삼성전자주식회사 원자층 증착 방법에 의한 박막 형성 방법
US6878402B2 (en) 2000-12-06 2005-04-12 Novellus Systems, Inc. Method and apparatus for improved temperature control in atomic layer deposition
US6428859B1 (en) 2000-12-06 2002-08-06 Angstron Systems, Inc. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6930041B2 (en) 2000-12-07 2005-08-16 Micron Technology, Inc. Photo-assisted method for semiconductor fabrication
US6576564B2 (en) 2000-12-07 2003-06-10 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method
US6413321B1 (en) 2000-12-07 2002-07-02 Applied Materials, Inc. Method and apparatus for reducing particle contamination on wafer backside during CVD process
TWI313059B (zh) 2000-12-08 2009-08-01 Sony Corporatio
AU2002221122A1 (en) 2000-12-12 2002-06-24 Tokyo Electron Limited Thin film forming method and thin film forming device
US6814096B2 (en) 2000-12-15 2004-11-09 Nor-Cal Products, Inc. Pressure controller and method
US20020076507A1 (en) 2000-12-15 2002-06-20 Chiang Tony P. Process sequence for atomic layer deposition
US6800173B2 (en) 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
US6641673B2 (en) 2000-12-20 2003-11-04 General Electric Company Fluid injector for and method of prolonged delivery and distribution of reagents into plasma
US7015422B2 (en) 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US6544906B2 (en) 2000-12-21 2003-04-08 Texas Instruments Incorporated Annealing of high-k dielectric materials
US20020152244A1 (en) 2000-12-22 2002-10-17 International Business Machines Corporation Method and apparatus to dynamically create a customized user interface based on a document type definition
US20020151327A1 (en) 2000-12-22 2002-10-17 David Levitt Program selector and guide system and method
JP5068402B2 (ja) 2000-12-28 2012-11-07 公益財団法人国際科学振興財団 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法
US6398184B1 (en) 2000-12-29 2002-06-04 General Signal Corporation Lock device and lock method for knife gate valves
US6537429B2 (en) 2000-12-29 2003-03-25 Lam Research Corporation Diamond coatings on reactor wall and method of manufacturing thereof
US6533910B2 (en) 2000-12-29 2003-03-18 Lam Research Corporation Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
US7172497B2 (en) 2001-01-05 2007-02-06 Asm Nutool, Inc. Fabrication of semiconductor interconnect structures
US6572923B2 (en) 2001-01-12 2003-06-03 The Boc Group, Inc. Asymmetric organocyclosiloxanes and their use for making organosilicon polymer low-k dielectric film
JP4633269B2 (ja) 2001-01-15 2011-02-16 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US6583048B2 (en) 2001-01-17 2003-06-24 Air Products And Chemicals, Inc. Organosilicon precursors for interlayer dielectric films with low dielectric constants
US7087482B2 (en) 2001-01-19 2006-08-08 Samsung Electronics Co., Ltd. Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same
KR20070116696A (ko) 2001-01-22 2007-12-10 동경 엘렉트론 주식회사 전자 디바이스 재료의 제조 방법 및 플라즈마 처리 방법
JP4644943B2 (ja) 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
KR20060009395A (ko) 2001-01-25 2006-01-31 동경 엘렉트론 주식회사 기판의 처리 방법
JP4429300B2 (ja) 2001-01-25 2010-03-10 東京エレクトロン株式会社 電子デバイス材料の製造方法
US6660662B2 (en) 2001-01-26 2003-12-09 Applied Materials, Inc. Method of reducing plasma charge damage for plasma processes
KR20020064028A (ko) 2001-01-31 2002-08-07 한빛 세마텍(주) 펄스형 자외선조사에 의한 세정 및 표면처리 장치
US7299202B2 (en) 2001-02-07 2007-11-20 Exalt Solutions, Inc. Intelligent multimedia e-catalog
JP3626933B2 (ja) 2001-02-08 2005-03-09 東京エレクトロン株式会社 基板載置台の製造方法
JP2005033221A (ja) 2001-02-08 2005-02-03 Tokyo Electron Ltd 基板載置台および処理装置
US6589868B2 (en) 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
US20020108670A1 (en) 2001-02-12 2002-08-15 Baker John Eric High purity chemical container with external level sensor and removable dip tube
KR101050377B1 (ko) 2001-02-12 2011-07-20 에이에스엠 아메리카, 인코포레이티드 반도체 박막 증착을 위한 개선된 공정
US7072061B2 (en) 2001-02-13 2006-07-04 Ariba, Inc. Method and system for extracting information from RFQ documents and compressing RFQ files into a common RFQ file type
US6613656B2 (en) 2001-02-13 2003-09-02 Micron Technology, Inc. Sequential pulse deposition
US6632478B2 (en) 2001-02-22 2003-10-14 Applied Materials, Inc. Process for forming a low dielectric constant carbon-containing film
KR100410991B1 (ko) 2001-02-22 2003-12-18 삼성전자주식회사 반도체 제조장치의 로드포트
JP3494435B2 (ja) 2001-02-27 2004-02-09 東京エレクトロン株式会社 基板処理装置
TW544775B (en) 2001-02-28 2003-08-01 Japan Pionics Chemical vapor deposition apparatus and chemical vapor deposition method
US6852167B2 (en) 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US20020123237A1 (en) 2001-03-05 2002-09-05 Tue Nguyen Plasma pulse semiconductor processing system and method
JP4487135B2 (ja) 2001-03-05 2010-06-23 東京エレクトロン株式会社 流体制御装置
US7563715B2 (en) 2005-12-05 2009-07-21 Asm International N.V. Method of producing thin films
US6939579B2 (en) 2001-03-07 2005-09-06 Asm International N.V. ALD reactor and method with controlled wall temperature
US6447651B1 (en) 2001-03-07 2002-09-10 Applied Materials, Inc. High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers
US7111232B1 (en) 2001-03-07 2006-09-19 Thomas Layne Bascom Method and system for making document objects available to users of a network
US7186648B1 (en) 2001-03-13 2007-03-06 Novellus Systems, Inc. Barrier first method for single damascene trench applications
JP3912993B2 (ja) 2001-03-26 2007-05-09 株式会社荏原製作所 中性粒子ビーム処理装置
JP4727057B2 (ja) 2001-03-28 2011-07-20 忠弘 大見 プラズマ処理装置
US6716571B2 (en) 2001-03-28 2004-04-06 Advanced Micro Devices, Inc. Selective photoresist hardening to facilitate lateral trimming
US6723654B2 (en) 2001-03-30 2004-04-20 Taiwan Semiconductor Manufacturing Co., Ltd Method and apparatus for in-situ descum/hot bake/dry etch photoresist/polyimide layer
TW540093B (en) 2001-04-05 2003-07-01 Angstron Systems Inc Atomic layer deposition system and method
US6902622B2 (en) 2001-04-12 2005-06-07 Mattson Technology, Inc. Systems and methods for epitaxially depositing films on a semiconductor substrate
US6448192B1 (en) 2001-04-16 2002-09-10 Motorola, Inc. Method for forming a high dielectric constant material
US6521295B1 (en) 2001-04-17 2003-02-18 Pilkington North America, Inc. Chemical vapor deposition of antimony-doped metal oxide and the coated article made thereby
US6482331B2 (en) 2001-04-18 2002-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing contamination in a plasma process chamber
JP2002317287A (ja) 2001-04-18 2002-10-31 Permelec Electrode Ltd 過酸化水素製造用電解槽及び過酸化水素製造方法
US7125783B2 (en) 2001-04-18 2006-10-24 Integrated Device Technology, Inc. Dielectric anti-reflective coating surface treatment to prevent defect generation in associated wet clean
TW538327B (en) 2001-04-24 2003-06-21 Unit Instr Inc System and method for a mass flow controller
KR100798179B1 (ko) 2001-04-27 2008-01-24 교세라 가부시키가이샤 웨이퍼 가열장치
US20030019428A1 (en) 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
US6847014B1 (en) 2001-04-30 2005-01-25 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US6528430B2 (en) 2001-05-01 2003-03-04 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing Si2C16 and NH3
US6864041B2 (en) 2001-05-02 2005-03-08 International Business Machines Corporation Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching
US6627268B1 (en) 2001-05-03 2003-09-30 Novellus Systems, Inc. Sequential ion, UV, and electron induced chemical vapor deposition
US6602800B2 (en) 2001-05-09 2003-08-05 Asm Japan K.K. Apparatus for forming thin film on semiconductor substrate by plasma reaction
KR20020086763A (ko) 2001-05-10 2002-11-20 주식회사 엘지이아이 플라즈마를 이용한 연속중합장치용 열전대
US6596653B2 (en) 2001-05-11 2003-07-22 Applied Materials, Inc. Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
JP2003053688A (ja) 2001-05-15 2003-02-26 Fanuc Robotics North America Inc 教示ペンダントを有するロボット・システム
DE10156441A1 (de) 2001-05-18 2002-11-21 Mattson Thermal Products Gmbh Vorrichtung zur Aufnahme von scheibenförmigen Objekten und Vorrichtung zur Handhabung von Objekten
JP2002343790A (ja) 2001-05-21 2002-11-29 Nec Corp 金属化合物薄膜の気相堆積方法及び半導体装置の製造方法
US6528767B2 (en) 2001-05-22 2003-03-04 Applied Materials, Inc. Pre-heating and load lock pedestal material for high temperature CVD liquid crystal and flat panel display applications
US7262125B2 (en) 2001-05-22 2007-08-28 Novellus Systems, Inc. Method of forming low-resistivity tungsten interconnects
US7037574B2 (en) 2001-05-23 2006-05-02 Veeco Instruments, Inc. Atomic layer deposition for fabricating thin films
US6810886B2 (en) 2001-05-24 2004-11-02 Applied Materials, Inc. Chamber cleaning via rapid thermal process during a cleaning period
US7159597B2 (en) 2001-06-01 2007-01-09 Applied Materials, Inc. Multistep remote plasma clean process
US6758909B2 (en) 2001-06-05 2004-07-06 Honeywell International Inc. Gas port sealing for CVD/CVI furnace hearth plates
GB0113735D0 (en) 2001-06-05 2001-07-25 Holset Engineering Co Mixing fluid streams
US6472266B1 (en) 2001-06-18 2002-10-29 Taiwan Semiconductor Manufacturing Company Method to reduce bit line capacitance in cub drams
US6955928B1 (en) 2001-06-18 2005-10-18 Advanced Micro Devices, Inc. Closed loop residual gas analyzer process control technique
US6391803B1 (en) 2001-06-20 2002-05-21 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6514313B1 (en) 2001-06-22 2003-02-04 Aeronex, Inc. Gas purification system and method
US20030002562A1 (en) 2001-06-27 2003-01-02 Yerlikaya Y. Denis Temperature probe adapter
US6420279B1 (en) 2001-06-28 2002-07-16 Sharp Laboratories Of America, Inc. Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate
KR20030001939A (ko) 2001-06-28 2003-01-08 동부전자 주식회사 반도체소자의 장벽층 형성 방법 및 장치
US20030003696A1 (en) 2001-06-29 2003-01-02 Avgerinos Gelatos Method and apparatus for tuning a plurality of processing chambers
US20030000647A1 (en) 2001-06-29 2003-01-02 Applied Materials, Inc. Substrate processing chamber
JP3708031B2 (ja) 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
TW539822B (en) 2001-07-03 2003-07-01 Asm Inc Source chemical container assembly
DE10133013C2 (de) 2001-07-06 2003-07-03 Karlsruhe Forschzent Verschluss für Hohlräume oder Durchführungen
US7179752B2 (en) 2001-07-10 2007-02-20 Tokyo Electron Limited Dry etching method
US6746308B1 (en) 2001-07-11 2004-06-08 Advanced Micro Devices, Inc. Dynamic lot allocation based upon wafer state characteristics, and system for accomplishing same
US20030017266A1 (en) 2001-07-13 2003-01-23 Cem Basceri Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
US6868856B2 (en) 2001-07-13 2005-03-22 Applied Materials, Inc. Enhanced remote plasma cleaning
US6838122B2 (en) 2001-07-13 2005-01-04 Micron Technology, Inc. Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers
KR100400044B1 (ko) 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US20030017268A1 (en) 2001-07-18 2003-01-23 Applied Materials, Inc. .method of cvd titanium nitride film deposition for increased titanium nitride film uniformity
JP3926588B2 (ja) 2001-07-19 2007-06-06 キヤノンマーケティングジャパン株式会社 半導体装置の製造方法
US6677254B2 (en) 2001-07-23 2004-01-13 Applied Materials, Inc. Processes for making a barrier between a dielectric and a conductor and products produced therefrom
JP2003035574A (ja) 2001-07-23 2003-02-07 Mitsubishi Heavy Ind Ltd 応答型センサ及び応用計測システム
US20080268635A1 (en) 2001-07-25 2008-10-30 Sang-Ho Yu Process for forming cobalt and cobalt silicide materials in copper contact applications
US6638839B2 (en) 2001-07-26 2003-10-28 The University Of Toledo Hot-filament chemical vapor deposition chamber and process with multiple gas inlets
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6435865B1 (en) 2001-07-30 2002-08-20 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for positioning gas injectors in a vertical furnace
WO2003012843A1 (en) 2001-07-31 2003-02-13 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method and apparatus for cleaning and method and apparatus for etching
JP4236882B2 (ja) 2001-08-01 2009-03-11 東京エレクトロン株式会社 ガス処理装置およびガス処理方法
JP3958539B2 (ja) 2001-08-02 2007-08-15 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP4921652B2 (ja) 2001-08-03 2012-04-25 エイエスエム インターナショナル エヌ．ヴェー． イットリウム酸化物およびランタン酸化物薄膜を堆積する方法
US6678583B2 (en) 2001-08-06 2004-01-13 Seminet, Inc. Robotic storage buffer system for substrate carrier pods
JP2003060012A (ja) 2001-08-08 2003-02-28 Asm Japan Kk 半導体処理用反応チャンバ
JP3775262B2 (ja) 2001-08-09 2006-05-17 ヤマハ株式会社 電子楽器及び電子楽器システム
TW559905B (en) 2001-08-10 2003-11-01 Toshiba Corp Vertical chemical vapor deposition system cross-reference to related applications
US6531412B2 (en) 2001-08-10 2003-03-11 International Business Machines Corporation Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications
JP2003059999A (ja) 2001-08-14 2003-02-28 Tokyo Electron Ltd 処理システム
US20030035002A1 (en) 2001-08-15 2003-02-20 Samsung Electronics Co., Ltd. Alternate interpretation of markup language documents
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
USD699816S1 (en) 2001-08-17 2014-02-18 Neoperl Gmbh Stream straightener for faucet
JP2003060076A (ja) 2001-08-21 2003-02-28 Nec Corp 半導体装置及びその製造方法
KR100604751B1 (ko) 2001-08-24 2006-07-26 주식회사 하이닉스반도체 산 확산 방지용 포토레지스트 공중합체 및 이를 함유하는포토레지스트 조성물
KR20030018134A (ko) 2001-08-27 2003-03-06 한국전자통신연구원 조성과 도핑 농도의 제어를 위한 반도체 소자의 절연막형성 방법
US20030037800A1 (en) 2001-08-27 2003-02-27 Applied Materials, Inc. Method for removing contamination particles from substrate processing chambers
JP3886424B2 (ja) 2001-08-28 2007-02-28 鹿児島日本電気株式会社 基板処理装置及び方法
JP3832293B2 (ja) 2001-08-31 2006-10-11 株式会社ダイフク 荷保管設備
JP2003077782A (ja) 2001-08-31 2003-03-14 Toshiba Corp 半導体装置の製造方法
JP3832294B2 (ja) 2001-08-31 2006-10-11 株式会社ダイフク 荷保管設備
JP2003077845A (ja) 2001-09-05 2003-03-14 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
JP4460803B2 (ja) 2001-09-05 2010-05-12 パナソニック株式会社 基板表面処理方法
US6521547B1 (en) 2001-09-07 2003-02-18 United Microelectronics Corp. Method of repairing a low dielectric constant material layer
JP2003158127A (ja) 2001-09-07 2003-05-30 Arieesu Gijutsu Kenkyu Kk 成膜方法、成膜装置、及び半導体装置
US9708707B2 (en) 2001-09-10 2017-07-18 Asm International N.V. Nanolayer deposition using bias power treatment
US6756318B2 (en) 2001-09-10 2004-06-29 Tegal Corporation Nanolayer thick film processing system and method
JP4094262B2 (ja) 2001-09-13 2008-06-04 住友大阪セメント株式会社 吸着固定装置及びその製造方法
AU2002333601A1 (en) 2001-09-14 2003-04-01 Asm America, Inc. Metal nitride deposition by ald using gettering reactant
US6756085B2 (en) 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
US6541370B1 (en) 2001-09-17 2003-04-01 Taiwan Semiconductor Manufacturing Co., Ltd. Composite microelectronic dielectric layer with inhibited crack susceptibility
JP2003100717A (ja) 2001-09-21 2003-04-04 Tokyo Electron Ltd プラズマ処理装置
US20030059535A1 (en) 2001-09-25 2003-03-27 Lee Luo Cycling deposition of low temperature films in a cold wall single wafer process chamber
US6607976B2 (en) 2001-09-25 2003-08-19 Applied Materials, Inc. Copper interconnect barrier layer structure and formation method
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
JP2003106902A (ja) 2001-09-27 2003-04-09 Toshiba Corp 非接触温度測定方法及びその装置
US6782305B2 (en) 2001-10-01 2004-08-24 Massachusetts Institute Of Technology Method of geometric information sharing and parametric consistency maintenance in a collaborative design environment
US6960537B2 (en) 2001-10-02 2005-11-01 Asm America, Inc. Incorporation of nitrogen into high k dielectric film
US6720259B2 (en) 2001-10-02 2004-04-13 Genus, Inc. Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition
KR100431658B1 (ko) 2001-10-05 2004-05-17 삼성전자주식회사 기판 가열 장치 및 이를 갖는 장치
US6656282B2 (en) 2001-10-11 2003-12-02 Moohan Co., Ltd. Atomic layer deposition apparatus and process using remote plasma
US6461436B1 (en) 2001-10-15 2002-10-08 Micron Technology, Inc. Apparatus and process of improving atomic layer deposition chamber performance
US6936183B2 (en) 2001-10-17 2005-08-30 Applied Materials, Inc. Etch process for etching microstructures
US20080102203A1 (en) 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US20080102208A1 (en) 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
US7780789B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Vortex chamber lids for atomic layer deposition
JP2003133300A (ja) 2001-10-26 2003-05-09 Tokyo Electron Ltd 成膜装置及び成膜方法
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
DE20221269U1 (de) 2001-10-26 2005-12-08 Applied Materials, Inc., Santa Clara Gaszuführvorrichtung zur Abscheidung atomarer Schichten
US7204886B2 (en) 2002-11-14 2007-04-17 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
WO2003038145A2 (en) 2001-10-29 2003-05-08 Genus, Inc. Chemical vapor deposition system
US20040253867A1 (en) 2001-11-05 2004-12-16 Shuzo Matsumoto Circuit part connector structure and gasket
KR100782529B1 (ko) 2001-11-08 2007-12-06 에이에스엠지니텍코리아 주식회사 증착 장치
KR100760291B1 (ko) 2001-11-08 2007-09-19 에이에스엠지니텍코리아 주식회사 박막 형성 방법
KR100481307B1 (ko) 2001-11-08 2005-04-07 삼성전자주식회사 반도체 제조 설비의 카세트 테이블
US6975921B2 (en) 2001-11-09 2005-12-13 Asm International Nv Graphical representation of a wafer processing process
EP1446408A1 (en) 2001-11-09 2004-08-18 Yun Chi Volatile noble metal organometallic complexes
KR20030039247A (ko) 2001-11-12 2003-05-17 주성엔지니어링(주) 서셉터
US20040010772A1 (en) 2001-11-13 2004-01-15 General Electric Company Interactive method and system for faciliting the development of computer software applications
JP2005510082A (ja) 2001-11-16 2005-04-14 トリコン ホールディングス リミティド 低ｋ誘電層の形成
JP2003153706A (ja) 2001-11-20 2003-05-27 Toyobo Co Ltd 面ファスナー雌材及びその製造方法
US6926774B2 (en) 2001-11-21 2005-08-09 Applied Materials, Inc. Piezoelectric vaporizer
USD461233S1 (en) 2001-11-29 2002-08-06 James Michael Whalen Marine deck drain strainer
JP4116283B2 (ja) 2001-11-30 2008-07-09 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ヘキサキス（モノヒドロカルビルアミノ）ジシランおよびその製造方法
CN1599961A (zh) 2001-11-30 2005-03-23 松下电器产业株式会社 半导体装置及其制造方法
US7017514B1 (en) 2001-12-03 2006-03-28 Novellus Systems, Inc. Method and apparatus for plasma optimization in water processing
US6638879B2 (en) 2001-12-06 2003-10-28 Macronix International Co., Ltd. Method for forming nitride spacer by using atomic layer deposition
EP1453083A4 (en) 2001-12-07 2007-01-10 Tokyo Electron Ltd NITRISING METHOD FOR AN INSULATION FILM, SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT, SUBSTRATE TREATMENT DEVICE AND SUBSTRATE TREATMENT METHOD
KR100446619B1 (ko) 2001-12-14 2004-09-04 삼성전자주식회사 유도 결합 플라즈마 장치
SE0104252D0 (sv) 2001-12-17 2001-12-17 Sintercast Ab New device
US20030111013A1 (en) 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
US20030116087A1 (en) 2001-12-21 2003-06-26 Nguyen Anh N. Chamber hardware design for titanium nitride atomic layer deposition
US6841201B2 (en) 2001-12-21 2005-01-11 The Procter & Gamble Company Apparatus and method for treating a workpiece using plasma generated from microwave radiation
DE10163394A1 (de) 2001-12-21 2003-07-03 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden kristalliner Schichten und auf kristallinen Substraten
JP3891267B2 (ja) 2001-12-25 2007-03-14 キヤノンアネルバ株式会社 シリコン酸化膜作製方法
US20030124842A1 (en) 2001-12-27 2003-07-03 Applied Materials, Inc. Dual-gas delivery system for chemical vapor deposition processes
KR100442104B1 (ko) 2001-12-27 2004-07-27 삼성전자주식회사 커패시터를 갖는 반도체 소자의 제조방법
US6497734B1 (en) 2002-01-02 2002-12-24 Novellus Systems, Inc. Apparatus and method for enhanced degassing of semiconductor wafers for increased throughput
US6766260B2 (en) 2002-01-04 2004-07-20 Mks Instruments, Inc. Mass flow ratio system and method
US6942929B2 (en) 2002-01-08 2005-09-13 Nianci Han Process chamber having component with yttrium-aluminum coating
TWI262959B (en) 2002-01-15 2006-10-01 Tokyo Electron Ltd CVD method and apparatus for forming insulating film containing silicon
US6580050B1 (en) 2002-01-16 2003-06-17 Pace, Incorporated Soldering station with built-in self-calibration function
EP1466034A1 (en) 2002-01-17 2004-10-13 Sundew Technologies, LLC Ald apparatus and method
JP4071968B2 (ja) 2002-01-17 2008-04-02 東芝三菱電機産業システム株式会社 ガス供給システム及びガス供給方法
US6760981B2 (en) 2002-01-18 2004-07-13 Speedline Technologies, Inc. Compact convection drying chamber for drying printed circuit boards and other electronic assemblies by enhanced evaporation
US6793733B2 (en) 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6866746B2 (en) 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US20030141820A1 (en) 2002-01-30 2003-07-31 Applied Materials, Inc. Method and apparatus for substrate processing
DE10203838B4 (de) 2002-01-31 2006-12-28 Infineon Technologies Ag Fluorhaltiger Fotoresist mit Reaktionsankern für eine chemische Nachverstärkung und verbesserten Copolymerisationseigenschaften
US7115305B2 (en) 2002-02-01 2006-10-03 California Institute Of Technology Method of producing regular arrays of nano-scale objects using nano-structured block-copolymeric materials
KR100377095B1 (en) 2002-02-01 2003-03-20 Nexo Co Ltd Semiconductor fabrication apparatus using low energy plasma
US6732006B2 (en) 2002-02-06 2004-05-04 Asm International Nv Method and system to process semiconductor wafers
US6899507B2 (en) 2002-02-08 2005-05-31 Asm Japan K.K. Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections
US6777352B2 (en) 2002-02-11 2004-08-17 Applied Materials, Inc. Variable flow deposition apparatus and method in semiconductor substrate processing
US7479304B2 (en) 2002-02-14 2009-01-20 Applied Materials, Inc. Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
DE10207131B4 (de) 2002-02-20 2007-12-20 Infineon Technologies Ag Verfahren zur Bildung einer Hartmaske in einer Schicht auf einer flachen Scheibe
US6734090B2 (en) 2002-02-20 2004-05-11 International Business Machines Corporation Method of making an edge seal for a semiconductor device
JP2003243481A (ja) 2002-02-21 2003-08-29 Asm Japan Kk 半導体製造装置及びメンテナンス方法
US6787185B2 (en) 2002-02-25 2004-09-07 Micron Technology, Inc. Deposition methods for improved delivery of metastable species
NL1020054C2 (nl) 2002-02-25 2003-09-05 Asm Int Inrichting voor het behandelen van wafers, voorzien van een meetmiddelendoos.
US20030159653A1 (en) 2002-02-28 2003-08-28 Dando Ross S. Manifold assembly for feeding reactive precursors to substrate processing chambers
TW200305228A (en) 2002-03-01 2003-10-16 Hitachi Int Electric Inc Heat treatment apparatus and a method for fabricating substrates
KR100449028B1 (ko) 2002-03-05 2004-09-16 삼성전자주식회사 원자층 증착법을 이용한 박막 형성방법
KR100997699B1 (ko) 2002-03-05 2010-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
US20030168012A1 (en) 2002-03-07 2003-09-11 Hitoshi Tamura Plasma processing device and plasma processing method
US6596973B1 (en) * 2002-03-07 2003-07-22 Asm America, Inc. Pyrometer calibrated wafer temperature estimator
US7250083B2 (en) 2002-03-08 2007-07-31 Sundew Technologies, Llc ALD method and apparatus
JP2003264186A (ja) 2002-03-11 2003-09-19 Asm Japan Kk Ｃｖｄ装置処理室のクリーニング方法
US6753618B2 (en) 2002-03-11 2004-06-22 Micron Technology, Inc. MIM capacitor with metal nitride electrode materials and method of formation
US6746240B2 (en) 2002-03-15 2004-06-08 Asm International N.V. Process tube support sleeve with circumferential channels
US6835039B2 (en) 2002-03-15 2004-12-28 Asm International N.V. Method and apparatus for batch processing of wafers in a furnace
US6902395B2 (en) 2002-03-15 2005-06-07 Asm International, N.V. Multilevel pedestal for furnace
US20030173346A1 (en) 2002-03-18 2003-09-18 Renken Wayne Glenn System and method for heating and cooling wafer at accelerated rates
US6962644B2 (en) 2002-03-18 2005-11-08 Applied Materials, Inc. Tandem etch chamber plasma processing system
JP4157914B2 (ja) 2002-03-20 2008-10-01 坂野 數仁 温度測定装置及び温度測定方法
US6780787B2 (en) 2002-03-21 2004-08-24 Lam Research Corporation Low contamination components for semiconductor processing apparatus and methods for making components
US20030178145A1 (en) 2002-03-25 2003-09-25 Applied Materials, Inc. Closed hole edge lift pin and susceptor for wafer process chambers
JP4099092B2 (ja) 2002-03-26 2008-06-11 東京エレクトロン株式会社 基板処理装置および基板処理方法、高速ロータリバルブ
US6825134B2 (en) 2002-03-26 2004-11-30 Applied Materials, Inc. Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow
US6800134B2 (en) 2002-03-26 2004-10-05 Micron Technology, Inc. Chemical vapor deposition methods and atomic layer deposition methods
JP4128383B2 (ja) 2002-03-27 2008-07-30 東京エレクトロン株式会社 処理装置及び処理方法
JP4959921B2 (ja) 2002-03-28 2012-06-27 プレジデント アンド フェロウズ オブ ハーバード カレッジ 二酸化珪素ナノラミネートの蒸着
DE10214066B4 (de) 2002-03-28 2007-02-01 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement mit retrogradem Dotierprofil in einem Kanalgebiet und Verfahren zur Herstellung desselben
US6883733B1 (en) 2002-03-28 2005-04-26 Novellus Systems, Inc. Tapered post, showerhead design to improve mixing on dual plenum showerheads
US20030231698A1 (en) 2002-03-29 2003-12-18 Takatomo Yamaguchi Apparatus and method for fabricating a semiconductor device and a heat treatment apparatus
US6594550B1 (en) 2002-03-29 2003-07-15 Asm America, Inc. Method and system for using a buffer to track robotic movement
JP4001498B2 (ja) 2002-03-29 2007-10-31 東京エレクトロン株式会社 絶縁膜の形成方法及び絶縁膜の形成システム
JP4106948B2 (ja) 2002-03-29 2008-06-25 東京エレクトロン株式会社 被処理体の跳上り検出装置、被処理体の跳上り検出方法、プラズマ処理装置及びプラズマ処理方法
US20030188685A1 (en) 2002-04-08 2003-10-09 Applied Materials, Inc. Laser drilled surfaces for substrate processing chambers
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
JP4092937B2 (ja) 2002-04-11 2008-05-28 松下電工株式会社 プラズマ処理装置及びプラズマ処理方法
KR20030081144A (ko) 2002-04-11 2003-10-17 가부시키가이샤 히다치 고쿠사이 덴키 종형 반도체 제조 장치
US7988833B2 (en) 2002-04-12 2011-08-02 Schneider Electric USA, Inc. System and method for detecting non-cathode arcing in a plasma generation apparatus
US6710312B2 (en) 2002-04-12 2004-03-23 B H Thermal Corporation Heating jacket assembly with field replaceable thermostat
US6846515B2 (en) 2002-04-17 2005-01-25 Air Products And Chemicals, Inc. Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants
US8293001B2 (en) 2002-04-17 2012-10-23 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
KR100439948B1 (ko) 2002-04-19 2004-07-12 주식회사 아이피에스 리모트 플라즈마 ａｌｄ 장치 및 이를 이용한 ａｌｄ 박막증착방법
US20040025787A1 (en) 2002-04-19 2004-02-12 Selbrede Steven C. System for depositing a film onto a substrate using a low pressure gas precursor
US6825126B2 (en) 2002-04-25 2004-11-30 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device and substrate processing apparatus
KR100472730B1 (ko) 2002-04-26 2005-03-08 주식회사 하이닉스반도체 원자층증착법을 이용한 반도체 소자의 금속전극 형성방법
US7045430B2 (en) 2002-05-02 2006-05-16 Micron Technology Inc. Atomic layer-deposited LaAlO3 films for gate dielectrics
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7086347B2 (en) 2002-05-06 2006-08-08 Lam Research Corporation Apparatus and methods for minimizing arcing in a plasma processing chamber
US20030209326A1 (en) 2002-05-07 2003-11-13 Mattson Technology, Inc. Process and system for heating semiconductor substrates in a processing chamber containing a susceptor
JP2003324072A (ja) 2002-05-07 2003-11-14 Nec Electronics Corp 半導体製造装置
KR100437458B1 (ko) 2002-05-07 2004-06-23 삼성전자주식회사 상변화 기억 셀들 및 그 제조방법들
JP4338355B2 (ja) 2002-05-10 2009-10-07 東京エレクトロン株式会社 プラズマ処理装置
US7122844B2 (en) 2002-05-13 2006-10-17 Cree, Inc. Susceptor for MOCVD reactor
US6682973B1 (en) 2002-05-16 2004-01-27 Advanced Micro Devices, Inc. Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications
US20030213560A1 (en) 2002-05-16 2003-11-20 Yaxin Wang Tandem wafer processing system and process
US7074298B2 (en) 2002-05-17 2006-07-11 Applied Materials High density plasma CVD chamber
KR100466818B1 (ko) 2002-05-17 2005-01-24 주식회사 하이닉스반도체 반도체 소자의 절연막 형성 방법
US6825051B2 (en) 2002-05-17 2004-11-30 Asm America, Inc. Plasma etch resistant coating and process
US6797525B2 (en) 2002-05-22 2004-09-28 Agere Systems Inc. Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process
US6902656B2 (en) 2002-05-24 2005-06-07 Dalsa Semiconductor Inc. Fabrication of microstructures with vacuum-sealed cavity
KR20030092305A (ko) 2002-05-29 2003-12-06 삼성전자주식회사 고온 언도우프 막 증착 설비의 챔버 외벽에 대한 온도측정장치
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US20060014384A1 (en) 2002-06-05 2006-01-19 Jong-Cheol Lee Method of forming a layer and forming a capacitor of a semiconductor device having the same layer
JP4311914B2 (ja) 2002-06-05 2009-08-12 住友電気工業株式会社 半導体製造装置用ヒータモジュール
US7195693B2 (en) 2002-06-05 2007-03-27 Advanced Thermal Sciences Lateral temperature equalizing system for large area surfaces during processing
JP2004014952A (ja) 2002-06-10 2004-01-15 Tokyo Electron Ltd 処理装置および処理方法
US6849464B2 (en) 2002-06-10 2005-02-01 Micron Technology, Inc. Method of fabricating a multilayer dielectric tunnel barrier structure
JP4354908B2 (ja) 2002-06-10 2009-10-28 東京エレクトロン株式会社 処理装置
US6858547B2 (en) 2002-06-14 2005-02-22 Applied Materials, Inc. System and method for forming a gate dielectric
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US7601225B2 (en) 2002-06-17 2009-10-13 Asm International N.V. System for controlling the sublimation of reactants
JP2004022902A (ja) 2002-06-18 2004-01-22 Fujitsu Ltd 半導体装置の製造方法
US20030234371A1 (en) 2002-06-19 2003-12-25 Ziegler Byron J. Device for generating reactive ions
KR100455297B1 (ko) 2002-06-19 2004-11-06 삼성전자주식회사 무기물 나노튜브 제조방법
JP3670628B2 (ja) 2002-06-20 2005-07-13 株式会社東芝 成膜方法、成膜装置、および半導体装置の製造方法
TWI278532B (en) 2002-06-23 2007-04-11 Asml Us Inc Method for energy-assisted atomic layer deposition and removal
US6552209B1 (en) 2002-06-24 2003-04-22 Air Products And Chemicals, Inc. Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films
JP3999059B2 (ja) 2002-06-26 2007-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法
US7255775B2 (en) 2002-06-28 2007-08-14 Toshiba Ceramics Co., Ltd. Semiconductor wafer treatment member
US6827789B2 (en) 2002-07-01 2004-12-07 Semigear, Inc. Isolation chamber arrangement for serial processing of semiconductor wafers for the electronic industry
US20040018750A1 (en) 2002-07-02 2004-01-29 Sophie Auguste J.L. Method for deposition of nitrogen doped silicon carbide films
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US7356762B2 (en) 2002-07-08 2008-04-08 Asm International Nv Method for the automatic generation of an interactive electronic equipment documentation package
US6838125B2 (en) 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
CN1675402A (zh) 2002-07-12 2005-09-28 哈佛学院院长等 氮化钨的汽相沉积
JP2005533378A (ja) 2002-07-15 2005-11-04 アヴィザ テクノロジー インコーポレイテッド 熱処理装置及び設定可能な垂直チャンバ
US20070243317A1 (en) 2002-07-15 2007-10-18 Du Bois Dale R Thermal Processing System and Configurable Vertical Chamber
US6976822B2 (en) 2002-07-16 2005-12-20 Semitool, Inc. End-effectors and transfer devices for handling microelectronic workpieces
US6955211B2 (en) 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7357138B2 (en) 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
JP4186536B2 (ja) 2002-07-18 2008-11-26 松下電器産業株式会社 プラズマ処理装置
JP5005170B2 (ja) 2002-07-19 2012-08-22 エーエスエム アメリカ インコーポレイテッド 超高品質シリコン含有化合物層の形成方法
TW200427858A (en) 2002-07-19 2004-12-16 Asml Us Inc Atomic layer deposition of high k dielectric films
CN1643674A (zh) 2002-07-19 2005-07-20 阿维扎技术公司 使用氨基硅烷和臭氧的低温介电沉积
JP4133062B2 (ja) 2002-07-19 2008-08-13 大日本スクリーン製造株式会社 熱処理装置
KR100447284B1 (ko) 2002-07-19 2004-09-07 삼성전자주식회사 화학기상증착 챔버의 세정 방법
CN101109470A (zh) 2002-07-19 2008-01-23 诚实公司 液体流动控制器和精密分配设备及系统
US6772072B2 (en) 2002-07-22 2004-08-03 Applied Materials, Inc. Method and apparatus for monitoring solid precursor delivery
US6921062B2 (en) 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US7223323B2 (en) 2002-07-24 2007-05-29 Applied Materials, Inc. Multi-chemistry plating system
US7018555B2 (en) 2002-07-26 2006-03-28 Dainippon Screen Mfg. Co., Ltd. Substrate treatment method and substrate treatment apparatus
KR100464855B1 (ko) 2002-07-26 2005-01-06 삼성전자주식회사 박막 형성 방법과, 이를 이용한 커패시터 형성 방법 및트랜지스터 형성 방법
JP3908112B2 (ja) 2002-07-29 2007-04-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 サセプタ、エピタキシャルウェーハ製造装置及びエピタキシャルウェーハ製造方法
WO2004011695A2 (en) 2002-07-30 2004-02-05 Asm America, Inc. Sublimation system employing carrier gas
JP3725100B2 (ja) 2002-07-31 2005-12-07 アプライド マテリアルズ インコーポレイテッド 成膜方法
US7504006B2 (en) 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
DE10235427A1 (de) 2002-08-02 2004-02-12 Eos Gmbh Electro Optical Systems Vorrichtung und Verfahren zum Herstellen von dreidimensionalen Objekten mittels eines generativen Fertigungsverfahrens
US7153542B2 (en) 2002-08-06 2006-12-26 Tegal Corporation Assembly line processing method
JP4034145B2 (ja) 2002-08-09 2008-01-16 住友大阪セメント株式会社 サセプタ装置
US6818864B2 (en) 2002-08-09 2004-11-16 Asm America, Inc. LED heat lamp arrays for CVD heating
KR100480610B1 (ko) 2002-08-09 2005-03-31 삼성전자주식회사 실리콘 산화막을 이용한 미세 패턴 형성방법
US6887521B2 (en) 2002-08-15 2005-05-03 Micron Technology, Inc. Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices
US7085623B2 (en) 2002-08-15 2006-08-01 Asm International Nv Method and system for using short ranged wireless enabled computers as a service tool
US6890596B2 (en) 2002-08-15 2005-05-10 Micron Technology, Inc. Deposition methods
TW200408015A (en) 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high K metal silicates
TW200408323A (en) 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high k metal oxides
US6649921B1 (en) 2002-08-19 2003-11-18 Fusion Uv Systems, Inc. Apparatus and method providing substantially two-dimensionally uniform irradiation
US6927140B2 (en) 2002-08-21 2005-08-09 Intel Corporation Method for fabricating a bipolar transistor base
US20040036129A1 (en) 2002-08-22 2004-02-26 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US6884296B2 (en) 2002-08-23 2005-04-26 Micron Technology, Inc. Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
US6967154B2 (en) 2002-08-26 2005-11-22 Micron Technology, Inc. Enhanced atomic layer deposition
US7041609B2 (en) 2002-08-28 2006-05-09 Micron Technology, Inc. Systems and methods for forming metal oxides using alcohols
US6794284B2 (en) 2002-08-28 2004-09-21 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using disilazanes
US7256375B2 (en) 2002-08-30 2007-08-14 Asm International N.V. Susceptor plate for high temperature heat treatment
JP2004091848A (ja) 2002-08-30 2004-03-25 Tokyo Electron Ltd 薄膜形成装置の原料ガス供給系および薄膜形成装置
USD511280S1 (en) 2002-09-04 2005-11-08 Thermal Dynamics Corporation Plasma arc torch tip
EP1540259A2 (en) 2002-09-10 2005-06-15 FSI International, Inc. Thermal process station with heated lid
US6936086B2 (en) 2002-09-11 2005-08-30 Planar Systems, Inc. High conductivity particle filter
US20040050325A1 (en) 2002-09-12 2004-03-18 Samoilov Arkadii V. Apparatus and method for delivering process gas to a substrate processing system
JP2004103990A (ja) 2002-09-12 2004-04-02 Hitachi Kokusai Electric Inc 半導体製造装置および半導体装置の製造方法
US7011299B2 (en) 2002-09-16 2006-03-14 Matheson Tri-Gas, Inc. Liquid vapor delivery system and method of maintaining a constant level of fluid therein
KR100497748B1 (ko) 2002-09-17 2005-06-29 주식회사 무한 반도체소자 제조용 원자층 증착 장치 및 원자층 증착 방법
JP3594947B2 (ja) 2002-09-19 2004-12-02 東京エレクトロン株式会社 絶縁膜の形成方法、半導体装置の製造方法、基板処理装置
US7411352B2 (en) 2002-09-19 2008-08-12 Applied Process Technologies, Inc. Dual plasma beam sources and method
US6905940B2 (en) 2002-09-19 2005-06-14 Applied Materials, Inc. Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill
US7252738B2 (en) 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
US6715949B1 (en) 2002-09-20 2004-04-06 Eastman Kodak Company Medium-handling in printer for donor and receiver mediums
JP3887291B2 (ja) 2002-09-24 2007-02-28 東京エレクトロン株式会社 基板処理装置
JP4231953B2 (ja) 2002-09-24 2009-03-04 ペガサスネット株式会社 耳孔式ｓａｗ体温計及び該体温計による体温管理システム
JP3877157B2 (ja) 2002-09-24 2007-02-07 東京エレクトロン株式会社 基板処理装置
US6696367B1 (en) 2002-09-27 2004-02-24 Asm America, Inc. System for the improved handling of wafers within a process tool
JP2004127957A (ja) 2002-09-30 2004-04-22 Fujitsu Ltd 半導体装置の製造方法と半導体装置
JP2004128019A (ja) 2002-09-30 2004-04-22 Applied Materials Inc プラズマ処理方法及び装置
US20040065255A1 (en) 2002-10-02 2004-04-08 Applied Materials, Inc. Cyclical layer deposition system
US20070051471A1 (en) 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
US7749563B2 (en) 2002-10-07 2010-07-06 Applied Materials, Inc. Two-layer film for next generation damascene barrier application with good oxidation resistance
US7445690B2 (en) 2002-10-07 2008-11-04 Tokyo Electron Limited Plasma processing apparatus
JP3671951B2 (ja) 2002-10-08 2005-07-13 住友電気工業株式会社 測温装置及びそれを用いたセラミックスヒータ
JP4093462B2 (ja) 2002-10-09 2008-06-04 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2004134553A (ja) 2002-10-10 2004-04-30 Sony Corp レジストパターンの形成方法及び半導体装置の製造方法
US6905737B2 (en) 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
EP1408140A1 (en) 2002-10-11 2004-04-14 STMicroelectronics S.r.l. A high-density plasma process for depositing a layer of Silicon Nitride
US7080545B2 (en) 2002-10-17 2006-07-25 Advanced Technology Materials, Inc. Apparatus and process for sensing fluoro species in semiconductor processing systems
KR100460841B1 (ko) 2002-10-22 2004-12-09 한국전자통신연구원 플라즈마 인가 원자층 증착법을 통한 질소첨가 산화물박막의 형성방법
US6821909B2 (en) 2002-10-30 2004-11-23 Applied Materials, Inc. Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application
US6982230B2 (en) 2002-11-08 2006-01-03 International Business Machines Corporation Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
JP4009523B2 (ja) 2002-11-14 2007-11-14 岩谷産業株式会社 オゾンガス濃度計測方法及びオゾンガス濃度計測装置
US6676290B1 (en) 2002-11-15 2004-01-13 Hsueh-Yu Lu Electronic clinical thermometer
JP4502590B2 (ja) 2002-11-15 2010-07-14 株式会社ルネサステクノロジ 半導体製造装置
CN102344460B (zh) 2002-11-15 2014-05-28 哈佛学院院长等 使用脒基金属的原子层沉积
KR100520902B1 (ko) 2002-11-20 2005-10-12 주식회사 아이피에스 알루미늄 화합물을 이용한 박막증착방법
JP3946130B2 (ja) 2002-11-20 2007-07-18 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US7062161B2 (en) 2002-11-28 2006-06-13 Dainippon Screen Mfg. Co., Ltd. Photoirradiation thermal processing apparatus and thermal processing susceptor employed therefor
US7379785B2 (en) 2002-11-28 2008-05-27 Tokyo Electron Limited Substrate processing system, coating/developing apparatus, and substrate processing apparatus
KR100486690B1 (ko) 2002-11-29 2005-05-03 삼성전자주식회사 기판 이송 모듈의 오염을 제어할 수 있는 기판 처리 장치및 방법
KR100496265B1 (ko) 2002-11-29 2005-06-17 한국전자통신연구원 반도체 소자의 박막 형성방법
TW200410337A (en) 2002-12-02 2004-06-16 Au Optronics Corp Dry cleaning method for plasma reaction chamber
US6858524B2 (en) 2002-12-03 2005-02-22 Asm International, Nv Method of depositing barrier layer for metal gates
US7122414B2 (en) 2002-12-03 2006-10-17 Asm International, Inc. Method to fabricate dual metal CMOS devices
US6895158B2 (en) 2002-12-09 2005-05-17 Eastman Kodak Company Waveguide and method of smoothing optical surfaces
US6720531B1 (en) 2002-12-11 2004-04-13 Asm America, Inc. Light scattering process chamber walls
USD494552S1 (en) 2002-12-12 2004-08-17 Tokyo Electron Limited Exhaust ring for manufacturing semiconductors
USD496008S1 (en) 2002-12-12 2004-09-14 Tokyo Electron Limited Exhaust ring for manufacturing semiconductors
US6929699B2 (en) 2002-12-13 2005-08-16 Texas Instruments Incorporated Gas injectors for a vertical furnace used in semiconductor processing
US7092287B2 (en) 2002-12-18 2006-08-15 Asm International N.V. Method of fabricating silicon nitride nanodots
DE10259945A1 (de) 2002-12-20 2004-07-01 Tews, Walter, Dipl.-Chem. Dr.rer.nat.habil. Leuchtstoffe mit verlängerter Fluoreszenzlebensdauer
WO2004059699A2 (en) 2002-12-20 2004-07-15 Brooks Automation, Inc. System and method for on-the-fly eccentricity recognition
CN2588350Y (zh) 2002-12-26 2003-11-26 张连合 一种热电偶
JP2004207564A (ja) 2002-12-26 2004-07-22 Fujitsu Ltd 半導体装置の製造方法と半導体装置
DE10261362B8 (de) 2002-12-30 2008-08-28 Osram Opto Semiconductors Gmbh Substrat-Halter
US6692249B1 (en) 2003-01-06 2004-02-17 Texas Instruments Incorporated Hot liner insertion/removal fixture
US7270713B2 (en) 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
USD486891S1 (en) 2003-01-21 2004-02-17 Richard W. Cronce, Jr. Vent pipe protective cover
USD497977S1 (en) 2003-01-22 2004-11-02 Tour & Andersson Ab Sealing ring membrane
US7122222B2 (en) 2003-01-23 2006-10-17 Air Products And Chemicals, Inc. Precursors for depositing silicon containing films and processes thereof
US20040144980A1 (en) 2003-01-27 2004-07-29 Ahn Kie Y. Atomic layer deposition of metal oxynitride layers as gate dielectrics and semiconductor device structures utilizing metal oxynitride layers
USD558021S1 (en) 2003-01-30 2007-12-25 Roger Lawrence Metal fabrication clamp
US20040152287A1 (en) 2003-01-31 2004-08-05 Sherrill Adrian B. Deposition of a silicon film
US7163721B2 (en) 2003-02-04 2007-01-16 Tegal Corporation Method to plasma deposit on organic polymer dielectric film
US7129165B2 (en) 2003-02-04 2006-10-31 Asm Nutool, Inc. Method and structure to improve reliability of copper interconnects
US7713592B2 (en) 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
JP2004241203A (ja) 2003-02-04 2004-08-26 Hitachi High-Technologies Corp プラズマ処理室壁処理方法
KR100800639B1 (ko) 2003-02-06 2008-02-01 동경 엘렉트론 주식회사 플라즈마 처리 방법, 반도체 기판 및 플라즈마 처리 장치
US6876017B2 (en) 2003-02-08 2005-04-05 Intel Corporation Polymer sacrificial light absorbing structure and method
KR100505061B1 (ko) 2003-02-12 2005-08-01 삼성전자주식회사 기판 이송 모듈
US7374696B2 (en) 2003-02-14 2008-05-20 Applied Materials, Inc. Method and apparatus for removing a halogen-containing residue
TWI338323B (en) 2003-02-17 2011-03-01 Nikon Corp Stage device, exposure device and manufacguring method of devices
US20040168627A1 (en) 2003-02-27 2004-09-02 Sharp Laboratories Of America, Inc. Atomic layer deposition of oxide film
US6917755B2 (en) 2003-02-27 2005-07-12 Applied Materials, Inc. Substrate support
US7091453B2 (en) 2003-02-27 2006-08-15 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus by means of light irradiation
US6930059B2 (en) 2003-02-27 2005-08-16 Sharp Laboratories Of America, Inc. Method for depositing a nanolaminate film by atomic layer deposition
US7077911B2 (en) 2003-03-03 2006-07-18 Seiko Epson Corporation MOCVD apparatus and MOCVD method
US7192892B2 (en) 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
US7098149B2 (en) 2003-03-04 2006-08-29 Air Products And Chemicals, Inc. Mechanical enhancement of dense and porous organosilicate materials by UV exposure
JP2004273766A (ja) 2003-03-07 2004-09-30 Watanabe Shoko:Kk 気化装置及びそれを用いた成膜装置並びに気化方法及び成膜方法
US7238653B2 (en) 2003-03-10 2007-07-03 Hynix Semiconductor Inc. Cleaning solution for photoresist and method for forming pattern using the same
EP1613792B1 (en) 2003-03-14 2014-01-01 Genus, Inc. Methods and apparatus for atomic layer deposition
JP4369203B2 (ja) 2003-03-24 2009-11-18 信越化学工業株式会社 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法
JP2004288916A (ja) 2003-03-24 2004-10-14 Renesas Technology Corp Ｃｖｄ装置
CN100352032C (zh) 2003-03-26 2007-11-28 信越半导体株式会社 热处理用晶片支持器具及热处理装置
JP2004294638A (ja) 2003-03-26 2004-10-21 Tokyo Ohka Kogyo Co Ltd ネガ型レジスト材料およびレジストパターン形成方法
US6972055B2 (en) 2003-03-28 2005-12-06 Finens Corporation Continuous flow deposition system
US7223014B2 (en) 2003-03-28 2007-05-29 Intempco Controls Ltd. Remotely programmable integrated sensor transmitter
US7208389B1 (en) 2003-03-31 2007-04-24 Novellus Systems, Inc. Method of porogen removal from porous low-k films using UV radiation
US20040198069A1 (en) 2003-04-04 2004-10-07 Applied Materials, Inc. Method for hafnium nitride deposition
US7718930B2 (en) 2003-04-07 2010-05-18 Tokyo Electron Limited Loading table and heat treating apparatus having the loading table
SE525113C2 (sv) 2003-04-08 2004-11-30 Tetra Laval Holdings & Finance Metod och anordning för kontinuerlig blandning av två flöden
KR100500246B1 (ko) 2003-04-09 2005-07-11 삼성전자주식회사 가스공급장치
US7037376B2 (en) 2003-04-11 2006-05-02 Applied Materials Inc. Backflush chamber clean
US6843830B2 (en) 2003-04-15 2005-01-18 Advanced Technology Materials, Inc. Abatement system targeting a by-pass effluent stream of a semiconductor process tool
US6942753B2 (en) 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
US7077973B2 (en) 2003-04-18 2006-07-18 Applied Materials, Inc. Methods for substrate orientation
JP2004336019A (ja) 2003-04-18 2004-11-25 Advanced Lcd Technologies Development Center Co Ltd 成膜方法、半導体素子の形成方法、半導体素子、表示装置の形成方法及び表示装置
US20060151117A1 (en) 2003-04-18 2006-07-13 Hitachi Kokusai Electronic Inc. Semiconductor producing device and semiconductor producing method
TW200506093A (en) 2003-04-21 2005-02-16 Aviza Tech Inc System and method for forming multi-component films
US7221553B2 (en) 2003-04-22 2007-05-22 Applied Materials, Inc. Substrate support having heat transfer system
US7183186B2 (en) 2003-04-22 2007-02-27 Micro Technology, Inc. Atomic layer deposited ZrTiO4 films
US6953608B2 (en) 2003-04-23 2005-10-11 Taiwan Semiconductor Manufacturing Co., Ltd. Solution for FSG induced metal corrosion & metal peeling defects with extra bias liner and smooth RF bias ramp up
US20040211357A1 (en) 2003-04-24 2004-10-28 Gadgil Pradad N. Method of manufacturing a gap-filled structure of a semiconductor device
US20040261946A1 (en) 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
US20040261712A1 (en) 2003-04-25 2004-12-30 Daisuke Hayashi Plasma processing apparatus
KR200319645Y1 (ko) 2003-04-28 2003-07-12 이규옥 웨이퍼 캐리어 고정 장치
US7375035B2 (en) 2003-04-29 2008-05-20 Ronal Systems Corporation Host and ancillary tool interface methodology for distributed processing
US7601223B2 (en) 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
US7033113B2 (en) 2003-05-01 2006-04-25 Shell Oil Company Mid-line connector and method for pipe-in-pipe electrical heating
US20090204403A1 (en) 2003-05-07 2009-08-13 Omega Engineering, Inc. Speech generating means for use with signal sensors
US6939817B2 (en) 2003-05-08 2005-09-06 Micron Technology, Inc. Removal of carbon from an insulative layer using ozone
JP3642572B2 (ja) 2003-05-09 2005-04-27 東芝三菱電機産業システム株式会社 オゾン発生装置およびオゾン発生方法
JP4152802B2 (ja) 2003-05-09 2008-09-17 日本エー・エス・エム株式会社 薄膜形成装置
KR101090895B1 (ko) 2003-05-09 2011-12-08 에이에스엠 아메리카, 인코포레이티드 화학적 비활성화를 통한 반응기 표면의 패시베이션
US7265061B1 (en) 2003-05-09 2007-09-04 Novellus Systems, Inc. Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties
TW200507141A (en) 2003-05-12 2005-02-16 Agere Systems Inc Method of mass flow control flow verification and calibration
US20050000428A1 (en) 2003-05-16 2005-01-06 Shero Eric J. Method and apparatus for vaporizing and delivering reactant
USD505590S1 (en) 2003-05-22 2005-05-31 Kraft Foods Holdings, Inc. Susceptor tray
JP4403824B2 (ja) 2003-05-26 2010-01-27 東京エレクトロン株式会社 シリコン窒化膜の成膜方法
CN1795290B (zh) 2003-05-27 2010-06-16 应用材料股份有限公司 一种用来产生一可用于半导体处理系统的前体的方法和设备
US8512798B2 (en) 2003-06-05 2013-08-20 Superpower, Inc. Plasma assisted metalorganic chemical vapor deposition (MOCVD) system
US7141500B2 (en) 2003-06-05 2006-11-28 American Air Liquide, Inc. Methods for forming aluminum containing films utilizing amino aluminum precursors
US7589003B2 (en) 2003-06-13 2009-09-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
WO2005001902A2 (en) 2003-06-13 2005-01-06 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Gesn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
US7598513B2 (en) 2003-06-13 2009-10-06 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn
JP4823690B2 (ja) 2003-06-16 2011-11-24 東京エレクトロン株式会社 成膜方法および半導体装置の製造方法
KR20060079144A (ko) 2003-06-18 2006-07-05 어플라이드 머티어리얼스, 인코포레이티드 배리어 물질의 원자층 증착
US7192824B2 (en) 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
US6955072B2 (en) 2003-06-25 2005-10-18 Mks Instruments, Inc. System and method for in-situ flow verification and calibration
DE10328660B3 (de) 2003-06-26 2004-12-02 Infineon Technologies Ag Verfahren zum Bestimmen der Temperatur eines Halbleiterwafers
KR20050001793A (ko) 2003-06-26 2005-01-07 삼성전자주식회사 단원자층 증착 공정의 실시간 분석 방법
US7021330B2 (en) 2003-06-26 2006-04-04 Planar Systems, Inc. Diaphragm valve with reliability enhancements for atomic layer deposition
DE602004027256D1 (de) 2003-06-27 2010-07-01 Sundew Technologies Llc Vorrichtung und verfahren zur steuerung des dampfdrucks einer chemikalienquelle
US20100129548A1 (en) 2003-06-27 2010-05-27 Sundew Technologies, Llc Ald apparatus and method
US7833580B2 (en) 2003-07-04 2010-11-16 Samsung Electronics Co., Ltd. Method of forming a carbon nano-material layer using a cyclic deposition technique
US20070012402A1 (en) 2003-07-08 2007-01-18 Sundew Technologies, Llc Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement
US7547363B2 (en) 2003-07-08 2009-06-16 Tosoh Finechem Corporation Solid organometallic compound-filled container and filling method thereof
US7055875B2 (en) 2003-07-11 2006-06-06 Asyst Technologies, Inc. Ultra low contact area end effector
JP4298421B2 (ja) 2003-07-23 2009-07-22 エスペック株式会社 サーマルプレートおよび試験装置
US6909839B2 (en) 2003-07-23 2005-06-21 Advanced Technology Materials, Inc. Delivery systems for efficient vaporization of precursor source material
US7399388B2 (en) 2003-07-25 2008-07-15 Applied Materials, Inc. Sequential gas flow oxide deposition technique
ATE374936T1 (de) 2003-07-25 2007-10-15 Lightwind Corp Verfahren und vorrichtung zur überwachung chemischer prozesse
KR100527672B1 (ko) 2003-07-25 2005-11-28 삼성전자주식회사 서셉터 및 이를 포함하는 증착 장치
US7122481B2 (en) 2003-07-25 2006-10-17 Intel Corporation Sealing porous dielectrics with silane coupling reagents
US7361447B2 (en) 2003-07-30 2008-04-22 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
US7202166B2 (en) 2003-08-04 2007-04-10 Asm America, Inc. Surface preparation prior to deposition on germanium
US7695692B2 (en) 2003-08-06 2010-04-13 Sanderson William D Apparatus and method for producing chlorine dioxide
EP1661161A2 (en) 2003-08-07 2006-05-31 Sundew Technologies, LLC Perimeter partition-valve with protected seals
US20050037578A1 (en) 2003-08-14 2005-02-17 Wei Wen Chen [method for forming an oxide/ nitride/oxide stacked layer]
KR100536604B1 (ko) 2003-08-14 2005-12-14 삼성전자주식회사 고밀도 플라즈마 증착법을 이용한 갭필 방법
US6967305B2 (en) 2003-08-18 2005-11-22 Mks Instruments, Inc. Control of plasma transitions in sputter processing systems
JP2005072405A (ja) 2003-08-27 2005-03-17 Sony Corp 薄膜の形成方法および半導体装置の製造方法
US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US8152922B2 (en) 2003-08-29 2012-04-10 Asm America, Inc. Gas mixer and manifold assembly for ALD reactor
JP3881973B2 (ja) 2003-08-29 2007-02-14 三菱重工業株式会社 窒化シリコン膜の成膜方法
US7179758B2 (en) 2003-09-03 2007-02-20 International Business Machines Corporation Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics
JP4235066B2 (ja) 2003-09-03 2009-03-04 日本エー・エス・エム株式会社 薄膜形成方法
US20070022954A1 (en) 2003-09-03 2007-02-01 Tokyo Electron Limited Gas treatment device and heat readiting method
JP4563729B2 (ja) 2003-09-04 2010-10-13 東京エレクトロン株式会社 プラズマ処理装置
US7235482B2 (en) 2003-09-08 2007-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology
US7335277B2 (en) 2003-09-08 2008-02-26 Hitachi High-Technologies Corporation Vacuum processing apparatus
US7414281B1 (en) 2003-09-09 2008-08-19 Spansion Llc Flash memory with high-K dielectric material between substrate and gate
KR100551138B1 (ko) 2003-09-09 2006-02-10 어댑티브프라즈마테크놀로지 주식회사 균일한 플라즈마 발생을 위한 적응형 플라즈마 소스
US7132201B2 (en) 2003-09-12 2006-11-07 Micron Technology, Inc. Transparent amorphous carbon structure in semiconductor devices
US7056806B2 (en) 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
CA2539484A1 (en) 2003-09-17 2005-03-31 Sionex Corporation Solid-state flow generator and related systems, applications, and methods
KR100765681B1 (ko) 2003-09-19 2007-10-12 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 기판 처리 장치
US6911399B2 (en) 2003-09-19 2005-06-28 Applied Materials, Inc. Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition
JP4356410B2 (ja) 2003-09-22 2009-11-04 株式会社日立製作所 化学物質探知装置及び化学物質探知方法
US20050098107A1 (en) 2003-09-24 2005-05-12 Du Bois Dale R. Thermal processing system with cross-flow liner
US20070137794A1 (en) 2003-09-24 2007-06-21 Aviza Technology, Inc. Thermal processing system with across-flow liner
JP4524554B2 (ja) 2003-09-25 2010-08-18 信越化学工業株式会社 γ，δ−不飽和カルボン酸及びそのシリルエステルの製造方法、カルボキシル基を有する有機ケイ素化合物及びその製造方法
US20050121145A1 (en) 2003-09-25 2005-06-09 Du Bois Dale R. Thermal processing system with cross flow injection system with rotatable injectors
US7156380B2 (en) 2003-09-29 2007-01-02 Asm International, N.V. Safe liquid source containers
US20050069651A1 (en) 2003-09-30 2005-03-31 Tokyo Electron Limited Plasma processing system
US7205247B2 (en) 2003-09-30 2007-04-17 Aviza Technology, Inc. Atomic layer deposition of hafnium-based high-k dielectric
US6875677B1 (en) 2003-09-30 2005-04-05 Sharp Laboratories Of America, Inc. Method to control the interfacial layer for deposition of high dielectric constant films
US6982046B2 (en) 2003-10-01 2006-01-03 General Electric Company Light sources with nanometer-sized VUV radiation-absorbing phosphors
US7052757B2 (en) 2003-10-03 2006-05-30 Hewlett-Packard Development Company, L.P. Capping layer for enhanced performance media
US7408225B2 (en) 2003-10-09 2008-08-05 Asm Japan K.K. Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
US8501594B2 (en) 2003-10-10 2013-08-06 Applied Materials, Inc. Methods for forming silicon germanium layers
US6974781B2 (en) 2003-10-20 2005-12-13 Asm International N.V. Reactor precoating for reduced stress and uniform CVD
US7108753B2 (en) 2003-10-29 2006-09-19 Asm America, Inc. Staggered ribs on process chamber to reduce thermal effects
KR20060096445A (ko) 2003-10-29 2006-09-11 에이에스엠 아메리카, 인코포레이티드 박막 성장용 반응 시스템
US20050095859A1 (en) 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control
US20050101843A1 (en) 2003-11-06 2005-05-12 Welch Allyn, Inc. Wireless disposable physiological sensor
US7329947B2 (en) 2003-11-07 2008-02-12 Sumitomo Mitsubishi Silicon Corporation Heat treatment jig for semiconductor substrate
US8313277B2 (en) 2003-11-10 2012-11-20 Brooks Automation, Inc. Semiconductor manufacturing process modules
US7071118B2 (en) 2003-11-12 2006-07-04 Veeco Instruments, Inc. Method and apparatus for fabricating a conformal thin film on a substrate
US20050153571A1 (en) 2003-11-17 2005-07-14 Yoshihide Senzaki Nitridation of high-k dielectric films
CN1868042A (zh) 2003-11-20 2006-11-22 株式会社日立国际电气 半导体器件的制造方法和衬底处理装置
KR100550641B1 (ko) 2003-11-22 2006-02-09 주식회사 하이닉스반도체 산화하프늄과 산화알루미늄이 혼합된 유전막 및 그 제조방법
US7055263B2 (en) 2003-11-25 2006-06-06 Air Products And Chemicals, Inc. Method for cleaning deposition chambers for high dielectric constant materials
KR20050053417A (ko) 2003-12-02 2005-06-08 한국전자통신연구원 래디칼 보조 산화 장치
KR20050054122A (ko) 2003-12-04 2005-06-10 성명모 자외선 원자층 증착법을 이용한 박막 제조 방법
JP4725085B2 (ja) 2003-12-04 2011-07-13 株式会社豊田中央研究所 非晶質炭素、非晶質炭素被膜部材および非晶質炭素膜の成膜方法
US20050120805A1 (en) 2003-12-04 2005-06-09 John Lane Method and apparatus for substrate temperature control
US7431966B2 (en) 2003-12-09 2008-10-07 Micron Technology, Inc. Atomic layer deposition method of depositing an oxide on a substrate
US7143897B1 (en) 2003-12-09 2006-12-05 H20 International, Inc. Water filter
JP2005172489A (ja) 2003-12-09 2005-06-30 Tokyo Yogyo Co Ltd 溶湯用測温プローブ
KR100519798B1 (ko) 2003-12-11 2005-10-10 삼성전자주식회사 향상된 생산성을 갖는 박막 형성 방법
US7301623B1 (en) 2003-12-16 2007-11-27 Nanometrics Incorporated Transferring, buffering and measuring a substrate in a metrology system
US7220497B2 (en) 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
US7569193B2 (en) 2003-12-19 2009-08-04 Applied Materials, Inc. Apparatus and method for controlled combustion of gaseous pollutants
EP1709214A1 (en) 2003-12-22 2006-10-11 Seco Tools Ab Carrier body and method for coating cutting tools.
US7645341B2 (en) 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
US20050148162A1 (en) 2004-01-02 2005-07-07 Huajie Chen Method of preventing surface roughening during hydrogen pre-bake of SiGe substrates using chlorine containing gases
KR100620673B1 (ko) 2004-01-05 2006-09-13 주식회사 하이닉스반도체 포토레지스트 세정액 조성물 및 이를 이용한 패턴 형성 방법
KR100593960B1 (ko) 2004-01-09 2006-06-30 병호 최 광원자층 증착장치 및 증착방법
KR100549273B1 (ko) 2004-01-15 2006-02-03 주식회사 테라세미콘 반도체 제조장치의 기판홀더
JP4513329B2 (ja) 2004-01-16 2010-07-28 東京エレクトロン株式会社 処理装置
US7071051B1 (en) 2004-01-20 2006-07-04 Advanced Micro Devices, Inc. Method for forming a thin, high quality buffer layer in a field effect transistor and related structure
US7005227B2 (en) 2004-01-21 2006-02-28 Intel Corporation One component EUV photoresist
US7354847B2 (en) 2004-01-26 2008-04-08 Taiwan Semiconductor Manufacturing Company Method of trimming technology
JP4722501B2 (ja) 2004-01-29 2011-07-13 三星電子株式会社 半導体素子の多層誘電体構造物、半導体及びその製造方法
KR101118863B1 (ko) 2004-01-30 2012-03-19 도쿄엘렉트론가부시키가이샤 유체 간극을 갖는 기판 홀더 및 그 기판 홀더를 제조하는방법
US7163393B2 (en) 2004-02-02 2007-01-16 Sumitomo Mitsubishi Silicon Corporation Heat treatment jig for semiconductor silicon substrate
DE102004005385A1 (de) 2004-02-03 2005-10-20 Infineon Technologies Ag Verwendung von gelösten Hafniumalkoxiden bzw. Zirkoniumalkoxiden als Precursoren für Hafniumoxid- und Hafniumoxynitridschichten bzw. Zirkoniumoxid- und Zirkoniumoxynitridschichten
US20050229849A1 (en) 2004-02-13 2005-10-20 Applied Materials, Inc. High productivity plasma processing chamber
US20050181535A1 (en) 2004-02-17 2005-08-18 Yun Sun J. Method of fabricating passivation layer for organic devices
TWI263709B (en) 2004-02-17 2006-10-11 Ind Tech Res Inst Structure of strain relaxed thin Si/Ge epitaxial layer and fabricating method thereof
US20050187647A1 (en) 2004-02-19 2005-08-25 Kuo-Hua Wang Intelligent full automation controlled flow for a semiconductor furnace tool
US7088003B2 (en) 2004-02-19 2006-08-08 International Business Machines Corporation Structures and methods for integration of ultralow-k dielectrics with improved reliability
JP4698251B2 (ja) 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け
US20100297391A1 (en) 2004-02-25 2010-11-25 General Nanotechnoloy Llc Diamond capsules and methods of manufacture
WO2005083766A1 (ja) 2004-02-27 2005-09-09 Hitachi Kokusai Electric Inc. 基板処理装置
US20060062910A1 (en) 2004-03-01 2006-03-23 Meiere Scott H Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof
US20050214458A1 (en) 2004-03-01 2005-09-29 Meiere Scott H Low zirconium hafnium halide compositions
US7957708B2 (en) 2004-03-02 2011-06-07 Rosemount Inc. Process device with improved power generation
WO2005087974A2 (en) 2004-03-05 2005-09-22 Applied Materials, Inc. Cvd processes for the deposition of amorphous carbon films
US20050233477A1 (en) 2004-03-05 2005-10-20 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, and program for implementing the method
CN100373545C (zh) 2004-03-05 2008-03-05 东京毅力科创株式会社 基板处理装置、基板处理方法及程序
ATE448498T1 (de) 2004-03-08 2009-11-15 Adc Telecommunications Inc GLASFASERANSCHLUß
JP4246654B2 (ja) 2004-03-08 2009-04-02 株式会社日立ハイテクノロジーズ 真空処理装置
US7072743B2 (en) 2004-03-09 2006-07-04 Mks Instruments, Inc. Semiconductor manufacturing gas flow divider system and method
US7079740B2 (en) 2004-03-12 2006-07-18 Applied Materials, Inc. Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides
KR100538096B1 (ko) 2004-03-16 2005-12-21 삼성전자주식회사 원자층 증착 방법을 이용하는 커패시터 형성 방법
US7053010B2 (en) 2004-03-22 2006-05-30 Micron Technology, Inc. Methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming arrays of memory cells
US7524735B1 (en) 2004-03-25 2009-04-28 Novellus Systems, Inc Flowable film dielectric gap fill process
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US7074690B1 (en) 2004-03-25 2006-07-11 Novellus Systems, Inc. Selective gap-fill process
US20050214457A1 (en) 2004-03-29 2005-09-29 Applied Materials, Inc. Deposition of low dielectric constant films by N2O addition
US20050221021A1 (en) 2004-03-31 2005-10-06 Tokyo Electron Limited Method and system for performing atomic layer deposition
US20050221618A1 (en) 2004-03-31 2005-10-06 Amrhein Frederick J System for controlling a plenum output flow geometry
JPWO2005098922A1 (ja) 2004-03-31 2008-03-06 株式会社日立国際電気 半導体装置の製造方法
CN1292092C (zh) 2004-04-01 2006-12-27 南昌大学 用于金属有机化学气相沉积设备的双层进气喷头
US7585371B2 (en) 2004-04-08 2009-09-08 Micron Technology, Inc. Substrate susceptors for receiving semiconductor substrates to be deposited upon
US20050227502A1 (en) 2004-04-12 2005-10-13 Applied Materials, Inc. Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity
US7273526B2 (en) 2004-04-15 2007-09-25 Asm Japan K.K. Thin-film deposition apparatus
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US20060019502A1 (en) 2004-07-23 2006-01-26 Park Beom S Method of controlling the film properties of a CVD-deposited silicon nitride film
US7018941B2 (en) 2004-04-21 2006-03-28 Applied Materials, Inc. Post treatment of low k dielectric films
TWD110109S1 (zh) 2004-04-21 2006-04-11 東京威力科創股份有限公司 半導體製造用靜電夾盤吸附板
US7865070B2 (en) 2004-04-21 2011-01-04 Hitachi Kokusai Electric Inc. Heat treating apparatus
US20050238807A1 (en) 2004-04-27 2005-10-27 Applied Materials, Inc. Refurbishment of a coated chamber component
EP1756561A1 (en) 2004-04-28 2007-02-28 Sionex Corporation System and method for ion species analysis with enhanced condition control and data interpretation using differential mobility spectrometers
US7708859B2 (en) 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
ES2363089T3 (es) 2004-04-30 2011-07-20 Dichroic Cell S.R.L. Método para producir sustratos de ge virtuales para la integración iii/v sobre si (001).
US20070066038A1 (en) 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
US7712434B2 (en) 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US6982208B2 (en) 2004-05-03 2006-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method for producing high throughput strained-Si channel MOSFETS
US7049247B2 (en) 2004-05-03 2006-05-23 International Business Machines Corporation Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
JP2005322668A (ja) 2004-05-06 2005-11-17 Renesas Technology Corp 成膜装置および成膜方法
US7109114B2 (en) 2004-05-07 2006-09-19 Applied Materials, Inc. HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance
US7202148B2 (en) 2004-05-10 2007-04-10 Taiwan Semiconductor Manufacturing Company Method utilizing compensation features in semiconductor processing
US20050252447A1 (en) 2004-05-11 2005-11-17 Applied Materials, Inc. Gas blocker plate for improved deposition
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
WO2005109486A1 (en) 2004-05-12 2005-11-17 Viatron Technologies Inc. System for heat treatment of semiconductor device
US7748138B2 (en) 2004-05-13 2010-07-06 Tokyo Electron Limited Particle removal method for a substrate transfer mechanism and apparatus
US7815922B2 (en) 2004-05-14 2010-10-19 Becton, Dickinson And Company Articles having bioactive surfaces and solvent-free methods of preparation thereof
KR100469132B1 (ko) 2004-05-18 2005-01-29 주식회사 아이피에스 주기적 펄스 두 단계 플라즈마 원자층 증착장치 및 방법
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US20060019033A1 (en) 2004-05-21 2006-01-26 Applied Materials, Inc. Plasma treatment of hafnium-containing materials
JP2005340251A (ja) 2004-05-24 2005-12-08 Shin Etsu Chem Co Ltd プラズマ処理装置用のシャワープレート及びプラズマ処理装置
US7396746B2 (en) 2004-05-24 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Methods for stable and repeatable ion implantation
US7271093B2 (en) 2004-05-24 2007-09-18 Asm Japan K.K. Low-carbon-doped silicon oxide film and damascene structure using same
US7622005B2 (en) 2004-05-26 2009-11-24 Applied Materials, Inc. Uniformity control for low flow process and chamber to chamber matching
US20050266173A1 (en) 2004-05-26 2005-12-01 Tokyo Electron Limited Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process
US7580388B2 (en) 2004-06-01 2009-08-25 Lg Electronics Inc. Method and apparatus for providing enhanced messages on common control channel in wireless communication system
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US7651583B2 (en) 2004-06-04 2010-01-26 Tokyo Electron Limited Processing system and method for treating a substrate
US7037794B2 (en) 2004-06-09 2006-05-02 International Business Machines Corporation Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drain
US7132360B2 (en) 2004-06-10 2006-11-07 Freescale Semiconductor, Inc. Method for treating a semiconductor surface to form a metal-containing layer
EP2060846A1 (en) 2004-06-10 2009-05-20 Humanscale Corporation Device support arm
KR100589062B1 (ko) 2004-06-10 2006-06-12 삼성전자주식회사 원자층 적층 방식의 박막 형성방법 및 이를 이용한 반도체소자의 커패시터 형성방법
US7396743B2 (en) 2004-06-10 2008-07-08 Singh Kaushal K Low temperature epitaxial growth of silicon-containing films using UV radiation
JP4565897B2 (ja) 2004-06-14 2010-10-20 株式会社Adeka 薄膜形成用原料及び薄膜の製造方法
US7399570B2 (en) 2004-06-18 2008-07-15 Hynix Semiconductor Inc. Water-soluble negative photoresist polymer and composition containing the same
US7951262B2 (en) 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
JP4534619B2 (ja) 2004-06-21 2010-09-01 株式会社Sumco 半導体シリコン基板用熱処理治具
KR101248691B1 (ko) 2004-06-21 2013-04-03 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
US20050282350A1 (en) 2004-06-22 2005-12-22 You-Hua Chou Atomic layer deposition for filling a gap between devices
KR20050121426A (ko) 2004-06-22 2005-12-27 삼성에스디아이 주식회사 탄소나노튜브 제조용 촉매의 제조 방법
US7244958B2 (en) 2004-06-24 2007-07-17 International Business Machines Corporation Integration of strained Ge into advanced CMOS technology
US20050284573A1 (en) 2004-06-24 2005-12-29 Egley Fred D Bare aluminum baffles for resist stripping chambers
US7073834B2 (en) 2004-06-25 2006-07-11 Applied Materials, Inc. Multiple section end effector assembly
ATE444380T1 (de) 2004-06-28 2009-10-15 Cambridge Nanotech Inc Atomlagenabscheidungssystem und -verfahren
KR100614801B1 (ko) 2004-07-05 2006-08-22 삼성전자주식회사 반도체 장치의 막 형성방법
US7363195B2 (en) 2004-07-07 2008-04-22 Sensarray Corporation Methods of configuring a sensor network
EP1769522B1 (en) 2004-07-09 2016-11-23 Philips Lighting Holding B.V. Uvc/vuv dielectric barrier discharge lamp with reflector
US7094442B2 (en) 2004-07-13 2006-08-22 Applied Materials, Inc. Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon
US7422653B2 (en) 2004-07-13 2008-09-09 Applied Materials, Inc. Single-sided inflatable vertical slit valve
WO2006006377A1 (ja) 2004-07-13 2006-01-19 Hitachi Kokusai Electric Inc. 基板処理装置および半導体装置の製造方法
US7409263B2 (en) 2004-07-14 2008-08-05 Applied Materials, Inc. Methods and apparatus for repositioning support for a substrate carrier
KR100578819B1 (ko) 2004-07-15 2006-05-11 삼성전자주식회사 원자층 적층 방법과 이를 이용한 게이트 구조물의 제조방법 및 커패시터의 제조 방법
US20060016783A1 (en) 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
US20060021703A1 (en) 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US7689687B2 (en) 2004-07-30 2010-03-30 Fisher-Rosemount Systems, Inc. Communication controller with automatic time stamping
US20090107404A1 (en) 2004-07-30 2009-04-30 Katten Muchin Rosenman Llp Epitaxial reactor with susceptor controlled positioning
JP4417197B2 (ja) 2004-07-30 2010-02-17 住友大阪セメント株式会社 サセプタ装置
KR100689401B1 (ko) 2004-07-30 2007-03-08 주식회사 하이닉스반도체 포토레지스트 중합체 및 이를 함유하는 포토레지스트 조성물
US20060021572A1 (en) 2004-07-30 2006-02-02 Colorado School Of Mines High Vacuum Plasma-Assisted Chemical Vapor Deposition System
JP4718141B2 (ja) 2004-08-06 2011-07-06 東京エレクトロン株式会社 薄膜形成方法及び薄膜形成装置
US7955646B2 (en) 2004-08-09 2011-06-07 Applied Materials, Inc. Elimination of flow and pressure gradients in low utilization processes
US7470633B2 (en) 2004-08-09 2008-12-30 Asm Japan K.K. Method of forming a carbon polymer film using plasma CVD
KR101114219B1 (ko) 2004-08-09 2012-03-05 주성엔지니어링(주) 광원을 포함하는 원자층 증착장치 및 이를 이용한 증착방법
US7504344B2 (en) 2004-08-09 2009-03-17 Asm Japan K.K. Method of forming a carbon polymer film using plasma CVD
JP2006059931A (ja) 2004-08-18 2006-03-02 Canon Anelva Corp 急速加熱処理装置
US20060040054A1 (en) 2004-08-18 2006-02-23 Pearlstein Ronald M Passivating ALD reactor chamber internal surfaces to prevent residue buildup
US7119032B2 (en) 2004-08-23 2006-10-10 Air Products And Chemicals, Inc. Method to protect internal components of semiconductor processing equipment using layered superlattice materials
KR101071136B1 (ko) 2004-08-27 2011-10-10 엘지디스플레이 주식회사 평판표시장치의 제조를 위한 기판의 박막처리장치
ITMI20041677A1 (it) 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct Processo di pulitura e processo operativo per un reattore cvd.
US8158488B2 (en) 2004-08-31 2012-04-17 Micron Technology, Inc. Method of increasing deposition rate of silicon dioxide on a catalyst
DE102004042431B4 (de) 2004-08-31 2008-07-03 Schott Ag Verfahren und Vorrichtung zur Plasmabeschichtung von Werkstücken mit spektraler Auswertung der Prozessparameter und Verwendung der Vorrichtung
US7910288B2 (en) 2004-09-01 2011-03-22 Micron Technology, Inc. Mask material conversion
US7253084B2 (en) 2004-09-03 2007-08-07 Asm America, Inc. Deposition from liquid sources
JP2006108629A (ja) 2004-09-10 2006-04-20 Toshiba Corp 半導体装置の製造方法
US20060137609A1 (en) 2004-09-13 2006-06-29 Puchacz Jerzy P Multi-single wafer processing apparatus
WO2006034025A1 (en) 2004-09-16 2006-03-30 Arizona Board Of Regents MATERIALS AND OPTICAL DEVICES BASED ON GROUP IV QUANTUM WELLS GROWN ON Si-Ge-Sn BUFFERED SILICON
US20060060930A1 (en) 2004-09-17 2006-03-23 Metz Matthew V Atomic layer deposition of high dielectric constant gate dielectrics
JP4698190B2 (ja) 2004-09-22 2011-06-08 川惣電機工業株式会社 測温装置
JP4572100B2 (ja) 2004-09-28 2010-10-27 日本エー・エス・エム株式会社 プラズマ処理装置
JP2006097044A (ja) 2004-09-28 2006-04-13 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 成膜用前駆体、ルテニウム含有膜の成膜方法、ルテニウム膜の成膜方法、ルテニウム酸化物膜の成膜方法およびルテニウム酸塩膜の成膜方法
US7806587B2 (en) 2004-09-29 2010-10-05 Citizen Holdings Co., Ltd. Electronic clinical thermometer and method of producing the same
DE102005045081B4 (de) 2004-09-29 2011-07-07 Covalent Materials Corp. Suszeptor
US7241475B2 (en) 2004-09-30 2007-07-10 The Aerospace Corporation Method for producing carbon surface films by plasma exposure of a carbide compound
US7361958B2 (en) 2004-09-30 2008-04-22 Intel Corporation Nonplanar transistors with metal gate electrodes
US6874247B1 (en) 2004-10-12 2005-04-05 Tsang-Hung Hsu Toothbrush dryer
US20060257563A1 (en) 2004-10-13 2006-11-16 Seok-Joo Doh Method of fabricating silicon-doped metal oxide layer using atomic layer deposition technique
US20060099782A1 (en) 2004-10-15 2006-05-11 Massachusetts Institute Of Technology Method for forming an interface between germanium and other materials
US7427571B2 (en) 2004-10-15 2008-09-23 Asm International, N.V. Reactor design for reduced particulate generation
US7674726B2 (en) 2004-10-15 2010-03-09 Asm International N.V. Parts for deposition reactors
WO2006043531A1 (ja) 2004-10-19 2006-04-27 Canon Anelva Corporation 基板支持・搬送用トレイ
JP2006128188A (ja) 2004-10-26 2006-05-18 Nikon Corp 基板搬送装置、基板搬送方法および露光装置
US7790633B1 (en) 2004-10-26 2010-09-07 Novellus Systems, Inc. Sequential deposition/anneal film densification method
US7163900B2 (en) 2004-11-01 2007-01-16 Infineon Technologies Ag Using polydentate ligands for sealing pores in low-k dielectrics
US20060093756A1 (en) 2004-11-03 2006-05-04 Nagarajan Rajagopalan High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films
US7189626B2 (en) 2004-11-03 2007-03-13 Micron Technology, Inc. Electroless plating of metal caps for chalcogenide-based memory devices
JP2006135161A (ja) 2004-11-08 2006-05-25 Canon Inc 絶縁膜の形成方法及び装置
JP4435666B2 (ja) 2004-11-09 2010-03-24 東京エレクトロン株式会社 プラズマ処理方法、成膜方法
KR100782369B1 (ko) 2004-11-11 2007-12-07 삼성전자주식회사 반도체 제조장치
US7678682B2 (en) 2004-11-12 2010-03-16 Axcelis Technologies, Inc. Ultraviolet assisted pore sealing of porous low k dielectric films
US7428958B2 (en) 2004-11-15 2008-09-30 Nikon Corporation Substrate conveyor apparatus, substrate conveyance method and exposure apparatus
KR100773755B1 (ko) 2004-11-18 2007-11-09 주식회사 아이피에스 플라즈마 ａｌｄ 박막증착방법
TWI553703B (zh) 2004-11-18 2016-10-11 尼康股份有限公司 A position measuring method, a position control method, a measuring method, a loading method, an exposure method and an exposure apparatus, and a device manufacturing method
US20060107898A1 (en) 2004-11-19 2006-05-25 Blomberg Tom E Method and apparatus for measuring consumption of reactants
US20060108221A1 (en) 2004-11-24 2006-05-25 William Goodwin Method and apparatus for improving measuring accuracy in gas monitoring systems
US20080050536A1 (en) 2004-11-24 2008-02-28 Oc Oerlikon Balzers Ag Vacuum Processing Chamber for Very Large Area Substrates
US7722737B2 (en) 2004-11-29 2010-05-25 Applied Materials, Inc. Gas distribution system for improved transient phase deposition
US20060113806A1 (en) 2004-11-29 2006-06-01 Asm Japan K.K. Wafer transfer mechanism
JP4830290B2 (ja) 2004-11-30 2011-12-07 信越半導体株式会社 直接接合ウェーハの製造方法
JP2006153706A (ja) 2004-11-30 2006-06-15 Taiyo Nippon Sanso Corp 測温体および気相成長装置
US20060113675A1 (en) 2004-12-01 2006-06-01 Chung-Liang Chang Barrier material and process for Cu interconnect
US7368377B2 (en) 2004-12-09 2008-05-06 Interuniversitair Microelektronica Centrum (Imec) Vzw Method for selective deposition of a thin self-assembled monolayer
US7271463B2 (en) 2004-12-10 2007-09-18 Micron Technology, Inc. Trench insulation structures including an oxide liner that is thinner along the walls of the trench than along the base
US20060127067A1 (en) 2004-12-13 2006-06-15 General Electric Company Fast heating and cooling wafer handling assembly and method of manufacturing thereof
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US7290813B2 (en) 2004-12-16 2007-11-06 Asyst Technologies, Inc. Active edge grip rest pad
KR100558922B1 (ko) 2004-12-16 2006-03-10 (주)퓨전에이드 박막 증착장치 및 방법
US7396732B2 (en) 2004-12-17 2008-07-08 Interuniversitair Microelektronica Centrum Vzw (Imec) Formation of deep trench airgaps and related applications
US7396412B2 (en) 2004-12-22 2008-07-08 Sokudo Co., Ltd. Coat/develop module with shared dispense
JP4560681B2 (ja) 2004-12-24 2010-10-13 ミネベア株式会社 多灯式放電灯点灯装置
US20060137608A1 (en) 2004-12-28 2006-06-29 Choi Seung W Atomic layer deposition apparatus
WO2006070602A1 (ja) 2004-12-28 2006-07-06 Bridgestone Corporation 導電性エンドレスベルト、その製造方法およびそれを用いた画像形成装置
JP2006186271A (ja) 2004-12-28 2006-07-13 Sharp Corp 気相成長装置および成膜済基板の製造方法
AU2005322159A1 (en) 2004-12-29 2006-07-06 Biogen Idec Ma Inc. Bioreactor process control system and method
US7482247B1 (en) 2004-12-30 2009-01-27 Novellus Systems, Inc. Conformal nanolaminate dielectric deposition and etch bag gap fill process
US7846499B2 (en) 2004-12-30 2010-12-07 Asm International N.V. Method of pulsing vapor precursors in an ALD reactor
US20060144820A1 (en) 2004-12-30 2006-07-06 Sawin Herbert H Remote chamber methods for removing surface deposits
KR20070107017A (ko) 2004-12-30 2007-11-06 어플라이드 머티어리얼스, 인코포레이티드 트리밍과 호환되는 라인 에지 조도 감소 방법
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
JP2006188729A (ja) 2005-01-05 2006-07-20 Hitachi Kokusai Electric Inc 基板処理装置
US7598516B2 (en) 2005-01-07 2009-10-06 International Business Machines Corporation Self-aligned process for nanotube/nanowire FETs
US7169668B2 (en) 2005-01-09 2007-01-30 United Microelectronics Corp. Method of manufacturing a split-gate flash memory device
EP1866465A2 (en) 2005-01-18 2007-12-19 ASM America, Inc. Reaction system for growing a thin film
US20060156981A1 (en) 2005-01-18 2006-07-20 Kyle Fondurulia Wafer support pin assembly
US20060156980A1 (en) 2005-01-19 2006-07-20 Samsung Electronics Co., Ltd. Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus
US7964380B2 (en) 2005-01-21 2011-06-21 Argylia Technologies Nanoparticles for manipulation of biopolymers and methods of thereof
JP2006203120A (ja) 2005-01-24 2006-08-03 Toshiba Corp 半導体装置の製造方法
KR100640550B1 (ko) 2005-01-26 2006-10-31 주식회사 아이피에스 플라즈마 ａｌｄ 박막증착방법
US20060240187A1 (en) 2005-01-27 2006-10-26 Applied Materials, Inc. Deposition of an intermediate catalytic layer on a barrier layer for copper metallization
US7438949B2 (en) 2005-01-27 2008-10-21 Applied Materials, Inc. Ruthenium containing layer deposition method
CN101090953B (zh) 2005-01-31 2012-10-03 宇部兴产株式会社 红色氮化物荧光材料及其制造方法
US7235492B2 (en) 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
US7298009B2 (en) 2005-02-01 2007-11-20 Infineon Technologies Ag Semiconductor method and device with mixed orientation substrate
US7135402B2 (en) 2005-02-01 2006-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Sealing pores of low-k dielectrics using CxHy
US7816236B2 (en) 2005-02-04 2010-10-19 Asm America Inc. Selective deposition of silicon-containing films
KR100585178B1 (ko) 2005-02-05 2006-05-30 삼성전자주식회사 금속 게이트 전극을 가지는 ＦｉｎＦＥＴ을 포함하는반도체 소자 및 그 제조방법
US20060182885A1 (en) 2005-02-14 2006-08-17 Xinjian Lei Preparation of metal silicon nitride films via cyclic deposition
JP4546519B2 (ja) 2005-02-17 2010-09-15 株式会社日立国際電気 半導体デバイスの製造方法
JP4734317B2 (ja) 2005-02-17 2011-07-27 株式会社日立国際電気 基板処理方法および基板処理装置
KR20070108918A (ko) 2005-02-22 2007-11-13 에이에스엠 아메리카, 인코포레이티드 원자층 증착을 위한 표면의 플라즈마 전처리
US20060185589A1 (en) 2005-02-23 2006-08-24 Raanan Zehavi Silicon gas injector and method of making
US7410340B2 (en) 2005-02-24 2008-08-12 Asyst Technologies, Inc. Direct tool loading
KR100667598B1 (ko) 2005-02-25 2007-01-12 주식회사 아이피에스 반도체 처리 장치
JP4764028B2 (ja) 2005-02-28 2011-08-31 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR100854995B1 (ko) 2005-03-02 2008-08-28 삼성전자주식회사 고밀도 플라즈마 화학 기상 증착 장치
US8211235B2 (en) 2005-03-04 2012-07-03 Picosun Oy Apparatuses and methods for deposition of material on surfaces
US7629267B2 (en) 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
US6972478B1 (en) 2005-03-07 2005-12-06 Advanced Micro Devices, Inc. Integrated circuit and method for its manufacture
JP4258518B2 (ja) 2005-03-09 2009-04-30 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP4214124B2 (ja) 2005-03-14 2009-01-28 株式会社バイオエコーネット 耳式体温計
US7376520B2 (en) 2005-03-16 2008-05-20 Lam Research Corporation System and method for gas flow verification
US7211525B1 (en) 2005-03-16 2007-05-01 Novellus Systems, Inc. Hydrogen treatment enhanced gap fill
JP2006261434A (ja) 2005-03-17 2006-09-28 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude シリコン酸化膜の形成方法
US8974868B2 (en) 2005-03-21 2015-03-10 Tokyo Electron Limited Post deposition plasma cleaning system and method
US7314835B2 (en) 2005-03-21 2008-01-01 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US20060211259A1 (en) 2005-03-21 2006-09-21 Maes Jan W Silicon oxide cap over high dielectric constant films
KR100669828B1 (ko) 2005-03-22 2007-01-16 성균관대학교산학협력단 중성빔을 이용한 원자층 증착장치 및 이 장치를 이용한원자층 증착방법
KR100655431B1 (ko) 2005-03-23 2006-12-11 삼성전자주식회사 웨이퍼와의 접촉 면적을 최소화할 수 있는 웨이퍼 캐리어 및 이를 이용한 웨이퍼 세정방법
US7422636B2 (en) 2005-03-25 2008-09-09 Tokyo Electron Limited Plasma enhanced atomic layer deposition system having reduced contamination
US20060213437A1 (en) 2005-03-28 2006-09-28 Tokyo Electron Limited Plasma enhanced atomic layer deposition system
JP2006278058A (ja) 2005-03-28 2006-10-12 Matsushita Electric Works Ltd プラズマ処理装置
US7282415B2 (en) 2005-03-29 2007-10-16 Freescale Semiconductor, Inc. Method for making a semiconductor device with strain enhancement
US20060226117A1 (en) 2005-03-29 2006-10-12 Bertram Ronald T Phase change based heating element system and method
US20060228898A1 (en) 2005-03-30 2006-10-12 Cory Wajda Method and system for forming a high-k dielectric layer
TWD121115S1 (zh) 2005-03-30 2008-01-21 東京威力科創股份有限公司 遮護環
USD559993S1 (en) 2005-03-30 2008-01-15 Tokyo Electron Limited Cover ring
US8298336B2 (en) 2005-04-01 2012-10-30 Lam Research Corporation High strip rate downstream chamber
US7479198B2 (en) 2005-04-07 2009-01-20 Timothy D'Annunzio Methods for forming nanofiber adhesive structures
US20060264066A1 (en) 2005-04-07 2006-11-23 Aviza Technology, Inc. Multilayer multicomponent high-k films and methods for depositing the same
KR100640640B1 (ko) 2005-04-19 2006-10-31 삼성전자주식회사 미세 피치의 하드마스크를 이용한 반도체 소자의 미세 패턴형성 방법
JP4694878B2 (ja) 2005-04-20 2011-06-08 Ｏｋｉセミコンダクタ株式会社 半導体製造装置および半導体装置の製造方法
CN101208444A (zh) 2005-04-21 2008-06-25 霍尼韦尔国际公司 钌基材料和钌合金
US7160819B2 (en) 2005-04-25 2007-01-09 Sharp Laboratories Of America, Inc. Method to perform selective atomic layer deposition of zinc oxide
WO2006114781A2 (en) 2005-04-26 2006-11-02 University College Cork - National University Of Ireland, Cork Deposition of materials
US8137465B1 (en) 2005-04-26 2012-03-20 Novellus Systems, Inc. Single-chamber sequential curing of semiconductor wafers
US7544398B1 (en) 2005-04-26 2009-06-09 The Regents Of The Univesity Of California Controlled nano-doping of ultra thin films
US7351057B2 (en) 2005-04-27 2008-04-01 Asm International N.V. Door plate for furnace
US7425350B2 (en) 2005-04-29 2008-09-16 Asm Japan K.K. Apparatus, precursors and deposition methods for silicon-containing materials
US7084060B1 (en) 2005-05-04 2006-08-01 International Business Machines Corporation Forming capping layer over metal wire structure using selective atomic layer deposition
US7169018B2 (en) 2005-05-04 2007-01-30 Micrel, Incorporated Wafer carrier checker and method of using same
US7915173B2 (en) 2005-05-05 2011-03-29 Macronix International Co., Ltd. Shallow trench isolation structure having reduced dislocation density
US7214630B1 (en) 2005-05-06 2007-05-08 Novellus Systems, Inc. PMOS transistor with compressive dielectric capping layer
US20060251827A1 (en) 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
JP4666473B2 (ja) 2005-05-12 2011-04-06 大日本スクリーン製造株式会社 基板熱処理装置
US7875556B2 (en) 2005-05-16 2011-01-25 Air Products And Chemicals, Inc. Precursors for CVD silicon carbo-nitride and silicon nitride films
JP2006319261A (ja) 2005-05-16 2006-11-24 Dainippon Screen Mfg Co Ltd 基板処理装置
US7422775B2 (en) 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7312162B2 (en) 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US7109098B1 (en) 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7101763B1 (en) 2005-05-17 2006-09-05 International Business Machines Corporation Low capacitance junction-isolation for bulk FinFET technology
US20060260545A1 (en) 2005-05-17 2006-11-23 Kartik Ramaswamy Low temperature absorption layer deposition and high speed optical annealing system
KR100731164B1 (ko) 2005-05-19 2007-06-20 주식회사 피에조닉스 샤워헤드를 구비한 화학기상 증착 방법 및 장치
US20070155138A1 (en) 2005-05-24 2007-07-05 Pierre Tomasini Apparatus and method for depositing silicon germanium films
US7732342B2 (en) 2005-05-26 2010-06-08 Applied Materials, Inc. Method to increase the compressive stress of PECVD silicon nitride films
US8138104B2 (en) 2005-05-26 2012-03-20 Applied Materials, Inc. Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure
US8129290B2 (en) 2005-05-26 2012-03-06 Applied Materials, Inc. Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure
US20060269690A1 (en) 2005-05-27 2006-11-30 Asm Japan K.K. Formation technology for nanoparticle films having low dielectric constant
US20090029564A1 (en) 2005-05-31 2009-01-29 Tokyo Electron Limited Plasma treatment apparatus and plasma treatment method
US20060275933A1 (en) 2005-06-02 2006-12-07 Applied Materials, Inc. Thermally conductive ceramic tipped contact thermocouple
US7608490B2 (en) 2005-06-02 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20060281310A1 (en) 2005-06-08 2006-12-14 Applied Materials, Inc. Rotating substrate support and methods of use
EP1889287A1 (en) 2005-06-09 2008-02-20 Axcelis Technologies, Inc. Ultraviolet curing process for spin-on dielectric materials used in pre-metal and/or shallow trench isolation applications
WO2006134930A1 (ja) 2005-06-13 2006-12-21 Hitachi Kokusai Electric Inc. 半導体装置の製造方法、及び基板処理装置
US20060278524A1 (en) 2005-06-14 2006-12-14 Stowell Michael W System and method for modulating power signals to control sputtering
JP4853857B2 (ja) 2005-06-15 2012-01-11 東京エレクトロン株式会社 基板の処理方法，コンピュータ読み取り可能な記録媒体及び基板処理装置
JP4728708B2 (ja) 2005-06-17 2011-07-20 日本電気株式会社 配線基板及びその製造方法
JP4753173B2 (ja) 2005-06-17 2011-08-24 株式会社フジキン 流体制御装置
US7473655B2 (en) 2005-06-17 2009-01-06 Applied Materials, Inc. Method for silicon based dielectric chemical vapor deposition
US7601652B2 (en) 2005-06-21 2009-10-13 Applied Materials, Inc. Method for treating substrates and films with photoexcitation
US7648927B2 (en) 2005-06-21 2010-01-19 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US20060286819A1 (en) 2005-06-21 2006-12-21 Applied Materials, Inc. Method for silicon based dielectric deposition and clean with photoexcitation
US7651955B2 (en) 2005-06-21 2010-01-26 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US20060286774A1 (en) 2005-06-21 2006-12-21 Applied Materials. Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
KR100915722B1 (ko) 2005-06-23 2009-09-04 도쿄엘렉트론가부시키가이샤 반도체 처리 장치용의 구성 부재 및 그 제조 방법, 및반도체 처리 장치
JP2007005582A (ja) 2005-06-24 2007-01-11 Asm Japan Kk 基板搬送装置及びそれを搭載した半導体基板製造装置
US20060292310A1 (en) 2005-06-27 2006-12-28 Applied Materials, Inc. Process kit design to reduce particle generation
US7575990B2 (en) 2005-07-01 2009-08-18 Macronix International Co., Ltd. Method of forming self-aligned contacts and local interconnects
EP1899781B1 (en) 2005-07-07 2014-09-03 MKS Instruments, Inc. Ozone system for multi-chamber tools
EP1907599A2 (en) 2005-07-08 2008-04-09 Aviza Technology, Inc. Method for depositing silicon-containing films
US20070010072A1 (en) 2005-07-09 2007-01-11 Aviza Technology, Inc. Uniform batch film deposition process and films so produced
US8771806B2 (en) 2005-07-09 2014-07-08 Bang-Kwon Kang Surface coating method for hydrophobic and superhydrophobic treatment in atmospheric pressure plasma
TWI397969B (zh) 2005-07-11 2013-06-01 布魯克斯自動機械公司 具有迅速工件定中心功能的加工裝置
US7579285B2 (en) 2005-07-11 2009-08-25 Imec Atomic layer deposition method for depositing a layer
US7762755B2 (en) 2005-07-11 2010-07-27 Brooks Automation, Inc. Equipment storage for substrate processing apparatus
TW200702647A (en) 2005-07-13 2007-01-16 Actherm Inc Heat conductive structure of electronic clinical thermometer and clinical thermometer with the same
US7271044B2 (en) 2005-07-21 2007-09-18 International Business Machines Corporation CMOS (complementary metal oxide semiconductor) technology
US7314838B2 (en) 2005-07-21 2008-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a high density dielectric film by chemical vapor deposition
JP2007035747A (ja) 2005-07-25 2007-02-08 Sumitomo Electric Ind Ltd ウェハ保持体およびそれを搭載したウェハプローバ
KR100961016B1 (ko) 2005-07-26 2010-06-01 가와사키 플랜트 시스템즈 가부시키 가이샤 혼합유체의 균일화장치 및 혼합유체 공급설비
JP2007035899A (ja) 2005-07-27 2007-02-08 Sumitomo Electric Ind Ltd ウエハプローバ用ウエハ保持体及びそれを搭載したウエハプローバ
TWI313486B (en) 2005-07-28 2009-08-11 Nuflare Technology Inc Position measurement apparatus and method and writing apparatus and method
TWI327339B (en) 2005-07-29 2010-07-11 Nuflare Technology Inc Vapor phase growing apparatus and vapor phase growing method
TWI261313B (en) 2005-07-29 2006-09-01 Ind Tech Res Inst A method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof
TWD117941S1 (zh) 2005-07-29 2007-07-01 東京威力科創股份有限公司 電漿處理裝置之微波導入窗用頂板
TWD117939S1 (zh) 2005-07-29 2007-07-01 東京威力科創股份有限公司 電漿處理裝置之微波導入窗用頂板
TWD125339S1 (zh) 2005-07-29 2008-10-11 東京威力科創股份有限公司 電漿處理裝置之微波導入窗用頂板
US20070028842A1 (en) 2005-08-02 2007-02-08 Makoto Inagawa Vacuum chamber bottom
US20090045829A1 (en) 2005-08-04 2009-02-19 Sumitomo Electric Industries, Ltd. Wafer holder for wafer prober and wafer prober equipped with same
WO2007015436A1 (ja) 2005-08-04 2007-02-08 Tosoh Corporation 金属含有化合物、その製造方法、金属含有薄膜及びその形成方法
US20070037412A1 (en) 2005-08-05 2007-02-15 Tokyo Electron Limited In-situ atomic layer deposition
WO2007018157A1 (ja) 2005-08-05 2007-02-15 Tokyo Electron Limited 基板処理装置およびそれに用いる基板載置台
US7323401B2 (en) 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7335611B2 (en) 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7312148B2 (en) 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
US7429532B2 (en) 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
US7229873B2 (en) 2005-08-10 2007-06-12 Texas Instruments Incorporated Process for manufacturing dual work function metal gates in a microelectronics device
JP4666215B2 (ja) 2005-08-10 2011-04-06 株式会社ダイフク 物品搬送装置
WO2007020874A1 (ja) 2005-08-16 2007-02-22 Hitachi Kokusai Electric Inc. 薄膜形成方法および半導体デバイスの製造方法
US7718225B2 (en) 2005-08-17 2010-05-18 Applied Materials, Inc. Method to control semiconductor film deposition characteristics
JP5184357B2 (ja) 2005-08-24 2013-04-17 エレクトロニクス アンド テレコミュニケーションズ リサーチ インスチチュート バナジウム酸化物薄膜の製造方法
KR100689037B1 (ko) 2005-08-24 2007-03-08 삼성전자주식회사 마이크로파 공명 플라즈마 발생장치 및 그것을 구비하는플라즈마 처리 시스템
US8123968B2 (en) 2005-08-25 2012-02-28 Round Rock Research, Llc Multiple deposition for integration of spacers in pitch multiplication process
USD557226S1 (en) 2005-08-25 2007-12-11 Hitachi High-Technologies Corporation Electrode cover for a plasma processing apparatus
USD556704S1 (en) 2005-08-25 2007-12-04 Hitachi High-Technologies Corporation Grounded electrode for a plasma processing apparatus
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US7393736B2 (en) 2005-08-29 2008-07-01 Micron Technology, Inc. Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics
JP4815600B2 (ja) 2005-09-06 2011-11-16 株式会社テラセミコン 多結晶シリコン薄膜製造方法及びその製造装置
JP2009508003A (ja) 2005-09-08 2009-02-26 アプライド マテリアルズ インコーポレイテッド 大面積エレクトロニクス用のパターン形成無電解金属化処理
US8052794B2 (en) 2005-09-12 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Directed reagents to improve material uniformity
US20070056850A1 (en) 2005-09-13 2007-03-15 Applied Materials, Inc. Large-area magnetron sputtering chamber with individually controlled sputtering zones
US20070056843A1 (en) 2005-09-13 2007-03-15 Applied Materials, Inc. Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
US20070066084A1 (en) 2005-09-21 2007-03-22 Cory Wajda Method and system for forming a layer with controllable spstial variation
JP5017950B2 (ja) 2005-09-21 2012-09-05 株式会社Ｓｕｍｃｏ エピタキシャル成長装置の温度管理方法
US20070065578A1 (en) 2005-09-21 2007-03-22 Applied Materials, Inc. Treatment processes for a batch ALD reactor
JP2007088113A (ja) 2005-09-21 2007-04-05 Sony Corp 半導体装置の製造方法
US7578616B2 (en) 2005-09-22 2009-08-25 Lam Research Corporation Apparatus for determining a temperature of a substrate and methods therefor
WO2007041164A2 (en) 2005-09-30 2007-04-12 Bognar John A Measuring nitrogen oxides and other gases by ozone formation
US7976641B1 (en) 2005-09-30 2011-07-12 Lam Research Corporation Extending storage time of removed plasma chamber components prior to cleaning thereof
US8372203B2 (en) 2005-09-30 2013-02-12 Applied Materials, Inc. Apparatus temperature control and pattern compensation
US7691204B2 (en) 2005-09-30 2010-04-06 Applied Materials, Inc. Film formation apparatus and methods including temperature and emissivity/pattern compensation
USD541125S1 (en) 2005-10-05 2007-04-24 Powers Products Iii, Llc Fastener slide
US7785658B2 (en) 2005-10-07 2010-08-31 Asm Japan K.K. Method for forming metal wiring structure
US7754906B2 (en) 2005-10-07 2010-07-13 Air Products And Chemicals, Inc. Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides
US7736528B2 (en) 2005-10-12 2010-06-15 Panasonic Corporation Plasma processing apparatus and plasma processing method
US7294581B2 (en) 2005-10-17 2007-11-13 Applied Materials, Inc. Method for fabricating silicon nitride spacer structures
US7691205B2 (en) 2005-10-18 2010-04-06 Asm Japan K.K. Substrate-supporting device
KR100725108B1 (ko) 2005-10-18 2007-06-04 삼성전자주식회사 가스 공급 장치 및 이를 갖는 기판 가공 장치
US7727828B2 (en) 2005-10-20 2010-06-01 Applied Materials, Inc. Method for fabricating a gate dielectric of a field effect transistor
US8377628B2 (en) 2005-10-20 2013-02-19 Agfa Graphics Nv Negative working, heat-sensitive, lithographic printing plate precursor
US7906910B2 (en) 2005-10-27 2011-03-15 Luxim Corporation Plasma lamp with conductive material positioned relative to RF feed
US8993055B2 (en) 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
US7994721B2 (en) 2005-10-27 2011-08-09 Luxim Corporation Plasma lamp and methods using a waveguide body and protruding bulb
US7638951B2 (en) 2005-10-27 2009-12-29 Luxim Corporation Plasma lamp with stable feedback amplification and method therefor
JP5044931B2 (ja) 2005-10-31 2012-10-10 東京エレクトロン株式会社 ガス供給装置及び基板処理装置
US20070095283A1 (en) 2005-10-31 2007-05-03 Galewski Carl J Pumping System for Atomic Layer Deposition
US7399712B1 (en) 2005-10-31 2008-07-15 Novellus Systems, Inc. Method for etching organic hardmasks
EP1954926A2 (en) 2005-10-31 2008-08-13 Applied Materials, Inc. Process abatement reactor
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
DE102005051994B4 (de) 2005-10-31 2011-12-01 Globalfoundries Inc. Verformungsverfahrenstechnik in Transistoren auf Siliziumbasis unter Anwendung eingebetteter Halbleiterschichten mit Atomen mit einem großen kovalenten Radius
KR101019293B1 (ko) 2005-11-04 2011-03-07 어플라이드 머티어리얼스, 인코포레이티드 플라즈마-강화 원자층 증착 장치 및 방법
US7695808B2 (en) 2005-11-07 2010-04-13 3M Innovative Properties Company Thermal transfer coating
US7622378B2 (en) 2005-11-09 2009-11-24 Tokyo Electron Limited Multi-step system and method for curing a dielectric film
US7561982B2 (en) 2005-11-10 2009-07-14 Shake Awake Products, LLC Physical attribute recording method and system
JP4940635B2 (ja) 2005-11-14 2012-05-30 東京エレクトロン株式会社 加熱装置、熱処理装置及び記憶媒体
US7589028B1 (en) 2005-11-15 2009-09-15 Novellus Systems, Inc. Hydroxyl bond removal and film densification method for oxide films using microwave post treatment
GB2432363B (en) 2005-11-16 2010-06-23 Epichem Ltd Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition
KR100660890B1 (ko) 2005-11-16 2006-12-26 삼성전자주식회사 Ａｌｄ를 이용한 이산화실리콘막 형성 방법
US7897217B2 (en) 2005-11-18 2011-03-01 Tokyo Electron Limited Method and system for performing plasma enhanced atomic layer deposition
US20070116888A1 (en) 2005-11-18 2007-05-24 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
US20070116873A1 (en) 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US8815014B2 (en) 2005-11-18 2014-08-26 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
KR100975268B1 (ko) 2005-11-18 2010-08-11 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 기판 처리 장치
US20070116872A1 (en) 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
JP2009529223A (ja) 2005-11-22 2009-08-13 ジーナス インコーポレーテッド 小体積対称流れシングルウェハａｌｄ装置
US7629277B2 (en) 2005-11-23 2009-12-08 Honeywell International Inc. Frag shield
US7912439B2 (en) 2005-11-25 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method thereof
WO2007062242A2 (en) 2005-11-28 2007-05-31 Msp Corporation High stability and high capacity precursor vapor generation for thin film deposition
JP5082229B2 (ja) 2005-11-29 2012-11-28 東京エレクトロン株式会社 プラズマ処理装置
US20070125762A1 (en) 2005-12-01 2007-06-07 Applied Materials, Inc. Multi-zone resistive heater
US7862683B2 (en) 2005-12-02 2011-01-04 Tokyo Electron Limited Chamber dry cleaning
US7857506B2 (en) 2005-12-05 2010-12-28 Sencal Llc Disposable, pre-calibrated, pre-validated sensors for use in bio-processing applications
US7963917B2 (en) 2005-12-05 2011-06-21 Echo Therapeutics, Inc. System and method for continuous non-invasive glucose monitoring
JP4931082B2 (ja) 2005-12-06 2012-05-16 株式会社アルバック ガスヘッド及び薄膜製造装置
US8003919B2 (en) 2005-12-06 2011-08-23 Dainippon Screen Mfg. Co., Ltd. Substrate heat treatment apparatus
JP4666496B2 (ja) 2005-12-07 2011-04-06 大日本スクリーン製造株式会社 基板熱処理装置
US7592251B2 (en) 2005-12-08 2009-09-22 Micron Technology, Inc. Hafnium tantalum titanium oxide films
JP4803578B2 (ja) 2005-12-08 2011-10-26 東京エレクトロン株式会社 成膜方法
US8454749B2 (en) 2005-12-19 2013-06-04 Tokyo Electron Limited Method and system for sealing a first assembly to a second assembly of a processing system
US7713584B2 (en) 2005-12-22 2010-05-11 Asm International N.V. Process for producing oxide films
US7381644B1 (en) 2005-12-23 2008-06-03 Novellus Systems, Inc. Pulsed PECVD method for modulating hydrogen content in hard mask
JP4629574B2 (ja) 2005-12-27 2011-02-09 日本発條株式会社 基板支持装置と、その製造方法
KR101296911B1 (ko) 2005-12-28 2013-08-14 엘지디스플레이 주식회사 평판표시소자의 제조장치 및 그의 정전기량 검출장치 및검출방법
TWM292692U (en) 2005-12-29 2006-06-21 Powerchip Semiconductor Corp Thermocouple apparatus
TWI284390B (en) 2006-01-10 2007-07-21 Ind Tech Res Inst Manufacturing method of charge store device
US8088248B2 (en) 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
JP5068458B2 (ja) 2006-01-18 2012-11-07 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP5324026B2 (ja) 2006-01-18 2013-10-23 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の制御方法
US7918938B2 (en) 2006-01-19 2011-04-05 Asm America, Inc. High temperature ALD inlet manifold
JP2007191792A (ja) 2006-01-19 2007-08-02 Atto Co Ltd ガス分離型シャワーヘッド
US20070173071A1 (en) 2006-01-20 2007-07-26 International Business Machines Corporation SiCOH dielectric
US20080254220A1 (en) 2006-01-20 2008-10-16 Tokyo Electron Limited Plasma processing apparatus
US8673413B2 (en) 2006-01-27 2014-03-18 Tosoh Finechem Corporation Method for packing solid organometallic compound and packed container
JP4854317B2 (ja) 2006-01-31 2012-01-18 東京エレクトロン株式会社 基板処理方法
US7736437B2 (en) 2006-02-03 2010-06-15 Integrated Materials, Incorporated Baffled liner cover
US20070184179A1 (en) 2006-02-09 2007-08-09 Akshay Waghray Methods and apparatus to monitor a process of depositing a constituent of a multi-constituent gas during production of a composite brake disc
US20070187363A1 (en) 2006-02-13 2007-08-16 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
US8057603B2 (en) 2006-02-13 2011-11-15 Tokyo Electron Limited Method of cleaning substrate processing chamber, storage medium, and substrate processing chamber
JP4783169B2 (ja) 2006-02-13 2011-09-28 パナソニック株式会社 ドライエッチング方法、微細構造形成方法、モールド及びその製造方法
JP2007211326A (ja) 2006-02-13 2007-08-23 Nec Electronics Corp 成膜装置および成膜方法
KR101379015B1 (ko) 2006-02-15 2014-03-28 한국에이에스엠지니텍 주식회사 플라즈마 원자층 증착법을 이용한 루테늄 막 증착 방법 및고밀도 루테늄 층
KR101186740B1 (ko) 2006-02-17 2012-09-28 삼성전자주식회사 뱅크형성 방법 및 이에 의해 형성된 뱅크를 함유하는 유기박막 트랜지스터
KR20070084683A (ko) 2006-02-21 2007-08-27 국민대학교산학협력단 분자층 증착법
US20070207275A1 (en) 2006-02-21 2007-09-06 Applied Materials, Inc. Enhancement of remote plasma source clean for dielectric films
US7354849B2 (en) 2006-02-28 2008-04-08 Intel Corporation Catalytically enhanced atomic layer deposition process
KR101005518B1 (ko) 2006-03-07 2011-01-04 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 기판 처리 방법 및 막 형성 방법
US7716993B2 (en) 2006-03-07 2010-05-18 Ckd Corporation Gas flow rate verification unit
US7670432B2 (en) 2006-03-08 2010-03-02 Tokyo Electron Limited Exhaust system for a vacuum processing system
US7740705B2 (en) 2006-03-08 2010-06-22 Tokyo Electron Limited Exhaust apparatus configured to reduce particle contamination in a deposition system
US7794546B2 (en) 2006-03-08 2010-09-14 Tokyo Electron Limited Sealing device and method for a processing system
US7460003B2 (en) 2006-03-09 2008-12-02 International Business Machines Corporation Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer
US7494882B2 (en) 2006-03-10 2009-02-24 Texas Instruments Incorporated Manufacturing a semiconductive device using a controlled atomic layer removal process
KR20070093493A (ko) 2006-03-14 2007-09-19 엘지이노텍 주식회사 서셉터 및 반도체 제조장치
US20070218200A1 (en) 2006-03-16 2007-09-20 Kenji Suzuki Method and apparatus for reducing particle formation in a vapor distribution system
US8268078B2 (en) 2006-03-16 2012-09-18 Tokyo Electron Limited Method and apparatus for reducing particle contamination in a deposition system
US7692171B2 (en) 2006-03-17 2010-04-06 Andrzei Kaszuba Apparatus and method for exposing a substrate to UV radiation using asymmetric reflectors
US7566891B2 (en) 2006-03-17 2009-07-28 Applied Materials, Inc. Apparatus and method for treating a substrate with UV radiation using primary and secondary reflectors
US7410915B2 (en) 2006-03-23 2008-08-12 Asm Japan K.K. Method of forming carbon polymer film using plasma CVD
US7456429B2 (en) 2006-03-29 2008-11-25 Eastman Kodak Company Apparatus for atomic layer deposition
JP2007266464A (ja) 2006-03-29 2007-10-11 Hitachi Ltd 半導体集積回路装置の製造方法
US20070234955A1 (en) 2006-03-29 2007-10-11 Tokyo Electron Limited Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system
US7910494B2 (en) 2006-03-29 2011-03-22 Tokyo Electron Limited Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas thereto
US8951478B2 (en) 2006-03-30 2015-02-10 Applied Materials, Inc. Ampoule with a thermally conductive coating
US7737035B1 (en) 2006-03-31 2010-06-15 Novellus Systems, Inc. Dual seal deposition process chamber and process
US8012442B2 (en) 2006-03-31 2011-09-06 Tokyo Electron Limited Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition
US7780865B2 (en) 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
US7645484B2 (en) 2006-03-31 2010-01-12 Tokyo Electron Limited Method of forming a metal carbide or metal carbonitride film having improved adhesion
WO2007115257A2 (en) 2006-03-31 2007-10-11 Mesoscribe Technologies, Inc. Thermocouples
US20070237697A1 (en) 2006-03-31 2007-10-11 Tokyo Electron Limited Method of forming mixed rare earth oxide and aluminate films by atomic layer deposition
US20070287301A1 (en) 2006-03-31 2007-12-13 Huiwen Xu Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics
US8097300B2 (en) 2006-03-31 2012-01-17 Tokyo Electron Limited Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition
US7396491B2 (en) 2006-04-06 2008-07-08 Osram Sylvania Inc. UV-emitting phosphor and lamp containing same
JP4943047B2 (ja) 2006-04-07 2012-05-30 東京エレクトロン株式会社 処理装置及び処理方法
US7902074B2 (en) 2006-04-07 2011-03-08 Micron Technology, Inc. Simplified pitch doubling process flow
US7276447B1 (en) 2006-04-11 2007-10-02 Applied Materials, Inc. Plasma dielectric etch process including ex-situ backside polymer removal for low-dielectric constant material
JP4764241B2 (ja) 2006-04-17 2011-08-31 株式会社日立ハイテクノロジーズ ドライエッチング方法
US8399349B2 (en) 2006-04-18 2013-03-19 Air Products And Chemicals, Inc. Materials and methods of forming controlled void
US20070248767A1 (en) 2006-04-19 2007-10-25 Asm Japan K.K. Method of self-cleaning of carbon-based film
US7410852B2 (en) 2006-04-21 2008-08-12 International Business Machines Corporation Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors
US8187415B2 (en) 2006-04-21 2012-05-29 Applied Materials, Inc. Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone
FR2900276B1 (fr) 2006-04-25 2008-09-12 St Microelectronics Sa Depot peald d'un materiau a base de silicium
JP4345774B2 (ja) 2006-04-26 2009-10-14 ソニー株式会社 半導体装置の製造方法
US20070251456A1 (en) 2006-04-27 2007-11-01 Applied Materials, Inc., A Delaware Corporation Composite heater and chill plate
US20070252233A1 (en) 2006-04-28 2007-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US7537804B2 (en) 2006-04-28 2009-05-26 Micron Technology, Inc. ALD methods in which two or more different precursors are utilized with one or more reactants to form materials over substrates
US20070259778A1 (en) 2006-04-28 2007-11-08 Syracuse University Flameless heating system
US8231799B2 (en) 2006-04-28 2012-07-31 Applied Materials, Inc. Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone
US7547633B2 (en) 2006-05-01 2009-06-16 Applied Materials, Inc. UV assisted thermal processing
US7997795B2 (en) 2006-05-02 2011-08-16 Watlow Electric Manufacturing Company Temperature sensors and methods of manufacture thereof
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US20070261868A1 (en) 2006-05-12 2007-11-15 Gross James R Magnetic torque-limiting device and method
US20070266945A1 (en) 2006-05-16 2007-11-22 Asm Japan K.K. Plasma cvd apparatus equipped with plasma blocking insulation plate
JP2007311558A (ja) 2006-05-18 2007-11-29 Toshiba Corp 気相成長装置および気相成長基板の製造方法
US7875312B2 (en) 2006-05-23 2011-01-25 Air Products And Chemicals, Inc. Process for producing silicon oxide films for organoaminosilane precursors
EP2156886A3 (en) 2006-05-26 2011-12-14 INEOS Manufacturing Belgium NV Slurry phase polymerisation process
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
US7790634B2 (en) 2006-05-30 2010-09-07 Applied Materials, Inc Method for depositing and curing low-k films for gapfill and conformal film applications
JP2007324350A (ja) 2006-05-31 2007-12-13 Tokyo Electron Ltd 熱処理方法および熱処理装置、ならびに基板処理装置
US7623940B2 (en) 2006-06-02 2009-11-24 The Boeing Company Direct-manufactured duct interconnects
US20070277735A1 (en) 2006-06-02 2007-12-06 Nima Mokhlesi Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
EP2029790A1 (en) 2006-06-02 2009-03-04 L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing
US20070281105A1 (en) 2006-06-02 2007-12-06 Nima Mokhlesi Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US20070281082A1 (en) 2006-06-02 2007-12-06 Nima Mokhlesi Flash Heating in Atomic Layer Deposition
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US20080018004A1 (en) 2006-06-09 2008-01-24 Air Products And Chemicals, Inc. High Flow GaCl3 Delivery
JP5543203B2 (ja) 2006-06-16 2014-07-09 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 大気圧グロー放電プラズマを使用した原子層堆積の方法及び装置
JP5045000B2 (ja) 2006-06-20 2012-10-10 東京エレクトロン株式会社 成膜装置、ガス供給装置、成膜方法及び記憶媒体
US7625820B1 (en) 2006-06-21 2009-12-01 Novellus Systems, Inc. Method of selective coverage of high aspect ratio structures with a conformal film
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7554103B2 (en) 2006-06-26 2009-06-30 Applied Materials, Inc. Increased tool utilization/reduction in MWBC for UV curing chamber
US7833351B2 (en) 2006-06-26 2010-11-16 Applied Materials, Inc. Batch processing platform for ALD and CVD
US7494272B2 (en) 2006-06-27 2009-02-24 Applied Materials, Inc. Dynamic surface annealing using addressable laser array with pyrometry feedback
US7718045B2 (en) 2006-06-27 2010-05-18 Applied Materials, Inc. Ground shield with reentrant feature
US20080153311A1 (en) 2006-06-28 2008-06-26 Deenesh Padhi Method for depositing an amorphous carbon film with improved density and step coverage
US7867578B2 (en) 2006-06-28 2011-01-11 Applied Materials, Inc. Method for depositing an amorphous carbon film with improved density and step coverage
JP4847231B2 (ja) 2006-06-29 2011-12-28 ルネサスエレクトロニクス株式会社 電界に起因する剥離物による汚染を防止する装置
US7501355B2 (en) 2006-06-29 2009-03-10 Applied Materials, Inc. Decreasing the etch rate of silicon nitride by carbon addition
US20080003425A1 (en) 2006-06-29 2008-01-03 Spencer James T Systems and Methods of the Formation of Solid State Metal Boride and Oxide Coatings
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
WO2008004278A1 (fr) 2006-07-04 2008-01-10 Toshiba Mitsubishi-Electric Industrial Systems Corporation Procédé et dispositif de concentration / dilution de gaz spécifique
JP4193883B2 (ja) 2006-07-05 2008-12-10 住友電気工業株式会社 有機金属気相成長装置
JP5027573B2 (ja) 2006-07-06 2012-09-19 株式会社小松製作所 温度センサおよび温調装置
US7597523B2 (en) 2006-07-10 2009-10-06 Asyst Technologies, Inc. Variable lot size load port
KR100799735B1 (ko) 2006-07-10 2008-02-01 삼성전자주식회사 금속 산화물 형성 방법 및 이를 수행하기 위한 장치
KR100782484B1 (ko) 2006-07-13 2007-12-05 삼성전자주식회사 열처리 설비
JP4098338B2 (ja) 2006-07-20 2008-06-11 川崎重工業株式会社 ウェハ移載装置および基板移載装置
US7981815B2 (en) 2006-07-20 2011-07-19 Hitachi Kokusai Electric Inc. Semiconductor device producing method and substrate processing apparatus
US20080072821A1 (en) 2006-07-21 2008-03-27 Dalton Jeremic J Small volume symmetric flow single wafer ald apparatus
US7795160B2 (en) 2006-07-21 2010-09-14 Asm America Inc. ALD of metal silicate films
KR100791334B1 (ko) 2006-07-26 2008-01-07 삼성전자주식회사 원자층 증착법을 이용한 금속 산화막 형성 방법
FR2904328B1 (fr) 2006-07-27 2008-10-24 St Microelectronics Sa Depot par adsorption sous un champ electrique
US8187679B2 (en) 2006-07-29 2012-05-29 Lotus Applied Technology, Llc Radical-enhanced atomic layer deposition system and method
JP2008041734A (ja) 2006-08-02 2008-02-21 Sony Corp 半導体装置および半導体装置の製造方法
US7749879B2 (en) 2006-08-03 2010-07-06 Micron Technology, Inc. ALD of silicon films on germanium
JP2008039513A (ja) 2006-08-03 2008-02-21 Hitachi Metals Ltd 質量流量制御装置の流量制御補正方法
US7632354B2 (en) 2006-08-08 2009-12-15 Tokyo Electron Limited Thermal processing system with improved process gas flow and method for injecting a process gas into a thermal processing system
US7514375B1 (en) 2006-08-08 2009-04-07 Novellus Systems, Inc. Pulsed bias having high pulse frequency for filling gaps with dielectric material
GB0615722D0 (en) 2006-08-08 2006-09-20 Boc Group Plc Apparatus for conveying a waste stream
US8080282B2 (en) 2006-08-08 2011-12-20 Asm Japan K.K. Method for forming silicon carbide film containing oxygen
TW200814131A (en) 2006-08-11 2008-03-16 Schott Ag External electrode fluorescent lamp with optimized operating efficiency
US20080045030A1 (en) 2006-08-15 2008-02-21 Shigeru Tahara Substrate processing method, substrate processing system and storage medium
US7935942B2 (en) 2006-08-15 2011-05-03 Varian Semiconductor Equipment Associates, Inc. Technique for low-temperature ion implantation
US20110027999A1 (en) 2006-08-16 2011-02-03 Freescale Semiconductor, Inc. Etch method in the manufacture of an integrated circuit
KR100825787B1 (ko) 2006-08-18 2008-04-29 삼성전자주식회사 전하트랩층을 포함하는 반도체 메모리소자
WO2008023711A1 (en) 2006-08-23 2008-02-28 Horiba Stec, Co., Ltd. Integrated gas panel apparatus
JP4961895B2 (ja) 2006-08-25 2012-06-27 東京エレクトロン株式会社 ウェハ搬送装置、ウェハ搬送方法及び記憶媒体
JP4904995B2 (ja) 2006-08-28 2012-03-28 シンフォニアテクノロジー株式会社 ロードポート装置
US20080260963A1 (en) 2007-04-17 2008-10-23 Hyungsuk Alexander Yoon Apparatus and method for pre and post treatment of atomic layer deposition
US7690881B2 (en) 2006-08-30 2010-04-06 Asm Japan K.K. Substrate-processing apparatus with buffer mechanism and substrate-transferring apparatus
US20080063798A1 (en) 2006-08-30 2008-03-13 Kher Shreyas S Precursors and hardware for cvd and ald
US7611980B2 (en) 2006-08-30 2009-11-03 Micron Technology, Inc. Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
KR100753020B1 (ko) 2006-08-30 2007-08-30 한국화학연구원 원자층 증착법을 이용한 비휘발성 부유 게이트 메모리소자를 위한 나노적층체의 제조방법
JP4943780B2 (ja) 2006-08-31 2012-05-30 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US7544604B2 (en) 2006-08-31 2009-06-09 Micron Technology, Inc. Tantalum lanthanide oxynitride films
US20080057659A1 (en) 2006-08-31 2008-03-06 Micron Technology, Inc. Hafnium aluminium oxynitride high-K dielectric and metal gates
US20080241805A1 (en) 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
US7605030B2 (en) 2006-08-31 2009-10-20 Micron Technology, Inc. Hafnium tantalum oxynitride high-k dielectric and metal gates
KR100752190B1 (ko) 2006-09-04 2007-08-27 동부일렉트로닉스 주식회사 반도체 소자의 갭필 방법
JP5138253B2 (ja) 2006-09-05 2013-02-06 東京エレクトロン株式会社 アニール装置
DE502007004378D1 (de) 2006-09-06 2010-08-26 Kistler Holding Ag Temperatursensor mit bearbeitbarer Front
JP4762835B2 (ja) 2006-09-07 2011-08-31 東京エレクトロン株式会社 基板処理方法、基板処理装置、プログラムおよびプログラム記録媒体
KR100761857B1 (ko) 2006-09-08 2007-09-28 삼성전자주식회사 반도체 소자의 미세패턴 형성방법 및 이를 이용한 반도체소자의 제조방법
JP2008066159A (ja) 2006-09-08 2008-03-21 Noritsu Koki Co Ltd プラズマ発生装置およびそれを用いるワーク処理装置
TWI275658B (en) 2006-09-13 2007-03-11 Ind Tech Res Inst Method of improving surface frame resistance of a substrate
USD613829S1 (en) 2006-09-13 2010-04-13 Hayward Industries, Inc. Circular suction outlet assembly cover
JP2008072030A (ja) 2006-09-15 2008-03-27 Matsushita Electric Ind Co Ltd プラズマ処理装置、プラズマ処理装置の異常検出方法、及びプラズマ処理方法
US7789965B2 (en) 2006-09-19 2010-09-07 Asm Japan K.K. Method of cleaning UV irradiation chamber
US7976898B2 (en) 2006-09-20 2011-07-12 Asm Genitech Korea Ltd. Atomic layer deposition apparatus
JP2008074963A (ja) 2006-09-21 2008-04-03 Fujifilm Corp 組成物、膜、およびその製造方法
US7718553B2 (en) 2006-09-21 2010-05-18 Asm Japan K.K. Method for forming insulation film having high density
US7740437B2 (en) 2006-09-22 2010-06-22 Asm International N.V. Processing system with increased cassette storage capacity
EP2070164B9 (en) 2006-09-25 2012-04-11 Light Sources, Inc. Snap-lock connector
JP4814038B2 (ja) 2006-09-25 2011-11-09 株式会社日立国際電気 基板処理装置および反応容器の着脱方法
US7723648B2 (en) 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
USD634329S1 (en) 2006-09-26 2011-03-15 Margareta Wastrom Computer platform with forearm support
WO2008039943A2 (en) 2006-09-27 2008-04-03 Vserv Tech Wafer processing system with dual wafer robots capable of asynchronous motion
US7476291B2 (en) 2006-09-28 2009-01-13 Lam Research Corporation High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
TWI462179B (zh) 2006-09-28 2014-11-21 東京威力科創股份有限公司 用以形成氧化矽膜之成膜方法與裝置
JP2008085129A (ja) 2006-09-28 2008-04-10 Taiheiyo Cement Corp 基板載置装置
US7767262B2 (en) 2006-09-29 2010-08-03 Tokyo Electron Limited Nitrogen profile engineering in nitrided high dielectric constant films
JP2008089320A (ja) 2006-09-29 2008-04-17 Nicom Co Ltd 流量計測装置
DE102006046374B4 (de) 2006-09-29 2010-11-11 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Reduzieren der Lackvergiftung während des Strukturierens von Siliziumnitridschichten in einem Halbleiterbauelement
TW200822253A (en) 2006-10-02 2008-05-16 Matsushita Electric Industrial Co Ltd Component crimping apparatus control method, component crimping apparatus, and measuring tool
JP2008091761A (ja) 2006-10-04 2008-04-17 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
KR101427142B1 (ko) 2006-10-05 2014-08-07 에이에스엠 아메리카, 인코포레이티드 금속 규산염 막의 원자층 증착
TWD122456S1 (zh) 2006-10-10 2008-04-11 東京威力科創股份有限公司 半導體製造用腔室本體
US8986456B2 (en) 2006-10-10 2015-03-24 Asm America, Inc. Precursor delivery system
CN101522943B (zh) 2006-10-10 2013-04-24 Asm美国公司 前体输送系统
CN100451163C (zh) 2006-10-18 2009-01-14 中微半导体设备(上海)有限公司 用于半导体工艺件处理反应器的气体分布装置及其反应器
US20080099147A1 (en) 2006-10-26 2008-05-01 Nyi Oo Myo Temperature controlled multi-gas distribution assembly
JP2008108991A (ja) 2006-10-27 2008-05-08 Daihen Corp ワーク保持機構
US8795771B2 (en) 2006-10-27 2014-08-05 Sean T. Barry ALD of metal-containing films using cyclopentadienyl compounds
US7851232B2 (en) 2006-10-30 2010-12-14 Novellus Systems, Inc. UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
US7611751B2 (en) 2006-11-01 2009-11-03 Asm America, Inc. Vapor deposition of metal carbide films
US7727864B2 (en) 2006-11-01 2010-06-01 Asm America, Inc. Controlled composition using plasma-enhanced atomic layer deposition
US7888273B1 (en) 2006-11-01 2011-02-15 Novellus Systems, Inc. Density gradient-free gap fill
US7955516B2 (en) 2006-11-02 2011-06-07 Applied Materials, Inc. Etching of nano-imprint templates using an etch reactor
JP2008117903A (ja) 2006-11-02 2008-05-22 Toshiba Corp 半導体装置の製造方法
US20100001409A1 (en) 2006-11-09 2010-01-07 Nxp, B.V. Semiconductor device and method of manufacturing thereof
WO2008056742A1 (fr) 2006-11-09 2008-05-15 Ulvac, Inc. Procédé de fabrication de film barrière
US7749574B2 (en) 2006-11-14 2010-07-06 Applied Materials, Inc. Low temperature ALD SiO2
US20080179104A1 (en) 2006-11-14 2008-07-31 Smith International, Inc. Nano-reinforced wc-co for improved properties
US7776395B2 (en) 2006-11-14 2010-08-17 Applied Materials, Inc. Method of depositing catalyst assisted silicates of high-k materials
US7671134B2 (en) 2006-11-15 2010-03-02 Brady Worldwide, Inc. Compositions with improved adhesion to low surface energy substrates
US7976634B2 (en) 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
US20090223441A1 (en) 2006-11-22 2009-09-10 Chantal Arena High volume delivery system for gallium trichloride
US20080118334A1 (en) 2006-11-22 2008-05-22 Bonora Anthony C Variable pitch storage shelves
US7758698B2 (en) 2006-11-28 2010-07-20 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US20080124946A1 (en) 2006-11-28 2008-05-29 Air Products And Chemicals, Inc. Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films
US20080121177A1 (en) 2006-11-28 2008-05-29 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US7807575B2 (en) 2006-11-29 2010-10-05 Micron Technology, Inc. Methods to reduce the critical dimension of semiconductor devices
US7853364B2 (en) 2006-11-30 2010-12-14 Veeco Instruments, Inc. Adaptive controller for ion source
US20080132046A1 (en) 2006-12-04 2008-06-05 Varian Semiconductor Equipment Associates, Inc. Plasma Doping With Electronically Controllable Implant Angle
US20080178805A1 (en) 2006-12-05 2008-07-31 Applied Materials, Inc. Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
US7906174B1 (en) 2006-12-07 2011-03-15 Novellus Systems, Inc. PECVD methods for producing ultra low-k dielectric films using UV treatment
US20080142483A1 (en) 2006-12-07 2008-06-19 Applied Materials, Inc. Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills
EP2089897A2 (en) 2006-12-07 2009-08-19 Innovalight, Inc. Methods for creating a densified group iv semiconductor nanoparticle thin film
US20080202689A1 (en) 2006-12-08 2008-08-28 Tes Co., Ltd. Plasma processing apparatus
US7960236B2 (en) 2006-12-12 2011-06-14 Applied Materials, Inc. Phosphorus containing Si epitaxial layers in N-type source/drain junctions
US20080173238A1 (en) 2006-12-12 2008-07-24 Hitachi Kokusai Electric Inc. Substrate processing apparatus, method of manufacturing semiconductor device, and reaction vessel
EP2122687A1 (en) 2006-12-15 2009-11-25 Nxp B.V. Transistor device and method of manufacturing such a transistor device
TWD130499S1 (zh) 2006-12-15 2009-08-21 東京威力科創股份有限公司 電漿處理裝置的加熱平台用遮罩
US9789631B2 (en) 2006-12-19 2017-10-17 Koninklijke Philips N.V. System for and method of heating objects in a production line
US8178436B2 (en) 2006-12-21 2012-05-15 Intel Corporation Adhesion and electromigration performance at an interface between a dielectric and metal
KR20080058620A (ko) 2006-12-22 2008-06-26 세메스 주식회사 복수 개의 노즐들로 가스를 분할 공급하는 플라즈마 화학기상 증착 설비
US8120114B2 (en) 2006-12-27 2012-02-21 Intel Corporation Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate
JP4553891B2 (ja) 2006-12-27 2010-09-29 シャープ株式会社 半導体層製造方法
JP2008166360A (ja) 2006-12-27 2008-07-17 Hitachi Ltd 半導体集積回路装置
GB2445188B (en) 2006-12-29 2009-07-01 Thermo Fisher Scientific Inc Apparatus and method for generating nitrogen oxides
JP2008172083A (ja) 2007-01-12 2008-07-24 Sharp Corp 気相成長装置および気相成長方法
US7860379B2 (en) 2007-01-15 2010-12-28 Applied Materials, Inc. Temperature measurement and control of wafer support in thermal processing chamber
DE102007003416A1 (de) 2007-01-16 2008-07-17 Hansgrohe Ag Duschvorrichtung
JP5108489B2 (ja) 2007-01-16 2012-12-26 株式会社日立ハイテクノロジーズ プラズマ処理方法
DE102007002962B3 (de) 2007-01-19 2008-07-31 Qimonda Ag Verfahren zum Herstellen einer dielektrischen Schicht und zum Herstellen eines Kondensators
US7725012B2 (en) 2007-01-19 2010-05-25 Asm America, Inc. Movable radiant heat sources
KR20090106617A (ko) 2007-01-19 2009-10-09 어플라이드 머티어리얼스, 인코포레이티드 플라스마 함침 챔버
WO2008143716A2 (en) 2007-01-22 2008-11-27 Innovalight, Inc. In situ modification of group iv nanoparticles using gas phase nanoparticle reactors
JP4299863B2 (ja) 2007-01-22 2009-07-22 エルピーダメモリ株式会社 半導体装置の製造方法
JP5109376B2 (ja) 2007-01-22 2012-12-26 東京エレクトロン株式会社 加熱装置、加熱方法及び記憶媒体
US7550090B2 (en) 2007-01-23 2009-06-23 Applied Materials, Inc. Oxygen plasma clean to remove carbon species deposited on a glass dome surface
US7993457B1 (en) 2007-01-23 2011-08-09 Novellus Systems, Inc. Deposition sub-chamber with variable flow
US7833353B2 (en) 2007-01-24 2010-11-16 Asm Japan K.K. Liquid material vaporization apparatus for semiconductor processing apparatus
US20080173239A1 (en) 2007-01-24 2008-07-24 Yuri Makarov Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
US7598170B2 (en) 2007-01-26 2009-10-06 Asm America, Inc. Plasma-enhanced ALD of tantalum nitride films
WO2008091900A1 (en) 2007-01-26 2008-07-31 Applied Materials, Inc. Uv curing of pecvd-deposited sacrificial polymer films for air-gap ild
US7967996B2 (en) 2007-01-30 2011-06-28 Applied Materials, Inc. Process for wafer backside polymer removal and wafer front side photoresist removal
US20080179715A1 (en) 2007-01-30 2008-07-31 Micron Technology, Inc. Shallow trench isolation using atomic layer deposition during fabrication of a semiconductor device
JP4270284B2 (ja) 2007-01-30 2009-05-27 トヨタ自動車株式会社 車輪状態監視システムおよび車輪状態検出装置
DE102007004867B4 (de) 2007-01-31 2009-07-30 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Erhöhen der Zuverlässigkeit von kupferbasierten Metallisierungsstrukturen in einem Mikrostrukturbauelement durch Anwenden von Aluminiumnitrid
JP2008192643A (ja) 2007-01-31 2008-08-21 Tokyo Electron Ltd 基板処理装置
JP4896899B2 (ja) 2007-01-31 2012-03-14 東京エレクトロン株式会社 基板処理装置およびパーティクル付着防止方法
JP2008198629A (ja) 2007-02-08 2008-08-28 Mitsubishi Electric Corp 表面処理方法および太陽電池セル
US8043432B2 (en) 2007-02-12 2011-10-25 Tokyo Electron Limited Atomic layer deposition systems and methods
US7851360B2 (en) 2007-02-14 2010-12-14 Intel Corporation Organometallic precursors for seed/barrier processes and methods thereof
US7500397B2 (en) 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
USD576001S1 (en) 2007-02-16 2008-09-02 Brenda Brunderman Faux brick tool
JP2008202107A (ja) 2007-02-21 2008-09-04 Hitachi Kokusai Electric Inc 基板処理装置
WO2008102320A2 (en) 2007-02-21 2008-08-28 L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Methods for forming a ruthenium-based film on a substrate
JP4805862B2 (ja) 2007-02-21 2011-11-02 富士通セミコンダクター株式会社 基板処理装置、基板処理方法、及び半導体装置の製造方法
US7871198B2 (en) 2007-02-26 2011-01-18 Battelle Energy Alliance, Llc High-temperature thermocouples and related methods
US20080207007A1 (en) 2007-02-27 2008-08-28 Air Products And Chemicals, Inc. Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films
DE102007009914B4 (de) 2007-02-28 2010-04-22 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement in Form eines Feldeffekttransistors mit einem Zwischenschichtdielektrikumsmaterial mit erhöhter innerer Verspannung und Verfahren zur Herstellung desselben
KR101374583B1 (ko) 2007-03-01 2014-03-17 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ 셔터
US20080216077A1 (en) 2007-03-02 2008-09-04 Applied Materials, Inc. Software sequencer for integrated substrate processing system
US20080216958A1 (en) 2007-03-07 2008-09-11 Novellus Systems, Inc. Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same
US20080220619A1 (en) 2007-03-09 2008-09-11 Asm Japan K.K. Method for increasing mechanical strength of dielectric film by using sequential combination of two types of uv irradiation
US8012259B2 (en) 2007-03-09 2011-09-06 Hitachi Kokusai Electric, Inc. Substrate processing apparatus
US20080223130A1 (en) 2007-03-13 2008-09-18 Provina Incorporated Method and device for measuring density of a liquid
US7621672B2 (en) 2007-03-19 2009-11-24 Babcock & Wilcox Technical Services Y-12, Llc Thermocouple shield
US7833913B2 (en) 2007-03-20 2010-11-16 Tokyo Electron Limited Method of forming crystallographically stabilized doped hafnium zirconium based films
US8298379B2 (en) 2007-03-22 2012-10-30 Tokyo Electron Limited Method and apparatus for extending chamber component life in a substrate processing system
WO2008120459A1 (ja) 2007-03-22 2008-10-09 Panasonic Corporation プラズマ処理装置及びプラズマ処理方法
US7763869B2 (en) 2007-03-23 2010-07-27 Asm Japan K.K. UV light irradiating apparatus with liquid filter
US7435987B1 (en) 2007-03-27 2008-10-14 Intel Corporation Forming a type I heterostructure in a group IV semiconductor
JP5034594B2 (ja) 2007-03-27 2012-09-26 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
KR101119627B1 (ko) 2007-03-29 2012-03-07 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
US20080241387A1 (en) 2007-03-29 2008-10-02 Asm International N.V. Atomic layer deposition reactor
US7588749B2 (en) 2007-03-29 2009-09-15 Minimus Spine, Inc. Apparatus, method and system for delivering oxygen-ozone
US7651961B2 (en) 2007-03-30 2010-01-26 Tokyo Electron Limited Method for forming strained silicon nitride films and a device containing such films
US20080241384A1 (en) 2007-04-02 2008-10-02 Asm Genitech Korea Ltd. Lateral flow deposition apparatus and method of depositing film by using the apparatus
ITMI20070671A1 (it) 2007-04-02 2008-10-03 St Microelectronics Srl Architettura circuitale su base organica e relativo metodo fi realizzazione
US8235001B2 (en) 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
US8242028B1 (en) 2007-04-03 2012-08-14 Novellus Systems, Inc. UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement
KR100829759B1 (ko) 2007-04-04 2008-05-15 삼성에스디아이 주식회사 카바이드 유도 탄소를 이용한 카본나노튜브 혼성체, 이를포함하는 전자 방출원 및 상기 전자 방출원을 구비한 전자방출 소자
US7592212B2 (en) 2007-04-06 2009-09-22 Micron Technology, Inc. Methods for determining a dose of an impurity implanted in a semiconductor substrate
WO2008127935A1 (en) 2007-04-13 2008-10-23 The Board Of Trustees Of The University Of Illinois Metal complex compositions and methods for making metal-containing films
KR101181503B1 (ko) 2007-04-16 2012-09-10 가부시키가이샤 아루박 콘베이어 및 성막 장치와 그 보수관리 방법
KR101125086B1 (ko) 2007-04-17 2012-03-21 가부시키가이샤 알박 성막장치
US7807579B2 (en) 2007-04-19 2010-10-05 Applied Materials, Inc. Hydrogen ashing enhanced with water vapor and diluent gas
US20080257102A1 (en) 2007-04-20 2008-10-23 William Packer Mechanically retained motorcycle handlebar grips
US8357214B2 (en) 2007-04-26 2013-01-22 Trulite, Inc. Apparatus, system, and method for generating a gas from solid reactant pouches
JP4853374B2 (ja) 2007-04-27 2012-01-11 東京エレクトロン株式会社 塗布、現像装置及びその方法並びに記憶媒体
US7575968B2 (en) 2007-04-30 2009-08-18 Freescale Semiconductor, Inc. Inverse slope isolation and dual surface orientation integration
US7713874B2 (en) 2007-05-02 2010-05-11 Asm America, Inc. Periodic plasma annealing in an ALD-type process
KR100894098B1 (ko) 2007-05-03 2009-04-20 주식회사 하이닉스반도체 빠른 소거속도 및 향상된 리텐션 특성을 갖는 불휘발성메모리소자 및 그 제조방법
US20110067522A1 (en) 2007-05-08 2011-03-24 Lai Ching-Chuan Bicycle handlebar grip
US8110099B2 (en) 2007-05-09 2012-02-07 Contech Stormwater Solutions Inc. Stormwater filter assembly
DE102007022431A1 (de) 2007-05-09 2008-11-13 Leybold Optics Gmbh Behandlungssystem für flache Substrate
JP5103056B2 (ja) 2007-05-15 2012-12-19 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7750429B2 (en) 2007-05-15 2010-07-06 International Business Machines Corporation Self-aligned and extended inter-well isolation structure
GB0709723D0 (en) 2007-05-22 2007-06-27 Goodrich Control Sys Ltd Temperature sensing
US7874726B2 (en) 2007-05-24 2011-01-25 Asm America, Inc. Thermocouple
US20080299326A1 (en) 2007-05-30 2008-12-04 Asm Japan K.K. Plasma cvd apparatus having non-metal susceptor
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
CN101678974A (zh) 2007-05-31 2010-03-24 应用材料股份有限公司 延伸scara机械手臂连接的方法及设备
US7807578B2 (en) 2007-06-01 2010-10-05 Applied Materials, Inc. Frequency doubling using spacer mask
US20090017631A1 (en) 2007-06-01 2009-01-15 Bencher Christopher D Self-aligned pillar patterning using multiple spacer masks
US8084352B2 (en) 2007-06-04 2011-12-27 Panasonic Corporation Method of manufacturing semiconductor device
US7781352B2 (en) 2007-06-06 2010-08-24 Asm Japan K.K. Method for forming inorganic silazane-based dielectric film
US8142606B2 (en) 2007-06-07 2012-03-27 Applied Materials, Inc. Apparatus for depositing a uniform silicon film and methods for manufacturing the same
US20080302303A1 (en) 2007-06-07 2008-12-11 Applied Materials, Inc. Methods and apparatus for depositing a uniform silicon film with flow gradient designs
US20080305014A1 (en) 2007-06-07 2008-12-11 Hitachi Kokusai Electric Inc. Substrate processing apparatus
US7955650B2 (en) 2007-06-07 2011-06-07 Asm Japan K.K. Method for forming dielectric film using porogen gas
US8168375B2 (en) 2007-06-08 2012-05-01 Tokyo Electron Limited Patterning method
US7989354B2 (en) 2007-06-08 2011-08-02 Tokyo Electron Limited Patterning method
JP4427562B2 (ja) 2007-06-11 2010-03-10 株式会社東芝 パターン形成方法
US20080303744A1 (en) 2007-06-11 2008-12-11 Tokyo Electron Limited Plasma processing system, antenna, and use of plasma processing system
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
US20080314319A1 (en) 2007-06-19 2008-12-25 Memc Electronic Materials, Inc. Susceptor for improving throughput and reducing wafer damage
US8017182B2 (en) 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
USD575713S1 (en) 2007-06-21 2008-08-26 Ratcliffe Peter W Vehicle accessory
CN100590804C (zh) 2007-06-22 2010-02-17 中芯国际集成电路制造(上海)有限公司 原子层沉积方法以及形成的半导体器件
US20080314892A1 (en) 2007-06-25 2008-12-25 Graham Robert G Radiant shield
US8905124B2 (en) 2007-06-27 2014-12-09 Taiwan Semiconductor Manufacturing Company, Ltd. Temperature controlled loadlock chamber
US20090004875A1 (en) 2007-06-27 2009-01-01 Meihua Shen Methods of trimming amorphous carbon film for forming ultra thin structures on a substrate
KR101593352B1 (ko) 2007-06-28 2016-02-15 인티그리스, 인코포레이티드 이산화규소 간극 충전용 전구체
US20090000550A1 (en) 2007-06-29 2009-01-01 Applied Materials, Inc. Manifold assembly
US20090033907A1 (en) 2007-07-05 2009-02-05 Nikon Corporation Devices and methods for decreasing residual chucking forces
JP2009016672A (ja) 2007-07-06 2009-01-22 Tokyo Electron Ltd 半導体装置の製造方法、半導体装置、半導体製造装置及び記憶媒体。
US7875486B2 (en) 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
US8021514B2 (en) 2007-07-11 2011-09-20 Applied Materials, Inc. Remote plasma source for pre-treatment of substrates prior to deposition
US7501292B2 (en) 2007-07-19 2009-03-10 Asm Japan K.K. Method for managing UV irradiation for curing semiconductor substrate
US7651269B2 (en) 2007-07-19 2010-01-26 Lam Research Corporation Temperature probes having a thermally isolated tip
JP4900110B2 (ja) 2007-07-20 2012-03-21 東京エレクトロン株式会社 薬液気化タンク及び薬液処理システム
US7720560B2 (en) 2007-07-26 2010-05-18 International Business Machines Corporation Semiconductor manufacturing process monitoring
US8008166B2 (en) 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
USD596476S1 (en) 2007-07-27 2009-07-21 Daniel P. Welch Handle bar grip
US8004045B2 (en) 2007-07-27 2011-08-23 Panasonic Corporation Semiconductor device and method for producing the same
JP5058084B2 (ja) 2007-07-27 2012-10-24 株式会社半導体エネルギー研究所 光電変換装置の作製方法及びマイクロ波プラズマｃｖｄ装置
US8980756B2 (en) 2007-07-30 2015-03-17 Micron Technology, Inc. Methods for device fabrication using pitch reduction
US7910497B2 (en) 2007-07-30 2011-03-22 Applied Materials, Inc. Method of forming dielectric layers on a substrate and apparatus therefor
US8367227B2 (en) 2007-08-02 2013-02-05 Applied Materials, Inc. Plasma-resistant ceramics with controlled electrical resistivity
US8021968B2 (en) 2007-08-03 2011-09-20 Shin-Etsu Handotai Co., Ltd. Susceptor and method for manufacturing silicon epitaxial wafer
KR100893366B1 (ko) * 2007-08-08 2009-04-17 세메스 주식회사 반도체 제조 설비의 온도 제어 장치 및 그의 온도 제어방법
US20090041952A1 (en) 2007-08-10 2009-02-12 Asm Genitech Korea Ltd. Method of depositing silicon oxide films
JP2009044023A (ja) 2007-08-10 2009-02-26 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
WO2009023169A1 (en) 2007-08-10 2009-02-19 Nano Terra Inc. Structured smudge-resistant coatings and methods of making and using the same
TWI405295B (zh) 2007-08-13 2013-08-11 愛德牌工程有限公司 基板處理裝置及方法
GB0715854D0 (en) * 2007-08-15 2007-09-26 Enigma Diagnostics Ltd Apparatus and method for calibration of non-contact thermal sensors
KR20090018290A (ko) 2007-08-17 2009-02-20 에이에스엠지니텍코리아 주식회사 증착 장치
US8084372B2 (en) 2007-08-24 2011-12-27 Tokyo Electron Limited Substrate processing method and computer storage medium
US20090052498A1 (en) 2007-08-24 2009-02-26 Asm America, Inc. Thermocouple
US7745352B2 (en) 2007-08-27 2010-06-29 Applied Materials, Inc. Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process
JP2009076881A (ja) 2007-08-30 2009-04-09 Tokyo Electron Ltd 処理ガス供給システム及び処理装置
WO2009028619A1 (ja) 2007-08-30 2009-03-05 Tokyo Electron Limited 処理ガス供給システム及び処理装置
US8962101B2 (en) 2007-08-31 2015-02-24 Novellus Systems, Inc. Methods and apparatus for plasma-based deposition
JP2009060035A (ja) 2007-09-03 2009-03-19 Shinko Electric Ind Co Ltd 静電チャック部材、その製造方法及び静電チャック装置
US8334015B2 (en) 2007-09-05 2012-12-18 Intermolecular, Inc. Vapor based combinatorial processing
US7879250B2 (en) 2007-09-05 2011-02-01 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection
US7832354B2 (en) 2007-09-05 2010-11-16 Applied Materials, Inc. Cathode liner with wafer edge gas injection in a plasma reactor chamber
EP2188413B1 (en) 2007-09-07 2018-07-11 Fujifilm Manufacturing Europe B.V. Method for atomic layer deposition using an atmospheric pressure glow discharge plasma
CA122619S (en) 2007-10-09 2010-01-27 Silvano Breda Shower strainer
JP5347294B2 (ja) 2007-09-12 2013-11-20 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US20090075491A1 (en) 2007-09-13 2009-03-19 Tokyo Electron Limited Method for curing a dielectric film
JP4986784B2 (ja) 2007-09-18 2012-07-25 東京エレクトロン株式会社 処理システムの制御装置、処理システムの制御方法および制御プログラムを記憶した記憶媒体
KR101542267B1 (ko) 2007-09-18 2015-08-06 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 규소 함유 막의 형성 방법
US20120122319A1 (en) 2007-09-19 2012-05-17 Hironobu Shimizu Coating method for coating reaction tube prior to film forming process
JP2009076661A (ja) 2007-09-20 2009-04-09 Elpida Memory Inc 半導体装置の製造方法
US20090085156A1 (en) 2007-09-28 2009-04-02 Gilbert Dewey Metal surface treatments for uniformly growing dielectric layers
US20090084317A1 (en) 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
US7824743B2 (en) 2007-09-28 2010-11-02 Applied Materials, Inc. Deposition processes for titanium nitride barrier and aluminum
JP5236983B2 (ja) 2007-09-28 2013-07-17 東京エレクトロン株式会社 半導体装置の製造方法、半導体装置の製造装置、制御プログラム及びプログラム記憶媒体
JP2009088421A (ja) 2007-10-03 2009-04-23 Renesas Technology Corp 半導体装置の製造方法
US8041450B2 (en) 2007-10-04 2011-10-18 Asm Japan K.K. Position sensor system for substrate transfer robot
US20090090382A1 (en) 2007-10-05 2009-04-09 Asm Japan K.K. Method of self-cleaning of carbon-based film
US7776698B2 (en) 2007-10-05 2010-08-17 Applied Materials, Inc. Selective formation of silicon carbon epitaxial layer
US20090095221A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
US7867923B2 (en) 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
US7803722B2 (en) 2007-10-22 2010-09-28 Applied Materials, Inc Methods for forming a dielectric layer within trenches
US8070880B2 (en) 2007-10-22 2011-12-06 Hitachi Kokusai Electric, Inc. Substrate processing apparatus
US7541297B2 (en) 2007-10-22 2009-06-02 Applied Materials, Inc. Method and system for improving dielectric film quality for void free gap fill
US7939447B2 (en) 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
US7615831B2 (en) 2007-10-26 2009-11-10 International Business Machines Corporation Structure and method for fabricating self-aligned metal contacts
JP4730369B2 (ja) 2007-10-30 2011-07-20 株式会社デンソー ナビゲーションシステム
KR101369907B1 (ko) 2007-10-31 2014-03-04 주성엔지니어링(주) 트랜지스터 및 그 제조 방법
US8475650B2 (en) 2007-10-31 2013-07-02 China Petroleum & Chemical Corporation Pre-passivation process for a continuous reforming apparatus, and passivation process for a continuous reforming apparatus during the initial reaction
US7737039B2 (en) 2007-11-01 2010-06-15 Micron Technology, Inc. Spacer process for on pitch contacts and related structures
JP5192214B2 (ja) 2007-11-02 2013-05-08 東京エレクトロン株式会社 ガス供給装置、基板処理装置および基板処理方法
US7772097B2 (en) 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films
US20090124131A1 (en) 2007-11-09 2009-05-14 Electronic Controls Design Thermocouple adapter
US20090122458A1 (en) 2007-11-14 2009-05-14 Varian Semiconductor Epuipment Associated, Inc. Embossed electrostatic chuck
WO2009063755A1 (ja) 2007-11-14 2009-05-22 Tokyo Electron Limited プラズマ処理装置および半導体基板のプラズマ処理方法
CA123272S (en) 2007-11-19 2010-01-27 Silvano Breda Shower strainer
CA123273S (en) 2007-11-19 2010-01-27 Silvano Breda Shower strainer
US8272516B2 (en) 2007-11-19 2012-09-25 Caterpillar Inc. Fluid filter system
KR101412144B1 (ko) 2007-11-26 2014-06-26 삼성전자 주식회사 금속 배선의 제조 방법 및 이를 이용한 이미지 센서의 제조방법
KR101376336B1 (ko) 2007-11-27 2014-03-18 한국에이에스엠지니텍 주식회사 원자층 증착 장치
EP2065927B1 (en) 2007-11-27 2013-10-02 Imec Integration and manufacturing method of Cu germanide and Cu silicide as Cu capping layer
US8021723B2 (en) 2007-11-27 2011-09-20 Asm Japan K.K. Method of plasma treatment using amplitude-modulated RF power
KR20090055443A (ko) 2007-11-28 2009-06-02 주식회사 케이씨텍 원자층 증착 장치
CN101878518B (zh) 2007-11-28 2012-04-04 皇家飞利浦电子股份有限公司 电介质阻挡放电灯
US8060252B2 (en) 2007-11-30 2011-11-15 Novellus Systems, Inc. High throughput method of in transit wafer position correction in system using multiple robots
JP5464843B2 (ja) 2007-12-03 2014-04-09 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
US7651959B2 (en) 2007-12-03 2010-01-26 Asm Japan K.K. Method for forming silazane-based dielectric film
US20090139657A1 (en) 2007-12-04 2009-06-04 Applied Materials, Inc. Etch system
KR20100102106A (ko) 2007-12-06 2010-09-20 신에쯔 한도타이 가부시키가이샤 기상성장용 서셉터 및 기상성장 장치
US8440569B2 (en) 2007-12-07 2013-05-14 Cadence Design Systems, Inc. Method of eliminating a lithography operation
US7807566B2 (en) 2007-12-07 2010-10-05 Asm Japan K.K. Method for forming dielectric SiOCH film having chemical stability
US8047706B2 (en) * 2007-12-07 2011-11-01 Asm America, Inc. Calibration of temperature control system for semiconductor processing chamber
US8628616B2 (en) 2007-12-11 2014-01-14 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
KR100956247B1 (ko) 2007-12-13 2010-05-06 삼성엘이디 주식회사 금속유기 화학기상 증착장치
US8003174B2 (en) 2007-12-13 2011-08-23 Asm Japan K.K. Method for forming dielectric film using siloxane-silazane mixture
JP5307029B2 (ja) 2007-12-17 2013-10-02 株式会社オーク製作所 放電ランプ
US8092606B2 (en) 2007-12-18 2012-01-10 Asm Genitech Korea Ltd. Deposition apparatus
US20090155488A1 (en) 2007-12-18 2009-06-18 Asm Japan K.K. Shower plate electrode for plasma cvd reactor
CN102089861B (zh) 2007-12-19 2013-03-27 朗姆研究公司 低k电介质材料的汽相修复和孔密封
US20090159002A1 (en) 2007-12-19 2009-06-25 Kallol Bera Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution
US8137463B2 (en) 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
US7993057B2 (en) 2007-12-20 2011-08-09 Asm America, Inc. Redundant temperature sensor for semiconductor processing chambers
US8129029B2 (en) 2007-12-21 2012-03-06 Applied Materials, Inc. Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating
US8501637B2 (en) 2007-12-21 2013-08-06 Asm International N.V. Silicon dioxide thin films by ALD
JP3140111U (ja) 2007-12-21 2008-03-13 日本エー・エス・エム株式会社 半導体製造装置用ガス供給装置
WO2009085598A2 (en) 2007-12-21 2009-07-09 Lam Research Corporation Photoresist double patterning
US7678715B2 (en) 2007-12-21 2010-03-16 Applied Materials, Inc. Low wet etch rate silicon nitride film
US7989329B2 (en) 2007-12-21 2011-08-02 Applied Materials, Inc. Removal of surface dopants from a substrate
WO2009082763A2 (en) 2007-12-25 2009-07-02 Applied Materials, Inc. Method and apparatus for controlling plasma uniformity
KR101444873B1 (ko) 2007-12-26 2014-09-26 주성엔지니어링(주) 기판처리장치
JP5291928B2 (ja) 2007-12-26 2013-09-18 株式会社日立製作所 酸化物半導体装置およびその製造方法
US20090165721A1 (en) 2007-12-27 2009-07-02 Memc Electronic Materials, Inc. Susceptor with Support Bosses
US8333839B2 (en) 2007-12-27 2012-12-18 Synos Technology, Inc. Vapor deposition reactor
CN101911277B (zh) 2007-12-27 2012-04-04 朗姆研究公司 确定位置和偏移的装置和方法
US8496377B2 (en) 2007-12-31 2013-07-30 Covidien Lp Thermometer having molded probe component
KR101013413B1 (ko) 2008-01-07 2011-02-14 한국과학기술연구원 플라즈마 표면 처리를 이용한 투명 기체 차단 필름의 제조방법 및 이로부터 제조된 투명 기체 차단 필름
US7935940B1 (en) 2008-01-08 2011-05-03 Novellus Systems, Inc. Measuring in-situ UV intensity in UV cure tool
US8129288B2 (en) 2008-05-02 2012-03-06 Intermolecular, Inc. Combinatorial plasma enhanced deposition techniques
US8198567B2 (en) 2008-01-15 2012-06-12 Applied Materials, Inc. High temperature vacuum chuck assembly
CN101919041B (zh) 2008-01-16 2013-03-27 索绍股份有限公司 衬底固持器，衬底支撑设备，衬底处理设备以及使用所述衬底处理设备的衬底处理方法
US20090186571A1 (en) 2008-01-22 2009-07-23 Asm America, Inc. Air ventilation system
KR20100106608A (ko) 2008-01-31 2010-10-01 어플라이드 머티어리얼스, 인코포레이티드 폐쇄 회로 ｍｏｃｖｄ 증착 제어
KR20100109567A (ko) 2008-02-01 2010-10-08 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 베타-디케티미나토 리간드를 함유하는 새로운 금속 전구체
US20090203197A1 (en) 2008-02-08 2009-08-13 Hiroji Hanawa Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition
US7855153B2 (en) 2008-02-08 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101362811B1 (ko) 2008-02-11 2014-02-14 (주)소슬 배치식 기판 지지 장치 및 이를 구비하는 기판 처리 장치
KR100988390B1 (ko) 2008-02-11 2010-10-18 성균관대학교산학협력단 기판처리장치 및 기판처리방법
US20090200494A1 (en) 2008-02-11 2009-08-13 Varian Semiconductor Equipment Associates, Inc. Techniques for cold implantation of carbon-containing species
KR101043211B1 (ko) 2008-02-12 2011-06-22 신웅철 배치형 원자층 증착 장치
GB0802486D0 (en) 2008-02-12 2008-03-19 Gilbert Patrick C Warm water economy device
US7795045B2 (en) 2008-02-13 2010-09-14 Icemos Technology Ltd. Trench depth monitor for semiconductor manufacturing
US20090206056A1 (en) 2008-02-14 2009-08-20 Songlin Xu Method and Apparatus for Plasma Process Performance Matching in Multiple Wafer Chambers
JP2009194248A (ja) 2008-02-15 2009-08-27 Tokyo Electron Ltd パターン形成方法、半導体製造装置及び記憶媒体
JP5233734B2 (ja) 2008-02-20 2013-07-10 東京エレクトロン株式会社 ガス供給装置、成膜装置及び成膜方法
US20090214777A1 (en) 2008-02-22 2009-08-27 Demetrius Sarigiannis Multiple ampoule delivery systems
US20090214825A1 (en) 2008-02-26 2009-08-27 Applied Materials, Inc. Ceramic coating comprising yttrium which is resistant to a reducing plasma
JP5454467B2 (ja) 2008-02-27 2014-03-26 東京エレクトロン株式会社 プラズマエッチング処理装置およびプラズマエッチング処理方法
US8273178B2 (en) 2008-02-28 2012-09-25 Asm Genitech Korea Ltd. Thin film deposition apparatus and method of maintaining the same
US20090302002A1 (en) 2008-02-29 2009-12-10 Applied Materials, Inc. Method and apparatus for removing polymer from a substrate
KR100968132B1 (ko) 2008-02-29 2010-07-06 (주)얼라이드 테크 파인더즈 안테나 및 이를 구비한 반도체 장치
US7727866B2 (en) 2008-03-05 2010-06-01 Varian Semiconductor Equipment Associates, Inc. Use of chained implants in solar cells
USD585968S1 (en) 2008-03-06 2009-02-03 West Coast Washers, Inc. Pipe flashing
US7858533B2 (en) 2008-03-06 2010-12-28 Tokyo Electron Limited Method for curing a porous low dielectric constant dielectric film
US7977256B2 (en) 2008-03-06 2011-07-12 Tokyo Electron Limited Method for removing a pore-generating material from an uncured low-k dielectric film
EP2099067A1 (en) 2008-03-07 2009-09-09 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Process for adjusting the friction coefficient between surfaces of two solid objects
JP5507097B2 (ja) 2008-03-12 2014-05-28 富士フイルム株式会社 ペロブスカイト型酸化物とその製造方法、圧電体、圧電素子、液体吐出装置
GB2458507A (en) 2008-03-20 2009-09-23 Tecvac Ltd Oxidation of non ferrous metal components
US7695619B2 (en) 2008-03-21 2010-04-13 Pentair Filtration, Inc. Modular drinking water filtration system with adapter rings for replaceable cartridges to assure proper fit
GB0805328D0 (en) 2008-03-25 2008-04-30 Aviza Technologies Ltd Deposition of an amorphous layer
JP2009239082A (ja) 2008-03-27 2009-10-15 Tokyo Electron Ltd ガス供給装置、処理装置及び処理方法
US20090246399A1 (en) 2008-03-28 2009-10-01 Asm Japan K.K. Method for activating reactive oxygen species for cleaning carbon-based film deposition
US7816278B2 (en) 2008-03-28 2010-10-19 Tokyo Electron Limited In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition
US8252114B2 (en) 2008-03-28 2012-08-28 Tokyo Electron Limited Gas distribution system and method for distributing process gas in a processing system
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
USD590933S1 (en) 2008-03-31 2009-04-21 Mcp Industries, Inc. Vent cap device
JP2009252851A (ja) 2008-04-02 2009-10-29 Nikon Corp 露光装置及びデバイス製造方法
US7963736B2 (en) 2008-04-03 2011-06-21 Asm Japan K.K. Wafer processing apparatus with wafer alignment device
JP5007827B2 (ja) 2008-04-04 2012-08-22 信越化学工業株式会社 ダブルパターン形成方法
WO2009122751A1 (ja) 2008-04-04 2009-10-08 ダイセル化学工業株式会社 フォトレジスト用ポリオール化合物
US20090250955A1 (en) 2008-04-07 2009-10-08 Applied Materials, Inc. Wafer transfer blade
US8193388B2 (en) 2008-04-15 2012-06-05 American Air Liquide, Inc. Compounds for depositing tellurium-containing films
US20090315093A1 (en) 2008-04-16 2009-12-24 Asm America, Inc. Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds
WO2009129391A2 (en) 2008-04-17 2009-10-22 Applied Materials, Inc. Low temperature thin film transistor process, device property, and device stability improvement
US8741062B2 (en) 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
WO2009131902A2 (en) 2008-04-23 2009-10-29 Intermolecular, Inc. Yttrium and titanium high-k dielectric films
US20090269506A1 (en) 2008-04-24 2009-10-29 Seiji Okura Method and apparatus for cleaning of a CVD reactor
KR101596698B1 (ko) 2008-04-25 2016-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
US8383525B2 (en) 2008-04-25 2013-02-26 Asm America, Inc. Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
US8476368B2 (en) 2008-04-28 2013-07-02 Basf Se Low-k dielectrics obtainable by twin polymerization
JP5253875B2 (ja) 2008-04-28 2013-07-31 株式会社東芝 不揮発性半導体記憶装置、及びその製造方法
US20090269507A1 (en) 2008-04-29 2009-10-29 Sang-Ho Yu Selective cobalt deposition on copper surfaces
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
US7632549B2 (en) 2008-05-05 2009-12-15 Asm Japan K.K. Method of forming a high transparent carbon film
US20090280248A1 (en) 2008-05-06 2009-11-12 Asm America, Inc. Porous substrate holder with thinned portions
US8076237B2 (en) 2008-05-09 2011-12-13 Asm America, Inc. Method and apparatus for 3D interconnect
US20090277874A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Method and apparatus for removing polymer from a substrate
US8277670B2 (en) 2008-05-13 2012-10-02 Lam Research Corporation Plasma process with photoresist mask pretreatment
US20090286402A1 (en) 2008-05-13 2009-11-19 Applied Materials, Inc Method for critical dimension shrink using conformal pecvd films
KR20150017389A (ko) 2008-05-14 2015-02-16 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ 전력 전달을 위한 시간 분해된 조정 방식을 이용하는 펄스화된 플라즈마 처리를 위한 방법 및 장치
US8333842B2 (en) 2008-05-15 2012-12-18 Applied Materials, Inc. Apparatus for etching semiconductor wafers
US7514058B1 (en) 2008-05-22 2009-04-07 The Lata Group, Inc. Apparatus for on-site production of nitrate ions
US10041169B2 (en) 2008-05-27 2018-08-07 Picosun Oy System and method for loading a substrate holder carrying a batch of vertically placed substrates into an atomic layer deposition reactor
EP2128299B1 (en) 2008-05-29 2016-12-28 General Electric Technology GmbH Multilayer thermal barrier coating
US7622369B1 (en) 2008-05-30 2009-11-24 Asm Japan K.K. Device isolation technology on semiconductor substrate
US8298628B2 (en) 2008-06-02 2012-10-30 Air Products And Chemicals, Inc. Low temperature deposition of silicon-containing films
KR101711356B1 (ko) 2008-06-05 2017-02-28 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 란탄족 함유 전구체의 제조 및 란탄족 함유 필름의 증착 방법
US20110056513A1 (en) 2008-06-05 2011-03-10 Axel Hombach Method for treating surfaces, lamp for said method, and irradiation system having said lamp
JP2009295932A (ja) 2008-06-09 2009-12-17 Canon Inc 露光装置及びデバイス製造方法
JP5421551B2 (ja) 2008-06-11 2014-02-19 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US7915667B2 (en) 2008-06-11 2011-03-29 Qimonda Ag Integrated circuits having a contact region and methods for manufacturing the same
US20090308315A1 (en) 2008-06-13 2009-12-17 Asm International N.V. Semiconductor processing apparatus with improved thermal characteristics and method for providing the same
US7946762B2 (en) 2008-06-17 2011-05-24 Asm America, Inc. Thermocouple
KR20110031466A (ko) 2008-06-20 2011-03-28 어플라이드 머티어리얼스, 인코포레이티드 가스 분배 샤워헤드 스커트
US8827695B2 (en) 2008-06-23 2014-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer's ambiance control
US8726837B2 (en) 2008-06-23 2014-05-20 Applied Materials, Inc. Semiconductor process chamber vision and monitoring system
US20090325391A1 (en) 2008-06-30 2009-12-31 Asm International Nv Ozone and teos process for silicon oxide deposition
KR101036605B1 (ko) 2008-06-30 2011-05-24 세메스 주식회사 기판 지지 유닛 및 이를 이용한 매엽식 기판 연마 장치
US8291857B2 (en) 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
US8206506B2 (en) 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
JP2010021204A (ja) 2008-07-08 2010-01-28 Toshiba Corp 半導体装置及びその製造方法
US8702867B2 (en) 2008-07-08 2014-04-22 Jusung Engineering Co., Ltd. Gas distribution plate and substrate treating apparatus including the same
CN102084469B (zh) 2008-07-09 2013-05-01 东京毅力科创株式会社 等离子体处理装置
US20100012036A1 (en) 2008-07-11 2010-01-21 Hugo Silva Isolation for multi-single-wafer processing apparatus
US8058138B2 (en) 2008-07-17 2011-11-15 Micron Technology, Inc. Gap processing
US9997325B2 (en) 2008-07-17 2018-06-12 Verity Instruments, Inc. Electron beam exciter for use in chemical analysis in processing systems
USD614593S1 (en) 2008-07-21 2010-04-27 Asm Genitech Korea Ltd Substrate support for a semiconductor deposition apparatus
TWD136587S1 (zh) 2008-07-22 2010-08-21 東京威力科創股份有限公司 晶圓吸附板
US20100025796A1 (en) 2008-08-04 2010-02-04 Amir Massoud Dabiran Microchannel plate photocathode
KR20100015213A (ko) 2008-08-04 2010-02-12 삼성전기주식회사 Ｃｖｄ용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치
US8047711B2 (en) 2008-08-06 2011-11-01 Heinz Ploechinger Thermocouple vacuum gauge
US20100034719A1 (en) 2008-08-06 2010-02-11 Christian Dussarrat Novel lanthanide beta-diketonate precursors for lanthanide thin film deposition
US8328585B2 (en) 2008-08-07 2012-12-11 Texas Instruments Incorporated Modulated deposition process for stress control in thick TiN films
USD600223S1 (en) 2008-08-07 2009-09-15 Ravinder Aggarwal Susceptor ring
CN102160188B (zh) 2008-08-08 2016-10-26 康奈尔研究基金会股份有限公司 无机体相多结材料及其制备方法
US8129555B2 (en) 2008-08-12 2012-03-06 Air Products And Chemicals, Inc. Precursors for depositing silicon-containing films and methods for making and using same
US8263502B2 (en) 2008-08-13 2012-09-11 Synos Technology, Inc. Forming substrate structure by filling recesses with deposition material
JP5338335B2 (ja) 2008-08-13 2013-11-13 東京エレクトロン株式会社 搬送容器の開閉装置及びプローブ装置
KR101017170B1 (ko) 2008-08-13 2011-02-25 주식회사 동부하이텍 백 메탈 공정챔버
US8147648B2 (en) 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
JP5593472B2 (ja) 2008-08-27 2014-09-24 株式会社日立国際電気 基板処理装置および半導体デバイスの製造方法
JP5188326B2 (ja) 2008-08-28 2013-04-24 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、及び基板処理装置
EP2562290A3 (en) 2008-08-29 2016-10-19 Veeco Instruments Inc. Wafer carrier with varying thermal resistance
US8084104B2 (en) 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US20100055442A1 (en) 2008-09-03 2010-03-04 International Business Machines Corporation METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES
JP2010087467A (ja) 2008-09-04 2010-04-15 Tokyo Electron Ltd 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体
JP5107185B2 (ja) 2008-09-04 2012-12-26 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体
TW201011861A (en) 2008-09-04 2010-03-16 Nanya Technology Corp Method for fabricating integrated circuit
JP5276388B2 (ja) 2008-09-04 2013-08-28 東京エレクトロン株式会社 成膜装置及び基板処理装置
US9099513B2 (en) 2008-09-08 2015-08-04 Shibaura Mechatronics Corporation Substrate processing apparatus, and substrate processing method
JP5226438B2 (ja) 2008-09-10 2013-07-03 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法
USD643055S1 (en) 2008-09-11 2011-08-09 Asm Japan K.K. Heater block for use in a semiconductor processing tool
US8731706B2 (en) 2008-09-12 2014-05-20 Hitachi High-Technologies Corporation Vacuum processing apparatus
JP5511273B2 (ja) 2008-09-12 2014-06-04 株式会社日立国際電気 基板処理装置及び基板処理方法
US20100065758A1 (en) 2008-09-16 2010-03-18 Tokyo Electron Limited Dielectric material treatment system and method of operating
JP2010073822A (ja) 2008-09-17 2010-04-02 Tokyo Electron Ltd 成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体
US9711373B2 (en) 2008-09-22 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a gate dielectric for high-k metal gate devices
US20100075037A1 (en) 2008-09-22 2010-03-25 Marsh Eugene P Deposition Systems, ALD Systems, CVD Systems, Deposition Methods, ALD Methods and CVD Methods
JP2010077508A (ja) 2008-09-26 2010-04-08 Tokyo Electron Ltd 成膜装置及び基板処理装置
DE102008049353A1 (de) 2008-09-29 2010-04-08 Vat Holding Ag Vakuumventil
JP4638550B2 (ja) 2008-09-29 2011-02-23 東京エレクトロン株式会社 マスクパターンの形成方法、微細パターンの形成方法及び成膜装置
US9493875B2 (en) 2008-09-30 2016-11-15 Eugene Technology Co., Ltd. Shower head unit and chemical vapor deposition apparatus
US20100081293A1 (en) 2008-10-01 2010-04-01 Applied Materials, Inc. Methods for forming silicon nitride based film or silicon carbon based film
US20100090149A1 (en) 2008-10-01 2010-04-15 Compressor Engineering Corp. Poppet valve assembly, system, and apparatus for use in high speed compressor applications
JP2012504873A (ja) 2008-10-03 2012-02-23 ビーコ プロセス イクイップメント， インコーポレイテッド 気相エピタキシーシステム
TWD135511S1 (zh) 2008-10-03 2010-06-21 日本碍子股份有限公司 靜電夾頭
CN103337453B (zh) 2008-10-07 2017-10-24 应用材料公司 用于从蚀刻基板有效地移除卤素残余物的设备
KR100910206B1 (ko) * 2008-10-08 2009-07-30 (주)앤피에스 기판 처리 장치 및 기판 처리 방법
KR101491726B1 (ko) 2008-10-08 2015-02-17 주성엔지니어링(주) 반도체 소자의 갭필 방법
KR101627297B1 (ko) 2008-10-13 2016-06-03 한국에이에스엠지니텍 주식회사 플라즈마 처리부 및 이를 포함하는 증착 장치 및 증착 방법
WO2010045153A2 (en) 2008-10-14 2010-04-22 Applied Materials, Inc. Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (pecvd)
US8133555B2 (en) 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
KR20100041529A (ko) 2008-10-14 2010-04-22 삼성전자주식회사 초임계 유체를 이용한 물질막 증착장치, 이를 포함하는 물질막 증착 시스템 및 물질막 형성방법
US20110254052A1 (en) 2008-10-15 2011-10-20 Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University Hybrid Group IV/III-V Semiconductor Structures
JP2010097834A (ja) 2008-10-17 2010-04-30 Ushio Inc バックライトユニット
US7745346B2 (en) 2008-10-17 2010-06-29 Novellus Systems, Inc. Method for improving process control and film conformality of PECVD film
US8697189B2 (en) 2008-10-21 2014-04-15 Intevac, Inc. Method and apparatus for precision surface modification in nano-imprint lithography
US7964858B2 (en) 2008-10-21 2011-06-21 Applied Materials, Inc. Ultraviolet reflector with coolant gas holes and method
US8114734B2 (en) 2008-10-21 2012-02-14 United Microelectronics Corp. Metal capacitor and method of making the same
US7967913B2 (en) 2008-10-22 2011-06-28 Applied Materials, Inc. Remote plasma clean process with cycled high and low pressure clean steps
CN102197459A (zh) 2008-10-27 2011-09-21 应用材料股份有限公司 三元化合物的气相沉积方法
US8185443B2 (en) 2008-10-27 2012-05-22 Ebay, Inc. Method and apparatus for authorizing a payment via a remote device
WO2010053866A2 (en) 2008-11-07 2010-05-14 Asm America, Inc. Reaction chamber
JP5410074B2 (ja) 2008-11-07 2014-02-05 東京エレクトロン株式会社 オゾンガス濃度測定方法、オゾンガス濃度測定システム及び基板処理装置
JP5062143B2 (ja) 2008-11-10 2012-10-31 東京エレクトロン株式会社 成膜装置
US8524616B2 (en) 2008-11-12 2013-09-03 Microchip Technology Incorporated Method of nonstoichiometric CVD dielectric film surface passivation for film roughness control
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US8647722B2 (en) 2008-11-14 2014-02-11 Asm Japan K.K. Method of forming insulation film using plasma treatment cycles
JP2010153769A (ja) 2008-11-19 2010-07-08 Tokyo Electron Ltd 基板位置検出装置、基板位置検出方法、成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体
US20100130017A1 (en) 2008-11-21 2010-05-27 Axcelis Technologies, Inc. Front end of line plasma mediated ashing processes and apparatus
JP5225041B2 (ja) 2008-11-21 2013-07-03 京セラ株式会社 静電チャック
KR101004434B1 (ko) 2008-11-26 2010-12-28 세메스 주식회사 기판 지지 유닛과, 이를 이용한 기판 연마 장치 및 방법
US8714169B2 (en) 2008-11-26 2014-05-06 Semes Co. Ltd. Spin head, apparatus for treating substrate, and method for treating substrate
US8138676B2 (en) 2008-12-01 2012-03-20 Mills Robert L Methods and systems for dimmable fluorescent lighting using multiple frequencies
WO2010065473A2 (en) 2008-12-01 2010-06-10 Applied Materials, Inc. Gas distribution blocker apparatus
US8252659B2 (en) 2008-12-02 2012-08-28 Imec Method for producing interconnect structures for integrated circuits
US8262287B2 (en) 2008-12-08 2012-09-11 Asm America, Inc. Thermocouple
US8765233B2 (en) 2008-12-09 2014-07-01 Asm Japan K.K. Method for forming low-carbon CVD film for filling trenches
JP5390846B2 (ja) 2008-12-09 2014-01-15 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマクリーニング方法
JP5356005B2 (ja) 2008-12-10 2013-12-04 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
US8033771B1 (en) 2008-12-11 2011-10-11 Novellus Systems, Inc. Minimum contact area wafer clamping with gas flow for rapid wafer cooling
US7902009B2 (en) 2008-12-11 2011-03-08 Intel Corporation Graded high germanium compound films for strained semiconductor devices
US20100151206A1 (en) 2008-12-11 2010-06-17 Air Products And Chemicals, Inc. Method for Removal of Carbon From An Organosilicate Material
US8557712B1 (en) 2008-12-15 2013-10-15 Novellus Systems, Inc. PECVD flowable dielectric gap fill
WO2010071101A1 (ja) 2008-12-15 2010-06-24 東京エレクトロン株式会社 基板処理システム、基板処理方法およびプログラムを記憶した記憶媒体
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
DE112009003819T5 (de) 2008-12-23 2012-06-06 Mks Instruments, Inc. Containment- bzw. Sicherheitsbehältersystem für reaktive Chemikalien
KR20100075070A (ko) 2008-12-24 2010-07-02 삼성전자주식회사 비휘발성 메모리 장치의 제조 방법
US8816424B2 (en) 2008-12-26 2014-08-26 SK Hynix Inc. Nonvolatile memory device
JP2010157536A (ja) 2008-12-26 2010-07-15 Nuflare Technology Inc サセプタの製造方法
JP5295095B2 (ja) 2008-12-29 2013-09-18 ケー．シー．テック カンパニー リミテッド 原子層蒸着装置
US20100183825A1 (en) 2008-12-31 2010-07-22 Cambridge Nanotech Inc. Plasma atomic layer deposition system and method
KR101111063B1 (ko) 2008-12-31 2012-02-16 엘아이지에이디피 주식회사 기판합착장치
US7964490B2 (en) 2008-12-31 2011-06-21 Intel Corporation Methods of forming nickel sulfide film on a semiconductor device
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
US8216380B2 (en) 2009-01-08 2012-07-10 Asm America, Inc. Gap maintenance for opening to process chamber
US20100176513A1 (en) 2009-01-09 2010-07-15 International Business Machines Corporation Structure and method of forming metal interconnect structures in ultra low-k dielectrics
KR101660241B1 (ko) 2009-01-11 2016-09-27 어플라이드 머티어리얼스, 인코포레이티드 기판을 이동시키기 위한 시스템, 장치 및 방법
US8151814B2 (en) 2009-01-13 2012-04-10 Asm Japan K.K. Method for controlling flow and concentration of liquid precursor
USD606952S1 (en) 2009-01-16 2009-12-29 Asm Genitech Korea Ltd. Plasma inducing plate for semiconductor deposition apparatus
US8591659B1 (en) 2009-01-16 2013-11-26 Novellus Systems, Inc. Plasma clean method for deposition chamber
US8142862B2 (en) 2009-01-21 2012-03-27 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US7972980B2 (en) 2009-01-21 2011-07-05 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US7919416B2 (en) 2009-01-21 2011-04-05 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US8680650B2 (en) 2009-02-03 2014-03-25 Micron Technology, Inc. Capacitor structures having improved area efficiency
US8307472B1 (en) 2009-02-04 2012-11-13 Thomas Jason Saxon Light emitting diode system
US8405005B2 (en) 2009-02-04 2013-03-26 Mattson Technology, Inc. Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate
US8287648B2 (en) 2009-02-09 2012-10-16 Asm America, Inc. Method and apparatus for minimizing contamination in semiconductor processing chamber
US8663735B2 (en) 2009-02-13 2014-03-04 Advanced Technology Materials, Inc. In situ generation of RuO4 for ALD of Ru and Ru related materials
EP2397574A4 (en) 2009-02-16 2013-08-14 Mitsubishi Plastics Inc METHOD FOR PRODUCING A MULTILAYER GAS-REINFORCED FILM
US8692466B2 (en) 2009-02-27 2014-04-08 Mks Instruments Inc. Method and apparatus of providing power to ignite and sustain a plasma in a reactive gas generator
JP5216632B2 (ja) 2009-03-03 2013-06-19 東京エレクトロン株式会社 流体制御装置
CN102341891A (zh) 2009-03-04 2012-02-01 富士电机株式会社 成膜方法与成膜装置
JP2010205967A (ja) 2009-03-04 2010-09-16 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
KR101049801B1 (ko) 2009-03-05 2011-07-15 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조방법 및 이에 이용되는 원자층 증착장치
USD616390S1 (en) 2009-03-06 2010-05-25 Tokyo Electron Limited Quartz cover for manufacturing semiconductor wafers
USD616394S1 (en) 2009-03-06 2010-05-25 Tokyo Electron Limited Support of wafer boat for manufacturing semiconductor wafers
JP5221421B2 (ja) 2009-03-10 2013-06-26 東京エレクトロン株式会社 シャワーヘッド及びプラズマ処理装置
JP2010239115A (ja) 2009-03-10 2010-10-21 Hitachi Kokusai Electric Inc 基板処理装置
JP5337542B2 (ja) 2009-03-12 2013-11-06 株式会社堀場エステック マスフローメータ、マスフローコントローラ、それらを含むマスフローメータシステムおよびマスフローコントローラシステム
US8703624B2 (en) 2009-03-13 2014-04-22 Air Products And Chemicals, Inc. Dielectric films comprising silicon and methods for making same
JP5275094B2 (ja) 2009-03-13 2013-08-28 東京エレクトロン株式会社 基板処理方法
EP2230703A3 (en) 2009-03-18 2012-05-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus and manufacturing method of lighting device
KR101583608B1 (ko) 2009-03-24 2016-01-08 삼성전자 주식회사 무기계 실리콘 전구체를 이용한 실리콘 산화막의 형성 방법및 이를 이용한 반도체 장치의 제조 방법
US20120006489A1 (en) 2009-03-26 2012-01-12 Shogo Okita Plasma processing apparatus and plasma processing method
KR20110131220A (ko) 2009-03-27 2011-12-06 도쿄엘렉트론가부시키가이샤 금속 질화막의 성막 방법
US9004744B1 (en) 2009-03-30 2015-04-14 Techni-Blend, Inc. Fluid mixer using countercurrent injection
US8118484B2 (en) 2009-03-31 2012-02-21 Rosemount Inc. Thermocouple temperature sensor with connection detection circuitry
JP5292160B2 (ja) 2009-03-31 2013-09-18 東京エレクトロン株式会社 ガス流路構造体及び基板処理装置
JP5647792B2 (ja) 2009-04-01 2015-01-07 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． キャパシタ用容量絶縁膜の製造方法
US8197915B2 (en) 2009-04-01 2012-06-12 Asm Japan K.K. Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature
US8284601B2 (en) 2009-04-01 2012-10-09 Samsung Electronics Co., Ltd. Semiconductor memory device comprising three-dimensional memory cell array
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8402918B2 (en) 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8486191B2 (en) 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
JP5338443B2 (ja) 2009-04-14 2013-11-13 信越半導体株式会社 Ｓｏｉウェーハの製造方法
US8193075B2 (en) 2009-04-20 2012-06-05 Applied Materials, Inc. Remote hydrogen plasma with ion filter for terminating silicon dangling bonds
US8404499B2 (en) 2009-04-20 2013-03-26 Applied Materials, Inc. LED substrate processing
US9431237B2 (en) 2009-04-20 2016-08-30 Applied Materials, Inc. Post treatment methods for oxide layers on semiconductor devices
KR101519036B1 (ko) 2009-04-20 2015-05-12 어플라이드 머티어리얼스, 인코포레이티드 프로세스 챔버에 코팅하기 위한 장치 및 방법
SG174993A1 (en) 2009-04-21 2011-11-28 Applied Materials Inc Cvd apparatus for improved film thickness non-uniformity and particle performance
US20100266765A1 (en) 2009-04-21 2010-10-21 White Carl L Method and apparatus for growing a thin film onto a substrate
JP5204031B2 (ja) 2009-04-22 2013-06-05 Ｊｆｅ鋼板株式会社 嵌合式折板屋根材
US8071452B2 (en) 2009-04-27 2011-12-06 Asm America, Inc. Atomic layer deposition of hafnium lanthanum oxides
WO2010125810A1 (ja) 2009-04-28 2010-11-04 キヤノンアネルバ株式会社 半導体装置およびその製造方法
JP5136574B2 (ja) 2009-05-01 2013-02-06 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US9297705B2 (en) 2009-05-06 2016-03-29 Asm America, Inc. Smart temperature measuring device
US8100583B2 (en) 2009-05-06 2012-01-24 Asm America, Inc. Thermocouple
US8382370B2 (en) 2009-05-06 2013-02-26 Asm America, Inc. Thermocouple assembly with guarded thermocouple junction
KR20100032812A (ko) 2009-05-11 2010-03-26 주식회사 테스 화학기상증착 장치와 이를 이용한 기판 처리 시스템
US8962876B2 (en) 2009-05-15 2015-02-24 Wayne State University Thermally stable volatile film precursors
US7842622B1 (en) 2009-05-15 2010-11-30 Asm Japan K.K. Method of forming highly conformal amorphous carbon layer
JP5356516B2 (ja) 2009-05-20 2013-12-04 株式会社東芝 凹凸パターン形成方法
US8004198B2 (en) 2009-05-28 2011-08-23 Osram Sylvania Inc. Resetting an electronic ballast in the event of fault
KR101064210B1 (ko) 2009-06-01 2011-09-14 한국생산기술연구원 막증착 진공장비용 샤워헤드
WO2010141898A1 (en) 2009-06-05 2010-12-09 Andrew Llc Unprepared cable end coaxial connector
US20100317198A1 (en) 2009-06-12 2010-12-16 Novellus Systems, Inc. Remote plasma processing of interface surfaces
WO2010143306A1 (ja) 2009-06-12 2010-12-16 株式会社 東芝 不揮発性半導体記憶装置
USD652896S1 (en) 2009-06-17 2012-01-24 Neoperl Gmbh Faucet stream former
US8926502B2 (en) 2011-03-07 2015-01-06 Endochoice, Inc. Multi camera endoscope having a side service channel
US7825040B1 (en) 2009-06-22 2010-11-02 Asm Japan K.K. Method for depositing flowable material using alkoxysilane or aminosilane precursor
JP5285519B2 (ja) 2009-07-01 2013-09-11 パナソニック株式会社 半導体装置及びその製造方法
US20110006406A1 (en) 2009-07-08 2011-01-13 Imec Fabrication of porogen residues free and mechanically robust low-k materials
KR101110080B1 (ko) 2009-07-08 2012-03-13 주식회사 유진테크 확산판을 선택적으로 삽입설치하는 기판처리방법
US8382939B2 (en) 2009-07-13 2013-02-26 Applied Materials, Inc. Plasma processing chamber with enhanced gas delivery
WO2011007323A1 (en) 2009-07-14 2011-01-20 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Deposition of group iv metal-containing films at high temperature
JP2011023718A (ja) 2009-07-15 2011-02-03 Asm Japan Kk ＰＥＡＬＤによってＳｉ−Ｎ結合を有するストレス調節された誘電体膜を形成する方法
US8507389B2 (en) 2009-07-17 2013-08-13 Applied Materials, Inc. Methods for forming dielectric layers
IN2012DN00642A (zh) 2009-07-17 2015-08-21 Mitsui Chemicals Inc
JP5223804B2 (ja) 2009-07-22 2013-06-26 東京エレクトロン株式会社 成膜方法及び成膜装置
KR101245769B1 (ko) 2009-07-28 2013-03-20 엘아이지에이디피 주식회사 화학기상증착장치, 화학기상증착장치용 가이드부재 및 화학기상증착장치를 이용한 박막제조방법
US8071451B2 (en) 2009-07-29 2011-12-06 Axcelis Technologies, Inc. Method of doping semiconductors
JP5618505B2 (ja) 2009-07-30 2014-11-05 テクノクオーツ株式会社 石英ガラス部材の再生方法
US8119527B1 (en) 2009-08-04 2012-02-21 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
CN102498557A (zh) 2009-08-05 2012-06-13 应用材料公司 化学气相沉积设备
US8741788B2 (en) 2009-08-06 2014-06-03 Applied Materials, Inc. Formation of silicon oxide using non-carbon flowable CVD processes
US8258588B2 (en) 2009-08-07 2012-09-04 Taiwan Semiconductor Manufacturing Company, Ltd. Sealing layer of a field effect transistor
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8877655B2 (en) 2010-05-07 2014-11-04 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8883270B2 (en) 2009-08-14 2014-11-11 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species
US8563085B2 (en) 2009-08-18 2013-10-22 Samsung Electronics Co., Ltd. Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor
US7989365B2 (en) 2009-08-18 2011-08-02 Applied Materials, Inc. Remote plasma source seasoning
WO2011021539A1 (ja) 2009-08-20 2011-02-24 東京エレクトロン株式会社 プラズマ処理装置とプラズマ処理方法
KR101031226B1 (ko) 2009-08-21 2011-04-29 에이피시스템 주식회사 급속열처리 장치의 히터블록
US9117773B2 (en) 2009-08-26 2015-08-25 Asm America, Inc. High concentration water pulses for atomic layer deposition
US9117769B2 (en) 2009-08-27 2015-08-25 Tokyo Electron Limited Plasma etching method
USD634719S1 (en) 2009-08-27 2011-03-22 Ebara Corporation Elastic membrane for semiconductor wafer polishing apparatus
US20110117728A1 (en) 2009-08-27 2011-05-19 Applied Materials, Inc. Method of decontamination of process chamber after in-situ chamber clean
WO2011026064A1 (en) 2009-08-31 2011-03-03 The Penn State Research Foundation Improved plasma enhanced atomic layer deposition process
JP2011054708A (ja) 2009-09-01 2011-03-17 Elpida Memory Inc 絶縁膜およびその製造方法、半導体装置、ならびにデータ処理システム
JP5457109B2 (ja) 2009-09-02 2014-04-02 東京エレクトロン株式会社 プラズマ処理装置
US9012333B2 (en) 2009-09-09 2015-04-21 Spansion Llc Varied silicon richness silicon nitride formation
DE212010000009U1 (de) 2009-09-10 2011-05-26 LAM RESEARCH CORPORATION (Delaware Corporation), California Auswechselbare obere Kammerteile einer Plasmaverarbeitungsvorrichtung
US20110061810A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP2011082493A (ja) 2009-09-14 2011-04-21 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
KR20120063484A (ko) 2009-09-17 2012-06-15 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 장치용 가스 공급 기구
US8419959B2 (en) 2009-09-18 2013-04-16 Lam Research Corporation Clamped monolithic showerhead electrode
US8216640B2 (en) 2009-09-25 2012-07-10 Hermes-Epitek Corporation Method of making showerhead for semiconductor processing apparatus
JP5504793B2 (ja) 2009-09-26 2014-05-28 東京エレクトロン株式会社 熱処理装置及び冷却方法
TW201131005A (en) 2009-09-29 2011-09-16 Tokyo Electron Ltd Process for production of ni film
JP5467007B2 (ja) 2009-09-30 2014-04-09 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
EP2306497B1 (en) 2009-10-02 2012-06-06 Imec Method for manufacturing a low defect interface between a dielectric and a III/V compound
TW201131651A (en) 2009-10-05 2011-09-16 Univ Tohoku Low dielectric constant insulating film
US8544317B2 (en) 2009-10-09 2013-10-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor processing apparatus with simultaneously movable stages
US8173554B2 (en) 2009-10-14 2012-05-08 Asm Japan K.K. Method of depositing dielectric film having Si-N bonds by modified peald method
US8415259B2 (en) 2009-10-14 2013-04-09 Asm Japan K.K. Method of depositing dielectric film by modified PEALD method
US8465791B2 (en) 2009-10-16 2013-06-18 Msp Corporation Method for counting particles in a gas
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
US20110097901A1 (en) 2009-10-26 2011-04-28 Applied Materials, Inc. Dual mode inductively coupled plasma reactor with adjustable phase coil assembly
US9315896B2 (en) 2009-10-26 2016-04-19 Asm Ip Holding B.V. Synthesis and use of precursors for ALD of group VA element containing thin films
JP2013509535A (ja) 2009-10-29 2013-03-14 オーシャナ エナジー カンパニー エネルギー変換システムおよび方法
JP5434484B2 (ja) 2009-11-02 2014-03-05 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5451324B2 (ja) 2009-11-10 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8854734B2 (en) 2009-11-12 2014-10-07 Vela Technologies, Inc. Integrating optical system and methods
US8528224B2 (en) 2009-11-12 2013-09-10 Novellus Systems, Inc. Systems and methods for at least partially converting films to silicon oxide and/or improving film quality using ultraviolet curing in steam and densification of films using UV curing in ammonia
WO2011058069A2 (en) 2009-11-13 2011-05-19 Basf Se Method for purifying a chlorine supply
JP4948587B2 (ja) 2009-11-13 2012-06-06 東京エレクトロン株式会社 フォトレジスト塗布現像装置、基板搬送方法、インターフェイス装置
JP2011108766A (ja) * 2009-11-16 2011-06-02 Sumco Corp エピタキシャル成長装置のメンテナンス方法およびパイロメータを校正する方法、並びにパイロメータ校正用サセプタ
US8329585B2 (en) 2009-11-17 2012-12-11 Lam Research Corporation Method for reducing line width roughness with plasma pre-etch treatment on photoresist
US8367528B2 (en) 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
US8742665B2 (en) 2009-11-18 2014-06-03 Applied Materials, Inc. Plasma source design
US8771538B2 (en) 2009-11-18 2014-07-08 Applied Materials, Inc. Plasma source design
TWI442453B (zh) 2009-11-19 2014-06-21 羅門哈斯電子材料有限公司 形成電子裝置之方法
KR20110055912A (ko) 2009-11-20 2011-05-26 주식회사 하이닉스반도체 반도체 소자의 콘택홀 형성방법
AU329418S (en) 2009-11-23 2010-01-29 Pusher tool
KR101128267B1 (ko) 2009-11-26 2012-03-26 주식회사 테스 가스분사장치 및 이를 갖는 공정 챔버
JP5432686B2 (ja) 2009-12-03 2014-03-05 東京エレクトロン株式会社 プラズマ処理装置
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
US8685855B2 (en) 2009-12-11 2014-04-01 Sumco Corporation Tray for CVD and method for forming film using same
US20110139748A1 (en) 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US8328494B2 (en) 2009-12-15 2012-12-11 Varian Semiconductor Equipment Associates, Inc. In vacuum optical wafer heater for cryogenic processing
US20110159202A1 (en) 2009-12-29 2011-06-30 Asm Japan K.K. Method for Sealing Pores at Surface of Dielectric Layer by UV Light-Assisted CVD
KR20110078326A (ko) 2009-12-31 2011-07-07 삼성전자주식회사 유전막 형성 방법 및 이를 이용한 반도체 소자 제조 방법
USD653734S1 (en) 2010-01-08 2012-02-07 Bulk Tank, Inc. Screened gasket
JP2011144412A (ja) 2010-01-13 2011-07-28 Honda Motor Co Ltd プラズマ成膜装置
JP2011166106A (ja) 2010-01-13 2011-08-25 Renesas Electronics Corp 半導体装置の製造方法及び半導体装置
JP5549441B2 (ja) 2010-01-14 2014-07-16 東京エレクトロン株式会社 保持体機構、ロードロック装置、処理装置及び搬送機構
USD651291S1 (en) 2010-01-24 2011-12-27 Glv International (1995) Ltd. Duct connector ring
US20110183269A1 (en) 2010-01-25 2011-07-28 Hongbin Zhu Methods Of Forming Patterns, And Methods For Trimming Photoresist Features
US20110180233A1 (en) 2010-01-27 2011-07-28 Applied Materials, Inc. Apparatus for controlling temperature uniformity of a showerhead
US8480942B2 (en) 2010-01-27 2013-07-09 The Board Of Trustees Of The University Of Illinois Method of forming a patterned layer of a material on a substrate
JP5107372B2 (ja) 2010-02-04 2012-12-26 東京エレクトロン株式会社 熱処理装置、塗布現像処理システム、熱処理方法、塗布現像処理方法及びその熱処理方法又は塗布現像処理方法を実行させるためのプログラムを記録した記録媒体
US20120315113A1 (en) 2010-02-05 2012-12-13 Tokyo Electron Limited Substrate holder, substrate transfer apparatus, and substrate processing apparatus
KR101080604B1 (ko) 2010-02-09 2011-11-04 성균관대학교산학협력단 원자층 식각 장치 및 이를 이용한 식각 방법
JP2011162830A (ja) 2010-02-09 2011-08-25 Fuji Electric Co Ltd プラズマｃｖｄによる成膜方法、成膜済基板および成膜装置
US20110198034A1 (en) 2010-02-11 2011-08-18 Jennifer Sun Gas distribution showerhead with coating material for semiconductor processing
US8828182B2 (en) 2010-02-12 2014-09-09 Applied Materials, Inc. Process chamber gas flow improvements
US8562272B2 (en) 2010-02-16 2013-10-22 Lam Research Corporation Substrate load and unload mechanisms for high throughput
US8293658B2 (en) 2010-02-17 2012-10-23 Asm America, Inc. Reactive site deactivation against vapor deposition
WO2011106072A2 (en) 2010-02-23 2011-09-01 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Use of ruthenium tetroxide as a precursor and reactant for thin film depositions
KR101814096B1 (ko) 2010-02-23 2018-01-02 아사히 유키자이 가부시키가이샤 인라인형 유체 혼합 장치
US20110207332A1 (en) 2010-02-25 2011-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film coated process kits for semiconductor manufacturing tools
USD625977S1 (en) 2010-02-25 2010-10-26 Vertex Stone and Chinaware Ltd. Spacer tool
EP2362411A1 (en) 2010-02-26 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus and method for reactive ion etching
JP2011181681A (ja) 2010-03-01 2011-09-15 Mitsui Eng & Shipbuild Co Ltd 原子層堆積方法及び原子層堆積装置
US8241991B2 (en) 2010-03-05 2012-08-14 Asm Japan K.K. Method for forming interconnect structure having airgap
WO2011112617A2 (en) 2010-03-12 2011-09-15 Applied Materials, Inc. Atomic layer deposition chamber with multi inject
FR2957716B1 (fr) 2010-03-18 2012-10-05 Soitec Silicon On Insulator Procede de finition d'un substrat de type semi-conducteur sur isolant
US20110236201A1 (en) 2010-03-23 2011-09-29 Sumedhkumar Vyankatesh Shende Method and apparatus for radial exhaust gas turbine
US8039388B1 (en) 2010-03-24 2011-10-18 Taiwam Semiconductor Manufacturing Company, Ltd. Main spacer trim-back method for replacement gate process
US8709551B2 (en) 2010-03-25 2014-04-29 Novellus Systems, Inc. Smooth silicon-containing films
US8242460B2 (en) 2010-03-29 2012-08-14 Tokyo Electron Limited Ultraviolet treatment apparatus
US8988012B2 (en) 2010-03-31 2015-03-24 Tokyo Electron Limited Dielectric window for plasma processing apparatus, plasma processing apparatus and method for mounting dielectric window for plasma processing apparatus
CN102471885A (zh) 2010-04-01 2012-05-23 乔治洛德方法研究和开发液化空气有限公司 使用氨基金属与卤化金属前体组合的含金属氮化物的薄膜沉积
JP4733214B1 (ja) 2010-04-02 2011-07-27 東京エレクトロン株式会社 マスクパターンの形成方法及び半導体装置の製造方法
KR101211043B1 (ko) 2010-04-05 2012-12-12 에스케이하이닉스 주식회사 매립게이트를 구비한 반도체 장치 제조방법
JP5374638B2 (ja) 2010-04-09 2013-12-25 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
EP2378543B1 (en) 2010-04-14 2015-05-20 ASM Genitech Korea Ltd. Method of forming semiconductor patterns
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9076646B2 (en) 2010-04-15 2015-07-07 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US8728956B2 (en) 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
US8993460B2 (en) 2013-01-10 2015-03-31 Novellus Systems, Inc. Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactants
CZ303655B6 (cs) 2010-04-16 2013-01-30 Skutchanová@Zuzana Zpusob výroby brousicího povrchu skleneného kosmetického prípravku
US8852685B2 (en) 2010-04-23 2014-10-07 Lam Research Corporation Coating method for gas delivery system
TWI536451B (zh) 2010-04-26 2016-06-01 應用材料股份有限公司 使用具金屬系前驅物之化學氣相沉積與原子層沉積製程之ｎ型金氧半導體金屬閘極材料、製造方法及設備
KR101121858B1 (ko) 2010-04-27 2012-03-21 주식회사 하이닉스반도체 반도체 소자의 제조 방법
CH702999A1 (de) 2010-04-29 2011-10-31 Amt Ag Vorrichtung zur Beschichtung von Substraten mittels Hochgeschwindigkeitsflammspritzen.
US8707754B2 (en) 2010-04-30 2014-04-29 Applied Materials, Inc. Methods and apparatus for calibrating flow controllers in substrate processing systems
US8721798B2 (en) 2010-04-30 2014-05-13 Applied Materials, Inc. Methods for processing substrates in process systems having shared resources
WO2011137373A2 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Vertical inline cvd system
US20110265951A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system
US8241992B2 (en) 2010-05-10 2012-08-14 International Business Machines Corporation Method for air gap interconnect integration using photo-patternable low k material
US9441295B2 (en) 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
US20110294075A1 (en) 2010-05-25 2011-12-01 United Microelectronics Corp. Patterning method
MY162263A (en) 2010-05-28 2017-05-31 Exxonmobil Upstream Res Co Integrated adsorber head and valve design and swing adsorption methods related thereto
US8513129B2 (en) 2010-05-28 2013-08-20 Applied Materials, Inc. Planarizing etch hardmask to increase pattern density and aspect ratio
US8883025B2 (en) 2010-06-01 2014-11-11 Panasonic Corporation Plasma processing apparatus and plasma processing method
US8912353B2 (en) 2010-06-02 2014-12-16 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for depositing films comprising same
US8637390B2 (en) 2010-06-04 2014-01-28 Applied Materials, Inc. Metal gate structures and methods for forming thereof
JP5788975B2 (ja) 2010-06-09 2015-10-07 ザ プロクター アンド ギャンブルカンパニー 液体パーソナルケア組成物の半連続供給式製造
JP5525339B2 (ja) 2010-06-10 2014-06-18 ナブテスコ株式会社 ロボットアーム
TWI509695B (zh) 2010-06-10 2015-11-21 Ａｓｍ國際股份有限公司 使膜選擇性沈積於基板上的方法
JP2012004401A (ja) 2010-06-18 2012-01-05 Fujitsu Semiconductor Ltd 半導体装置の製造方法
US8778745B2 (en) 2010-06-29 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TW201213599A (en) 2010-07-02 2012-04-01 Matheson Tri Gas Inc Thin films and methods of making them using cyclohexasilane
KR20120003677A (ko) 2010-07-05 2012-01-11 삼성전자주식회사 반도체 장치 및 그의 형성 방법
WO2012005957A2 (en) 2010-07-07 2012-01-12 Advanced Technology Materials, Inc. Doping of zro2 for dram applications
JP5405667B2 (ja) 2010-07-22 2014-02-05 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JP5707766B2 (ja) 2010-07-28 2015-04-30 住友電気工業株式会社 サセプタおよび半導体製造装置
US8721791B2 (en) 2010-07-28 2014-05-13 Applied Materials, Inc. Showerhead support structure for improved gas flow
JP5490753B2 (ja) 2010-07-29 2014-05-14 東京エレクトロン株式会社 トレンチの埋め込み方法および成膜システム
US9443753B2 (en) 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
US8669185B2 (en) 2010-07-30 2014-03-11 Asm Japan K.K. Method of tailoring conformality of Si-containing film
JP2012038819A (ja) 2010-08-04 2012-02-23 Sanyo Electric Co Ltd 半導体レーザ装置および光装置
CN102959125B (zh) 2010-08-06 2015-03-04 三菱重工业株式会社 真空处理装置及等离子体处理方法
WO2012017653A1 (ja) 2010-08-06 2012-02-09 東京エレクトロン株式会社 基板処理システム、搬送モジュール、基板処理方法及び半導体素子の製造方法
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US9449858B2 (en) 2010-08-09 2016-09-20 Applied Materials, Inc. Transparent reflector plate for rapid thermal processing chamber
US8357608B2 (en) 2010-08-09 2013-01-22 International Business Machines Corporation Multi component dielectric layer
CN103338807B (zh) 2010-08-10 2016-06-29 加利福尼亚大学董事会 自动的流体输送系统及方法
US9783885B2 (en) 2010-08-11 2017-10-10 Unit Cell Diamond Llc Methods for producing diamond mass and apparatus therefor
KR101249999B1 (ko) 2010-08-12 2013-04-03 주식회사 디엠에스 화학기상증착 장치
KR101658492B1 (ko) 2010-08-13 2016-09-21 삼성전자주식회사 미세 패턴의 형성 방법 및 이를 이용한 반도체 소자의 제조 방법
US8535445B2 (en) 2010-08-13 2013-09-17 Veeco Instruments Inc. Enhanced wafer carrier
US9487600B2 (en) 2010-08-17 2016-11-08 Uchicago Argonne, Llc Ordered nanoscale domains by infiltration of block copolymers
USD649986S1 (en) 2010-08-17 2011-12-06 Ebara Corporation Sealing ring
US8685845B2 (en) 2010-08-20 2014-04-01 International Business Machines Corporation Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas
US8945305B2 (en) 2010-08-31 2015-02-03 Micron Technology, Inc. Methods of selectively forming a material using parylene coating
EP2426233B1 (en) 2010-09-03 2013-05-01 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Use of dialkyl monoalkoxy aluminum for the growth of Al2O3 thin films for photovoltaic applications
US8394466B2 (en) 2010-09-03 2013-03-12 Asm Japan K.K. Method of forming conformal film having si-N bonds on high-aspect ratio pattern
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
CN102383106B (zh) 2010-09-03 2013-12-25 甘志银 快速清除残余反应气体的金属有机物化学气相沉积反应腔体
US20120058630A1 (en) 2010-09-08 2012-03-08 Veeco Instruments Inc. Linear Cluster Deposition System
JP2012080095A (ja) 2010-09-10 2012-04-19 Elpida Memory Inc 半導体装置及びその製造方法
JP5560147B2 (ja) 2010-09-13 2014-07-23 東京エレクトロン株式会社 成膜方法及び半導体装置の製造方法
US8969210B2 (en) 2010-09-15 2015-03-03 Tokyo Electron Limited Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method
KR20120029291A (ko) 2010-09-16 2012-03-26 삼성전자주식회사 반도체 소자 및 그 제조 방법
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
US8524612B2 (en) 2010-09-23 2013-09-03 Novellus Systems, Inc. Plasma-activated deposition of conformal films
US8722548B2 (en) 2010-09-24 2014-05-13 International Business Machines Corporation Structures and techniques for atomic layer deposition
US20120073400A1 (en) 2010-09-29 2012-03-29 John Wang Handlebar grip assembly
US7994070B1 (en) 2010-09-30 2011-08-09 Tokyo Electron Limited Low-temperature dielectric film formation by chemical vapor deposition
US8076250B1 (en) 2010-10-06 2011-12-13 Applied Materials, Inc. PECVD oxide-nitride and oxide-silicon stacks for 3D memory application
TW201224190A (en) 2010-10-06 2012-06-16 Applied Materials Inc Atomic layer deposition of photoresist materials and hard mask precursors
FR2965888B1 (fr) 2010-10-08 2012-12-28 Alcatel Lucent Canalisation d'evacuation de gaz et procede d'evacuation associe
JP5638405B2 (ja) 2010-10-08 2014-12-10 パナソニック株式会社 基板のプラズマ処理方法
US8664127B2 (en) 2010-10-15 2014-03-04 Applied Materials, Inc. Two silicon-containing precursors for gapfill enhancing dielectric liner
WO2012054206A2 (en) 2010-10-19 2012-04-26 Applied Materials, Inc. Quartz showerhead for nanocure uv chamber
JP5636867B2 (ja) 2010-10-19 2014-12-10 富士通株式会社 半導体装置及び半導体装置の製造方法
USD654882S1 (en) 2010-10-21 2012-02-28 Tokyo Electron Limited Gas-separating plate for reactor for manufacturing semiconductor
US8192901B2 (en) 2010-10-21 2012-06-05 Asahi Glass Company, Limited Glass substrate-holding tool
USD655260S1 (en) 2010-10-21 2012-03-06 Tokyo Electron Limited Gas-separating plate for reactor for manufacturing semiconductor
KR101915138B1 (ko) 2010-10-21 2018-11-06 닛산 가가쿠 가부시키가이샤 Euv 리소그래피용 레지스트 상층막 형성 조성물
USD654884S1 (en) 2010-10-21 2012-02-28 Tokyo Electron Limited Top plate for reactor for manufacturing semiconductor
USD655261S1 (en) 2010-10-21 2012-03-06 Tokyo Electron Limited Gas-separating plate for reactor for manufacturing semiconductor
US8845806B2 (en) 2010-10-22 2014-09-30 Asm Japan K.K. Shower plate having different aperture dimensions and/or distributions
US8926788B2 (en) 2010-10-27 2015-01-06 Lam Research Ag Closed chamber for wafer wet processing
KR20130141550A (ko) 2010-10-27 2013-12-26 어플라이드 머티어리얼스, 인코포레이티드 포토레지스트 선폭 거칠기를 조절하기 위한 방법들 및 장치
JP4755307B1 (ja) 2010-10-28 2011-08-24 株式会社朝日工業社 クリーンルーム
JP5544343B2 (ja) 2010-10-29 2014-07-09 東京エレクトロン株式会社 成膜装置
KR20120047325A (ko) 2010-11-01 2012-05-11 삼성전자주식회사 3차원 반도체 장치 및 그 제조 방법
CN103168344A (zh) 2010-11-03 2013-06-19 应用材料公司 用于沉积碳化硅和碳氮化硅膜的设备和方法
KR101716113B1 (ko) 2010-11-03 2017-03-15 삼성전자 주식회사 반도체 소자 및 이의 제조 방법
US8470187B2 (en) 2010-11-05 2013-06-25 Asm Japan K.K. Method of depositing film with tailored comformality
WO2012061278A1 (en) 2010-11-05 2012-05-10 Synos Technology, Inc. Radical reactor with multiple plasma chambers
JP5722595B2 (ja) 2010-11-11 2015-05-20 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
US20120121823A1 (en) 2010-11-12 2012-05-17 Applied Materials, Inc. Process for lowering adhesion layer thickness and improving damage resistance for thin ultra low-k dielectric film
JP2013544938A (ja) 2010-11-22 2013-12-19 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 半導体インク、膜、コーティングされた基板および製造方法
KR20120055363A (ko) 2010-11-23 2012-05-31 삼성전자주식회사 커패시터 및 이를 포함하는 반도체 소자
KR20130055694A (ko) 2010-11-29 2013-05-28 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치
US8288758B2 (en) 2010-12-02 2012-10-16 International Business Machines Corporation SOI SiGe-base lateral bipolar junction transistor
JP5608758B2 (ja) 2010-12-09 2014-10-15 株式会社アルバック 有機薄膜形成装置
US20120149213A1 (en) 2010-12-09 2012-06-14 Lakshminarayana Nittala Bottom up fill in high aspect ratio trenches
KR20180065033A (ko) 2010-12-20 2018-06-15 에베 그룹 에. 탈너 게엠베하 웨이퍼의 장착을 위한 수용 수단
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
US20120156890A1 (en) 2010-12-20 2012-06-21 Applied Materials, Inc. In-situ low-k capping to improve integration damage resistance
JP5735304B2 (ja) 2010-12-21 2015-06-17 株式会社日立国際電気 基板処理装置、基板の製造方法、半導体デバイスの製造方法およびガス供給管
US8314034B2 (en) 2010-12-23 2012-11-20 Intel Corporation Feature size reduction
JP5675331B2 (ja) 2010-12-27 2015-02-25 東京エレクトロン株式会社 トレンチの埋め込み方法
JP2012138500A (ja) 2010-12-27 2012-07-19 Tokyo Electron Ltd タングステン膜又は酸化タングステン膜上への酸化シリコン膜の成膜方法及び成膜装置
US9790594B2 (en) 2010-12-28 2017-10-17 Asm Ip Holding B.V. Combination CVD/ALD method, source and pulse profile modification
JP5573666B2 (ja) 2010-12-28 2014-08-20 東京エレクトロン株式会社 原料供給装置及び成膜装置
US8901016B2 (en) 2010-12-28 2014-12-02 Asm Japan K.K. Method of forming metal oxide hardmask
USD655599S1 (en) 2010-12-29 2012-03-13 Bill Durham Wall or door mountable holder
FR2970110B1 (fr) 2010-12-29 2013-09-06 St Microelectronics Crolles 2 Procede de fabrication d'une couche de dielectrique polycristalline
US8883269B2 (en) 2010-12-30 2014-11-11 Applied Materials, Inc. Thin film deposition using microwave plasma
US8698107B2 (en) 2011-01-10 2014-04-15 Varian Semiconductor Equipment Associates, Inc. Technique and apparatus for monitoring ion mass, energy, and angle in processing systems
KR101306315B1 (ko) 2011-01-11 2013-09-09 주식회사 디엠에스 화학기상증착 장치
JP5236755B2 (ja) 2011-01-14 2013-07-17 東京エレクトロン株式会社 成膜装置及び成膜方法
JP5609663B2 (ja) 2011-01-18 2014-10-22 旭硝子株式会社 ガラス基板保持手段、およびそれを用いたｅｕｖマスクブランクスの製造方法
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
JP5782279B2 (ja) 2011-01-20 2015-09-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US8969823B2 (en) 2011-01-21 2015-03-03 Uchicago Argonne, Llc Microchannel plate detector and methods for their fabrication
US8398773B2 (en) 2011-01-21 2013-03-19 Asm International N.V. Thermal processing furnace and liner for the same
US8450191B2 (en) 2011-01-24 2013-05-28 Applied Materials, Inc. Polysilicon films by HDP-CVD
WO2012102892A2 (en) 2011-01-26 2012-08-02 Applied Materials, Inc. Plasma treatment of silicon nitride and silicon oxynitride
US8465811B2 (en) 2011-01-28 2013-06-18 Asm Japan K.K. Method of depositing film by atomic layer deposition with pulse-time-modulated plasma
JP2012164736A (ja) 2011-02-04 2012-08-30 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
US20120263876A1 (en) 2011-02-14 2012-10-18 Asm Ip Holding B.V. Deposition of silicon dioxide on hydrophobic surfaces
US8329599B2 (en) 2011-02-18 2012-12-11 Asm Japan K.K. Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen
US8563443B2 (en) 2011-02-18 2013-10-22 Asm Japan K.K. Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen
CN202259160U (zh) 2011-02-21 2012-05-30 盛陶盟(香港)有限公司 陶瓷玻璃合成电极及其荧光灯
US20120219824A1 (en) 2011-02-28 2012-08-30 Uchicago Argonne Llc Atomic layer deposition of super-conducting niobium silicide
JP2012195562A (ja) 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 異径基板用アタッチメントおよび基板処理装置ならびに基板若しくは半導体デバイスの製造方法
US9017457B2 (en) 2011-03-01 2015-04-28 Exxonmobil Upstream Research Company Apparatus and systems having a reciprocating valve head assembly and swing adsorption processes related thereto
CN102655086B (zh) 2011-03-03 2015-07-01 东京毅力科创株式会社 半导体器件的制造方法
US8466411B2 (en) 2011-03-03 2013-06-18 Asm Japan K.K. Calibration method of UV sensor for UV curing
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
ITMI20110401A1 (it) 2011-03-14 2012-09-15 Petroceramics S P A Metodo per l'infiltrazione di un materiale poroso con un secondo materiale e relativo impianto
US8501605B2 (en) 2011-03-14 2013-08-06 Applied Materials, Inc. Methods and apparatus for conformal doping
JP2012195513A (ja) 2011-03-17 2012-10-11 Tokyo Electron Ltd プラズマ処理装置
JP5820731B2 (ja) 2011-03-22 2015-11-24 株式会社日立国際電気 基板処理装置および固体原料補充方法
US8980418B2 (en) 2011-03-24 2015-03-17 Uchicago Argonne, Llc Sequential infiltration synthesis for advanced lithography
US9684234B2 (en) 2011-03-24 2017-06-20 Uchicago Argonne, Llc Sequential infiltration synthesis for enhancing multiple-patterning lithography
WO2012134605A1 (en) 2011-03-25 2012-10-04 Applied Materials, Inc. Method and apparatus for thermocouple installation or replacement in a substrate support
JP5203482B2 (ja) 2011-03-28 2013-06-05 株式会社小松製作所 加熱装置
KR101303422B1 (ko) 2011-03-28 2013-09-05 주식회사 엘지실트론 단결정 잉곳의 제조방법 및 이에 의해 제조된 단결정 잉곳과 웨이퍼
US20140020619A1 (en) 2011-03-31 2014-01-23 Benjamin Vincent Method for Growing a Monocrystalline Tin-Containing Semiconductor Material
KR101200720B1 (ko) 2011-03-31 2012-11-13 최대규 핫 배플판이 구비된 플라즈마 반응기 및 이를 이용한 기판 처리 방법
CN103635605B (zh) 2011-04-07 2017-03-08 皮考逊公司 具有等离子体源的原子层沉积
US8647993B2 (en) 2011-04-11 2014-02-11 Novellus Systems, Inc. Methods for UV-assisted conformal film deposition
US8900402B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
CN106300851B (zh) 2011-04-12 2019-12-17 巨石风力股份有限公司 气隙控制系统和方法
US8298951B1 (en) 2011-04-13 2012-10-30 Asm Japan K.K. Footing reduction using etch-selective layer
US8371567B2 (en) 2011-04-13 2013-02-12 Novellus Systems, Inc. Pedestal covers
WO2012141067A1 (ja) 2011-04-15 2012-10-18 タツモ株式会社 ウエハ交換装置およびウエハ支持用ハンド
TW201243030A (en) 2011-04-20 2012-11-01 Applied Materials Inc Selective silicon nitride etch
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
JP5955062B2 (ja) 2011-04-25 2016-07-20 東京エレクトロン株式会社 プラズマ処理装置
US8492170B2 (en) 2011-04-25 2013-07-23 Applied Materials, Inc. UV assisted silylation for recovery and pore sealing of damaged low K films
US8592005B2 (en) 2011-04-26 2013-11-26 Asm Japan K.K. Atomic layer deposition for controlling vertical film growth
USD655055S1 (en) 2011-04-28 2012-02-28 Carolyn Grace Toll Pet outfit
US9165804B2 (en) 2011-04-29 2015-10-20 Applied Materials, Inc. Methods of cooling process chamber components
DE102011081749B4 (de) 2011-04-29 2016-04-14 Von Ardenne Gmbh Substratbehandlungsanlage
US8927066B2 (en) 2011-04-29 2015-01-06 Applied Materials, Inc. Method and apparatus for gas delivery
US8746284B2 (en) 2011-05-11 2014-06-10 Intermolecular, Inc. Apparatus and method for multiple symmetrical divisional gas distribution
US9218962B2 (en) 2011-05-19 2015-12-22 Globalfoundries Inc. Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silane precursor
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US8771807B2 (en) 2011-05-24 2014-07-08 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for making and using same
JP2012244180A (ja) 2011-05-24 2012-12-10 Macronix Internatl Co Ltd 多層接続構造及びその製造方法
JP5630379B2 (ja) 2011-05-26 2014-11-26 東京エレクトロン株式会社 温度測定装置、温度測定方法、記憶媒体及び熱処理装置
JP5730670B2 (ja) 2011-05-27 2015-06-10 株式会社Adeka 酸化モリブデンを含有する薄膜の製造方法、及び酸化モリブデンを含有する薄膜の形成用原料
US20120304935A1 (en) 2011-05-31 2012-12-06 Oosterlaken Theodorus G M Bubbler assembly and method for vapor flow control
JP2013012719A (ja) 2011-05-31 2013-01-17 Hitachi Kokusai Electric Inc 基板処理装置および基板処理方法
US9136180B2 (en) 2011-06-01 2015-09-15 Asm Ip Holding B.V. Process for depositing electrode with high effective work function
US8692319B2 (en) 2011-06-03 2014-04-08 Infineon Technologies Austria Ag Lateral trench MESFET
KR101995602B1 (ko) 2011-06-03 2019-07-02 노벨러스 시스템즈, 인코포레이티드 상호접속을 위한 캡핑층들을 함유하는 금속 및 실리콘
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US8927318B2 (en) 2011-06-14 2015-01-06 International Business Machines Corporation Spalling methods to form multi-junction photovoltaic structure
TW201308021A (zh) 2011-06-15 2013-02-16 應用材料股份有限公司 調控增強的電子自旋以控制光阻線寬粗糙度之方法與設備
US9175392B2 (en) 2011-06-17 2015-11-03 Intermolecular, Inc. System for multi-region processing
US20120318457A1 (en) 2011-06-17 2012-12-20 Son Nguyen Materials and coatings for a showerhead in a processing system
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US8766519B2 (en) 2011-06-28 2014-07-01 Federal-Mogul Ignition Company Electrode material for a spark plug
US8450212B2 (en) 2011-06-28 2013-05-28 International Business Machines Corporation Method of reducing critical dimension process bias differences between narrow and wide damascene wires
JP5802752B2 (ja) 2011-07-01 2015-11-04 太陽誘電ケミカルテクノロジー株式会社 プライマー組成物、該組成物から成るプライマー層を含む構造体、及び該構造体の製造方法
WO2013005481A1 (ja) 2011-07-05 2013-01-10 エピクルー株式会社 サセプタ装置及びこれを備えた成膜装置
JP5377587B2 (ja) 2011-07-06 2013-12-25 東京エレクトロン株式会社 アンテナ、プラズマ処理装置及びプラズマ処理方法
DE112012002871T5 (de) 2011-07-06 2014-03-20 Wayne State University Atomlagenabscheidung von dünnen Filmen an Übergangsmetall
US10707082B2 (en) 2011-07-06 2020-07-07 Asm International N.V. Methods for depositing thin films comprising indium nitride by atomic layer deposition
US8962400B2 (en) 2011-07-07 2015-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ doping of arsenic for source and drain epitaxy
US20130011984A1 (en) 2011-07-07 2013-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Using Hexachlorodisilane as a Silicon Precursor for Source/Drain Epitaxy
US20130014697A1 (en) 2011-07-12 2013-01-17 Asm Japan K.K. Container Having Multiple Compartments Containing Liquid Material for Multiple Wafer-Processing Chambers
WO2013008422A1 (ja) 2011-07-12 2013-01-17 パナソニック株式会社 窒化物半導体装置およびその製造方法
US9018567B2 (en) 2011-07-13 2015-04-28 Asm International N.V. Wafer processing apparatus with heated, rotating substrate support
JP5940342B2 (ja) 2011-07-15 2016-06-29 東京エレクトロン株式会社 基板搬送装置、基板処理システムおよび基板搬送方法、ならびに記憶媒体
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US9630127B2 (en) 2011-07-19 2017-04-25 Hayward Industries, Inc. Filter vessel assembly and related methods of use
US8617411B2 (en) 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US8778448B2 (en) 2011-07-21 2014-07-15 International Business Machines Corporation Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
JP5789149B2 (ja) 2011-07-21 2015-10-07 Ｊｓｗアフティ株式会社 原子層成長方法及び原子層成長装置
CN103688339B (zh) 2011-07-22 2016-09-28 应用材料公司 用于ald/cvd工艺的反应物输送系统
US8716072B2 (en) 2011-07-25 2014-05-06 International Business Machines Corporation Hybrid CMOS technology with nanowire devices and double gated planar devices
US20130025538A1 (en) 2011-07-27 2013-01-31 Applied Materials, Inc. Methods and apparatus for deposition processes
US8551892B2 (en) 2011-07-27 2013-10-08 Asm Japan K.K. Method for reducing dielectric constant of film using direct plasma of hydrogen
US20130025786A1 (en) 2011-07-28 2013-01-31 Vladislav Davidkovich Systems for and methods of controlling time-multiplexed deep reactive-ion etching processes
US20130032085A1 (en) 2011-08-04 2013-02-07 Applied Materials, Inc. Plasma assisted hvpe chamber design
CN102931083B (zh) 2011-08-10 2015-07-29 中芯国际集成电路制造(北京)有限公司 半导体器件及其制造方法
US9184100B2 (en) 2011-08-10 2015-11-10 United Microelectronics Corp. Semiconductor device having strained fin structure and method of making the same
US20130040481A1 (en) 2011-08-12 2013-02-14 Genesis Technology Usa, Inc. U-Channel Coaxial F-Connector
TWI450999B (zh) 2011-08-19 2014-09-01 Tokyo Electron Ltd Ge-Sb-Te film forming method, Ge-Te film forming method, Sb-Te film forming method and memory medium
US8614047B2 (en) 2011-08-26 2013-12-24 International Business Machines Corporation Photodecomposable bases and photoresist compositions
TWI492298B (zh) 2011-08-26 2015-07-11 應用材料股份有限公司 雙重圖案化蝕刻製程
US20130048606A1 (en) 2011-08-31 2013-02-28 Zhigang Mao Methods for in-situ chamber dry clean in photomask plasma etching processing chamber
KR101326518B1 (ko) 2011-09-02 2013-11-07 엘지이노텍 주식회사 조명 장치
US20130217241A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Treatments for decreasing etch rates after flowable deposition of silicon-carbon-and-nitrogen-containing layers
US20130217239A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Flowable silicon-and-carbon-containing layers for semiconductor processing
US20130217240A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Flowable silicon-carbon-nitrogen layers for semiconductor processing
US20130064973A1 (en) 2011-09-09 2013-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Chamber Conditioning Method
US8476743B2 (en) 2011-09-09 2013-07-02 International Business Machines Corporation C-rich carbon boron nitride dielectric films for use in electronic devices
US20130217243A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Doping of dielectric layers
JP2013062361A (ja) 2011-09-13 2013-04-04 Tokyo Electron Ltd 熱処理装置、温度制御システム、熱処理方法、温度制御方法及びその熱処理方法又はその温度制御方法を実行させるためのプログラムを記録した記録媒体
US9177872B2 (en) 2011-09-16 2015-11-03 Micron Technology, Inc. Memory cells, semiconductor devices, systems including such cells, and methods of fabrication
JP1438745S (zh) 2011-09-20 2015-04-06
JP1438319S (zh) 2011-09-20 2015-04-06
US20130068970A1 (en) 2011-09-21 2013-03-21 Asm Japan K.K. UV Irradiation Apparatus Having UV Lamp-Shared Multiple Process Stations
KR102084901B1 (ko) 2011-09-23 2020-03-05 노벨러스 시스템즈, 인코포레이티드 플라즈마 활성화된 컨포멀 유전체 막 증착
JP5549655B2 (ja) 2011-09-26 2014-07-16 株式会社安川電機 ハンドおよびロボット
KR101913891B1 (ko) 2011-09-27 2018-10-31 도쿄엘렉트론가부시키가이샤 플라즈마 에칭 방법 및 반도체 장치의 제조 방법
US8993072B2 (en) 2011-09-27 2015-03-31 Air Products And Chemicals, Inc. Halogenated organoaminosilane precursors and methods for depositing films comprising same
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
US9644796B2 (en) 2011-09-29 2017-05-09 Applied Materials, Inc. Methods for in-situ calibration of a flow controller
JP6042656B2 (ja) 2011-09-30 2016-12-14 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
USD709537S1 (en) 2011-09-30 2014-07-22 Tokyo Electron Limited Focusing ring
USD709536S1 (en) 2011-09-30 2014-07-22 Tokyo Electron Limited Focusing ring
US8569184B2 (en) 2011-09-30 2013-10-29 Asm Japan K.K. Method for forming single-phase multi-element film by PEALD
US10240250B2 (en) 2011-10-03 2019-03-26 Asml Netherlands B.V. Method to provide a patterned orientation template for a self-assemblable polymer
US8551891B2 (en) 2011-10-04 2013-10-08 Applied Materials, Inc. Remote plasma burn-in
TWI719473B (zh) 2011-10-05 2021-02-21 美商應用材料股份有限公司 對稱電漿處理腔室
TW201331408A (zh) 2011-10-07 2013-08-01 Tokyo Electron Ltd 電漿處理裝置
JP6295198B2 (ja) 2011-10-10 2018-03-14 ブルーワー サイエンス アイ エヌ シー． リソグラフ処理のためのスピンオン炭素組成物
JP6202798B2 (ja) 2011-10-12 2017-09-27 エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． 酸化アンチモン膜の原子層堆積
US9281231B2 (en) 2011-10-12 2016-03-08 Ferrotec (Usa) Corporation Non-contact magnetic drive assembly with mechanical stop elements
TWI541928B (zh) 2011-10-14 2016-07-11 晶元光電股份有限公司 晶圓載具
US8759234B2 (en) 2011-10-17 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Deposited material and method of formation
US9109754B2 (en) 2011-10-19 2015-08-18 Applied Materials, Inc. Apparatus and method for providing uniform flow of gas
USD695240S1 (en) 2011-10-20 2013-12-10 Tokyo Electron Limited Arm for wafer transportation for manufacturing semiconductor
US9341296B2 (en) 2011-10-27 2016-05-17 Asm America, Inc. Heater jacket for a fluid line
US9096931B2 (en) 2011-10-27 2015-08-04 Asm America, Inc Deposition valve assembly and method of heating the same
US20130107415A1 (en) 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9574268B1 (en) 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
US8927428B2 (en) 2011-11-04 2015-01-06 E I Du Pont De Nemours And Company Process of forming an aluminum p-doped surface region of an n-doped semiconductor substrate
TWI606136B (zh) 2011-11-04 2017-11-21 Ａｓｍ國際股份有限公司 沉積摻雜氧化矽的方法以及用於沉積摻雜氧化矽至基板上的原子層沉積製程
US20130113085A1 (en) 2011-11-04 2013-05-09 Applied Materials, Inc. Atomic Layer Deposition Of Films Using Precursors Containing Hafnium Or Zirconium
US8927059B2 (en) 2011-11-08 2015-01-06 Applied Materials, Inc. Deposition of metal films using alane-based precursors
WO2013069739A1 (ja) 2011-11-11 2013-05-16 東京エレクトロン株式会社 プラズマ処理装置用誘電体窓、およびプラズマ処理装置
US20130122712A1 (en) 2011-11-14 2013-05-16 Jong Mun Kim Method of etching high aspect ratio features in a dielectric layer
US20130119018A1 (en) 2011-11-15 2013-05-16 Keren Jacobs Kanarik Hybrid pulsing plasma processing systems
US9005539B2 (en) 2011-11-23 2015-04-14 Asm Ip Holding B.V. Chamber sealing member
US9167625B2 (en) 2011-11-23 2015-10-20 Asm Ip Holding B.V. Radiation shielding for a substrate holder
US10276410B2 (en) 2011-11-25 2019-04-30 Nhk Spring Co., Ltd. Substrate support device
JP5694129B2 (ja) 2011-11-29 2015-04-01 株式会社東芝 半導体装置及びその製造方法
JP5921168B2 (ja) 2011-11-29 2016-05-24 株式会社日立国際電気 基板処理装置
US8633115B2 (en) 2011-11-30 2014-01-21 Applied Materials, Inc. Methods for atomic layer etching
CN104081545A (zh) 2011-12-01 2014-10-01 夸克星有限责任公司 固态照明装置及其制造方法
US9112003B2 (en) 2011-12-09 2015-08-18 Asm International N.V. Selective formation of metallic films on metallic surfaces
AU340165S (en) 2011-12-09 2012-01-06 Hunter Pacific Int Pty Ltd Electrical connector
AU340167S (en) 2011-12-09 2012-01-06 Hunter Pacific Int Pty Ltd Electrical connector
US9552966B2 (en) 2011-12-12 2017-01-24 Tokyo Electron Limited Antenna for plasma generation, plasma processing apparatus and plasma processing method
US8979559B2 (en) 2011-12-14 2015-03-17 Cooper Technologies Company Lockout tagout plug sleeve
KR101720117B1 (ko) 2011-12-14 2017-03-27 인텔 코포레이션 복수의 금속 산화물층들을 구비한 절연체 스택을 갖는 금속―절연체―금속（ｍｉｍ）커패시터
US20130157409A1 (en) 2011-12-16 2013-06-20 Kaushik Vaidya Selective atomic layer deposition of passivation layers for silicon-based photovoltaic devices
US9153583B2 (en) 2011-12-20 2015-10-06 Intel Corporation III-V layers for N-type and P-type MOS source-drain contacts
USD691974S1 (en) 2011-12-22 2013-10-22 Tokyo Electron Limited Holding pad for transferring a wafer
KR101821672B1 (ko) 2011-12-23 2018-01-24 인텔 코포레이션 비평면 게이트 올어라운드 장치 및 그의 제조 방법
JP5679581B2 (ja) 2011-12-27 2015-03-04 東京エレクトロン株式会社 成膜方法
US9388492B2 (en) 2011-12-27 2016-07-12 Asm America, Inc. Vapor flow control apparatus for atomic layer deposition
US20130161629A1 (en) 2011-12-27 2013-06-27 Applied Materials, Inc. Zero shrinkage smooth interface oxy-nitride and oxy-amorphous-silicon stacks for 3d memory vertical gate application
US8883028B2 (en) 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
KR20130076979A (ko) 2011-12-29 2013-07-09 삼성전자주식회사 반도체 소자 및 이의 제조방법
CN102505114A (zh) 2012-01-03 2012-06-20 西安电子科技大学 基于Ni膜辅助退火的SiC衬底上石墨烯制备方法
TW201330086A (zh) 2012-01-05 2013-07-16 Duan-Ren Yu 蝕刻裝置
CN102539019B (zh) * 2012-01-05 2013-09-25 北京东方计量测试研究所 空间真空环境下的温度测量与校准平台
US8659066B2 (en) 2012-01-06 2014-02-25 International Business Machines Corporation Integrated circuit with a thin body field effect transistor and capacitor
USD676943S1 (en) 2012-01-11 2013-02-26 Bill Kluss Pipe end cap
US20130183814A1 (en) 2012-01-13 2013-07-18 Applied Materials, Inc. Method of depositing a silicon germanium tin layer on a substrate
US10838123B2 (en) 2012-01-19 2020-11-17 Supriya Jaiswal Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications
US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
USD665055S1 (en) 2012-01-24 2012-08-07 Asm Ip Holding B.V. Shower plate
JP2013151720A (ja) 2012-01-25 2013-08-08 Ulvac Japan Ltd 真空成膜装置
US20130189635A1 (en) 2012-01-25 2013-07-25 First Solar, Inc. Method and apparatus providing separate modules for processing a substrate
JP5601331B2 (ja) 2012-01-26 2014-10-08 株式会社安川電機 ロボットハンドおよびロボット
WO2013112702A1 (en) 2012-01-26 2013-08-01 Applied Materials, Inc. Devices including metal-silicon contacts using indium arsenide films and apparatus and methods
US9466524B2 (en) 2012-01-31 2016-10-11 Applied Materials, Inc. Method of depositing metals using high frequency plasma
US9177826B2 (en) 2012-02-02 2015-11-03 Globalfoundries Inc. Methods of forming metal nitride materials
US9238865B2 (en) 2012-02-06 2016-01-19 Asm Ip Holding B.V. Multiple vapor sources for vapor deposition
USD698904S1 (en) 2012-02-08 2014-02-04 Asm Ip Holding B.V. Vacuum flange ring
US8728955B2 (en) 2012-02-14 2014-05-20 Novellus Systems, Inc. Method of plasma activated deposition of a conformal film on a substrate surface
KR101928356B1 (ko) 2012-02-16 2018-12-12 엘지이노텍 주식회사 반도체 제조 장치
JP5912637B2 (ja) 2012-02-17 2016-04-27 東京エレクトロン株式会社 半導体装置の製造方法
US8686386B2 (en) 2012-02-17 2014-04-01 Sandisk 3D Llc Nonvolatile memory device using a varistor as a current limiter element
US20130224964A1 (en) 2012-02-28 2013-08-29 Asm Ip Holding B.V. Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond
US9291063B2 (en) 2012-02-29 2016-03-22 Siemens Energy, Inc. Mid-section of a can-annular gas turbine engine with an improved rotation of air flow from the compressor to the turbine
US9162209B2 (en) 2012-03-01 2015-10-20 Novellus Systems, Inc. Sequential cascading of reaction volumes as a chemical reuse strategy
US9202727B2 (en) 2012-03-02 2015-12-01 ASM IP Holding Susceptor heater shim
US8785285B2 (en) 2012-03-08 2014-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
KR20140138272A (ko) 2012-03-09 2014-12-03 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 디스플레이 디바이스를 위한 배리어 물질
US11626279B2 (en) 2012-03-09 2023-04-11 Versum Materials Us, Llc Compositions and methods for making silicon containing films
US8912101B2 (en) 2012-03-15 2014-12-16 Asm Ip Holding B.V. Method for forming Si-containing film using two precursors by ALD
US8902428B2 (en) 2012-03-15 2014-12-02 Applied Materials, Inc. Process and apparatus for measuring the crystal fraction of crystalline silicon casted mono wafers
KR20140143151A (ko) 2012-03-15 2014-12-15 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치
USD715410S1 (en) 2012-03-21 2014-10-14 Blucher Metal A/S Roof drain
US9057388B2 (en) 2012-03-21 2015-06-16 International Business Machines Corporation Vacuum trap
US9682398B2 (en) 2012-03-30 2017-06-20 Applied Materials, Inc. Substrate processing system having susceptorless substrate support with enhanced substrate heating control
US9082684B2 (en) 2012-04-02 2015-07-14 Applied Materials, Inc. Method of epitaxial doped germanium tin alloy formation
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
US9982340B2 (en) 2012-04-04 2018-05-29 Taiwan Semiconductor Manufacturing Co. Ltd. Shower head apparatus and method for controlling plasma or gas distribution
GB201206096D0 (en) 2012-04-05 2012-05-16 Dyson Technology Ltd Atomic layer deposition
US9460912B2 (en) 2012-04-12 2016-10-04 Air Products And Chemicals, Inc. High temperature atomic layer deposition of silicon oxide thin films
US20130269612A1 (en) 2012-04-16 2013-10-17 Hermes-Epitek Corporation Gas Treatment Apparatus with Surrounding Spray Curtains
US8535767B1 (en) 2012-04-18 2013-09-17 Asm Ip Holding B.V. Method for repairing damage of dielectric film by hydrocarbon restoration and hydrocarbon depletion using UV irradiation
US10679883B2 (en) 2012-04-19 2020-06-09 Intevac, Inc. Wafer plate and mask arrangement for substrate fabrication
MY167662A (en) 2012-04-19 2018-09-21 Intevac Inc Dual-mask arrangement for solar cell fabrication
US20130280891A1 (en) 2012-04-20 2013-10-24 Yihwan Kim Method and apparatus for germanium tin alloy formation by thermal cvd
US8741723B2 (en) 2012-04-25 2014-06-03 Globalfoundries Inc. Methods of forming self-aligned contacts for a semiconductor device
TWI554636B (zh) 2012-04-25 2016-10-21 應用材料股份有限公司 由金屬脒鹽前驅物製造介電膜的方法
US8647439B2 (en) 2012-04-26 2014-02-11 Applied Materials, Inc. Method of epitaxial germanium tin alloy surface preparation
US10062600B2 (en) 2012-04-26 2018-08-28 Intevac, Inc. System and method for bi-facial processing of substrates
KR102072872B1 (ko) 2012-04-26 2020-02-03 인테벡, 인코포레이티드 진공 처리용 시스템 아키텍처
US20130288485A1 (en) 2012-04-30 2013-10-31 Applied Materials, Inc. Densification for flowable films
US9029253B2 (en) 2012-05-02 2015-05-12 Asm Ip Holding B.V. Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same
US8728832B2 (en) 2012-05-07 2014-05-20 Asm Ip Holdings B.V. Semiconductor device dielectric interface layer
JP2013235912A (ja) 2012-05-08 2013-11-21 Tokyo Electron Ltd 被処理基体をエッチングする方法、及びプラズマエッチング装置
TWI522490B (zh) 2012-05-10 2016-02-21 應用材料股份有限公司 利用微波電漿化學氣相沈積在基板上沈積膜的方法
US20130302520A1 (en) 2012-05-11 2013-11-14 Kai-An Wang Co-evaporation system comprising vapor pre-mixer
US8853826B2 (en) 2012-05-14 2014-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for bipolar junction transistors and resistors
US20130312663A1 (en) 2012-05-22 2013-11-28 Applied Microstructures, Inc. Vapor Delivery Apparatus
US8846543B2 (en) 2012-05-24 2014-09-30 Jinhong Tong Methods of atomic layer deposition of hafnium oxide / erbium oxide bi-layer as advanced gate dielectrics
JP6014661B2 (ja) 2012-05-25 2016-10-25 東京エレクトロン株式会社 プラズマ処理装置、及びプラズマ処理方法
US20130320429A1 (en) 2012-05-31 2013-12-05 Asm Ip Holding B.V. Processes and structures for dopant profile control in epitaxial trench fill
US8785215B2 (en) 2012-05-31 2014-07-22 Asm Ip Holding B.V. Method for repairing damage of dielectric film by cyclic processes
US8900886B2 (en) 2012-06-01 2014-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. System and method of monitoring and controlling atomic layer deposition of tungsten
US9978585B2 (en) 2012-06-01 2018-05-22 Versum Materials Us, Llc Organoaminodisilane precursors and methods for depositing films comprising same
US9337018B2 (en) 2012-06-01 2016-05-10 Air Products And Chemicals, Inc. Methods for depositing films with organoaminodisilane precursors
JP5920242B2 (ja) 2012-06-02 2016-05-18 東京エレクトロン株式会社 成膜方法及び成膜装置
US20150099065A1 (en) 2012-06-07 2015-04-09 Soitec Gas injection components for deposition systems, deposition systems including such components, and related methods
US20130330911A1 (en) 2012-06-08 2013-12-12 Yi-Chiau Huang Method of semiconductor film stabilization
US8722546B2 (en) 2012-06-11 2014-05-13 Asm Ip Holding B.V. Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control
USD723330S1 (en) 2012-06-11 2015-03-03 Barry Dean York Debris mask and basin
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US9984866B2 (en) 2012-06-12 2018-05-29 Component Re-Engineering Company, Inc. Multiple zone heater
US8728938B2 (en) 2012-06-13 2014-05-20 Ostendo Technologies, Inc. Method for substrate pretreatment to achieve high-quality III-nitride epitaxy
RU2600462C2 (ru) 2012-06-15 2016-10-20 Пикосан Ой Покрытие полотна подложки осаждением атомных слоев
US20130337653A1 (en) 2012-06-15 2013-12-19 Asm Ip Holding B.V. Semiconductor processing apparatus with compact free radical source
WO2013190988A1 (ja) 2012-06-22 2013-12-27 日本電気株式会社 スイッチング素子およびスイッチング素子の製造方法
US8962078B2 (en) 2012-06-22 2015-02-24 Tokyo Electron Limited Method for depositing dielectric films
US8933375B2 (en) 2012-06-27 2015-01-13 Asm Ip Holding B.V. Susceptor heater and method of heating a substrate
US10535735B2 (en) 2012-06-29 2020-01-14 Intel Corporation Contact resistance reduced P-MOS transistors employing Ge-rich contact layer
US10233541B2 (en) 2012-06-29 2019-03-19 Applied Materials, Inc. Deposition of films containing alkaline earth metals
TWD157605S (zh) 2012-07-04 2013-12-01 中磊電子股份有限公司 做為微型基地台的多模組化組合之通訊裝置
US9145612B2 (en) 2012-07-06 2015-09-29 Applied Materials, Inc. Deposition of N-metal films comprising aluminum alloys
US9023737B2 (en) 2012-07-11 2015-05-05 Asm Ip Holding B.V. Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment
US9630284B2 (en) 2012-07-12 2017-04-25 Lincoln Global, Inc. Configurable welding table and force indicating clamp
CN104428444B (zh) 2012-07-13 2016-09-21 盖列姆企业私人有限公司 膜形成装置及方法
US8784950B2 (en) 2012-07-16 2014-07-22 Asm Ip Holding B.V. Method for forming aluminum oxide film using Al compound containing alkyl group and alkoxy or alkylamine group
US9243325B2 (en) 2012-07-18 2016-01-26 Rohm And Haas Electronic Materials Llc Vapor delivery device, methods of manufacture and methods of use thereof
WO2014015248A1 (en) 2012-07-20 2014-01-23 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Organosilane precursors for ald/cvd silicon-containing film applications
US9928987B2 (en) 2012-07-20 2018-03-27 Applied Materials, Inc. Inductively coupled plasma source with symmetrical RF feed
US20140023794A1 (en) 2012-07-23 2014-01-23 Maitreyee Mahajani Method And Apparatus For Low Temperature ALD Deposition
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9911676B2 (en) 2012-07-27 2018-03-06 Asm Ip Holding B.V. System and method for gas-phase passivation of a semiconductor surface
US9117866B2 (en) 2012-07-31 2015-08-25 Asm Ip Holding B.V. Apparatus and method for calculating a wafer position in a processing chamber under process conditions
CN103578906B (zh) 2012-07-31 2016-04-27 细美事有限公司 用于处理基板的装置
US20140034632A1 (en) 2012-08-01 2014-02-06 Heng Pan Apparatus and method for selective oxidation at lower temperature using remote plasma source
US8911826B2 (en) 2012-08-02 2014-12-16 Asm Ip Holding B.V. Method of parallel shift operation of multiple reactors
KR20200102524A (ko) 2012-08-07 2020-08-31 메사추세츠 인스티튜트 오브 테크놀로지 항-뎅기 바이러스 항체 및 이들의 용도
US9514932B2 (en) 2012-08-08 2016-12-06 Applied Materials, Inc. Flowable carbon for semiconductor processing
US8664627B1 (en) 2012-08-08 2014-03-04 Asm Ip Holding B.V. Method for supplying gas with flow rate gradient over substrate
US8912070B2 (en) 2012-08-16 2014-12-16 The Institute of Microelectronics Chinese Academy of Science Method for manufacturing semiconductor device
WO2014027472A1 (ja) 2012-08-17 2014-02-20 株式会社Ihi 耐熱複合材料の製造方法及び製造装置
US9707530B2 (en) 2012-08-21 2017-07-18 Uop Llc Methane conversion apparatus and process using a supersonic flow reactor
US9370757B2 (en) 2012-08-21 2016-06-21 Uop Llc Pyrolytic reactor
US9169975B2 (en) 2012-08-28 2015-10-27 Asm Ip Holding B.V. Systems and methods for mass flow controller verification
USD693200S1 (en) 2012-08-28 2013-11-12 Lee Valley Tools, Ltd. Bench stop
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
JP2014049529A (ja) 2012-08-30 2014-03-17 Tokyo Electron Ltd プラズマ処理装置及び金属の酸化膜を洗浄する方法
US8859368B2 (en) 2012-09-04 2014-10-14 Globalfoundries Inc. Semiconductor device incorporating a multi-function layer into gate stacks
US9171715B2 (en) 2012-09-05 2015-10-27 Asm Ip Holding B.V. Atomic layer deposition of GeO2
US8742668B2 (en) 2012-09-05 2014-06-03 Asm Ip Holdings B.V. Method for stabilizing plasma ignition
US8651788B1 (en) 2012-09-06 2014-02-18 Horst Budde Variable-length, adjustable spacer
SG11201501144TA (en) 2012-09-07 2015-04-29 Applied Materials Inc Integrated processing of porous dielectric, polymer-coated substrates and epoxy within a multi-chamber vacuum system confirmation
KR20140033911A (ko) 2012-09-11 2014-03-19 에이에스엠 아이피 홀딩 비.브이. 증착 장치 및 증착 방법
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
JP5882167B2 (ja) 2012-09-13 2016-03-09 東京エレクトロン株式会社 熱処理装置
US20140077240A1 (en) 2012-09-17 2014-03-20 Radek Roucka Iv material photonic device on dbr
CA2895670A1 (en) 2012-09-19 2014-03-27 Apjet, Inc. Atmospheric-pressure plasma processing apparatus and method
US20140099794A1 (en) 2012-09-21 2014-04-10 Applied Materials, Inc. Radical chemistry modulation and control using multiple flow pathways
US8921207B2 (en) 2012-09-24 2014-12-30 Asm Ip Holding B.V., Inc. Tin precursors for vapor deposition and deposition processes
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
JP6042160B2 (ja) 2012-10-03 2016-12-14 東京エレクトロン株式会社 成膜方法及び成膜装置
US9353441B2 (en) 2012-10-05 2016-05-31 Asm Ip Holding B.V. Heating/cooling pedestal for semiconductor-processing apparatus
US20140099798A1 (en) 2012-10-05 2014-04-10 Asm Ip Holding B.V. UV-Curing Apparatus Provided With Wavelength-Tuned Excimer Lamp and Method of Processing Semiconductor Substrate Using Same
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
JP2014086472A (ja) 2012-10-19 2014-05-12 Sinfonia Technology Co Ltd クランプ装置及びワーク搬送ロボット
US9064948B2 (en) 2012-10-22 2015-06-23 Globalfoundries Inc. Methods of forming a semiconductor device with low-k spacers and the resulting device
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9230815B2 (en) 2012-10-26 2016-01-05 Appled Materials, Inc. Methods for depositing fluorine/carbon-free conformal tungsten
WO2014070600A1 (en) 2012-10-29 2014-05-08 Matheson Tri-Gas, Inc. Methods for selective and conformal epitaxy of highly doped si-containing materials for three dimensional structures
US8939781B2 (en) 2012-10-31 2015-01-27 International Business Machines Corporation Implementing reconfigurable power connector for multiple wiring configurations
US20140116335A1 (en) 2012-10-31 2014-05-01 Asm Ip Holding B.V. UV Irradiation Apparatus with Cleaning Mechanism and Method for Cleaning UV Irradiation Apparatus
JP5960028B2 (ja) 2012-10-31 2016-08-02 東京エレクトロン株式会社 熱処理装置
US9330899B2 (en) 2012-11-01 2016-05-03 Asm Ip Holding B.V. Method of depositing thin film
US9105587B2 (en) 2012-11-08 2015-08-11 Micron Technology, Inc. Methods of forming semiconductor structures with sulfur dioxide etch chemistries
US8784951B2 (en) 2012-11-16 2014-07-22 Asm Ip Holding B.V. Method for forming insulation film using non-halide precursor having four or more silicons
US20140141674A1 (en) 2012-11-16 2014-05-22 Liquipel IP, LLC Apparatus and methods for plasma enhanced chemical vapor deposition of dielectric/polymer coatings
US20150291830A1 (en) 2012-11-16 2015-10-15 Liquipel Ip Llc Apparatus and methods for plasma enhanced chemical vapor deposition of polymer coatings
US9190486B2 (en) 2012-11-20 2015-11-17 Globalfoundries Inc. Integrated circuits and methods for fabricating integrated circuits with reduced parasitic capacitance
US20140145332A1 (en) 2012-11-26 2014-05-29 Globalfoundries Inc. Methods of forming graphene liners and/or cap layers on copper-based conductive structures
US20150292088A1 (en) 2012-11-27 2015-10-15 Claudio Canizares Deposition systems having interchangeable gas injectors and related methods
CN102983093B (zh) 2012-12-03 2016-04-20 安徽三安光电有限公司 一种用于led外延晶圆制程的石墨承载盘
KR102046976B1 (ko) 2012-12-04 2019-12-02 삼성전자주식회사 반도체 메모리 장치 및 그 제조 방법
US9362092B2 (en) 2012-12-07 2016-06-07 LGS Innovations LLC Gas dispersion disc assembly
US9123577B2 (en) 2012-12-12 2015-09-01 Sandisk Technologies Inc. Air gap isolation in non-volatile memory using sacrificial films
US10240230B2 (en) 2012-12-18 2019-03-26 Seastar Chemicals Inc. Process and method for in-situ dry cleaning of thin film deposition reactors and thin film layers
US9064857B2 (en) 2012-12-19 2015-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. N metal for FinFET
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
EP2940004B1 (en) 2012-12-27 2017-09-13 Sumitomo Chemical Company Limited Method for producing oxime
US20140182053A1 (en) 2012-12-29 2014-07-03 Alexander Yeh Industry Co., Ltd. Pullable drain plug
EP2750167A1 (en) 2012-12-31 2014-07-02 Imec Method for tuning the effective work function of a gate structure in a semiconductor device
US9090972B2 (en) 2012-12-31 2015-07-28 Lam Research Corporation Gas supply systems for substrate processing chambers and methods therefor
US20140186544A1 (en) 2013-01-02 2014-07-03 Applied Materials, Inc. Metal processing using high density plasma
KR20140089793A (ko) 2013-01-07 2014-07-16 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
CN103014846A (zh) 2013-01-14 2013-04-03 东莞市中镓半导体科技有限公司 一种材料气相外延用同心圆环喷头结构
EP2946028B1 (en) 2013-01-16 2018-12-26 Universiteit Gent Methods for obtaining hydrophilic fluoropolymers
KR102097109B1 (ko) 2013-01-21 2020-04-10 에이에스엠 아이피 홀딩 비.브이. 증착 장치
CN103972132B (zh) 2013-01-24 2017-07-11 东京毅力科创株式会社 基板处理装置和载置台
US9018093B2 (en) 2013-01-25 2015-04-28 Asm Ip Holding B.V. Method for forming layer constituted by repeated stacked layers
KR20140095738A (ko) 2013-01-25 2014-08-04 삼성전자주식회사 트랜지스터 및 그 제조 방법
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US8894870B2 (en) 2013-02-01 2014-11-25 Asm Ip Holding B.V. Multi-step method and apparatus for etching compounds containing a metal
US9399228B2 (en) 2013-02-06 2016-07-26 Novellus Systems, Inc. Method and apparatus for purging and plasma suppression in a process chamber
EP2765218A1 (en) 2013-02-07 2014-08-13 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Method and apparatus for depositing atomic layers on a substrate
US9184045B2 (en) 2013-02-08 2015-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. Bottom-up PEALD process
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9758866B2 (en) 2013-02-13 2017-09-12 Wayne State University Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films
KR20140102782A (ko) 2013-02-14 2014-08-25 삼성전자주식회사 웨이퍼 이송용 블레이드 및 이를 포함하는 웨이퍼 이송 장치
US8932923B2 (en) 2013-02-19 2015-01-13 Globalfoundries Inc. Semiconductor gate structure for threshold voltage modulation and method of making same
FR3002241B1 (fr) 2013-02-21 2015-11-20 Altatech Semiconductor Dispositif de depot chimique en phase vapeur
US20140234466A1 (en) 2013-02-21 2014-08-21 HGST Netherlands B.V. Imprint mold and method for making using sidewall spacer line doubling
JP5934665B2 (ja) 2013-02-22 2016-06-15 東京エレクトロン株式会社 成膜方法、プログラム、コンピュータ記憶媒体及び成膜システム
TWI615497B (zh) 2013-02-28 2018-02-21 應用材料股份有限公司 金屬胺化物沉積前驅物及具有惰性安瓿襯裡之該前驅物的穩定化
US9449795B2 (en) 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
USD743357S1 (en) 2013-03-01 2015-11-17 Asm Ip Holding B.V. Susceptor
US8790743B1 (en) 2013-03-04 2014-07-29 Asm Ip Holding B.V. Method for controlling cyclic plasma-assisted process
US9593410B2 (en) 2013-03-05 2017-03-14 Applied Materials, Inc. Methods and apparatus for stable substrate processing with multiple RF power supplies
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
USD702188S1 (en) 2013-03-08 2014-04-08 Asm Ip Holding B.V. Thermocouple
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
CN105190847A (zh) 2013-03-08 2015-12-23 应用材料公司 具有适于保护抵抗氟等离子体的保护涂层的腔室部件
USD723153S1 (en) 2013-03-08 2015-02-24 Olen Borkholder Recess ceiling fan bezel
US20150218700A1 (en) 2013-03-08 2015-08-06 Applied Materials, Inc. Chamber component with protective coating suitable for protection against flourine plasma
US8933528B2 (en) 2013-03-11 2015-01-13 International Business Machines Corporation Semiconductor fin isolation by a well trapping fin portion
US9312222B2 (en) 2013-03-12 2016-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Patterning approach for improved via landing profile
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
KR101317942B1 (ko) 2013-03-13 2013-10-16 (주)테키스트 반도체 제조용 척의 에지링 냉각모듈
US9309978B2 (en) 2013-03-14 2016-04-12 Dresser-Rand Company Low head to stem ratio poppet valve
US20140273531A1 (en) 2013-03-14 2014-09-18 Asm Ip Holding B.V. Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES
US8846550B1 (en) 2013-03-14 2014-09-30 Asm Ip Holding B.V. Silane or borane treatment of metal thin films
US8841182B1 (en) 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US9824881B2 (en) 2013-03-14 2017-11-21 Asm Ip Holding B.V. Si precursors for deposition of SiN at low temperatures
US9556507B2 (en) 2013-03-14 2017-01-31 Applied Materials, Inc. Yttria-based material coated chemical vapor deposition chamber heater
US20140273534A1 (en) 2013-03-14 2014-09-18 Tokyo Electron Limited Integration of absorption based heating bake methods into a photolithography track system
US9564309B2 (en) 2013-03-14 2017-02-07 Asm Ip Holding B.V. Si precursors for deposition of SiN at low temperatures
US9252392B2 (en) 2013-03-14 2016-02-02 Applied Materials, Inc. Thin film encapsulation-thin ultra high barrier layer for OLED application
WO2014158253A2 (en) 2013-03-14 2014-10-02 Applied Materials, Inc. Thermal treated sandwich structure layer to improve adhesive strength
US8984962B2 (en) 2013-03-15 2015-03-24 H. Aaron Christmann Rotatable torque-measuring apparatus and method
WO2014140672A1 (en) 2013-03-15 2014-09-18 L'air Liquide, Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude Bis(alkylimido)-bis(alkylamido)molybdenum molecules for deposition of molybdenum-containing films
TWI627305B (zh) 2013-03-15 2018-06-21 Applied Materials, Inc. 用於轉盤處理室之具有剛性板的大氣蓋
US9865431B2 (en) 2013-03-15 2018-01-09 Applied Materials, Inc. Apparatus and method for tuning a plasma profile using a tuning electrode in a processing chamber
US20140273530A1 (en) 2013-03-15 2014-09-18 Victor Nguyen Post-Deposition Treatment Methods For Silicon Nitride
JP2016519736A (ja) 2013-03-15 2016-07-07 プライム グループ アライアンス, リミテッド ライアビリティ カンパニーPrime Group Alliance, LLC 非粘性層シーリングを有する対向ピストン内燃機関
US9666702B2 (en) 2013-03-15 2017-05-30 Matthew H. Kim Advanced heterojunction devices and methods of manufacturing advanced heterojunction devices
WO2014150260A1 (en) 2013-03-15 2014-09-25 Applied Materials, Inc Process load lock apparatus, lift assemblies, electronic device processing systems, and methods of processing substrates in load lock locations
JP6096547B2 (ja) 2013-03-21 2017-03-15 東京エレクトロン株式会社 プラズマ処理装置及びシャワープレート
JP5386046B1 (ja) 2013-03-27 2014-01-15 エピクルー株式会社 サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置
USD734377S1 (en) 2013-03-28 2015-07-14 Hirata Corporation Top cover of a load lock chamber
JP6107327B2 (ja) 2013-03-29 2017-04-05 東京エレクトロン株式会社 成膜装置及びガス供給装置並びに成膜方法
JP6134191B2 (ja) 2013-04-07 2017-05-24 村川 惠美 回転型セミバッチａｌｄ装置
US9142437B2 (en) 2013-04-10 2015-09-22 Globalfoundries Inc. System for separately handling different size FOUPs
US8864202B1 (en) 2013-04-12 2014-10-21 Varian Semiconductor Equipment Associates, Inc. Spring retained end effector contact pad
JP2014216647A (ja) 2013-04-29 2014-11-17 エーエスエムアイピー ホールディング ビー．ブイ． 金属ドープされた抵抗切り替え層を有する抵抗変化型メモリを製造する方法
US8956939B2 (en) 2013-04-29 2015-02-17 Asm Ip Holding B.V. Method of making a resistive random access memory device
USD766849S1 (en) 2013-05-15 2016-09-20 Ebara Corporation Substrate retaining ring
US9252024B2 (en) 2013-05-17 2016-02-02 Applied Materials, Inc. Deposition chambers with UV treatment and methods of use
JP2014229680A (ja) 2013-05-21 2014-12-08 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びその製造方法
US9365924B2 (en) 2013-05-23 2016-06-14 Asm Ip Holding B.V. Method for forming film by plasma-assisted deposition using two-frequency combined pulsed RF power
US9142393B2 (en) 2013-05-23 2015-09-22 Asm Ip Holding B.V. Method for cleaning reaction chamber using pre-cleaning process
US8900467B1 (en) 2013-05-25 2014-12-02 HGST Netherlands B.V. Method for making a chemical contrast pattern using block copolymers and sequential infiltration synthesis
USD726365S1 (en) 2013-05-29 2015-04-07 Sis Resources Ltd. Mouthpiece plug for electronic cigarette
EP3004745A4 (en) * 2013-05-30 2017-02-08 Knowles Capital Formation, Inc. Wireless culinary probe calibration method and system
US9552979B2 (en) 2013-05-31 2017-01-24 Asm Ip Holding B.V. Cyclic aluminum nitride deposition in a batch reactor
US9117657B2 (en) 2013-06-07 2015-08-25 Asm Ip Holding B.V. Method for filling recesses using pre-treatment with hydrocarbon-containing gas
US9245740B2 (en) 2013-06-07 2016-01-26 Dnf Co., Ltd. Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same
US9123510B2 (en) 2013-06-12 2015-09-01 ASM IP Holding, B.V. Method for controlling in-plane uniformity of substrate processed by plasma-assisted process
US20140367043A1 (en) 2013-06-17 2014-12-18 Applied Materials, Inc. Method for fast and repeatable plasma ignition and tuning in plasma chambers
USD794185S1 (en) 2013-06-17 2017-08-08 Q-Med Ab Syringe part
CN104244620B (zh) 2013-06-19 2017-05-31 上海微电子装备有限公司 一种大型半导体设备集约型装配柜体
CN105164791A (zh) 2013-06-26 2015-12-16 应用材料公司 沉积金属合金膜的方法
US20150004798A1 (en) 2013-06-28 2015-01-01 Lam Research Corporation Chemical deposition chamber having gas seal
GB2531453A (en) 2013-07-02 2016-04-20 Ultratech Inc Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations
US9677176B2 (en) 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
US9490149B2 (en) 2013-07-03 2016-11-08 Lam Research Corporation Chemical deposition apparatus having conductance control
JP5861676B2 (ja) 2013-07-08 2016-02-16 株式会社安川電機 吸着構造、ロボットハンドおよびロボット
US20150010381A1 (en) 2013-07-08 2015-01-08 United Microelectronics Corp. Wafer processing chamber and method for transferring wafer in the same
USD705745S1 (en) 2013-07-08 2014-05-27 Witricity Corporation Printed resonator coil
US8940646B1 (en) 2013-07-12 2015-01-27 Lam Research Corporation Sequential precursor dosing in an ALD multi-station/batch reactor
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9099423B2 (en) 2013-07-12 2015-08-04 Asm Ip Holding B.V. Doped semiconductor films and processing
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US20150030766A1 (en) 2013-07-25 2015-01-29 Novellus Systems, Inc. Pedestal bottom clean for improved fluorine utilization and integrated symmetric foreline
US9099393B2 (en) 2013-08-05 2015-08-04 International Business Machines Corporation Enabling enhanced reliability and mobility for replacement gate planar and FinFET structures
US8986562B2 (en) 2013-08-07 2015-03-24 Ultratech, Inc. Methods of laser processing photoresist in a gaseous environment
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US9396934B2 (en) 2013-08-14 2016-07-19 Asm Ip Holding B.V. Methods of forming films including germanium tin and structures and devices including the films
US8900999B1 (en) 2013-08-16 2014-12-02 Applied Materials, Inc. Low temperature high pressure high H2/WF6 ratio W process for 3D NAND application
WO2015026230A1 (en) 2013-08-19 2015-02-26 Asm Ip Holding B.V. Twin-assembly of diverging semiconductor processing systems
US9209033B2 (en) 2013-08-21 2015-12-08 Tel Epion Inc. GCIB etching method for adjusting fin height of finFET devices
US9190263B2 (en) 2013-08-22 2015-11-17 Asm Ip Holding B.V. Method for forming SiOCH film using organoaminosilane annealing
US9136108B2 (en) 2013-09-04 2015-09-15 Asm Ip Holding B.V. Method for restoring porous surface of dielectric layer by UV light-assisted ALD
US9484199B2 (en) 2013-09-06 2016-11-01 Applied Materials, Inc. PECVD microcrystalline silicon germanium (SiGe)
JP6338462B2 (ja) 2013-09-11 2018-06-06 東京エレクトロン株式会社 プラズマ処理装置
USD716742S1 (en) 2013-09-13 2014-11-04 Asm Ip Holding B.V. Substrate supporter for semiconductor deposition apparatus
USD724553S1 (en) 2013-09-13 2015-03-17 Asm Ip Holding B.V. Substrate supporter for semiconductor deposition apparatus
US10312127B2 (en) 2013-09-16 2019-06-04 Applied Materials, Inc. Compliant robot blade for defect reduction
US9284642B2 (en) 2013-09-19 2016-03-15 Asm Ip Holding B.V. Method for forming oxide film by plasma-assisted processing
US9378971B1 (en) 2014-12-04 2016-06-28 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9018103B2 (en) 2013-09-26 2015-04-28 Lam Research Corporation High aspect ratio etch with combination mask
CN105556654B (zh) 2013-09-26 2019-07-26 应用材料公司 用于传送基板的气动终端受动器装置、基板传送系统与方法
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
USD756929S1 (en) 2013-09-30 2016-05-24 Danfoss A/S Electrical connector for refrigeration valve
KR101846850B1 (ko) 2013-09-30 2018-04-09 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 장치, 기판 처리 시스템 및 기록 매체
US9396986B2 (en) 2013-10-04 2016-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanism of forming a trench structure
JP6267080B2 (ja) 2013-10-07 2018-01-24 東京エレクトロン株式会社 シリコン窒化物膜の成膜方法および成膜装置
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9034717B2 (en) 2013-10-16 2015-05-19 Taiwan Semiconductor Manufacturing Company Limited Semiconductor-on-insulator structure and method of fabricating the same
US9576790B2 (en) 2013-10-16 2017-02-21 Asm Ip Holding B.V. Deposition of boron and carbon containing materials
US20150111374A1 (en) 2013-10-18 2015-04-23 International Business Machines Corporation Surface treatment in a dep-etch-dep process
JP5847783B2 (ja) 2013-10-21 2016-01-27 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体
US9343308B2 (en) 2013-10-28 2016-05-17 Asm Ip Holding B.V. Method for trimming carbon-containing film at reduced trimming rate
JP6596737B2 (ja) 2013-10-28 2019-10-30 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング アミドイミン配位子を含む金属複合体
KR20150050638A (ko) 2013-10-29 2015-05-11 에이에스엠 아이피 홀딩 비.브이. 증착 장치
US9029272B1 (en) 2013-10-31 2015-05-12 Asm Ip Holding B.V. Method for treating SiOCH film with hydrogen plasma
CN104630735B (zh) * 2013-11-06 2017-12-19 北京北方华创微电子装备有限公司 温度监控装置及等离子体加工设备
US20150125628A1 (en) 2013-11-06 2015-05-07 Asm Ip Holding B.V. Method of depositing thin film
KR20150052996A (ko) 2013-11-07 2015-05-15 삼성디스플레이 주식회사 기판 이송 장치 및 이를 포함하는 박막 증착 장치
USD739222S1 (en) 2013-11-13 2015-09-22 Jeff Chadbourne Two-piece magnetic clamp
US9605343B2 (en) 2013-11-13 2017-03-28 Asm Ip Holding B.V. Method for forming conformal carbon films, structures conformal carbon film, and system of forming same
TW202208651A (zh) 2013-11-21 2022-03-01 美商恩特葛瑞斯股份有限公司 用於電漿系統之腔室構件的表面塗層
US9745658B2 (en) 2013-11-25 2017-08-29 Lam Research Corporation Chamber undercoat preparation method for low temperature ALD films
TWI588286B (zh) 2013-11-26 2017-06-21 烏翠泰克股份有限公司 經改良的電漿強化原子層沉積方法、周期及裝置
US10179947B2 (en) 2013-11-26 2019-01-15 Asm Ip Holding B.V. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
KR20150061179A (ko) 2013-11-26 2015-06-04 에스케이하이닉스 주식회사 플라즈마 강화 기상 증착
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9355882B2 (en) 2013-12-04 2016-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Transfer module for bowed wafers
US9620382B2 (en) 2013-12-06 2017-04-11 University Of Maryland, College Park Reactor for plasma-based atomic layer etching of materials
TW201525173A (zh) 2013-12-09 2015-07-01 應用材料股份有限公司 選擇性層沉積之方法
US9401273B2 (en) 2013-12-11 2016-07-26 Asm Ip Holding B.V. Atomic layer deposition of silicon carbon nitride based materials
JP2015115461A (ja) 2013-12-11 2015-06-22 大日本印刷株式会社 微細構造体の欠陥修正方法および製造方法
TWI784799B (zh) 2013-12-13 2022-11-21 日商昕芙旎雅股份有限公司 設備前端模組（ｅｆｅｍ）系統
JP6919131B2 (ja) 2013-12-17 2021-08-18 テキサス インスツルメンツ インコーポレイテッド リソ・フリーズ・リソ・エッチプロセスを用いる伸長コンタクト
KR102102787B1 (ko) 2013-12-17 2020-04-22 삼성전자주식회사 기판 처리 장치 및 블록커 플레이트 어셈블리
US10431489B2 (en) 2013-12-17 2019-10-01 Applied Materials, Inc. Substrate support apparatus having reduced substrate particle generation
US9478419B2 (en) 2013-12-18 2016-10-25 Asm Ip Holding B.V. Sulfur-containing thin films
US9362385B2 (en) 2013-12-18 2016-06-07 Taiwan Semiconductor Manufacturing Company Ltd. Method for tuning threshold voltage of semiconductor device with metal gate structure
US9245742B2 (en) 2013-12-18 2016-01-26 Asm Ip Holding B.V. Sulfur-containing thin films
US9984874B2 (en) 2013-12-18 2018-05-29 Imec Vzw Method of producing transition metal dichalcogenide layer
US20150179640A1 (en) 2013-12-19 2015-06-25 Globalfoundries Inc. Common fabrication of different semiconductor devices with different threshold voltages
JP6230900B2 (ja) 2013-12-19 2017-11-15 東京エレクトロン株式会社 基板処理装置
US9353440B2 (en) 2013-12-20 2016-05-31 Applied Materials, Inc. Dual-direction chemical delivery system for ALD/CVD chambers
KR20150073251A (ko) 2013-12-20 2015-07-01 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
KR102146705B1 (ko) 2013-12-23 2020-08-21 삼성전자주식회사 반도체 소자의 배선 구조물 및 그 형성 방법
US20150175467A1 (en) 2013-12-23 2015-06-25 Infineon Technologies Austria Ag Mold, method for producing a mold, and method for forming a mold article
US9698035B2 (en) 2013-12-23 2017-07-04 Lam Research Corporation Microstructures for improved wafer handling
US9406547B2 (en) 2013-12-24 2016-08-02 Intel Corporation Techniques for trench isolation using flowable dielectric materials
TWI650832B (zh) 2013-12-26 2019-02-11 維克儀器公司 用於化學氣相沉積系統之具有隔熱蓋的晶圓載具
US9159561B2 (en) 2013-12-26 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method for overcoming broken line and photoresist scum issues in tri-layer photoresist patterning
JP6247095B2 (ja) 2013-12-27 2017-12-13 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
CN104752351B (zh) 2013-12-30 2019-03-29 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法
US10159113B2 (en) 2014-01-17 2018-12-18 Koninklijke Philips N.V. Heating system comprising semiconductor light sources
US9328416B2 (en) 2014-01-17 2016-05-03 Lam Research Corporation Method for the reduction of defectivity in vapor deposited films
US9677172B2 (en) 2014-01-21 2017-06-13 Applied Materials, Inc. Methods for forming a cobalt-ruthenium liner layer for interconnect structures
GB2539572B (en) 2014-01-23 2019-03-20 Ultratech Inc Vapor delivery system
JP6324739B2 (ja) 2014-01-27 2018-05-16 株式会社Kelk 半導体ウェーハの温度制御装置、及び半導体ウェーハの温度制御方法
JP6058170B2 (ja) 2014-01-28 2017-01-11 三菱電機株式会社 炭化珪素半導体装置
JP5805227B2 (ja) 2014-01-28 2015-11-04 東京エレクトロン株式会社 プラズマ処理装置
CN106104775B (zh) 2014-01-31 2019-05-21 应用材料公司 腔室涂层
US9502218B2 (en) 2014-01-31 2016-11-22 Applied Materials, Inc. RPS assisted RF plasma source for semiconductor processing
TWI639179B (zh) 2014-01-31 2018-10-21 美商蘭姆研究公司 真空整合硬遮罩製程及設備
USD725168S1 (en) 2014-02-04 2015-03-24 Asm Ip Holding B.V. Heater block
TWI686499B (zh) 2014-02-04 2020-03-01 荷蘭商Ａｓｍ Ｉｐ控股公司 金屬、金屬氧化物與介電質的選擇性沉積
US9370863B2 (en) 2014-02-04 2016-06-21 Asm Ip Holding B.V. Anti-slip end-effector for transporting workpiece
USD720838S1 (en) 2014-02-04 2015-01-06 Asm Ip Holding B.V. Shower plate
USD724701S1 (en) 2014-02-04 2015-03-17 ASM IP Holding, B.V. Shower plate
USD732644S1 (en) 2014-02-04 2015-06-23 Asm Ip Holding B.V. Top plate
USD732145S1 (en) 2014-02-04 2015-06-16 Asm Ip Holding B.V. Shower plate
USD726884S1 (en) 2014-02-04 2015-04-14 Asm Ip Holding B.V. Heater block
US8993457B1 (en) 2014-02-06 2015-03-31 Cypress Semiconductor Corporation Method of fabricating a charge-trapping gate stack using a CMOS process flow
US9416447B2 (en) 2014-02-07 2016-08-16 HGST Netherlands B.V. Method for line density multiplication using block copolymers and sequential infiltration synthesis
US9281211B2 (en) 2014-02-10 2016-03-08 International Business Machines Corporation Nanoscale interconnect structure
US9721947B2 (en) 2014-02-12 2017-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacturing
USD733257S1 (en) 2014-02-14 2015-06-30 Hansgrohe Se Overhead shower
JP6249815B2 (ja) 2014-02-17 2017-12-20 株式会社Ihi 耐熱複合材料の製造方法及び製造装置
US9916995B2 (en) 2014-02-24 2018-03-13 Lam Research Corporation Compact substrate processing tool with multi-station processing and pre-processing and/or post-processing stations
JP6303592B2 (ja) 2014-02-25 2018-04-04 東京エレクトロン株式会社 基板処理装置
KR102233577B1 (ko) 2014-02-25 2021-03-30 삼성전자주식회사 반도체 소자의 패턴 형성 방법
US9576952B2 (en) 2014-02-25 2017-02-21 Globalfoundries Inc. Integrated circuits with varying gate structures and fabrication methods
US9362180B2 (en) 2014-02-25 2016-06-07 Globalfoundries Inc. Integrated circuit having multiple threshold voltages
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US9425078B2 (en) 2014-02-26 2016-08-23 Lam Research Corporation Inhibitor plasma mediated atomic layer deposition for seamless feature fill
CN104882359B (zh) 2014-02-27 2018-03-23 斯克林集团公司 基板处理装置以及基板处理方法
JP6278751B2 (ja) 2014-03-04 2018-02-14 東京エレクトロン株式会社 搬送方法及び基板処理装置
KR20150104817A (ko) 2014-03-06 2015-09-16 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
US20150255324A1 (en) 2014-03-06 2015-09-10 Applied Materials, Inc. Seamless gap-fill with spatial atomic layer deposition
JP6204231B2 (ja) 2014-03-11 2017-09-27 大陽日酸株式会社 空気液化分離装置及び方法
JP2015173230A (ja) 2014-03-12 2015-10-01 株式会社東芝 半導体装置及び半導体装置の製造方法
US10109534B2 (en) 2014-03-14 2018-10-23 Applied Materials, Inc. Multi-threshold voltage (Vt) workfunction metal by selective atomic layer deposition (ALD)
JP6379550B2 (ja) 2014-03-18 2018-08-29 東京エレクトロン株式会社 成膜装置
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US9299557B2 (en) 2014-03-19 2016-03-29 Asm Ip Holding B.V. Plasma pre-clean module and process
KR102308587B1 (ko) 2014-03-19 2021-10-01 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
US20150267295A1 (en) 2014-03-19 2015-09-24 Asm Ip Holding B.V. Removable substrate tray and assembly and reactor including same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
JP6275822B2 (ja) 2014-03-20 2018-02-07 株式会社東芝 非水電解質電池用活物質、非水電解質電池用電極、非水電解質二次電池、電池パック及び非水電解質電池用活物質の製造方法
JP5944429B2 (ja) 2014-03-20 2016-07-05 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
JP6270575B2 (ja) 2014-03-24 2018-01-31 株式会社日立国際電気 反応管、基板処理装置及び半導体装置の製造方法
JP6304592B2 (ja) 2014-03-25 2018-04-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP5941491B2 (ja) 2014-03-26 2016-06-29 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法並びにプログラム
WO2015145751A1 (ja) 2014-03-28 2015-10-01 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
JP6147693B2 (ja) 2014-03-31 2017-06-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、およびプログラム
US9637823B2 (en) 2014-03-31 2017-05-02 Asm Ip Holding B.V. Plasma atomic layer deposition
JP6254036B2 (ja) 2014-03-31 2017-12-27 三菱重工業株式会社 三次元積層装置及び三次元積層方法
US20150280051A1 (en) 2014-04-01 2015-10-01 Tsmc Solar Ltd. Diffuser head apparatus and method of gas distribution
US9343350B2 (en) 2014-04-03 2016-05-17 Asm Ip Holding B.V. Anti-slip end effector for transporting workpiece using van der waals force
US9663857B2 (en) 2014-04-07 2017-05-30 Asm Ip Holding B.V. Method for stabilizing reaction chamber pressure
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
KR102094470B1 (ko) 2014-04-08 2020-03-27 삼성전자주식회사 반도체 소자 및 그 제조 방법
US10047435B2 (en) 2014-04-16 2018-08-14 Asm Ip Holding B.V. Dual selective deposition
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US9184054B1 (en) 2014-04-25 2015-11-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method for integrated circuit patterning
US9343294B2 (en) 2014-04-28 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure having air gap and method of forming the same
US9464352B2 (en) 2014-05-02 2016-10-11 Asm Ip Holding B.V. Low-oxidation plasma-assisted process
JP6324800B2 (ja) 2014-05-07 2018-05-16 東京エレクトロン株式会社 成膜方法および成膜装置
KR102168792B1 (ko) 2014-05-08 2020-10-23 스트라타시스 엘티디. 선택적 소결에 의한 3d 프린팅 방법 및 장치
US9917295B2 (en) 2014-05-13 2018-03-13 Uchicago Argonne, Llc Methods for using atomic layer deposition to produce a film for solid state electrolytes and protective electrode coatings for lithium batteries
TWI518751B (zh) 2014-05-14 2016-01-21 國立清華大學 成分元素濃度漸變分佈之載子通道及其製作方法
US9343343B2 (en) 2014-05-19 2016-05-17 Asm Ip Holding B.V. Method for reducing particle generation at bevel portion of substrate
US9257557B2 (en) 2014-05-20 2016-02-09 Globalfoundries Inc. Semiconductor structure with self-aligned wells and multiple channel materials
US9577192B2 (en) 2014-05-21 2017-02-21 Sony Semiconductor Solutions Corporation Method for forming a metal cap in a semiconductor memory device
USD733262S1 (en) 2014-05-22 2015-06-30 Young Boung Kang Disposer of connection member for kitchen sink bowl
JP2016005900A (ja) 2014-05-27 2016-01-14 パナソニックＩｐマネジメント株式会社 ガスバリア膜、ガスバリア膜付きフィルム基板およびこれを備えた電子デバイス。
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US20150348755A1 (en) 2014-05-29 2015-12-03 Charm Engineering Co., Ltd. Gas distribution apparatus and substrate processing apparatus including same
KR102154082B1 (ko) 2014-05-30 2020-09-09 가부시키가이샤 에바라 세이사꾸쇼 진공 배기 시스템
JP6301203B2 (ja) 2014-06-02 2018-03-28 株式会社ディスコ チップの製造方法
JP6225837B2 (ja) 2014-06-04 2017-11-08 東京エレクトロン株式会社 成膜装置、成膜方法、記憶媒体
EP2953162A1 (en) 2014-06-06 2015-12-09 IMEC vzw Method for manufacturing a semiconductor device comprising transistors each having a different effective work function
US9773683B2 (en) 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
US10998228B2 (en) 2014-06-12 2021-05-04 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned interconnect with protection layer
USD743513S1 (en) 2014-06-13 2015-11-17 Asm Ip Holding B.V. Seal ring
US9978632B2 (en) 2014-06-13 2018-05-22 Applied Materials, Inc. Direct lift process apparatus
DE102014108352A1 (de) 2014-06-13 2015-12-17 Forschungszentrum Jülich GmbH Verfahren zum Abscheiden einer Kristallschicht bei niedrigen Temperaturen, insbesondere einer photolumineszierenden IV-IV-Schicht auf einem IV-Substrat, sowie ein eine derartige Schicht aufweisendes optoelektronisches Bauelement
JP6225842B2 (ja) 2014-06-16 2017-11-08 東京エレクトロン株式会社 成膜装置、成膜方法、記憶媒体
KR102195003B1 (ko) 2014-06-18 2020-12-24 삼성전자주식회사 반도체 다이오드, 가변 저항 메모리 장치 및 가변 저항 메모리 장치의 제조 방법
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
USD753629S1 (en) 2014-06-19 2016-04-12 Yamaha Corporation Speaker
US20150367253A1 (en) 2014-06-24 2015-12-24 Us Synthetic Corporation Photoluminescent thin-layer chromatography plate and methods for making same
US20150380296A1 (en) 2014-06-25 2015-12-31 Lam Research Corporation Cleaning of carbon-based contaminants in metal interconnects for interconnect capping applications
US9825191B2 (en) 2014-06-27 2017-11-21 Sunpower Corporation Passivation of light-receiving surfaces of solar cells with high energy gap (EG) materials
US9911579B2 (en) 2014-07-03 2018-03-06 Applied Materials, Inc. Showerhead having a detachable high resistivity gas distribution plate
USD736348S1 (en) 2014-07-07 2015-08-11 Jiangmen Triumph Rain Showers Co., LTD Spray head for a shower
US9349620B2 (en) 2014-07-09 2016-05-24 Asm Ip Holdings B.V. Apparatus and method for pre-baking substrate upstream of process chamber
US9617637B2 (en) 2014-07-15 2017-04-11 Lam Research Corporation Systems and methods for improving deposition rate uniformity and reducing defects in substrate processing systems
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
KR102262887B1 (ko) 2014-07-21 2021-06-08 삼성전자주식회사 반도체 장치 및 그 제조 방법
US10192717B2 (en) 2014-07-21 2019-01-29 Applied Materials, Inc. Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9617638B2 (en) 2014-07-30 2017-04-11 Lam Research Corporation Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US10176996B2 (en) 2014-08-06 2019-01-08 Globalfoundries Inc. Replacement metal gate and fabrication process with reduced lithography steps
USD751176S1 (en) 2014-08-07 2016-03-08 Hansgrohe Se Overhead shower
US9252238B1 (en) 2014-08-18 2016-02-02 Lam Research Corporation Semiconductor structures with coplanar recessed gate layers and fabrication methods
KR20160021958A (ko) 2014-08-18 2016-02-29 삼성전자주식회사 플라즈마 처리 장치 및 기판 처리 방법
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9349637B2 (en) 2014-08-21 2016-05-24 Lam Research Corporation Method for void-free cobalt gap fill
USD782419S1 (en) 2014-08-22 2017-03-28 Christopher C. Willette Female keyed lamp plug
US10224222B2 (en) 2014-09-09 2019-03-05 Asm Ip Holding B.V. Assembly of liner and flange for vertical furnace as well as a vertical process furnace
USD742202S1 (en) 2014-09-11 2015-11-03 Thomas Jason Cyphers Sign frame key
USD764196S1 (en) 2014-09-17 2016-08-23 Sheryl Handler Stool
US9576792B2 (en) 2014-09-17 2017-02-21 Asm Ip Holding B.V. Deposition of SiN
US9214333B1 (en) 2014-09-24 2015-12-15 Lam Research Corporation Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD
KR102247416B1 (ko) 2014-09-24 2021-05-03 인텔 코포레이션 표면 종단을 갖는 나노와이어를 사용하여 형성되는 스케일링된 tfet 트랜지스터
US9478414B2 (en) 2014-09-26 2016-10-25 Asm Ip Holding B.V. Method for hydrophobization of surface of silicon-containing film by ALD
US9362107B2 (en) 2014-09-30 2016-06-07 Applied Materials, Inc. Flowable low-k dielectric gapfill treatment
KR102123942B1 (ko) 2014-09-30 2020-06-17 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 반응관
US9558946B2 (en) 2014-10-03 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and methods of forming FinFETs
US9331093B2 (en) 2014-10-03 2016-05-03 Sandisk Technologies Inc. Three dimensional NAND device with silicon germanium heterostructure channel
US10192770B2 (en) 2014-10-03 2019-01-29 Applied Materials, Inc. Spring-loaded pins for susceptor assembly and processing methods using same
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
ES2703911T3 (es) 2014-10-13 2019-03-13 Heraeus Deutschland Gmbh & Co Kg Pintura de color cobre
USD759137S1 (en) 2014-10-14 2016-06-14 Victor Equipment Company Consumables adapter for a welding torch
US9530787B2 (en) 2014-10-20 2016-12-27 Sandisk Technologies Llc Batch contacts for multiple electrically conductive layers
JP2016086099A (ja) 2014-10-27 2016-05-19 東京エレクトロン株式会社 プラズマ処理装置
KR101535573B1 (ko) 2014-11-04 2015-07-13 연세대학교 산학협력단 전이금속 칼코겐 화합물 합성 방법
KR102268187B1 (ko) 2014-11-10 2021-06-24 삼성전자주식회사 자기 기억 소자 및 그 제조 방법
US9305836B1 (en) 2014-11-10 2016-04-05 International Business Machines Corporation Air gap semiconductor structure with selective cap bilayer
KR102300403B1 (ko) 2014-11-19 2021-09-09 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
JP2016098406A (ja) 2014-11-21 2016-05-30 東京エレクトロン株式会社 モリブデン膜の成膜方法
WO2016081146A1 (en) 2014-11-21 2016-05-26 Applied Materials, Inc. Alcohol assisted ald film deposition
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US9589790B2 (en) 2014-11-24 2017-03-07 Lam Research Corporation Method of depositing ammonia free and chlorine free conformal silicon nitride film
JP6354539B2 (ja) 2014-11-25 2018-07-11 東京エレクトロン株式会社 基板処理装置、基板処理方法、記憶媒体
JP6086892B2 (ja) 2014-11-25 2017-03-01 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9837281B2 (en) 2014-11-26 2017-12-05 Asm Ip Holding B.V. Cyclic doped aluminum nitride deposition
US9406683B2 (en) 2014-12-04 2016-08-02 International Business Machines Corporation Wet bottling process for small diameter deep trench capacitors
US9620377B2 (en) 2014-12-04 2017-04-11 Lab Research Corporation Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch
US9997373B2 (en) 2014-12-04 2018-06-12 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9384998B2 (en) 2014-12-04 2016-07-05 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9951421B2 (en) 2014-12-10 2018-04-24 Lam Research Corporation Inlet for effective mixing and purging
KR102307633B1 (ko) 2014-12-10 2021-10-06 삼성전자주식회사 반도체 소자 및 그 제조 방법
US20160168699A1 (en) 2014-12-12 2016-06-16 Asm Ip Holding B.V. Method for depositing metal-containing film using particle-reduction step
US10062564B2 (en) 2014-12-15 2018-08-28 Tokyo Electron Limited Method of selective gas phase film deposition on a substrate by modifying the surface using hydrogen plasma
JP6404111B2 (ja) 2014-12-18 2018-10-10 東京エレクトロン株式会社 プラズマ処理装置
US9820289B1 (en) 2014-12-18 2017-11-14 Sprint Spectrum L.P. Method and system for managing quantity of carriers in air interface connection based on type of content
CN105762068A (zh) 2014-12-19 2016-07-13 联华电子股份有限公司 半导体元件及其制作方法
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US9515072B2 (en) 2014-12-26 2016-12-06 Taiwan Semiconductor Manufacturing Company Ltd. FinFET structure and method for manufacturing thereof
US9474163B2 (en) 2014-12-30 2016-10-18 Asm Ip Holding B.V. Germanium oxide pre-clean module and process
US9324846B1 (en) 2015-01-08 2016-04-26 Globalfoundries Inc. Field plate in heterojunction bipolar transistor with improved break-down voltage
USD753269S1 (en) 2015-01-09 2016-04-05 Asm Ip Holding B.V. Top plate
US9396956B1 (en) 2015-01-16 2016-07-19 Asm Ip Holding B.V. Method of plasma-enhanced atomic layer etching
US9496040B2 (en) 2015-01-22 2016-11-15 Sandisk Technologies Llc Adaptive multi-page programming methods and apparatus for non-volatile memory
TW201639063A (zh) 2015-01-22 2016-11-01 應用材料股份有限公司 批量加熱和冷卻腔室或負載鎖定裝置
JP6470057B2 (ja) 2015-01-29 2019-02-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
US9816180B2 (en) 2015-02-03 2017-11-14 Asm Ip Holding B.V. Selective deposition
US9520295B2 (en) 2015-02-03 2016-12-13 Lam Research Corporation Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems
KR20180100734A (ko) 2015-02-13 2018-09-11 엔테그리스, 아이엔씨. 기판 제품 및 장치의 특성 및 성능을 향상시키기 위한 코팅
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US9275834B1 (en) 2015-02-20 2016-03-01 Applied Materials, Inc. Selective titanium nitride etch
US10228291B2 (en) 2015-02-25 2019-03-12 Kokusai Electric Corporation Substrate processing apparatus, and thermocouple
USD765882S1 (en) 2015-02-25 2016-09-06 Aluvision, N.V. Frame element
US10548504B2 (en) 2015-03-06 2020-02-04 Ethicon Llc Overlaid multi sensor radio frequency (RF) electrode system to measure tissue compression
US9808246B2 (en) 2015-03-06 2017-11-07 Ethicon Endo-Surgery, Llc Method of operating a powered surgical instrument
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
IL237775B (en) 2015-03-16 2019-03-31 Redler Tech Ltd Automatic, highly reliable, fully redundant electornic circuit breaker that includes means for preventing short-circuit overcurrent
JP6477075B2 (ja) 2015-03-17 2019-03-06 東京エレクトロン株式会社 原料ガス供給装置及び成膜装置
JP2016178223A (ja) 2015-03-20 2016-10-06 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
JP6484478B2 (ja) 2015-03-25 2019-03-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
SG11201706227SA (en) 2015-03-26 2017-10-30 Murata Machinery Ltd Supporting device and supporting method for articles
US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
JP6458595B2 (ja) 2015-03-27 2019-01-30 東京エレクトロン株式会社 成膜装置及び成膜方法並びに記憶媒体
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
KR102376982B1 (ko) 2015-04-14 2022-03-21 삼성전자주식회사 세라믹을 이용하여 파티클 저감 효과를 가지는 원격 플라즈마 발생장치
KR20160124028A (ko) 2015-04-16 2016-10-26 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 V 족-함유 필름 형성 조성물 및 v 족-함유 필름의 증착
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
US9343297B1 (en) 2015-04-22 2016-05-17 Asm Ip Holding B.V. Method for forming multi-element thin film constituted by at least five elements by PEALD
US11384432B2 (en) 2015-04-22 2022-07-12 Applied Materials, Inc. Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
TWI615917B (zh) 2015-04-27 2018-02-21 Ｓｕｍｃｏ股份有限公司 承托器及磊晶生長裝置
US10190701B2 (en) 2015-05-07 2019-01-29 Applied Materials, Inc. Corrosion control for chamber components
US10177024B2 (en) 2015-05-12 2019-01-08 Lam Research Corporation High temperature substrate pedestal module and components thereof
JP2016213475A (ja) 2015-05-13 2016-12-15 東京エレクトロン株式会社 シュリンク及び成長方法を使用する極端紫外線感度低下
JP1544542S (zh) 2015-05-14 2019-02-18
JP1547057S (zh) 2015-05-28 2016-04-04
US9941111B2 (en) 2015-05-29 2018-04-10 Infineon Technologies Ag Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layer
US9711350B2 (en) 2015-06-03 2017-07-18 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation
JP1545222S (zh) 2015-06-10 2016-03-07
US9646883B2 (en) 2015-06-12 2017-05-09 International Business Machines Corporation Chemoepitaxy etch trim using a self aligned hard mask for metal line to via
US10053774B2 (en) 2015-06-12 2018-08-21 Asm Ip Holding B.V. Reactor system for sublimation of pre-clean byproducts and method thereof
CN107690487B (zh) 2015-06-12 2021-03-09 应用材料公司 用于半导体外延生长的注射器
US9647071B2 (en) 2015-06-15 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. FINFET structures and methods of forming the same
US9711396B2 (en) 2015-06-16 2017-07-18 Asm Ip Holding B.V. Method for forming metal chalcogenide thin films on a semiconductor device
US10438795B2 (en) 2015-06-22 2019-10-08 Veeco Instruments, Inc. Self-centering wafer carrier system for chemical vapor deposition
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US20160379851A1 (en) 2015-06-29 2016-12-29 Bharath Swaminathan Temperature controlled substrate processing
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
KR102417934B1 (ko) 2015-07-07 2022-07-07 에이에스엠 아이피 홀딩 비.브이. 박막 증착 장치
US10174437B2 (en) 2015-07-09 2019-01-08 Applied Materials, Inc. Wafer electroplating chuck assembly
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US9899291B2 (en) 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
JP6578243B2 (ja) 2015-07-17 2019-09-18 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ ガス供給ノズル、基板処理装置、半導体装置の製造方法およびプログラム
US20170025291A1 (en) 2015-07-22 2017-01-26 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-chamber furnace for batch processing
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US9793097B2 (en) 2015-07-27 2017-10-17 Lam Research Corporation Time varying segmented pressure control
FR3039531A1 (zh) 2015-07-28 2017-02-03 Nexdot
JP6502779B2 (ja) 2015-07-29 2019-04-17 東京エレクトロン株式会社 ガス供給系のバルブのリークを検査する方法
JP6688949B2 (ja) 2015-07-29 2020-04-28 コリア リサーチ インスティチュート オブ スタンダーズ アンド サイエンス ２次元遷移金属ジカルコゲナイド薄膜の製造方法
JP6560924B2 (ja) 2015-07-29 2019-08-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
KR102420087B1 (ko) 2015-07-31 2022-07-12 삼성전자주식회사 반도체 소자의 제조 방법
US20170032992A1 (en) 2015-07-31 2017-02-02 Infineon Technologies Ag Substrate carrier, a method and a processing device
CN107923040B (zh) 2015-07-31 2021-06-25 弗萨姆材料美国有限责任公司 用于沉积氮化硅膜的组合物和方法
US10428421B2 (en) 2015-08-03 2019-10-01 Asm Ip Holding B.V. Selective deposition on metal or metallic surfaces relative to dielectric surfaces
US10087525B2 (en) 2015-08-04 2018-10-02 Asm Ip Holding B.V. Variable gap hard stop design
US10566185B2 (en) 2015-08-05 2020-02-18 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
US10738381B2 (en) 2015-08-13 2020-08-11 Asm Ip Holding B.V. Thin film deposition apparatus
KR102417930B1 (ko) 2015-08-13 2022-07-06 에이에스엠 아이피 홀딩 비.브이. 증착 장치 및 이를 포함하는 증착 시스템
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US20170051402A1 (en) 2015-08-17 2017-02-23 Asm Ip Holding B.V. Susceptor and substrate processing apparatus
JP1549882S (zh) 2015-08-18 2016-05-23
US20170051405A1 (en) 2015-08-18 2017-02-23 Asm Ip Holding B.V. Method for forming sin or sicn film in trenches by peald
US9978610B2 (en) 2015-08-21 2018-05-22 Lam Research Corporation Pulsing RF power in etch process to enhance tungsten gapfill performance
US10410857B2 (en) 2015-08-24 2019-09-10 Asm Ip Holding B.V. Formation of SiN thin films
US9523148B1 (en) 2015-08-25 2016-12-20 Asm Ip Holdings B.V. Process for deposition of titanium oxynitride for use in integrated circuit fabrication
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US9711360B2 (en) 2015-08-27 2017-07-18 Applied Materials, Inc. Methods to improve in-film particle performance of amorphous boron-carbon hardmask process in PECVD system
US10121671B2 (en) 2015-08-28 2018-11-06 Applied Materials, Inc. Methods of depositing metal films using metal oxyhalide precursors
US9455177B1 (en) 2015-08-31 2016-09-27 Dow Global Technologies Llc Contact hole formation methods
US9673042B2 (en) 2015-09-01 2017-06-06 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
US11514096B2 (en) 2015-09-01 2022-11-29 Panjiva, Inc. Natural language processing for entity resolution
JP6486479B2 (ja) 2015-09-03 2019-03-20 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、プログラム、および供給系
JP1546345S (zh) 2015-09-04 2016-03-22
JP6448502B2 (ja) 2015-09-09 2019-01-09 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置及びプログラム
JP6761028B2 (ja) 2015-09-11 2020-09-23 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー コンフォーマルな金属又はメタロイド窒化ケイ素膜を堆積するための方法及びその結果として得られる膜
US9601693B1 (en) 2015-09-24 2017-03-21 Lam Research Corporation Method for encapsulating a chalcogenide material
US10373809B2 (en) 2015-09-25 2019-08-06 Applied Materials Inc. Grooved backing plate for standing wave compensation
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
JP2017069313A (ja) 2015-09-29 2017-04-06 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム
KR102395997B1 (ko) 2015-09-30 2022-05-10 삼성전자주식회사 자기 저항 메모리 소자 및 그 제조 방법
US20180305247A1 (en) 2015-10-02 2018-10-25 Corning Incorporated Methods for treating a glass surface to reduce particle adhesion
US9853101B2 (en) 2015-10-07 2017-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Strained nanowire CMOS device and method of forming
US10695794B2 (en) 2015-10-09 2020-06-30 Asm Ip Holding B.V. Vapor phase deposition of organic films
CN115206844A (zh) 2015-10-09 2022-10-18 应用材料公司 用于epi工艺的晶片加热的二极管激光器
USD810705S1 (en) 2016-04-01 2018-02-20 Veeco Instruments Inc. Self-centering wafer carrier for chemical vapor deposition
USD819580S1 (en) 2016-04-01 2018-06-05 Veeco Instruments, Inc. Self-centering wafer carrier for chemical vapor deposition
US9909214B2 (en) 2015-10-15 2018-03-06 Asm Ip Holding B.V. Method for depositing dielectric film in trenches by PEALD
US9941425B2 (en) 2015-10-16 2018-04-10 Asm Ip Holdings B.V. Photoactive devices and materials
TWI740848B (zh) 2015-10-16 2021-10-01 荷蘭商Ａｓｍ智慧財產控股公司 實施原子層沉積以得閘極介電質
JP6464990B2 (ja) 2015-10-21 2019-02-06 東京エレクトロン株式会社 縦型熱処理装置
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
KR102424720B1 (ko) 2015-10-22 2022-07-25 삼성전자주식회사 수직형 메모리 장치 및 이의 제조 방법
JP6929279B2 (ja) 2015-10-22 2021-09-01 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ＳｉＯおよびＳｉＮを含む流動性膜を堆積させる方法
US20180312966A1 (en) 2015-10-23 2018-11-01 Applied Materials, Inc. Methods For Spatial Metal Atomic Layer Deposition
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786492B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
TWD177995S (zh) 2015-11-18 2016-09-01 Asm Ip Holding Bv 用於半導體製造設備之氣體供應板
US9996004B2 (en) 2015-11-20 2018-06-12 Lam Research Corporation EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
WO2017091345A1 (en) 2015-11-25 2017-06-01 Applied Materials, Inc. New materials for tensile stress and low contact resistance and method of forming
US9905420B2 (en) 2015-12-01 2018-02-27 Asm Ip Holding B.V. Methods of forming silicon germanium tin films and structures and devices including the films
JP6613864B2 (ja) 2015-12-14 2019-12-04 Ｔｄｋ株式会社 ミニエンバイロメント装置
US11257929B2 (en) 2015-12-18 2022-02-22 Intel Corporation Stacked transistors
US20170178899A1 (en) 2015-12-18 2017-06-22 Lam Research Corporation Directional deposition on patterned structures
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
CH711990A2 (de) 2015-12-22 2017-06-30 Interglass Tech Ag Vakuumbeschichtungsanlage zum Beschichten von Linsen.
AT518081B1 (de) 2015-12-22 2017-07-15 Sico Tech Gmbh Injektor aus Silizium für die Halbleiterindustrie
US9633838B2 (en) 2015-12-28 2017-04-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Vapor deposition of silicon-containing films using penta-substituted disilanes
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
TWD178425S (zh) 2016-01-08 2016-09-21 Asm Ip Holding Bv 用於半導體製造設備的電極板
TWD178699S (zh) 2016-01-08 2016-10-01 Asm Ip Holding Bv 用於半導體製造設備的氣體分散板
TWD178698S (zh) 2016-01-08 2016-10-01 Asm Ip Holding Bv 用於半導體製造設備的反應器外壁
TWD178424S (zh) 2016-01-08 2016-09-21 Asm Ip Holding Bv 用於半導體製造設備的氣流控制板
US9412648B1 (en) 2016-01-11 2016-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Via patterning using multiple photo multiple etch
US9496225B1 (en) 2016-02-08 2016-11-15 International Business Machines Corporation Recessed metal liner contact with copper fill
US10865477B2 (en) 2016-02-08 2020-12-15 Illinois Tool Works Inc. Method and system for the localized deposit of metal on a surface
US9570302B1 (en) 2016-02-10 2017-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method of patterning a material layer
JP6538582B2 (ja) 2016-02-15 2019-07-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
KR20180114159A (ko) 2016-02-19 2018-10-17 메르크 파텐트 게엠베하 몰리브덴 카르보닐 전구체를 사용하는 몰리브덴 박막의 증착
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US9666528B1 (en) 2016-02-23 2017-05-30 International Business Machines Corporation BEOL vertical fuse formed over air gap
USD855089S1 (en) 2016-02-29 2019-07-30 Moldman Systems Llc Mixer assembly
US9748145B1 (en) 2016-02-29 2017-08-29 Globalfoundries Inc. Semiconductor devices with varying threshold voltage and fabrication methods thereof
US10073342B2 (en) 2016-03-04 2018-09-11 Micron Technology, Inc. Method of forming patterns
US10018920B2 (en) 2016-03-04 2018-07-10 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography patterning with a gas phase resist
US11114332B2 (en) 2016-03-07 2021-09-07 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
CN108780735B (zh) 2016-03-13 2023-04-21 应用材料公司 用于间隔件应用的氮化硅膜的选择性沉积
US10134672B2 (en) 2016-03-15 2018-11-20 Toshiba Memory Corporation Semiconductor memory device having a stepped structure and contact wirings formed thereon
KR20170107323A (ko) 2016-03-15 2017-09-25 연세대학교 산학협력단 전이금속 칼코겐 화합물 합금 및 그의 제조방법
KR102632725B1 (ko) 2016-03-17 2024-02-05 에이에스엠 아이피 홀딩 비.브이. 기판 지지 플레이트 및 이를 포함하는 박막 증착 장치 및 박막 증착 방법
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
JP6576277B2 (ja) 2016-03-23 2019-09-18 東京エレクトロン株式会社 窒化膜の形成方法
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
KR102262750B1 (ko) 2016-03-28 2021-06-10 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리 장치
JP6566904B2 (ja) 2016-03-29 2019-08-28 東京エレクトロン株式会社 基板処理装置
JP6608753B2 (ja) 2016-03-31 2019-11-20 株式会社ノリタケカンパニーリミテド ＰｄＲｕ合金電極材料およびその製造方法
SG11201808424UA (en) 2016-04-01 2018-10-30 3M Innovative Properties Co Roll-to-roll atomic layer deposition apparatus and method
JP6095825B2 (ja) 2016-04-08 2017-03-15 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
US10049913B2 (en) 2016-04-12 2018-08-14 Tokyo Electron Limited Methods for SiO2 filling of fine recessed features and selective SiO2 deposition on catalytic surfaces
US10388492B2 (en) 2016-04-14 2019-08-20 Fm Industries, Inc. Coated semiconductor processing members having chlorine and fluorine plasma erosion resistance and complex oxide coatings therefor
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
KR101820237B1 (ko) 2016-04-29 2018-01-19 한양대학교 산학협력단 가압식 금속 단원자층 제조 방법, 금속 단원자층 구조체 및 가압식 금속 단원자층 제조 장치
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10115586B2 (en) 2016-05-08 2018-10-30 Tokyo Electron Limited Method for depositing a planarization layer using polymerization chemical vapor deposition
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US9680268B1 (en) 2016-05-18 2017-06-13 Itt Manufacturing Enterprises Llc Genderless electrical connectors
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
USD849662S1 (en) 2016-05-21 2019-05-28 Worthington Industries, Inc. Cylinder support system
US9987747B2 (en) 2016-05-24 2018-06-05 Semes Co., Ltd. Stocker for receiving cassettes and method of teaching a stocker robot disposed therein
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
JP7008918B2 (ja) 2016-05-29 2022-01-25 東京エレクトロン株式会社 選択的窒化シリコンエッチングの方法
US10373820B2 (en) 2016-06-01 2019-08-06 Asm Ip Holding B.V. Deposition of organic films
WO2017212546A1 (ja) 2016-06-07 2017-12-14 株式会社日立国際電気 基板処理装置、炉口部および半導体装置の製造方法並びにプログラム
US10002958B2 (en) 2016-06-08 2018-06-19 The United States Of America, As Represented By The Secretary Of The Navy Diamond on III-nitride device
US10014212B2 (en) 2016-06-08 2018-07-03 Asm Ip Holding B.V. Selective deposition of metallic films
WO2017218561A1 (en) 2016-06-13 2017-12-21 Gvd Coproraton Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles
JP6585551B2 (ja) 2016-06-15 2019-10-02 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
USD785766S1 (en) 2016-06-15 2017-05-02 Asm Ip Holding B.V. Shower plate
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US10217863B2 (en) 2016-06-28 2019-02-26 International Business Machines Corporation Fabrication of a vertical fin field effect transistor with an asymmetric gate structure
US9824893B1 (en) 2016-06-28 2017-11-21 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
KR20240017095A (ko) 2016-06-30 2024-02-06 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
US20160314962A1 (en) 2016-06-30 2016-10-27 American Air Liquide, Inc. Cyclic organoaminosilane precursors for forming silicon-containing films and methods of using the same
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
JP6695975B2 (ja) 2016-07-05 2020-05-20 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、ガスノズルおよび半導体装置の製造方法
US9812319B1 (en) 2016-07-06 2017-11-07 Asm Ip Holding B.V. Method for forming film filled in trench without seam or void
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
EP3267187B1 (en) 2016-07-08 2020-04-15 Volvo Car Corporation Silicon carbide based field effect gas sensor for high temperature applications
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
USD793352S1 (en) 2016-07-11 2017-08-01 Asm Ip Holding B.V. Getter plate
CN109661481B (zh) 2016-07-14 2021-11-30 恩特格里斯公司 使用MoOC14的CVD Mo沉积
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
CN119177427A (zh) 2016-07-19 2024-12-24 应用材料公司 可流动含硅膜的沉积
US9799736B1 (en) 2016-07-20 2017-10-24 International Business Machines Corporation High acceptor level doping in silicon germanium
JP6616258B2 (ja) 2016-07-26 2019-12-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、蓋部カバーおよび半導体装置の製造方法
US20180033614A1 (en) 2016-07-27 2018-02-01 Versum Materials Us, Llc Compositions and Methods Using Same for Carbon Doped Silicon Containing Films
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10177025B2 (en) 2016-07-28 2019-01-08 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US10347547B2 (en) * 2016-08-09 2019-07-09 Lam Research Corporation Suppressing interfacial reactions by varying the wafer temperature throughout deposition
US9865456B1 (en) 2016-08-12 2018-01-09 Micron Technology, Inc. Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
KR102429608B1 (ko) 2016-08-17 2022-08-04 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102613349B1 (ko) 2016-08-25 2023-12-14 에이에스엠 아이피 홀딩 비.브이. 배기 장치 및 이를 이용한 기판 가공 장치와 박막 제조 방법
US10468244B2 (en) 2016-08-30 2019-11-05 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-K films to fill surface features
CA2974387A1 (en) 2016-08-30 2018-02-28 Rolls-Royce Corporation Swirled flow chemical vapor deposition
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
US10269714B2 (en) 2016-09-06 2019-04-23 International Business Machines Corporation Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
US9865455B1 (en) 2016-09-07 2018-01-09 Lam Research Corporation Nitride film formed by plasma-enhanced and thermal atomic layer deposition process
JP6710130B2 (ja) 2016-09-13 2020-06-17 東京エレクトロン株式会社 基板処理装置
JP6710134B2 (ja) 2016-09-27 2020-06-17 東京エレクトロン株式会社 ガス導入機構及び処理装置
KR102600998B1 (ko) 2016-09-28 2023-11-13 삼성전자주식회사 반도체 장치
JP6270952B1 (ja) 2016-09-28 2018-01-31 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体。
JP6550029B2 (ja) 2016-09-28 2019-07-24 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、ノズル基部および半導体装置の製造方法
US9847221B1 (en) 2016-09-29 2017-12-19 Lam Research Corporation Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing
US11926894B2 (en) 2016-09-30 2024-03-12 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US9997606B2 (en) 2016-09-30 2018-06-12 International Business Machines Corporation Fully depleted SOI device for reducing parasitic back gate capacitance
US10573549B2 (en) 2016-12-01 2020-02-25 Lam Research Corporation Pad raising mechanism in wafer positioning pedestal for semiconductor processing
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US20170044664A1 (en) 2016-10-28 2017-02-16 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR101840378B1 (ko) 2016-11-09 2018-03-21 한국화학연구원 올레핀 복분해 반응용 촉매 및 이의 제조방법
JP6737139B2 (ja) 2016-11-14 2020-08-05 東京エレクトロン株式会社 ガスインジェクタ、及び縦型熱処理装置
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
KR102147174B1 (ko) 2016-11-18 2020-08-28 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반응관 구조 및 반도체 장치의 제조 방법
JP6804270B2 (ja) 2016-11-21 2020-12-23 東京エレクトロン株式会社 基板処理装置、および基板処理方法
US20180148832A1 (en) 2016-11-25 2018-05-31 Applied Materials, Inc. Methods for depositing flowable carbon films using hot wire chemical vapor deposition
US9991277B1 (en) 2016-11-28 2018-06-05 Sandisk Technologies Llc Three-dimensional memory device with discrete self-aligned charge storage elements and method of making thereof
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
US10186420B2 (en) 2016-11-29 2019-01-22 Asm Ip Holding B.V. Formation of silicon-containing thin films
US11761084B2 (en) 2016-12-02 2023-09-19 Asm Ip Holding B.V. Substrate processing apparatus and method of processing substrate
US10619242B2 (en) 2016-12-02 2020-04-14 Asm Ip Holding B.V. Atomic layer deposition of rhenium containing thin films
JP6824717B2 (ja) 2016-12-09 2021-02-03 東京エレクトロン株式会社 ＳｉＣ膜の成膜方法
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
US20190273133A1 (en) 2016-12-14 2019-09-05 Intel Corporation Transistor source/drain amorphous interlayer arrangements
KR102762543B1 (ko) 2016-12-14 2025-02-05 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
CN110050328A (zh) 2016-12-15 2019-07-23 Asm Ip控股有限公司 半导体处理设备
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US10591078B2 (en) 2016-12-15 2020-03-17 The Boeing Company Fluid flow control device
US9960033B1 (en) 2016-12-16 2018-05-01 Asm Ip Holding B.V. Method of depositing and etching Si-containing film
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US20180174801A1 (en) 2016-12-21 2018-06-21 Ulvac Technologies, Inc. Apparatuses and methods for surface treatment
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
JP6862821B2 (ja) 2016-12-26 2021-04-21 東京エレクトロン株式会社 成膜装置、成膜方法及び断熱部材
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10049426B2 (en) 2017-01-03 2018-08-14 Qualcomm Incorporated Draw call visibility stream
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
WO2018136652A1 (en) 2017-01-18 2018-07-26 Tokyo Electron Limited Method of preferential silicon nitride etching using sulfur hexafluoride
JP1584906S (zh) 2017-01-31 2017-08-28
JP1584241S (zh) 2017-01-31 2017-08-21
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
JP2018133471A (ja) 2017-02-16 2018-08-23 漢民科技股▲分▼有限公司 気相成膜装置
JP2018148143A (ja) 2017-03-08 2018-09-20 株式会社東芝 シャワープレート、処理装置、及び吐出方法
US11081337B2 (en) 2017-03-15 2021-08-03 Versum Materials U.S., LLC Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials
US10629415B2 (en) 2017-03-28 2020-04-21 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrate
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10460932B2 (en) 2017-03-31 2019-10-29 Asm Ip Holding B.V. Semiconductor device with amorphous silicon filled gaps and methods for forming
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
USD876504S1 (en) 2017-04-03 2020-02-25 Asm Ip Holding B.V. Exhaust flow control ring for semiconductor deposition apparatus
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
US10510590B2 (en) 2017-04-10 2019-12-17 Lam Research Corporation Low resistivity films containing molybdenum
US9984869B1 (en) 2017-04-17 2018-05-29 Asm Ip Holding B.V. Method of plasma-assisted cyclic deposition using ramp-down flow of reactant gas
US10242879B2 (en) 2017-04-20 2019-03-26 Lam Research Corporation Methods and apparatus for forming smooth and conformal cobalt film by atomic layer deposition
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US11501965B2 (en) 2017-05-05 2022-11-15 Asm Ip Holding B.V. Plasma enhanced deposition processes for controlled formation of metal oxide thin films
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US20180325414A1 (en) 2017-05-12 2018-11-15 Tech4Imaging Llc Electro-magneto volume tomography system and methodology for non-invasive volume tomography
US20180331117A1 (en) 2017-05-12 2018-11-15 Sandisk Technologies Llc Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereof
US10153195B1 (en) 2017-05-18 2018-12-11 Micron Technology, Inc. Semiconductor constructions comprising dielectric material
KR102417931B1 (ko) 2017-05-30 2022-07-06 에이에스엠 아이피 홀딩 비.브이. 기판 지지 장치 및 이를 포함하는 기판 처리 장치
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US10246777B2 (en) 2017-06-12 2019-04-02 Asm Ip Holding B.V. Heater block having continuous concavity
KR102474876B1 (ko) 2017-06-15 2022-12-07 삼성전자주식회사 텅스텐 전구체 및 이를 이용한 텅스텐 함유막의 형성 방법
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
WO2019005527A1 (en) 2017-06-29 2019-01-03 Commscope Technologies Llc INTERNAL CONTACT FOR COAXIAL CABLE
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
TWI794238B (zh) 2017-07-13 2023-03-01 荷蘭商Ａｓｍ智慧財產控股公司 於單一加工腔室中自半導體膜移除氧化物及碳之裝置及方法
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
KR102481410B1 (ko) 2017-07-31 2022-12-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
USD867867S1 (en) 2017-07-31 2019-11-26 Ge Healthcare Bio-Sciences Corp. Tubing clamp
USD859136S1 (en) 2017-07-31 2019-09-10 Ge Healthcare Bio-Sciences Corp. Tubing clamp
TWI815813B (zh) 2017-08-04 2023-09-21 荷蘭商Ａｓｍ智慧財產控股公司 用於分配反應腔內氣體的噴頭總成
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11358113B2 (en) 2017-08-08 2022-06-14 H Quest Vanguard, Inc. Non-thermal micro-plasma conversion of hydrocarbons
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
TWI778102B (zh) 2017-08-09 2022-09-21 荷蘭商Ａｓｍ智慧財產控股公司 用於儲存基板用之卡匣的儲存設備及備有其之處理設備
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US10763108B2 (en) 2017-08-18 2020-09-01 Lam Research Corporation Geometrically selective deposition of a dielectric film
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US20190067095A1 (en) 2017-08-30 2019-02-28 Asm Ip Holding B.V. Layer forming method
US20190067014A1 (en) 2017-08-30 2019-02-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US20190067003A1 (en) 2017-08-30 2019-02-28 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US10106892B1 (en) 2017-08-31 2018-10-23 Globalfoundries Inc. Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10530143B2 (en) 2017-09-21 2020-01-07 Accessesp Uk Limited Stress control cones for downhole electrical power system tubing encapsulated power cables
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR20200074263A (ko) 2017-11-19 2020-06-24 어플라이드 머티어리얼스, 인코포레이티드 금속 표면들 상의 금속 산화물들의 ald를 위한 방법들
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7206265B2 (ja) 2017-11-27 2023-01-17 エーエスエム アイピー ホールディング ビー．ブイ． クリーン・ミニエンバイロメントを備える装置
TWI779134B (zh) 2017-11-27 2022-10-01 荷蘭商Ａｓｍ智慧財產控股私人有限公司 用於儲存晶圓匣的儲存裝置及批爐總成
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US11037780B2 (en) 2017-12-12 2021-06-15 Asm Ip Holding B.V. Method for manufacturing semiconductor device with helium-containing gas
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
US20190189447A1 (en) 2017-12-19 2019-06-20 Lam Research Corporation Method for forming square spacers
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
WO2019142055A2 (en) 2018-01-19 2019-07-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
CN108389798B (zh) 2018-01-24 2021-02-02 信利（惠州）智能显示有限公司 刻蚀方法、低温多晶硅薄膜晶体管及amoled面板
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
JP7447004B2 (ja) 2018-01-26 2024-03-11 アプライド マテリアルズ インコーポレイテッド 窒化ケイ素の薄膜のための処理方法
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US20190249303A1 (en) 2018-02-09 2019-08-15 Asm Ip Holding B.V. Chemical precursors and methods for depositing a silicon oxide film on a substrate utilizing chemical precursors
WO2019158960A1 (en) 2018-02-14 2019-08-22 Asm Ip Holding B.V. A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11087961B2 (en) 2018-03-02 2021-08-10 Lam Research Corporation Quartz component with protective coating
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
US10779380B2 (en) 2018-03-21 2020-09-15 Abl Ip Holding Llc Power over ethernet exit signage
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR102600229B1 (ko) 2018-04-09 2023-11-10 에이에스엠 아이피 홀딩 비.브이. 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법
JP6519897B2 (ja) 2018-04-10 2019-05-29 シンフォニアテクノロジー株式会社 パージノズルユニット、ロードポート
US10782613B2 (en) 2018-04-19 2020-09-22 International Business Machines Corporation Polymerizable self-assembled monolayers for use in atomic layer deposition
US20190330740A1 (en) 2018-04-30 2019-10-31 Asm Ip Holding B.V. Substrate processing apparatus and method
US10580645B2 (en) 2018-04-30 2020-03-03 Asm Ip Holding B.V. Plasma enhanced atomic layer deposition (PEALD) of SiN using silicon-hydrohalide precursors
US11639547B2 (en) 2018-05-03 2023-05-02 Applied Materials, Inc. Halogen resistant coatings and methods of making and using thereof
TWI843623B (zh) 2018-05-08 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
US12272527B2 (en) 2018-05-09 2025-04-08 Asm Ip Holding B.V. Apparatus for use with hydrogen radicals and method of using same
KR20190129718A (ko) 2018-05-11 2019-11-20 에이에스엠 아이피 홀딩 비.브이. 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조
CN112020676A (zh) 2018-05-11 2020-12-01 朗姆研究公司 制造euv可图案化硬掩模的方法
AT520629B1 (de) 2018-05-22 2019-06-15 Sico Tech Gmbh Injektor aus Silizium für die Halbleiterindustrie
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US20190368040A1 (en) 2018-06-01 2019-12-05 Asm Ip Holding B.V. Infiltration apparatus and methods of infiltrating an infiltrateable material
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 水氣降低的晶圓處置腔室
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US10483154B1 (en) 2018-06-22 2019-11-19 Globalfoundries Inc. Front-end-of-line device structure and method of forming such a front-end-of-line device structure
JP7674105B2 (ja) 2018-06-27 2025-05-09 エーエスエム・アイピー・ホールディング・ベー・フェー 金属含有材料ならびに金属含有材料を含む膜および構造体を形成するための周期的堆積方法
CN112292477A (zh) 2018-06-27 2021-01-29 Asm Ip私人控股有限公司 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR102686758B1 (ko) 2018-06-29 2024-07-18 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
TWI827645B (zh) 2018-08-23 2024-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理設備及方法
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
CN110970344B (zh) 2018-10-01 2024-10-25 Asmip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US20200111669A1 (en) 2018-10-04 2020-04-09 Asm Ip Holding B.V. Method for depositing oxide film by peald using nitrogen
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
US12378665B2 (en) 2018-10-26 2025-08-05 Asm Ip Holding B.V. High temperature coatings for a preclean and etch apparatus and related methods
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR102748291B1 (ko) 2018-11-02 2024-12-31 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US20200181770A1 (en) 2018-12-05 2020-06-11 Asm Ip Holding B.V. Method of forming a structure including silicon nitride on titanium nitride and structure formed using the method
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム

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