TWI801673B - 用來蝕刻含碳特徵之方法 - Google Patents
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Abstract
本發明提供用來蝕刻含碳特徵之方法。該等方法可包括：於反應空間中提供其上形成有含碳特徵之基板；將氦氣及氧化供應至反應空間；於反應空間內自包含氦氣及氧化氣體之氣體混合物產生電漿；及利用該電漿各向異性地蝕刻含碳特徵以引起含碳特徵之橫向蝕刻。
Description
本揭示大致係關於蝕刻含碳特徵之方法，及特定而言係用於各向異性地蝕刻含碳特徵藉此減小含碳特徵之橫向寬度的方法。
半導體裝置，諸如互補金屬氧化物半導體（complementary metal-oxide-semiconductor，CMOS）裝置，其結構的縮小導致積體電路之速度及密度的顯著改進。然而，習知的裝置縮放面臨未來技術節點之巨大挑戰。
減小半導體裝置特徵的尺寸及間隔對用來形成此等特徵之方法產生愈來愈多的需求。舉例來說，歸因於由光學元件及輻射波長所造成的限制，許多習知之光微影方法無法容易地形成臨界尺寸小於大約40奈米的特徵。已使用電子束(E-Beam)微影及極紫外(EUV)微影來形成臨界尺寸小於40奈米之特徵，但其一般需要複雜的製程及高昂的成本。
半導體裝置結構的圖案化及蝕刻可利用含碳材料(諸如，比方說，化學光阻劑)來達成。舉例來說，將圖案蝕刻至半導體裝置結構中之製程可包括使用遮罩，視形成期望圖案之需要，以選擇性地容許蝕刻劑移除半導體裝置結構的有用層。通常，遮罩係經由將一層液體光阻劑旋塗於待蝕刻之材料上來形成。然後使光阻劑上之期望圖案暴露至一形式的輻射，例如，通過使用光罩及紫外光。取決於光阻劑係正型抗蝕劑或負型抗蝕劑，光阻劑之經暴露區域成為可溶解或不可溶解於對應的化學顯影劑。然後移除光阻劑的可溶解部分，且剩餘的光阻劑成為用來選擇性地容許蝕刻劑在不具有光阻劑保護之區域中移除下層材料的遮罩。
當由含碳材料形成之圖案化(例如，光阻劑特徵)的臨界尺寸(CD)大於半導體裝置結構上所需的特徵尺寸時，會產生問題。一種對於包含含碳材料之特徵的臨界尺寸(諸如，比方説，光阻劑線條)之減小方法，係使特徵暴露至蝕刻條件，一般亦稱為「修整」。舉例來說，可利用修整製程來減小含碳特徵的臨界尺寸，例如，光阻劑線條的橫向寬度。修整製程通常採用形成游離電漿來移除含碳特徵之部分，藉此減小特徵的橫向寬度，即減小光阻劑線條的線寬。然而，經利用來蝕刻含碳抗蝕劑特徵的游離電漿一般包含垂直照射至含碳特徵設置於其上之基板的離子，其可導致優先減小含碳抗蝕劑特徵之高度而非較佳地減小橫向寬度。因此，需要的方法為，相較於含碳抗蝕劑特徵之高度蝕刻速率，能夠簡單地提高橫向蝕刻速率，以實現含碳特徵之臨界尺寸的減小，同時維持含碳特徵之實質高度用於後續製程。
根據本揭示的至少一個具體例，揭示一種用於蝕刻含碳特徵的方法。該方法可包括：於反應空間中提供其上形成有含碳特徵之基板；將氦氣及氧化氣體供應至反應空間；於反應空間內自包含氦氣及氧化氣體之氣體混合物產生電漿；及利用該電漿各向異性地蝕刻含碳特徵以引起碳基特徵之橫向蝕刻。
為了總結本發明及相對於先前技術所達成的優點，本發明之某些目的和優點已說明如上。當然，應理解，並非根據本發明之任何特定具體例皆必定達成所有此等目標或優點。因此，例如，本領域技術人士將瞭解到，本發明可以達成或優化如本文中所教示或提示的一個優點或一群優點的方式來實施或進行，但未必達成如本文中所教示或提示的其他目的或優點。
所有該等具體例皆意欲屬於本文所揭示之本發明範疇中。藉由參考附圖之某些具體例的下述詳細說明，該等及其他具體例對本領域技術人士來說將變得更加明顯易懂，且本發明並不限於所揭示之任何特定具體例。
雖然在下文中揭示特定具體例及實例，但是該項技藝者可以理解，本發明延伸超出本發明所具體揭示之具體例及/或用途及其明顯修改及其均等物。因此，其目的在於所揭示之本發明的範圍不應受限於下文所描述之特定揭示的具體例。
如本文所使用，術語「基板」可指可使用或在其上可形成裝置、電路或膜之任何下層材料。
於說明書中，可以理解，用語「於...上」或「於...上方」可用來描述相對位置關係。另一元件或層可直接於所述層上，或者可以在其間插入另一層（中間層）或元件，或是可以在所述層上設置層但不完全覆蓋所述層的表面。因此，除非單獨使用「直接」一詞，否則用語「於...上」或「於...上方」將解釋為相對概念。類似於此，可以理解，用語「於...下」、「於...之下」或「於...下方」將解釋為相對概念。
本揭示之具體例可包括用於蝕刻設置於基板上之含碳特徵的方法，及特定言之用於在反應空間內利用電漿來減小含碳抗蝕劑特徵之橫向寬度(即臨界尺寸)的方法，其中該電漿係自至少包含氦氣及氧化氣體的氣體混合物產生。
已知曉用於改良含碳抗蝕劑特徵之橫向寬度與含碳抗蝕劑特徵之高度相比之蝕刻比的方法，且一般包括用於硬化含碳抗蝕劑特徵之經暴露上表面的方法。舉例來說，硬化含碳抗蝕劑特徵之經暴露上表面可減小來自電漿之垂直衝擊離子減小含碳特徵之高度的能力。經利用來硬化含碳抗蝕劑特徵之經暴露上表面之方法可包括利用高能粒子照射抗蝕劑特徵之表面，諸如，比方說，經由利用電子束或離子束進行照射。然而，該等照射含碳特徵以減小於抗蝕劑特徵之垂直方向中之蝕刻速率(即減小抗蝕劑特徵之高度之蝕刻速率)的方法涉及添加另一複雜的製程步驟，且因此，需要不需另外的製程(諸如，比方說，高能照射製程)而用來「修整」含碳特徵的方法。
因此，本揭示之具體例可包括用來蝕刻含碳特徵之方法，該等方法包括：於反應空間中提供其上形成有含碳特徵之基板；將氦氣及氧化氣體供應至反應空間；於反應空間內自包含氦氣及氧化氣體之氣體混合物產生電漿；及利用該電漿各向異性地蝕刻含碳特徵以引起含碳特徵之橫向蝕刻。
本揭示之方法參考圖1以及參考圖2A及圖2B進行更詳細地描述，圖1包含說明例示性方法100之製程流程圖，圖2A及圖2B說明作為例示性方法100之製程流程之一部分形成的半導體結構的橫剖面示意圖。
方法100可始於製程方塊110，其包括於反應空間中提供其上設置有含碳特徵之基板。更詳言之，該製程可包括提供基板，諸如半導體結構200之基板202(圖2A)。在本揭示之一些具體例中，基板202可包含平面基板（如圖2A所繪示）或圖案化基板。基板202可包含一或多種材料，包括，但不限於，矽(Si)、鍺(Ge)、鍺錫(GeSn)、矽鍺(SiGe)、矽鍺錫(SiGeSn)、碳化矽(SiC)、或第III族-第V族半導體材料，諸如，比方說，砷化鎵(GaAs)、磷化鎵(GaP)、或氮化鎵(GaN)。於本揭示之一些具體例中，基板202可包含工程化基板，其中表面半導體層設置在塊體支撐件上方，其間設置有插入的掩埋氧化物(BOX)。
圖案化基板可以包括如下基板：其可以包含形成在基板表面之中或之上的半導體裝置結構，例如，圖案化基板可以包含部分製造的半導體裝置結構，諸如，比方說，電晶體及/或記憶體元件。在一些具體例中，基板可含有單晶表面及/或一個或多個可包含非單晶表面(諸如多晶表面及/或非晶表面)之第二表面。單晶表面可包含，例如，矽(Si)、矽鍺(SiGe)、鍺錫(GeSn)、或鍺(Ge)中之一者或多者。多晶或非晶表面可包括介電材料，諸如氧化物、氮氧化物或氮化物，諸如，比方說，氧化矽及氮化矽。
於本揭示之一些具體例中，基板202具有設置於其上之含碳特徵204，例如，含碳特徵可設置於基板202之上表面上，或直接設置於其上。在一些具體例中，含碳特徵204可包含可最終經利用作為圖案化遮蔽材料的化學光阻劑。於本揭示之一些具體例中，含碳特徵204可包含光阻劑、化學放大抗蝕劑(CAR)、極紫外(EUV)抗蝕劑、或非晶形碳材料中之至少一者。在一些具體例中，含碳特徵204可藉由技藝中熟知且因此不描述於此的標準光微影/電子束及顯影製程形成。在一些具體例中，含碳特徵可包括線條特徵、開孔特徵、間隙特徵、圓形特徵、或任何可視曝光及相關顯影製程形成之幾何形狀、尺寸及組態的含碳抗蝕劑材料。
在一些具體例中，含碳特徵204可包括光阻劑線條特徵(如繪示於圖2A中之橫剖面)，其中該光阻劑線條可具有蝕刻前高度(H1
)、蝕刻前橫向寬度(W1
)、及蝕刻前縱橫比(H1
:W1
)。
可利用來確定含碳特徵(諸如光阻劑線條)之品質的一個參數係線條邊緣粗糙度(LER)，其可包括沿特徵長度發生之抗蝕劑線條特徵之寬度的變化，例如，可將檢視沿特徵之一邊緣之含碳特徵之寬度的變化稱為LER。當特徵尺寸減小至100奈米左右或以下時，LER可成為重要參數，且就低於大約50奈米之特徵而言可成為線寬控制問題的顯著來源。LER可特徵在於線條邊緣與直線的3-σ偏差，且隨著含碳特徵之臨界尺寸的尺寸減小而一般更成為重大問題。
在本揭示之一些具體例中，在半導體加工設備(諸如，比方說，經組態用於將電漿供應至半導體結構200之表面的半導體加工設備)之反應空間中提供包含基板202與設置於其上之含碳特徵204的半導體結構200。在一些具體例中，半導體加工設備可包括電漿蝕刻設備，諸如，比方說，反應性離子蝕刻器(RIE)、感應耦合電漿(ICP)蝕刻器、或電子迴旋加速器諧振(ECR)蝕刻器。在一些具體例中，半導體加工設備可包括基於電漿的沉積系統，諸如，比方說，電漿增強型化學氣相沉積(PECVD)系統、或電漿增強型原子層沉積(PEALD)系統。
在本揭示之一些具體例中，可將半導體結構200設置於經組態用來於反應空間內產生電漿的電極之間的反應空間內，例如，可將半導體結構200置於底部電極上及可將頂部電極設置於半導體結構200上方。在本揭示之一些具體例中，底部電極可包括一或多個溫度控制元件，其中底部電極之溫度可視期望的製程參數來提高或降低。舉例來說，底部電極之溫度可係低於大約200°C，或低於大約100°C，或甚至低於大約25°C。在一些具體例中，底部電極之溫度可係介於大約25°C與大約200°C之間。
在本揭示之一些具體例中，電漿的產生可遠離於反應空間發生，且隨後可將電漿引入至反應空間中來與設置於基板202上之含碳特徵204交互作用。
例示性的方法100(圖1)可以製程方塊120繼續，其包括將氦氣及氧化氣體供應至反應空間中。在本揭示之一些具體例中，氧化氣體可包括分子氧(O2
)、臭氧(O3
)、一氧化氮(NO)、一氧化二氮(N2
O)、二氧化氮(NO2
)、或二氧化碳(CO2
)中之至少一者。在一些特定具體例中，氧化氣體可包括分子氧(O2
)。在一些具體例中，氦氣流量對氧化氣體流量之流動速率比(氦氣流量：氧化氣體流量)可在大約0.5:1至大約20:1之範圍內。
將氦氣及氧化氣體供應至反應空間可於反應空間內形成至少包含氦氣及氧化氣體的氣體混合物。在本揭示之一些具體例中，反應空間內之氣體混合物包含在大約0.5:1至大約20:1範圍內之氦氣對氧化氣體的體積比。
除了控制基板之溫度及反應空間中氦氣及氧化氣體之流量外，本揭示之具體例亦可控制反應空間內之壓力。舉例來說，可將反應空間內之壓力控制在低於800帕斯卡(Pascal)、或低於600帕斯卡、或低於400帕斯卡、或低於200帕斯卡、或甚至低於150帕斯卡。在本揭示之一些具體例中，可將反應空間內之壓力控制在介於大約150帕斯卡與大約800帕斯卡之間。
例示性的方法100(圖1)可以製程方塊130繼續，其包括於反應空間內自包含氦氣及氧化氣體之氣體混合物產生電漿。在一些具體例中，可將半導體結構200(圖2A)設置於經組態用於將電漿供應至半導體結構200之表面之半導體加工設備的反應空間中。作為一非限制性實例，在一些具體例中，可將半導體結構200設置於反應空間中的電極之間，及自氣體混合物產生電漿可進一步包括於電極之間施加低於100瓦、或低於50瓦、或低於30瓦、或低於20瓦、或甚至低於15瓦的RF功率。在本揭示之一些具體例中，於電極之間供應的RF功率可係介於大約15瓦與大約100瓦之間。
在一些具體例中，自包含氦氣及氧化氣體之氣體混合物產生電漿可進一步包括產生氧自由基，其可被利用來各向異性地蝕刻設置於反應空間中之含碳特徵。不受任何特定理論束縛，但咸信利用包含氦氣及氧化氣體之氣體混合物可增加電漿中氧自由基之產生，及藉此提高含碳特徵的橫向蝕刻速率。
作為一非限制性實例，圖3繪示來自若干實例電漿的光學發射光譜(OES)，其中由線條300表示的數據係得自由包含氦氣及分子氧(O2
)之氣體混合物產生的電漿，由線條302表示的數據係得自由包含氬氣及分子氧(O2
)之氣體混合物產生的電漿，及由線條304表示的數據係得自由分子氧(O2
)產生的電漿。
實例電漿中之氧自由基的密度可經由檢測於圖3之OES光譜之777奈米處的峰強度來確定。檢測圖3之OES中之777奈米峰清楚地指示自包含氦氣及分子氧(O2
)之氣體混合物產生之電漿(標示為300的數據)的光譜強度顯著地較高，且因此於包含氦氣及分子氧(O2
)兩者之電漿中的氧自由基密度最大。
例示性的方法100(圖1)可以製程方塊140繼續，其包括利用電漿各向異性地蝕刻含碳特徵以引起含碳特徵之橫向蝕刻。更詳言之，圖2B繪示半導體結構206，其包括於暴露至自包含氦氣及氧化氣體之氣體混合物產生之電漿後之例示性的經蝕刻含碳特徵204`。如圖2B中所繪示，當與具有高度H1
及橫向寬度W1
之蝕刻前含碳特徵相比時，例示性的含碳特徵204`已達到H2
之降低高度及W2
之降低橫向寬度。舉例來說，含碳特徵204`之高度的降低可表示為ΔH (即，H1
-H2
)及含碳特徵204`之橫向寬度的降低可表示為ΔW (即，W1
-W2
)。在本揭示之一些具體例中，利用電漿各向異性地蝕刻含碳特徵可進一步包括至少1:1.2之橫向蝕刻(ΔW)對高度蝕刻(ΔH)的比(即，ΔW:ΔH)。
在本揭示之一些具體例中，橫向蝕刻含碳特徵可進一步包括減小含碳特徵的線條邊緣粗糙度(LER)。
作為一非限制性實例，圖4A及4B繪示極紫外(EUV)抗蝕劑圖案在蝕刻前(圖4A)及蝕刻後(圖4B)於相同放大程度下的橫剖面掃描穿透電子顯微鏡(STEM)影像。更詳言之，圖4A繪示在經蝕刻前於基板402上之EUV抗蝕劑圖案400的STEM影像，應注意於EUV抗蝕劑400周圍觀察到的暗區域係歸因於在STEM成像過程中所利用的鉑薄膜。在非限制性的實例具體例中，將其上設置有EUV抗蝕劑400之基板402引入至電漿增強型原子層沉積(PEALD)設備的反應空間中，及將氦氣及分子氧(O2
)之混合物以1:1之流動速率比引入至反應空間中，流動速率由質量流量控制器監控。電漿係於反應空間中自包含氦氣及分子氧之氣體混合物產生。用來產生電漿之RF功率係15瓦及EUV抗蝕劑圖案400暴露至電漿的時間係大約10秒。圖4B繪示於蝕刻後基板402上之EUV抗蝕劑圖案400`的STEM影像，其中EUV抗蝕劑圖案400`之橫向寬度已減小(ΔW) 2.75奈米之量及EUV抗蝕劑圖案400`之高度已減小(ΔH) 3.30奈米之量，從而產生1:1.2之ΔW:ΔH比。
經蝕刻、或「經修整」的含碳特徵，諸如具有經減小橫向寬度之光阻劑線條，可被利用於若干應用。舉例來說，在一些具體例中，本揭示之方法可進一步包括利用經蝕刻的含碳特徵作為蝕刻遮罩來蝕刻基板的一部分。更詳言之，且參照圖5A，半導體結構500可包括經蝕刻的含碳特徵204`，諸如，比方說，具有經減小橫向寬度之光阻劑線條圖案，其可被利用作為蝕刻遮罩來於下層基板502中製造圖案，經蝕刻至基板中之圖案具有低於不利用經蝕刻含碳特徵204`所可達成者的臨界尺寸。如圖5A中所繪示，經蝕刻的含碳特徵204`遮蔽(即覆蓋或保護)下層基板502的選定部分，使得基板的經暴露區域(即沒有上層含碳特徵的該等區域)可暴露至一或多種蝕刻劑，諸如，比方說，濕式蝕刻劑或電漿蝕刻劑，從而產生經蝕刻的基板502。
在其他實例具體例中，可利用經蝕刻的含碳特徵作為遮罩來保護基板表面的選定區域不受表面改質物種影響。舉例來說，且參照圖5B，半導體結構504可包括經蝕刻的含碳特徵204`，諸如，比方說，具有經減小橫向寬度之光阻劑線條，其可設置於基板506上方並選擇性地遮蔽(即覆蓋或保護)基板的選定區域使不受表面改質物種影響。基板506之未被經蝕刻的含碳特徵204`覆蓋的部分(即基板506之經暴露表面508)可經一或多種表面改質物種處理，藉此改變經暴露表面508的表面性質。舉例來說，經暴露的表面508可經氧前驅體處理以氧化基板506之表面的選定部分。
在又其他的實例具體例中，文中揭示之方法可進一步包括將一層材料沉積於經蝕刻的含碳特徵上方。作為非限制性實例，可利用等形沉積方法將一層材料沉積於經蝕刻的含碳特徵204`上方，以於經蝕刻的含碳特徵上方形成一等形膜，如由包括設置於基板514上方之等形膜512的半導體結構510所繪示(圖5C)，或可利用非等形沉積方法將一層材料沉積於經蝕刻的含碳特徵204`上方，以形成包括設置於基板520上方之非等形膜518的半導體結構516(圖5D)。在本揭示之一些具體例中，該層材料可包括氧化矽、氮化矽、碳化矽、氧碳化矽、氧化鈦、或氮化鈦中之至少一者。
上述揭示內容之實例具體例並未限制本發明的範圍，因為此等具體例僅為本發明之具體例的實例，本發明的範圍係由所附申請專利範圍及其合法均等物來界定。任何等效具體例皆旨在本發明之範疇內。實際上，熟習此項技術者自前述描述將明白除了本文展示且描述以外的本發明各種修飾，如所述元件之替代有用組合。此等修飾及具體例亦旨在落在隨附申請專利範圍之範疇內。
100:方法
110:製程方塊
120:製程方塊
130:製程方塊
140:製程方塊
200:半導體結構
202:基板
204:含碳特徵
204`:經蝕刻的含碳特徵
206:半導體結構
300:線條
302:線條
304:線條
400:EUV抗蝕劑圖案
400`:EUV抗蝕劑圖案
402:基板
500:半導體結構
502:基板
504:半導體結構
506:基板
508:經暴露表面
510:半導體結構
512:等形膜
514:基板
516:半導體結構
518:非等形膜
520:基板
儘管本說明書以具體指出且明確主張視為本發明之具體例的申請專利範圍作結，但在結合隨附圖式閱讀時可更容易自本揭示之具體例之某些實例的描述來確定本揭示之具體例的優勢，在隨附圖式中：
圖1說明根據本揭示之具體例的例示性方法所例示的製程流程圖；
圖2A及圖2B說明根據本揭示之具體例的例示性製程流程期間所形成之半導體結構的橫剖面示意圖；
圖3繪示根據本揭示之具體例來自若干例示性電漿的光學發射光譜(OES)；
圖4A及圖4B繪示根據本揭示之具體例形成之半導體結構的掃描穿透電子顯微鏡(STEM)影像；及
圖5A-5D繪示根據本揭示之具體例之經蝕刻含碳特徵之應用的橫剖面示意圖。
應理解，圖式中之元件係為簡單及清楚起見而繪示且未必按比例繪製。舉例而言，附圖中一些元件之尺寸可相對於其他元件而放大，以幫助提昇對本揭示內容所說明之具體例的理解。
100:方法
110:製程方塊
120:製程方塊
130:製程方塊
140:製程方塊
Claims (19)
- 一種用來蝕刻含碳特徵之方法，該方法包括：於反應空間中提供其上形成有含碳特徵之基板；將氦氣及氧化氣體供應至該反應空間；自包含該氦氣及該氧化氣體之氣體混合物產生電漿；及利用該電漿各向異性地蝕刻該含碳特徵以引起該含碳特徵之橫向蝕刻，其中該基板係設置於該反應空間中的電極之間，且自該氣體混合物產生電漿進一步包括於該等電極之間施加低於50W的RF功率，及其中利用該電漿各向異性地蝕刻該含碳特徵進一步包括至少1：1.2之該含碳特徵之橫向蝕刻(△W)對高度蝕刻(△H)的比。
- 如請求項1之方法，其中該含碳特徵包含光阻劑、化學放大抗蝕劑(CAR)、極紫外(EUV)抗蝕劑、或非晶形碳中之至少一者。
- 如請求項1之方法，其中該含碳特徵之橫向蝕刻減小該含碳特徵的線條邊緣粗糙度(LER)。
- 如請求項1之方法，其中該氧化氣體包括臭氧(O3)、一氧化氮(NO)、一氧化二氮(N2O)、二氧化氮(NO2)、或二氧化碳(CO2)中之至少一者。
- 如請求項4之方法，其中該氧化氣體包括臭氧(O3)、二氧化氮(NO2)、或二氧化碳(CO2)中之至少一者。
- 如請求項1之方法，其進一步包括利用該經蝕刻的含碳特徵作為蝕刻遮罩來蝕刻該基板的一部分。
- 如請求項1之方法，其中產生電漿包括在該反應空間內產生電漿。
- 一種用來蝕刻含碳特徵之方法，該方法包括：於反應空間中提供其上形成有含碳特徵之基板；將氦氣及氧化氣體供應至該反應空間； 自包含該氦氣及該氧化氣體之氣體混合物產生電漿；及利用該電漿各向異性地蝕刻該含碳特徵以引起該含碳特徵之橫向蝕刻，其中該基板係設置於該反應空間中的電極之間，且自該氣體混合物產生電漿進一步包括於該等電極之間施加低於15W的RF功率。
- 如請求項8之方法，其中利用該電漿各向異性地蝕刻該含碳特徵進一步包括至少1：1.2之該含碳特徵之橫向蝕刻(△W)對高度蝕刻(△H)的比。
- 一種用來蝕刻含碳特徵之方法，該方法包括：於反應空間中提供其上形成有含碳特徵之基板；將氦氣及氧化氣體供應至該反應空間；自包含該氦氣及該氧化氣體之氣體混合物產生電漿；及利用該電漿各向異性地蝕刻該含碳特徵以引起該含碳特徵之橫向蝕刻，其中該基板係設置於該反應空間中的電極之間，且自該氣體混合物產生電漿進一步包括於該等電極之間施加低於50W的RF功率，其中該反應空間內之該氣體混合物包含在大約0.5：1至大約20：1範圍內之該氦氣對該氧化氣體的體積比。
- 一種用來蝕刻含碳特徵之方法，該方法包括：於反應空間中提供其上形成有含碳特徵之基板；將氦氣及氧化氣體供應至該反應空間；自包含該氦氣及該氧化氣體之氣體混合物產生電漿；及利用該電漿各向異性地蝕刻該含碳特徵以引起該含碳特徵之橫向蝕刻，其中該基板係設置於該反應空間中的電極之間，且自該氣體混合物產生電漿進一步包括於該等電極之間施加低於50W的RF功率，其進一步包括利用該經蝕刻的碳特徵遮蔽該基板的選定區域來修飾該基板的經暴露表面。
- 一種用來蝕刻含碳特徵之方法，該方法包括：於反應空間中提供其上形成有含碳特徵之基板；將氦氣及氧化氣體供應至該反應空間；自包含該氦氣及該氧化氣體之氣體混合物產生電漿；及利用該電漿各向異性地蝕刻該含碳特徵以引起該含碳特徵之橫向蝕刻，其中該基板係設置於該反應空間中的電極之間，且自該氣體混合物產生電漿進一步包括於該等電極之間施加低於50W的RF功率，其進一步包括將一層材料沉積於該經蝕刻的含碳特徵上方。
- 如請求項12之方法，其中該層材料係與該經蝕刻的含碳特徵等形。
- 如請求項12之方法，其中該層材料係與該經蝕刻的含碳特徵不等形。
- 如請求項12之方法，其中該層材料包括氧化矽、氮化矽、碳化矽、氧碳化矽、氧化鈦、或氮化鈦。
- 一種用來蝕刻含碳特徵之方法，該方法包括：於反應空間中提供其上形成有含碳特徵之基板；將氦氣及氧化氣體供應至該反應空間；自包含該氦氣及該氧化氣體之氣體混合物產生電漿；及利用該電漿各向異性地蝕刻該含碳特徵以引起該含碳特徵之橫向蝕刻，其中該基板係設置於該反應空間中的電極之間，且自該氣體混合物產生電漿進一步包括於該等電極之間施加低於50W的RF功率，其中該基板係設置於頂部電極與底部電極之間，其中半導體係設置於該底部電極上，其中該頂部電極係設置於該反應空間中的該半導體上方，且其中該底部電極之溫度係低於200℃。
- 一種用來蝕刻含碳特徵之方法，該方法包括：於反應空間中提供其上形成有含碳特徵之基板；將氦氣及氧化氣體供應至該反應空間；自包含該氦氣及該氧化氣體之氣體混合物產生電漿；及利用該電漿各向異性地蝕刻該含碳特徵以引起該含碳特徵之橫向蝕刻，其中該基板係設置於該反應空間中的電極之間，且自該氣體混合物產生電漿進一步包括於該等電極之間施加低於50W的RF功率，其中產生電漿包括遠離該反應空間產生電漿。
- 一種用來蝕刻含碳特徵之方法，該方法包括：於反應空間中提供其上形成有含碳特徵之基板；將氦氣及氧化氣體供應至該反應空間；於該反應空間內自包含該氦氣及該氧化氣體之氣體混合物產生電漿；及利用該電漿各向異性地蝕刻該含碳特徵以引起該含碳特徵之橫向蝕刻，其中該含碳特徵包含化學放大抗蝕劑(CAR)、極紫外(EUV)抗蝕劑、或非晶形碳材料中之至少一者，其中該基板係設置於該反應空間中的電極之間，且自該氣體混合物產生電漿進一步包括於該等電極之間施加低於50W的RF功率，且其中該反應空間內之該氣體混合物包含在大約0.5：1至大約20：1範圍內之該氦氣對該氧化氣體的體積比。
- 一種用來蝕刻含碳特徵之方法，該方法包括：於反應空間中提供其上形成有含碳特徵之基板；將氦氣及氧化氣體供應至該反應空間；於該反應空間內自包含該氦氣及該氧化氣體之氣體混合物產生電漿；及利用該電漿各向異性地蝕刻該含碳特徵以引起該含碳特徵之橫向蝕刻， 其中該反應空間內之壓力係控制在低於800帕斯卡(Pascal)，其中該基板係設置於該反應空間中的電極之間，且自該氣體混合物產生電漿進一步包括於該等電極之間施加低於50W的RF功率，且其中該反應空間內之該氣體混合物包含在大約0.5：1至大約20：1範圍內之該氦氣對該氧化氣體的體積比。
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| TW202036721A (zh) | 2020-10-01 |
| US20200118811A1 (en) | 2020-04-16 |
| KR102869365B1 (ko) | 2025-10-10 |
| KR20200043276A (ko) | 2020-04-27 |
| US10811256B2 (en) | 2020-10-20 |
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