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TWI858421B - 用於改善之前驅物流動的半導體處理腔室 - Google Patents

用於改善之前驅物流動的半導體處理腔室 Download PDF

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TWI858421B
TWI858421B TW111141815A TW111141815A TWI858421B TW I858421 B TWI858421 B TW I858421B TW 111141815 A TW111141815 A TW 111141815A TW 111141815 A TW111141815 A TW 111141815A TW I858421 B TWI858421 B TW I858421B
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天發 陳
迪米奇 路柏曼斯基
鄭順旭
壽南 朴
雷蒙Ｗ 路
馮恩 菲姆
愛德恩Ｃ 隋瑞茲
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美商應用材料股份有限公司
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Abstract

本案公開了用於改善之前驅物流動的半導體處理腔室。示例性半導體處理系統可以包括處理腔室，並且可以包括與處理腔室耦接的遠端電漿單元。示例性系統還可以包括與遠端電漿單元耦接的配接器。配接器可以包括第一端和與第一端相對的第二端。配接器可以在第一端處限定通向中心通道的開口，並且中心通道可以由第一橫截表面面積來表徵。配接器可以在第二端處限定從第二通道離開的出口，並且配接器可以在配接器內、在第一端與第二端之間限定中心通道與第二通道之間的過渡部。配接器可以限定過渡部與配接器的第二端之間的第三通道，並且第三通道可與中心通道和第二通道流體隔離。

Description

用於改善之前驅物流動的半導體處理腔室
本技術涉及半導體系統、製程和設備。更具體地，本技術涉及用於在系統和腔室內遞送前驅物的系統和方法。
積體電路可能通過在基板表面上產生複雜地圖案化的材料層的製程製成。在基板上產生圖案化的材料要求用於暴露材料的去除的受控方法。化學蝕刻用於多種目的，包括將光刻膠中的圖案轉移到下方層、將層薄化，或將已存在於表面上的特徵的側向尺寸薄化。通常，期望具有比蝕刻另一材料更快地蝕刻一種材料以促進例如圖案轉移製程或個別材料移除的蝕刻製程。這種蝕刻製程被稱為對第一材料有選擇性。由於材料、電路和製程的多樣性，蝕刻製程已發展成具有面向於多種材料的可選擇性。
蝕刻製程可基於製程中使用的材料而稱為濕法蝕刻或幹法蝕刻。濕法HF蝕刻優選地移除了在其他介電質和材料上方的氧化矽。然而，濕法製程可能難以穿透一些受限溝槽並有時還可能使剩餘的材料變形。幹法蝕刻製程可以穿透到複雜的特徵和溝槽中，但是可能無法提供可接受的頂部-底部輪廓。隨著在下一代裝置中裝置大小不斷縮小，系統將前驅物遞送到腔室中並通過腔室的方式可能會造成越來越大的影響。由於處理條件的均勻性的重要性不斷增加，腔室設計和系統設置對生產的裝置的品質有重要作用。
因此，需要可用於產生高品質裝置和結構的改善的系統和方法。這些和其他需要通過本技術來解決。
示例性半導體處理系統可以包括處理腔室，並且可以包括與處理腔室耦接的遠端電漿單元。示例性系統還可以包括與遠端電漿單元耦接的配接器。配接器可以包括第一端和與第一端相對的第二端。配接器可以在第一端處限定通向中心通道的開口，並且中心通道可以由第一橫截表面面積來表徵。配接器可以在第二端處限定從第二通道離開的出口，並且配接器可以在配接器內、在第一端與第二端之間限定中心通道與第二通道之間的過渡部。配接器可以限定過渡部與配接器的第二端之間的第三通道，並且第三通道可在配接器內與中心通道和第二通道流體隔離。
在一些實施例中，第二通道可以由小於第一橫截面積的第二橫截面積來表徵。第二通道可以包括從中心通道延伸的多個通道。配接器可進一步限定提供通向第三通道的通路的埠。系統可進一步包括耦接在配接器與處理腔室之間的隔離器。隔離器可以包括圍繞隔離器通道的環形構件，並且隔離器通道可與第二通道和第三通道流體耦接。在一些實施例中，隔離器可以包括陶瓷材料。系統還可包括耦接在隔離器與處理腔室之間的混合歧管。混合歧管可以由具有的直徑等於隔離器通道的直徑的入口來表徵。在實施例中，混合歧管的入口可過渡到混合歧管的錐形區段。混合歧管的錐形區段可過渡到混合歧管的擴口區段，擴口區段延伸到混合歧管的出口。
本技術還包括半導體處理系統。系統可以包括遠端電漿單元，並且還可包括處理腔室。處理腔室可以包括氣體箱，氣體箱限定中心通道。處理腔室可以包括阻擋板，阻擋板與氣體箱耦接，並且阻擋板可以限定穿過阻擋板的多個孔。處理腔室可以包括面板，面板在面板的第一表面處與氣體箱耦接。處理腔室還可包括離子抑制元件，離子抑制元件在面板的與面板的第一表面相對的第二表面處與面板耦接。
在一些實施例中，系統還可包括加熱器，加熱器圍繞耦接到氣體箱的混合歧管在外部耦接到氣體箱。氣體箱可以從上方限定容積，並且阻擋板可以從側面和下方限定容積。在實施例中，氣體箱、面板和離子抑制元件可直接地耦接在一起。在一些實施例中，面板可以由沿著面板的豎直橫截面的第一直徑和第二直徑來表徵，並且面板可以限定面板的第一表面的內部上的突出部，突出部延伸到由第二直徑表徵的面板的內部區域。阻擋板可以延伸到面板的該內部區域中，並且阻擋板可以由在第二直徑的百分之五以內的直徑來表徵。面板的第一表面和面板的第二表面可以由第一直徑來表徵。在一些實施例中，氣體箱可以沿著氣體箱的與面板接觸的表面限定多個環形溝槽，並且離子抑制元件可以沿著離子抑制元件的與面板接觸的表面限定多個環形溝槽。
本技術還涵蓋通過半導體處理系統來遞送前驅物的方法。方法可以包括在遠端電漿單元中形成含氟前驅物的電漿；方法可以包括使含氟前驅物的電漿流出物流入配接器中。方法可以包括使含氫前驅物流入配接器中，並且配接器可配置為維持通過配接器流體隔離的含氟前驅物和含氫前驅物的電漿流出物。方法還可包括使含氟前驅物和含氫前驅物的電漿流出物流入混合歧管中，混合歧管經配置為混合含氟前驅物和含氫前驅物的電漿流出物。在一些實施例中，方法還可包括使含氟前驅物和含氫前驅物的混合電漿流出物流入處理腔室中。
這種技術可相較常規的系統和技術而提供許多益處。例如，通過直接地耦接腔室部件，可通過腔室提供更均勻的加熱以限制或防止在腔室部件上的顆粒沉積。另外，通過利用在腔室外產生蝕刻劑物質的部件，可相較傳統的系統而更均勻地提供通向基板的混合和遞送。這些和其他實施例以及它們的許多優點和特徵結合以下描述和隨附附圖而更詳細地描述。
本技術包括用於執行半導體製造操作的半導體處理系統、腔室和部件。在半導體製造期間執行的許多幹法蝕刻操作可能涉及多種前驅物。當以各種方式通電和組合時，可將這些蝕刻劑遞送到基板以移除或修改基板的各方面。傳統的處理系統可以多種方式提供前驅物，諸如用於蝕刻。提供增強的前驅物或蝕刻劑的一種方式是在將前驅物遞送通過處理腔室並到達諸如晶圓的基板以進行處理之前通過遠端電漿單元提供所有的前驅物。然而，此製程的一個問題是不同的前驅物可能與不同的材料發生反應，這可能導致遠端電漿單元的損壞。例如，增強的含氟前驅物可以與鋁表面反應，但不會與氧化物表面反應。增強的含氫前驅物可能不與遠端電漿單元內的鋁表面反應，但可能與氧化物塗層反應並移除氧化物塗層。因此，如若兩種前驅物被一起遞送通過遠端電漿單元，則它們可能會損壞單元內的塗層或襯裡。
傳統的處理還可以通過遠端電漿裝置遞送一種前驅物以用於電漿處理，並且可以將第二前驅物直接地遞送到腔室中。然而，此製程的問題是前驅物的混合可能是困難的，並且可能不會在晶圓或基板上提供均勻的蝕刻劑。這可能導致製程不能均勻地在基板的表面上執行，從而可能在繼續圖案化和成形時導致出現裝置問題。
本技術可通過利用配置為使前驅物在它們被遞送到腔室中之前混合的部件和系統來克服這些問題，同時僅通過遠端電漿單元來遞送一種蝕刻劑前驅物，但是多種前驅物也可以流過遠端電漿單元，諸如載氣或其他蝕刻劑前驅物。特定的旁路方案可以在將前驅物遞送到處理腔室之前充分混合前驅物。這可以允許在保護遠端電漿單元的同時執行均勻的製程。本技術的腔室還可以包括使通過腔室的熱導率最大化的部件配置，並且通過以特定方式耦接部件來提高維修的容易性。
儘管其餘的公開內容將常規地識別利用所公開的技術的具體蝕刻製程，但是將容易理解，系統和方法同樣適用於可能在所述腔室中發生的沉積和清潔製程。因此，所述技術不應被認為是如此限於僅單獨與蝕刻製程一起使用。本公開將論述可以與本技術一起使用以執行某些移除操作的一個可能的系統和腔室，然後描述根據本技術的實施例的對此系統的另外的變化和調整。
圖1示出了根據實施例中的具有沉積腔室、蝕刻腔室、烘烤腔室和固化腔室的處理系統100的一個實施例的俯視平面圖。在附圖中，一對前開式聯合晶圓盒（FOUP）102供應多種大小的基板，這些基板是由機器人臂104接收並在放入到基板處理腔室108a-f中的一個中之前放入到低壓保持區域106中，基板處理腔室108a-f定位在串聯區段109a-c中。第二機器人臂110可以用於將基板晶圓從保持區域106傳輸到基板處理區域108a-f並傳輸回。每個基板處理腔室108a-f可經裝配來執行許多基板處理操作，這些基板處理操作除了迴圈層沉積（CLD）、原子層沉積（ALD）、化學氣相沉積（CVD）、物理氣相沉積（PVD）、蝕刻、預先清潔、脫氣、取向和其他基板製程之外，還包括了本文中描述的幹法蝕刻製程。
基板處理腔室108a-f可以包括用於使介電質膜在基板晶圓上沉積、退火、固化和/或蝕刻的一或更多個系統部件。在一個配置中，兩對處理腔室（例如，108c-d和108e-f）可用於將介電質材料沉積在基板上，並且第三對處理腔室（例如，108a-b）可用於蝕刻所沉積的介電質。在另一配置中，所有三對腔室（例如，108a-f）可以經配置為蝕刻基板上的介電質膜。所述製程中的任一種或多種可以在與不同的實施例中示出的製造系統分開的腔室中進行。將瞭解，系統100還設想了具有用於介電質膜的沉積腔室、蝕刻腔室、退火腔室和固化腔室的另外配置。
圖2A示出了具有位於處理腔室內的分隔開的電漿產生區域的示例性製程腔室系統200的剖視圖。在膜蝕刻期間，例如氮化鈦、氮化鉭、鎢、矽、多晶矽、氧化矽、氮化矽、氮氧化矽、碳氧化矽等製程氣體可通過氣體入口組件205流入第一電漿區域215中。遠端電漿系統（RPS）201可視情況包括在系統中，並且可以處理第一氣體，隨後，該第一氣體行進通過氣體入口組件205。入口組件205可包括兩個或更多個不同的氣體供應通道，其中第二通道（未示出）可繞過RPS 201（如若包括的話）。
示出冷卻板203、面板217、離子抑制器223、噴頭225和具有基板255設置在其上的基板支撐件265，並且它們各自可根據實施例而包括在內。底座265可以具有熱交換通道，熱交換流體流過該熱交換通道以控制基板的溫度，該底座可以在處理操作期間被操作以加熱和/或冷卻基板或晶圓。可包括鋁、陶瓷或它們的組合的底座265的晶圓支撐盤也可以使用嵌入式電阻加熱器元件被電阻加熱來實現相對高的溫度，諸如從高達或約100℃至高於或約1100℃的溫度。
面板217可以是角錐形、圓錐形或其他類似的結構，其中窄頂部擴展到寬底部。如圖所示，面板217可另外地是平坦的，並且包括用於分配製程氣體的多個通道。取決於RPS 201的使用的電漿產生氣體和/或電漿激發物質可穿過面板217中的多個孔，如圖2B所示，以更均勻地遞送到第一電漿區域215中。
示例性配置可以包括使氣體入口組件205通向由面板217與第一電漿區域215分隔開的氣體供應區域258，使得氣體/物質通過在面板217中的孔流入第一電漿區域215。結構和操作特徵可被選擇以防止電漿從第一電漿區域215大量地回流到供應區域258、氣體入口組件205和流體供應系統210中。面板217（或腔室的導電頂部）和噴頭225被示出為具有定位在特徵之間的絕緣環220，這允許了AC電勢相對於噴頭225和/或離子抑制器223施加至面板217。可將絕緣環220定位在面板217與噴頭225和/或離子抑制器223之間，從而使得電容耦接電漿（CCP）能夠形成在第一電漿區域中。擋板（未示出）可附加地位於第一電漿區域215中，或以其他方式與氣體入口組件205耦接，以影響流體通過氣體入口組件205進入該區域的流動。
離子抑制器223可以包括板或其他幾何結構，板或其他幾何結構在整個結構上限定了多個孔，這些孔經配置為抑制離子帶電物質遷移出第一電漿區域215，同時允許不帶電荷的中性或自由基物質穿過離子抑制器223進入抑制器與噴頭之間的活化氣體遞送區域。在實施例中，離子抑制器223可以包括具有多種孔配置的多孔板。這些不帶電荷的物質可能包括高反應性的物質，這些物質通過孔與較低反應性的載氣一起運輸。如上所述，離子物質通過孔的遷移可能被減少，並且在一些情況下可能被完全地抑制。控制穿過離子抑制器223的離子物質的量可有利地提供對與下面的晶圓基板接觸的氣體混合物的增加的控制，這進而可增加對氣體混合物的沉積和/或蝕刻特性的控制。例如，氣體混合物的離子濃度的調整可顯著地改變其蝕刻選擇性，例如，SiN x:SiO x蝕刻比率、Si:SiO x蝕刻比率等。在執行沉積的替代實施例中，這也可以使介電質材料的共形到可流動型沉積的平衡偏移。
在離子抑制器223中的多個孔可經配置為控制活化氣體（即，離子型、自由基和/或中性物質）通過離子抑制器223。例如，孔深寬比、或者說是孔直徑與長度的比和/或孔的幾何形狀可控制成使得通過離子抑制器223的活化氣體中的帶離子電荷的物質的流量減少。在離子抑制器223中的孔可以包括面對電漿激發區域215的錐形部分和面對噴頭225的圓柱形部分。可設定圓柱形部分的形狀和尺寸以控制通向噴頭225的離子物質的流量。還可將可調整電偏置施加至離子抑制器223作為控制通過抑制器的離子物質的流量的另外手段。
離子抑制器223可以用來減少或消除從電漿生成區域行進到基板的帶離子電荷的物質的量。不帶電荷的中性和自由基物質仍可穿過在離子抑制器中的開口來與基板反應。應注意，在實施例中可不執行對在基板周圍的反應區域中的離子帶電物質的完全消除。在某些情況下，離子物質旨在到達基板以執行蝕刻和/或沉積製程。在這些情況下，離子抑制器可有助於控制反應區域中的離子物質的濃度處在有助於製程的水準。
與離子抑制器223結合的噴頭225可允許存在於第一電漿區域215中的電漿避免直接激發基板處理區域233中的氣體，同時仍允許激發物質從腔室電漿區域215行進到基板處理區域233中。以這種方式，腔室可以經配置為防止電漿接觸正在被蝕刻的基板255。這可以有利地保護在基板上圖案化的各種複雜的結構和膜，如若與產生的電漿直接接觸，這些結構和膜可能會被損壞、錯位或以其他方式翹曲。另外，當允許電漿接觸基板或接近基板水準時，氧化物物質蝕刻的速率可能提高。因此，如若暴露的材料區域是氧化物，則可通過維持電漿遠離基板而進一步保護此材料。
處理系統可進一步包括與處理腔室電耦接的電源240，以向面板217、離子抑制器223、噴頭225和/或底座265提供電力來在第一電漿區域215或處理區域233中產生電漿。電源可以經配置為根據執行的製程來向腔室遞送可調量的電力。這種配置可允許可調諧的電漿用於正在執行的製程中。與通常具有開或關功能的遠端電漿單元不同，可調諧的電漿可以經配置為向電漿區域215遞送特定量的電力。這進而可以允許形成特定電漿特性，使得前驅物可以特定方式解離來增強由這些前驅物產生的蝕刻輪廓。
電漿可以在噴頭225上方的腔室電漿區域215或噴頭225下方的基板處理區域233中點燃。在實施例中，在基板處理區域233中形成的電漿可以是形成有充當電極的底座的DC偏壓電漿。電漿可存在於腔室電漿區域215中以通過例如含氟前驅物或其他前驅物的流入而產生自由基前驅物。典型地在射頻（RF）範圍內的AC電壓可以施加在處理腔室的導電頂部（例如面板217）與噴頭225和/或離子抑制器223之間以在沉積期間點燃腔室電漿區域215中的電漿。RF電源可以產生13.56MHz的高RF頻率，但也可以單獨或與13.56MHz頻率組合地產生其他頻率。
圖2B示出了影響穿過面板217的處理氣體分配的特徵的詳細圖253。如圖2A和2B所示，面板217、冷卻板203和氣體入口組件205相交以限定氣體供應區域258，製程氣體可從氣體入口205遞送到氣體供應區域258中。氣體可填充氣體供應區域258並通過面板217中的孔259流動到第一電漿區域215中。孔259可以經配置為以基本上單向的方式引導流動，使得製程氣體可流入處理區域233中，但可部分或完全地防止在越過面板217之後回流到氣體供應區域258中。
用於處理腔室區段200中的氣體分配組件（諸如噴頭225）可以稱為雙通道噴頭（DCSH），並另外詳細示出在圖3中所述的實施例中。雙通道噴頭可以提供用於蝕刻製程，從而允許在處理區域233外的蝕刻劑在遞送到處理區域中前分離，以便提供與腔室部件以及彼此的受限相互作用。
噴頭225可以包括上板214和下板216。可將板彼此耦接以在板之間限定容積218。板的耦接可如此來提供穿過上板和下板的第一流體通道219、以及穿過下板216的第二流體通道221。所形成的通道可經配置成僅經由第二流體通道221來提供從容積218穿過下板216的流體進出，並且第一流體通道219可與在板與第二流體通道221之間的容積218流體隔離。容積218可為可供流體穿過氣體分配組件225一側來進出的。
圖3是根據實施例的與處理腔室一起使用的噴頭325的仰視圖。噴頭325可與圖2A中所示的噴頭225對應。示出第一流體通道219的視圖的穿孔365可以具有多個形狀和配置，以便控制和影響穿過噴頭225的前驅物流動。示出第二流體通道221的視圖的小孔375可基本上均勻地分配在噴頭的表面上方，甚至是在穿孔365之間，並且相比於其他配置，可有助於在前驅物離開噴頭時，使前驅物更均勻的混合。
圖4示出了根據本技術的實施例的示例性處理系統400的示意性剖視圖。系統400可以包括圖2中所示的腔室的變型，並且可以包括所述附圖中所示的部件的一些或全部。系統400可以包括處理腔室405和遠端電漿單元410。遠端電漿單元410可以用一或更多個部件與處理腔室405耦接。遠端電漿單元410可以與配接器415、隔離器420或混合歧管425中的一或更多個耦接。混合歧管425可以與處理腔室405的頂部耦接，並且可以與處理腔室405的入口耦接。
配接器415可以在第一端411處與遠端電漿單元410耦接，並且可以在與第一端411相對的第二端412處與隔離器420耦接。穿過配接器415可以限定一或更多個通道。在第一端411處可以限定通向第一通道或中心通道413的開口或埠。中心通道413可以在配接器415內限定在居於中心的位置，並且可以由在垂直於穿過配接器415的中心軸線的方向上的第一橫截表面面積表徵，中心軸線在來自遠端電漿單元410的流動的方向上。中心通道413的直徑可以與遠端電漿單元410的出口埠相等或相同。中心通道413可以由從第一端411到第二端412的長度來表徵。中心通道413可延伸通過配接器415達小於從第一端411到第二端412的長度的長度。例如，中心通道413可以延伸小於從第一端411到第二端412的長度的一半，中心通道413可以延伸從第一端411到第二端412的長度的一半，中心通道413可以延伸超過從第一端411到第二端412的長度的一半，或中心通道413可以延伸從配接器415的第一端411到第二端412的長度的約一半。
中心通道413可延伸到配接器415內的過渡部414。過渡部可包括跨中心通道413的一部分延伸的實心塊，或過渡部414可包括限定通過配接器415的附加的通路的孔口板，或過渡部414可包括至少部分地阻擋通過中心通道413的流動的任何其他物理材料。過渡部414可以提供通向可以從過渡部414延伸到第二端412的一或更多個第二通道416的通路。第二通道416可以由在垂直於穿過配接器415的中心軸線的方向上的第二橫截表面面積來表徵。在實施例中，第二橫截表面面積可以小於第一橫截表面面積。第二通道416可延伸到在第二端412處離開配接器415的出口，並且可提供配接器415的用於通過中心通道413從遠端電漿單元410遞送到配接器415中的前驅物（諸如電漿流出物）的出口。
第二通道416可以包括在通過配接器415的流動方向上圍繞中心軸線限定的環形或半環形通道。第二通道416還可包括圍繞穿過配接器415的在流動方向上的中心軸線徑向地限定的多個通道，該通道提供來自中心通道413的流體通路並從中心通道413延伸到第二端412。過渡部414可限定圍繞過渡部414的外部的多個孔口，並且可以由具有實心內部區域的孔口板和圍繞外部區域限定的一或更多個孔口來表徵。孔口可以是具有月牙形或半環形形狀的單個孔口，或具有圓形、卵形或其他幾何形狀並提供通向第二通道416的通路的多個孔口。在實施例中，過渡部414的孔口可以由等於第二通道416的半徑的半徑來表徵。
配接器415還可以限定第三通道418，第三通道可以位於過渡部414與第二端412之間。第三通道418還可以在第二端412處提供出口，但是出口可以用於從遠端電漿單元410交替遞送的單獨的前驅物。例如，可從沿著配接器415的外表面（諸如側面）限定的埠417流體地進出第三通道418，這可繞過遠端電漿單元410。埠417可沿著配接器415的長度而處在過渡部414處或其下方。第三通道418可通過配接器415遞送前驅物並從第二端412遞送出。第三通道418可以被限定在配接器415的在過渡部414與第二端412之間的區域中。在實施例中，第三通道418可能無法從中心通道413、過渡部414或第二通道416進出。第三通道418可以經配置為維持前驅物與從遠端電漿單元410遞送到中心通道413中的電漿流出物流體隔離。前驅物可不接觸電漿流出物，直到通過第二端412離開配接器415。第三通道418可以包括配接器415中限定的一或更多個通道。第三通道418可以位於配接器415內的中心位置處，並且可以與第二通道416相關聯。例如，在實施例中，第二通道416可以圍繞第三通道418同心地對準。第二通道416也可以設置在第三通道418附近。配接器415還可限定一或更多個孔419，該一或更多個孔可以允許配接器與隔離器420耦接或通過隔離器420耦接。
在實施例中，隔離器420可以與配接器415的第二端412耦接。隔離器420可以是或包括圍繞隔離器通道421的環形構件。隔離器通道421可以在通過配接器415的流動方向上與中心軸線軸向地對準。隔離器通道421可以由在垂直於通過隔離器420的流動方向的方向上的第三橫截表面面積來表徵。第三橫截面積可以等於、大於或小於中心通道413的第一橫截面積。在實施例中，隔離器通道421可以由大於、等於通過配接器415的中心通道413的直徑或與之大致相同的直徑來表徵。隔離器通道421可提供來自第二通道416的流體通路並還可提供來自第三通道418的流體通路。在實施例中，隔離器通道421可以為從遠端電漿單元410遞送的電漿流出物和遞送到埠417並通過第三通道418的附加的前驅物提供第一混合區域。隔離器420還可以限定一或更多個通道422，該一或更多個通道可以允許耦接到隔離器420或通過隔離器420與配接器415和/或混合歧管425耦接。通道422可以與上述的孔419軸向地對準，這些孔可一起提供諸如螺栓孔的耦接點，例如，部件可通過此等偶接點而固定。
隔離器420可以由與配接器415、混合歧管425或任何其他腔室部件相似或不同的材料製成。在一些實施例中，儘管配接器415和混合歧管425可由鋁製成或包括鋁，包括鋁的氧化物、在一或更多個表面上的經處理的鋁、或一些其他材料，但是隔離器420也可以是或包括熱導率比其他腔室部件低的材料。在一些實施例中，隔離器420可以是或包括經配置為在遠端電漿單元410與腔室405之間提供熱中斷的陶瓷、塑膠或其他隔熱部件。在操作期間，遠端電漿單元410可以被冷卻或在相對於腔室405較低的溫度下操作，而腔室405可被加熱或在相對於遠端電漿單元410較高的溫度下操作。提供陶瓷或隔熱隔離器420可防止或限制部件之間的熱、電或其他干擾。
混合歧管425可以在第一端423處與隔離器420耦接，並且可以在第二端424處與腔室405耦接。混合歧管425可以在第一端423處限定入口427。入口427可以提供來自隔離器通道421的流體通路，並且入口427可以由與隔離器通道421的直徑相等或大致相同的直徑來表徵。入口427可通過混合歧管425來限定通道426的一部分，並且通道426可由限定穿過通道426的輪廓的一或更多個區段組成。入口427可以是在通過混合歧管425的通道426的流動方向上的第一區段。入口427可以由可小於在混合歧管425的流動方向上的長度的一半的長度來表徵。在實施例中，入口427的長度也可以小於混合歧管425的長度的三分之一，並可以小於混合歧管425的長度的四分之一。
入口427可延伸到通道426的第二區段，第二區段可以是或可以包括錐形區段428。錐形區段428可以從等於或類似於入口427的直徑的第一直徑延伸到小於第一直徑的第二直徑。在一些實施例中，第二直徑可以是約或小於第一直徑的一半。在實施例中，錐形區段428可以由大於或約10%、大於或約20%、大於或約30%、大於或約40%、大於或約50%、大於或約60%、大於或約70%、大於或約80%、大於或約90%、大於或約100%、大於或約150%、大於或約200%、大於或約300%或更大的錐形角度來表徵。
錐形區段428可過渡到通道426的第三區域，第三區域可以是擴口區段429。擴口區段429可以從錐形區段428延伸到混合歧管425在第二端424處的出口。擴口區段429可以從等於錐形區段428的第二直徑的第一直徑延伸到大於第一直徑的第二直徑。在一些實施例中，第二直徑可以是約或大於第一直徑的兩倍。在實施例中，擴口區段429可以由大於或約10%、大於或約20%、大於或約30%、大於或約40%、大於或約50%、大於或大於約60%、大於或約70%、大於或約80%、大於或約90%、大於或約100%、大於或約150%、大於或約200%、大於或約300%或更大的擴口角度來表徵。
擴口區段429可以提供經由出口431通過第二端424被遞送通過混合歧管425的前驅物的出口。通過混合歧管425的通道426區段可以經配置為提供遞送到混合歧管的前驅物的充分或徹底的混合，然後將混合的前驅物提供到腔室405中。與常規的技術不同，通過在遞送到腔室之前執行蝕刻劑或前驅物混合，本系統可以在分配在腔室和基板周圍之前提供具有均勻性質的蝕刻劑。以這種方式，用本技術執行的製程可以在基板表面上具有更均勻的結果。
混合歧管425還可限定凹槽433，凹槽433可以允許配接器415、隔離器420和混合歧管425耦接。凹槽433可以與通道422和孔419軸向地對準，這可以允許用螺栓、緊固件或任何其他螺紋或非螺紋部件耦接三個部件，螺栓、緊固件或任何其他螺紋或非螺紋部件能夠向三個部件提供壓縮力以使之與位於配接器415和混合歧管425中限定的通道內的、在隔離器420的任一側上的O形環或彈性體構件固定在一起。
腔室405可以包括呈堆疊佈置的多個部件。腔室堆疊可以包括氣體箱450、阻擋板460、面板470、離子抑制元件480和蓋間隔件490。部件可用於將前驅物或一組前驅物分配通過腔室以使蝕刻劑或其他前驅物均勻地遞送到基板以進行處理。
氣體箱450可以限定腔室入口452。中心通道454可被限定為穿過氣體箱450以將前驅物遞送到腔室405中。入口452可與混合歧管425的出口431對準。在實施例中，入口452和/或中心通道454可以由類似直徑來表徵。中心通道454可以延伸穿過氣體箱450並且經配置為將一或更多種前驅物遞送到由氣體箱450從上方限定的容積457中。氣體箱450可以包括第一表面453（諸如，頂表面）和與第一表面453相對的第二表面455，諸如氣體箱450的底表面。在實施例中，頂表面453可以是平面的或實質上平面的表面。與頂表面453耦接的可以是加熱器448。
在實施例中，加熱器448可以經配置為加熱腔室405，並且可以傳導方式加熱每個蓋堆疊部件。加熱器448可以是任何種類的加熱器，包括流體加熱器、電加熱器、微波加熱器或被配置成將熱量以傳導方式遞送到腔室405的其他裝置。在一些實施例中，加熱器448可以是或包括形成為圍繞氣體箱450的第一表面453的環形圖案的電加熱器。加熱器可跨氣體箱450並圍繞混合歧管425而限定。加熱器可以是板式加熱器或電阻元件加熱器，可經配置為提供高達、約或大於約2,000 W的熱量，並且可經配置為提供大於或約2,500W、大於或約3,000W、大於或約3,500W、大於或約4,000W、大於或約4,500W、大於或約5,000 W或更多熱量。
在實施例中，加熱器448可經配置為產生可變腔室部件溫度，該可變腔室部件溫度可高達、約或大於約50℃，並且可經配置為產生大於或約75℃、大於或約100℃、大於或約150℃、大於或約200℃、大於或約250℃、大於或約300℃或更高的腔室部件溫度。加熱器448可經配置為將諸如離子抑制元件480的個別部件升高到這些溫度中的任一者以促進諸如退火的處理操作。在一些處理操作中，基板可朝向離子抑制元件480升高以進行退火操作，並且加熱器448可進行調節以將加熱器的溫度以傳導方式升高到上文所述的任何特定溫度，或處在表述溫度中的任一者內或它們之間的任何溫度範圍內。
氣體箱450的第二表面455可以限定氣體箱的輪廓，包括從唇緣458延伸到下降部分459的凹入的突出部456，凹入的突出部可以限定氣體箱450的厚度。下降部分459可以是氣體箱450從上方限定容積457的部分。氣體箱450還可以限定多個凹槽461，該凹槽可以允許阻擋板460與氣體箱450耦接。阻擋板460可以由等於或類似下降部分459的直徑的直徑來表徵。阻擋板460可以限定穿過阻擋板460的多個孔463，這些孔可以允許從容積457分配諸如蝕刻劑的前驅物，並且可以開始通過腔室405分配前驅物以均勻地遞送到基板。阻擋板460可以由在阻擋板460的外徑處的凸起的環形區段465來表徵。凸起的環形區段465可以為阻擋板460提供結構剛性，並且在實施例中，可以限定容積457的側面。阻擋板460也可以從下方限定容積457的底部。容積457可允許前驅物在穿過阻擋板460的孔463之前從氣體箱450的中心通道454分配。阻擋板460還可以限定多個孔467，這些孔可以與氣體箱450的凹槽461軸向地對準。螺栓或其他螺紋或非螺紋耦接裝置可以從阻擋板460的下側用來將阻擋板460耦接到下降部分459或氣體箱450的底部側。
面板470可以包括第一表面472和與第一表面472相對的第二表面474。面板470可在第一表面472處與氣體箱450耦接，第一表面472可接合氣體箱450的唇緣458。面板470可以限定在第一表面472的內部處延伸到在面板470內限定的內部區域477的突出部473。面板470可以由沿著面板470的豎直橫截面的第一直徑和小於第一直徑的第二直徑來表徵。第一直徑可以是第一表面472和第二表面474的外徑，並且第二直徑可以是第一表面472與第二表面474之間的內部區域（例如中間區域475，如圖所示）的內徑。面板470的外部輪廓可以包括圍繞面板470的C形外部輪廓。
如圖所示，阻擋板460和氣體箱450可延伸到面板470的內部區域477中或定位在面板470的內部區域477內。阻擋板460的外徑可以在面板470的內部區域477的內徑的10%或更小內，並且可以小於或約8%、小於或約6%、小於或約5%、小於或約4%、小於或約3%、小於或約2%、小於或約1%、小於或約0.5%、小於或約0.1%或更小。通過維持氣體箱450的下降部分459與面板470的內部區域477之間的有限的間距或距離，可以使顆粒積聚最小化，這可以減少清潔和更換時間，並減少在處理期間的污染物分佈。面板470可以限定穿過面板的多個通道476，諸如之前關於腔室200所述。示出了通道476的樣本，但是在實施例中，可以包括比所示的更多此類通道。
離子抑制元件480可以靠近面板470的第二表面474定位，並且可以在第二表面474處與面板470耦接。離子抑制元件480可類似於上述的離子抑制器223，並且可以經配置為減少離子遷移到容納基板的腔室405的處理區域中。在實施例中，氣體箱450、面板470和離子抑制元件480可耦接在一起，並且在實施例中，可直接地耦接在一起。通過直接地耦接部件，由加熱器448產生的熱量可傳導通過這些部件以維持特定腔室溫度，所示腔室溫度可在部件之間維持較少的變化。離子抑制元件480還可接觸蓋分隔件490，它們可一起至少部分地限定在處理期間維持基板的電漿處理區域。
轉至圖5A，其示出了根據本技術的實施例的阻擋板460的示意性透視圖。如圖所示，阻擋板460包括凸起的環形區段465，多個孔467穿過凸起的環形區段465而限定。阻擋板460可以通過經由這些孔耦接而與氣體箱450耦接。通過利用沿著外部區域耦接，阻擋板460可以維持均勻的中心輪廓，這不同於可通過中心凸台耦接到部件的許多常規的板。中心耦接可能影響通過阻擋板460的流動輪廓，這可能限制或影響通過處理腔室的分配的均勻性。孔463可被限定為穿過阻擋板460的中心區域，並且可均勻地分配在阻擋板460上。孔463可以是均勻的大小的，或可基於它們的位置而具有不同的大小。
圖5B示出了根據本技術的實施例的穿過阻擋板500的示意性流動輪廓。如圖所示，阻擋板500不包括用於耦接阻擋板的任何中心凸台或孔，並且因此穿過阻擋板500的流動輪廓在整個表面上的各個不同的半徑測量處是均勻的。與中心區域在流動輪廓上的差異的原因可能是如前所述的前驅物從氣體箱的中心遞送，這可能會在跨板並通過孔進行側向分配之前進行聚集。通過移除任何在中心的流動障礙，前驅物的均勻分配可通過阻擋板460而朝向處理區域和基板遞送。
圖6示出了根據本技術的實施例的示例性處理腔室的示意性部分剖視圖。該附圖可包括圖4的部分特寫視圖。如圖所示，該附圖包括了氣體箱450、阻擋板460、面板470、離子抑制元件480和蓋分隔件490。圖6示出了腔室部件的附加的耦接件方面，包括在部件之間提供密封能力的O形環或彈性體元件。如圖所示，氣體箱450限定氣體箱450中限定的多個溝槽605a、605b。溝槽605可以是圍繞氣體箱450限定的環形溝槽。彈性體元件可定位在溝槽內以提供氣體箱450與面板470之間的密封。儘管示出了兩個溝槽605，但應理解，氣體箱450內可包括任何數量的溝槽。
離子抑制元件480還沿著與面板470接觸的表面限定了多個溝槽610a、610b。溝槽610可以是與以上針對氣體箱450論述的類似的環形溝槽。在實施例中，溝槽605和溝槽610可豎直地對準，並且可以與穿過部件併入的螺栓或其他耦接元件相關聯以提供連接。離子抑制元件480還可以在與蓋分隔件490接觸的第二表面上限定多個溝槽615a、615b。
圖7示出了根據本技術的實施例的將前驅物遞送通過處理腔室的方法700的操作。方法700可以在腔室200或腔室400中執行，並且可以允許在腔室外部的改善的前驅物混合，同時保護部件免受蝕刻劑損傷。儘管腔室的部件可能暴露於隨時間而可能引起磨損的蝕刻劑，但是本技術可將這些部件限制為可更容易替換和維修的彼等部件。例如，本技術可限制遠端電漿單元的內部部件的暴露，這可允許將特定保護應用於遠端電漿單元。
方法700可以包括在操作705中形成含氟前驅物的遠程電漿。可以將前驅物遞送到遠端電漿單元以解離而產生電漿流出物。在實施例中，遠端電漿單元可塗覆或襯有可承受與含氟流出物接觸的氧化物或其他材料。在實施例中，除了載氣之外，不能通過遠端電漿單元遞送其他蝕刻劑前驅物，這可保護單元免受損壞。配置為產生不同的蝕刻劑的電漿流出物的其他實施例可以襯有可能對該前驅物為惰性的不同的材料。
在操作710處，含氟前驅物的電漿流出物可流入與遠端電漿單元耦接的配接器。在操作715，可使含氫前驅物流入配接器中。配接器可經配置為維持通過配接器流體隔離的含氟前驅物和含氫前驅物的電漿流出物。在操作720處，可使含氟前驅物和含氫前驅物的電漿流出物流入混合歧管中，混合歧管經配置為混合含氟前驅物和含氫前驅物的電漿流出物，然後將產生的混合前驅物或蝕刻劑遞送到半導體處理腔室中。如前所述，可使用在其他地方描述的附加的部件來控制蝕刻劑的遞送和分配。將理解，標識的前驅物僅是用於在該腔室中使用的合適的前驅物的實例。整個公開內容論述的腔室和材料可以用於任何數量的其他處理操作，這些處理操作可受益於分離前驅物並在將其遞送到處理腔室中之前將它們混合。
在先前描述中，出於解釋目的，已闡述了許多細節，以便提供對本技術的各種實施例的理解。然而，本領域的技術人員應清楚，某些實施例可以在沒有這些細節中的一些或有另外的細節的情況下實踐。
在已經公開若干實施例的情況下，本領域的技術人員將認識到，在不背離實施例的精神的情況下，可以使用各種修改、替代配置和等效物。另外，尚未描述許多熟知的製程和元件，以避免不必要地模糊本技術。因此，以上描述不應視為限制本技術的範圍。
在提供值的範圍情況下，將理解，還確切地公開在該範圍的上限與下限之間的每一個居間值，至下限單位的最小分數，除非在上下文另外清楚指明。涵蓋在該表述範圍中的任何表述值或未表述的居間值與該表述範圍中的任何其他表述值或居間值之間的任何更窄的範圍。那些更小的範圍的上限和下限可獨立地包括或排除於該範圍，並且其中在更小的範圍中包括任一限值、不包括限值或包括兩個限值的每個範圍也涵蓋在本技術內，根據表述範圍中的任何特定地排除的限值而定。在表述範圍包括這些限值中的一或兩個情況下，還包括排除那些所包括的限值中的任一個或兩個的範圍。
如本文和隨附的申請專利範圍所用，除非在上下文另外清楚指出，否則單數形式「一個」、「一種」和「該」包括複數指稱。因此，例如，提及「層」包括多個這種層，並且提及「前驅物」包括指本領域的技術人員已知的一或更多種前驅物及其等效物，諸如此類。
另外，詞語「包括」、「包含」和「含有」在本說明書和隨附的申請專利範圍中使用時，意圖表示存在表述的特徵、整體、部件或操作，但它們不排除一或更多個其他特徵、整體、部件、操作、動作或群組的存在或添加。
100:處理系統 102:前開式聯合晶圓盒（FOUP） 104:機器人臂 106:低壓保持區域 108a~108f:基板處理腔室 109a~109c:串聯區段 110:第二機器人臂 200:製程腔室系統/處理腔室區段 201:遠端電漿系統（RPS） 203:冷卻板 205:氣體入口組件 210:流體供應系統 214:上板 215:第一電漿區域 216:下板 217:面板 218:容積 219:第一流體通道 220:絕緣環 221:第二流體通道 223:離子抑制器 225:噴頭 233:基板處理區域 240:電源 253:詳細圖 255:基板支撐件 258:氣體供應區域 259:孔 265:基板 325:噴頭 365:穿孔 375:小孔 400:系統 405:處理腔室 410:遠端電漿單元 411:第一端 412:第二端 413:中心通道 414:過渡部 415:配接器 416:第二通道 417:埠 418:第三通道 419:孔 421:隔離器通道 422:通道 423:第一端 424:第二端 425:歧管 426:通道 427:入口 428:錐形區段 429:擴口區段 431:出口 433:凹槽 448:加熱器 450:氣體箱 452:腔室入口 453:第一表面 454:中心通道 455:第二表面 457:容積 456:突出部 458:唇緣 459:下降部分 460:阻擋板 461:凹槽 463:孔 465:凸起的環形區段 467:孔 470:面板 472:第一表面 473:突出部 474:第二表面 475:中間區域 476:通道 477:內部區域 480:離子抑制元件 490:蓋分隔件 500:阻擋板 605:溝槽 605a:溝槽 605b:溝槽 610:溝槽 610a:溝槽 610b:溝槽 615a:溝槽 615b:溝槽 700:方法 705~720:操作
對所公開的技術的本質和優點的進一步理解可參考本說明書其餘部分和附圖來實現。
圖1示出了根據本技術的實施例的示例性處理系統的俯視平面圖。
圖2A示出了根據本技術的實施例的示例性處理腔室的示意性剖視圖。
圖2B示出了根據本技術的實施例的示例性噴頭的詳細圖。
圖3示出了根據本技術的實施例的示例性噴頭的仰視平面圖。
圖4示出了根據本技術的實施例的示例性處理系統的示意性剖視圖。
圖5A示出了根據本技術的實施例的阻擋板的示意性透視圖。
圖5B示出了根據本技術的實施例的穿過阻擋板的示意性流動輪廓。
圖6示出了根據本技術的實施例的示例性處理腔室的示意性部分剖視圖。
圖7示出了根據本技術的實施例的將前驅物遞送通過處理腔室的方法的操作。
包括數個附圖而作為示意圖。將理解，附圖是出於說明目的的，並且除非明確表明為按比例繪製，否則不考慮為按比例繪製。另外，作為示意圖提供的附圖用來幫助進行理解，並且與實際表示相比而可能沒有包括所有的方面或資訊，並出於說明目的而可能包括誇大材料。
在附圖中，類似的部件和/或特徵可以具有相同附圖標記。另外，相同類型的各種部件可通過在附圖標記之後加上用於區分類似部件的字母來區分。如若本說明書中僅使用第一附圖標記，則不管字母如何，描述都適用於具有相同第一附圖標記的類似部件中的任一者。
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無
400:系統
405:處理腔室
410:遠端電漿單元
411:第一端
412:第二端
413:中心通道
414:過渡部
415:配接器
416:第二通道
417:埠
418:第三通道
419:孔
421:隔離器通道
422:通道
423:第一端
424:第二端
425:歧管
426:通道
427:入口
428:錐形區段
429:擴口區段
431:出口
433:凹槽
448:加熱器
450:氣體箱
452:腔室入口
453:第一表面
454:中心通道
455:第二表面
457:容積
456:突出部
458:唇緣
459:下降部分
460:阻擋板
461:凹槽
463:孔
465:凸起的環形區段
467:孔
470:面板
472:第一表面
473:突出部
474:第二表面
475:中間區域
476:通道
477:內部區域
480:離子抑制元件
490:蓋分隔件

Claims (18)

  1. 一種半導體處理系統配接器，包括：一配接器主體，該配接器主體包括一第一端和與該第一端相對的一第二端，其中：該配接器主體在該第一端處限定通向一中心通道的一開口；該中心通道之特徵在於一第一橫截表面面積；該配接器主體在該第二端處限定從一第二通道離開的一出口，其中該第二通道之特徵在於小於該第一橫截面積的一第二橫截面積；該配接器主體在該第一端與該第二端之間在該配接器主體內限定該中心通道與該第二通道之間的一過渡部；該配接器主體限定該過渡部與該配接器的該第二端之間的一第三通道；及該第三通道與該配接器主體內的該中心通道和該第二通道流體隔離。
  2. 如請求項1所述的半導體處理系統配接器，其中：該第二通道包括從該中心通道延伸的複數個通道。
  3. 如請求項2所述的半導體處理系統配接器，其中： 在穿過該配接器的一流動方向上徑向地圍繞該配接器主體的一中心軸線來限定該複數個通道。
  4. 如請求項2所述的半導體處理系統配接器，其中：該複數個通道之每一者包括在穿過該配接器的一流動方向上圍繞該配接器主體的一中心軸線限定的一環形或半環形通道。
  5. 如請求項2所述的半導體處理系統配接器，其中：該複數個通道圍繞該第三通道同心地對準。
  6. 如請求項1所述的半導體處理系統配接器，其中：該配接器主體進一步限定提供通向該第三通道的通路的一埠。
  7. 如請求項6所述的半導體處理系統配接器，其中：該埠沿著該配接器主體的一長度處在該過渡部處或該過渡部下方。
  8. 如請求項6所述的半導體處理系統，其中：在該配接器主體的一側中限定該埠。
  9. 如請求項1所述的半導體處理系統，其中：該過渡部限定圍繞該過渡部的一外部的一或更多個 孔口。
  10. 如請求項1所述的半導體處理系統，其中：該過渡部之特徵在於具有一實心內部區域的一孔口板和圍繞一外部區域限定的該一或更多個孔口。
  11. 如請求項10所述的半導體處理系統，其中：該過渡部的該一或更多個孔口之每一者之特徵在於一半徑，該半徑等於該第二通道的一半徑。
  12. 一種半導體處理系統配接器，包括：一配接器主體，該配接器主體之特徵在於一第一端和與該第一端相對的一第二端，其中：該配接器主體在該第一端處限定通向一中心通道的一開口；該中心通道之特徵在於一直徑；該配接器主體在該第二端處限定從一第二通道離開的一出口，其中該第二通道之特徵在於小於該中心通道的一橫截面積的一橫截面積；該配接器主體在該第一端與該第二端之間在該配接器主體內限定該中心通道與該第二通道之間的一過渡部；該配接器主體限定該過渡部與該配接器主體的該第二端之間的一第三通道；該第二通道在圓周上圍繞該第三通道延伸； 該第三通道與該配接器主體內的該中心通道和該第二通道流體隔離；及該配接器主體進一步限定提供通向該第三通道的通路的一埠。
  13. 如請求項12所述的半導體處理系統，其中：該第三通道延伸穿過該第二端。
  14. 如請求項12所述的半導體處理系統，其中：該第三通道包括在該配接器主體中限定的多個通道。
  15. 如請求項12所述的半導體處理系統，其中：該配接器主體包括從由鋁、氧化鋁、及經處理的鋁所組成的群組中選出的一或更多個材料。
  16. 如請求項12所述的半導體處理系統，其中：該中心通道延伸穿過該配接器主體至該埠所在處的一深度。
  17. 如請求項12所述的半導體處理系統，其中：該中心通道延伸穿過小於一半的從該第一端到該第二端的一長度。
  18. 如請求項12所述的半導體處理系統，其中：該過渡部限定圍繞該過渡部的一外部的複數個孔口。
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