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WO2009041400A1 - ネガ型レジスト組成物及びそれを用いたレジストパターン形成方法 - Google Patents

ネガ型レジスト組成物及びそれを用いたレジストパターン形成方法 Download PDF

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Publication number
WO2009041400A1
WO2009041400A1 PCT/JP2008/067122 JP2008067122W WO2009041400A1 WO 2009041400 A1 WO2009041400 A1 WO 2009041400A1 JP 2008067122 W JP2008067122 W JP 2008067122W WO 2009041400 A1 WO2009041400 A1 WO 2009041400A1
Authority
WO
WIPO (PCT)
Prior art keywords
resist composition
negative resist
forming method
pattern
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/067122
Other languages
English (en)
French (fr)
Inventor
Wataru Hoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to US12/679,974 priority Critical patent/US20100203445A1/en
Publication of WO2009041400A1 publication Critical patent/WO2009041400A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1811—C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1812—C12-(meth)acrylate, e.g. lauryl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F230/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
    • C08F230/04—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
    • C08F230/08—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
    • C08F230/085—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon the monomer being a polymerisable silane, e.g. (meth)acryloyloxy trialkoxy silanes or vinyl trialkoxysilanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • C08F220/24—Esters containing halogen containing perhaloalkyl radicals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

　本発明の目的は、遠紫外線光、特に波長が１９３ｎｍのＡｒＦエキシマレーザを用いるミクロフォトファブリケーションの性能向上技術の課題を解決することであり、より具体的には、微細なパターン形成においてもパターン倒れが発生し難く、良好な解像性を示すネガ型レジスト組成物及びそれを用いたレジストパターン形成方法として、（Ａ）アルカリ可溶性樹脂、（Ｂ）分子量２０００以下のオキセタン構造を有する低分子化合物を有する化合物、（Ｃ）光カチオン重合開始剤、を含有することを特徴とする、ネガ型レジスト組成物及びそれを用いたレジストパターン形成方法を提供する。
PCT/JP2008/067122 2007-09-26 2008-09-22 ネガ型レジスト組成物及びそれを用いたレジストパターン形成方法 Ceased WO2009041400A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/679,974 US20100203445A1 (en) 2007-09-26 2008-09-22 Negative resist composition and resist pattern forming method using the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-250035 2007-09-26
JP2007250035 2007-09-26
JP2008074734 2008-03-21
JP2008-074734 2008-03-21

Publications (1)

Publication Number Publication Date
WO2009041400A1 true WO2009041400A1 (ja) 2009-04-02

Family

ID=40511285

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067122 Ceased WO2009041400A1 (ja) 2007-09-26 2008-09-22 ネガ型レジスト組成物及びそれを用いたレジストパターン形成方法

Country Status (4)

Country Link
US (1) US20100203445A1 (ja)
JP (1) JP2009258603A (ja)
TW (1) TW200928584A (ja)
WO (1) WO2009041400A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011053248A (ja) * 2009-08-31 2011-03-17 Fujifilm Corp 感光性樹脂組成物、硬化膜、硬化膜の形成方法、有機ｅｌ表示装置、及び、液晶表示装置
JP2011059531A (ja) * 2009-09-11 2011-03-24 Jsr Corp 感放射線性樹脂組成物及びパターン形成方法
WO2011043481A1 (en) * 2009-10-06 2011-04-14 Fujifilm Corporation Pattern forming method, chemical amplification resist composition and resist film

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5432456B2 (ja) * 2008-01-23 2014-03-05 出光興産株式会社 アダマンタン系共重合樹脂、樹脂組成物及びその用途
KR20110019979A (ko) * 2009-08-21 2011-03-02 동우 화인켐 주식회사 착색 감광성 수지 조성물, 이를 이용하여 제조된 컬러필터 및 액정표시장치
JP5505066B2 (ja) * 2010-04-28 2014-05-28 Ｊｓｒ株式会社 感放射線性樹脂組成物、表示素子の層間絶縁膜、保護膜及びスペーサーならびにそれらの形成方法
JP6451599B2 (ja) 2015-11-10 2019-01-16 信越化学工業株式会社 重合性単量体、高分子化合物、レジスト材料、及びパターン形成方法
EP3683605B1 (en) 2017-09-15 2022-07-06 FUJIFILM Corporation Composition, film, laminate, infrared transmission filter, solid-state imaging device and infrared sensor
KR102420769B1 (ko) 2018-09-20 2022-07-14 후지필름 가부시키가이샤 경화성 조성물, 경화막, 적외선 투과 필터, 적층체, 고체 촬상 소자, 센서, 및 패턴 형성 방법
EP3992254B1 (en) 2019-06-27 2024-02-21 FUJIFILM Corporation Composition, film, and optical sensor
EP4130147A4 (en) 2020-03-30 2023-08-09 FUJIFILM Corporation COMPOSITION, FILM AND OPTICAL SENSOR
JPWO2023054142A1 (ja) 2021-09-29 2023-04-06

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001343748A (ja) * 2000-03-28 2001-12-14 Fujitsu Ltd ネガ型レジスト組成物、レジストパターンの形成方法及び半導体装置の製造方法
JP2002341537A (ja) * 2001-05-21 2002-11-27 Jsr Corp めっき造形物製造用ネガ型感放射線性樹脂組成物およびめっき造形物の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000001684A1 (en) * 1998-07-03 2000-01-13 Nec Corporation (meth)acrylate derivatives bearing lactone structure, polymers, photoresist compositions and process of forming patterns with the same
US20010036594A1 (en) * 2000-03-28 2001-11-01 Fujitsu Limited Resist composition for use in chemical amplification and method for forming a resist pattern thereof
US7122288B2 (en) * 2000-03-28 2006-10-17 Fujitsu Limited Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device
JP4790153B2 (ja) * 2000-09-01 2011-10-12 富士通株式会社 ネガ型レジスト組成物、レジストパターンの形成方法及び電子デバイスの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001343748A (ja) * 2000-03-28 2001-12-14 Fujitsu Ltd ネガ型レジスト組成物、レジストパターンの形成方法及び半導体装置の製造方法
JP2002341537A (ja) * 2001-05-21 2002-11-27 Jsr Corp めっき造形物製造用ネガ型感放射線性樹脂組成物およびめっき造形物の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011053248A (ja) * 2009-08-31 2011-03-17 Fujifilm Corp 感光性樹脂組成物、硬化膜、硬化膜の形成方法、有機ｅｌ表示装置、及び、液晶表示装置
JP2011059531A (ja) * 2009-09-11 2011-03-24 Jsr Corp 感放射線性樹脂組成物及びパターン形成方法
WO2011043481A1 (en) * 2009-10-06 2011-04-14 Fujifilm Corporation Pattern forming method, chemical amplification resist composition and resist film
JP2011100089A (ja) * 2009-10-06 2011-05-19 Fujifilm Corp パターン形成方法、化学増幅型レジスト組成物及びレジスト膜
US8999621B2 (en) 2009-10-06 2015-04-07 Fujifilm Corporation Pattern forming method, chemical amplification resist composition and resist film

Also Published As

Publication number Publication date
TW200928584A (en) 2009-07-01
US20100203445A1 (en) 2010-08-12
JP2009258603A (ja) 2009-11-05

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