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WO2009008446A1 - レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 - Google Patents

レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 Download PDF

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Publication number
WO2009008446A1
WO2009008446A1 PCT/JP2008/062399 JP2008062399W WO2009008446A1 WO 2009008446 A1 WO2009008446 A1 WO 2009008446A1 JP 2008062399 W JP2008062399 W JP 2008062399W WO 2009008446 A1 WO2009008446 A1 WO 2009008446A1
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WO
WIPO (PCT)
Prior art keywords
composition
underlayer film
film forming
resist underlayer
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/062399
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English (en)
French (fr)
Inventor
Rikimaru Sakamoto
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Nissan Chemical Corp
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Nissan Chemical Corp
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Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Priority to JP2009522657A priority Critical patent/JP5158381B2/ja
Publication of WO2009008446A1 publication Critical patent/WO2009008446A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/02—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds
    • C08G63/12—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds derived from polycarboxylic acids and polyhydroxy compounds
    • C08G63/16—Dicarboxylic acids and dihydroxy compounds
    • C08G63/20—Polyesters having been prepared in the presence of compounds having one reactive group or more than two reactive groups
    • C08G63/21—Polyesters having been prepared in the presence of compounds having one reactive group or more than two reactive groups in the presence of unsaturated monocarboxylic acids or unsaturated monohydric alcohols or reactive derivatives thereof

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Architecture (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Structural Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Epoxy Resins (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

【課題】 　ドライエッチング速度の選択比が大きく、しかもＡｒＦエキシマレーザー（波長１９３ｎｍ）のような短波長でのｋ値及び屈折率ｎが所望の値を示すレジスト下層膜を形成するための組成物を得ることを目的とする。 【解決手段】 　ポリマー及び溶剤を含み、前記ポリマーの主鎖はけい皮酸誘導体を有するリソグラフィー用レジスト下層膜形成組成物である。前記けい皮酸誘導体はエステル結合、またはエステル結合とエーテル結合を介して前記ポリマーの主鎖に導入されている。
PCT/JP2008/062399 2007-07-11 2008-07-09 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 Ceased WO2009008446A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009522657A JP5158381B2 (ja) 2007-07-11 2008-07-09 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-182140 2007-07-11
JP2007182140 2007-07-11
JP2007-220317 2007-08-27
JP2007220317 2007-08-27

Publications (1)

Publication Number Publication Date
WO2009008446A1 true WO2009008446A1 (ja) 2009-01-15

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ID=40228617

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062399 Ceased WO2009008446A1 (ja) 2007-07-11 2008-07-09 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法

Country Status (3)

Country Link
JP (1) JP5158381B2 (ja)
TW (1) TWI432905B (ja)
WO (1) WO2009008446A1 (ja)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010181453A (ja) * 2009-02-03 2010-08-19 Nissan Chem Ind Ltd レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
US20110230058A1 (en) * 2008-11-27 2011-09-22 Nissan Chemical Industries, Ltd. Composition for forming resist underlayer film with reduced outgassing
WO2015019961A1 (ja) * 2013-08-08 2015-02-12 日産化学工業株式会社 窒素含有環化合物を含むポリマーを含むレジスト下層膜形成組成物
KR20170070017A (ko) 2014-10-21 2017-06-21 닛산 가가쿠 고교 가부시키 가이샤 레지스트 하층막 형성 조성물
KR20170134380A (ko) 2015-04-03 2017-12-06 닛산 가가쿠 고교 가부시키 가이샤 광가교기를 가지는 단차 기판 피복 조성물
KR20180120692A (ko) 2016-03-10 2018-11-06 닛산 가가쿠 가부시키가이샤 탄소원자간의 불포화결합에 의한 광가교기를 갖는 화합물을 포함하는 단차기판 피복 조성물
WO2019069502A1 (ja) 2017-10-06 2019-04-11 三井化学株式会社 下層膜形成用樹脂材料、レジスト下層膜、レジスト下層膜の製造方法および積層体
KR20190039472A (ko) 2016-08-08 2019-04-12 닛산 가가쿠 가부시키가이샤 광경화성 조성물 및 반도체장치의 제조방법
KR20190131543A (ko) 2017-04-03 2019-11-26 닛산 가가쿠 가부시키가이샤 광가교기를 갖는 폴리에테르수지를 포함하는 단차기판 피복조성물
KR20190137845A (ko) 2017-04-14 2019-12-11 닛산 가가쿠 가부시키가이샤 탄소원자간의 불포화결합에 의한 플라즈마 경화성 화합물을 포함하는 단차기판 피복막 형성 조성물
KR20200003087A (ko) 2017-05-31 2020-01-08 미쓰이 가가쿠 가부시키가이샤 하층막 형성용 재료, 레지스트 하층막, 레지스트 하층막의 제조 방법 및 적층체
KR20200038921A (ko) 2017-08-09 2020-04-14 닛산 가가쿠 가부시키가이샤 가교성 화합물을 함유하는 광경화성 단차기판 피복 조성물
KR20200052884A (ko) 2017-09-13 2020-05-15 닛산 가가쿠 가부시키가이샤 경화성 관능기를 갖는 화합물을 포함하는 단차기판 피복 조성물
WO2020162183A1 (ja) 2019-02-07 2020-08-13 三井化学株式会社 下層膜形成用材料、レジスト下層膜および積層体
KR20200098595A (ko) 2017-12-20 2020-08-20 닛산 가가쿠 가부시키가이샤 광경화성 실리콘함유 피복막 형성 조성물
KR20210138665A (ko) 2019-03-12 2021-11-19 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물
KR20220038346A (ko) 2019-07-18 2022-03-28 닛산 가가쿠 가부시키가이샤 경화성 관능기를 갖는 화합물을 포함하는 단차기판 피복 조성물
WO2022196662A1 (ja) * 2021-03-16 2022-09-22 日産化学株式会社 レジスト下層膜形成組成物
WO2024048487A1 (ja) * 2022-08-29 2024-03-07 日産化学株式会社 ギャップフィル材形成用組成物
WO2024106454A1 (ja) 2022-11-16 2024-05-23 日産化学株式会社 クルクミン誘導体を有するレジスト下層膜形成用組成物
WO2024128190A1 (ja) 2022-12-15 2024-06-20 日産化学株式会社 レジスト下層膜形成用組成物
KR20240110876A (ko) 2021-11-30 2024-07-16 닛산 가가쿠 가부시키가이샤 하이드록시계피산 유도체를 갖는 레지스트 하층막 형성용 조성물
WO2025203678A1 (ja) * 2024-03-29 2025-10-02 大阪有機化学工業株式会社 化合物、光配向膜用組成物、光配向膜、積層体、および位相差膜

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250042775A (ko) * 2022-07-29 2025-03-27 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성용 조성물

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62215606A (ja) * 1986-03-18 1987-09-22 Agency Of Ind Science & Technol 感光性樹脂の製造方法
WO2003017002A1 (en) * 2001-08-20 2003-02-27 Nissan Chemical Industries, Ltd. Composition for forming antireflective film for use in lithography
JP2004533637A (ja) * 2001-04-17 2004-11-04 ブルーワー サイエンス アイ エヌ シー． 改善されたスピンボウル適合性を有する反射防止コーティング組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62215606A (ja) * 1986-03-18 1987-09-22 Agency Of Ind Science & Technol 感光性樹脂の製造方法
JP2004533637A (ja) * 2001-04-17 2004-11-04 ブルーワー サイエンス アイ エヌ シー． 改善されたスピンボウル適合性を有する反射防止コーティング組成物
WO2003017002A1 (en) * 2001-08-20 2003-02-27 Nissan Chemical Industries, Ltd. Composition for forming antireflective film for use in lithography

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* Cited by examiner, † Cited by third party
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US20110230058A1 (en) * 2008-11-27 2011-09-22 Nissan Chemical Industries, Ltd. Composition for forming resist underlayer film with reduced outgassing
JP2010181453A (ja) * 2009-02-03 2010-08-19 Nissan Chem Ind Ltd レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
WO2015019961A1 (ja) * 2013-08-08 2015-02-12 日産化学工業株式会社 窒素含有環化合物を含むポリマーを含むレジスト下層膜形成組成物
CN105431780A (zh) * 2013-08-08 2016-03-23 日产化学工业株式会社 含有包含含氮环化合物的聚合物的抗蚀剂下层膜形成用组合物
KR20160040521A (ko) * 2013-08-08 2016-04-14 닛산 가가쿠 고교 가부시키 가이샤 질소함유 환화합물을 포함하는 폴리머를 포함하는 레지스트 하층막 형성조성물
JPWO2015019961A1 (ja) * 2013-08-08 2017-03-02 日産化学工業株式会社 窒素含有環化合物を含むポリマーを含むレジスト下層膜形成組成物
KR102307200B1 (ko) * 2013-08-08 2021-10-01 닛산 가가쿠 가부시키가이샤 질소함유 환화합물을 포함하는 폴리머를 포함하는 레지스트 하층막 형성조성물
US10113083B2 (en) 2013-08-08 2018-10-30 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition containing polymer which contains nitrogen-containing ring compound
CN105431780B (zh) * 2013-08-08 2020-01-03 日产化学工业株式会社 含有包含含氮环化合物的聚合物的抗蚀剂下层膜形成用组合物
US10242871B2 (en) 2014-10-21 2019-03-26 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition including a compound having an amino group protected with a tert-butoxycarbonyl group
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WO2022196662A1 (ja) * 2021-03-16 2022-09-22 日産化学株式会社 レジスト下層膜形成組成物
KR102781156B1 (ko) 2021-03-16 2025-03-14 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물
KR20240110876A (ko) 2021-11-30 2024-07-16 닛산 가가쿠 가부시키가이샤 하이드록시계피산 유도체를 갖는 레지스트 하층막 형성용 조성물
WO2024048487A1 (ja) * 2022-08-29 2024-03-07 日産化学株式会社 ギャップフィル材形成用組成物
WO2024106454A1 (ja) 2022-11-16 2024-05-23 日産化学株式会社 クルクミン誘導体を有するレジスト下層膜形成用組成物
KR20250107863A (ko) 2022-11-16 2025-07-14 닛산 가가쿠 가부시키가이샤 쿠르쿠민 유도체를 갖는 레지스트 하층막 형성용 조성물
EP4621487A1 (en) 2022-11-16 2025-09-24 Nissan Chemical Corporation Resist underlayer film-forming composition containing curcumin derivative
WO2024128190A1 (ja) 2022-12-15 2024-06-20 日産化学株式会社 レジスト下層膜形成用組成物
EP4636487A1 (en) 2022-12-15 2025-10-22 Nissan Chemical Corporation Composition for forming resist underlayer film
WO2025203678A1 (ja) * 2024-03-29 2025-10-02 大阪有機化学工業株式会社 化合物、光配向膜用組成物、光配向膜、積層体、および位相差膜

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