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WO2009034998A1 - 窒素含有シリル基を含むポリマーを含有するレジスト下層膜形成組成物 - Google Patents

窒素含有シリル基を含むポリマーを含有するレジスト下層膜形成組成物 Download PDF

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Publication number
WO2009034998A1
WO2009034998A1 PCT/JP2008/066331 JP2008066331W WO2009034998A1 WO 2009034998 A1 WO2009034998 A1 WO 2009034998A1 JP 2008066331 W JP2008066331 W JP 2008066331W WO 2009034998 A1 WO2009034998 A1 WO 2009034998A1
Authority
WO
WIPO (PCT)
Prior art keywords
formula
underlayer film
resist underlayer
nitrogenous
composition containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/066331
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English (en)
French (fr)
Inventor
Makoto Nakajima
Wataru Shibayama
Yuta Kanno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Priority to JP2009532198A priority Critical patent/JP5152532B2/ja
Priority to CN2008801065699A priority patent/CN101802712B/zh
Priority to US12/676,687 priority patent/US8426112B2/en
Priority to EP08831233.5A priority patent/EP2196854B1/en
Publication of WO2009034998A1 publication Critical patent/WO2009034998A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • H10P76/204—
    • H10P76/2041—

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

【課題】 　フォトレジストとのインタ－ミキシングを起こさず、フォトレジストに比較して大きなドライエッチング速度を有するリソグラフィ－用レジスト下層膜及び該下層膜を形成するためのレジスト下層膜形成組成物を提供する。 【解決手段】 【請求項１】　下記式（１） （式中、Ｘ1は、式（２）、式（３）、式（４）又は式（４－１）で表わされる基を表わす。）で表わされる部分構造を含むポリマー及び溶剤を含むリソグラフィー用レジスト下層膜形成組成物である。該ポリマーは、式（１）で表わされる部分構造に加えて、更に、式（５） （Ｒ1）a（Ｒ3）bＳｉ（Ｏ－）4-(a+b)          式（５） で表わされる部分構造、及び／又は式（６） 〔（Ｒ4）cＳｉ（Ｏ－）3-c〕2Ｙ        式（６） で表わされる部分構造を含み得る。
PCT/JP2008/066331 2007-09-11 2008-09-10 窒素含有シリル基を含むポリマーを含有するレジスト下層膜形成組成物 Ceased WO2009034998A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009532198A JP5152532B2 (ja) 2007-09-11 2008-09-10 窒素含有シリル基を含むポリマーを含有するレジスト下層膜形成組成物
CN2008801065699A CN101802712B (zh) 2007-09-11 2008-09-10 含有具有带氮的甲硅烷基的聚合物的、抗蚀剂下层膜形成用组合物
US12/676,687 US8426112B2 (en) 2007-09-11 2008-09-10 Resist underlayer film forming composition containing polymer having nitrogen-containing silyl group
EP08831233.5A EP2196854B1 (en) 2007-09-11 2008-09-10 Composition containing polymer having nitrogenous silyl group for forming resist underlayer film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-235852 2007-09-11
JP2007235852 2007-09-11

Publications (1)

Publication Number Publication Date
WO2009034998A1 true WO2009034998A1 (ja) 2009-03-19

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PCT/JP2008/066331 Ceased WO2009034998A1 (ja) 2007-09-11 2008-09-10 窒素含有シリル基を含むポリマーを含有するレジスト下層膜形成組成物

Country Status (7)

Country Link
US (1) US8426112B2 (ja)
EP (1) EP2196854B1 (ja)
JP (1) JP5152532B2 (ja)
KR (1) KR101570138B1 (ja)
CN (1) CN101802712B (ja)
TW (1) TWI450041B (ja)
WO (1) WO2009034998A1 (ja)

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WO2011102470A1 (ja) 2010-02-19 2011-08-25 日産化学工業株式会社 窒素含有環を有するシリコン含有レジスト下層膜形成組成物
WO2013005633A1 (ja) * 2011-07-04 2013-01-10 Jnc株式会社 イソシアヌル骨格、エポキシ基およびＳｉＨ基を有するオルガノポリシロキサンまたはシルセスキオキサン骨格を含む化合物および該化合物を密着付与材として含む熱硬化性樹脂組成物、硬化物、および光半導体用封止材
WO2013161372A1 (ja) * 2012-04-23 2013-10-31 日産化学工業株式会社 添加剤を含むケイ素含有ｅｕｖレジスト下層膜形成組成物
US8815494B2 (en) 2008-12-19 2014-08-26 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicon having anion group
US8828879B2 (en) 2009-09-16 2014-09-09 Nissan Chemical Industries, Ltd. Silicon-containing composition having sulfonamide group for forming resist underlayer film
US8864894B2 (en) 2008-08-18 2014-10-21 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicone having onium group
JP5618095B2 (ja) * 2009-06-02 2014-11-05 日産化学工業株式会社 スルフィド結合を有するシリコン含有レジスト下層膜形成組成物
KR20140144207A (ko) * 2012-03-27 2014-12-18 닛산 가가쿠 고교 가부시키 가이샤 페닐인돌 함유 노볼락 수지를 포함하는 레지스트 하층막 형성 조성물
KR20150063416A (ko) 2012-09-24 2015-06-09 닛산 가가쿠 고교 가부시키 가이샤 헤테로원자를 갖는 환상유기기함유 실리콘함유 레지스트 하층막 형성조성물
JPWO2015041341A1 (ja) * 2013-09-20 2017-03-02 リンテック株式会社 硬化性組成物、硬化物および硬化性組成物の使用方法
JP2017120359A (ja) * 2015-12-24 2017-07-06 Jsr株式会社 半導体用ケイ素含有膜形成用材料及びパターン形成方法
WO2018097103A1 (ja) * 2016-11-24 2018-05-31 旭硝子株式会社 ポリシロキサンゲル、その製造方法、断熱材および合わせガラス
JP2020164506A (ja) * 2019-03-28 2020-10-08 日産化学株式会社 アルコキシケイ素化合物の精製方法
KR20210060220A (ko) * 2019-11-18 2021-05-26 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
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WO2013022099A1 (ja) * 2011-08-10 2013-02-14 日産化学工業株式会社 スルホン構造を有するシリコン含有レジスト下層膜形成組成物
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US11392037B2 (en) 2008-02-18 2022-07-19 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicone having cyclic amino group
US8864894B2 (en) 2008-08-18 2014-10-21 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicone having onium group
US8815494B2 (en) 2008-12-19 2014-08-26 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicon having anion group
US8835093B2 (en) 2008-12-19 2014-09-16 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicon having anion group
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JP5618095B2 (ja) * 2009-06-02 2014-11-05 日産化学工業株式会社 スルフィド結合を有するシリコン含有レジスト下層膜形成組成物
US8828879B2 (en) 2009-09-16 2014-09-09 Nissan Chemical Industries, Ltd. Silicon-containing composition having sulfonamide group for forming resist underlayer film
US9023588B2 (en) 2010-02-19 2015-05-05 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicon having nitrogen-containing ring
CN102754034A (zh) * 2010-02-19 2012-10-24 日产化学工业株式会社 具有含氮环的含有硅的形成抗蚀剂下层膜的组合物
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KR102061530B1 (ko) * 2010-02-19 2020-01-02 닛산 가가쿠 가부시키가이샤 질소 함유환을 가지는 실리콘 함유 레지스트 하층막 형성 조성물
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US8987358B2 (en) 2011-07-04 2015-03-24 Jnc Corporation Compound including organopolysiloxane or silsesquioxane skeleton having isocyanuric skeleton, epoxy group and SiH group, thermosetting resin composition containing the compound as adhesion-imparting agent, hardened material and sealing agent for optical semiconductor
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CN103687897A (zh) * 2011-07-04 2014-03-26 捷恩智株式会社 包含具有异氰尿酸酯骨架、环氧基以及SiH基的有机聚硅氧烷或硅倍半氧烷骨架的化合物以及含有该化合物作为密着赋予材料的热硬化性树脂组合物、硬化物以及光半导体用密封材料
CN103687897B (zh) * 2011-07-04 2016-04-13 捷恩智株式会社 包含具有异氰尿酸酯环骨架、环氧基以及SiH基的硅倍半氧烷骨架的化合物及其应用
KR102072490B1 (ko) 2012-03-27 2020-02-03 닛산 가가쿠 가부시키가이샤 페닐인돌 함유 노볼락 수지를 포함하는 레지스트 하층막 형성 조성물
KR20140144207A (ko) * 2012-03-27 2014-12-18 닛산 가가쿠 고교 가부시키 가이샤 페닐인돌 함유 노볼락 수지를 포함하는 레지스트 하층막 형성 조성물
JPWO2013161372A1 (ja) * 2012-04-23 2015-12-24 日産化学工業株式会社 添加剤を含むケイ素含有ｅｕｖレジスト下層膜形成組成物
US9627217B2 (en) 2012-04-23 2017-04-18 Nissan Chemical Industries, Ltd. Silicon-containing EUV resist underlayer film-forming composition including additive
WO2013161372A1 (ja) * 2012-04-23 2013-10-31 日産化学工業株式会社 添加剤を含むケイ素含有ｅｕｖレジスト下層膜形成組成物
US10079146B2 (en) 2012-09-24 2018-09-18 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicon containing cyclic organic group having hetero atom
KR20150063416A (ko) 2012-09-24 2015-06-09 닛산 가가쿠 고교 가부시키 가이샤 헤테로원자를 갖는 환상유기기함유 실리콘함유 레지스트 하층막 형성조성물
JPWO2015041341A1 (ja) * 2013-09-20 2017-03-02 リンテック株式会社 硬化性組成物、硬化物および硬化性組成物の使用方法
JP2017120359A (ja) * 2015-12-24 2017-07-06 Jsr株式会社 半導体用ケイ素含有膜形成用材料及びパターン形成方法
WO2018097103A1 (ja) * 2016-11-24 2018-05-31 旭硝子株式会社 ポリシロキサンゲル、その製造方法、断熱材および合わせガラス
JP2020164506A (ja) * 2019-03-28 2020-10-08 日産化学株式会社 アルコキシケイ素化合物の精製方法
JP7651823B2 (ja) 2019-03-28 2025-03-27 日産化学株式会社 アルコキシケイ素化合物の精製方法
KR20210060220A (ko) * 2019-11-18 2021-05-26 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
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Also Published As

Publication number Publication date
EP2196854A1 (en) 2010-06-16
JP5152532B2 (ja) 2013-02-27
TWI450041B (zh) 2014-08-21
EP2196854A4 (en) 2010-11-24
US20100304305A1 (en) 2010-12-02
CN101802712A (zh) 2010-08-11
TW200931181A (en) 2009-07-16
EP2196854B1 (en) 2013-11-06
KR101570138B1 (ko) 2015-11-18
CN101802712B (zh) 2013-03-20
KR20100059972A (ko) 2010-06-04
JPWO2009034998A1 (ja) 2010-12-24
US8426112B2 (en) 2013-04-23

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