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TWI521660B - 凸塊結構與其形成方法 - Google Patents

凸塊結構與其形成方法 Download PDF

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TWI521660B
TWI521660B TW102133795A TW102133795A TWI521660B TW I521660 B TWI521660 B TW I521660B TW 102133795 A TW102133795 A TW 102133795A TW 102133795 A TW102133795 A TW 102133795A TW I521660 B TWI521660 B TW I521660B
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protective layer
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林彥良
曾裕仁
黃昶嘉
郭庭豪
陳承先
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台灣積體電路製造股份有限公司
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    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion

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Description

凸塊結構與其形成方法
本發明係有關於一種半導體結構，且特別有關於一種金屬凸塊結構與其形成方法。
一般而言，在發展日益密集的積體電路封裝時，若相鄰的連接器(例如金屬凸塊)之間的間距縮減，則凸塊下方金屬化(under bump metallurgy,UBM)特徵結構的尺寸亦會減少。伴隨而來的是，下方各層中的開口尺寸(例如聚亞醯胺(polyimide)層)亦會減少。此結果會導致較高的接觸電阻(contacat resistance,Rc)。
為了具有較多凸塊單元設計的變化性(flexibility)，需要一種新穎的凸塊結構，特別是一種較佳的結構，其可提供適當的低應力至其下方各層，例如極低介電常數介電層(extra Low K dielectric layers,ELK)、保護層與類似的層狀結構。
本發明提供一種凸塊結構，包括：一接觸元件形成於一基板之上；一保護層位於該基板上，其中該保護層具有一保護層開口暴露該接觸元件；一聚亞醯胺(polyimide)層位於該保護層之上，其中該聚亞醯胺層具有一聚亞醯胺層開口暴露 該接觸元件；一凸塊下方金屬化(UBM)特徵結構電性耦合到該接觸元件，其中該凸塊下方金屬化(UBM)特徵結構具有一凸塊下方金屬化特徵結構寬度；以及一銅柱位於該凸塊下方金屬化(UBM)特徵結構之上，其中該銅柱的一末端具有一柱狀結構寬度，該凸塊下方金屬化特徵結構寬度大於該柱狀結構寬度。
本發明另提供一種凸塊結構，包括：一接觸元件形成於一基板上；一保護層位於該基板上，其中該保護層具有一保護層開口暴露該接觸元件；一聚亞醯胺(polyimide)層位於該保護層之上，其中該聚亞醯胺層具有一聚亞醯胺層開口暴露該接觸元件，其中該聚亞醯胺層開口大於該保護層開口；一凸塊下方金屬化(UBM)特徵結構位於部分的該聚亞醯胺層與該保護層之上，且電性耦合到該接觸元件；以及一銅柱位於該凸塊下方金屬化(UBM)特徵結構之上。
本發明亦提供一種凸塊結構之形成方法，包括：形成一接觸元件於一基板之上；形成一保護層於該基板上，其中該保護層具有一保護層開口暴露該接觸元件；形成一聚亞醯胺(polyimide)層於該保護層之上，其中該聚亞醯胺層具有一聚亞醯胺層開口暴露該接觸元件；電性耦合一凸塊下方金屬化(UBM)特徵結構到該接觸元件，其中該凸塊下方金屬化(UBM)特徵結構具有一凸塊下方金屬化特徵結構寬度；以及形成一銅柱於該凸塊下方金屬化(UBM)特徵結構之上，其中該銅柱的一末端具有一柱狀結構寬度，該凸塊下方金屬化特徵結構寬度大於該柱狀結構寬度。
10‧‧‧梯形凸塊結構
12‧‧‧基板
14‧‧‧絕緣層
16‧‧‧接觸元件
18‧‧‧保護層
20‧‧‧聚亞醯胺(polyimide)層
22‧‧‧凸塊下方金屬化(under bump metallurgy,UBM)特徵結構
24‧‧‧銅柱(copper pillar)
26‧‧‧焊料特徵結構(solder feature)
28‧‧‧保護層開口
30‧‧‧聚亞醯胺(polyimide)開口
32‧‧‧凸塊下方金屬化(UBM)寬度
34‧‧‧銅柱(copper pillar)的側壁
36‧‧‧末端
38‧‧‧柱狀結構寬度
40‧‧‧設置端(mounted end)
42‧‧‧設置寬度
44‧‧‧導線(trace)
46‧‧‧元件
48‧‧‧凸塊導線直連(bump on trace,BOT)組裝
50‧‧‧距離
52‧‧‧表格
60‧‧‧方法
62‧‧‧形成接觸元件於基板之上
64‧‧‧形成保護層於基板之上
66‧‧‧形成聚亞醯胺(polyimide)層於保護層之上
68‧‧‧電性耦合凸塊下方金屬化(UBM)特徵結構與接觸元件
70‧‧‧設置銅柱於凸塊下方金屬化(UBM)特徵結構之上
第1圖顯示梯形凸塊結構之實施例之剖面圖。
第2圖顯示梯形凸塊結構的實施例電性耦合到一基板導線以形成凸塊導線直連(BOT)結構。
第3圖顯示第1-2圖梯形結構實施例的應力模型的表格。
第4圖顯示形成第1圖之梯形凸塊結構之流程圖。
本發明將藉由部份較佳實施例描述梯形凸塊結構(ladder bump structure)應用於凸塊導線直連(bump on trace,BOT)組裝。然而，本發明所揭露的概念亦可適用於其他半導體結構或電路。
現在請參照第1圖，顯示梯形凸塊結構10的一實施例。如圖所示，梯形凸塊結構10包括基板12、絕緣層14、接觸元件16、保護層18、聚亞醯胺(polyimide)層20、凸塊下方金屬化(under bump metallurgy,UBM)特徵結構22、銅柱(copper pillar)24、以及焊料特徵結構(solder feature)26。
舉例而言，基板12可以是矽晶圓或含矽的材料層。舉例而言，在一實施例中，基板12可以是積體電路元件的上層，例如上層金屬層、保護層或類似之層狀結構。如同本領域人士所熟知，在一實施例中，積體電路(圖中未顯示)形成於基板12之上及/或之中。基板12的各個層狀結構及特徵結構，包括電晶體(transistors)、內連線層狀結構(interconnect layers)、保護後內連線結構(post passivation interconnects)、重新分配層(redistribution layers)以及類似的結構等等受到省 略而未顯示於圖式中，因為這些結構對於理解本發明所揭露的內容並非必要。
仍請參照第1圖，基板12支撐絕緣層14。在一實施例中，絕緣層14為極低介電常數材料(extra Low K,ELK)介電層。如圖所示，絕緣層14通常支撐接觸元件16。在一實施例中，接觸元件16為一金屬墊片(例如鋁墊片)。在一實施例中，接觸元件16包括其他合適的金屬或導電材料。
請繼續參照第1圖，保護層18形成於絕緣層14與基板12之上。另言之，保護層18覆蓋於絕緣層14與基板12之上。如圖所示，保護層18延伸至接觸元件16的外部之上。在一實施例中，保護層18鄰接(abut)或直接佔據(engage)接觸元件16。保護層18亦定義出保護層開口28，此保護層開口28暴露出下層的接觸元件16。在一實施例中，保護層開口28之尺寸為約12.5μm-37.5μm。
請繼續參照第1圖，聚亞醯胺(polyimide)層20形成於保護層18之上。另言之，聚亞醯胺(polyimide)層20覆蓋於保護層18之上。如圖所示，聚亞醯胺(polyimide)層20延伸至接觸元件16的外部之上。在一實施例中，一部分的保護層18介於聚亞醯胺(polyimide)層20與接觸元件16之間。聚亞醯胺(polyimide)層20定義出聚亞醯胺(polyimide)開口30。在一實施例中，聚亞醯胺(polyimide)開口30之尺寸為約25μm-75μm。
請繼續參照第1圖，凸塊下方金屬化(UBM)特徵結構22電性連接到接觸元件16。在一實施例中，凸塊下方金屬化(UBM)特徵結構22由鈦、氮化鈦、銅鎳合金、鋁或類似的材料 所組成，且其厚度，也許，大約為0.1μm-5μm，視應用的需求而定。在一實施例中，凸塊下方金屬化(UBM)特徵結構22設置於鄰接(abut)或佔據(engage)部分的聚亞醯胺(polyimide)層20、保護層18與接觸元件16。如圖所示，凸塊下方金屬化(UBM)特徵結構22定義出凸塊下方金屬化(UBM)寬度32。凸塊下方金屬化(UBM)寬度32(又稱為凸塊下方金屬化開口)一般是凸塊下方金屬化(UBM)特徵結構22的側向或水平長度，方向如第1圖所繪製。
仍請參照第1圖，銅柱(copper pillar)24(又稱為凸塊)位於或設置於凸塊下方金屬化(UBM)特徵結構22之上。在一實施例中，除了使用銅之外，柱狀結構24可由其他材料所形成，舉例而言，例如，錫、鋁或其他合適的材料。在一實施例中，金屬氧化物(例如氧化銅(cupric oxide,CuO)、氧化銅(cuprous oxide,Cu2O)、氧化鋁(aluminum oxide,Al2O3)等等)形成於銅柱(copper pillar)24的側壁34上。銅柱(copper pillar)24的末端(distal end)位於距離基板12最遠的位置，定義出柱狀結構寬度38。柱狀結構寬度38一般是銅柱(copper pillar)24的末端36的側向或水平長度，方向如第1圖所繪製。在一實施例中，末端36的尺寸為約30μm-80μm。銅柱(copper pillar)24的設置端(mounted end)40為最接近基板12的梯形端點，定義出設置寬度42。在一實施例中，設置端40的設置寬度42為約40μm-90μm。
從前所述應可得知設置寬度42大於銅柱寬度38。舉例而言，此一條件可藉由使銅柱(copper pillar)24的設置端 (mounted end)40相對大於末端36而得以實現。舉例而言，此一條件可藉由使銅柱(copper pillar)24的末端36相對小於設置端(mounted end)40而得以實現，如第2圖所示。
熟知本領域之人士應可理解的是，此技術不希望增加相鄰的凸塊間的間距。這代表了末端36的柱狀結構寬度38不應該被增加到超過設計的尺寸。因此，為了使銅柱24具有平截尖端的錐狀結構(truncated cone))，應該增加設置端40的設置寬度42，藉以獲得具有下列優點的結構。設置端40具有較寬的設置寬度42可減低銅柱24與聚亞醯胺(polyimide)層20脫層(delamination)的可能性，另外也可以減輕下方各層的應力影響，下方各層包括，例如，極低介電常數介電層(extra Low K dielectric layers,ELK)(例如絕緣層14)。
如第1-2圖所示，銅柱24一般具有錐狀的或傾斜的側剖面。的確，銅柱24一般具有平截尖端的錐狀結構(truncated cone)。在一實施例中，從末端36到設置端40沿著銅柱24的側壁34的整個高度(亦即，長度)，銅柱24的側壁34為線性的。
如第1-2圖所示，藉由微影製程圖案化銅柱24。的確，於微影製程中，為了產生如第1-2圖所示的銅柱24形狀，光阻可以被適當地塑形。可藉由適當的技術而得到梯形的側剖面，例如使用具有不同特性的多重光阻層或使用不同的光罩進行多次的曝光。
請繼續參照第1圖，焊料特徵結構(solder feature)26設置於或位於銅柱24之上。在一實施例中，焊料特徵結構(solder feature)26可以是球狀、凸塊、或類似的結構， 其可以接觸到另一電性元件，並且可藉由回焊將兩個元件接合在一起。舉例而言，焊料特徵結構(solder feature)26可以連接到另一元件46(例如封裝、積體電路等)上的導線(trace)44，並藉由回焊以產生如第2圖所示的凸塊導線直連(bump on trace,BOT)組裝48。須注意的是，銅柱24的傾斜側壁34提供足夠的距離50給相鄰的導線42，以避免不想要的橋接(bridging)現象。
此實施例提供的另一個優點特徵顯示於第2圖中。藉由凸塊導線直連(bump on trace,BOT)組裝48與其下方元件46上之導線44之間的連接，可使基板12的積體電路電性連接至元件46。元件46可以是，例如另一積體電路元件、中介層(interposer)、印刷電路板(PCB)或類似的元件。如上所述，藉由具有平截尖端的錐狀(truncated cone)結構，銅柱24頂部的柱狀結構寬度38小於銅柱24底部的設置寬度42。
這代表對基板46上具有一定間隔之相鄰凸塊(圖中未顯示)而言，相鄰凸塊頂部的間隔(亦即，間距(pitch))是較大的。如果在凸塊頂部的設置端40的設置寬度42等於凸塊底部的末端36的柱狀結構寬度38，對於在基板46上具有平截尖端的錐狀(truncated cone)結構且具有既定間隔的凸塊而言，第2圖顯示位於位於下方元件46上的導線44可以設置得較為靠近。此特徵結構可使導線40具有較窄的間距，並且可使相鄰凸塊/導線接點之間橋接或短路的可能性降到最低。
熟知本領域之人士應可得知，此處所討論的各種寬度與間隔的特定尺寸是設計上的選擇，可視特定的技術節點與應用領域而有所不同。
本揭露的另一優點在於，在聚亞醯胺(polyimide)層20中的開口30之寬度大於在保護層18中的開口28之寬度，如第1圖所示。較寬的開口30提供低接觸電阻(contacat resistance,Rc)，且也可對下方的保護層產生較少的應力影響。如圖所示，開口28,30的結合使銅柱24或凸塊具有梯形側剖面或階梯形側剖面。
此外，在一實施例中，柱狀結構寬度38大於聚亞醯胺(polyimide)層開口30。再者，在一實施例中，柱狀結構寬度38大於保護層開口28。於一實施中，柱狀結構寬度38對凸塊下方金屬化(UBM)寬度32的比率為約0.75到約0.97。在一實施例中，保護層開口28對聚亞醯胺(polyimide)層開口30的比率為約0.2到約0.5。於一實施中，聚亞醯胺(polyimide)層開口30對凸塊下方金屬化(UBM)寬度32的比率為約0.2到約0.7。
請繼續參照第1圖，在一實施例中，凸塊下方金屬化(UBM)寬度32大於柱狀結構寬度38，柱狀結構寬度38大於聚亞醯胺(polyimide)層開口30，且聚亞醯胺(polyimide)層開口30大於保護層開口28。此外，接觸元件16大於聚亞醯胺(polyimide)層開口30與保護層開口28。再者，於一實施中，接觸元件16的尺寸大約等於銅柱寬度38，但小於凸塊下方金屬化(UBM)寬度32。
請參照第3圖，表格52顯示第1-2圖之梯形凸塊實施例的應力模型。如第3圖所示，當聚亞醯胺(polyimide)層開口30相對於凸塊下方金屬化(UBM)寬度32的比率(請參見表格中PIO(04)/UBM(05)的比率)介於0.2到0.7之間時(請參見灰色部 分)，施加到絕緣層14(例如極低介電常數介電層(extra Low K dielectric layers,ELK))與凸塊下方金屬化(under bump metallurgy,UBM)特徵結構22的應力是相對低的。此外，當保護層開口28對聚亞醯胺(polyimide)層開口30(標示為保護層(03)/PIO(24)的比率)介於0.2到0.5之間時(請參見灰色部分)，施加到絕緣層14的應力是相對低的。
請參照第4圖，方法60顯示形成本揭露實施例之梯形凸塊結構10的步驟。於方塊62中，接觸元件16形成於基板12之上。於方塊64中，保護層18形成於基板12之上。保護層18包括保護層開口28，以暴露出接觸元件16。於方塊66中，聚亞醯胺(polyimide)層20形成於保護層18之上。聚亞醯胺(polyimide)層20包括聚亞醯胺(polyimide)開口30，以暴露出接觸元件16。
於方塊68中，凸塊下方金屬化(under bump metallurgy,UBM)特徵結構22電性耦合至接觸元件16。如上所述，凸塊下方金屬化(UBM)特徵結構22定義出凸塊下方金屬化(UBM)特徵結構寬度32。於方塊70中，銅柱24形成於凸塊下方金屬化(UBM)特徵結構22之上。銅柱24的末端36定義出銅柱寬度38。凸塊下方金屬化(UBM)特徵結構寬度32大於銅柱寬度38。在一實施例中，焊料特徵結構接著設置於銅柱24的頂部之上。
根據以上所述，應可了解的是，梯形凸塊結構10之實施例提供了有利的特徵。舉例而言，凸塊結構(亦即，梯形凸塊結構)創造出具有細間距的凸塊導線直連(bump on trace,BOT)組裝48，而不會發生橋接現象。此外，梯形凸塊結構10 之實施例提供較多凸塊單元設計的變化性(flexibility)，提供較低的應力到矽層、極低介電常數介電層(extra Low K dielectric layers,ELK)、保護層等等。此外，梯形凸塊結構10之實施例提供銅柱24低的接觸電阻(Rc)以及梯形結構。再者，梯形凸塊結構10之實施例避免極低介電常數介電層的脫層，以及避免保護層18與凸塊下方金屬化(UBM)特徵結構22的破裂。此外，梯形凸塊結構10之實施例提供較佳的組裝產率(assembly yield)。
以下的引用文獻與本發明的主題相關。這些引用文獻之全部內容皆透過引用方式併入本文：美國專利公開號：2011/0285023，沈，等人。2011年11月24日，題目為「具有不同尺寸的基板內連線結構(Substructure Interconnections Having Different Sizes)」。
本發明提供一種示範性梯形凸塊結構，包括：一接觸元件形成於一基板之上；一保護層位於該基板上，其中該保護層具有一保護層開口暴露該接觸元件；一聚亞醯胺(polyimide)層位於該保護層之上，其中該聚亞醯胺層具有一聚亞醯胺層開口暴露該接觸元件；一凸塊下方金屬化(UBM)特徵結構電性耦合到該接觸元件，其中該凸塊下方金屬化(UBM)特徵結構具有一凸塊下方金屬化特徵結構寬度；以及一銅柱位於該凸塊下方金屬化(UBM)特徵結構之上，其中該銅柱的一末端具有一柱狀結構寬度，該凸塊下方金屬化特徵結構寬度大於該柱狀結構寬度。
本發明另提供一種凸塊結構，包括：一接觸元件形成於一基板上；一保護層位於該基板上，其中該保護層具有 一保護層開口暴露該接觸元件；一聚亞醯胺(polyimide)層位於該保護層之上，其中該聚亞醯胺層具有一聚亞醯胺層開口暴露該接觸元件，其中該聚亞醯胺層開口大於該保護層開口；一凸塊下方金屬化(UBM)特徵結構位於部分的該聚亞醯胺層與該保護層之上，且電性耦合到該接觸元件；以及一銅柱位於該凸塊下方金屬化(UBM)特徵結構之上。
本發明亦提供一種凸塊結構之形成方法，包括：形成一接觸元件於一基板之上；形成一保護層於該基板上，其中該保護層具有一保護層開口暴露該接觸元件；形成一聚亞醯胺(polyimide)層於該保護層之上，其中該聚亞醯胺層具有一聚亞醯胺層開口暴露該接觸元件；電性耦合一凸塊下方金屬化(UBM)特徵結構到該接觸元件，其中該凸塊下方金屬化(UBM)特徵結構具有一凸塊下方金屬化特徵結構寬度；以及形成一銅柱於該凸塊下方金屬化(UBM)特徵結構之上，其中該銅柱的一末端具有一柱狀結構寬度，該凸塊下方金屬化特徵結構寬度大於該柱狀結構寬度。
10‧‧‧梯形凸塊結構
12‧‧‧基板
14‧‧‧絕緣層
16‧‧‧接觸元件
18‧‧‧保護層
20‧‧‧聚亞醯胺(polyimide)層
22‧‧‧凸塊下方金屬化(under bump metallurgy,UBM)特徵結構
24‧‧‧銅柱(copper pillar)
26‧‧‧焊料特徵結構(solder feature)
28‧‧‧保護層開口
30‧‧‧聚亞醯胺(polyimide)開口
32‧‧‧凸塊下方金屬化(UBM)寬度
34‧‧‧銅柱(copper pillar)的側壁
36‧‧‧末端
38‧‧‧柱狀結構寬度
40‧‧‧設置端(mounted end)
42‧‧‧設置寬度

Claims (8)

  1. 一種凸塊結構，包括：一接觸元件形成於一基板之上；一保護層位於該基板上，其中該保護層具有一保護層開口暴露該接觸元件；一聚亞醯胺(polyimide)層位於該保護層之上，其中該聚亞醯胺層具有一聚亞醯胺層開口暴露該接觸元件；一凸塊下方金屬化(UBM)特徵結構電性耦合到該接觸元件，其中該凸塊下方金屬化(UBM)特徵結構具有一凸塊下方金屬化特徵結構寬度；以及一銅柱位於該凸塊下方金屬化(UBM)特徵結構之上，其中該銅柱具有錐形線性(tapering linear)側剖面，且其中該銅柱的一末端具有一柱狀結構寬度，該凸塊下方金屬化特徵結構寬度大於該柱狀結構寬度，且該柱狀結構寬度大於該聚亞醯胺層開口。
  2. 如申請專利範圍第1項所述之凸塊結構，其中該聚亞醯胺層開口大於該保護層開口。
  3. 如申請專利範圍第1項所述之凸塊結構，其中該柱狀結構寬度大於該保護層開口。
  4. 如申請專利範圍第1項所述之凸塊結構，其中該凸塊下方金屬化特徵結構鄰接部分的該聚亞醯胺層與該保護層。
  5. 如申請專利範圍第1項所述之凸塊結構，其中一焊料結構位於該銅柱的該末端上。
  6. 一種凸塊結構，包括： 一接觸元件形成於一基板上；一保護層位於該基板上，其中該保護層具有一保護層開口暴露該接觸元件；一聚亞醯胺(polyimide)層位於該保護層之上，其中該聚亞醯胺層具有一聚亞醯胺層開口暴露該接觸元件，其中該聚亞醯胺層開口大於該保護層開口；一凸塊下方金屬化(UBM)特徵結構位於部分的該聚亞醯胺層與該保護層之上，且電性耦合到該接觸元件；以及一銅柱位於該凸塊下方金屬化(UBM)特徵結構之上，其中該銅柱具有錐形線性(tapering linear)側剖面，且其中該銅柱的一末端具有一柱狀結構寬度，且該凸塊下方金屬化(UBM)特徵結構具有一凸塊下方金屬化特徵結構寬度，其中該凸塊下方金屬化特徵結構寬度大於該柱狀結構寬度，且該柱狀結構寬度大於該聚亞醯胺層開口。
  7. 如申請專利範圍第6項所述之凸塊結構，其中該凸塊下方金屬化特徵結構寬度大於該保護層開口。
  8. 一種凸塊結構之形成方法，包括：形成一接觸元件於一基板之上；形成一保護層於該基板上，其中該保護層具有一保護層開口暴露該接觸元件；形成一聚亞醯胺(polyimide)層於該保護層之上，其中該聚亞醯胺層具有一聚亞醯胺層開口暴露該接觸元件；電性耦合一凸塊下方金屬化(UBM)特徵結構到該接觸元件，其中該凸塊下方金屬化(UBM)特徵結構具有一凸塊下方 金屬化特徵結構寬度；以及形成一銅柱於該凸塊下方金屬化(UBM)特徵結構之上，其中該銅柱具有錐形線性(tapering linear)側剖面，且其中該銅柱的一末端具有一柱狀結構寬度，該凸塊下方金屬化特徵結構寬度大於該柱狀結構寬度，且該柱狀結構寬度大於該聚亞醯胺層開口。
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