TW201913827A - 高壓高溫退火腔室 - Google Patents
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Abstract
本揭露案關於用於退火半導體基板的裝置及方法。在一個實施例中，揭露一種批量處理腔室。批量處理腔室，包括腔室主體，包覆處理區域；氣體面板，配置成提供處理流體至處理區域中；凝結器，流體連接至處理區域；及溫度控制的流體迴路，配置成將處理流體維持在高於處理流體的凝結點的溫度。處理區域配置成在處理期間保留複數個基板。凝結器配置成將處理流體凝結成液態。
Description
本揭露案的實施例大致關於積體電路的製作，且具體而言關於用於退火一或更多半導體基板之裝置及方法。
半導體設備的成形，例如記憶體設備、邏輯設備、微處理器等等，牽涉在半導體基板上沉積一或更多薄膜。薄膜用以建立製造半導體設備所需的電路。退火為熱處置處理，用以在沉積的薄膜上達成各種作用，以改良其電子特性。舉例而言，退火可用以活化摻雜、緊密沉積的薄膜、或改變成長薄膜的狀態。
半導體設備的幾何，自從數十年以前引入便在尺寸上劇烈減少。增加設備密度導致結構特徵具有減小的空間尺寸。舉例而言，形成現代半導體設備的結構特徵的間隙及溝槽的縱橫比（深度對寬度的比例）已窄化至一個程度，使得以材料填充間隙變得極度具挑戰性。
因此，需要一種改良的裝置及方法，用於退火半導體基板，而可適應與製造現代半導體設備相關聯的挑戰。
本揭露案的實施例關於一種用於退火一或更多半導體基板之裝置及方法。在一個實施例中，揭露一種批量處理腔室。批量處理腔室包括腔室主體，包覆處理區域；氣體面板，配置成提供處理流體至處理區域中；凝結器，流體連接至處理區域；及溫度控制的流體迴路，配置成將處理流體維持在高於處理流體的凝結點的溫度。處理區域配置成在處理期間容納複數個基板。凝結器配置成將處理流體凝結成液態。
仍在本揭露案的另一實施例中，揭露一種退火基板之方法。方法包括將基板裝載至處理腔室的處理區域中；將處理流體流動通過氣體導管至處理區域中；及將氣體導管及處理區域中的處理流體維持在高於處理流體的凝結點的溫度。
本揭露案的實施例關於用於退火一或更多半導體基板的裝置及方法。基板可在單一腔室內以單一基板或批量的基板而退火。在退火期間，基板在高壓高溫下暴露至處理流體。當處理一或更多基板時，處理流體從氣體面板流動通過溫度控制的流體迴路而至腔室中。處理流體藉由耦合至流體迴路的一或更多加熱器，而維持在高於處理流體的凝結點的溫度。流體迴路耦合至凝結器，其中在退火完成之後處理流體凝結成液態。在流體迴路上的加熱器使用來自溫度量測的資訊而控制，溫度量測透過與流體迴路不同部分接合的溫度感測器來獲得。顯示於第1圖中且在此處說明的批量處理腔室100，以及顯示於第2圖中且在此處說明的單一基板處理腔室200，可利用為以高溫實行高壓退火處理之目的。
第1圖為批量處理腔室100的簡化的前剖面視圖，用於在高溫下進行高壓退火處理。批量處理腔室100具有主體110，該主體具有外部表面112及內部表面113而包覆內部容積115。在諸如第1圖的某些實施例中，主體110具有環狀剖面，但在其他實施例中，主體110的剖面可為矩形或任何閉合的形狀。主體110的外部表面112可以抗腐蝕鋼（CRS）製成，例如但非限於不銹鋼。外部表面112可選地以熱隔絕層覆蓋，而避免熱從批量處理腔室100耗損至外側環境中。主體110的內部表面113可以基於鎳的鋼合金製成或覆蓋，而展現高的抗腐蝕性，例如但非限於HASTELLOY®
、ICONEL®
及MONEL®
。可選地，主體110可由基於鎳的鋼合金製成。
批量處理腔室100具有門120，配置成將內部容積115密封包覆在主體110之中，使得當門120開啟時基板可傳送進出內部容積115。利用高壓封口122以在處理期間將門120密封至主體110。高壓封口122可以高溫聚合物製成，例如但非限於全氟彈性體（perflouroelastomer）。冷卻通道124佈置在門120或主體110中，鄰接於高壓封口122，以便維持高壓封口122低於高壓封口122的最高自我操作溫度。例如但非限於鈍氣、介電質及高性能熱傳送流體的冷卻劑可在冷卻通道124之中循環。冷卻劑在冷卻通道124之中的流動藉由控制器180，透過從溫度感測器116或流動感測器（未顯示）所接收的回饋而控制。
抗對流面板142可放置在門120及卡匣130之間。抗對流面板142將內部容積115分隔成其中放置卡匣130的熱處理區域102，及靠近門120的較冷區域104。抗對流面板142通常為金屬板，以與腔室主體110相同的材料製成。抗對流面板142可耦合至門120、卡匣130或其他適合的結構。抗對流面板142可包括面向卡匣130的面144，而配置成降低從放置卡匣130的區域至靠近門120的主體110的區域傳送的熱量。面144可足夠大以抑制熱處理區域及較冷區域102、104之間的對流。面144亦可具有拋光的表面或熱反射塗佈。抗對流面板142造成腔室主體110結合較冷區域104的部分被遮蔽且維持低於腔室主體110結合熱處理區域102的部分的溫度。因此，靠近門120且與腔室主體110結合較冷區域104的部分接觸的封口122較不易於因為超過其最大操作溫度而故障。
批量處理腔室100具有穿過主體110形成的通口117。通口117流體連接至溫度控制的流體迴路190。流體迴路190連接氣體面板150、凝結器160及通口117。流體迴路190具有氣體導管192、源導管157、入口隔絕閥155、排氣導管163及出口隔絕閥165。一或更多加熱器152、154、158、196、164、166與流體迴路190的不同部分接合。一或更多溫度感測器151、153、119、167及169與流體迴路190的不同部分接合，以獲得溫度量測且提供溫度量測資訊至控制器180。
氣體導管192在一端透過通口117流體連接至內部容積115。氣體導管192具有四個部分，包括腔室導管118、T形導管194、入口導管159及出口導管161。T形導管194具有三個端：第一端連接至入口導管159、第二端連接至出口導管161且第三端連接至腔室導管118。腔室導管118透過通口117流體連接至內部容積115。入口導管159透過入口隔絕閥155流體連接至源導管157。出口導管161透過出口隔絕閥165流體連接至排氣導管163。源導管157流體耦合至氣體面板150。排氣導管163流體耦合至凝結器160。
腔室導管118與加熱器158接合。T形導管194、入口導管159及出口導管161與加熱器196接合。源導管157與加熱器152接合。入口隔絕閥155與加熱器154接合。出口隔絕閥165與加熱器164接合。排氣導管163與加熱器166接合。加熱器152、154、158、196、164及166配置成將流動通過流體導管190的處理流體維持在高於處理流體的凝結點的溫度。舉例而言，加熱器152、154、158、196、164及166可配置成將流動通過流體導管190的處理流體維持在一溫度下，此溫度將處理流體維持為乾蒸氣或過熱蒸氣。加熱器152、154、158、196、164及166可選地以熱隔絕層覆蓋，以避免熱耗損至外側環境中。加熱器152、154、158、196、164及166可為燈、電阻加熱元件、用於流動傳送流體的流體導管或其他適合的加熱設備。在一個實施例中，加熱器為電阻條帶，而纏繞在流體迴路的元件四周。加熱器152、154、158、196、164及166個別耦合至功率源145。在一個實施例中，加熱器152、154、158、196、164及166之各者可獨立地控制。
溫度感測器151與源導管157接合，且配置成量測源導管157的溫度。溫度感測器153與入口隔絕閥155接合，且配置成量測入口隔絕閥155的溫度。溫度感測器119與腔室導管118接合，且配置成量測腔室導管118的溫度。溫度讀取設備156接收且顯示來自溫度感測器151、153及119的溫度量測。溫度感測器167與出口隔絕閥165接合，且配置成量測出口隔絕閥165的溫度。溫度感測器169與排氣導管163接合，且配置成量測排氣導管163的溫度。溫度讀取設備162接收且顯示來自溫度感測器167及169的溫度量測。溫度讀取設備156及162將溫度量測資訊發送至控制器180。感測器151、153、119、167及169可為非接觸式感測器，例如紅外線感測器，或為接觸式感測器，例如熱電偶。
入口隔絕閥155及出口隔絕閥165為截止閥。當入口隔絕閥155開啟時，出口隔絕閥165關閉，使得處理流體流動通過源導管157進入氣體導管192及內部容積115中，避免處理流體流動至凝結器160中。另一方面，當出口隔絕閥165開啟時，入口隔絕閥155關閉，使得氣態產物從內部容積115移除，且流動通過排氣導管163且至凝結器160中，避免氣態產物流動至氣體面板150中。
氣體面板150配置成提供受壓的處理流體至源導管157中，用於通過氣體導管192傳送至內部容積115中。如第3圖中所顯示，氣體面板150包括處理流體入口310、可選的鈍氣入口320、清潔氣體入口340及共同出口導管357。處理流體入口310流體連接至流體源（未顯示）。流體源可提供加熱至氣態且利用作為處理流體的水或其他適合的流體。處理流體入口310藉由導管312、314及隔絕閥315流體連接至蒸發器350。隔絕閥315具有第一（即，關閉的）狀態而避免來自流體源的流動進入蒸發器350。隔絕閥315具有第二（即，開啟的）狀態而允許來自流體源的流動進入蒸發器350。隔絕閥315亦配置有或利用質量流量計，以調節流動至蒸發器350中處理流體的量。蒸發器350配置成將處理流體轉變成氣態。在一個範例中，蒸發器350將水轉變成蒸氣。在一個範例中，蒸發器350將水轉變成乾蒸氣或過熱蒸氣。
蒸發器350藉由導管352流體連接至共同入口導管354。蒸發器350及共同入口導管354亦藉由導管332流體連接至壓力安全閥330。壓力安全閥330配置成釋放導管352中的多餘壓力，且在本領域中大致為已知的。
可選的鈍氣入口320配置成從壓力控制氣源（未顯示）提供壓力控制氣體，而用以控制遞送通過共同入口導管354的處理流體的壓力。藉由氣源提供的壓力控制氣體可為反應氣體或鈍氣，例如但非限於氮氣、氬氣及類似者，或其他適合的氣體。鈍氣入口320藉由隔絕閥325及導管322、324流體連接至共同入口導管354。隔絕閥325具有第一（即，關閉的）狀態而避免來自壓力控制氣源的流動透過導管324進入共同入口導管354。隔絕閥325具有第二（即，開啟的）狀態而允許來自壓力控制氣源的流動透過導管324進入共同入口導管354。隔絕閥325亦配置有或利用質量流量計，以調節流動至共同入口導管354中壓力控制氣體的量。
共同入口導管354藉由閥355及導管356流體連接至共同出口導管357。閥355可配置為隔絕閥，以選擇性地隔絕蒸發器350及鈍氣入口320遠離流體迴路190。共同出口導管357流體連接至源導管157，此源導管157將氣體面板150耦合至入口隔絕閥155。在另一範例中，閥355可配置作為流體控制閥，以選擇性地控制蒸發器350及鈍氣入口320從流體迴路190流至腔室主體110的內部容積155中的處理流體的量。流體控制閥的範例包括針閥、節流閥及調變閥等等。
清潔氣體入口340亦透過共同出口導管357耦合至源導管157。清潔氣體入口340耦合至清潔氣體的源（未顯示）。清潔氣體可為鈍氣，例如但非限於氮氣、空氣、氬氣及類似者。當需要時，清潔氣體可用以從共同出口導管357及流體迴路190移除處理流體的殘留物。清潔氣體入口340藉由隔絕閥345流體連接至共同出口導管357。清潔氣體入口340藉由導管342流體連接至隔絕閥345。隔絕閥345配置成選擇性地隔絕清潔氣體入口340遠離共同出口導管357。隔絕閥345藉由導管344流體連接至共同出口導管357。
在某些實施例中，隔絕閥315、325、345及355為截止閥。隔絕閥315、325、345及355的操作藉由控制器180來控制。引入內部容積115的處理流體的壓力藉由耦合至主體110的壓力感測器114監控。因為流體迴路190連續耦合至內部容積115，所以壓力感測器114亦可用以決定流體迴路190之中的壓力。在流體迴路190及內部容積115具有佈置於其之間的隔絕閥，或者經配置使得預期具有顯著變化的壓力的實施例中，流體迴路190及內部容積115之各者可配備有分別的壓力感測器114。
凝結器160流體耦合至冷卻流體源（未顯示），且配置成凝結離開內部容積115通過氣體導管192的氣態處理流體。在凝結器160中的相態變化從內部容積115及流體迴路190拉引處理流體，而最小化清潔氣體的需求。可選地，離開凝結器160的凝結的處理流體可透過隔絕閥175路由通過熱交換器170。熱交換器170配置成進一步冷卻凝結的處理流體，使得能夠更輕易管理處理流體。凝結器160藉由凝結器導管168流體連接至隔絕閥175。熱交換器170藉由熱交換器導管172耦合至隔絕閥175。幫浦176藉由幫浦導管174流體連接至熱交換器170，且從熱交換器170汲取液化的處理流體至容器，以用於回收、重新使用或丟棄。
一或更多加熱器140佈置於主體110上，且配置成加熱批量處理腔室100的主體110。在某些實施例中，加熱器140如第1圖中所顯示佈置於主體110的外部表面112上。加熱器140之各者可為電阻線圈、燈、陶瓷加熱器、基於石墨的碳纖維複合物（CFC）加熱器、不銹鋼加熱器或鋁加熱器。加熱器140藉由功率源145供電。至加熱器140的功率藉由控制器180而透過從溫度感測器116接收的回饋來控制。溫度感測器116耦合至主體110且監控主體110的溫度。在一個範例中，加熱器140將主體110維持在高於佈置於內部容積155中處理流體的凝結點的溫度。
一或更多加熱器146佈置於主體110中，且配置成加熱在批量處理腔室100的內部容積115中佈置於卡匣130中的基板135。加熱器146之各者可為電阻線圈、燈、陶瓷加熱器、基於石墨的碳纖維複合物（CFC）加熱器、不銹鋼加熱器或鋁加熱器。在第1圖所描繪的實施例中，加熱器146為電阻加熱器。加熱器146藉由功率源145供電。至加熱器146的功率藉由控制器180而透過從溫度感測器（未顯示）接收的回饋來控制。溫度感測器可佈置在主體110中且監控內部容積115的溫度。在一個範例中，加熱器146可操作以在批量處理腔室100的內部容積115的熱處理區域102中將佈置於卡匣130中的基板135維持在高於攝氏300度的溫度，例如介於攝氏300及約450度之間，或甚至例如介於攝氏300及約500度之間。
因為加熱器146將內部容積155的熱處理區域102大致維持在顯著高於流體迴路190的溫度，所以離開流體迴路190至熱處理區域102中的乾蒸氣變成過熱。過熱的乾蒸氣有利地將不會在熱處理區域102之中凝結，則避免流體凝結在處理腔室100之中經處理的基板135上。
耦合至致動器（未顯示）的卡匣130移動進出內部容積115。卡匣130具有頂部表面132、底部表面134及壁136。卡匣130的壁136具有複數個基板儲存槽138。各個基板儲存槽138沿著卡匣130的壁136均勻地間隔開來。各個基板儲存槽138配置成在其中保持基板135。卡匣130可具有多達五十個基板儲存槽138用於保持基板135。卡匣130對傳輸複數個基板135進出批量處理腔室100，以及對在內部容積115中處理複數個基板135兩者提供有效率的運輸。
控制器180包括中央處理單元（CPU）182、記憶體184及支援電路186。CPU 182可為在工業設定中可使用的通用電腦處理器的任何形式。記憶體184可為隨機存取記憶體、唯讀記憶體、軟碟或硬碟驅動，或數位儲存的其他形式。支援電路186通常耦合至CPU 182，且可包括快取、時鐘電路、輸入/輸出系統、電源供應器及類似者。
控制器180控制批量處理腔室100的各種部件的操作。控制器180控制氣體面板150、凝結器160、幫浦176、入口隔絕閥155、出口隔絕閥165及功率源145的操作。控制器180亦通訊連接至溫度感測器116、壓力感測器114、冷卻通道124及溫度讀取設備156及162。控制器180接收選擇用於處理基板的處理流體的類型作為輸入。一旦藉由控制器180接收處理流體的類型之後，控制器180決定將處理流體維持在氣態中的目標壓力及溫度範圍。控制器180使用來自溫度感測器116、151、153、119、167、169及壓力感測器114的資訊，以控制加熱器140、152、154、158、196、164及166的操作及提供於內部容積115及流體迴路190之中的壓力。藉由加熱器供應的控制的溫度及藉由壓力控制氣體提供的壓力用以將佈置於流體迴路190及內部容積115中的處理流體維持在大於所施加壓力及溫度的處理流體的凝結點的溫度。控制器180使用來自壓力感測器114的資訊以在氣體面板150中控制隔絕閥315、325、345及355的操作，以優選地供應處理流體至流體迴路190中，且將處理流體維持在低於所供應溫度下處理流體的凝結壓力的壓力。內部容積115以及流體迴路190的溫度及壓力因此被維持，使得處理流體保持在氣態。
應考量處理流體根據處理需求而選擇，用於在批量處理腔室100中所欲的退火基板。處理流體可包含含氧及/或含氮氣體，例如氧氣、蒸氣、水、過氧化氫及/或氨氣。對含氧及/或含氮氣體之替代或額外地，處理流體可包含含矽氣體，例如但非限於有機矽、原矽酸四烷基酯氣體及二矽氧烷氣體。在某些實施例中，處理流體可為蒸氣或乾蒸氣，在介於約5巴及約80巴之間的壓力下，且溫度可維持在介於攝氏約150度及攝氏約250度之間，或甚至高達攝氏500度。此舉確保乾蒸氣不會在內部容積115及流體迴路190中凝結成水，且額外地允許乾蒸氣在熱處理區域102之中變成過熱乾蒸氣，其中基板135暴露至過熱乾蒸氣用於處理。
第1A圖為另一批量處理腔室106的部分的部分剖面視圖，圖示對溫度控制的流體迴路190A
之連接。批量處理腔室106實質上與上述的批量處理腔室106相同，除了取代第1圖中所顯示將溫度控制的流體迴路190耦合至凝結器160及氣體面板150兩者的單一通口117之外，第1A圖的批量處理腔室106包括將內部容積115耦合至溫度控制的流體迴路190A
的氣體面板150的第一通口117A
，及將內部容積115耦合至溫度控制的流體迴路190A
的凝結器160的第二通口117B
。
溫度控制的流體迴路190A
實質上與溫度控制的流體迴路190相同，具有標記A及B標示耦合至氣體面板側（A）及凝結器側（B）的元件。不同於溫度控制的流體迴路190，其中將溫度控制的流體迴路190之中的凝結器160及氣體面板150透過共同腔室導管118流體耦合至腔室主體110的內部容積115，而溫度控制的流體迴路190A
流體隔絕凝結器160及氣體面板150，且透過分開的腔室導管118A,B
，透過分開描繪的通口117A,B
將凝結器160及氣體面板150分開地耦合至腔室主體110的內部容積115。
第2圖為單一基板處理腔室200的前剖面視圖，用於在高溫下單一基板的高壓退火處理。單一基板處理腔室200具有主體210，而具有包覆內部容積215的外部表面212及內部表面213。在某些實施例中，例如在第2圖中，主體210具有環狀剖面，而在其他實施例中，主體210的剖面可為矩形或任何閉合的形狀。主體210的外部表面212可以抗腐蝕鋼（CRS）製成，例如但非限於不銹鋼。一或更多熱護罩225佈置於主體210的內部表面213上，而避免熱從單一基板處理腔室200耗損至外側環境中。主體210的內部表面以及熱護罩225可以基於鎳的鋼合金製成，而展現高的抗腐蝕性，例如但非限於HASTELLOY®
、ICONEL®
及MONEL®
。
基板支撐件230佈置在內部容積215之中。基板支撐件230具有支架234及藉由支架234保持的基板支撐構件232。支架234通過透過腔室主體210所形成的管道222。桿件239通過透過腔室主體210所形成的第二管道223而連接至致動器238。桿件239耦合至板235，板235具有容納基板支撐件230的支架234的孔洞236。舉升銷237連接至基板支撐構件232。致動器238致動桿件239，使得板235向上或向下移動以連接或脫離舉升銷237。隨著舉升銷237的上升或下降，基板支撐構件232在腔室200的內部容積215之中上升或下降。基板支撐構件232具有安裝於其中心之中的電阻加熱元件231。功率源233配置成對電阻加熱元件231供電。功率源233以及致動器238的操作藉由控制器280控制。
單一基板處理腔室200在主體210上具有開口211，一或更多基板220可透過此開口211裝載及卸載進出佈置於內部容積215中的基板支撐件230。開口211在主體210上形成孔道221。狹縫閥228配置成密封地關閉孔道221，使得僅當狹縫閥228開啟時可進入開口211及內部容積215。高壓封口227用以將狹縫閥228密封至主體210，以便密封內部容積215用於處理。高壓封口227可以聚合物製成，例如含氟聚合物，例如但非限於全氟彈性體及聚四氟乙烯（PTFE）。高壓封口227可進一步包括彈簧構件，用於偏移封口以改善密封性能。冷卻通道224佈置在孔道221上鄰接至高壓封口227，以便在處理期間維持高壓封口227低於高壓封口227的最大安全操作溫度。來自冷卻流體源226的冷卻劑，例如但非限於鈍氣、介電質及高性能熱傳送流體，可在冷卻通道224之中循環。從冷卻流體源226的冷卻劑的流動藉由控制器280透過從溫度感測器216或流體感測器（未顯示）所接收的回饋來控制。環狀熱阻圈229形成於孔道221四周，以避免當狹縫閥228開啟時，從內部容積215的熱流動通過開口211。
單一基板處理腔室200具有通過主體210的通口217，而流體連通至流體迴路290，連接氣體面板250、凝結器260及通口217。流體迴路290具有實質上類似於流體迴路190的部件，且具有實質上類似於流體迴路190之方式的功能。流體迴路290具有氣體導管292、源導管257、入口隔絕閥255、排氣導管263及出口隔絕閥265。數個加熱器296、258、252、254、264、266與流體迴路290的不同部分接合。數個溫度感測器251、253、219、267及269亦放置在流體迴路290的不同部分處，以擷取溫度量測且發送資訊至控制器280。控制器280使用溫度量測資訊以控制加熱器252、254、258、296、264及266的操作，使得流體迴路290的溫度維持在高於佈置於流體迴路290及內部容積215中的處理流體的凝結點的溫度。
氣體面板250及壓力感測器214在本質及功能上實質上類似於氣體面板150及壓力感測器114。凝結器260在本質及功能上實質上類似於凝結器160。幫浦270在本質及功能上實質上類似於幫浦176。一或更多加熱器240佈置於主體210上，且配置成在單一基板處理腔室200之中加熱內部容積215。加熱器240亦在本質及功能上類似於批量處理腔室100中所使用的加熱器140。
控制器280控制單一基板處理腔室200的操作。控制器280控制氣體面板250、凝結器260、幫浦270、入口隔絕閥255、出口隔絕閥265、功率源233及245的操作。控制器280亦通訊連接至溫度感測器216、壓力感測器214、致動器238、冷卻流體源226及溫度讀取設備256及262。控制器280在本質及功能上實質上類似於批量處理腔室100中所使用的控制器180。
批量處理腔室100提供便利的處理腔室以在高壓下使用處理流體於高溫下實行一或更多基板的退火的方法。加熱器140供電以加熱處理腔室100且將內部容積115維持在高於處理流體的凝結點的溫度。同時，加熱器152、154、158、196、164及166供電以加熱流體迴路190。
複數個基板135裝載在待放置於批量處理腔室100中的卡匣130上。開啟批量處理腔室100的門120且將卡匣130移動至內部容積115中。接著關閉門120以將基板135密封在處理腔室100之中。一旦門120被關閉之後，封口122確保從內部容積115不會有滲漏。
藉由氣體面板150提供處理流體至處理腔室100內側所界定的內部容積115中。開啟入口隔絕閥155以允許處理流體流動通過源導管157及氣體導管192至內部容積115中。此時出口隔絕閥165保持關閉。對處理流體所施加的壓力可逐漸的增加。當足夠的處理流體的量存在於內部容積115中時，關閉入口隔絕閥155。或者，在處理基板135的同時可連續流動處理流體通過內部容積115。
在處理期間，內部容積115以及流體迴路190維持在一溫度及壓力下，使得處理流體維持在氣態。內部容積115以及流體迴路190的溫度維持在大於處理流體所施加的壓力的凝結點的溫度。內部容積115以及流體迴路190維持在小於處理流體所施加的溫度的凝結壓力的壓力。
當基板135在處理條件下透過暴露至處理流體而已達到所欲效果時，處理完成。接著開啟出口隔絕閥165以從內部容積115流動處理流體通過氣體導管192及排氣導管163至凝結器160中。處理流體在凝結器160中凝結成液態。可選的熱交換器170可進一步冷卻液態處理流體以緩和流體的處置。凝結的處理流體接著藉由幫浦176移除。當凝結的處理流體被移除時，關閉出口隔絕閥165。當出口隔絕閥165對凝結器160開啟的同時加熱器140、152、154、158、196、164及166將流體迴路之中的處理流體維持在氣態，以避免流體迴路之中的凝結。接著開啟批量處理腔室100的門120以從內部容積115移除基板135。
單一基板處理腔室200與批量處理腔室100以實質上相同的方式操作。單一基板處理腔室200用以退火放置於基板支撐件230上的單一基板220。開啟狹縫閥228以裝載基板220通過孔道221至內部容積215中的基板支撐件230。當傳送至內部容積215的同時，加熱器252、254、258、296、264及266將流體迴路之中的處理流體維持在氣態。
第4圖根據本揭露案的一個實施例，為在處理腔室中退火一或更多基板的方法400的方塊圖。方法400藉由將一或更多基板裝載至處理腔室的處理區域中而在方塊410處開始。舉例而言，可將單一基板裝載在單一基板處理腔室中佈置的基板支撐件上。或者，複數個基板可裝載在放置於批量處理腔室中的卡匣上。
於方塊420處，處理流體流動通過氣體導管至單一基板處理腔室或批量處理腔室之中的處理區域中。在某些實施例中，處理流體可為在高壓下的處理流體。在退火處理期間，單一基板或複數個基板暴露至高溫下的處理流體。在完成處理之後，從處理區域移除處理流體通過氣體導管，且藉由凝結器凝結成液態。凝結的處理流體接續藉由幫浦移除。
在方塊430處，氣體導管中的處理流體維持在高於處理流體的凝結點的溫度。氣體導管耦合至一或更多加熱器，此一或更多加熱器配置成將流動通過氣體導管的處理流體維持在高於處理流體的凝結點的溫度，使得處理流體保留在氣態。在某些實施例中，加熱器可包含藉由功率源供電的電阻加熱元件。氣體導管具有一或更多溫度感測器，可操作以量測氣體導管的溫度。來自氣體導管的溫度量測發送至控制器，此控制器使用資訊以控制氣體導管上加熱器的操作。
經選擇以用於操縱的處理流體的類型，輸入至控制器的使用者界面中或透過另一通道提供至控制器的基板。控制器使用來自溫度及壓力感測器的資訊，以控制與流體迴路及腔室主體的不同部分接合的加熱器的操作，且將流體迴路及處理區域中存在的處理流體維持在大於對所感測壓力的處理流體的凝結點的溫度。控制器亦使用來自耦合至腔室主體的溫度及壓力感測器的資訊，以控制處理流體及來自氣體面板的壓力控制氣體的流動至流體迴路中，且將處理流體維持在小於對所感測溫度的處理流體的凝結壓力的壓力。處理區域以及流體迴路的溫度及壓力因此經維持，使得處理流體保留在氣態。在一個範例中，壓力維持在約5巴及約35巴之間，同時溫度維持在攝氏約150度及攝氏約250度之間，使得處理流體主要為蒸氣的形式而保留在氣態。
在處理腔室100、200中使用的流體迴路190、290提供將處理流體的溫度控制且維持在高於流動通過流體迴路190、290至高壓退火腔室中的處理流體的凝結點的溫度的優點。耦合至流體迴路190、290的不同部分的數個加熱器及溫度感測器幫助控制器180、280控制且維持供應至處理腔室100、200中的流體迴路190、290及內部容積115、215的熱。結果，避免處理流體的凝結且將處理流體維持在氣態。
批量處理腔室100允許複數個基板在相同條件下同時以批量的方式退火，因此降低處理各個基板的成本。另一方面，單一基板處理腔室200允許更有效率的基板處理，因此對待退火的各個基板提供優越的基板溫度控制。再者，單一基板處理腔室200可立即與真空叢集處理工具整合，因此提供有效率的基板處理及設備整合所需的處理腔室的整合。
儘管以上導向本揭露案的特定實施例，應理解此等實施例僅為原理的說明及本發明的應用。因此應理解可對圖示實施例作成各種修改以達成其他實施例，而不會悖離本發明的精神及範疇，此等藉由隨附申請專利範圍界定。
100‧‧‧批量處理腔室
110‧‧‧主體
112‧‧‧外部表面
113‧‧‧內部表面
114、214‧‧‧壓力感測器
115、215‧‧‧處理區域
116、216‧‧‧溫度感測器
117、217‧‧‧通口
118、218‧‧‧腔室導管
119、219‧‧‧溫度感測器
120、220‧‧‧門
122、227‧‧‧高壓封口
124、224‧‧‧冷卻通道
130‧‧‧卡匣
132‧‧‧頂部表面
134‧‧‧底部表面
135‧‧‧基板
136‧‧‧壁
138‧‧‧基板儲存槽
140、240‧‧‧加熱器
150、250‧‧‧氣體面板
151、251‧‧‧溫度感測器
152、252‧‧‧加熱器
153、253‧‧‧溫度感測器
154、254‧‧‧加熱器
155、255‧‧‧入口隔絕閥
156、256‧‧‧溫度讀取設備
157、257‧‧‧源導管
158、258‧‧‧加熱器
159、259‧‧‧入口導管
160、260‧‧‧凝結器
161、261‧‧‧出口導管
162、262‧‧‧溫度讀取設備
163、263‧‧‧排氣導管
164、264‧‧‧加熱器
165、265‧‧‧出口隔絕閥
166、266‧‧‧加熱器
167、267‧‧‧溫度感測器
168、268‧‧‧幫浦導管
169、269‧‧‧溫度感測器
170、270‧‧‧幫浦
180、280‧‧‧控制器
182、282‧‧‧CPU
184、284‧‧‧記憶體
186、286‧‧‧支援電路
190、290‧‧‧流體迴路
192、292‧‧‧氣體導管
194、294‧‧‧T形導管
196、296‧‧‧加熱器
200‧‧‧單一基板處理腔室
210‧‧‧主體
211‧‧‧開口
212‧‧‧外部表面
213‧‧‧內部表面
220‧‧‧基板
221‧‧‧孔道
222‧‧‧管道
223‧‧‧第二管道
225‧‧‧熱護罩
226‧‧‧冷卻流體源
228‧‧‧狹縫閥
229‧‧‧熱阻圈
230‧‧‧基板支撐件
231‧‧‧電阻加熱元件
232‧‧‧基板支撐構件
233‧‧‧功率源
234‧‧‧支架
235‧‧‧板
236‧‧‧孔洞
237‧‧‧舉升銷
238‧‧‧致動器
239‧‧‧桿件
300‧‧‧方法
310‧‧‧方塊
320‧‧‧方塊
330‧‧‧方塊
以上本揭露案所載的特徵以此方式而能夠更詳細理解，而以上簡要概述的本揭露案的更特定說明，可藉由參考實施例而獲得，某些實施例圖示於隨附圖式中。然而，應理解隨附圖式僅圖示範例實施例，且因此不應考慮為範疇之限制，而認可其他均等效果的實施例。
第1圖為批量處理腔室的簡化的前剖面視圖，用於退火一或更多基板。
第1A圖為批量處理腔室的部分的部分剖面視圖，圖示連接至溫度控制的流體迴路。
第2圖為單一基板處理腔室的簡化的前剖面視圖，用於退火單一基板。
第3圖為氣體面板的簡化的概要圖，在批量處理腔室及單一基板腔室中使用。
第4圖為在處理腔室中退火一或更多基板的方法的方塊圖。
為了促進理解，儘可能地使用相同的元件符號代表共通圖式中相同的元件。應考量一個實施例的元件及特徵可有益地併入其他實施例中而無須進一步說明。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
Claims (15)
- 一種用於在高壓高溫下退火基板之批量處理腔室，包含： 一腔室主體，包覆一內部容積，該內部容積配置成容納佈置於其中的複數個基板；一氣體面板，配置成提供一處理流體至該內部容積中；一凝結器，流體連接至該內部容積，該凝結器配置成將該處理流體凝結成液態；及一溫度控制的流體迴路，配置成將該處理流體維持在高於該處理流體的一凝結點的一溫度，該溫度控制的流體迴路包含：一氣體導管，在一第一端流體耦合至該腔室主體上的一通口、在一第二端流體耦合至該氣體面板且在一第三端流體耦合至該凝結器。
- 如請求項1所述之批量處理腔室，其中該溫度控制的流體迴路進一步包含： 一源導管，在一第一端流體耦合至該氣體面板，且在一第二端藉由一入口隔絕閥流體耦合至該氣體導管；一排氣導管，在一第一端流體耦合至該凝結器，且在一第二端藉由一出口隔絕閥流體耦合至該氣體導管；及一或更多加熱器，耦合至該源導管、該排氣導管及該氣體導管之各者，該一或更多加熱器配置成將流動通過該源導管、該排氣導管及該氣體導管的該處理流體維持在高於流動通過該溫度控制的流體迴路的該處理流體的一凝結點的一溫度。
- 如請求項1所述之批量處理腔室，該腔室進一步包含： 一或更多溫度感測器，可操作以量測該氣體導管的一溫度。
- 如請求項1所述之批量處理腔室，進一步包含： 一冷卻通道，佈置於鄰接一門，該門配置成密封關閉該腔室主體。
- 如請求項1所述之批量處理腔室，其中該腔室主體以基於鎳的超合金製作。
- 如請求項1所述之批量處理腔室，進一步包含： 一抗對流板，佈置在該腔室主體中，且將該內部容積分隔成一熱處理區域及一較冷處理區域，該基板在該熱處理區域中處理，且該較冷處理區域靠近一腔室主體門。
- 一種在一處理腔室中退火基板之方法，該方法包含以下步驟： 將複數個基板裝載至該處理腔室的一內部容積中；將一處理流體流動通過一氣體導管至該內部容積中；及將該氣體導管及該內部容積中的該處理流體維持在高於該處理流體的一凝結點的一溫度。
- 如請求項7所述之方法，進一步包含以下步驟： 將該內部容積中的該處理流體維持在高於該氣體導管中該處理流體的一溫度。
- 如請求項7所述之方法，進一步包含以下步驟： 將該氣體導管中的該處理流體維持在高於攝氏150度的一溫度。
- 如請求項7所述之方法，進一步包含以下步驟： 將該等基板維持在介於攝氏約350度及500度之間的一溫度。
- 如請求項7所述之方法，進一步包含以下步驟： 將該內部容積中的該處理流體維持在高於約5巴的一壓力。
- 如請求項7所述之方法，進一步包含以下步驟： 將該內部容積中的該處理流體維持在介於約5巴及80巴之間的一壓力。
- 如請求項7所述之方法，其中流動該處理流體至該內部容積中的步驟進一步包含以下步驟： 將乾蒸氣流至該處理腔室中。
- 如請求項13所述之方法，進一步包含以下步驟： 將該等基板暴露至過熱乾蒸氣。
- 如請求項7所述之方法，其中流動該處理流體至該內部容積中的步驟進一步包含以下步驟： 流動以下至少一者至該處理腔室中：一含氧含氮氣體、一含矽氣體。
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|---|---|
| CN111095513B (zh) | 2023-10-31 |
| TWI869031B (zh) | 2025-01-01 |
| US11462417B2 (en) | 2022-10-04 |
| JP6947914B2 (ja) | 2021-10-13 |
| US11469113B2 (en) | 2022-10-11 |
| WO2019036157A1 (en) | 2019-02-21 |
| TW202410209A (zh) | 2024-03-01 |
| CN111095513A (zh) | 2020-05-01 |
| TW202507853A (zh) | 2025-02-16 |
| US20200234973A1 (en) | 2020-07-23 |
| US10636677B2 (en) | 2020-04-28 |
| KR102405723B1 (ko) | 2022-06-07 |
| JP2020532106A (ja) | 2020-11-05 |
| TWI835739B (zh) | 2024-03-21 |
| US20190057879A1 (en) | 2019-02-21 |
| US20200243345A1 (en) | 2020-07-30 |
| KR20200032269A (ko) | 2020-03-25 |
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