[go: up one dir, main page]

TW200715570A - Robust transistors with fluorine treatment - Google Patents

Robust transistors with fluorine treatment

Info

Publication number
TW200715570A
TW200715570A TW095124990A TW95124990A TW200715570A TW 200715570 A TW200715570 A TW 200715570A TW 095124990 A TW095124990 A TW 095124990A TW 95124990 A TW95124990 A TW 95124990A TW 200715570 A TW200715570 A TW 200715570A
Authority
TW
Taiwan
Prior art keywords
epitaxial layers
semiconductor device
operating
fluorine treatment
substrate
Prior art date
Application number
TW095124990A
Other languages
English (en)
Inventor
Yi-Feng Wu
Primit Parikh
Marcia Moore
Tim Wisleder
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of TW200715570A publication Critical patent/TW200715570A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates

Landscapes

  • Junction Field-Effect Transistors (AREA)
TW095124990A 2005-09-07 2006-07-07 Robust transistors with fluorine treatment TW200715570A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US71505705P 2005-09-07 2005-09-07

Publications (1)

Publication Number Publication Date
TW200715570A true TW200715570A (en) 2007-04-16

Family

ID=39136403

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095124990A TW200715570A (en) 2005-09-07 2006-07-07 Robust transistors with fluorine treatment

Country Status (5)

Country Link
US (3) US7638818B2 (zh)
EP (3) EP1938385B1 (zh)
JP (1) JP5501618B2 (zh)
TW (1) TW200715570A (zh)
WO (1) WO2008027027A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI618244B (zh) * 2017-06-06 2018-03-11 黃知澍 N-face III族/氮化物磊晶結構及其主動元件與其積體化之極性反轉製作方法

Families Citing this family (173)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2454269C (en) * 2001-07-24 2015-07-07 Primit Parikh Insulating gate algan/gan hemt
US7417266B1 (en) 2004-06-10 2008-08-26 Qspeed Semiconductor Inc. MOSFET having a JFET embedded as a body diode
JP4968067B2 (ja) * 2005-06-10 2012-07-04 日本電気株式会社 電界効果トランジスタ
US8183595B2 (en) * 2005-07-29 2012-05-22 International Rectifier Corporation Normally off III-nitride semiconductor device having a programmable gate
EP1938385B1 (en) * 2005-09-07 2014-12-03 Cree, Inc. Transistors with fluorine treatment
WO2007059220A2 (en) * 2005-11-15 2007-05-24 The Regents Of The University Of California Methods to shape the electric field in electron devices, passivate dislocations and point defects, and enhance the luminescence efficiency of optical devices
US8044432B2 (en) * 2005-11-29 2011-10-25 The Hong Kong University Of Science And Technology Low density drain HEMTs
US7932539B2 (en) * 2005-11-29 2011-04-26 The Hong Kong University Of Science And Technology Enhancement-mode III-N devices, circuits, and methods
US7972915B2 (en) * 2005-11-29 2011-07-05 The Hong Kong University Of Science And Technology Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HFETs
JP4989085B2 (ja) * 2006-02-24 2012-08-01 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
JP5307973B2 (ja) * 2006-02-24 2013-10-02 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
JP5065616B2 (ja) * 2006-04-21 2012-11-07 株式会社東芝 窒化物半導体素子
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
WO2008101989A1 (de) * 2007-02-22 2008-08-28 Forschungsverbund Berlin E.V. Halbleiterbauelement und verfahren zu dessen herstellung
US8786072B2 (en) * 2007-02-27 2014-07-22 International Rectifier Corporation Semiconductor package
US20080203433A1 (en) * 2007-02-27 2008-08-28 Sanken Electric Co., Ltd. High electron mobility transistor and method of forming the same
US9147644B2 (en) * 2008-02-26 2015-09-29 International Rectifier Corporation Semiconductor device and passive component integration in a semiconductor package
US7939853B2 (en) * 2007-03-20 2011-05-10 Power Integrations, Inc. Termination and contact structures for a high voltage GaN-based heterojunction transistor
US8212290B2 (en) 2007-03-23 2012-07-03 Cree, Inc. High temperature performance capable gallium nitride transistor
JP4691060B2 (ja) * 2007-03-23 2011-06-01 古河電気工業株式会社 ＧａＮ系半導体素子
JP2008277604A (ja) * 2007-05-01 2008-11-13 Oki Electric Ind Co Ltd 電界効果トランジスタ
JP5306341B2 (ja) * 2007-07-04 2013-10-02 コーニンクレッカ フィリップス エヌ ヴェ パターン化された層を基板上に形成する方法
EP2168162B1 (en) * 2007-07-09 2016-02-24 Freescale Semiconductor, Inc. Hetero-structure field effect transistor, integrated circuit including a hetero-structure field effect transistor and method for manufacturing a hetero-structure field effect transistor
US8502323B2 (en) * 2007-08-03 2013-08-06 The Hong Kong University Of Science And Technology Reliable normally-off III-nitride active device structures, and related methods and systems
WO2009038809A1 (en) * 2007-09-20 2009-03-26 International Rectifier Corporation Enhancement mode iii-nitride semiconductor device with reduced electric field between the gate and the drain
FR2924271B1 (fr) * 2007-11-27 2010-09-03 Picogiga Internat Dispositif electronique a champ electrique controle
JP5416399B2 (ja) * 2008-02-13 2014-02-12 株式会社東芝 半導体装置
JP5671100B2 (ja) * 2008-02-13 2015-02-18 株式会社東芝 半導体装置
US8497527B2 (en) * 2008-03-12 2013-07-30 Sensor Electronic Technology, Inc. Device having active region with lower electron concentration
US8076699B2 (en) * 2008-04-02 2011-12-13 The Hong Kong Univ. Of Science And Technology Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
US8519438B2 (en) 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8871024B2 (en) * 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20090301388A1 (en) * 2008-06-05 2009-12-10 Soraa Inc. Capsule for high pressure processing and method of use for supercritical fluids
US8097081B2 (en) 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
WO2011044554A1 (en) 2009-10-09 2011-04-14 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
US7985986B2 (en) * 2008-07-31 2011-07-26 Cree, Inc. Normally-off semiconductor devices
US8979999B2 (en) 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8430958B2 (en) * 2008-08-07 2013-04-30 Soraa, Inc. Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
US8021481B2 (en) 2008-08-07 2011-09-20 Soraa, Inc. Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
US10036099B2 (en) 2008-08-07 2018-07-31 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US7976630B2 (en) 2008-09-11 2011-07-12 Soraa, Inc. Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
US20100295088A1 (en) * 2008-10-02 2010-11-25 Soraa, Inc. Textured-surface light emitting diode and method of manufacture
US8354679B1 (en) 2008-10-02 2013-01-15 Soraa, Inc. Microcavity light emitting diode method of manufacture
US20100084687A1 (en) * 2008-10-03 2010-04-08 The Hong Kong University Of Science And Technology Aluminum gallium nitride/gallium nitride high electron mobility transistors
US8455894B1 (en) 2008-10-17 2013-06-04 Soraa, Inc. Photonic-crystal light emitting diode and method of manufacture
US7898004B2 (en) 2008-12-10 2011-03-01 Transphorm Inc. Semiconductor heterostructure diodes
US8878230B2 (en) * 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US8461071B2 (en) * 2008-12-12 2013-06-11 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US20110100291A1 (en) * 2009-01-29 2011-05-05 Soraa, Inc. Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules
JP2010186943A (ja) * 2009-02-13 2010-08-26 Sharp Corp 窒化物半導体装置
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US8754496B2 (en) * 2009-04-14 2014-06-17 Triquint Semiconductor, Inc. Field effect transistor having a plurality of field plates
US8008977B2 (en) * 2009-04-14 2011-08-30 Triquint Semiconductor, Inc. Field-plated transistor including feedback resistor
JP5472293B2 (ja) * 2009-04-20 2014-04-16 富士通株式会社 化合物半導体装置及びその製造方法
US8742459B2 (en) 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
US8791499B1 (en) 2009-05-27 2014-07-29 Soraa, Inc. GaN containing optical devices and method with ESD stability
US8728884B1 (en) 2009-07-28 2014-05-20 Hrl Laboratories, Llc Enhancement mode normally-off gallium nitride heterostructure field effect transistor
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
US8390000B2 (en) 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
DE112010003700T5 (de) 2009-09-18 2013-02-28 Soraa, Inc. Power-leuchtdiode und verfahren mit stromdichtebetrieb
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
KR20110032845A (ko) * 2009-09-24 2011-03-30 삼성전자주식회사 전력 전자소자 및 그 제조방법
US8435347B2 (en) 2009-09-29 2013-05-07 Soraa, Inc. High pressure apparatus with stackable rings
JP5037594B2 (ja) * 2009-12-08 2012-09-26 シャープ株式会社 電界効果トランジスタ
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
US8740413B1 (en) 2010-02-03 2014-06-03 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US20110186874A1 (en) * 2010-02-03 2011-08-04 Soraa, Inc. White Light Apparatus and Method
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
US20120007102A1 (en) * 2010-07-08 2012-01-12 Soraa, Inc. High Voltage Device and Method for Optical Devices
JP5655424B2 (ja) * 2010-08-09 2015-01-21 サンケン電気株式会社 化合物半導体装置
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
TWI421947B (zh) * 2010-11-12 2014-01-01 國立交通大學 氮化鎵電晶體的製作方法
JP5707903B2 (ja) * 2010-12-02 2015-04-30 富士通株式会社 化合物半導体装置及びその製造方法
JP5786323B2 (ja) * 2010-12-03 2015-09-30 富士通株式会社 化合物半導体装置の製造方法
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
JP5857415B2 (ja) * 2011-02-24 2016-02-10 富士通株式会社 半導体装置の製造方法
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
US8716141B2 (en) 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
US9631620B2 (en) * 2011-03-11 2017-04-25 Johnson Controls Technology Company Stationary volume ratio adjustment mechanism
CN102184943A (zh) * 2011-04-18 2011-09-14 电子科技大学 一种增强型AlGaN/GaN HEMT器件及其制备方法
US8492185B1 (en) 2011-07-14 2013-07-23 Soraa, Inc. Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
JP5782947B2 (ja) * 2011-09-15 2015-09-24 富士通株式会社 半導体装置及びその製造方法、電源装置、高周波増幅器
JP5765171B2 (ja) * 2011-09-29 2015-08-19 富士通株式会社 化合物半導体装置の製造方法
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
US9694158B2 (en) 2011-10-21 2017-07-04 Ahmad Mohamad Slim Torque for incrementally advancing a catheter during right heart catheterization
US10029955B1 (en) 2011-10-24 2018-07-24 Slt Technologies, Inc. Capsule for high pressure, high temperature processing of materials and methods of use
US20130105817A1 (en) 2011-10-26 2013-05-02 Triquint Semiconductor, Inc. High electron mobility transistor structure and method
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
US8633094B2 (en) 2011-12-01 2014-01-21 Power Integrations, Inc. GaN high voltage HFET with passivation plus gate dielectric multilayer structure
US8940620B2 (en) 2011-12-15 2015-01-27 Power Integrations, Inc. Composite wafer for fabrication of semiconductor devices
US8482104B2 (en) 2012-01-09 2013-07-09 Soraa, Inc. Method for growth of indium-containing nitride films
KR101869045B1 (ko) * 2012-01-11 2018-06-19 삼성전자 주식회사 고전자이동도 트랜지스터 및 그 제조방법
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
US9269876B2 (en) 2012-03-06 2016-02-23 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
JP5995309B2 (ja) * 2012-03-28 2016-09-21 住友電工デバイス・イノベーション株式会社 半導体装置及びその製造方法
JP5715588B2 (ja) * 2012-03-28 2015-05-07 株式会社東芝 半導体装置およびその製造方法
JP5701805B2 (ja) * 2012-03-28 2015-04-15 株式会社東芝 窒化物半導体ショットキダイオードの製造方法
WO2013155108A1 (en) 2012-04-09 2013-10-17 Transphorm Inc. N-polar iii-nitride transistors
US20130328061A1 (en) * 2012-06-07 2013-12-12 Hrl Laboratories, Llc. Normally-off gallium nitride transistor with insulating gate and method of making the same
US8975664B2 (en) * 2012-06-27 2015-03-10 Triquint Semiconductor, Inc. Group III-nitride transistor using a regrown structure
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
US8971368B1 (en) 2012-08-16 2015-03-03 Soraa Laser Diode, Inc. Laser devices having a gallium and nitrogen containing semipolar surface orientation
WO2014043187A1 (en) * 2012-09-11 2014-03-20 University Of Florida Research Foundation, Incorporated High electron mobility transistors having improved reliability
US20140077266A1 (en) * 2012-09-14 2014-03-20 Power Integrations, Inc. Heterostructure Transistor with Multiple Gate Dielectric Layers
JP5899093B2 (ja) * 2012-09-18 2016-04-06 三菱電機株式会社 半導体装置の製造方法
US9099490B2 (en) * 2012-09-28 2015-08-04 Intel Corporation Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US8802471B1 (en) 2012-12-21 2014-08-12 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
JP6522521B2 (ja) 2013-02-15 2019-05-29 トランスフォーム インコーポレーテッド 半導体デバイスの電極及びその製造方法
US8928037B2 (en) 2013-02-28 2015-01-06 Power Integrations, Inc. Heterostructure power transistor with AlSiN passivation layer
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9245993B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
JP6179158B2 (ja) 2013-03-27 2017-08-16 三菱電機株式会社 トランジスタの製造方法、増幅器の製造方法
US9443737B2 (en) * 2013-04-03 2016-09-13 Texas Instruments Incorporated Method of forming metal contacts in the barrier layer of a group III-N HEMT
JP6111821B2 (ja) * 2013-04-25 2017-04-12 三菱電機株式会社 電界効果トランジスタ
US9704959B2 (en) 2013-05-21 2017-07-11 Massachusetts Institute Of Technology Enhancement-mode transistors with increased threshold voltage
US9231094B2 (en) 2013-05-21 2016-01-05 Globalfoundries Inc. Elemental semiconductor material contact for high electron mobility transistor
US9276077B2 (en) 2013-05-21 2016-03-01 Globalfoundries Inc. Contact metallurgy for self-aligned high electron mobility transistor
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9443938B2 (en) 2013-07-19 2016-09-13 Transphorm Inc. III-nitride transistor including a p-type depleting layer
JP6299117B2 (ja) 2013-08-30 2018-03-28 三菱電機株式会社 窒化物半導体デバイスの製造方法、バーンイン装置
KR102100928B1 (ko) * 2013-10-17 2020-05-15 삼성전자주식회사 고전자 이동도 트랜지스터
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
KR102163725B1 (ko) * 2013-12-03 2020-10-08 삼성전자주식회사 반도체 소자 및 그 제조방법
US9437724B2 (en) * 2014-04-21 2016-09-06 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
US20150372096A1 (en) * 2014-06-20 2015-12-24 Ishiang Shih High Electron Mobility Transistors and Integrated Circuits with Improved Feature Uniformity and Reduced defects for Microwave and Millimetre Wave Applications
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
CN104282735A (zh) * 2014-09-17 2015-01-14 电子科技大学 一种具有负离子注入钝化层的场效应晶体管
CN104201202B (zh) * 2014-09-17 2017-01-25 电子科技大学 一种具有复合势垒层的氮化镓基异质结场效应管
JP6292104B2 (ja) * 2014-11-17 2018-03-14 三菱電機株式会社 窒化物半導体装置の製造方法
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
US9553155B2 (en) * 2015-02-04 2017-01-24 Infineon Technologies Austria Ag Semiconductor device and method
TWI626742B (zh) 2015-06-18 2018-06-11 台達電子工業股份有限公司 半導體裝置
JP2017092083A (ja) 2015-11-02 2017-05-25 富士通株式会社 化合物半導体装置及びその製造方法
ITUB20155862A1 (it) 2015-11-24 2017-05-24 St Microelectronics Srl Transistore di tipo normalmente spento con ridotta resistenza in stato acceso e relativo metodo di fabbricazione
CN108604597B (zh) 2016-01-15 2021-09-17 创世舫电子有限公司 具有al(1-x)sixo栅极绝缘体的增强模式iii-氮化物器件
TWI762486B (zh) 2016-05-31 2022-05-01 美商創世舫科技有限公司 包含漸變空乏層的三族氮化物裝置
JP2018026431A (ja) 2016-08-09 2018-02-15 株式会社東芝 窒化物半導体装置
JP6885710B2 (ja) * 2016-11-16 2021-06-16 株式会社アドバンテスト 化合物半導体装置およびその製造方法
US10174438B2 (en) 2017-03-30 2019-01-08 Slt Technologies, Inc. Apparatus for high pressure reaction
TWI736600B (zh) 2017-03-31 2021-08-21 聯穎光電股份有限公司 高電子遷移率電晶體
TWI722166B (zh) * 2017-04-10 2021-03-21 聯穎光電股份有限公司 高電子遷移率電晶體
TWI649873B (zh) 2017-07-26 2019-02-01 財團法人工業技術研究院 三族氮化物半導體結構
CN109659361B (zh) 2017-10-12 2022-03-04 电力集成公司 用于异质结器件的栅极堆叠体
TWI661555B (zh) * 2017-12-28 2019-06-01 Nuvoton Technology Corporation 增強型高電子遷移率電晶體元件
CN111092118B (zh) * 2018-10-23 2023-03-24 世界先进积体电路股份有限公司 半导体装置及其制造方法
TWI811394B (zh) * 2019-07-09 2023-08-11 聯華電子股份有限公司 高電子遷移率電晶體及其製作方法
CN112599586B (zh) * 2020-11-24 2022-11-29 上海工程技术大学 一种高可靠性氮化镓基功率器件及制备方法
KR20230110537A (ko) * 2020-12-02 2023-07-24 아나로그 디바이시즈 인코포레이티드 전기적 특성들을 제어하기 위한 전도성 구성요소를 갖는 화합물 반도체 디바이스들
WO2022126353A1 (zh) * 2020-12-15 2022-06-23 华为技术有限公司 高电子迁移率晶体管及其制作方法、芯片和电子设备
KR20230000718A (ko) * 2021-06-25 2023-01-03 삼성전자주식회사 고전자이동도 트랜지스터 및 그 제조 방법
CN114846620B (zh) * 2021-12-31 2023-12-26 英诺赛科(苏州)科技有限公司 半导体器件及其制造方法
US12356650B2 (en) 2021-12-31 2025-07-08 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and method for manufacturing the same
EP4213215A1 (en) * 2022-01-12 2023-07-19 Nexperia B.V. Multi-finger high-electron mobility transistor
CN115588616B (zh) * 2022-12-12 2023-03-28 江苏长晶科技股份有限公司 一种增强型氮化镓高电子迁移率晶体管制造方法及器件
CN120826998A (zh) * 2023-09-20 2025-10-21 株式会社东芝 半导体装置

Family Cites Families (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51129173A (en) 1974-02-01 1976-11-10 Chisso Corp Semi conductor with high voltage proof schottky electrode and it's man uacturing method.
JPS5539636A (en) 1978-09-13 1980-03-19 Nec Corp Composite semiconductor
JPS62136881A (ja) 1985-12-11 1987-06-19 Fujitsu Ltd 半導体装置
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
DE3823347A1 (de) 1988-07-09 1990-01-11 Semikron Elektronik Gmbh Leistungs-halbleiterelement
JP2697111B2 (ja) 1989-04-06 1998-01-14 三菱化学株式会社 ４―アルコキシピラゾール類およびこれを有効成分とする殺虫、殺ダニ剤
US4946547A (en) 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5200022A (en) 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
US5128729A (en) * 1990-11-13 1992-07-07 Motorola, Inc. Complex opto-isolator with improved stand-off voltage stability
US5290393A (en) 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
WO1992016966A1 (en) 1991-03-18 1992-10-01 Boston University A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films
US5192987A (en) 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
US5488237A (en) * 1992-02-14 1996-01-30 Sumitomo Electric Industries, Ltd. Semiconductor device with delta-doped layer in channel region
JPH05326890A (ja) * 1992-05-07 1993-12-10 Nec Corp 出力バッファ回路
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
JPH07283140A (ja) 1994-04-05 1995-10-27 Nippon Telegr & Teleph Corp <Ntt> 活性原子の供給制御方法
JPH07326737A (ja) * 1994-05-31 1995-12-12 Nippon Steel Corp インピーダンス線路、フィルタ素子、遅延素子および半導体装置
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
GB2296373B (en) 1994-12-14 1997-09-10 Toshiba Cambridge Res Center Semiconductor device
JPH08264760A (ja) * 1995-03-23 1996-10-11 Mitsubishi Electric Corp ヘテロ接合電界効果型トランジスタとその製造方法
US5670798A (en) 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
US5739554A (en) 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
JPH09246527A (ja) * 1996-03-08 1997-09-19 Toshiba Corp 半導体装置
JP3449116B2 (ja) 1996-05-16 2003-09-22 ソニー株式会社 半導体装置
JP3376211B2 (ja) 1996-05-29 2003-02-10 株式会社東芝 半導体装置、半導体基板の製造方法及び半導体装置の製造方法
US5920105A (en) * 1996-09-19 1999-07-06 Fujitsu Limited Compound semiconductor field effect transistor having an amorphous gas gate insulation layer
US5930656A (en) 1996-10-21 1999-07-27 Kabushiki Kaisha Toshiba Method of fabricating a compound semiconductor device
JPH10173036A (ja) * 1996-12-11 1998-06-26 Nec Corp 半導体装置および半導体の高抵抗化方法
JPH10189565A (ja) 1996-12-26 1998-07-21 Tokyo Electron Ltd ウエハボート
JPH10326890A (ja) * 1997-03-21 1998-12-08 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JPH10335637A (ja) * 1997-05-30 1998-12-18 Sony Corp ヘテロ接合電界効果トランジスタ
US6316820B1 (en) * 1997-07-25 2001-11-13 Hughes Electronics Corporation Passivation layer and process for semiconductor devices
JP3161516B2 (ja) * 1997-10-03 2001-04-25 日本電気株式会社 半導体装置の製造方法
JP3439111B2 (ja) 1998-03-09 2003-08-25 古河電気工業株式会社 高移動度トランジスタ
JPH11261051A (ja) 1998-03-09 1999-09-24 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
US6316793B1 (en) 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
JP2000068498A (ja) 1998-08-21 2000-03-03 Nippon Telegr & Teleph Corp <Ntt> 絶縁性窒化物膜およびそれを用いた半導体装置
JP3209270B2 (ja) 1999-01-29 2001-09-17 日本電気株式会社 ヘテロ接合電界効果トランジスタ
JP3159198B2 (ja) * 1999-02-19 2001-04-23 住友電気工業株式会社 電界効果トランジスタ
JP4224737B2 (ja) 1999-03-04 2009-02-18 ソニー株式会社 半導体素子
JP2000266117A (ja) 1999-03-15 2000-09-26 Kosuke Nagaya 回転磁気ダンパ
JP3710339B2 (ja) 1999-08-31 2005-10-26 シャープ株式会社 ＧａＮ系化合物半導体発光素子の製造方法
JP2001085670A (ja) 1999-09-14 2001-03-30 Nec Corp 電界効果型トランジスタ及びその製造方法
JP3414678B2 (ja) 1999-09-29 2003-06-09 三容真空工業株式会社 スパッタによる成膜方法とその装置
US6414340B1 (en) * 1999-11-04 2002-07-02 Raytheon Company Field effect transistor and method for making the same
US6586781B2 (en) 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
JP3944341B2 (ja) * 2000-03-28 2007-07-11 株式会社東芝 酸化物エピタキシャル歪格子膜の製造法
JP3708810B2 (ja) 2000-09-01 2005-10-19 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体装置
US6452221B1 (en) * 2000-09-21 2002-09-17 Trw Inc. Enhancement mode device
US6690042B2 (en) * 2000-09-27 2004-02-10 Sensor Electronic Technology, Inc. Metal oxide semiconductor heterostructure field effect transistor
US6548333B2 (en) * 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
US6849882B2 (en) 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
US20020173062A1 (en) 2001-05-17 2002-11-21 Lung-Chien Chen Method for manufacturing GaN-based LED
US6794719B2 (en) 2001-06-28 2004-09-21 Koninklijke Philips Electronics N.V. HV-SOI LDMOS device with integrated diode to improve reliability and avalanche ruggedness
CA2454269C (en) 2001-07-24 2015-07-07 Primit Parikh Insulating gate algan/gan hemt
CA2456662A1 (en) * 2001-08-07 2003-02-20 Jan Kuzmik High electron mobility devices
US6833564B2 (en) 2001-11-02 2004-12-21 Lumileds Lighting U.S., Llc Indium gallium nitride separate confinement heterostructure light emitting devices
JP2003209124A (ja) 2001-11-06 2003-07-25 Sony Corp 電界効果半導体素子の製造方法及び電界効果半導体素子
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
JP3705431B2 (ja) * 2002-03-28 2005-10-12 ユーディナデバイス株式会社 半導体装置及びその製造方法
JP2004055788A (ja) * 2002-07-19 2004-02-19 Sony Corp 半導体装置
US20040021152A1 (en) * 2002-08-05 2004-02-05 Chanh Nguyen Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate
US8089097B2 (en) * 2002-12-27 2012-01-03 Momentive Performance Materials Inc. Homoepitaxial gallium-nitride-based electronic devices and method for producing same
CN100388509C (zh) * 2003-01-29 2008-05-14 株式会社东芝 功率半导体器件
US6933544B2 (en) 2003-01-29 2005-08-23 Kabushiki Kaisha Toshiba Power semiconductor device
US7078743B2 (en) 2003-05-15 2006-07-18 Matsushita Electric Industrial Co., Ltd. Field effect transistor semiconductor device
US7501669B2 (en) * 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
JP2005086171A (ja) 2003-09-11 2005-03-31 Fujitsu Ltd 半導体装置及びその製造方法
US7052942B1 (en) * 2003-09-19 2006-05-30 Rf Micro Devices, Inc. Surface passivation of GaN devices in epitaxial growth chamber
JP4417677B2 (ja) 2003-09-19 2010-02-17 株式会社東芝 電力用半導体装置
US7071498B2 (en) 2003-12-17 2006-07-04 Nitronex Corporation Gallium nitride material devices including an electrode-defining layer and methods of forming the same
US20050133816A1 (en) * 2003-12-19 2005-06-23 Zhaoyang Fan III-nitride quantum-well field effect transistors
US7045404B2 (en) * 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
US7170111B2 (en) * 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
GB2412009B (en) 2004-03-11 2006-01-25 Toshiba Research Europ Limited A semiconductor device and method of its manufacture
US7354532B2 (en) * 2004-04-13 2008-04-08 E.I. Du Pont De Nemours And Company Compositions of electrically conductive polymers and non-polymeric fluorinated organic acids
US7550783B2 (en) * 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7573078B2 (en) * 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
JP2005340417A (ja) * 2004-05-26 2005-12-08 Mitsubishi Electric Corp ヘテロ接合電界効果型半導体装置
JP4682541B2 (ja) 2004-06-15 2011-05-11 豊田合成株式会社 半導体の結晶成長方法
US7842972B2 (en) * 2004-12-01 2010-11-30 Retro Reflective Optics, Llc Low-temperature-grown (LTG) insulated-gate PHEMT device and method
US7161194B2 (en) * 2004-12-06 2007-01-09 Cree, Inc. High power density and/or linearity transistors
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
US7253455B2 (en) * 2005-04-05 2007-08-07 Freescale Semiconductor, Inc. pHEMT with barrier optimized for low temperature operation
US20060226442A1 (en) * 2005-04-07 2006-10-12 An-Ping Zhang GaN-based high electron mobility transistor and method for making the same
JP4968067B2 (ja) 2005-06-10 2012-07-04 日本電気株式会社 電界効果トランジスタ
JP4968068B2 (ja) 2005-06-10 2012-07-04 日本電気株式会社 電界効果トランジスタ
US20070018198A1 (en) * 2005-07-20 2007-01-25 Brandes George R High electron mobility electronic device structures comprising native substrates and methods for making the same
EP1938385B1 (en) 2005-09-07 2014-12-03 Cree, Inc. Transistors with fluorine treatment
US7585329B2 (en) * 2006-11-28 2009-09-08 Depuy Products, Inc. Modular proximal body trial
US8176696B2 (en) * 2007-10-24 2012-05-15 Leblang Dennis William Building construction for forming columns and beams within a wall mold

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI618244B (zh) * 2017-06-06 2018-03-11 黃知澍 N-face III族/氮化物磊晶結構及其主動元件與其積體化之極性反轉製作方法

Also Published As

Publication number Publication date
EP1938385B1 (en) 2014-12-03
US20110220966A1 (en) 2011-09-15
US20100041188A1 (en) 2010-02-18
EP2312635A2 (en) 2011-04-20
EP2312634B1 (en) 2019-12-25
US20070114569A1 (en) 2007-05-24
WO2008027027A3 (en) 2008-05-15
EP1938385A2 (en) 2008-07-02
US7955918B2 (en) 2011-06-07
EP2312635A3 (en) 2011-05-25
US8669589B2 (en) 2014-03-11
EP2312634A2 (en) 2011-04-20
EP2312635B1 (en) 2020-04-01
EP2312634A3 (en) 2011-05-25
WO2008027027A2 (en) 2008-03-06
US7638818B2 (en) 2009-12-29
JP5501618B2 (ja) 2014-05-28
JP2009507396A (ja) 2009-02-19

Similar Documents

Publication Publication Date Title
TW200715570A (en) Robust transistors with fluorine treatment
WO2006011939A3 (en) Methods for forming a transistor
TW200711148A (en) Stressed field effect transistors on hybrid orientation substrate
SG143124A1 (en) Semiconductor devices having pfet with sige gate electrode and embedded sige source/drain regions and methods of making the same
TW200731362A (en) Resolving pattern-loading issues of SiGe stressor
TW200603342A (en) Technique for creating different mechanical stress in different channel regions by forming an etch stop layer having differently modified intrinsic stress
TW200735263A (en) Method for fabricating SOI device
EP2450955A3 (en) Termination and contact structures for a high voltage GaN-based heterojunction transistor
TW200703468A (en) Semiconductor device and method for manufacturing the same
TW200625630A (en) Hybrid substrate technology for high-mobility planar and multiple-gate MOSFETs
JP2012104648A5 (zh)
EP2302668A3 (en) Semiconductor device having tipless epitaxial source/drain regions
WO2011156650A3 (en) Low resistivity tungsten pvd with enhanced ionization and rf power coupling
TW200715566A (en) Display device and method of manufacturing the same
WO2011071598A3 (en) Quantum-well-based semiconductor devices
TW200725756A (en) Method for forming a semiconductor structure and structure thereof
TW200631065A (en) Strained transistor with hybrid-strain inducing layer
TW200633125A (en) Semiconductor device and method of semiconductor device
TW200610067A (en) Thin channel mosfet with source/drain stressors
TW200518343A (en) Structure for and method of fabricating a high-mobility field-effect transistor
TW200644237A (en) High-voltage MOS device
TW200701455A (en) Impurity co-implantation to improve transistor performance
CN103515238B (zh) Nmos晶体管及形成方法、cmos结构及形成方法
TW200729500A (en) Asymmetric semiconductor device and fabrication method
TW200943532A (en) Semiconductor device and fabrication process thereof