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GB1079870A - A method of melting a rod of crystalline material zone-by-zone - Google Patents

A method of melting a rod of crystalline material zone-by-zone

Info

Publication number
GB1079870A
GB1079870A GB30903/66A GB3090366A GB1079870A GB 1079870 A GB1079870 A GB 1079870A GB 30903/66 A GB30903/66 A GB 30903/66A GB 3090366 A GB3090366 A GB 3090366A GB 1079870 A GB1079870 A GB 1079870A
Authority
GB
United Kingdom
Prior art keywords
rod
zone
melting
crystalline material
rotated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30903/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of GB1079870A publication Critical patent/GB1079870A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/912—Replenishing liquid precursor, other than a moving zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

A monocrystalline silicon rod is produced from a supply rod of half its diameter by a floating zone-melting process using a pan-cake induction coil in which the recrystallized rod is rotated and shifted laterally to and fro with respect to the supply rod and coil at a speed of 5-20 cycles/min. The recrystallized rod may be withdrawn upwards or downwards from the molten zone. The supply rod may also be rotated. The lateral shift path may be rectilinear or part of a circle.
GB30903/66A 1964-02-01 1966-07-08 A method of melting a rod of crystalline material zone-by-zone Expired GB1079870A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DES89317A DE1218404B (en) 1964-02-01 1964-02-01 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
NL656506040A NL138766B (en) 1964-02-01 1965-05-12 METHOD OF ENLARGING THE CROSS SECTION OF A MONOCRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING.
DES98115A DE1275032B (en) 1964-02-01 1965-07-10 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DES98712A DE1263698B (en) 1964-02-01 1965-08-07 Process for crucible-free zone melting

Publications (1)

Publication Number Publication Date
GB1079870A true GB1079870A (en) 1967-08-16

Family

ID=27437570

Family Applications (3)

Application Number Title Priority Date Filing Date
GB3442/65A Expired GB1044592A (en) 1964-02-01 1965-01-26 A method of melting a rod of crystalline material zone by zone
GB30903/66A Expired GB1079870A (en) 1964-02-01 1966-07-08 A method of melting a rod of crystalline material zone-by-zone
GB31122/66A Expired GB1081600A (en) 1964-02-01 1966-07-11 A method of melting a rod of crystalline material zone-by-zone

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB3442/65A Expired GB1044592A (en) 1964-02-01 1965-01-26 A method of melting a rod of crystalline material zone by zone

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB31122/66A Expired GB1081600A (en) 1964-02-01 1966-07-11 A method of melting a rod of crystalline material zone-by-zone

Country Status (9)

Country Link
US (3) US3477811A (en)
BE (3) BE664435A (en)
CH (3) CH413785A (en)
DE (3) DE1218404B (en)
DK (2) DK124458B (en)
FR (1) FR1444259A (en)
GB (3) GB1044592A (en)
NL (3) NL138766B (en)
SE (3) SE309965B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1272886B (en) * 1966-09-24 1968-07-18 Siemens Ag Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DE1544301A1 (en) * 1966-09-28 1970-05-27 Siemens Ag Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DE1619996A1 (en) * 1967-03-18 1971-07-08 Siemens Ag Method for producing a single-crystal rod, in particular from semiconductor material
US3607109A (en) * 1968-01-09 1971-09-21 Emil R Capita Method and means of producing a large diameter single-crystal rod from a polycrystal bar
DE1960088C3 (en) * 1969-11-29 1974-07-25 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for crucible-free zone melting of a crystalline rod
DE2234512C3 (en) * 1972-07-13 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of (reoriented semiconductor single crystal rods with a specific resistance thawing towards the center of the rod
US4002523A (en) * 1973-09-12 1977-01-11 Texas Instruments Incorporated Dislocation-free growth of silicon semiconductor crystals with <110> orientation
US5156211A (en) * 1991-06-10 1992-10-20 Impact Selector, Inc. Remotely adjustable fishing jar and method for using same
JP2820027B2 (en) 1994-05-24 1998-11-05 信越半導体株式会社 Semiconductor single crystal growth method
RU2324017C1 (en) * 2006-08-28 2008-05-10 Федеральное Государственное Унитарное Предприятие "Всероссийский научно-исследовательский институт токов высокой частоты им. В.П. Вологдина" (ФГУП ВНИИТВЧ им. В.П. Вологдина) Process to manufacture silicon hollow monocrystals

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
NL126240C (en) * 1958-02-19
US3036892A (en) * 1958-03-05 1962-05-29 Siemens Ag Production of hyper-pure monocrystal-line rods in continuous operation
US3036812A (en) * 1958-11-19 1962-05-29 Dewrance & Co Butterfly valves
AT223659B (en) * 1960-11-25 1962-10-10 Siemens Ag Process for the production of dislocation-free single crystal silicon by crucible-free zone melting

Also Published As

Publication number Publication date
CH442246A (en) 1967-08-31
NL138766B (en) 1973-05-15
US3414388A (en) 1968-12-03
NL146402B (en) 1975-07-15
NL6506040A (en) 1966-11-14
BE685153A (en) 1967-02-06
DE1275032B (en) 1968-08-14
SE323654B (en) 1970-05-11
DE1218404B (en) 1966-06-08
DK124458B (en) 1972-10-23
BE664435A (en) 1965-11-25
CH413785A (en) 1966-05-31
SE323655B (en) 1970-05-11
US3477811A (en) 1969-11-11
FR1444259A (en) 1966-07-01
SE309965B (en) 1969-04-14
DE1263698B (en) 1968-03-21
DK124459B (en) 1972-10-23
NL6607827A (en) 1967-02-08
CH442245A (en) 1967-08-31
GB1044592A (en) 1966-10-05
NL6605968A (en) 1967-01-11
GB1081600A (en) 1967-08-31
US3658598A (en) 1972-04-25
BE683852A (en) 1967-01-09

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