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GB1045664A - A process for melting a rod of polycrystalline material zone-by-zone - Google Patents

A process for melting a rod of polycrystalline material zone-by-zone

Info

Publication number
GB1045664A
GB1045664A GB26676/65A GB2667665A GB1045664A GB 1045664 A GB1045664 A GB 1045664A GB 26676/65 A GB26676/65 A GB 26676/65A GB 2667665 A GB2667665 A GB 2667665A GB 1045664 A GB1045664 A GB 1045664A
Authority
GB
United Kingdom
Prior art keywords
rod
zone
passed
cylindrical
melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB26676/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Publication of GB1045664A publication Critical patent/GB1045664A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)

Abstract

A thin crystalline seed is joined to the tapered end of a thick polycrystalline rod of silicon by means of a pancake induction coil and a molten zone is passed through the rod from the joint by means of a cylindrical induction coil. The rod is maintained vertical with the tapered end at the top or bottom during the process. The pancake coil may be removed before commencement of zone-melting or kept stationary and open-circuited or connected in parallel with one or more condensers. An incandescent zone may be passed through the rod during return of the cylindrical coil. One or more further molten zones may be passed through the rod, the zones being formed by the cylindrical and/or pancake coils. The diameter of the seed and rod may be 6 and 40 mm respectively.
GB26676/65A 1964-06-23 1965-06-23 A process for melting a rod of polycrystalline material zone-by-zone Expired GB1045664A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES91655A DE1224273B (en) 1964-06-23 1964-06-23 Device for crucible-free zone melting

Publications (1)

Publication Number Publication Date
GB1045664A true GB1045664A (en) 1966-10-12

Family

ID=7516653

Family Applications (1)

Application Number Title Priority Date Filing Date
GB26676/65A Expired GB1045664A (en) 1964-06-23 1965-06-23 A process for melting a rod of polycrystalline material zone-by-zone

Country Status (6)

Country Link
US (1) US3310384A (en)
BE (1) BE665683A (en)
CH (1) CH421902A (en)
DE (1) DE1224273B (en)
GB (1) GB1045664A (en)
NL (1) NL6503268A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3518629A (en) * 1964-02-06 1970-06-30 Computron Corp Recirculating memory timing
DE1519908A1 (en) * 1966-12-30 1970-07-02 Siemens Ag Device for producing a crystalline rod by zone melting without a crucible
US3776703A (en) * 1970-11-30 1973-12-04 Texas Instruments Inc Method of growing 1-0-0 orientation high perfection single crystal silicon by adjusting a focus coil
DE2508369A1 (en) * 1975-02-26 1976-09-02 Siemens Ag PROCESS FOR MANUFACTURING DISC-SHAPED SILICON BODIES, IN PARTICULAR FOR SOLAR CELLS
US5033948A (en) * 1989-04-17 1991-07-23 Sandvik Limited Induction melting of metals without a crucible
US5003551A (en) * 1990-05-22 1991-03-26 Inductotherm Corp. Induction melting of metals without a crucible
US5319670A (en) * 1992-07-24 1994-06-07 The United States Of America As Represented By The United States Department Of Energy Velocity damper for electromagnetically levitated materials

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US2897329A (en) * 1957-09-23 1959-07-28 Sylvania Electric Prod Zone melting apparatus
US3117859A (en) * 1957-12-30 1964-01-14 Westinghouse Electric Corp Zone refining process
US3046100A (en) * 1958-01-20 1962-07-24 Du Pont Zone melting of semiconductive material
US3023091A (en) * 1959-03-02 1962-02-27 Raytheon Co Methods of heating and levitating molten material
US3134700A (en) * 1959-04-22 1964-05-26 Siemens Ag Dislocation removal by a last pass starting at a location displaced from the original seed into the grown crystal
NL251304A (en) * 1959-05-08
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods
GB926487A (en) * 1960-11-25 1963-05-22 Dorman & Smith Ltd Improvements in and relating to electrical fuse assemblies

Also Published As

Publication number Publication date
US3310384A (en) 1967-03-21
DE1224273B (en) 1966-09-08
CH421902A (en) 1966-10-15
NL6503268A (en) 1965-12-24
BE665683A (en) 1965-12-21

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