GB1375132A - - Google Patents
Info
- Publication number
- GB1375132A GB1375132A GB1440973A GB1440973A GB1375132A GB 1375132 A GB1375132 A GB 1375132A GB 1440973 A GB1440973 A GB 1440973A GB 1440973 A GB1440973 A GB 1440973A GB 1375132 A GB1375132 A GB 1375132A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- zone
- iii
- boundary
- central axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000004857 zone melting Methods 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/004—Sight-glasses therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Abstract
1375132 Zone melting SIEMENS AG 26 March 1973 [13 July 1972] 14409/73 Heading BIS A (III)-orientated monocrystalline semiconductor rod having a specific resistance which is lower at the central axis of the rod than at its outer surface is made by the non- crucible zone melting of a semiconductor rod supported substantially vertically at its ends by producing a molten zone in the rod of diameter greater than the rod to be produced by means of an annular inductive heating device surrounding the rod, causing the zone to pass through the rod from a (III)-orientated seed crystal located at one end of the rod at such a speed, e.g. at least 3.5 mm/min., that the boundary between the zone and the recrystallized portion of the rod presents a concave face towards the molten zone such that a (III)-tangent can be drawn to the boundary only at the central axis of the rod. The material of the rod is preferably silicon.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2234512A DE2234512C3 (en) | 1972-07-13 | 1972-07-13 | Process for the production of (reoriented semiconductor single crystal rods with a specific resistance thawing towards the center of the rod |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1375132A true GB1375132A (en) | 1974-11-27 |
Family
ID=5850582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1440973A Expired GB1375132A (en) | 1972-07-13 | 1973-03-26 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3915660A (en) |
| JP (1) | JPS4953372A (en) |
| BE (1) | BE802326A (en) |
| CA (1) | CA1016847A (en) |
| DE (1) | DE2234512C3 (en) |
| DK (1) | DK143457C (en) |
| FR (1) | FR2192870B1 (en) |
| GB (1) | GB1375132A (en) |
| IT (1) | IT992613B (en) |
| NL (1) | NL7305060A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50159967A (en) * | 1974-06-17 | 1975-12-24 | ||
| GB1542868A (en) * | 1975-11-14 | 1979-03-28 | Siemens Ag | Production of phosphorus-doped monocrystalline silicon rods |
| JPS61117200A (en) * | 1984-11-13 | 1986-06-04 | Alps Electric Co Ltd | Tellurium oxide whisker and its production |
| US6452211B1 (en) | 1997-06-10 | 2002-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor thin film and semiconductor device |
| EP1088912A1 (en) * | 1999-09-28 | 2001-04-04 | Forschungsverbund Berlin e.V. | Growth in solution of compound or alloy crystals in a floating zone |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL104644C (en) * | 1959-09-18 | |||
| NL112520C (en) * | 1959-10-19 | |||
| NL301226A (en) * | 1962-12-03 | |||
| DE1218404B (en) * | 1964-02-01 | 1966-06-08 | Siemens Ag | Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod |
| BE684801A (en) * | 1965-08-05 | 1967-01-03 |
-
1972
- 1972-07-13 DE DE2234512A patent/DE2234512C3/en not_active Expired
-
1973
- 1973-03-26 GB GB1440973A patent/GB1375132A/en not_active Expired
- 1973-04-11 NL NL7305060A patent/NL7305060A/xx not_active Application Discontinuation
- 1973-06-27 JP JP48072741A patent/JPS4953372A/ja active Pending
- 1973-07-11 IT IT26455/73A patent/IT992613B/en active
- 1973-07-12 FR FR7325560A patent/FR2192870B1/fr not_active Expired
- 1973-07-12 DK DK387773A patent/DK143457C/en not_active IP Right Cessation
- 1973-07-12 CA CA176,248A patent/CA1016847A/en not_active Expired
- 1973-07-13 US US378943A patent/US3915660A/en not_active Expired - Lifetime
- 1973-07-13 BE BE133466A patent/BE802326A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE2234512C3 (en) | 1979-04-19 |
| DE2234512A1 (en) | 1974-01-24 |
| IT992613B (en) | 1975-09-30 |
| BE802326A (en) | 1973-11-05 |
| US3915660A (en) | 1975-10-28 |
| FR2192870B1 (en) | 1977-12-23 |
| DK143457C (en) | 1981-12-28 |
| NL7305060A (en) | 1974-01-15 |
| DK143457B (en) | 1981-08-24 |
| DE2234512B2 (en) | 1978-08-24 |
| FR2192870A1 (en) | 1974-02-15 |
| CA1016847A (en) | 1977-09-06 |
| JPS4953372A (en) | 1974-05-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |