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GB1013064A - Process for drawing a crystalline semiconductor body from a melt - Google Patents

Process for drawing a crystalline semiconductor body from a melt

Info

Publication number
GB1013064A
GB1013064A GB47394/63A GB4739463A GB1013064A GB 1013064 A GB1013064 A GB 1013064A GB 47394/63 A GB47394/63 A GB 47394/63A GB 4739463 A GB4739463 A GB 4739463A GB 1013064 A GB1013064 A GB 1013064A
Authority
GB
United Kingdom
Prior art keywords
rod
current
melt
zone
dec
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB47394/63A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB1013064A publication Critical patent/GB1013064A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/18—Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,013,064. Zone-melting. SIEMENS & HALSKE A.G. Dec. 2, 1963 [Dec. 3, 1962], No. 47394/63. Heading BIS. In the production of a monocrystalline rod of germanium or silicon by zone-melting or crystal-pulling, a low lattice dislocation (e.g. 5000/cm.<SP>2</SP>) is produced in the rod by passing a current between the growing rod and the solidifying melt, preferably from the melt to the rod. The current density may be 100 A./cm.<SP>2</SP>. An alternating current may be superimposed on the direct current. The rod may have a diameter of 10À5 mm., the speed of pulling may be 2À5 mm./minute, and the pulled rod may be rotated at 60 r.p.m. As shown, a rod 2 is melted by an induction coil 8 to produce a molten zone 3, and a rod I is solidified from molten zone 3. Passage of a current in direction 7 produces a concave solidifying surface 5 which moves in direction 4.
GB47394/63A 1962-12-03 1963-12-02 Process for drawing a crystalline semiconductor body from a melt Expired GB1013064A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES82693A DE1244113B (en) 1962-12-03 1962-12-03 Process for reducing the lattice disturbances in crystals made of semiconductor material

Publications (1)

Publication Number Publication Date
GB1013064A true GB1013064A (en) 1965-12-15

Family

ID=7510532

Family Applications (1)

Application Number Title Priority Date Filing Date
GB47394/63A Expired GB1013064A (en) 1962-12-03 1963-12-02 Process for drawing a crystalline semiconductor body from a melt

Country Status (6)

Country Link
US (1) US3268301A (en)
CH (1) CH406160A (en)
DE (1) DE1244113B (en)
GB (1) GB1013064A (en)
NL (1) NL301226A (en)
SE (1) SE310356B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD370880S (en) 1994-11-08 1996-06-18 The Goodyear Tire & Rubber Company Tread for a tire

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2234512C3 (en) * 1972-07-13 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of (reoriented semiconductor single crystal rods with a specific resistance thawing towards the center of the rod
US4012242A (en) * 1973-11-14 1977-03-15 International Rectifier Corporation Liquid epitaxy technique
FR2358021A1 (en) * 1976-07-09 1978-02-03 Radiotechnique Compelec EPITAXIC DEPOSIT PROCESS OF A SEMICONDUCTOR BY ELECTRIC POLARIZATION OF A LIQUID PHASE

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789039A (en) * 1953-08-25 1957-04-16 Rca Corp Method and apparatus for zone melting
US2792317A (en) * 1954-01-28 1957-05-14 Westinghouse Electric Corp Method of producing multiple p-n junctions
NL105554C (en) * 1955-01-13
US2932562A (en) * 1956-12-27 1960-04-12 Bell Telephone Labor Inc Zone-melting with joule heat
US2970895A (en) * 1956-12-31 1961-02-07 Union Carbide Corp Process for crystalline growth employing collimated electrical energy
GB844813A (en) * 1957-05-01 1960-08-17 Sylvania Electric Prod Zone melting apparatus
US2937216A (en) * 1957-12-30 1960-05-17 Minnesota Mining & Mfg Zone refining apparatus
US3058915A (en) * 1960-01-18 1962-10-16 Westinghouse Electric Corp Crystal growing process
US3152022A (en) * 1962-05-25 1964-10-06 Bell Telephone Labor Inc Epitaxial deposition on the surface of a freshly grown dendrite

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD370880S (en) 1994-11-08 1996-06-18 The Goodyear Tire & Rubber Company Tread for a tire

Also Published As

Publication number Publication date
CH406160A (en) 1966-01-31
SE310356B (en) 1969-04-28
US3268301A (en) 1966-08-23
NL301226A (en)
DE1244113B (en) 1967-07-13

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