CH421911A - Process for crucible-free melt zone treatment of a rod made of crystalline semiconductor material, induction heating coil arrangement for carrying out the process and silicon rod produced by this process - Google Patents
Process for crucible-free melt zone treatment of a rod made of crystalline semiconductor material, induction heating coil arrangement for carrying out the process and silicon rod produced by this processInfo
- Publication number
- CH421911A CH421911A CH11064A CH11064A CH421911A CH 421911 A CH421911 A CH 421911A CH 11064 A CH11064 A CH 11064A CH 11064 A CH11064 A CH 11064A CH 421911 A CH421911 A CH 421911A
- Authority
- CH
- Switzerland
- Prior art keywords
- crucible
- carrying
- semiconductor material
- induction heating
- heating coil
- Prior art date
Links
- 238000000034 method Methods 0.000 title 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000010438 heat treatment Methods 0.000 title 1
- 230000006698 induction Effects 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/22—Furnaces without an endless core
- H05B6/30—Arrangements for remelting or zone melting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Manufacture And Refinement Of Metals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US250148A US3249406A (en) | 1963-01-08 | 1963-01-08 | Necked float zone processing of silicon rod |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH421911A true CH421911A (en) | 1966-10-15 |
Family
ID=22946486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH11064A CH421911A (en) | 1963-01-08 | 1964-01-07 | Process for crucible-free melt zone treatment of a rod made of crystalline semiconductor material, induction heating coil arrangement for carrying out the process and silicon rod produced by this process |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3249406A (en) |
| BE (1) | BE642180A (en) |
| CH (1) | CH421911A (en) |
| DE (1) | DE1195420B (en) |
| GB (2) | GB1022790A (en) |
| NL (2) | NL302045A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1802524B1 (en) * | 1968-10-11 | 1970-06-04 | Siemens Ag | Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod |
| EP3945147A1 (en) * | 2020-07-28 | 2022-02-02 | Novel Crystal Technology, Inc. | Single crystal manufacturing apparatus and method |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3489875A (en) * | 1966-10-27 | 1970-01-13 | Ajax Magnethermic Corp | Apparatus for induction heating of slabs |
| US3424886A (en) * | 1966-10-27 | 1969-01-28 | Ajax Magnethermic Corp | Induction heating |
| US3612806A (en) * | 1970-02-26 | 1971-10-12 | Park Ohio Industries Inc | Inductor for internal heating |
| US3989468A (en) * | 1973-11-22 | 1976-11-02 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| USRE29824E (en) * | 1973-11-22 | 1978-11-07 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| US4045181A (en) * | 1976-12-27 | 1977-08-30 | Monsanto Company | Apparatus for zone refining |
| JP2759604B2 (en) * | 1993-10-21 | 1998-05-28 | 信越半導体株式会社 | Induction heating coil |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL69280C (en) * | 1944-10-18 | |||
| US2481008A (en) * | 1945-06-27 | 1949-09-06 | Induction Heating Corp | Multiturn split inductor |
| US2481071A (en) * | 1945-07-25 | 1949-09-06 | Chrysler Corp | High-frequency induction heating device |
| DE1031893B (en) * | 1952-08-01 | 1958-06-12 | Standard Elektrik Ag | Process for the outer shaping of semiconductor arrangements, in particular for rectifier and amplifier purposes with semiconductors made of germanium or silicon |
| US2972525A (en) * | 1953-02-26 | 1961-02-21 | Siemens Ag | Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance |
| US2825120A (en) * | 1954-05-11 | 1958-03-04 | Eastman Kodak Co | Synthetic filament |
| GB831305A (en) * | 1955-01-11 | 1960-03-30 | Ass Elect Ind | Improvements relating to the refining of heavy metals by zone melting |
| US3002821A (en) * | 1956-10-22 | 1961-10-03 | Texas Instruments Inc | Means for continuous fabrication of graded junction transistors |
| US3046100A (en) * | 1958-01-20 | 1962-07-24 | Du Pont | Zone melting of semiconductive material |
| US3065062A (en) * | 1958-06-03 | 1962-11-20 | Wacker Chemie Gmbh | Process for purifying and recrystallizing metals, non-metals, their compounds or alloys |
| US3023091A (en) * | 1959-03-02 | 1962-02-27 | Raytheon Co | Methods of heating and levitating molten material |
| NL249428A (en) * | 1959-03-16 | |||
| NL108958C (en) * | 1959-05-29 | |||
| US2990259A (en) * | 1959-09-03 | 1961-06-27 | Paul L Moody | Syringe-type single-crystal furnace |
| US3100250A (en) * | 1961-04-07 | 1963-08-06 | Herczog Andrew | Zone melting apparatus |
-
0
- NL NL126241D patent/NL126241C/xx active
- NL NL302045D patent/NL302045A/xx unknown
-
1961
- 1961-08-02 GB GB279/65A patent/GB1022790A/en not_active Expired
-
1963
- 1963-01-08 US US250148A patent/US3249406A/en not_active Expired - Lifetime
- 1963-12-04 GB GB47918/63A patent/GB995399A/en not_active Expired
-
1964
- 1964-01-07 BE BE642180A patent/BE642180A/xx unknown
- 1964-01-07 DE DED43296A patent/DE1195420B/en active Pending
- 1964-01-07 CH CH11064A patent/CH421911A/en unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1802524B1 (en) * | 1968-10-11 | 1970-06-04 | Siemens Ag | Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod |
| EP3945147A1 (en) * | 2020-07-28 | 2022-02-02 | Novel Crystal Technology, Inc. | Single crystal manufacturing apparatus and method |
| US11725299B2 (en) | 2020-07-28 | 2023-08-15 | Novel Crystal Technology, Inc. | Single crystal manufacturing apparatus and method |
| US12163246B2 (en) | 2020-07-28 | 2024-12-10 | Novel Crystal Technology, Inc. | Single crystal manufacturing apparatus and method |
Also Published As
| Publication number | Publication date |
|---|---|
| NL302045A (en) | |
| DE1195420B (en) | 1965-06-24 |
| NL126241C (en) | |
| GB995399A (en) | 1965-06-16 |
| GB1022790A (en) | 1966-03-16 |
| BE642180A (en) | 1964-07-17 |
| US3249406A (en) | 1966-05-03 |
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