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WO2008114588A1 - スパッタリングターゲット、酸化物半導体膜及び半導体デバイス - Google Patents

スパッタリングターゲット、酸化物半導体膜及び半導体デバイス Download PDF

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Publication number
WO2008114588A1
WO2008114588A1 PCT/JP2008/053458 JP2008053458W WO2008114588A1 WO 2008114588 A1 WO2008114588 A1 WO 2008114588A1 JP 2008053458 W JP2008053458 W JP 2008053458W WO 2008114588 A1 WO2008114588 A1 WO 2008114588A1
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WIPO (PCT)
Prior art keywords
sputtering target
semiconductor device
oxide semiconductor
semiconductor film
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/053458
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English (en)
French (fr)
Inventor
Kazuyoshi Inoue
Koki Yano
Masashi Kasami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Original Assignee
Idemitsu Kosan Co Ltd
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39765698&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2008114588(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Priority to US12/532,247 priority Critical patent/US8333913B2/en
Priority to CN200880016174XA priority patent/CN101680081B/zh
Priority to JP2009505113A priority patent/JP5306179B2/ja
Publication of WO2008114588A1 publication Critical patent/WO2008114588A1/ja
Anticipated expiration legal-status Critical
Priority to US13/468,119 priority patent/US8668849B2/en
Ceased legal-status Critical Current

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    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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  • Compositions Of Oxide Ceramics (AREA)

Abstract

　インジウム（Ｉｎ）、及びガドリニウム（Ｇｄ）、ジスプロシウム（Ｄｙ）、ホルミウム（Ｈｏ）、エルビウム（Ｅｒ）及びイッテルビウム（Ｙｂ）から選ばれる元素を少なくとも１種以上を含む酸化物の焼結体からなるスパッタリングターゲットであって、前記酸化物の焼結体が実質的にビックスバイト構造からなるスパッタリングターゲット。
PCT/JP2008/053458 2007-03-20 2008-02-28 スパッタリングターゲット、酸化物半導体膜及び半導体デバイス Ceased WO2008114588A1 (ja)

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Cited By (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010047063A1 (ja) * 2008-10-23 2010-04-29 出光興産株式会社 高純度結晶質酸化インジウム半導体膜を有する薄膜トランジスタ、及びその製造方法
JP2010165999A (ja) * 2009-01-19 2010-07-29 Fujifilm Corp 薄膜トランジスタの製造方法及び電気光学装置の製造方法
JP2010177431A (ja) * 2009-01-29 2010-08-12 Fujifilm Corp 薄膜トランジスタ、多結晶酸化物半導体薄膜の製造方法、及び薄膜トランジスタの製造方法
JP2010219214A (ja) * 2009-03-16 2010-09-30 Idemitsu Kosan Co Ltd 半導体薄膜の製造方法、及び該半導体薄膜を備える薄膜トランジスタ
WO2011061922A1 (ja) * 2009-11-19 2011-05-26 株式会社アルバック 透明導電膜の製造方法、透明導電膜の製造装置、スパッタリングターゲット及び透明導電膜
WO2011077978A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
JP2011176296A (ja) * 2010-01-29 2011-09-08 Semiconductor Energy Lab Co Ltd 半導体装置
JP2011181722A (ja) * 2010-03-02 2011-09-15 Idemitsu Kosan Co Ltd スパッタリングターゲット
US20110240998A1 (en) * 2010-03-30 2011-10-06 Sony Corporation Thin-film transistor, method of manufacturing the same, and display device
JP2011205089A (ja) * 2010-03-05 2011-10-13 Semiconductor Energy Lab Co Ltd 酸化物半導体膜の作製方法、およびトランジスタの作製方法
JP2011249570A (ja) * 2010-05-27 2011-12-08 Idemitsu Kosan Co Ltd 酸化物焼結体、それからなるターゲット及び酸化物半導体薄膜
JP2012012659A (ja) * 2010-06-30 2012-01-19 Idemitsu Kosan Co Ltd スパッタリングターゲット
JP2012031460A (ja) * 2010-07-29 2012-02-16 Sumitomo Metal Mining Co Ltd 酸化物蒸着材と透明導電膜および太陽電池
WO2012029612A1 (en) * 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing semiconductor device
JPWO2010047077A1 (ja) * 2008-10-23 2012-03-22 出光興産株式会社 薄膜トランジスタ及びその製造方法
JP2012129511A (ja) * 2010-11-26 2012-07-05 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2012140706A (ja) * 2010-12-17 2012-07-26 Semiconductor Energy Lab Co Ltd スパッタリングターゲット、スパッタリングターゲットの作製方法および半導体装置の作製方法
JP2012256034A (ja) * 2011-05-13 2012-12-27 Semiconductor Energy Lab Co Ltd Ｅｌ表示装置および電子機器
JP2012256033A (ja) * 2011-05-13 2012-12-27 Semiconductor Energy Lab Co Ltd 表示装置及び電子機器
WO2013035335A1 (ja) * 2011-09-06 2013-03-14 出光興産株式会社 スパッタリングターゲット
JP2013201211A (ja) * 2012-03-23 2013-10-03 Sony Corp 薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器
EP2497111A4 (en) * 2009-11-06 2014-02-12 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
JP2014152353A (ja) * 2013-02-06 2014-08-25 Sumitomo Metal Mining Co Ltd 酸化インジウム系の酸化物焼結体およびその製造方法
US8889477B2 (en) 2011-06-08 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for forming thin film utilizing sputtering target
JP2015072487A (ja) * 2010-02-26 2015-04-16 株式会社半導体エネルギー研究所 液晶表示装置
JP2015109452A (ja) * 2009-11-20 2015-06-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2015135977A (ja) * 2009-03-05 2015-07-27 株式会社半導体エネルギー研究所 半導体装置、表示装置、テレビジョン装置、及び半導体装置の作製方法
JP2015142047A (ja) * 2014-01-29 2015-08-03 出光興産株式会社 積層構造、その製造方法及び薄膜トランジスタ
JP2015165597A (ja) * 2009-12-18 2015-09-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2015178429A1 (ja) * 2014-05-23 2015-11-26 住友金属鉱山株式会社 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜
US9267199B2 (en) 2013-02-28 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target, method for forming oxide film, and transistor
JP2016082198A (ja) * 2014-10-22 2016-05-16 日本放送協会 薄膜トランジスタおよびその製造方法
JP2016167608A (ja) * 2009-10-08 2016-09-15 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法
JP2016178324A (ja) * 2009-12-08 2016-10-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2017120919A (ja) * 2009-09-16 2017-07-06 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP2017168572A (ja) * 2016-03-15 2017-09-21 住友金属鉱山株式会社 酸化物半導体薄膜、酸化物焼結体、薄膜トランジスタ及び表示装置
JP2019003900A (ja) * 2017-06-19 2019-01-10 学校法人 工学院大学 透明導電膜、透明導電膜つき透明基板、透明導電膜つき透明基板の製造方法、タッチパネル
CN112582466A (zh) * 2020-11-20 2021-03-30 华南理工大学 一种金属氧化物半导体及薄膜晶体管与应用
JP2021052191A (ja) * 2009-09-04 2021-04-01 株式会社半導体エネルギー研究所 表示装置

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2477212A1 (de) * 2008-06-09 2012-07-18 Dritte Patentportfolio Beteiligungsgesellschaft mbH & Co. KG Polykristalline Silizium-Dünnschichten hergestellt durch Titan-unterstützten Metall-induzierten Schichtaustausch
JP4838827B2 (ja) * 2008-07-02 2011-12-14 シャープ株式会社 太陽電池モジュールおよびその製造方法
WO2010032422A1 (ja) * 2008-09-19 2010-03-25 出光興産株式会社 酸化物焼結体及びスパッタリングターゲット
KR101930230B1 (ko) * 2009-11-06 2018-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
JP5596963B2 (ja) * 2009-11-19 2014-09-24 出光興産株式会社 スパッタリングターゲット及びそれを用いた薄膜トランジスタ
JP5437825B2 (ja) * 2010-01-15 2014-03-12 出光興産株式会社 Ｉｎ−Ｇａ−Ｏ系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法
WO2011089844A1 (en) 2010-01-24 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP5776192B2 (ja) * 2010-02-16 2015-09-09 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置及びシステム
US8513720B2 (en) * 2010-07-14 2013-08-20 Sharp Laboratories Of America, Inc. Metal oxide semiconductor thin film transistors
JPWO2012032749A1 (ja) * 2010-09-09 2014-01-20 シャープ株式会社 薄膜トランジスタ基板及びその製造方法、表示装置
US9012993B2 (en) 2011-07-22 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103765596B (zh) * 2011-08-11 2018-07-13 出光兴产株式会社 薄膜晶体管
US20140021464A1 (en) * 2012-07-17 2014-01-23 National Chung Cheng University Yttrium-doped Indium Oxide Transparent Conductive Thin-Film Transistor and Method for Making Same
US9885108B2 (en) 2012-08-07 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming sputtering target
JP6107085B2 (ja) * 2012-11-22 2017-04-05 住友金属鉱山株式会社 酸化物半導体薄膜および薄膜トランジスタ
KR20140106977A (ko) * 2013-02-27 2014-09-04 삼성전자주식회사 고성능 금속 산화물 반도체 박막 트랜지스터 및 그 제조방법
US20160343554A1 (en) * 2013-12-27 2016-11-24 Idemitsu Kosan Co., Ltd. Oxide sintered body, method for producing same and sputtering target
TWI675004B (zh) * 2014-02-21 2019-10-21 日商半導體能源研究所股份有限公司 半導體膜、電晶體、半導體裝置、顯示裝置以及電子裝置
TWI660490B (zh) 2014-03-13 2019-05-21 日商半導體能源研究所股份有限公司 攝像裝置
KR20160146665A (ko) * 2014-04-17 2016-12-21 스미토모 긴조쿠 고잔 가부시키가이샤 산화물 소결체, 스퍼터링용 타겟, 및 그것을 이용하여 얻어지는 산화물 반도체 박막
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CN106033731B (zh) 2015-03-13 2019-11-05 联华电子股份有限公司 半导体元件及其制作方法
JP6464042B2 (ja) * 2015-06-23 2019-02-06 株式会社カネカ 透明電極付き基板およびその製造方法
WO2017165197A1 (en) * 2016-03-23 2017-09-28 IQE, plc Epitaxial metal oxide as buffer for epitaxial iii-v layers
CN106086797B (zh) * 2016-07-12 2018-12-11 京东方科技集团股份有限公司 氧化铟锡薄膜及其制备方法、含其的阵列基板、显示装置
JP6426309B2 (ja) 2016-08-31 2018-11-21 出光興産株式会社 新規ガーネット化合物、それを含有する焼結体及びスパッタリングターゲット
US10103282B2 (en) * 2016-09-16 2018-10-16 Nano And Advanced Materials Institute Limited Direct texture transparent conductive oxide served as electrode or intermediate layer for photovoltaic and display applications
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05238807A (ja) * 1992-02-29 1993-09-17 Res Dev Corp Of Japan 透明電気伝導性酸化物
JP2000048966A (ja) * 1998-07-27 2000-02-18 Idemitsu Kosan Co Ltd 有機エレクトロルミネッセンス素子
WO2004105054A1 (ja) * 2003-05-20 2004-12-02 Idemitsu Kosan Co. Ltd. 非晶質透明導電膜、及びその原料スパッタリングターゲット、及び非晶質透明電極基板、及びその製造方法、及び液晶ディスプレイ用カラーフィルタ
WO2005086179A1 (ja) * 2004-03-05 2005-09-15 Idemitsu Kosan Co., Ltd. 半透明・反射電極基板、及びその製造方法、及びその半透過・半反射電極基板を用いた液晶表示装置
JP2005292768A (ja) * 2004-03-09 2005-10-20 Idemitsu Kosan Co Ltd Ｔｆｔ基板及びスパッタリングターゲット及び液晶表示装置及び画素電極及び透明電極及びｔｆｔ基板の製造方法
JP2006173580A (ja) * 2004-11-10 2006-06-29 Canon Inc 電界効果型トランジスタ

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5385400A (en) * 1977-01-06 1978-07-27 Tdk Corp Porcelain composite for voltage non-linear resistor
WO1996001649A1 (en) * 1994-07-07 1996-01-25 Washington University Method of attenuating arterial stenosis
US6056800A (en) 1997-09-15 2000-05-02 Carter, Iv; William J. Method of simultaneously composting anaerobic and aerobic material
EP1111967A1 (en) * 1999-04-30 2001-06-27 Idemitsu Kosan Co., Ltd. Organic electroluminescent device and method of manufacture thereof
WO2003016583A1 (en) * 2001-08-13 2003-02-27 N.V. Bekaert S.A. A sputter target
JP2003298062A (ja) 2002-03-29 2003-10-17 Sharp Corp 薄膜トランジスタ及びその製造方法
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
US20050167681A1 (en) * 2004-02-04 2005-08-04 Samsung Electronics Co., Ltd. Electrode layer, light emitting device including the same, and method of forming the electrode layer
WO2005086180A1 (ja) * 2004-03-09 2005-09-15 Idemitsu Kosan Co., Ltd. 薄膜トランジスタ及び薄膜トランジスタ基板及びこれらの製造方法及びこれらを用いた液晶表示装置及び関連する装置及び方法、並びに、スパッタリングターゲット及びこれを用いて成膜した透明導電膜及び透明電極及び関連する装置及び方法
US7282782B2 (en) * 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
JP5138163B2 (ja) * 2004-11-10 2013-02-06 キヤノン株式会社 電界効果型トランジスタ
JP2007041260A (ja) * 2005-08-03 2007-02-15 Fujifilm Holdings Corp 液晶表示素子
US20070215945A1 (en) * 2006-03-20 2007-09-20 Canon Kabushiki Kaisha Light control device and display
JP5063968B2 (ja) * 2006-09-21 2012-10-31 出光興産株式会社 酸化エルビウム含有酸化物ターゲット
KR20090051170A (ko) * 2006-08-10 2009-05-21 이데미쓰 고산 가부시키가이샤 란타노이드 함유 산화물 타겟
JP5000231B2 (ja) * 2006-08-10 2012-08-15 出光興産株式会社 酸化ガドリニウム含有酸化物ターゲット
US20080107108A1 (en) 2006-11-03 2008-05-08 Nokia Corporation System and method for enabling fast switching between psse channels
TWI478347B (zh) * 2007-02-09 2015-03-21 出光興產股份有限公司 A thin film transistor, a thin film transistor substrate, and an image display device, and an image display device, and a semiconductor device
WO2008099863A1 (ja) * 2007-02-16 2008-08-21 Idemitsu Kosan Co., Ltd. 半導体，半導体装置及び相補型トランジスタ回路装置
US8129714B2 (en) * 2007-02-16 2012-03-06 Idemitsu Kosan Co., Ltd. Semiconductor, semiconductor device, complementary transistor circuit device
US8158974B2 (en) * 2007-03-23 2012-04-17 Idemitsu Kosan Co., Ltd. Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
US8530891B2 (en) * 2007-04-05 2013-09-10 Idemitsu Kosan Co., Ltd Field-effect transistor, and process for producing field-effect transistor
JPWO2008136505A1 (ja) * 2007-05-08 2010-07-29 出光興産株式会社 半導体デバイス及び薄膜トランジスタ、並びに、それらの製造方法
SE531337C2 (sv) 2007-07-03 2009-02-24 Atlas Copco Constr Tools Ab Bränsledriven brytmaskin
KR20090063946A (ko) * 2007-12-14 2009-06-18 삼성코닝정밀유리 주식회사 산화인듐주석 타겟 및 이를 이용한 투명 도전막의 제조방법
JP2011174134A (ja) * 2010-02-24 2011-09-08 Idemitsu Kosan Co Ltd Ｉｎ−Ｇａ−Ｓｎ系酸化物焼結体、ターゲット、酸化物半導体膜、及び半導体素子
KR101774256B1 (ko) * 2010-11-15 2017-09-05 삼성디스플레이 주식회사 산화물 반도체 박막 트랜지스터 및 그 제조 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05238807A (ja) * 1992-02-29 1993-09-17 Res Dev Corp Of Japan 透明電気伝導性酸化物
JP2000048966A (ja) * 1998-07-27 2000-02-18 Idemitsu Kosan Co Ltd 有機エレクトロルミネッセンス素子
WO2004105054A1 (ja) * 2003-05-20 2004-12-02 Idemitsu Kosan Co. Ltd. 非晶質透明導電膜、及びその原料スパッタリングターゲット、及び非晶質透明電極基板、及びその製造方法、及び液晶ディスプレイ用カラーフィルタ
WO2005086179A1 (ja) * 2004-03-05 2005-09-15 Idemitsu Kosan Co., Ltd. 半透明・反射電極基板、及びその製造方法、及びその半透過・半反射電極基板を用いた液晶表示装置
JP2005292768A (ja) * 2004-03-09 2005-10-20 Idemitsu Kosan Co Ltd Ｔｆｔ基板及びスパッタリングターゲット及び液晶表示装置及び画素電極及び透明電極及びｔｆｔ基板の製造方法
JP2006173580A (ja) * 2004-11-10 2006-06-29 Canon Inc 電界効果型トランジスタ

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
"Handotai Yogo Daijiten", 20 March 1999, THE NIKKAN KOGYO SHINBUN, LTD., pages: 795 *
"Tomei Dodenmaku no Gijutsu (2nd revised edition)", 20 December 2006, OHMSHA, LTD., pages: 113 - 119 *
NAKAZAWA H. ET AL.: "The electronic properties of amorphous and crystallized In2O3 films", JOURNAL OF APPLIED PHYSICS, vol. 100, 2006, pages 93706-1 - 93706-8, XP012090432 *

Cited By (106)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2010047077A1 (ja) * 2008-10-23 2012-03-22 出光興産株式会社 薄膜トランジスタ及びその製造方法
WO2010047063A1 (ja) * 2008-10-23 2010-04-29 出光興産株式会社 高純度結晶質酸化インジウム半導体膜を有する薄膜トランジスタ、及びその製造方法
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JPWO2010047063A1 (ja) * 2008-10-23 2012-03-22 出光興産株式会社 高純度結晶質酸化インジウム半導体膜を有する薄膜トランジスタ、及びその製造方法
JP2010165999A (ja) * 2009-01-19 2010-07-29 Fujifilm Corp 薄膜トランジスタの製造方法及び電気光学装置の製造方法
JP2010177431A (ja) * 2009-01-29 2010-08-12 Fujifilm Corp 薄膜トランジスタ、多結晶酸化物半導体薄膜の製造方法、及び薄膜トランジスタの製造方法
US9941393B2 (en) 2009-03-05 2018-04-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US12336303B2 (en) 2009-03-05 2025-06-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10686061B2 (en) 2009-03-05 2020-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11955537B2 (en) 2009-03-05 2024-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2015135977A (ja) * 2009-03-05 2015-07-27 株式会社半導体エネルギー研究所 半導体装置、表示装置、テレビジョン装置、及び半導体装置の作製方法
US10326008B2 (en) 2009-03-05 2019-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2019159339A (ja) * 2009-03-05 2019-09-19 株式会社半導体エネルギー研究所 表示装置
JP2010219214A (ja) * 2009-03-16 2010-09-30 Idemitsu Kosan Co Ltd 半導体薄膜の製造方法、及び該半導体薄膜を備える薄膜トランジスタ
JP6994553B2 (ja) 2009-09-04 2022-01-14 株式会社半導体エネルギー研究所 表示装置
JP2021052191A (ja) * 2009-09-04 2021-04-01 株式会社半導体エネルギー研究所 表示装置
JP2017120919A (ja) * 2009-09-16 2017-07-06 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP2016167608A (ja) * 2009-10-08 2016-09-15 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法
US9331112B2 (en) 2009-11-06 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor layer
EP3051588A1 (en) * 2009-11-06 2016-08-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9773814B2 (en) 2009-11-06 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2497111A4 (en) * 2009-11-06 2014-02-12 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
US8916869B2 (en) 2009-11-06 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor layer
CN102666909A (zh) * 2009-11-19 2012-09-12 株式会社爱发科 透明导电膜的制造方法、透明导电膜的制造装置、溅射靶及透明导电膜
TWI500786B (zh) * 2009-11-19 2015-09-21 Ulvac Inc 透明導電膜之製造方法、透明導電膜之製造裝置、濺鍍靶及透明導電膜
JP5726752B2 (ja) * 2009-11-19 2015-06-03 株式会社アルバック 透明導電膜の製造方法、透明導電膜の製造装置、スパッタリングターゲット及び透明導電膜
WO2011061922A1 (ja) * 2009-11-19 2011-05-26 株式会社アルバック 透明導電膜の製造方法、透明導電膜の製造装置、スパッタリングターゲット及び透明導電膜
CN102666909B (zh) * 2009-11-19 2016-06-22 株式会社爱发科 透明导电膜的制造方法、透明导电膜的制造装置、溅射靶及透明导电膜
US9461181B2 (en) 2009-11-20 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2015109452A (ja) * 2009-11-20 2015-06-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10186619B2 (en) 2009-11-20 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2016178324A (ja) * 2009-12-08 2016-10-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2017135394A (ja) * 2009-12-08 2017-08-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2015165597A (ja) * 2009-12-18 2015-09-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8372664B2 (en) 2009-12-25 2013-02-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
WO2011077978A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8816469B2 (en) 2010-01-29 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising protection circuit with oxide semiconductor
JP2011176296A (ja) * 2010-01-29 2011-09-08 Semiconductor Energy Lab Co Ltd 半導体装置
US9819256B2 (en) 2010-01-29 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8981518B2 (en) 2010-01-29 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015065444A (ja) * 2010-01-29 2015-04-09 株式会社半導体エネルギー研究所 半導体装置
JP2015129975A (ja) * 2010-02-26 2015-07-16 株式会社半導体エネルギー研究所 表示装置
US11927862B2 (en) 2010-02-26 2024-03-12 Semiconductor Energy Laboratory Co., Ltd. Display device having an oxide semiconductor transistor
US10539845B2 (en) 2010-02-26 2020-01-21 Semiconductor Energy Laboratory Co., Ltd. Display device having an oxide semiconductor transistor
US9048325B2 (en) 2010-02-26 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Display device having an oxide semiconductor transistor
US9658506B2 (en) 2010-02-26 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Display device having an oxide semiconductor transistor
JP2015072487A (ja) * 2010-02-26 2015-04-16 株式会社半導体エネルギー研究所 液晶表示装置
JP2011181722A (ja) * 2010-03-02 2011-09-15 Idemitsu Kosan Co Ltd スパッタリングターゲット
JP2011205089A (ja) * 2010-03-05 2011-10-13 Semiconductor Energy Lab Co Ltd 酸化物半導体膜の作製方法、およびトランジスタの作製方法
JP7101739B2 (ja) 2010-03-05 2022-07-15 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法及びトランジスタの作製方法
JP2021044559A (ja) * 2010-03-05 2021-03-18 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法
US10763371B2 (en) 2010-03-30 2020-09-01 Joled Inc. Thin-film transistor, method of manufacturing the same, and display device
US9859437B2 (en) * 2010-03-30 2018-01-02 Joled Inc. Thin-film transistor, method of manufacturing the same, and display device
US20110240998A1 (en) * 2010-03-30 2011-10-06 Sony Corporation Thin-film transistor, method of manufacturing the same, and display device
US9153438B2 (en) 2010-05-27 2015-10-06 Idemitsu Kosan Co., Ltd. Sintered oxide body, target comprising the same, and oxide semiconductor thin film
JP2011249570A (ja) * 2010-05-27 2011-12-08 Idemitsu Kosan Co Ltd 酸化物焼結体、それからなるターゲット及び酸化物半導体薄膜
JP2012012659A (ja) * 2010-06-30 2012-01-19 Idemitsu Kosan Co Ltd スパッタリングターゲット
JP2012031460A (ja) * 2010-07-29 2012-02-16 Sumitomo Metal Mining Co Ltd 酸化物蒸着材と透明導電膜および太陽電池
US8835214B2 (en) 2010-09-03 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing semiconductor device
US20150252465A1 (en) * 2010-09-03 2015-09-10 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing semiconductor device
US8980686B2 (en) 2010-09-03 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing semiconductor device
US9410239B2 (en) * 2010-09-03 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing semiconductor device
JP2012072493A (ja) * 2010-09-03 2012-04-12 Semiconductor Energy Lab Co Ltd スパッタリングターゲットおよび半導体装置の作製方法
WO2012029612A1 (en) * 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing semiconductor device
JP2015187312A (ja) * 2010-09-03 2015-10-29 株式会社半導体エネルギー研究所 スパッタリングターゲット
JP2017103462A (ja) * 2010-09-03 2017-06-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2012129511A (ja) * 2010-11-26 2012-07-05 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US9865696B2 (en) 2010-12-17 2018-01-09 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing the same, and method for manufacturing semiconductor device
JP2012140706A (ja) * 2010-12-17 2012-07-26 Semiconductor Energy Lab Co Ltd スパッタリングターゲット、スパッタリングターゲットの作製方法および半導体装置の作製方法
JP2012256033A (ja) * 2011-05-13 2012-12-27 Semiconductor Energy Lab Co Ltd 表示装置及び電子機器
US9397222B2 (en) 2011-05-13 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP2012256034A (ja) * 2011-05-13 2012-12-27 Semiconductor Energy Lab Co Ltd Ｅｌ表示装置および電子機器
US9954110B2 (en) 2011-05-13 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device
US9382611B2 (en) 2011-06-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing sputtering target, and method for forming thin film
US10889888B2 (en) 2011-06-08 2021-01-12 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing sputtering target, and method for forming thin film
US12252775B2 (en) 2011-06-08 2025-03-18 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing sputtering target, and method for forming thin film
US11066739B2 (en) 2011-06-08 2021-07-20 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing sputtering target, and method for forming thin film
US11959165B2 (en) 2011-06-08 2024-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
US8889477B2 (en) 2011-06-08 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for forming thin film utilizing sputtering target
KR20140057318A (ko) * 2011-09-06 2014-05-12 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟
WO2013035335A1 (ja) * 2011-09-06 2013-03-14 出光興産株式会社 スパッタリングターゲット
JP2013067855A (ja) * 2011-09-06 2013-04-18 Idemitsu Kosan Co Ltd スパッタリングターゲット
KR102075904B1 (ko) * 2011-09-06 2020-02-11 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟
US9767998B2 (en) 2011-09-06 2017-09-19 Idemitsu Kosan Co., Ltd. Sputtering target
JP2013201211A (ja) * 2012-03-23 2013-10-03 Sony Corp 薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器
JP2014152353A (ja) * 2013-02-06 2014-08-25 Sumitomo Metal Mining Co Ltd 酸化インジウム系の酸化物焼結体およびその製造方法
US11139166B2 (en) 2013-02-28 2021-10-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target, method for forming oxide film, and transistor
US11637015B2 (en) 2013-02-28 2023-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target, method for forming oxide film, and transistor
US10522347B2 (en) 2013-02-28 2019-12-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target, method for forming oxide film, and transistor
US11967505B2 (en) 2013-02-28 2024-04-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target, method for forming oxide film, and transistor
US9267199B2 (en) 2013-02-28 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target, method for forming oxide film, and transistor
JP2015142047A (ja) * 2014-01-29 2015-08-03 出光興産株式会社 積層構造、その製造方法及び薄膜トランジスタ
WO2015178429A1 (ja) * 2014-05-23 2015-11-26 住友金属鉱山株式会社 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜
WO2015178430A1 (ja) * 2014-05-23 2015-11-26 住友金属鉱山株式会社 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜
JPWO2015178429A1 (ja) * 2014-05-23 2017-04-20 住友金属鉱山株式会社 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜
JPWO2015178430A1 (ja) * 2014-05-23 2017-04-27 住友金属鉱山株式会社 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜
CN106103380A (zh) * 2014-05-23 2016-11-09 住友金属矿山株式会社 氧化物烧结体、溅射用靶及使用该靶得到的氧化物半导体薄膜
US9941415B2 (en) 2014-05-23 2018-04-10 Sumitomo Metal Mining Co., Ltd. Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target
JP2016082198A (ja) * 2014-10-22 2016-05-16 日本放送協会 薄膜トランジスタおよびその製造方法
JP2017168572A (ja) * 2016-03-15 2017-09-21 住友金属鉱山株式会社 酸化物半導体薄膜、酸化物焼結体、薄膜トランジスタ及び表示装置
JP2019003900A (ja) * 2017-06-19 2019-01-10 学校法人 工学院大学 透明導電膜、透明導電膜つき透明基板、透明導電膜つき透明基板の製造方法、タッチパネル
JP2023550623A (ja) * 2020-11-20 2023-12-04 華南理工大学 金属酸化物半導体及び薄膜トランジスタと応用
CN112582466A (zh) * 2020-11-20 2021-03-30 华南理工大学 一种金属氧化物半导体及薄膜晶体管与应用
JP7628732B2 (ja) 2020-11-20 2025-02-12 華南理工大学 金属酸化物半導体及び薄膜トランジスタと応用
CN112582466B (zh) * 2020-11-20 2025-07-01 华南理工大学 一种金属氧化物半导体及薄膜晶体管与应用

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