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TWI860585B - Decontamination sheet - Google Patents

Decontamination sheet Download PDF

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Publication number
TWI860585B
TWI860585B TW111146676A TW111146676A TWI860585B TW I860585 B TWI860585 B TW I860585B TW 111146676 A TW111146676 A TW 111146676A TW 111146676 A TW111146676 A TW 111146676A TW I860585 B TWI860585 B TW I860585B
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Taiwan
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layer
cleaning
probe
decontamination sheet
cleaning layer
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TW111146676A
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Chinese (zh)
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TW202335862A (en
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陳俊發
黃啟華
李攸軒
許淨雯
楊兆璿
林廷韋
林欽楷
李貞儒
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山太士股份有限公司
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Priority claimed from US17/691,129 external-priority patent/US11865588B2/en
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Publication of TW202335862A publication Critical patent/TW202335862A/en
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Abstract

A decontamination sheet including a release layer or composite plate, an adhesive layer, a substrate layer, a cleaning layer, and a polishing layer is provided. The adhesive layer is disposed on the release layer or composite plate. The substrate layer is disposed on the adhesive layer. The cleaning layer is disposed on the substrate layer. The material of the cleaning layer includes silicone resin having a high degree of crosslinking and organic particles. The polishing layer is disposed on the cleaning layer.

Description

去污片Stain removal tablets

本發明是有關於一種去污片,且特別是有關於一種可用於探針清潔的去污片。The present invention relates to a decontamination sheet, and in particular to a decontamination sheet that can be used for cleaning a probe.

在電子元件的測試中(如:最終測試(final test;FT)或晶圓針測(chip probing;CP),但不限上述),常需藉由探針(probe pin)進行電性的量測。然而,若探針上有雜質;且/或刮痕(scratch)過多或過大,可能會影響電子元件的測試結果。In the testing of electronic components (such as final test (FT) or chip probing (CP), but not limited to the above), it is often necessary to use a probe pin to measure electrical properties. However, if there are impurities on the probe pin; and/or there are too many or too large scratches, it may affect the test results of the electronic component.

本發明提供一種去污片,其可以適於探針的清潔或清除探針上的汙漬。The present invention provides a decontamination sheet, which can be used for cleaning a probe or removing stains on the probe.

本發明的去污片包括離型層或複合材料、黏著層、基材、清潔層以及研磨層。黏著層位於離型層或複合材料上。基材位於黏著層上。清潔層位於基材上。清潔層的材質包括具有高交聯度的有機矽樹脂以及有機粒子。研磨層位於清潔層上。The decontamination sheet of the present invention comprises a release layer or a composite material, an adhesive layer, a substrate, a cleaning layer and an abrasive layer. The adhesive layer is located on the release layer or the composite material. The substrate is located on the adhesive layer. The cleaning layer is located on the substrate. The material of the cleaning layer comprises an organic silicone resin with a high cross-linking degree and organic particles. The abrasive layer is located on the cleaning layer.

在本發明的一實施例中,離型層或複合材料、黏著層、基材、清潔層以及研磨層依序堆疊。In one embodiment of the present invention, a release layer or a composite material, an adhesive layer, a substrate, a cleaning layer, and a polishing layer are stacked in sequence.

在本發明的一實施例中,清潔層的相對兩表面直接接觸基材及研磨層,且在藉由去污片對物件進行清潔的過程中,研磨層為物件接觸去污片的膜層中的第一者。In one embodiment of the present invention, two opposite surfaces of the cleaning layer directly contact the substrate and the polishing layer, and in the process of cleaning the object with the decontamination sheet, the polishing layer is the first film layer of the object to contact the decontamination sheet.

在本發明的一實施例中,具有高交聯度的有機矽樹脂的孔隙率小於3%。In one embodiment of the present invention, the porosity of the organic silicon resin having a high degree of crosslinking is less than 3%.

在本發明的一實施例中,清潔層的邵氏硬度介於40A至80A。In one embodiment of the present invention, the Shore hardness of the cleaning layer is between 40A and 80A.

在本發明的一實施例中,清潔層的楊氏模數介於100 kg/cm 2至250 kg/cm 2In one embodiment of the present invention, the Young's modulus of the cleaning layer is between 100 kg/cm 2 and 250 kg/cm 2 .

在本發明的一實施例中,清潔層的邵氏硬度介於40A至80A,且清潔層的楊氏模數介於100 kg/cm 2至250 kg/cm 2In one embodiment of the present invention, the Shore hardness of the cleaning layer is between 40A and 80A, and the Young's modulus of the cleaning layer is between 100 kg/cm 2 and 250 kg/cm 2 .

在本發明的一實施例中,有機粒子的莫氏硬度小於7。In one embodiment of the present invention, the organic particles have a Mohs hardness of less than 7.

在本發明的一實施例中,有機粒子於具有高交聯度的有機矽樹脂的形成過程中不是作為催化劑。In one embodiment of the present invention, the organic particles do not act as a catalyst in the formation of the organosilicon resin having a high degree of crosslinking.

在本發明的一實施例中,研磨層的材質包括樹脂以及無機粒子。In one embodiment of the present invention, the material of the grinding layer includes resin and inorganic particles.

在本發明的一實施例中,無機粒子的莫氏硬度大於或等於7。In one embodiment of the present invention, the Mohs hardness of the inorganic particles is greater than or equal to 7.

在本發明的一實施例中,研磨層的楊氏模數大於清潔層的楊氏模數。In one embodiment of the present invention, the Young's modulus of the grinding layer is greater than the Young's modulus of the cleaning layer.

基於上述,在本發明的去污片中,由於清潔層可以適於黏貼並包覆探針上的物質,而使去污片可以適於探針的清潔或清除探針上的汙漬,且可以降低於探針上產生刮痕(scratch)的可能或降低所產生的刮痕的尺寸。Based on the above, in the decontamination sheet of the present invention, since the cleaning layer can be suitable for adhering to and covering the material on the probe, the decontamination sheet can be suitable for cleaning the probe or removing the dirt on the probe, and can reduce the possibility of scratches on the probe or reduce the size of the scratches generated.

在附圖中,為了清楚起見,放大或縮小了部分的元件或膜層的尺寸。並且,為求清楚表示,於圖示中可能省略繪示了部分的膜層或構件。In the accompanying drawings, for the sake of clarity, the size of some components or film layers is enlarged or reduced. In addition, for the sake of clarity, some film layers or components may be omitted in the drawings.

本文所使用之方向術語(例如,上、下、右、左、前、後、頂部、底部)僅參看所繪圖式使用且不意欲暗示絕對定向。Directional terms used herein (eg, up, down, right, left, front, back, top, bottom) are used only with reference to the drawings and are not intended to imply an absolute orientation.

在說明書中所表示的數值,可以包括所述數值以及在本領域中具有通常知識者可接受的偏差範圍內的偏差值。上述偏差值可以是於製造過程或量測過程的一個或多個標準偏差(Standard Deviation),或是於計算或換算過程因採用位數的多寡、四捨五入或經由誤差傳遞(Error Propagation)等其他因素所產生的計算誤差。The numerical values indicated in the specification may include the numerical values and deviation values within the deviation range acceptable to persons of ordinary skill in the art. The above deviation values may be one or more standard deviations in the manufacturing process or measurement process, or calculation errors caused by other factors such as the number of digits used, rounding, or error propagation in the calculation or conversion process.

圖1是依照本發明的第一實施例的一種去污片的剖面示意圖。FIG. 1 is a schematic cross-sectional view of a decontamination sheet according to a first embodiment of the present invention.

請參照圖1,去污片100可以包括離型層110、黏著層120、基材130、清潔層140以及研磨層150。離型層110位於黏著層120下(於圖1中的下方)。黏著層120位於基材130下(於圖1中的下方)。清潔層140位於基材130上(於圖1中的上方)。研磨層150位於清潔層140上(於圖1中的上方)。也就是說,黏著層120與清潔層140分別位於基材130的兩相對側。Referring to FIG. 1 , the decontamination sheet 100 may include a release layer 110, an adhesive layer 120, a substrate 130, a cleaning layer 140, and an abrasive layer 150. The release layer 110 is located below the adhesive layer 120 (at the bottom in FIG. 1 ). The adhesive layer 120 is located below the substrate 130 (at the bottom in FIG. 1 ). The cleaning layer 140 is located above the substrate 130 (at the top in FIG. 1 ). The abrasive layer 150 is located above the cleaning layer 140 (at the top in FIG. 1 ). In other words, the adhesive layer 120 and the cleaning layer 140 are located at two opposite sides of the substrate 130, respectively.

在本實施例中,去污片100可以包括層疊設置的離型層110、黏著層120、基材130、清潔層140以及研磨層150。舉例而言,黏著層120的相對兩個表面可以直接接觸離型層110及基材130,基材130的相對兩個表面可以直接接觸黏著層120及清潔層140,清潔層140的相對兩個表面可以直接接觸基材130及研磨層150。In this embodiment, the decontamination sheet 100 may include a release layer 110, an adhesive layer 120, a substrate 130, a cleaning layer 140, and an abrasive layer 150 that are stacked. For example, two opposite surfaces of the adhesive layer 120 may directly contact the release layer 110 and the substrate 130, two opposite surfaces of the substrate 130 may directly contact the adhesive layer 120 and the cleaning layer 140, and two opposite surfaces of the cleaning layer 140 may directly contact the substrate 130 and the abrasive layer 150.

在本實施例中,離型層110可以包括離型膜(release film)或離型紙(release paper),但本發明不限於此。在一實施例中,前述作為離型層110的離型膜的材質可以包括為聚對苯二甲酸乙二酯(polyethylene terephthalate;PET)。在一實施例中,離型膜的厚度可為25微米(micrometer;µm)至175微米,但本發明不限於此。在一實施例中,該離型膜其離型力可為2 gf/25mm ~200 gf/25mm,但本發明不限於此。In this embodiment, the release layer 110 may include a release film or a release paper, but the present invention is not limited thereto. In one embodiment, the material of the release film as the release layer 110 may include polyethylene terephthalate (PET). In one embodiment, the thickness of the release film may be 25 micrometers (µm) to 175 micrometers, but the present invention is not limited thereto. In one embodiment, the release force of the release film may be 2 gf/25mm to 200 gf/25mm, but the present invention is not limited thereto.

在本實施例中,黏著層120的厚度大於或等於10微米,且小於或等於50微米。舉例而言,黏著層120的厚度基本上為25微米。In this embodiment, the thickness of the adhesive layer 120 is greater than or equal to 10 micrometers and less than or equal to 50 micrometers. For example, the thickness of the adhesive layer 120 is substantially 25 micrometers.

若黏著層(如:相同或相似於黏著層120,但厚度不同)的厚度小於10微米,則可能降低黏著層的黏著力。If the thickness of the adhesive layer (eg, the same as or similar to the adhesive layer 120 but different in thickness) is less than 10 microns, the adhesive force of the adhesive layer may be reduced.

若黏著層(如:相同或相似於黏著層120,但厚度不同)的厚度大於50微米,則可能會因為黏著層過厚,而對應地使去污片的整體厚度增厚,而使材料成本增加或影響其他膜層的功能。If the thickness of the adhesive layer (eg, the same or similar to the adhesive layer 120 but different in thickness) is greater than 50 microns, the adhesive layer may be too thick, which may increase the overall thickness of the decontamination sheet, thereby increasing the material cost or affecting the functions of other film layers.

在本實施例中,基材130的厚度大於或等於12微米,且小於或等於200微米。舉例而言,基材130的厚度基本上為100微米至125微米。In this embodiment, the thickness of the substrate 130 is greater than or equal to 12 micrometers and less than or equal to 200 micrometers. For example, the thickness of the substrate 130 is substantially 100 micrometers to 125 micrometers.

若基材(如:相同或相似於基材130,但厚度不同)的厚度小於12微米,則支撐性不佳;且/或,被清潔物(如:圖3C、圖3F、圖4A、或圖4B中的探針91)可能會刺穿厚度小於12微米的基材。If the thickness of the substrate (e.g., the same or similar to substrate 130, but different in thickness) is less than 12 microns, the support is poor; and/or the cleaned object (e.g., probe 91 in FIG. 3C, FIG. 3F, FIG. 4A, or FIG. 4B) may pierce the substrate with a thickness less than 12 microns.

若基材(如:相同或相似於基材130,但厚度不同)的厚度大於200微米,則可能會使包括厚度大於200微米的基材的去污片的整體厚度增厚,而使材料成本增加或影響其他膜層的功能。If the thickness of the substrate (e.g., the same or similar to substrate 130, but different in thickness) is greater than 200 microns, the overall thickness of the decontamination sheet including the substrate having a thickness greater than 200 microns may be increased, thereby increasing the material cost or affecting the functions of other film layers.

在本實施例中,基材130的材質可以包括聚對苯二甲酸乙二醇酯(polyethylene terephthalate,PET)、聚醯亞胺(polyimide,PI)、聚醚醚酮(polyether ether ketone,PEEK)、聚醚醯亞胺(polyetherimide,PEI)、聚醯胺(polyamide,PA)、聚醚碸(polyethersulfone,PES)、聚萘二甲酸乙二醇酯(polyethylene naphthalate,PEN)、上述的堆疊或上述之組合。In the present embodiment, the material of the substrate 130 may include polyethylene terephthalate (PET), polyimide (PI), polyether ether ketone (PEEK), polyetherimide (PEI), polyamide (PA), polyethersulfone (PES), polyethylene naphthalate (PEN), a stack of the above, or a combination thereof.

在本實施例中,研磨層150的材質可以包括多個無機粒子151以及將其包裹於其內的樹脂。此外,為清楚表示,於對應的圖式(如:圖1或圖2)中並未一一地標示所有的無機粒子。In this embodiment, the material of the polishing layer 150 may include a plurality of inorganic particles 151 and a resin encapsulating the inorganic particles 151. In addition, for the sake of clarity, not all inorganic particles are indicated one by one in the corresponding figures (eg, FIG. 1 or FIG. 2).

在本實施例中,研磨層150的樹脂的材質可以包括矽樹脂(silicone)、聚氨酯(polyurethane,PU)、聚甲基丙烯酸甲酯(poly(methyl methacrylate),PMMA;可被稱為:壓克力)或上述之組合。In the present embodiment, the resin material of the polishing layer 150 may include silicone, polyurethane (PU), polymethyl methacrylate (PMMA; also referred to as acrylic), or a combination thereof.

前述的無機粒子151可以包括球形或多邊形的氧化鋁(aluminum oxide)粒子、球形或多邊形的碳化矽(silicon carbide)粒子、球形或多邊形的鑽石粒子、球形或多邊形的石英粒子、球形或多邊形的氧化鋯(zirconia,ZrO 2)粒子、球形或多邊形二氧化鈰(ceria,CeO 2)粒子或上述之組合。前述的無機粒子的粒徑約為0.02微米至20微米,且前述的無機粒子的莫氏硬度(Moh’s hardness)大於或等於7。 The inorganic particles 151 may include spherical or polygonal aluminum oxide particles, spherical or polygonal silicon carbide particles, spherical or polygonal diamond particles, spherical or polygonal quartz particles, spherical or polygonal zirconia (ZrO 2 ) particles, spherical or polygonal ceria (CeO 2 ) particles, or a combination thereof. The particle size of the inorganic particles is about 0.02 microns to 20 microns, and the Moh's hardness of the inorganic particles is greater than or equal to 7.

在一實施例中,研磨層150所包含的粒子中可以不包括有機粒子。In one embodiment, the particles included in the polishing layer 150 may not include organic particles.

在本實施例中,研磨層150的厚度大於或等於5微米且小於或等於200微米。In this embodiment, the thickness of the polishing layer 150 is greater than or equal to 5 micrometers and less than or equal to 200 micrometers.

若研磨層(如:與研磨層150具有相同或相似的材料,但厚度不同)的厚度小於5微米,則去污片(包括厚度為5微米的研磨層)的清潔能力可能會降低;且/或,若研磨層(如:與研磨層150具有相同或相似的材料,但厚度不同)的厚度小於5微米,則附著到物件(如:圖3C、圖3F、圖4A或圖4B中所示的探針91)的物質(如:用於形成導電端子的焊料,或形成連接墊的鋁材、鋅材、銅材、碳材或共晶(eutectic)物)可能較難藉由去污片而相互分離。If the thickness of the polishing layer (e.g., having the same or similar material as the polishing layer 150 but a different thickness) is less than 5 microns, the cleaning ability of the decontamination sheet (including the polishing layer having a thickness of 5 microns) may be reduced; and/or, if the thickness of the polishing layer (e.g., having the same or similar material as the polishing layer 150 but a different thickness) is less than 5 microns, substances (e.g., solder used to form conductive terminals, or aluminum, zinc, copper, carbon, or eutectic materials forming connection pads) attached to an object (e.g., probe 91 shown in Figures 3C, 3F, 4A, or 4B) may be more difficult to separate from each other by the decontamination sheet.

如果研磨層(如:與研磨層150具有相同或相似的材料,但厚度不同)具有大於200微米的厚度,則在對物件(如:圖3C、圖3F、圖4A或圖4B中所示的探針91)進行清潔的過程中,可能容易造成其刮傷、斷裂及/或變形。If the polishing layer (e.g., having the same or similar material as polishing layer 150 but different thickness) has a thickness greater than 200 microns, it may be easily scratched, broken and/or deformed during the cleaning process of the object (e.g., probe 91 shown in Figures 3C, 3F, 4A or 4B).

在一實施例中,在藉由去污片100對物件(如:圖3C、圖3F、圖4A或圖4B中所示的探針91)進行清潔的過程中,研磨層150是去污片100的各層中與前述物體接觸的第一個膜層。In one embodiment, when cleaning an object (eg, the probe 91 shown in FIG. 3C , FIG. 3F , FIG. 4A , or FIG. 4B ) using the decontamination sheet 100 , the polishing layer 150 is the first film layer of the decontamination sheet 100 that contacts the object.

在本實施例中,清潔層140的材質可包括多個有機粒子141以及將其包裹於其內的矽樹脂。此外,為清楚表示,於對應的圖式(如:圖1或圖2)中並未一一地標示所有的有機粒子。In this embodiment, the material of the cleaning layer 140 may include a plurality of organic particles 141 and a silicone resin encapsulating the organic particles 141. In addition, for the sake of clarity, not all organic particles are indicated one by one in the corresponding figures (eg, FIG. 1 or FIG. 2).

前述有機粒子141包括由具有烯基(alkenyl group)、醚基(ether group)、酰胺基(amide group)、胺基(amine group)、羧基(carboxyl group)、酯基(ester group)、醇基(alcohol group)、矽烷基(silyl group)、烷氧基(alkoxy group)、矽烷氧基(alkoxysilyl group)或上述之組合的有機化合物所形成的球形或多邊形的粒子。上述有機粒子的粒徑約為0.05微米至30微米。The organic particles 141 include spherical or polygonal particles formed by organic compounds having alkenyl groups, ether groups, amide groups, amine groups, carboxyl groups, ester groups, alcohol groups, silyl groups, alkoxy groups, alkoxysilyl groups, or combinations thereof. The particle size of the organic particles is about 0.05 microns to 30 microns.

前述的矽樹脂例如是由具有高交聯網狀結構的有機矽氧烷(organosiloxane)所形成的有機聚合物。前述有機矽氧烷可以包括聚二甲基矽氧烷(polydimethylsiloxane)、聚甲基苯基矽氧烷(polymethylphenylsiloxane)、甲基聚矽氧烷(methylpolysiloxane)或上述之組合。前述矽樹脂的玻璃化轉變溫度(glass-transition temperature,Tg)低於室溫,如:前述矽樹脂的玻璃化轉變溫度約-60℃~-20℃。上述有機矽樹脂的重均分子量例如約為20,000g/mol~200,000g/mol。The aforementioned silicone resin is, for example, an organic polymer formed by an organosiloxane having a highly cross-linked network structure. The aforementioned organosiloxane may include polydimethylsiloxane, polymethylphenylsiloxane, methylpolysiloxane, or a combination thereof. The glass-transition temperature (Tg) of the aforementioned silicone resin is lower than room temperature, such as: the glass-transition temperature of the aforementioned silicone resin is about -60°C to -20°C. The weight average molecular weight of the aforementioned organosiloxane is, for example, about 20,000 g/mol to 200,000 g/mol.

清潔層140的形成方式可以如下所述。氯矽烷(chlorosilane,如:甲基三氯矽烷(methyltrichlorosilane)、二甲基二氯矽烷(dimethyldichlorosilane)、苯基三氯矽烷(phenyltrichlorosilane)、二苯基二氯矽烷(diphenyldichlorosilane)、甲基苯基二氯矽烷(methylphenyldichlorosilane)或上述之組合)的氯基團可以藉由反應(如:水解反應)被羥基取代,而生成對應的酸性水解物(如:acidic hydrolyzate)。水解反應的初始產物(如:上述的酸性水解物)可以是含有羥基的環狀、線狀和交聯聚合物的混合物。然後,基本上可以藉由水洗前述的酸性水解物以除酸,而產生基本上中性(如:pH = 7±1)的初級縮聚物(如:primary polycondensate)。上述縮聚物可以在空氣中熱氧化且/或在催化劑的作用下進一步縮合聚合(可稱為脫水聚合反應),然後,可以在適當的條件(如:調整反應溫度或氣體氛圍)藉由脫水聚合反應形成具有高交聯網狀結構的矽樹脂。具有高交聯度的有機矽樹脂的形態可以類似於膠體、凝膠或糊狀物。然後,可以將既定的有機粒子141添加到具有高交聯度的有機矽樹脂中。藉由在混合過程中所伴隨的攪拌步驟,有機粒子141可以在具有高交聯網絡結構的有機矽樹脂中可以更均勻地分佈。具有高交聯度的有機矽樹脂與上述得有機粒子之間基本上不發生化學反應。也就是說,上述得有機粒子141在用於形成有機矽樹脂的脫水聚合反應或任何反應期間不是催化劑。換句話說,在相同或相似的反應條件下(如:在相同或相似的反應溫度下),無論是否添加上述有機粒子,形成有機矽樹脂的反應速率常數基本上相同。The cleaning layer 140 may be formed as follows. The chloro group of chlorosilane (e.g., methyltrichlorosilane, dimethyldichlorosilane, phenyltrichlorosilane, diphenyldichlorosilane, methylphenyldichlorosilane or a combination thereof) may be replaced by a hydroxyl group through a reaction (e.g., a hydrolysis reaction) to generate a corresponding acidic hydrolyzate (e.g., an acidic hydrolyzate). The initial product of the hydrolysis reaction (e.g., the acidic hydrolyzate described above) may be a mixture of cyclic, linear and cross-linked polymers containing a hydroxyl group. Then, the acidic hydrolyzate can be washed with water to remove the acid, thereby producing a substantially neutral (e.g., pH = 7±1) primary polycondensate. The polycondensate can be thermally oxidized in air and/or further condensed and polymerized under the action of a catalyst (which can be called dehydration polymerization reaction), and then, a silicone resin with a highly cross-linked network structure can be formed by dehydration polymerization under appropriate conditions (e.g., adjusting the reaction temperature or gas atmosphere). The morphology of the organic silicone resin with a high degree of cross-linking can be similar to a colloid, a gel or a paste. Then, the predetermined organic particles 141 can be added to the organic silicone resin with a high degree of cross-linking. By the stirring step accompanying the mixing process, the organic particles 141 can be more evenly distributed in the organic silicon resin with a highly cross-linked network structure. There is basically no chemical reaction between the organic silicon resin with a high degree of cross-linking and the above-mentioned organic particles. In other words, the above-mentioned organic particles 141 are not a catalyst during the dehydration polymerization reaction or any reaction period used to form the organic silicon resin. In other words, under the same or similar reaction conditions (such as: at the same or similar reaction temperature), whether or not the above-mentioned organic particles are added, the reaction rate constant for forming the organic silicon resin is basically the same.

在一實施例中,清潔層140為具有低孔隙率(甚至,不含孔隙)的高交聯度的有機矽樹脂。在一實施例中,藉由有機矽樹脂的高緻密性,可能可以提升物質(如:後述的物質99)容易地與有機矽樹脂相接觸或摩擦,爾後被嵌或阱陷(trapped)於其內的可能。In one embodiment, the cleaning layer 140 is a highly cross-linked organic silicon resin with low porosity (or even no pores). In one embodiment, the high density of the organic silicon resin may increase the possibility that a substance (such as the substance 99 described below) can easily contact or rub against the organic silicon resin and then be embedded or trapped therein.

一般對於高分子材料而言,交聯度越高或越具有高交聯度結構的材料,其對應的孔隙率(如:Porosity)可能越低;或是,交聯度越高或越具有高交聯度結構的材料,其對應的彈性較低、機械強度較大,且/或硬度較大。Generally speaking, for polymer materials, the higher the degree of crosslinking or the more highly crosslinked the structure of the material, the lower the corresponding porosity (such as Porosity); or, the higher the degree of crosslinking or the more highly crosslinked the structure of the material, the lower the elasticity, the greater the mechanical strength, and/or the greater the hardness.

一般而言,有機矽樹脂的孔隙率可以藉由常用的方式(如:浸沒法(imbibition method)或氣體擴散法(Gas expansion method),但不限)進行測定。在一實施例中,清潔層140的有機矽樹脂的孔隙率可以小於3%;較佳地,小於或等於1%。若孔隙率大於3%(即,使用了具有低交聯度之樹脂作為清潔層)則可能由於孔隙較大,當被清潔物(如:圖3C、圖3F、或圖4A至圖4D中的探針91)插入清潔層時,其上的物質(如:後述的物質99)不會容易地與有機矽樹脂相接觸或摩擦,而降低其清潔效果。Generally speaking, the porosity of the organic silicon resin can be measured by a common method (such as, but not limited to, an immersion method or a gas expansion method). In one embodiment, the porosity of the organic silicon resin of the cleaning layer 140 can be less than 3%; preferably, less than or equal to 1%. If the porosity is greater than 3% (i.e., a resin with a low cross-linking degree is used as the cleaning layer), it may be due to the larger pores that when the object to be cleaned (such as the probe 91 in FIG. 3C, FIG. 3F, or FIG. 4A to FIG. 4D) is inserted into the cleaning layer, the material on it (such as the material 99 described later) will not easily contact or rub against the organic silicon resin, thereby reducing its cleaning effect.

在一實施例中,清潔層140的邵氏硬度(Shore Hardness)介於40A至80A。若清潔層(如:與清潔層140具有相同或相似的厚度,但硬度不同)的邵氏硬度大於80A,則可以增加被清潔物(如:圖3C、圖3F、或圖4A至圖4D中的探針91)產生過多、多大或過深刮痕的可能。若清潔層(如:與清潔層140具有相同或相似的厚度,但硬度不同)的邵氏硬度小於40A,則當被清潔物(如:圖3C、圖3F、或圖4A至圖4D中的探針91)插入清潔層時,其上的物質(如:後述的物質99)縱使與有機矽樹脂相接觸或摩擦,但仍較難有效地脫離,而降低其清潔效果。In one embodiment, the Shore Hardness of the cleaning layer 140 is between 40A and 80A. If the Shore Hardness of the cleaning layer (e.g., having the same or similar thickness as the cleaning layer 140 but different hardness) is greater than 80A, the possibility of excessive, large or deep scratches on the object to be cleaned (e.g., the probe 91 in FIG. 3C , FIG. 3F , or FIG. 4A to FIG. 4D ) can be increased. If the Shore hardness of the cleaning layer (e.g., having the same or similar thickness as the cleaning layer 140 but different hardness) is less than 40A, then when the object to be cleaned (e.g., probe 91 in FIG. 3C , FIG. 3F , or FIG. 4A to FIG. 4D ) is inserted into the cleaning layer, the material thereon (e.g., material 99 described later) is difficult to be effectively separated from the object even if it contacts or rubs against the organic silicone resin, thereby reducing its cleaning effect.

在一實施例中,邵氏硬度可以藉由一般常用的標準方法進行測試。舉例而言,邵氏硬度可以藉由ASTM D2240或ISO 868的標準測試方法/規範進行測試,而進行換算或估算。In one embodiment, the Shore hardness can be tested by a commonly used standard method. For example, the Shore hardness can be tested by the standard test method/specification of ASTM D2240 or ISO 868, and converted or estimated.

在本實施例中,清潔層140的楊氏模數(Young’s modulus)介於100 kg/cm 2至250 kg/cm 2。若清潔層(如:與清潔層140具有相同或相似的厚度,但拉伸或壓縮彈性模量(modulus of elasticity in tension or compression)不同)的楊氏模數大於250 kg/cm 2,則在多次地進行將被清潔物(如:圖3C、圖3F、或圖4A至圖4D中的探針91)與去污片相接觸時,可能會由於清潔層恢復到接近變形前的狀態的速度較慢,而可能降低清潔層的多次清潔能力。若清潔層(如:與清潔層140具有相同或相似的厚度,但拉伸或壓縮彈性模量不同)的楊氏模數小於100 kg/cm 2,則在多次地進行將被清潔物(如:圖3C、圖3F、或圖4A至圖4D中的探針91)與去污片相接觸時,可能會由於清潔層過於軟爛,而可能降低清潔層的多次清潔的能力。 In the present embodiment, the Young's modulus of the cleaning layer 140 is between 100 kg/cm 2 and 250 kg/cm 2 . If the Young's modulus of the cleaning layer (e.g., having the same or similar thickness as the cleaning layer 140 but a different modulus of elasticity in tension or compression) is greater than 250 kg/cm 2 , when the object to be cleaned (e.g., the probe 91 in FIG. 3C , FIG. 3F , or FIG. 4A to FIG. 4D ) is repeatedly brought into contact with the decontamination sheet, the cleaning layer may recover to a state close to that before deformation at a slower speed, thereby reducing the cleaning ability of the cleaning layer. If the Young's modulus of the cleaning layer (e.g., having the same or similar thickness as the cleaning layer 140 but a different tensile or compressive elastic modulus) is less than 100 kg/ cm2 , when the object to be cleaned (e.g., the probe 91 in FIG. 3C, FIG. 3F, or FIG. 4A to FIG. 4D) is repeatedly brought into contact with the decontamination sheet, the cleaning layer may be too soft and the cleaning ability of the cleaning layer may be reduced.

在一實施例中,清潔層140的楊氏模數可以更大於或等於130 kg/cm 2,且/或可以更小於或等於200 kg/cm 2In one embodiment, the Young's modulus of the cleaning layer 140 may be greater than or equal to 130 kg/cm 2 and/or may be less than or equal to 200 kg/cm 2 .

在一實施例中,清潔層140的楊氏模數可以更大於或等於130 kg/cm 2,且更小於或等於200 kg/cm 2。在被清潔物(如:圖3C、圖3F、或圖4A至圖4D中的探針91)與去污片100相接觸時(或;於短時間內快速地進行多次使用時),可能可以更提升清潔層140的清潔能力、清潔效率以及使用次數。 In one embodiment, the Young's modulus of the cleaning layer 140 may be greater than or equal to 130 kg/cm 2 and less than or equal to 200 kg/cm 2 . When the object to be cleaned (such as the probe 91 in FIG. 3C , FIG. 3F , or FIG. 4A to FIG. 4D ) is in contact with the decontamination sheet 100 (or when it is used multiple times in a short period of time), the cleaning ability, cleaning efficiency and number of uses of the cleaning layer 140 may be further improved.

在一實施例中,清潔層140的邵氏硬度可以介於40A至80A,且清潔層140的楊氏模數可以小於或等於250 kg/cm 2;或是更小於或等於200 kg/cm 2In one embodiment, the Shore hardness of the cleaning layer 140 may be between 40A and 80A, and the Young's modulus of the cleaning layer 140 may be less than or equal to 250 kg/cm 2 ; or less than or equal to 200 kg/cm 2 .

在一實施例中,清潔層140的邵氏硬度可以介於40A至80A,且清潔層140的楊氏模數可以大於或等於100 kg/cm 2;或是更大於或等於130 kg/cm 2In one embodiment, the Shore hardness of the cleaning layer 140 may be between 40A and 80A, and the Young's modulus of the cleaning layer 140 may be greater than or equal to 100 kg/cm 2 ; or greater than or equal to 130 kg/cm 2 .

在一實施例中,清潔層140的邵氏硬度可以介於40A至80A。並且,清潔層140的楊氏模數可以大於或等於100 kg/cm 2,且小於或等於250 kg/cm 2In one embodiment, the Shore hardness of the cleaning layer 140 may be between 40A and 80A. Also, the Young's modulus of the cleaning layer 140 may be greater than or equal to 100 kg/cm 2 and less than or equal to 250 kg/cm 2 .

在一實施例中,清潔層140的邵氏硬度可以介於40A至80A。並且,清潔層140的楊氏模數可以大於或等於100 kg/cm 2,且小於或等於200 kg/cm 2In one embodiment, the Shore hardness of the cleaning layer 140 may be between 40A and 80A. Also, the Young's modulus of the cleaning layer 140 may be greater than or equal to 100 kg/cm 2 and less than or equal to 200 kg/cm 2 .

在一實施例中,清潔層140的邵氏硬度可以介於40A至80A。並且,清潔層140的楊氏模數可以大於或等於130 kg/cm 2,且小於或等於250 kg/cm 2In one embodiment, the Shore hardness of the cleaning layer 140 may be between 40A and 80A. Also, the Young's modulus of the cleaning layer 140 may be greater than or equal to 130 kg/cm 2 and less than or equal to 250 kg/cm 2 .

在一實施例中,清潔層140的邵氏硬度可以介於40A至80A,楊氏模數可以大於或等於130 kg/cm 2且小於或等於200 kg/cm 2,且形成清潔層140的有機矽樹脂的孔隙率可以小於3%(較佳地,小於或等於1%;甚至,小於或等於0.7%)。如此一來,可以藉由前述具有低孔隙率的高交聯度有機矽樹脂所形成具有適宜硬度及彈性模量範圍的清潔層140,而在被清潔物(如:圖3C、圖3F、圖4A、或圖4B中的探針91)與去污片100相接觸時(或;於短時間內快速地進行多次使用時),可以更提升清潔層140的清潔能力、清潔效率以及使用次數,且可以降低被清潔物(如:圖3C、圖3F、或圖4A至圖4D中的探針91)的明顯磨損(如:產生較多、較大或較深的刮痕)。 In one embodiment, the Shore hardness of the cleaning layer 140 may be between 40A and 80A, the Young's modulus may be greater than or equal to 130 kg/cm 2 and less than or equal to 200 kg/cm 2 , and the porosity of the organic silicon resin forming the cleaning layer 140 may be less than 3% (preferably, less than or equal to 1%; even, less than or equal to 0.7%). In this way, a cleaning layer 140 having an appropriate hardness and elastic modulus range can be formed by the aforementioned high-crosslinked organic silicone resin with low porosity. When the object to be cleaned (such as the probe 91 in Figure 3C, Figure 3F, Figure 4A, or Figure 4B) is in contact with the decontamination sheet 100 (or when it is used multiple times in a short period of time), the cleaning ability, cleaning efficiency and usage of the cleaning layer 140 can be further improved, and the obvious wear of the object to be cleaned (such as the probe 91 in Figure 3C, Figure 3F, or Figures 4A to 4D) can be reduced (such as the generation of more, larger or deeper scratches).

在一實施例中,有機粒子可以適於與金屬材料(如:焊料)及/或金屬氧化物材料相黏或相接。In one embodiment, the organic particles may be suitable for bonding or connecting with metal materials (eg, solder) and/or metal oxide materials.

在一實施例中,有機粒子更可以適於與有高交聯度的有機矽樹脂相黏或相接(如:藉由凡得瓦力相接(Van der Waals bonding))。舉例而言,在形成有機粒子141的有機化合物中,所具有的官能基(如:烯基、醚基、醯胺基、胺基、羧基、酯基、醇基、矽烷基、烷氧基、烷氧矽烷基)可以適於與有高交聯度的有機矽樹脂相黏或相接。In one embodiment, the organic particles may be suitable for bonding or connecting with an organic silicon resin having a high degree of crosslinking (e.g., by Van der Waals bonding). For example, the functional groups (e.g., alkenyl, ether, amide, amino, carboxyl, ester, alcohol, silane, alkoxy, alkoxysilane) contained in the organic compound forming the organic particles 141 may be suitable for bonding or connecting with an organic silicon resin having a high degree of crosslinking.

在一實施例中,有機粒子141可以包括具有已進行表面處理過後的球形或多邊形的聚甲基丙烯酸甲酯(PMMA)粒子、具有已進行表面處理過後的球形或多邊形的聚苯乙烯(polystyrene,PS)粒子、具有已進行表面處理過後的球形或多邊形的聚矽氧烷顆粒或上述之組合。上述的處理可以包括:藉由進行適當的反應,已將聚合物粒子(如:聚甲基丙烯酸甲酯粒子、聚苯乙烯粒子或聚矽氧烷粒子)表面上的氫被官能基團(如:烯基、醚基、醯胺基、胺基、羧基、酯基、醇基、矽烷基、烷氧基或烷氧矽烷基)所取代。In one embodiment, the organic particles 141 may include spherical or polygonal polymethyl methacrylate (PMMA) particles having been surface treated, spherical or polygonal polystyrene (PS) particles having been surface treated, spherical or polygonal polysiloxane particles having been surface treated, or a combination thereof. The above treatment may include: hydrogen on the surface of the polymer particles (such as: polymethyl methacrylate particles, polystyrene particles or polysiloxane particles) has been replaced by a functional group (such as: alkenyl, ether, amide, amino, carboxyl, ester, alcohol, silane, alkoxy or alkoxysilane) by performing an appropriate reaction.

在一實施例中,有機粒子141的莫氏硬度小於7。如此一來,可以降低於被清潔物(如:圖3C、圖3F、或圖4A至圖4D中的探針91)產生刮痕的可能。In one embodiment, the Mohs hardness of the organic particles 141 is less than 7. In this way, the possibility of scratching the object to be cleaned (eg, the probe 91 in FIG. 3C , FIG. 3F , or FIG. 4A to FIG. 4D ) can be reduced.

在一實施例中,有機粒子141的粒徑大於無機粒子151的粒徑。In one embodiment, the particle size of the organic particles 141 is larger than the particle size of the inorganic particles 151 .

在一實施例中,於一單位體積中,有機粒子141於清潔層140中的顆數多於無機粒子151於研磨層150中的顆數。In one embodiment, in a unit volume, the number of organic particles 141 in the cleaning layer 140 is greater than the number of inorganic particles 151 in the polishing layer 150.

在一實施例中,清潔層140的材質可以不包括無機材料。In one embodiment, the material of the cleaning layer 140 may not include inorganic materials.

在本實施例中,清潔層140的厚度大於或等於150微米,且小於或等於500微米。若清潔層(如:與清潔層140具有相同或相似的材料,但厚度不同)的厚度小於150微米,則可能會降低去污片100的清潔能力。若清潔層(如:與清潔層140具有相同或相似的材料,但厚度不同)的厚度大於500微米,則有提高混合破壞(脫膠、殘膠、自身斷裂)的可能的可能。In this embodiment, the thickness of the cleaning layer 140 is greater than or equal to 150 microns and less than or equal to 500 microns. If the thickness of the cleaning layer (e.g., the same or similar material as the cleaning layer 140, but different thickness) is less than 150 microns, the cleaning ability of the decontamination sheet 100 may be reduced. If the thickness of the cleaning layer (e.g., the same or similar material as the cleaning layer 140, but different thickness) is greater than 500 microns, there is a possibility of increasing the possibility of mixed damage (debonding, residual glue, self-fracture).

在一實施例中,清潔層140的厚度大於或等於230微米,且小於或等於300微米。舉例而言,在本實施例中,清潔層140的厚度基本上可以為265微米。In one embodiment, the thickness of the cleaning layer 140 is greater than or equal to 230 micrometers and less than or equal to 300 micrometers. For example, in this embodiment, the thickness of the cleaning layer 140 can be substantially 265 micrometers.

在本實施例中,去污片100可以作為探針卡清潔墊(probe card clean pad),但本發明不限於此。In this embodiment, the decontamination sheet 100 may be used as a probe card clean pad, but the present invention is not limited thereto.

圖2是依照本發明的第二實施例的一種去污片的剖面示意圖。FIG. 2 is a schematic cross-sectional view of a decontamination sheet according to a second embodiment of the present invention.

請參照圖2,去污片200可以包括複合材料210、黏著層220、基材230、清潔層240以及研磨層250。黏著層220位於複合材料210下(於圖2中的下方)。基材230位於黏著層220下(於圖2中的下方)。清潔層240位於基材230下(於圖2中的下方)。研磨層250位於清潔層240下(於圖2中的下方)。2 , a decontamination sheet 200 may include a composite material 210, an adhesive layer 220, a substrate 230, a cleaning layer 240, and an abrasive layer 250. The adhesive layer 220 is located below the composite material 210 (at the bottom in FIG. 2 ). The substrate 230 is located below the adhesive layer 220 (at the bottom in FIG. 2 ). The cleaning layer 240 is located below the substrate 230 (at the bottom in FIG. 2 ). The abrasive layer 250 is located below the cleaning layer 240 (at the bottom in FIG. 2 ).

在本實施例中,去污片200可以包括層疊設置的複合材料210、黏著層220、基材230、清潔層240以及研磨層250。舉例而言,黏著層220的相對兩個表面可以直接接觸複合材料210及基材230,基材230的相對兩個表面可以直接接觸黏著層220以及清潔層240,且清潔層240的相對兩個表面可以直接接觸基材230以及研磨層250。In this embodiment, the decontamination sheet 200 may include a laminated composite material 210, an adhesive layer 220, a substrate 230, a cleaning layer 240, and an abrasive layer 250. For example, two opposite surfaces of the adhesive layer 220 may directly contact the composite material 210 and the substrate 230, two opposite surfaces of the substrate 230 may directly contact the adhesive layer 220 and the cleaning layer 240, and two opposite surfaces of the cleaning layer 240 may directly contact the substrate 230 and the abrasive layer 250.

在本實施例中,複合材料210可以包括硬質板狀體,但本發明不限於此。在一實施例中,前述作為複合材料210的硬質板狀體的材質可以包括矽質基板、玻璃纖維板(如:FR4板材)、硬質塑膠基板(如:壓克力板)或上述之複合板(composite plate)。在一實施例中,前述的複合板的厚度可為100微米至2000微米,但本發明不限於此。舉例而言,前述的複合板的厚度基本上為750微米。In this embodiment, the composite material 210 may include a hard plate-like body, but the present invention is not limited thereto. In one embodiment, the material of the hard plate-like body of the composite material 210 may include a silicon substrate, a glass fiber board (such as an FR4 board), a hard plastic substrate (such as an acrylic board) or the above-mentioned composite plate. In one embodiment, the thickness of the above-mentioned composite plate may be 100 microns to 2000 microns, but the present invention is not limited thereto. For example, the thickness of the above-mentioned composite plate is substantially 750 microns.

在本實施例中,去污片200的黏著層220的材質可以相同或相似於前述實施例的黏著層120的材質,且具有相同或相似的用途或性質,故於此不加以贅述。In this embodiment, the material of the adhesive layer 220 of the decontamination sheet 200 may be the same or similar to the material of the adhesive layer 120 of the aforementioned embodiment, and have the same or similar uses or properties, so they are not described in detail here.

在本實施例中,去污片200的基材230的材質可以相同或相似於前述實施例的基材130的材質,且具有相同或相似的用途或性質,故於此不加以贅述。In this embodiment, the material of the substrate 230 of the decontamination sheet 200 may be the same or similar to the material of the substrate 130 of the aforementioned embodiment, and has the same or similar uses or properties, so it will not be described in detail here.

在本實施例中,去污片200的清潔層240的材質可以相同或相似於前述實施例的清潔層140的材質,且具有相同或相似的用途或性質,故於此不加以贅述。舉例而言,清潔層240中可以的材質可包括多個有機粒子(如:相同或相似於有機粒子141的有機粒子)以及將其包裹於其內的矽樹脂。In this embodiment, the material of the cleaning layer 240 of the decontamination sheet 200 may be the same or similar to the material of the cleaning layer 140 of the above-mentioned embodiment, and has the same or similar uses or properties, so it is not described in detail here. For example, the material of the cleaning layer 240 may include a plurality of organic particles (e.g., organic particles that are the same or similar to the organic particles 141) and a silicone resin that encapsulates the organic particles.

在本實施例中,去污片200的研磨層250的材質可以相同或相似於前述實施例的研磨層150的材質,且具有相同或相似的用途或性質,故於此不加以贅述。舉例而言,研磨層250的材質可以包括多個無機粒子(如:相同或相似於無機粒子151的無機粒子)以及將其包裹於其內的樹脂。In this embodiment, the material of the abrasive layer 250 of the decontamination sheet 200 may be the same or similar to the material of the abrasive layer 150 of the aforementioned embodiment, and have the same or similar uses or properties, so it is not described in detail here. For example, the material of the abrasive layer 250 may include a plurality of inorganic particles (e.g., inorganic particles that are the same or similar to the inorganic particles 151) and a resin that encapsulates the inorganic particles.

在一實施例中,類似地,清潔層240中的有機粒子的硬度可以小於研磨層250中的無機粒子的硬度。In one embodiment, similarly, the hardness of the organic particles in the cleaning layer 240 may be less than the hardness of the inorganic particles in the polishing layer 250 .

在一實施例中,類似地,清潔層240中的有機粒子的粒徑可以大於研磨層250中的無機粒子的粒徑。In one embodiment, similarly, the particle size of the organic particles in the cleaning layer 240 may be larger than the particle size of the inorganic particles in the polishing layer 250 .

在一實施例中,類似地,於一單位體積中,有機粒子於清潔層240中的顆數多於無機粒子於研磨層250中的顆數。In one embodiment, similarly, in a unit volume, the number of organic particles in the cleaning layer 240 is greater than the number of inorganic particles in the polishing layer 250.

在本實施例中,清潔層240的厚度基本上可以為150微米。In this embodiment, the thickness of the cleaning layer 240 may be substantially 150 microns.

在本實施例中,去污片200可以作為測試座清潔墊(test socket clean pad),但本發明不限於此。In this embodiment, the decontamination sheet 200 may be used as a test socket clean pad, but the present invention is not limited thereto.

在本發明中,可以藉由前述任一實施例的去污片100、200,以對探針(probe pin)進行清潔。但值得注意的是,本發明並未限定前述任一實施例的去污片100、200的用途。In the present invention, the probe pin can be cleaned by using the decontamination sheet 100, 200 of any of the aforementioned embodiments. However, it should be noted that the present invention does not limit the use of the decontamination sheet 100, 200 of any of the aforementioned embodiments.

探針的清潔方法可以包括以下步驟。步驟1:藉由探針對電子元件進行測試。步驟2:於前述的步驟1之後,藉由前述任一實施例的去污片100、200對探針進行清潔。The method for cleaning the probe may include the following steps: Step 1: Testing the electronic component with the probe. Step 2: After the aforementioned step 1, cleaning the probe with the decontamination sheet 100, 200 of any of the aforementioned embodiments.

探針的清潔方法舉例如下。請參照圖3A至圖4D,其中圖3A至圖3F是依照本發明的一實施例的一種探針的清潔方法的示意圖,且圖4A至圖4D是依照本發明的一實施例的一種探針的清潔方法的局部剖面放大示意圖。The cleaning method of the probe is exemplified as follows: Please refer to Figures 3A to 4D, wherein Figures 3A to 3F are schematic diagrams of a cleaning method of a probe according to an embodiment of the present invention, and Figures 4A to 4D are partial cross-sectional enlarged schematic diagrams of a cleaning method of a probe according to an embodiment of the present invention.

請參照圖3A至圖3C,可以藉由一般常用的測試方式,以藉由探針91對電子元件70進行電性測試。3A to 3C , the electrical properties of the electronic component 70 can be tested by a probe 91 in a commonly used testing manner.

以圖3A為例,提供電子元件70及去污片300。Taking FIG. 3A as an example, an electronic component 70 and a decontamination sheet 300 are provided.

在本實施例中,電子元件70例如為裸晶(bare die)或晶片封裝件(chip package),但本發明不限於此。In this embodiment, the electronic component 70 is, for example, a bare die or a chip package, but the present invention is not limited thereto.

在本實施例中,去污片300可以是相同或相似於前述實施例的去污片200。也就是說,去污片300的基材330的材質可以相同或相似於前述實施例的基材230的材質,且具有相同或相似的用途或性質,故於此不加以贅述。或是;在本實施例中,去污片300的清潔層340的材質可以相同或相似於前述實施例的清潔層240的材質,且具有相同或相似的用途或性質(如:邵氏硬度)。另外,為清楚表示,省略繪示了清潔層340中的有機粒子(如,與有機粒子141相同或相似),並省略描述。或是;去污片300的研磨層350的材質可以相同或相似於前述實施例的研磨層150的材質相同或相似,且具有相同或相似的用途或性質。另外,為清楚表示,省略繪示了研磨層350中的無機粒子(如,與無機粒子151相同或相似),並省略描述。另外,於圖式中,省略繪示了去污片300的黏著層(如:相同或相似於前述黏著層120或220的黏著層)及複合材料(如:相同或相似於前述複合材料210的複合材料)。In this embodiment, the decontamination sheet 300 may be the same as or similar to the decontamination sheet 200 of the aforementioned embodiment. That is, the material of the substrate 330 of the decontamination sheet 300 may be the same as or similar to the material of the substrate 230 of the aforementioned embodiment, and have the same or similar uses or properties, so it is not described in detail here. Or; in this embodiment, the material of the cleaning layer 340 of the decontamination sheet 300 may be the same as or similar to the material of the cleaning layer 240 of the aforementioned embodiment, and have the same or similar uses or properties (such as Shore hardness). In addition, for clarity, the organic particles in the cleaning layer 340 (such as the same as or similar to the organic particles 141) are omitted from drawing and description. Alternatively, the material of the polishing layer 350 of the decontamination sheet 300 may be the same or similar to the material of the polishing layer 150 of the aforementioned embodiment, and have the same or similar uses or properties. In addition, for the sake of clarity, the inorganic particles in the polishing layer 350 (e.g., the same or similar to the inorganic particles 151) are omitted from depiction, and the description is omitted. In addition, in the figure, the adhesive layer (e.g., the same or similar to the aforementioned adhesive layer 120 or 220) and the composite material (e.g., the same or similar to the aforementioned composite material 210) of the decontamination sheet 300 are omitted from depiction.

在一未繪示的實施例中,去污片300可以是相同或相似於前述實施例的去污片100。In an embodiment not shown, the stain removal sheet 300 may be the same as or similar to the stain removal sheet 100 of the aforementioned embodiment.

然後,如圖3B所示,可以藉由取放(pick-up and place)裝置80的取放頭81,以拾取欲被測試的電子元件70。Then, as shown in FIG. 3B , the electronic component 70 to be tested may be picked up by a pick-up and place head 81 of a pick-up and place device 80 .

然後,如圖3C所示,可以藉由取放裝置80,以將欲被測試的電子元件70置於測試裝置90上。Then, as shown in FIG. 3C , the electronic component 70 to be tested can be placed on the testing device 90 by using the pick-and-place device 80 .

測試裝置90例如具有多個探針(probe pin)91。探針91可以接觸電子元件70的被測試面71上的導電端子(如:焊球)(未繪示)或接觸墊(contact pad)(未繪示),以對電子元件70進行測試。舉例而言,可以對欲被測試的電子元件70及/或探針91施加壓力,以使欲被測試的電子元件70的被測試面71上的導電端子或接觸墊與探針91相接觸。The testing device 90, for example, has a plurality of probe pins 91. The probe pins 91 can contact conductive terminals (such as solder balls) (not shown) or contact pads (not shown) on the test surface 71 of the electronic component 70 to test the electronic component 70. For example, pressure can be applied to the electronic component 70 to be tested and/or the probe pins 91 so that the conductive terminals or contact pads on the test surface 71 of the electronic component 70 to be tested are in contact with the probe pins 91.

在本實施例中,測試方式例如為最終測試(final test;FT),但本發明不限於此。在一實施例中,測試方式可以為晶圓針測(chip probing;CP)。In this embodiment, the testing method is, for example, a final test (FT), but the present invention is not limited thereto. In one embodiment, the testing method may be a chip probing (CP).

在於前述圖3A至圖3C的示例性測試後,可以藉由類似的作動方式,藉由去污片300對探針91進行清潔。After the exemplary test in FIG. 3A to FIG. 3C , the probe 91 may be cleaned by the decontamination sheet 300 in a similar manner.

以圖3C至圖3D為例,對電子元件70進行測試之後,可以使電子元件70與探針91相分離,並可以藉由取放裝置80置放電子元件70。Taking FIG. 3C to FIG. 3D as an example, after the electronic component 70 is tested, the electronic component 70 can be separated from the probe 91 and the electronic component 70 can be placed by the pick-and-place device 80 .

在一實施例中,於電子元件70與探針91相接觸及/或相分離的過程中,電子元件70上的部分物質(如:形成導電端子的焊料或形成接觸墊的鋁料、鋅料或銅料)可能會剝離且沾附於探針91上。In one embodiment, during the process of contact and/or separation between the electronic component 70 and the probe 91, some materials on the electronic component 70 (such as solder forming the conductive terminal or aluminum, zinc or copper forming the contact pad) may be peeled off and adhered to the probe 91.

然後,如圖3E所示,可以藉由取放裝置80的取放頭81,以拾取去污片300。Then, as shown in FIG. 3E , the cleaning sheet 300 may be picked up by the pick-and-place head 81 of the pick-and-place device 80 .

然後,如圖3F所示,可以藉由取放裝置80,以將去污片300置於測試裝置90上,以藉由去污片300對探針91進行清潔。Then, as shown in FIG. 3F , the cleaning sheet 300 can be placed on the testing device 90 by the pick-and-place device 80 , so as to clean the probe 91 by the cleaning sheet 300 .

舉例而言,可以對去污片300及/或探針91施加壓力,以使去污片300與探針91相接觸,以使沾附於探針91上的物質99(如:焊料、鋁料、鋅料、銅料或可能的汙漬;標示或繪示於圖4A至圖4D)被去污片300的清潔層340黏貼。之後,可以使去污片300與探針91相分離,並可以藉由去污片300以降低沾附於探針91上的物質99。For example, pressure may be applied to the decontamination sheet 300 and/or the probe 91 to bring the decontamination sheet 300 into contact with the probe 91, so that the substance 99 (e.g., solder, aluminum, zinc, copper, or possible contaminants; as indicated or depicted in FIGS. 4A to 4D ) adhering to the probe 91 is adhered by the cleaning layer 340 of the decontamination sheet 300. Thereafter, the decontamination sheet 300 may be separated from the probe 91, and the substance 99 adhering to the probe 91 may be reduced by the decontamination sheet 300.

詳細而言,請參照圖4A至圖4D。For details, please refer to FIG. 4A to FIG. 4D .

如圖4A至圖4B所示,探針91用於測試的一端(即,用於接觸電子元件70的一端)可以穿入去污片300的研磨層350。附著在探針91上的物質99可能會被研磨層350中的無機粒子從探針91上鬆脫。舉例而言,在探針91穿入研磨層350的過程中,探針91上的物質99可能會與研磨層350中的無機粒子摩擦。As shown in FIGS. 4A and 4B , the end of the probe 91 for testing (i.e., the end for contacting the electronic component 70) can penetrate the polishing layer 350 of the decontamination sheet 300. The substance 99 attached to the probe 91 may be loosened from the probe 91 by the inorganic particles in the polishing layer 350. For example, during the process of the probe 91 penetrating the polishing layer 350, the substance 99 on the probe 91 may rub against the inorganic particles in the polishing layer 350.

如圖4B至圖4C所示,在探針91穿入研磨層350的過程中,探針91的該端可進一步地穿入去污片300的清潔層340。As shown in FIG. 4B to FIG. 4C , during the process of the probe 91 penetrating the polishing layer 350 , the end of the probe 91 may further penetrate the cleaning layer 340 of the decontamination sheet 300 .

如圖4C所示,由於在探針91穿入研磨層350的過程中,附著在探針91上的物質99可能已經從探針91上鬆脫,因此當探針91穿入清潔層340時,清潔層340的有機粒子可以更容易地從探針91上移除物質99。As shown in FIG. 4C , since the substance 99 attached to the probe 91 may have been loosened from the probe 91 during the process of the probe 91 penetrating the polishing layer 350 , when the probe 91 penetrates the cleaning layer 340 , the organic particles of the cleaning layer 340 can more easily remove the substance 99 from the probe 91 .

如圖4C至圖4D所示,在探針91從研磨層350分離的過程中,從探針91上所移除的物質99中的一大部分可能可以被嵌或阱陷於矽樹脂中。此外,由於清潔層340的楊氏模量小於研磨層350的楊氏模量,因此,從探針91上所移除的物質99中的一大部分可以被留滯而被嵌或阱陷於矽樹脂中。如此一來,因此,在上述分離過程中,可以降低物質99重新附著和重新黏附到探針91上的可能性。值得注意的是,前述某一層的楊氏模量由整個層來進行標準化量測(如:ASTM D882)和對應的計算而確定(如:整個清潔層340可包括具有交聯網絡結構的有機矽樹脂以及有機粒子,且/或整個研磨層350可以包括樹脂和無機粒子)。As shown in FIG. 4C to FIG. 4D , during the separation of the probe 91 from the polishing layer 350, a large portion of the material 99 removed from the probe 91 may be embedded or trapped in the silicone resin. In addition, since the Young's modulus of the cleaning layer 340 is smaller than the Young's modulus of the polishing layer 350, a large portion of the material 99 removed from the probe 91 may be retained and embedded or trapped in the silicone resin. As a result, during the above separation process, the possibility of the material 99 reattaching and re-adhering to the probe 91 can be reduced. It is worth noting that the Young's modulus of the aforementioned layer is determined by standardized measurement (e.g., ASTM D882) and corresponding calculation of the entire layer (e.g., the entire cleaning layer 340 may include an organic silicone resin with a cross-linked network structure and organic particles, and/or the entire polishing layer 350 may include a resin and inorganic particles).

在一實施例中,於一單位體積中,由於有機粒子於清潔層340中的顆數多於無機粒子於研磨層350中的顆數,如此一來,可以使從探針91上所移除的物質99中的一大部分更容易地藉由有機粒子而被嵌或阱陷於矽樹脂中,且/或可以降低探針91自其刺入的去污片300分離過程中,因探針91的抽出而使被移除的物質99自去污片300脫離的可能。也因此,可以使去污片300具有較多的有效使用次數。In one embodiment, in a unit volume, since the number of organic particles in the cleaning layer 340 is greater than the number of inorganic particles in the polishing layer 350, a large portion of the substance 99 removed from the probe 91 can be more easily embedded or trapped in the silicone resin by the organic particles, and/or the possibility of the removed substance 99 being separated from the decontamination sheet 300 due to the withdrawal of the probe 91 during the separation process of the probe 91 from the decontamination sheet 300 into which it penetrates can be reduced. Therefore, the decontamination sheet 300 can have a longer effective use number.

在一實施例中,縱使於探針91與研磨層350相接觸及/或相分離的過程中,無機粒子可能會(但,未排除「不會」之可能)於探針91上產生對應的刮痕,但由於無機粒子的粒徑約為0.02微米至20微米,因此也可以降低刮痕(若有)的尺寸及/或痕跡,而可以降低因為刮痕(若有)而造成探針91在後續使用上效能降低的可能。In one embodiment, even though inorganic particles may (but the possibility of “not”) produce corresponding scratches on the probe 91 during the process of contact and/or separation between the probe 91 and the polishing layer 350, the particle size of the inorganic particles is approximately 0.02 microns to 20 microns, so the size and/or trace of the scratches (if any) can be reduced, thereby reducing the possibility of reduced performance of the probe 91 in subsequent use due to the scratches (if any).

如圖4D所示,在使去污片300與探針91相分離後,沾附且/或包覆於探針91上的物質99的數量可以降低。As shown in FIG. 4D , after the decontamination sheet 300 is separated from the probe 91 , the amount of the substance 99 adhering to and/or coating the probe 91 can be reduced.

在藉由本發明前述任一實施例的去污片100、200、300對探針91進行清潔的方式或步驟中,探針91可以不從測試裝置90被拆解或分離。並且,對探針91的清潔可以藉由相同或相似於對電子元件70進行測試的操作參數(recipe)。也就是說,探針91的清潔方法的步驟可以是原位(in-situ)執行或線上(on-line)執行。In the manner or steps of cleaning the probe 91 by using the decontamination sheet 100, 200, 300 of any of the aforementioned embodiments of the present invention, the probe 91 may not be disassembled or separated from the test device 90. Furthermore, the cleaning of the probe 91 may be performed by the same or similar operating parameters (recipe) as those for testing the electronic component 70. In other words, the steps of the cleaning method of the probe 91 may be performed in-situ or on-line.

值得注意的是,於圖3A至圖4D中僅是示例性地介紹一種探針91的清潔方法,本發明對於探針91的種類並未加以限制。舉例而言,在圖3A至圖4D中,所繪示的探針91為垂直式探針(vertical probe pin),但本發明不限於此。在一未繪示的實施例中,本發明前述任一實施例的去污片100、200、300也藉由類似於一般的測試方式,而可被用於懸臂式探針(cantilever probe pin)的清潔。It is worth noting that FIG. 3A to FIG. 4D only exemplarily introduce a method for cleaning a probe pin 91, and the present invention does not limit the type of the probe pin 91. For example, in FIG. 3A to FIG. 4D, the probe pin 91 shown is a vertical probe pin, but the present invention is not limited thereto. In an embodiment not shown, the decontamination sheet 100, 200, 300 of any of the above embodiments of the present invention can also be used to clean a cantilever probe pin by a method similar to a general test method.

圖5A是依照本發明的一比較例的一種清潔層的局部剖面放大圖。圖5B是依照本發明的一實驗例的一種清潔層的局部剖面放大圖。具體而言,圖5A和圖5B分別是比較例和實驗例所對應的清潔層的局部剖面藉由掃描電子顯微鏡(Scanning Electron Microscope,SEM)進行200倍觀察之放大圖。FIG5A is an enlarged partial cross-sectional view of a cleaning layer according to a comparative example of the present invention. FIG5B is an enlarged partial cross-sectional view of a cleaning layer according to an experimental example of the present invention. Specifically, FIG5A and FIG5B are respectively enlarged views of the partial cross-sectional view of the cleaning layer corresponding to the comparative example and the experimental example observed by a scanning electron microscope (SEM) at 200 times.

將圖5B所示的清潔層實際用於結構相同或相似於前述實施例所述的去污片100、200或300上時,清潔層可以適於黏貼探針上的物質,而可以適於探針的清潔,且可以降低於探針上產生刮痕的可能或降低所產生的刮痕的尺寸。並且,於短時間內快速地進行多次(如:0.2秒/次)的針刺使用時,仍可以具有好的清潔能力以及清潔效率。When the cleaning layer shown in FIG. 5B is actually used on the decontamination sheet 100, 200 or 300 having the same or similar structure as the above-mentioned embodiments, the cleaning layer can be suitable for sticking substances on the probe, and can be suitable for cleaning the probe, and can reduce the possibility of scratches on the probe or reduce the size of the scratches. Moreover, when the needle is punctured multiple times in a short time (e.g., 0.2 seconds/time), it can still have good cleaning ability and cleaning efficiency.

另外,將具有圖5A所示的具有明顯孔隙的清潔層實際用於結構相似於前述實施例所述的去污片上時,若在多次地進行將探針與去污片相接觸時或之後,由於清潔層過於軟爛,而無法有效地使探針被清潔,且清潔能力以及清潔效率較差。In addition, when the cleaning layer with obvious pores as shown in FIG. 5A is actually used on a decontamination sheet having a structure similar to that described in the aforementioned embodiment, when or after the probe is brought into contact with the decontamination sheet for multiple times, the cleaning layer is too soft and the probe cannot be effectively cleaned, and the cleaning ability and cleaning efficiency are poor.

綜上所述,在本發明的去污片及藉由前述的去污片進行探針清潔的清潔方法中,由於清潔層可以適於黏貼探針上的物質,而可以適於探針的清潔,且可以降低於探針上產生刮痕的可能或降低所產生的刮痕的尺寸;且/或,本發明的去污片可以具有較多的有效使用次數。In summary, in the decontamination sheet of the present invention and the cleaning method of the probe by using the aforementioned decontamination sheet, since the cleaning layer can be suitable for sticking to the material on the probe, it can be suitable for cleaning the probe, and can reduce the possibility of scratches on the probe or reduce the size of the scratches; and/or, the decontamination sheet of the present invention can have more effective usage times.

100、200、300:去污片 110:離型層 210:複合材料 120、220:黏著層 130、230、330:基材 140、240、340:清潔層 141:有機粒子 150、250、350:研磨層 151:無機粒子 80:取放裝置 81:取放頭 70:電子元件 71:被測試面 90:測試裝置 91:探針 99:物質 100, 200, 300: Decontamination sheet 110: Release layer 210: Composite material 120, 220: Adhesive layer 130, 230, 330: Substrate 140, 240, 340: Cleaning layer 141: Organic particles 150, 250, 350: Polishing layer 151: Inorganic particles 80: Pick-and-place device 81: Pick-and-place head 70: Electronic component 71: Test surface 90: Test device 91: Probe 99: Substance

圖1是依照本發明的第一實施例的一種去污片的剖面示意圖。 圖2是依照本發明的第二實施例的一種去污片的剖面示意圖。 圖3A至圖3F是依照本發明的一實施例的一種探針的清潔或去汙方法的示意圖。 圖4A至圖4D是依照本發明的一實施例的一種探針的清潔或去汙方法的局部剖面放大示意圖。 圖5A是依照本發明的一比較例的一種清潔層的局部剖面放大圖。 圖5B是依照本發明的一實驗例的一種清潔層的局部剖面放大圖。 FIG. 1 is a schematic cross-sectional view of a decontamination sheet according to a first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of a decontamination sheet according to a second embodiment of the present invention. FIG. 3A to FIG. 3F are schematic views of a probe cleaning or decontamination method according to an embodiment of the present invention. FIG. 4A to FIG. 4D are partially enlarged schematic cross-sectional views of a probe cleaning or decontamination method according to an embodiment of the present invention. FIG. 5A is a partially enlarged cross-sectional view of a cleaning layer according to a comparative example of the present invention. FIG. 5B is a partially enlarged cross-sectional view of a cleaning layer according to an experimental example of the present invention.

100:去污片 100: Decontamination tablets

110:離型層 110: Release layer

120:黏著層 120: Adhesive layer

130:基材 130: Base material

140:清潔層 140: Cleaning layer

141:有機粒子 141: Organic particles

150:研磨層 150: Grinding layer

151:無機粒子 151: Inorganic particles

Claims (7)

一種去污片,包括:離型層或複合材料;黏著層,位於所述離型層或複合材料上;基材,位於所述黏著層上;清潔層,位於所述基材上,其中所述清潔層的材質包括具有高交聯度的有機矽樹脂以及有機粒子;以及研磨層,位於所述清潔層上,其中:所述具有高交聯度的有機矽樹脂的孔隙率小於3%;所述清潔層的邵氏硬度介於40A至80A,且所述清潔層的楊氏模數介於130kg/cm2至200kg/cm2;且所述有機粒子於所述具有高交聯度的有機矽樹脂的形成過程中不是作為催化劑。 A decontamination sheet comprises: a release layer or a composite material; an adhesive layer located on the release layer or the composite material; a substrate located on the adhesive layer; a cleaning layer located on the substrate, wherein the material of the cleaning layer comprises an organic silicone resin with a high crosslinking degree and organic particles; and an abrasive layer located on the cleaning layer, wherein: the porosity of the organic silicone resin with a high crosslinking degree is less than 3%; the Shore hardness of the cleaning layer is between 40A and 80A, and the Young's modulus of the cleaning layer is between 130kg/ cm2 and 200kg/ cm2 ; and the organic particles do not act as a catalyst in the formation process of the organic silicone resin with a high crosslinking degree. 如請求項1所述的去污片,其中所述離型層或複合材料、所述黏著層、所述基材、所述清潔層以及所述研磨層依序堆疊。 A decontamination sheet as described in claim 1, wherein the release layer or composite material, the adhesive layer, the substrate, the cleaning layer and the polishing layer are stacked in sequence. 如請求項1所述的去污片,其中所述清潔層的相對兩表面直接接觸所述基材及所述研磨層,且在藉由所述去污片對物件進行清潔的過程中,所述研磨層為所述物件接觸所述去污片的膜層中的第一者。 A decontamination sheet as described in claim 1, wherein the two opposite surfaces of the cleaning layer directly contact the substrate and the polishing layer, and in the process of cleaning an object by using the decontamination sheet, the polishing layer is the first of the film layers of the object that contacts the decontamination sheet. 如請求項1所述的去污片,其中所述有機粒子的莫氏硬度小於7。 A decontamination sheet as described in claim 1, wherein the Mohs hardness of the organic particles is less than 7. 如請求項1所述的去污片,其中所述研磨層的材質包括:樹脂;以及無機粒子。 The decontamination sheet as described in claim 1, wherein the material of the abrasive layer includes: resin; and inorganic particles. 如請求項5所述的去污片,其中所述無機粒子的莫氏硬度大於或等於7。 A decontamination sheet as described in claim 5, wherein the Mohs hardness of the inorganic particles is greater than or equal to 7. 如請求項1所述的去污片,其中所述研磨層的楊氏模數大於所述清潔層的楊氏模數。 A decontamination sheet as described in claim 1, wherein the Young's modulus of the abrasive layer is greater than the Young's modulus of the cleaning layer.
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030089384A1 (en) * 2001-05-02 2003-05-15 Nihon Microcoating Co., Ltd. Cleaning sheet and method for a probe
US20050255796A1 (en) * 2004-05-14 2005-11-17 Sumitomo Electric Industries, Ltd. Probe cleaning sheet and cleaning method
US20080242576A1 (en) * 2006-08-09 2008-10-02 Jun Tamura Probe cleaning sheet
JP2010210349A (en) * 2009-03-09 2010-09-24 Nihon Micro Coating Co Ltd Probe cleaning sheet and probe cleaning material
TW201308480A (en) * 2011-05-06 2013-02-16 日東電工股份有限公司 Cleaning sheet, cleaning member, cleaning method and conduction inspection device
TW202118561A (en) * 2019-11-12 2021-05-16 山太士股份有限公司 Probe pin clean pad and clean method for probe pin
TWM639433U (en) * 2022-03-10 2023-04-01 山太士股份有限公司 Decontamination sheet

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030089384A1 (en) * 2001-05-02 2003-05-15 Nihon Microcoating Co., Ltd. Cleaning sheet and method for a probe
US20050255796A1 (en) * 2004-05-14 2005-11-17 Sumitomo Electric Industries, Ltd. Probe cleaning sheet and cleaning method
US20080242576A1 (en) * 2006-08-09 2008-10-02 Jun Tamura Probe cleaning sheet
JP2010210349A (en) * 2009-03-09 2010-09-24 Nihon Micro Coating Co Ltd Probe cleaning sheet and probe cleaning material
TW201308480A (en) * 2011-05-06 2013-02-16 日東電工股份有限公司 Cleaning sheet, cleaning member, cleaning method and conduction inspection device
TW202118561A (en) * 2019-11-12 2021-05-16 山太士股份有限公司 Probe pin clean pad and clean method for probe pin
TWM639433U (en) * 2022-03-10 2023-04-01 山太士股份有限公司 Decontamination sheet

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