TWM658196U - Process device - Google Patents

Abstract

A process device including a substrate and a coating layer is provided. The coating layer is disposed on the substrate. A material of the coating layer includes resin, cross-linking agent and cleaning material. Based on 100 weight units of the resin, the cross-linking agent is 5 to 50 parts by weight. Based on 100 weight units of resin, the cleaning material is 5 to 200 parts by weight. Based on the above, at least because the cross-linking agent and cleaning material in the coating layer have a specific weight ratio range, the processing device may be suitable for a corresponding cleaning step during or after a testing process of an electronic component.

Description

Process equipment

This novel invention relates to a process device, and in particular to a process device applicable to processes related to electronic components.

In the testing of electronic components (such as final test (FT) or chip probing (CP), but not limited to the above), it is often necessary to use a probe pin to measure electrical properties. Then, if there are impurities or scratches on the probe pin, it may affect the test results of the electronic component.

This novel invention provides a process device that can be applied to electronic component related processes.

The process device of the novel invention includes a substrate and a coating. The coating is located on the substrate. The materials of the coating include resin, bridge agent and cleaning material. The bridge agent is 5 to 50 parts by weight based on 100 weight units of resin. The cleaning material is 5 to 200 parts by weight based on 100 weight units of resin.

In one embodiment of the present invention, the Shore hardness of the coating is between 40 A and 80 A.

In one embodiment of the present invention, the elastic coefficient of the coating is between 50 kg/cm ² and 300 kg/cm ² .

In one embodiment of the present invention, the flatness of the coating is less than or equal to 50 microns.

In one embodiment of the present invention, the molecular weight of the resin is between 20,000 g/mol and 1,500,000 g/mol. In one embodiment of the present invention, the molecular weight of the resin is further between 20,000 g/mol and 1,000,000 g/mol.

In one embodiment of the present invention, the glass transition point of the resin is greater than or equal to -60°C. In one embodiment of the present invention, the glass transition point of the resin is between -60°C and -20°C.

In one embodiment of the present invention, the coating is formed by applying a coating on a substrate and curing the coating, wherein the viscosity of the coating is between 200 cps and 5,000 cps.

In one embodiment of the present invention, the coating layer is formed by applying the coating material on the substrate and curing it, wherein the curing step includes a thermal curing step and a photocuring step.

In one embodiment of the present invention, the thermal curing step is performed by heating with infrared light.

In one embodiment of the present invention, the photocuring step is performed in an oxygen-free environment.

Based on the above, the process device can be applied to the corresponding cleaning steps during or after the testing process of electronic components.

100: Process equipment

110: Release layer

120: Adhesive layer

130: Substrate

140:Coating

300: Electronic components

320: Conductive terminal

90: Probe card

91: Probe

99:Matter

Figure 1 is a schematic cross-sectional view of a process device according to an embodiment of the present invention.

Figure 2 is a side view schematic diagram according to a commonly used test method.

Figures 3A to 3D are schematic side views of a process device performing a cleaning or decontamination process according to an embodiment of the present invention.

In the attached figures, for the sake of clarity, the size of some components or film layers is enlarged or reduced. In addition, for the sake of clarity, some film layers or components may be omitted in the illustration.

Directional terms used herein (e.g., up, down, right, left, front, back, top, bottom) are used only with reference to the drawings and are not intended to imply an absolute orientation.

In the specification, "between" or "approximately" is used to indicate the range of two different numerical values, which is greater than or approximately equal to the smaller value, and less than or approximately equal to the larger value.

The numerical values indicated in the specification may include the numerical values and deviation values within the deviation range acceptable to persons of ordinary skill in the art. The above deviation values may be one or more standard deviations (Standard Deviation) in the manufacturing process or measurement process, or calculation errors caused by other factors such as the number of digits used, rounding, or error propagation in the calculation or conversion process.

Figure 1 is a cross-sectional schematic diagram of a process device according to the first embodiment of the present invention.

Referring to FIG. 1 , the process device 100 may include a substrate 130 and a coating layer 140. The coating layer 140 is located on the substrate 130 (on the top in FIG. 1 ).

In one embodiment, the process device 100 may further include a release layer 110 and an adhesive layer 120. The release layer 110 is located below the adhesive layer 120 (at the bottom in FIG. 1 ). The adhesive layer 120 is located below the substrate 130 (at the bottom in FIG. 1 ). In other words, the adhesive layer 120 and the coating layer 140 are located at two opposite sides of the substrate 130 , respectively.

In one embodiment, if the process device 100 includes a release layer 110, an adhesive layer 120, a substrate 130, and a coating layer 140, then in an exemplary use of the process device 100, the release layer 110 may be removed first, so as to be fixed to a corresponding object by the adhesive layer 120.

Exemplary features of each layer in the process device 100 and the corresponding functions can be described in detail as follows.

[Release layer]

In one embodiment, the release layer 110 may include a release film or a release paper, but the present invention is not limited thereto.

In one embodiment, the material of the release film used as the release layer 110 may include polyethylene terephthalate (PET).

In one embodiment, the thickness of the release layer 110 may be 25 micrometers (μm) to 175 micrometers, but the present invention is not limited thereto.

In one embodiment, the release force of the release layer 110 may be 2gf/25mm to 200gf/25mm, but the present invention is not limited thereto.

[Adhesive layer]

In one embodiment, the thickness of the adhesive layer 120 is between 10 microns and 50 microns. For example, the thickness of the adhesive layer 120 is substantially 25 microns.

If the thickness of the adhesive layer (similar to the adhesive layer 120 but different in thickness) is less than 10 microns, the adhesive force of the adhesive layer may be reduced.

If the thickness of the adhesive layer (similar to the adhesive layer 120, but with a different thickness) is greater than 50 microns, the adhesive layer may be too thick, which may correspondingly increase the overall thickness of the process device, thereby increasing the material cost or affecting the functions of other film layers.

[Substrate]

In one embodiment, the material of the substrate 130 may include polyethylene terephthalate (PET), polyimide (PI), polyether ether ketone (PEEK), polyethylene imine (PEI), polyamide (PA), polyethersulfone (PES), polyethylene naphthalate (PEN), wafer, glass, metal plate, fiberglass plate, ceramic plate, stacks of the above, or combinations thereof.

In one embodiment, the material of the substrate 130 may include silicon, silicon carbide, gallium nitride, aluminum oxide (Al ₂ O ₃ ), quartz or a material suitable for electronic component manufacturing. In one embodiment, the appearance of the substrate 130 may be the same as or similar to a circle, and its diameter may be, for example, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches, 12 inches, 14 inches, 15 inches, 16 inches, 20 inches or other appropriate specifications.

In one embodiment, the substrate 130 may include a wafer suitable for semiconductor processing (may be referred to as a semiconductor wafer; such as a silicon wafer). In this way, the process device 100 including the semiconductor wafer as the substrate 130 can be directly applied to electronic component related processes (such as chip probing (CP)).

In one embodiment, the thickness of the substrate 130 is between 12 microns and 2000 microns. In one embodiment, the thickness of the substrate 130 is between 150 microns and 1,800 microns; for example, between 750 microns and 800 microns. In one embodiment, the thickness of the substrate 130 may correspond to the thickness of a wafer used in a general electronic component-related process.

[Coating]

[Coating composition]

In this embodiment, the material used to form the coating layer 140 may include a resin, a bridge agent, and a cleaning material. That is, the material of the coating layer 140 may include a resin, a bridge agent, and a cleaning material.

In one embodiment, the aforementioned resin may include silicone resin, silicone rubber, polyurethane resin (PU resin), acrylic resin, or a mixture thereof.

In one embodiment, based on 100 weight units of the resin used, the amount of the bridging agent used (which may further include a corresponding catalyst) is approximately 5 to 50 parts by weight.

In one embodiment, the aforementioned bridging agent may include an amine bridging agent, an acid anhydride bridging agent, an organic peroxide bridging agent or a mixture thereof. In one embodiment, under the premise of using a bridging agent, a corresponding catalyst may be further used. The aforementioned catalyst may include a platinum catalyst.

In one embodiment, the amine crosslinker may include, for example, trialkylamine (such as triethylamine, tributylamine, etc.), aminopyridine (such as 4-dimethylaminopyridine), arylamine (such as benzyldimethylamine, 2,4,6-tris(dimethylaminomethyl)phenol) or a mixture thereof, but the present invention is not limited thereto.

In one embodiment, the anhydride bridge agent may include, for example, maleic anhydride, methyl tetrahydrophthalic anhydride (Methyl Tetrahydrophthalic Anhydride, MTHPA, CAS: 26590-20-5) or a mixture thereof, but the present invention is not limited thereto.

In one embodiment, the organic peroxide crosslinker may include, for example, benzoyl peroxide (BPO, CAS: 94-36-0), 2-(tert-butylperoxyisopropyl)benzene (BIBP, CAS: 25155-25-3/2212-81-9), or a mixture thereof, but the present invention is not limited thereto.

In one embodiment, the catalyst may include a platinum catalyst. The platinum catalyst may include, for example, platinum black, chloroplatinic acid, and organic platinum compounds (such as platinum diacetyl acetic acid, platinum (0)-1,3-diethenyl-1,1,3,3-tetramethyldisiloxane complexes; CAS: 68478-92-2). In one embodiment, under the premise that the resin includes an organic silicone resin or an organic silicone rubber, the presence of the platinum catalyst may enhance the corresponding degree of hardening.

In one embodiment, the aforementioned cleaning material may include organic silicone resin powder, organic silicone rubber powder, silicate mineral or a mixture thereof.

In one embodiment, the particle size of the cleaning material may be greater than or approximately equal to 0.05 microns, and less than or approximately equal to 10 microns. If the particle size of the cleaning material is too small (e.g., less than 0.05 microns), the corresponding surface area may be increased at the same weight ratio, but the corresponding friction may be reduced, which may reduce the cleaning effect. If the particle size of the cleaning material is too large (e.g., less than 10 microns), the corresponding surface area may be reduced at the same weight ratio, and the corresponding friction may be increased, which may reduce the cleaning effect and may increase the possibility of damage or damage to the corresponding object to be cleaned (e.g., probe).

In one embodiment, the amount of cleaning material used is about 5 to 200 parts by weight based on 100 parts by weight of the resin used. The amount of cleaning material added may affect the cohesion. If the addition ratio is low (e.g., the amount of cleaning material added is less than 5 parts by weight based on 100 parts by weight of the resin used), although the corresponding cohesion or resilience is better, the cleaning effect may be poor due to the low addition ratio. If the addition ratio is high (e.g., the amount of cleaning material added is greater than 200 parts by weight based on 100 parts by weight of the resin used), although the cleaning effect may be better due to the high addition ratio, the corresponding cohesion and resilience may be poor, and it is more inconvenient to use.

[How the coating is formed]

The coating 140 can be formed by coating and curing. The aforementioned curing method may include a thermal curing method and/or a light curing method, but the present invention is not limited thereto.

In one embodiment, the coating 140 may be formed as follows.

First, a gel, paste or liquid coating containing or mixed with resin, bridging agent and cleaning material can be applied to the substrate 130 by an appropriate method (e.g., coating with a scraper or other similar jig). The aforementioned coating can selectively use an appropriate organic solvent.

During the process of coating the substrate 130 with a suitable coating material and/or after the coating is completed, a first stage curing step and a second stage curing step may be performed.

The first stage curing step may include curing or semi-curing the coating on the substrate 130 by means of photothermal heating. The aforementioned photothermal heating may include, for example, photothermal heating with infrared light (IR). Compared with hot air heating, photothermal heating can be more uniformly heated, and the formed coating (such as coating 140) can have better flatness (such as having fewer bubbles, shrinkage holes (commonly known as: volcanic holes) or uneven drying; or, almost no aforementioned characteristics).

Since the photon energy of infrared light is relatively weak (compared to violet or ultraviolet light; compared to the bond energy of two bonding atoms in a polymer; and/or, compared to the energy required for a π bond in a polymer to be excited and correspondingly to a π* bond), infrared light basically does not induce the corresponding photochemical reaction, so the first stage of curing can be called thermal curing.

The second stage curing step may include placing the coating (which may be in an uncured state or a semi-cured state) coated on the substrate 130 in an oxygen-free environment and curing it by irradiating it with high-energy light. The oxygen-free environment, for example, places the entire object (e.g., the substrate 130 with the coating coated thereon) in an oxygen-free space (e.g., a nitrogen box); and/or, a corresponding isolation object (e.g., a release film) is further covered on the coating coated on the substrate 130. In addition, the aforementioned high-energy light refers to the energy corresponding to a single photon, for example, the high-energy light is violet light or ultraviolet light. Under the irradiation of high-energy light, oxygen may decompose into oxygen free radicals and/or generate ozone, and oxygen free radicals and/or ozone easily react with polymers in the resin to cause defects in the material. Therefore, curing the coating applied on the substrate 130 by irradiating high-energy light in an oxygen-free environment can improve the stability, strength and/or durability of the formed coating and/or the corresponding material.

Since the photon energy of violet or ultraviolet light is stronger (compared to infrared light; compared to the bond energy of two bonding atoms in a polymer; and/or, compared to the energy required for a π bond in a polymer to be excited and correspondingly to a π* bond), violet or ultraviolet light may promote the corresponding photochemical reaction (such as bridging reaction), so the second stage curing step can be called light curing.

In one embodiment, the aforementioned first stage curing step may be performed first; and then, the aforementioned second stage curing step may be performed. In one embodiment, the execution timing of the first stage curing step may overlap with the execution timing of the second stage curing step. For example, the second stage curing step may be performed when the first stage curing step is nearly completed but not yet completed. For another example, the second stage curing step may be performed once or multiple times during the first stage curing step. Of course, if necessary, the first stage curing step may also be performed in an oxygen-free environment.

In one embodiment, the coating 140 is cured only in the first stage, and the corresponding flatness (which can be determined by the arithmetic average roughness (Ra)) can be about 30 microns to 50 microns when the thickness is 150 microns to 300 microns.

In one embodiment, the coating 140 is formed by a method including the aforementioned first stage curing step and the aforementioned second stage curing step. In the corresponding case of a thickness of 150 microns to 300 microns, the corresponding flatness (which can be determined by the arithmetic average roughness (Ra)) can be smaller (e.g., less than or approximately equal to 30 microns).

In some electronic component-related processes, probes/probe cards are often used. When using probes/probe cards, they have corresponding compression (Over Drive, OD). Compression is an important parameter to control the contact between the probe/probe card and the object under test (such as a wafer or chip). The compression cannot exceed the maximum value specified by the supplier of the probe/probe card to avoid deformation of the probe/probe card due to excessive needle pressure. The compression cannot be too small to avoid the possibility that the probe/probe card does not contact the object under test. In general electronic component-related processes, considering the corresponding component process quality and the corresponding probe/probe card specifications, the compression is mostly set in the range of 30 microns to 80 microns.

Based on the above, when the process device 100 is used in-situ for cleaning the probe/probe card (i.e., without changing parameters such as compression or other similar conditions), the flatness of the coating 140 is less than or equal to 50 microns; preferably, less than or equal to 30 microns. In this way, the process device 100 can be used for cleaning the probe/probe card and/or the possibility of damage or destruction of the probe/probe card can be reduced.

[Effect of viscosity of coating material used to form coating]

In one embodiment, the viscosity of the coating used to form the coating layer 140 may be between 200 cps and 5,000 cps. The added ratio of the bridging agent and/or the cleaning material may have an effect on the viscosity of the coating.

If the proportion of the bridge agent added is too low (e.g., the bridge agent used is less than 5 parts by weight based on 100 weight units of the resin used), the viscosity of the corresponding coating may be lower (e.g., less than 200cps). Although the leveling property may be better, and the formed coating may have better flatness, it may be difficult to form it to an appropriate thickness at one time, and multiple processes may be required, which may increase the complexity or difficulty of the process. In addition, if the thickness is too low (e.g., the thickness is less than 150 microns), the corresponding cleaning ability may be reduced when using the probe. In addition, because the bridge density may be too low, it may cause the hardness to be softer, the recovery is poor during use, and the corresponding cleaning ability is reduced.

If the proportion of bridging agent added is too high (e.g., the amount of bridging agent used is greater than 50 parts by weight based on 100 parts by weight of the resin used), the viscosity of the corresponding coating may be higher (e.g., greater than 5,000 cps), so the amount used needs to be carefully controlled to avoid the thickness being too thick (e.g., greater than 300 microns). If the thickness is too thick, the possibility of the corresponding coating to have its own defects (e.g., debonding, residual glue, self-fracture or other similar mixed damage) may increase. In addition, since the viscosity may be higher, the corresponding leveling property may be poor, so the corresponding coating may have poor flatness. In addition, since the density of the bridge may be higher, it may cause the hardness to be higher, making it more difficult to insert the probe into it, which may reduce or eliminate the corresponding cleaning ability, and even cause damage or destruction to the probe.

If the proportion of cleaning material added is too low (e.g., the cleaning material used is less than 5 parts by weight based on 100 parts by weight of the resin used), the viscosity of the corresponding coating may be lower (e.g., less than 200cps). Similar to the above, although lower viscosity can improve leveling and make the formed coating have better flatness, it may be more difficult to form it to an appropriate thickness at one time, and multiple steps may be required, which may increase the complexity or difficulty of the process. If the thickness is too low (e.g., the thickness is less than 150 microns), the use of the probe may reduce the corresponding cleaning ability.

If the proportion of cleaning material added is too high (e.g., the amount of cleaning material used is greater than 200 parts by weight based on 100 parts by weight of the resin used), the viscosity of the corresponding coating may be higher (e.g., greater than 5,000cps). Similar to the above, higher viscosity requires more careful control of the amount used to avoid excessive thickness (e.g., thickness greater than 300 microns). In addition, since the viscosity may be higher, the corresponding leveling property may be poor, so the corresponding coating may have poor flatness.

[Hardness of coating and its corresponding effects]

In one embodiment, the Shore Hardness of the coating 140 is between 40A and 80A. In the aforementioned range, the hardness is moderate. Furthermore, if the object to be cleaned (such as a probe) is to be pierced into the coating 140 so that the coating 140 can adhere to the dust on the object to be cleaned, the coating 140 with a Shore Hardness between 40A and 80A is suitable for the object to be cleaned (such as a probe) to be pierced in a direction perpendicular to the surface of the coating 140.

In one embodiment, the Shore hardness can be tested by a commonly used standard method. For example, the Shore hardness can be tested by the standard test method/specification of ASTM D2240 or ISO 868 and converted or estimated.

In one embodiment, the hardness of the coating 140 may be related to the molecular structure and/or bridge structure therein.

Taking a resin or rubber material as an example, if its molecular structure has a longer carbon chain, its hardness may be relatively low. Taking a resin or rubber material as another example, if its molecular structure includes aromatic hydrocarbons or a structure with high steric hindrance (such as a bridged bicyclic group), its hardness may be relatively high.

The density of the bridge structure may be related to the ratio of the bridge agent to the resin. For the convenience of evaluation and/or formulation, in general polymer-related fields, the density relationship of the bridge structure can be evaluated by comparing the weight ratio of its bridge agent to the resin.

If the density of the bridge structure is too low (the bridge agent (which may further include the corresponding catalyst) is less than 5 parts by weight based on 100 parts by weight of the resin used), the cohesion of the corresponding coating may be lower; and/or the hardness of the corresponding coating may be lower (e.g., Shore hardness is less than 40A).

If the hardness of the coating is too low (e.g. Shore hardness is less than 40A), the recovery during use may be poor, which will reduce its cleaning ability.

If the density of the bridge structure is too high (the bridge agent (which may further include the corresponding catalyst) is greater than 50 parts by weight based on 100 parts by weight of the resin used), the cohesion of the corresponding coating may be higher; and/or the hardness of the corresponding coating may be higher (e.g., Shore hardness greater than 80A).

If the hardness of the coating is too high (e.g. Shore hardness greater than 80A), the probe may be more difficult to insert or penetrate, which will reduce its cleaning ability and even damage or destroy the probe.

[Elastic coefficient of coating and its corresponding influence]

In one embodiment, the elastic coefficient of the coating 140 is between 50kg/ ^cm2 and 300kg/ ^cm2 . Within the aforementioned range, the elasticity is moderate. Furthermore, if the object to be cleaned (e.g., a probe) is to be pierced into the coating 140 so that the coating 140 can adhere to the dust on the object to be cleaned, the coating 140 with an elastic coefficient between ^50kg /cm2 and 300kg/ ^cm2 may have better cleaning ability and more usable times.

In one embodiment, the elastic coefficient can be tested by a commonly used standard method. For example, the elastic coefficient can be tested by a standard test method/specification that is the same or similar to Young's modulus, and converted or estimated.

In one embodiment, the elasticity of the coating 140 may be related to the properties of the material therein and/or the corresponding proportional relationship.

Taking resin material or rubber material as an example, in one embodiment, the weight average molecular weight of the resin/rubber used in the coating 140 may be between 20,000 g/mol and 1,500,000 g/mol. If the molecular weight is too low (e.g., the weight average molecular weight is less than 20,000 g/mol), the corresponding elastic coefficient may be lower due to poor cohesion. If the molecular weight is too high (e.g., the weight average molecular weight is greater than or approximately equal to 20,000 g/mol), the corresponding elastic coefficient may be higher due to better cohesion.

In one embodiment, if the overall ratio of the corresponding resin/rubber, bridging agent and cleaning material and other corresponding characteristics (such as the difficulty of the formation method, the moderate viscosity of the coating or the moderate hardness) or efficacy are further considered, the weight average molecular weight of the resin/rubber used in the coating 140 can be about 20,000 g/mol to 1,000,000 g/mol.

Taking resin or rubber materials as an example, in one embodiment, the glass transition temperature (Tg) of the resin/rubber used in the coating 140 may be greater than or approximately equal to -60°C. If the glass transition point is too low (e.g., the glass transition point is less than -60°C), the corresponding elastic modulus may be lower due to poor cohesion, and the resulting coating may have poor temperature resistance. If the glass transition point is too high (e.g., the glass transition point is greater than or approximately equal to -60°C), the corresponding elastic modulus may be higher due to better cohesion, and the resulting coating may have better temperature resistance.

In one embodiment, if the overall ratio of the corresponding resin/rubber, bridge agent and cleaning material and other corresponding characteristics (such as the difficulty of the formation method, the moderate viscosity of the coating or the moderate hardness) or efficacy are further considered, the glass transition temperature (Tg) of the resin/rubber used in the coating 140 can be between -60°C and -20°C.

In one embodiment, the process device 100 can be used as a probe card clean pad or a probe pin clean pad, but the present invention is not limited thereto. However, it is worth noting that the present invention does not limit the use of the process device 100 of any of the aforementioned embodiments.

The method for cleaning the probe may include the following steps. Step 1: Testing the electronic component by the probe. Step 2: After the aforementioned step 1, cleaning the probe by the process device 100 of any of the aforementioned embodiments.

The cleaning method of the probe is exemplified as follows. FIG. 2 is a side view schematic diagram according to a commonly used test method. FIG. 3A to FIG. 3D are side view schematic diagrams of a process device according to an embodiment of the present invention performing a cleaning or decontamination process.

Please refer to FIG. 2 , the electrical properties of the electronic component 300 can be tested by a probe 91 in a commonly used testing method.

The electronic component 300 is, for example, a semiconductor wafer, which may have a corresponding conductive terminal 320. The conductive terminal 320 may be a solder ball or a contact pad. Wafer probing (CP) is an important test for verifying the product yield of bare die (before packaging) on the semiconductor wafer (which may be a finished product or a semi-finished product) during the manufacturing process. In the process of bare die testing, the test is often performed by a corresponding probe card 90. The probe card 90 includes a probe pin 91. The probe pin 91 contacts the contact pad 320 during the test process to transmit a corresponding electrical signal for testing. Therefore, during the contact between the probe 91 and the conductive terminal 320, some materials on the conductive terminal 320 (such as the solder forming the conductive terminal or the gold, silver, aluminum, zinc or copper forming the contact pad, but not limited to) may adhere to the probe 91.

It is worth noting that FIG. 2 only illustrates or describes a commonly used test method, and does not limit or elaborate on it in the present invention. For example, the test method may be a final test (FT).

Figures 3A to 3D are schematic side views of a process device for cleaning or decontamination according to an embodiment of the present invention. In addition, for the sake of clarity, Figures 3A to 3D are drawn and described in correspondence with the area near the end of the probe 91.

For example, after the exemplary test in FIG. 2 , the probe 91 can be cleaned by the process device 100 in a similar manner.

In one embodiment, during the process of separating the conductive terminal 320 from the probe 91, some materials on the conductive terminal 320 (such as the solder forming the conductive terminal or the gold, silver, aluminum, zinc or copper forming the contact pad, but not limited to) may be peeled off and attached to the probe 91.

As shown in FIG. 3B , the process device 100 can be placed in a place that is the same as or similar to the place where the electronic component 300 (as shown in FIG. 2 ) is placed, so that the process device 100 can be used to clean the probe 91. For example, as shown in FIGS. 3B to 3C , the process device 100 can be brought into contact with the probe 91 in the same or similar manner as the aforementioned test method, so that the substance 99 (such as solder, gold, silver, aluminum, zinc, copper or possible contamination) attached to the probe 91 is adhered by the coating 140 of the process device 100. Thereafter, as shown in FIGS. 3C to 3D , the process device 100 can be separated from the probe 91, and the substance 99 attached to the probe 91 can be reduced by the process device 100.

It is worth noting that only one method of cleaning the probe pin 91 is exemplarily introduced in FIG. 3A to FIG. 3D, and the novel creation does not limit the type of the probe pin 91. For example, in FIG. 2 or FIG. 3A to FIG. 3D, the probe pin 91 shown is a vertical probe pin, but the novel creation is not limited thereto. In an embodiment not shown, the process device 100 of any of the aforementioned embodiments of the novel creation can also be used to clean a cantilever probe pin in a manner similar to a general test method.

In summary, in the process device of the present invention and the cleaning method of the probe by the aforementioned process device, since the coating can be suitable for sticking the material on the probe, it can be suitable for cleaning the probe and can reduce the scratches of the probe; and/or, the process device of the present invention can have more effective use times.

100: Process equipment

110: Release layer

120: Adhesive layer

130: Substrate

140:Coating

Claims (10)

A process device includes: a substrate; and a coating layer located on the substrate, wherein the coating layer includes a resin, a bridge agent, and a cleaning material, wherein: based on 100 weight units of the resin, the bridge agent is 5 to 50 weight parts; based on 100 weight units of the resin, the cleaning material is 5 to 200 weight parts. A process device as described in claim 1, wherein the Shore Hardness of the coating is between 40 A and 80 A. The process apparatus as claimed in claim 1, wherein the elastic coefficient of the coating is between 50 kg/cm ² and 300 kg/cm ² . A process device as described in claim 1, wherein the flatness of the coating is less than or equal to 50 microns. A process apparatus as described in claim 1, wherein the molecular weight of the resin is between 20,000 g/mol and 1,500,000 g/mol. A process device as described in claim 1, wherein the glass transition point of the resin is greater than or equal to -60°C. The process device as described in claim 1, wherein the coating is formed by applying a coating on the substrate and curing the coating, wherein the viscosity of the coating is between 200cps and 5,000cps. The process device as described in claim 1, wherein the coating layer is formed by applying a coating material on the substrate and curing it, wherein the curing step includes a thermal curing step and a photocuring step. A process apparatus as described in claim 8, wherein the thermal curing step is performed by heating with infrared light. A process apparatus as described in claim 8, wherein the photocuring step is performed in an oxygen-free environment.

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