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TWI649735B - 用於電致發光顯示器的電流補償方法與元件 - Google Patents

用於電致發光顯示器的電流補償方法與元件 Download PDF

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Publication number
TWI649735B
TWI649735B TW106139160A TW106139160A TWI649735B TW I649735 B TWI649735 B TW I649735B TW 106139160 A TW106139160 A TW 106139160A TW 106139160 A TW106139160 A TW 106139160A TW I649735 B TWI649735 B TW I649735B
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Taiwan
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TW106139160A
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TW201818387A (zh
Inventor
嚴逸緯
Yi Wei Yan
嚴進嶸
Chin-Rung Yan
賴彥任
Yen-Jen Lai
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創王光電股份有限公司
Int Tech Co., Ltd.
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    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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Abstract

本揭露係關於一種用於電致發光(EL)顯示器的電流補償方法。該電流補償方法包含量測一像素單元的一光強度，若所量測的光強度超過一預定閥值則將一像素單元辨識為需要補償，判定一補償電流的大小，以及提供一影像資料至該辨識的像素單元，其中該影像資料係對應於該補償電流的大小。

Description

用於電致發光顯示器的電流補償方法與元件
本揭露係關於一種用於電致發光顯示器的電流補償方法與元件
主動陣列有機發光二極體(active matrix organic light emitting diode，AMOLED)顯示器中，每一像素單元包含儲存資料的電容器，因而像素單元可維持在照明狀態。此驅動機制適合發展大尺寸、高解析度顯示器。因此，AMOLED在先進顯示器(例如可撓式顯示器)之研究與發展中變得越來越重要。對於OLED元件，其發光決定於流經OLED元件的電流強度，而OLED元件的電流強度決定於OLED元件的閥值電壓Vth。對於包括複數個OLED元件的顯示器，不同的OLED元件之間的電流強度可因Vth的差異而不同，造成跨越像素單元之不均勻發光。閥值差異可能係由製造參數或元件老化而造成。
本揭露的實施例提供一種電致發光(EL)顯示器的電流補償方法。該電流補償方法包含量測一像素單元的一光強度；若該光強度超過一預定閥值，則將該像素單元辨識為需要補償；判定一補償電流的大小；以及提供一影像資料至該像素單元，其中該影像資料係對應於該補償電流的大小。
在一實施例中，該電流補償方法另包含在量測該像素單元的該光強度之前，提供一預定灰階的一影像資料至欲量測的該像素單元。
在另一實施例中，該像素單元的辨識另包括比較所量測的該光強度與該預定灰階。
在另一實施例中，判定一補償電流的大小另包含計算所量測的該光強度與該預定灰階之間的差；以及將該差轉換為該補償電流的大小。
在另一實施例中，該電流補償方法另包含判定需要補償的該像素單元之位置。
在另一實施例中，該像素單元係由一閘極驅動器積體電路(integrated circuit，IC)與一源極驅動器IC驅動，該電流補償方法另包含將該像素單元之該位置的資訊提供至該閘極驅動器IC；以及將該補償電流的大小的資訊提供至該源極驅動器IC。
本揭露的一些實施例提供一種電流補償方法。該電流補償方法包含獲得一行動裝置的一顯示器之即時雲紋(mura)影像資料，將該即時雲紋影像資料儲存於該行動裝置的一記憶體中；以及基於該即時雲紋影像資料而判定需要補償的像素。
在一實施例中，獲得一行動裝置的一顯示器之即時雲紋(mura)影像資料包含拍攝該行動裝置的該顯示器顯示之一影像的一照片。
在另一實施例中，該電流補償方法另包含將該記憶體中的一原始雲紋影像資料更新為該即時雲紋影像資料。
在另一實施例中，該原始雲紋影像資料係於製造該行動裝置時儲存於該記憶體中。
在另一實施例中，該原始雲紋影像資料包含先前儲存的雲紋影像資料。
在另一實施例中，該記憶體包含一快閃IC。
本揭露的一些實施例提供一種電致發光(EL)顯示器。該顯示器包含一基板、位於該基板上方的一EL元件層、以及位於該基板上方的一光學感測層。該EL元件層包含一些EL元件。該光學感測層包含配置於一第一方向的多個第一感測器以及配置於一第二方向的多個第二感測器，該等第一感測器與該等第二感測器於交叉點彼此交叉。該光學感測層係經配置以藉由偵測每一個交叉點之來自一參考點的阻抗(impedance)而辨識該EL元件層之待補償的一區域。
在一實施例中，該基板包含低溫多晶矽(low temperature polysilicon，LTPS)基板與銦鎵鋅氧化物(indium gallium zinc oxide，IGZO)基板其中之一。
在另一實施例中，該EL元件包含有機發光二極體(organic light emitting diode，OLED)、微LED(micro LED)與量子點LED(quantum dot LED，QLED)其中之一。
在另一實施例中，該光學感測層與該基板具有相同尺寸。
在另一實施例中，該光學感測層係由一相對高透明材料製成。
在另一實施例中，該EL顯示器另包含一量測模組，經配置以量測一EL元件的一光強度。此外，該EL顯示器包含一分析模組，經配置為若所量測的該光強度超過一預定閥值則將一EL元件辨識為需要補償。再者，該EL顯示器包含一計算模組，經配置以判定該辨識的EL元件之一補償電流的大小。
20‧‧‧系統
21‧‧‧電流補償元件
26‧‧‧顯示器
30‧‧‧EL顯示器
31‧‧‧基板
32‧‧‧EL元件層
33‧‧‧光學感測層
51‧‧‧第一感測器
52‧‧‧第二感測器
60‧‧‧系統
61‧‧‧照相機
62‧‧‧即時雲紋影像資料
64‧‧‧處理器
66‧‧‧驅動器IC
67‧‧‧行動裝置
68‧‧‧記憶體
210‧‧‧控制器
212‧‧‧量測模組
215‧‧‧分析模組
217‧‧‧記憶體
218‧‧‧計算模組
260‧‧‧像素單元矩陣
264‧‧‧驅動器IC
320‧‧‧區域
680‧‧‧原始雲紋影像資料
為協助讀者達到最佳理解效果，建議在閱讀本揭露時同時參考附件圖示及其詳細文字敘述說明。請注意為遵循業界標準作法，本專利說明書中的圖式不一定按照正確的比例繪製。在某些圖式中，尺寸可能刻意放大或縮小，以協助讀者清楚了解其中的討論內容。
圖1為流程圖，例示本揭露實施例之用於電致發光(EL)顯示器中的電流補償方法。
圖2為方塊圖，例示本揭露實施例之包括電流補償元件的系統。
圖3為剖面圖，例示本揭露實施例之EL顯示器。
圖4為示意圖，例示本揭露實施例圖3所示之EL顯示器中的光學感測層之功能。
圖5A與圖5B為示意圖，例示本揭露實施例圖3所示之EL顯示器中的光學感測層。
圖6A為示意圖，例示本揭露實施例之獲得雲紋(mura)即時影像資料之系統。
圖6B為方塊示意圖，例示本揭露實施例之更新雲紋影像資料之方法。
圖7為流程圖，例示本揭露實施例之用於電致發光(EL)顯示器的電流補償方法。
本揭露提供了數個不同的實施方法或實施例，可用於實現本發明的不同特徵。為簡化說明起見，本揭露也同時描述了特定零組件與佈置的範例。請注意提供這些特定範例的目的僅在於示範，而非予以任何限制。舉例而言，在以下說明第一特徵如何在第二特徵上或上方的敘述中，可能會包括某些實施例，其中第一特徵與第二特徵為直接接觸，而敘述中也可能包括 其他不同實施例，其中第一特徵與第二特徵中間另有其他特徵，以致於第一特徵與第二特徵並不直接接觸。此外，本揭露中的各種範例可能使用重複的參考數字和/或文字註記，以使文件更加簡單化和明確，這些重複的參考數字與註記不代表不同的實施例與/或配置之間的關聯性。
再者，應理解當稱元件「連接至」或「耦合至」另一元件時，其可直接連接或耦合至另一元件，或是可有其他中間元件存在。
圖1為流程圖，例示本揭露實施例之用於電致發光(EL)顯示器之電流補償方法。
參閱圖1，在操作11中，量測顯示器中的每一個像素單元的光強度。顯示器可包含電致發光(EL)顯示器，例如主動陣列有機發光二極體(active matrix organic light emitting diode，AMOLED)顯示器。再者，顯示器可包含像素單元、閘極驅動器積體電路(integrated circuit，IC)與源極驅動器IC。像素單元經配置為NxM矩陣。閘極驅動器IC選擇N列像素單元中的一或多列的像素單元，而源極驅動器提供像素資料至M行像素單元中之所選擇的像素單元。各個像素單元包含EL元件。EL元件可包含例如電流驅動的元件，其可另包含有機發光二極體(organic light emitting diode，OLED)、微LED或量子點LED(quantum dot LED，QLED)。
像素單元的光強度為流經像素單元之EL元件的電流之函數。再者，由於EL元件的Vth之變異，不同的像素單元具有不同的強度。在一實施例中，為了量測強度，自源極驅動器IC提供預定灰階的影像資料至像素單元。
接著，在操作12中，基於每一個像素單元中所量測的光強度，判定跨越像素單元之陣列的電流分佈是否均勻。在一實施例中，若像素單元之所 量測的強度相較於預定灰階為超過預定閥值，則像素單元被辨識為需要電流補償的像素單元。
若在操作12中判定電流分佈為均勻，則在操作13中，更新雲紋(mura)的狀態。通常，雲紋效應(Mura effect)是指像素i單元之不完美照明造成的不均勻顯示表面。雲紋效應可能看起來更亮或較暗，飽和度較低，對比度較差，或者來自一般顯示器呈現的偏離區域、點或像素。
因此，若操作12中電流分佈不均勻，則在操作14中，判定操作12所辨識的像素之位置。
在操作15中，判定值得注意的像素單元(亦即操作12中所辨識的像素單元)之補償電流大小。在一實施例中，計算所量測之強度與預定灰階之間的偏移(offset)以判定補償的量。而後，將補償的量轉換為對應於補償電流之大小的影像資料。
在操作16中，將值得注意的像素單元之補償電流大小的資訊提供至源極驅動器IC。此外，在操作17中，將值得注意的像素單元之位置的資訊提供至閘極驅動器IC。
接著，在操作18中，基於該影像資料，補償值得注意的像素單元。
圖2為方塊圖，例示本揭露實施例之包括電流補償元件21的系統20。
參閱圖2，系統20包含顯示器26與電流補償元件21。顯示器26(其可為EL顯示器)包含像素單元矩陣260與驅動器IC 264。經配置用以補償顯示器26之不均勻電流分佈的電流補償元件21係包含控制器210、量測模組212、分析模組215、計算模組218與記憶體217。
在控制器210控制下的量測模組212係量測像素單元陣列260的光強度。在操作中，控制器210命令驅動器IC 264提供預定灰階的影像資料至像 素單元陣列260，以利於量測模組212的量測。預定灰階的值可儲存於記憶體217中。
響應量測結果，分析模組215藉由例如比較所量測強度與預定灰階而判定像素單元是否需要被補償。若此像素單元經辨識，則所辨識之像素單元的位置係儲存於記憶體217中。
計算模組218基於所量測強度與預定灰階之間的差異而判定補償的量，而後將補償的量轉換為對應於補償電流大小的影像資料。
控制器210基於經辨識的像素單元之位置與補償電流大小的資訊而命令驅動器IC提供影像資料至該位置的像素單元。
在一些實施例中，電流補償元件21可合併於顯示器26中，如圖3至圖5所示。
圖3為剖面圖，例示本揭露實施例之EL顯示器30。
參閱圖3，EL顯示器30包含基板31、EL元件層32以及光學感測層33。基板31可包含低溫多晶矽(low temperature polysilicon，LTPS)基板或銦鎵鋅氧化物(indium gallium zinc oxide，IGZO)基板。位於基板31與光學感測層33之間的EL元件層32係包含EL元件，其包含OLED、微LED、或量子點LED(QLED)。光學感測層33經配置以偵測EL元件層32中是否發生不均勻照明，例如Mura效應，以及若有，則判定EL元件層32中值得注意的區域。在一實施例中，光學感測器33整合至EL顯示器30的觸控面板(未繪示)中。
圖4為示意圖，例示本揭露實施例圖3所示之EL顯示器30中的光學感測層33之功能。
參閱圖4，EL元件層32中的區域320被偵測為不均勻照明區域(虛線箭號所示)之區域。為了偵測不均勻照明區域，對於EL顯示器30中的像素單元提供預定灰階值。光學感測層33中的感測器偵測是否有值得注意的區域，若有，則將該值得注意的區域之位置與光強度的光學差異報告至控制器。該區域可以和單一像素單元一樣小，或是和整個像素單元陣列一樣大。接著，轉換器將光學差異轉換為影像資料。控制器基於該影像資料而命令驅動器IC調整值得注意的該區域。補償方法與元件類似於圖1與圖2所示與所述之補償方法與元件，因而不再說明。
圖5A與圖5B為示意圖，例示本揭露實施例圖3所示之EL顯示器30中的光學感測層33。
參閱圖5A，光學感測層33包含第一感測器51與第二感測器52。第一感測器51延伸於第一方向，而第二感測器52延伸於第二方向，第二方向實質垂直於第一方向。因此，第一感測器51與第二感測器52在交叉點處彼此交叉。在一實施例中，光學感測層33與EL顯示器30的觸控面板具有實質相同的尺寸。再者，光學感測層33係由相對高透明材料製成以避免觸控面板的光學損失。光學感測層33中的第一感測器51與第二感測器52偵測來自參考點的每個交叉點的電阻。EL顯示器30的使用者可預定參考點。交叉點的電阻和交叉點與參考點之間的距離存在線性關係。然而，對於非均勻照明區域，例如圖5B所示之區域320，可能沒有這樣的線性關係存在。據此，當EL元件層32發光時，偵測到非均勻照明區域。將值得注意的區域之位置與對應於光學差異量的影像資料傳送至驅動器IC，以補償值得注意的該區域。
圖5B說明藉由非均勻照明區域而獲得雲紋(mura)影像資料的方法。在其他的實施例中，如圖6A與圖6B所示，可藉由拍攝顯示元件顯示的影像而即時獲得雲紋的影像資料。
圖6A為示意圖，例示本揭露實施例之即時獲得雲紋影像資料的系統60。
參閱圖6A，系統60包含照相機61與行動裝置67。可包含單眼相機、數位相機或手機相機的照相機61係經配置以獲得行動裝置67之雲紋的影像資料。市售的照相機具有約1.2百萬像素或更高的解析度，足以支援系統60。在操作中，行動裝置67通電以供照相機61拍攝行動裝置67顯示之影像的照片。系統60減輕來自環境光的光學干擾，並且便於調整x、y與z座標，以確保雲紋影像資料的品質。
圖6B為方塊示意圖，例示本揭露實施例之更新雲紋的影像資料的方法。
參閱圖6B，將照相機61獲得的即時雲紋影像資料62傳送至行動裝置67。在本實施例中，行動裝置67的主板上的處理器64接收即時雲紋影像資料62，並且判定行動裝置67之顯示器中的非均勻照明區域(若有)。而後，將即時雲紋影像62經由驅動器IC 66儲存於記憶體68(例如快閃IC)中，並且可更新記憶體68中的原始雲紋影像資料680。在一實施例中，原始雲紋影像資料680係指製造商於製造行動裝置67時已儲存於記憶體68中的資料。在另一實施例中，原始雲紋影像資料680係指先前儲存的即時雲紋影像資料。當行動裝置67已經使用了一段時間時，原始雲紋影像資料680(特別是由製造商儲存的原始雲紋影像資料)可能無法反映雲紋的當前狀態。因此， 雲紋的當前狀態可能顯著不同於原始儲存的狀態。藉由更新的雲紋影像資料，可對於非均勻照明區域中的像素進行更精準的補償。
圖7為流程圖，例示本揭露實施例之用於電致發光(EL)顯示器的電流補償方法。
參閱圖7，該方法類似於圖1所示的方法，差別在於操作71、72與73。在操作71中，獲得行動裝置的即時雲紋影像資料。接著，在操作72中，將即時雲紋影像資料儲存於行動裝置的記憶體中，並且更新原始雲紋影像資料。接著，在操作73中，判定電流分佈是否均勻。在上述操作中，還比較了即時雲紋影像資料與原始雲紋影像資料，並且從比較結果得知在即時雲紋影像資料中分佈在照明區域的像素單元的光強度大小是否發生改變，也就是透過比較結果量測一像素單元的一光強度，以判定電流分佈是否均勻。若是，則當需要時，重複操作71與72。若否，則可進行如圖1所示與前述之操作14至18的補償程序。
前述內容概述一些實施方式的特徵，因而熟知此技藝之人士可更加理解本揭露之各方面。熟知此技藝之人士應理解可輕易使用本揭露作為基礎，用於設計或修飾其他製程與結構而實現與本申請案所述之實施例具有相同目的與/或達到相同優點。熟知此技藝之人士亦應理解此均等架構並不脫離本揭露揭示內容的精神與範圍，並且熟知此技藝之人士可進行各種變化、取代與替換，而不脫離本揭露之精神與範圍。

Claims (20)

  1. 一種電致發光(electroluminescent，EL)顯示器的電流補償方法，包括：量測一像素單元的一光強度；若該光強度超過一預定閥值，則將該像素單元辨識為需要電流補償；判定一補償電流的大小；以及提供一影像資料至該像素單元，其中該影像資料係對應於該補償電流的大小。
  2. 如請求項1所述之電流補償方法，另包括：在量測該像素單元的該光強度之前，提供一預定灰階的一影像資料至欲量測的該像素單元。
  3. 如請求項2所述之電流補償方法，其中該像素單元的辨識另包括：比較所量測的該光強度與該預定灰階。
  4. 如請求項2所述之電流補償方法，其中判定一補償電流的大小另包括：計算所量測的該光強度與該預定灰階之間的差；以及將該差轉換為該補償電流的大小。
  5. 如請求項1所述之電流補償方法，另包括：判定需要補償的該像素單元之位置。
  6. 如請求項5所述之電流補償方法，其中該像素單元係由一閘極驅動器積體電路(integrated circuit，IC)與一源極驅動器IC驅動，另包括：將該像素單元之該位置的資訊提供至該閘極驅動器IC；以及將該補償電流的大小的資訊提供至該源極驅動器IC。
  7. 一種電流補償方法，包括：獲得一行動裝置的一顯示器之即時雲紋(mura)影像資料；將該即時雲紋影像資料儲存於該行動裝置的一記憶體中；以及基於該即時雲紋影像資料而判定需要補償的像素。
  8. 如請求項7所述之電流補償方法，其中獲得一行動裝置的一顯示器之即時雲紋(mura)影像資料包括：拍攝該行動裝置的該顯示器顯示之一影像的一照片。
  9. 如請求項7所述之電流補償方法，另包括：將該記憶體中的一原始雲紋影像資料更新為該即時雲紋影像資料。
  10. 如請求項9所述之電流補償方法，其中該原始雲紋影像資料係於製造該行動裝置時儲存於該記憶體中。
  11. 如請求項9所述之電流補償方法，其中該原始雲紋影像資料包含先前儲存的雲紋影像資料。
  12. 如請求項7所述之電流補償方法，其中該記憶體包含一快閃IC。
  13. 一種電致發光(EL)顯示器，包括：一基板；一EL元件層，位於該基板上方，該EL元件層包含一些EL元件；以及一光學感測層，位於該基板上方，該光學感測層包含配置於一第一方向的多個第一感測器以及配置於一第二方向的多個第二感測器，該等第一感測器與該等第二感測器於交叉點彼此交叉，其中該光學感測層係經配置以藉由偵測每一個交叉點之來自一參考點的阻抗(impedance)而辨識該EL元件層之待補償的一區域。
  14. 如請求項13所述之EL顯示器，其中該基板包含低溫多晶矽(low temperature polysilicon，LTPS)基板與銦鎵鋅氧化物(indium gallium zinc oxide，IGZO)基板其中之一。
  15. 如請求項13所述之EL顯示器，其中該EL元件包含有機發光二極體(organic light emitting diode，OLED)、微LED(micro LED)與量子點LED(quantum dot LED，QLED)其中之一。
  16. 如請求項13所述之EL顯示器，其中該光學感測層與該EL顯示器的一觸控面板具有相同尺寸。
  17. 如請求項13所述之EL顯示器，其中該光學感測層係由一相對高透明材料製成。
  18. 如請求項13所述之EL顯示器，另包括一量測模組，經配置以量測流經一EL元件的一電流。
  19. 如請求項18所述之EL顯示器，另包括一分析模組，經配置為若所量測的該電流的一函數所對應之一光強度超過一預定閥值則將一EL元件所對應的一像素單元辨識為需要補償。
  20. 如請求項19所述之EL顯示器，另包括一計算模組，經配置以判定該辨識的像素單元之一補償電流的大小。
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