[go: up one dir, main page]

TW200739580A - Nonvolatile semiconductor memory device - Google Patents

Nonvolatile semiconductor memory device

Info

Publication number
TW200739580A
TW200739580A TW096101022A TW96101022A TW200739580A TW 200739580 A TW200739580 A TW 200739580A TW 096101022 A TW096101022 A TW 096101022A TW 96101022 A TW96101022 A TW 96101022A TW 200739580 A TW200739580 A TW 200739580A
Authority
TW
Taiwan
Prior art keywords
resistive
load
characteristic
resistive element
variable
Prior art date
Application number
TW096101022A
Other languages
English (en)
Other versions
TWI321792B (zh
Inventor
Yasunari Hosoi
Nobuyoshi Awaya
Isao Inoue
Original Assignee
Sharp Kk
Nat Inst Of Advanced Ind Scien
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk, Nat Inst Of Advanced Ind Scien filed Critical Sharp Kk
Publication of TW200739580A publication Critical patent/TW200739580A/zh
Application granted granted Critical
Publication of TWI321792B publication Critical patent/TWI321792B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/32—Material having simple binary metal oxide structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/76—Array using an access device for each cell which being not a transistor and not a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
TW096101022A 2006-01-13 2007-01-11 Nonvolatile semiconductor memory device TW200739580A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006006738A JP4203506B2 (ja) 2006-01-13 2006-01-13 不揮発性半導体記憶装置及びその書き換え方法

Publications (2)

Publication Number Publication Date
TW200739580A true TW200739580A (en) 2007-10-16
TWI321792B TWI321792B (zh) 2010-03-11

Family

ID=38256247

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096101022A TW200739580A (en) 2006-01-13 2007-01-11 Nonvolatile semiconductor memory device

Country Status (6)

Country Link
US (1) US7433222B2 (zh)
JP (1) JP4203506B2 (zh)
KR (1) KR100952088B1 (zh)
CN (1) CN101371313B (zh)
TW (1) TW200739580A (zh)
WO (1) WO2007080840A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI420523B (zh) * 2008-10-10 2013-12-21 Toshiba Kk 半導體記憶裝置
TWI581266B (zh) * 2015-01-21 2017-05-01 力旺電子股份有限公司 電阻式記憶體的記憶胞陣列

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7884349B2 (en) * 2002-08-02 2011-02-08 Unity Semiconductor Corporation Selection device for re-writable memory
US20060171200A1 (en) 2004-02-06 2006-08-03 Unity Semiconductor Corporation Memory using mixed valence conductive oxides
US7359236B2 (en) * 2005-03-11 2008-04-15 Adesto Technologies Read, write and erase circuit for programmable memory devices
US20130082232A1 (en) 2011-09-30 2013-04-04 Unity Semiconductor Corporation Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells
JP4313372B2 (ja) * 2005-05-11 2009-08-12 シャープ株式会社 不揮発性半導体記憶装置
US7479811B2 (en) * 2005-09-08 2009-01-20 Mediatek Inc. Sample/hold circuit module
US7499304B2 (en) * 2006-07-31 2009-03-03 Sandisk 3D Llc Systems for high bandwidth one time field-programmable memory
US7495947B2 (en) * 2006-07-31 2009-02-24 Sandisk 3D Llc Reverse bias trim operations in non-volatile memory
US7522448B2 (en) * 2006-07-31 2009-04-21 Sandisk 3D Llc Controlled pulse operations in non-volatile memory
US7719874B2 (en) * 2006-07-31 2010-05-18 Sandisk 3D Llc Systems for controlled pulse operations in non-volatile memory
US7499355B2 (en) * 2006-07-31 2009-03-03 Sandisk 3D Llc High bandwidth one time field-programmable memory
US7492630B2 (en) * 2006-07-31 2009-02-17 Sandisk 3D Llc Systems for reverse bias trim operations in non-volatile memory
KR100843210B1 (ko) * 2006-11-02 2008-07-02 삼성전자주식회사 저항 메모리 소자 및 데이터 기입 방법
JP4745395B2 (ja) * 2006-11-17 2011-08-10 パナソニック株式会社 抵抗変化型記憶装置
JP4088324B1 (ja) * 2006-12-08 2008-05-21 シャープ株式会社 不揮発性半導体記憶装置
US7400521B1 (en) * 2007-01-12 2008-07-15 Qimoda Ag Integrated circuit, memory chip and method of evaluating a memory state of a resistive memory cell
JP4221031B2 (ja) * 2007-02-09 2009-02-12 シャープ株式会社 不揮発性半導体記憶装置及びその書き換え方法
KR101317755B1 (ko) * 2007-03-23 2013-10-11 삼성전자주식회사 문턱 스위칭 특성을 지니는 저항체를 포함하는 비휘발성메모리 소자, 이를 포함하는 메모리 어레이 및 그 제조방법
JP4288376B2 (ja) * 2007-04-24 2009-07-01 スパンション エルエルシー 不揮発性記憶装置およびその制御方法
US20080278988A1 (en) * 2007-05-09 2008-11-13 Klaus Ufert Resistive switching element
US7990754B2 (en) * 2007-06-01 2011-08-02 Panasonic Corporation Resistance variable memory apparatus
JP5164745B2 (ja) * 2007-09-03 2013-03-21 株式会社半導体エネルギー研究所 記憶装置
WO2009034687A1 (ja) 2007-09-10 2009-03-19 Panasonic Corporation 不揮発性記憶装置および不揮発性記憶装置へのデータ書込方法
WO2009041041A1 (ja) 2007-09-28 2009-04-02 Panasonic Corporation 不揮発性記憶素子及び不揮発性半導体記憶装置、並びにそれらの読み出し方法及び書き込み方法
CN101627438B (zh) 2007-10-29 2013-10-09 松下电器产业株式会社 非易失性存储装置以及非易失性数据记录介质
JP5050813B2 (ja) * 2007-11-29 2012-10-17 ソニー株式会社 メモリセル
JP5121439B2 (ja) * 2007-12-26 2013-01-16 株式会社東芝 不揮発性半導体記憶装置
US20110006278A1 (en) * 2008-01-28 2011-01-13 Kensuke Takahashi Variable resistance non-volatile memory device and method for manufacturing the same
JP4719233B2 (ja) * 2008-03-11 2011-07-06 株式会社東芝 不揮発性半導体記憶装置
JP2009271999A (ja) 2008-05-07 2009-11-19 Toshiba Corp 抵抗変化メモリ装置
US8094485B2 (en) 2008-05-22 2012-01-10 Panasonic Corporation Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effect
JP5171955B2 (ja) * 2008-08-29 2013-03-27 株式会社東芝 多値抵抗変化型メモリ
WO2010026653A1 (ja) * 2008-09-05 2010-03-11 株式会社 東芝 記憶装置
WO2010026655A1 (ja) * 2008-09-05 2010-03-11 株式会社 東芝 記憶装置
WO2010026654A1 (ja) * 2008-09-05 2010-03-11 株式会社 東芝 記憶装置
JP4751432B2 (ja) 2008-09-26 2011-08-17 シャープ株式会社 半導体記憶装置
US8345465B2 (en) * 2008-09-30 2013-01-01 Panasonic Corporation Driving method of variable resistance element, initialization method of variable resistance element, and nonvolatile storage device
WO2010042732A2 (en) * 2008-10-08 2010-04-15 The Regents Of The University Of Michigan Silicon-based nanoscale resistive device with adjustable resistance
US9030867B2 (en) * 2008-10-20 2015-05-12 Seagate Technology Llc Bipolar CMOS select device for resistive sense memory
EP2351083B1 (en) 2008-10-20 2016-09-28 The Regents of the University of Michigan A silicon based nanoscale crossbar memory
WO2010047068A1 (ja) 2008-10-21 2010-04-29 パナソニック株式会社 不揮発性記憶装置及びそのメモリセルへの書き込み方法
US8289748B2 (en) * 2008-10-27 2012-10-16 Seagate Technology Llc Tuning a variable resistance of a resistive sense element
JP4653833B2 (ja) 2008-11-04 2011-03-16 シャープ株式会社 不揮発性半導体記憶装置及びその制御方法
JP4531863B2 (ja) 2008-11-19 2010-08-25 パナソニック株式会社 不揮発性記憶素子および不揮発性記憶装置
JP5134522B2 (ja) * 2008-12-16 2013-01-30 シャープ株式会社 不揮発性半導体装置及びその負荷抵抗の温度補償回路
JP5175769B2 (ja) * 2009-02-25 2013-04-03 株式会社東芝 半導体記憶装置
JP4856202B2 (ja) 2009-03-12 2012-01-18 株式会社東芝 半導体記憶装置
JP2010225750A (ja) * 2009-03-23 2010-10-07 Toshiba Corp 不揮発性半導体記憶装置
US8441837B2 (en) 2009-04-15 2013-05-14 Panasonic Corporation Variable resistance nonvolatile memory device
WO2010131477A1 (ja) 2009-05-14 2010-11-18 パナソニック株式会社 不揮発性記憶装置及び不揮発性記憶装置へのデータ書込み方法
JP4705998B2 (ja) * 2009-06-08 2011-06-22 パナソニック株式会社 抵抗変化型不揮発性記憶素子の書き込み方法および抵抗変化型不揮発性記憶装置
JP5197512B2 (ja) * 2009-07-02 2013-05-15 株式会社東芝 半導体記憶装置
US8158964B2 (en) * 2009-07-13 2012-04-17 Seagate Technology Llc Schottky diode switch and memory units containing the same
US8675387B2 (en) 2009-07-28 2014-03-18 Panasonic Corporation Variable resistance nonvolatile memory device and programming method for same
JP5214566B2 (ja) * 2009-09-02 2013-06-19 株式会社東芝 抵抗変化メモリ装置
JP2011108327A (ja) * 2009-11-18 2011-06-02 Toshiba Corp 不揮発性半導体記憶装置
JP5388814B2 (ja) * 2009-11-24 2014-01-15 株式会社東芝 半導体記憶装置
US8432721B2 (en) 2010-02-02 2013-04-30 Panasonic Corporation Method of programming variable resistance element, method of initializing variable resistance element, and nonvolatile storage device
US8284597B2 (en) * 2010-05-06 2012-10-09 Macronix International Co., Ltd. Diode memory
WO2011152061A1 (ja) 2010-06-03 2011-12-08 パナソニック株式会社 クロスポイント型抵抗変化不揮発性記憶装置
JP4880101B1 (ja) * 2010-06-29 2012-02-22 パナソニック株式会社 不揮発性記憶装置及びその駆動方法
CN102569334A (zh) * 2010-12-22 2012-07-11 中国科学院微电子研究所 阻变随机存储装置及系统
US8456947B2 (en) 2011-03-08 2013-06-04 Micron Technology, Inc. Integrated circuitry, switches, and methods of selecting memory cells of a memory device
US8330139B2 (en) 2011-03-25 2012-12-11 Micron Technology, Inc. Multi-level memory cell
JP5222380B2 (ja) * 2011-05-24 2013-06-26 シャープ株式会社 可変抵抗素子のフォーミング処理方法および不揮発性半導体記憶装置
US8592795B2 (en) 2011-07-01 2013-11-26 Micron Technology, Inc. Multilevel mixed valence oxide (MVO) memory
US8394682B2 (en) 2011-07-26 2013-03-12 Micron Technology, Inc. Methods of forming graphene-containing switches
WO2013031126A1 (ja) * 2011-08-31 2013-03-07 パナソニック株式会社 読み出し回路およびこれを用いた不揮発性メモリ
US8958233B2 (en) * 2011-10-18 2015-02-17 Micron Technology, Inc. Stabilization of resistive memory
US8526214B2 (en) * 2011-11-15 2013-09-03 Stmicroelectronics Pte Ltd. Resistor thin film MTP memory
KR20130092930A (ko) * 2012-02-13 2013-08-21 에스케이하이닉스 주식회사 가변 저항 메모리 소자, 이의 제조 방법 및 이의 구동 방법
US9368581B2 (en) 2012-02-20 2016-06-14 Micron Technology, Inc. Integrated circuitry components, switches, and memory cells
US9053784B2 (en) 2012-04-12 2015-06-09 Micron Technology, Inc. Apparatuses and methods for providing set and reset voltages at the same time
US9118007B2 (en) 2013-03-14 2015-08-25 Crossbar, Inc. RRAM with dual mode operation
US9711721B2 (en) * 2014-03-07 2017-07-18 Kabushiki Kaisha Toshiba Nonvolatile memory device and method of manufacturing the same
JP5745136B1 (ja) * 2014-05-09 2015-07-08 力晶科技股▲ふん▼有限公司 不揮発性半導体記憶装置とその書き込み方法
KR102223488B1 (ko) * 2015-07-29 2021-03-08 난테로 인크. 저항성 변화 엘리먼트 어레이들에 대한 ddr 호환 메모리 회로 아키텍처
US9887351B1 (en) * 2016-09-30 2018-02-06 International Business Machines Corporation Multivalent oxide cap for analog switching resistive memory
US10205088B2 (en) * 2016-10-27 2019-02-12 Tdk Corporation Magnetic memory
JP2019021784A (ja) 2017-07-18 2019-02-07 東芝メモリ株式会社 半導体記憶装置およびその製造方法
US11126248B2 (en) * 2019-06-25 2021-09-21 Western Digital Technologies, Inc. Data storage device detecting supply current limit
JP2023043732A (ja) * 2021-09-16 2023-03-29 キオクシア株式会社 磁気記憶装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4249992B2 (ja) * 2002-12-04 2009-04-08 シャープ株式会社 半導体記憶装置及びメモリセルの書き込み並びに消去方法
JP4167513B2 (ja) * 2003-03-06 2008-10-15 シャープ株式会社 不揮発性半導体記憶装置
JP4113493B2 (ja) * 2003-06-12 2008-07-09 シャープ株式会社 不揮発性半導体記憶装置及びその制御方法
JP2005032401A (ja) * 2003-06-17 2005-02-03 Sharp Corp 不揮発性半導体記憶装置及びその書き込み方法と消去方法
CN1717748A (zh) * 2003-06-25 2006-01-04 松下电器产业株式会社 驱动非易失性存储器的方法
JP4385778B2 (ja) * 2004-01-29 2009-12-16 ソニー株式会社 記憶装置
JP2006099866A (ja) * 2004-09-29 2006-04-13 Sony Corp 記憶装置及び半導体装置
JP2006114087A (ja) * 2004-10-13 2006-04-27 Sony Corp 記憶装置及び半導体装置
WO2006137111A1 (ja) 2005-06-20 2006-12-28 Fujitsu Limited 不揮発性半導体記憶装置及びその書き込み方法
JP4398945B2 (ja) * 2006-02-23 2010-01-13 シャープ株式会社 不揮発性半導体記憶装置及びデータ書き換え方法
KR20080009315A (ko) * 2007-12-05 2008-01-28 후지쯔 가부시끼가이샤 불휘발성 반도체 기억 장치 및 그 기입 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI420523B (zh) * 2008-10-10 2013-12-21 Toshiba Kk 半導體記憶裝置
TWI581266B (zh) * 2015-01-21 2017-05-01 力旺電子股份有限公司 電阻式記憶體的記憶胞陣列

Also Published As

Publication number Publication date
KR100952088B1 (ko) 2010-04-13
US7433222B2 (en) 2008-10-07
KR20080083210A (ko) 2008-09-16
JP4203506B2 (ja) 2009-01-07
JP2007188603A (ja) 2007-07-26
TWI321792B (zh) 2010-03-11
US20070165442A1 (en) 2007-07-19
CN101371313B (zh) 2011-08-17
WO2007080840A1 (ja) 2007-07-19
CN101371313A (zh) 2009-02-18

Similar Documents

Publication Publication Date Title
TW200739580A (en) Nonvolatile semiconductor memory device
EP1566810A3 (en) Resistive memory device with stable writing
WO2008126166A1 (ja) 不揮発性半導体記憶装置及びその読み出し方法
TW200638419A (en) Electric element, memory device, and semiconductor integrated circuit
WO2009031231A1 (ja) 半導体装置
WO2009069690A1 (ja) メモリセル
TW200617968A (en) Accessing phase change memories
WO2012058324A3 (en) Resistance change memory cell circuits and methods
WO2009050833A1 (ja) 不揮発性記憶素子、並びにその不揮発性記憶素子を用いた不揮発性半導体装置
TW200636726A (en) Non-volatile semiconductor memory device
CN105304125B (zh) 用于检测写入完成的装置、系统和方法
TW200729216A (en) Resistive memory devices including selected reference memory cells
WO2008021912A3 (en) Nonvolatile resistive memories, latch circuits, and operation circuits having scalable two-terminal nanotube switches
TW200723275A (en) Nonvolatile memory device
WO2008149484A1 (ja) 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置
TW200605077A (en) Memory device
EP1895540A4 (en) NON-VOLATILE SEMICONDUCTOR MEMORY BLOCK AND WRITING PROCESS THEREFOR
WO2009060783A1 (ja) Ｍｒａｍの読み出し方法
WO2008129774A1 (ja) 抵抗変化型記憶装置
JP2007504752A5 (zh)
TW200620276A (en) Nonvolatile semiconductor memory device and read method
WO2012171989A3 (en) Non-volatile memory element
TW200943305A (en) Unit cell of nonvolatile memory device and nonvolatile memory device having the same
WO2008126366A1 (ja) 抵抗変化型素子、不揮発性スイッチング素子、および抵抗変化型記憶装置
WO2010136007A3 (de) Speicherelement, stapelung, speichermatrix und verfahren zum betreiben

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees