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WO2009069690A1 - メモリセル - Google Patents

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Publication number
WO2009069690A1
WO2009069690A1 PCT/JP2008/071531 JP2008071531W WO2009069690A1 WO 2009069690 A1 WO2009069690 A1 WO 2009069690A1 JP 2008071531 W JP2008071531 W JP 2008071531W WO 2009069690 A1 WO2009069690 A1 WO 2009069690A1
Authority
WO
WIPO (PCT)
Prior art keywords
resistance
memory cell
nonlinear
state
storage element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/071531
Other languages
English (en)
French (fr)
Inventor
Shuichiro Yasuda
Katsuhisa Aratani
Akira Kouchiyama
Tetsuya Mizuguchi
Satoshi Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to CN200880117253XA priority Critical patent/CN101868855B/zh
Priority to US12/742,538 priority patent/US8295074B2/en
Publication of WO2009069690A1 publication Critical patent/WO2009069690A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Networks Using Active Elements (AREA)

Abstract

　抵抗値を適切に制御することにより、高抵抗状態または低抵抗状態に変化させるのに必要な電圧を可変抵抗素子に印加することの可能なメモリセルを提供する。記憶素子１０と、非線形抵抗素子２０と、ＭＯＳトランジスタ３０とが電気的に直列接続されている。記憶素子１０は、ＭＯＳトランジスタ３０の非線形電流電圧特性とは逆の非線形電流電圧特性を有し、印加された電圧の極性に応じて高抵抗状態または低抵抗状態に変化する。非線形抵抗素子２０は、記憶素子１０の非線形電流電圧特性と共通の非線形電流電圧特性を有する。 
PCT/JP2008/071531 2007-11-29 2008-11-27 メモリセル Ceased WO2009069690A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200880117253XA CN101868855B (zh) 2007-11-29 2008-11-27 存储器单元
US12/742,538 US8295074B2 (en) 2007-11-29 2008-11-27 Memory cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007308916A JP5050813B2 (ja) 2007-11-29 2007-11-29 メモリセル
JP2007-308916 2007-11-29

Publications (1)

Publication Number Publication Date
WO2009069690A1 true WO2009069690A1 (ja) 2009-06-04

Family

ID=40678582

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071531 Ceased WO2009069690A1 (ja) 2007-11-29 2008-11-27 メモリセル

Country Status (6)

Country Link
US (1) US8295074B2 (ja)
JP (1) JP5050813B2 (ja)
KR (1) KR20100089857A (ja)
CN (1) CN101868855B (ja)
TW (1) TW200947674A (ja)
WO (1) WO2009069690A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011172084A (ja) * 2010-02-19 2011-09-01 Toshiba Corp 半導体集積回路
WO2019181273A1 (ja) * 2018-03-19 2019-09-26 ソニーセミコンダクタソリューションズ株式会社 クロスポイント素子および記憶装置
US10971685B2 (en) 2015-02-10 2021-04-06 Sony Corporation Selective device, memory cell, and storage unit

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JP5397668B2 (ja) * 2008-09-02 2014-01-22 ソニー株式会社 記憶素子および記憶装置
JP2010287683A (ja) * 2009-06-10 2010-12-24 Toshiba Corp 不揮発性記憶装置及びその製造方法
JP5659480B2 (ja) * 2009-10-26 2015-01-28 ソニー株式会社 記憶装置の製造方法
JP2011124511A (ja) * 2009-12-14 2011-06-23 Sony Corp 記憶素子および記憶装置
JP5630021B2 (ja) * 2010-01-19 2014-11-26 ソニー株式会社 記憶素子および記憶装置
US8134139B2 (en) * 2010-01-25 2012-03-13 Macronix International Co., Ltd. Programmable metallization cell with ion buffer layer
JP5462027B2 (ja) * 2010-02-22 2014-04-02 株式会社東芝 不揮発性半導体記憶装置
JP5708929B2 (ja) * 2010-12-13 2015-04-30 ソニー株式会社 記憶素子およびその製造方法、並びに記憶装置
JP5724651B2 (ja) * 2011-06-10 2015-05-27 ソニー株式会社 記憶素子および記憶装置
JP5708930B2 (ja) * 2011-06-30 2015-04-30 ソニー株式会社 記憶素子およびその製造方法ならびに記憶装置
JP2013016530A (ja) * 2011-06-30 2013-01-24 Sony Corp 記憶素子およびその製造方法ならびに記憶装置
US8526214B2 (en) * 2011-11-15 2013-09-03 Stmicroelectronics Pte Ltd. Resistor thin film MTP memory
US9276204B2 (en) * 2012-02-29 2016-03-01 Hewlett Packard Enterprise Development Lp Memristor with channel region in thermal equilibrium with containing region
US9099633B2 (en) 2012-03-26 2015-08-04 Adesto Technologies Corporation Solid electrolyte memory elements with electrode interface for improved performance
JP5548319B2 (ja) * 2012-04-20 2014-07-16 パナソニック株式会社 不揮発性記憶素子の駆動方法
CN102751437B (zh) * 2012-07-03 2014-11-05 北京有色金属研究总院 一种免电激活的阻变存储器及其制备方法
US8916846B2 (en) 2012-09-05 2014-12-23 Kabushiki Kaisha Toshiba Nonvolatile memory device
US9412945B1 (en) 2013-03-14 2016-08-09 Adesto Technologies Corporation Storage elements, structures and methods having edgeless features for programmable layer(s)
US10490740B2 (en) * 2013-08-09 2019-11-26 Sony Semiconductor Solutions Corporation Non-volatile memory system with reliability enhancement mechanism and method of manufacture thereof
US9147839B2 (en) 2013-09-05 2015-09-29 Micron Technology, Inc. Memory cells with recessed electrode contacts
EP3127125B1 (en) 2014-04-02 2022-03-30 Granville, Simon Edward Magnetic materials and devices comprising rare earth nitrides
JP6618481B2 (ja) 2014-04-02 2019-12-11 フランク ナタリ ドープト希土類窒化物材料および同材料を含むデバイス
US9735766B2 (en) 2015-07-31 2017-08-15 Arm Ltd. Correlated electron switch
CN110111827B (zh) * 2019-03-28 2021-04-30 上海集成电路研发中心有限公司 一种基于多个单值阻变存储器的多值阻变结构
JP2021005611A (ja) * 2019-06-26 2021-01-14 ソニーセミコンダクタソリューションズ株式会社 選択素子、メモリセル、および、記憶装置
JP7429431B2 (ja) 2020-02-27 2024-02-08 国立研究開発法人産業技術総合研究所 情報処理装置および情報処理装置の駆動方法
TWI807838B (zh) * 2021-09-16 2023-07-01 日商鎧俠股份有限公司 記憶體元件
US12469535B2 (en) * 2021-10-25 2025-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Multilevel non-volatile memory device and method

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JP2011172084A (ja) * 2010-02-19 2011-09-01 Toshiba Corp 半導体集積回路
US8331130B2 (en) 2010-02-19 2012-12-11 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
US10971685B2 (en) 2015-02-10 2021-04-06 Sony Corporation Selective device, memory cell, and storage unit
WO2019181273A1 (ja) * 2018-03-19 2019-09-26 ソニーセミコンダクタソリューションズ株式会社 クロスポイント素子および記憶装置

Also Published As

Publication number Publication date
CN101868855A (zh) 2010-10-20
US20100259967A1 (en) 2010-10-14
TW200947674A (en) 2009-11-16
JP2009135206A (ja) 2009-06-18
US8295074B2 (en) 2012-10-23
JP5050813B2 (ja) 2012-10-17
CN101868855B (zh) 2012-11-21
KR20100089857A (ko) 2010-08-12

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