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WO2008126166A1 - 不揮発性半導体記憶装置及びその読み出し方法 - Google Patents

不揮発性半導体記憶装置及びその読み出し方法 Download PDF

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Publication number
WO2008126166A1
WO2008126166A1 PCT/JP2007/054672 JP2007054672W WO2008126166A1 WO 2008126166 A1 WO2008126166 A1 WO 2008126166A1 JP 2007054672 W JP2007054672 W JP 2007054672W WO 2008126166 A1 WO2008126166 A1 WO 2008126166A1
Authority
WO
WIPO (PCT)
Prior art keywords
resistance state
storage device
nonvolatile semiconductor
semiconductor storage
reading method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/054672
Other languages
English (en)
French (fr)
Inventor
Kentaro Kinoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2009508718A priority Critical patent/JP5056847B2/ja
Priority to PCT/JP2007/054672 priority patent/WO2008126166A1/ja
Publication of WO2008126166A1 publication Critical patent/WO2008126166A1/ja
Priority to US12/553,172 priority patent/US8248837B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/74—Array wherein each memory cell has more than one access device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/76—Array using an access device for each cell which being not a transistor and not a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)

Abstract

　高抵抗状態と低抵抗状態とを記憶し、電圧の印加によって高抵抗状態と低抵抗状態とを切り換える抵抗記憶素子１０であって、一方の端部がビット線ＢＬに接続され、他方の端部が第１のトランジスタ１２を介してソース線ＳＬに接続された抵抗記憶素子を有するメモリセル１４と、低抵抗状態の抵抗記憶素子の抵抗値より高く、高抵抗状態の抵抗記憶素子の抵抗値より低い抵抗値を有し、抵抗記憶素子の一方の端部及びビット線に一方の端部が接続され、他方の端部が第２のトランジスタ１８を介してソース線に接続された抵抗体とを有している。
PCT/JP2007/054672 2007-03-09 2007-03-09 不揮発性半導体記憶装置及びその読み出し方法 Ceased WO2008126166A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009508718A JP5056847B2 (ja) 2007-03-09 2007-03-09 不揮発性半導体記憶装置及びその読み出し方法
PCT/JP2007/054672 WO2008126166A1 (ja) 2007-03-09 2007-03-09 不揮発性半導体記憶装置及びその読み出し方法
US12/553,172 US8248837B2 (en) 2007-03-09 2009-09-03 Nonvolatile semiconductor memory device and reading method of nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/054672 WO2008126166A1 (ja) 2007-03-09 2007-03-09 不揮発性半導体記憶装置及びその読み出し方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/553,172 Continuation US8248837B2 (en) 2007-03-09 2009-09-03 Nonvolatile semiconductor memory device and reading method of nonvolatile semiconductor memory device

Publications (1)

Publication Number Publication Date
WO2008126166A1 true WO2008126166A1 (ja) 2008-10-23

Family

ID=39863350

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/054672 Ceased WO2008126166A1 (ja) 2007-03-09 2007-03-09 不揮発性半導体記憶装置及びその読み出し方法

Country Status (3)

Country Link
US (1) US8248837B2 (ja)
JP (1) JP5056847B2 (ja)
WO (1) WO2008126166A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010050094A1 (ja) * 2008-10-30 2010-05-06 パナソニック株式会社 不揮発性半導体記憶装置及びその製造方法
WO2010125780A1 (ja) * 2009-04-30 2010-11-04 パナソニック株式会社 不揮発性記憶素子及び不揮発性記憶装置
JP2012523063A (ja) * 2009-04-03 2012-09-27 サンディスク スリーディー，エルエルシー 他の素子からの電流を使用する不揮発性記憶素子のプログラミング

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7881098B2 (en) 2008-08-26 2011-02-01 Seagate Technology Llc Memory with separate read and write paths
US8004872B2 (en) 2008-11-17 2011-08-23 Seagate Technology Llc Floating source line architecture for non-volatile memory
US7826259B2 (en) 2009-01-29 2010-11-02 Seagate Technology Llc Staggered STRAM cell
JP2012060024A (ja) * 2010-09-10 2012-03-22 Sony Corp 記憶素子および記憶装置
US9685608B2 (en) * 2012-04-13 2017-06-20 Crossbar, Inc. Reduced diffusion in metal electrode for two-terminal memory
US9245926B2 (en) 2012-05-07 2016-01-26 Micron Technology, Inc. Apparatuses and methods including memory access in cross point memory
US8675423B2 (en) * 2012-05-07 2014-03-18 Micron Technology, Inc. Apparatuses and methods including supply current in memory
KR101952272B1 (ko) * 2012-11-06 2019-02-26 삼성전자주식회사 반도체 기억 소자
US20140175371A1 (en) * 2012-12-21 2014-06-26 Elijah V. Karpov Vertical cross-point embedded memory architecture for metal-conductive oxide-metal (mcom) memory elements
CN104956481B (zh) * 2013-02-19 2018-01-09 松下知识产权经营株式会社 非易失性半导体存储装置
US9548449B2 (en) * 2013-06-25 2017-01-17 Intel Corporation Conductive oxide random access memory (CORAM) cell and method of fabricating same
KR102127137B1 (ko) * 2013-12-03 2020-06-26 삼성전자주식회사 셀 트랜지스터들의 계면 상태를 제어하여 센싱 마진을 보상할 수 있는 저항성 메모리 장치
WO2016092374A1 (en) 2014-12-10 2016-06-16 King Abdullah University Of Science And Technology All-printed paper-based memory
WO2016124969A2 (en) * 2014-12-31 2016-08-11 King Abdullah University Of Science And Technology All-printed paper memory
US11139025B2 (en) 2020-01-22 2021-10-05 International Business Machines Corporation Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array
JP2021150364A (ja) * 2020-03-17 2021-09-27 ソニーセミコンダクタソリューションズ株式会社 半導体装置及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006137110A1 (ja) * 2005-06-20 2006-12-28 Fujitsu Limited 不揮発性半導体記憶装置及びその書き込み方法
WO2007023569A1 (ja) * 2005-08-26 2007-03-01 Fujitsu Limited 不揮発性半導体記憶装置及びその書き込み方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6097625A (en) * 1998-07-16 2000-08-01 International Business Machines Corporation Magnetic random access memory (MRAM) array with magnetic tunnel junction (MTJ) cells and remote diodes
US6687165B1 (en) * 2002-12-26 2004-02-03 Micron Technology, Inc. Temperature-compensated output buffer circuit
WO2005066969A1 (en) * 2003-12-26 2005-07-21 Matsushita Electric Industrial Co., Ltd. Memory device, memory circuit and semiconductor integrated circuit having variable resistance
JP4569231B2 (ja) * 2004-09-07 2010-10-27 Ｔｄｋ株式会社 磁気メモリ及びその製造方法
JP3919205B2 (ja) * 2004-09-09 2007-05-23 松下電器産業株式会社 抵抗変化素子とその製造方法
KR100735750B1 (ko) * 2005-12-15 2007-07-06 삼성전자주식회사 복수개의 균일한 기준 데이터들을 생성하는 기준 셀 블록및 감지증폭 유니트들을 구비하는 반도체 소자들 및 이를채택하는 시스템들

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006137110A1 (ja) * 2005-06-20 2006-12-28 Fujitsu Limited 不揮発性半導体記憶装置及びその書き込み方法
WO2007023569A1 (ja) * 2005-08-26 2007-03-01 Fujitsu Limited 不揮発性半導体記憶装置及びその書き込み方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010050094A1 (ja) * 2008-10-30 2010-05-06 パナソニック株式会社 不揮発性半導体記憶装置及びその製造方法
CN102124564A (zh) * 2008-10-30 2011-07-13 松下电器产业株式会社 非易失性半导体存储装置及其制造方法
JPWO2010050094A1 (ja) * 2008-10-30 2012-03-29 パナソニック株式会社 不揮発性半導体記憶装置及びその製造方法
US8445883B2 (en) 2008-10-30 2013-05-21 Panasonic Corporation Nonvolatile semiconductor memory device and manufacturing method thereof
JP2012523063A (ja) * 2009-04-03 2012-09-27 サンディスク スリーディー，エルエルシー 他の素子からの電流を使用する不揮発性記憶素子のプログラミング
WO2010125780A1 (ja) * 2009-04-30 2010-11-04 パナソニック株式会社 不揮発性記憶素子及び不揮発性記憶装置
JP4628500B2 (ja) * 2009-04-30 2011-02-09 パナソニック株式会社 不揮発性記憶素子及び不揮発性記憶装置
CN102047423A (zh) * 2009-04-30 2011-05-04 松下电器产业株式会社 非易失性存储元件及非易失性存储装置
US8508976B2 (en) 2009-04-30 2013-08-13 Panasonic Corporation Nonvolatile memory element and nonvolatile memory device
CN102047423B (zh) * 2009-04-30 2013-11-20 松下电器产业株式会社 非易失性存储元件及非易失性存储装置

Also Published As

Publication number Publication date
JP5056847B2 (ja) 2012-10-24
US20090323397A1 (en) 2009-12-31
US8248837B2 (en) 2012-08-21
JPWO2008126166A1 (ja) 2010-07-15

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