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GB1059960A - The production of semi-conductor rods - Google Patents

The production of semi-conductor rods

Info

Publication number
GB1059960A
GB1059960A GB49022/63A GB4902263A GB1059960A GB 1059960 A GB1059960 A GB 1059960A GB 49022/63 A GB49022/63 A GB 49022/63A GB 4902263 A GB4902263 A GB 4902263A GB 1059960 A GB1059960 A GB 1059960A
Authority
GB
United Kingdom
Prior art keywords
semi
production
conductor rods
melt
pulled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB49022/63A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Publication of GB1059960A publication Critical patent/GB1059960A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

A monocrystalline silicon rod 6 (Figs. not shown) having a diameter greater than 35 mm. is pulled through an induction coil 5 from a melt 3 contained in a silicon block 2, the melt being replenished by simultaneously lowering a silicon rod 7 through an induction coil 4. The rod may be pulled at 2-4 mm/min. and may be rotated during pulling at 10-150 rpm. The block may be formed from matching prisms held together in a crucible of graphite or quartz and may be heated externally to 1,200 DEG C.
GB49022/63A 1962-12-12 1963-12-11 The production of semi-conductor rods Expired GB1059960A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES82821A DE1243641B (en) 1962-12-12 1962-12-12 Process for the production of semiconductor rods by drawing from the melt

Publications (1)

Publication Number Publication Date
GB1059960A true GB1059960A (en) 1967-02-22

Family

ID=7510627

Family Applications (1)

Application Number Title Priority Date Filing Date
GB49022/63A Expired GB1059960A (en) 1962-12-12 1963-12-11 The production of semi-conductor rods

Country Status (5)

Country Link
US (1) US3261722A (en)
BE (1) BE641091A (en)
CH (1) CH420071A (en)
DE (1) DE1243641B (en)
GB (1) GB1059960A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3470039A (en) * 1966-12-21 1969-09-30 Texas Instruments Inc Continuous junction growth
DE1519908A1 (en) * 1966-12-30 1970-07-02 Siemens Ag Device for producing a crystalline rod by zone melting without a crucible
US3607114A (en) * 1969-10-13 1971-09-21 Siemens Ag Apparatus for producing a monocrystalline rod, particularly of semiconductor material
US3776703A (en) * 1970-11-30 1973-12-04 Texas Instruments Inc Method of growing 1-0-0 orientation high perfection single crystal silicon by adjusting a focus coil
US4650540A (en) * 1975-07-09 1987-03-17 Milton Stoll Methods and apparatus for producing coherent or monolithic elements
US4575401A (en) * 1984-06-07 1986-03-11 Wedtech Corp Method of and apparatus for the drawing of bars of monocrystalline silicon
US4548670A (en) * 1984-07-20 1985-10-22 Wedtech Corp. Silicon melting and evaporation method for high purity applications
US5958133A (en) * 1996-01-29 1999-09-28 General Signal Corporation Material handling system for growing high-purity crystals

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL96829C (en) * 1952-08-01
DE973231C (en) * 1953-01-20 1959-12-24 Telefunken Gmbh Process for the production of single crystals by pulling from a melt
US2793103A (en) * 1954-02-24 1957-05-21 Siemens Ag Method for producing rod-shaped bodies of crystalline material
DE1017795B (en) * 1954-05-25 1957-10-17 Siemens Ag Process for the production of the purest crystalline substances, preferably semiconductor substances
BE542056A (en) * 1954-10-15
US2979386A (en) * 1956-08-02 1961-04-11 Shockley William Crystal growing apparatus
US2890139A (en) * 1956-12-10 1959-06-09 Shockley William Semi-conductive material purification method and apparatus
NL237834A (en) * 1958-04-09
US3084037A (en) * 1960-01-08 1963-04-02 Temescal Metallurgical Corp Gaseous ion purification process
US3160497A (en) * 1962-11-15 1964-12-08 Loung Pai Yen Method of melting refractory metals using a double heating process

Also Published As

Publication number Publication date
DE1243641B (en) 1967-07-06
BE641091A (en) 1964-06-11
US3261722A (en) 1966-07-19
CH420071A (en) 1966-09-15

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