GB1047070A - A process for zone-by-zone melting a rod of material - Google Patents
A process for zone-by-zone melting a rod of materialInfo
- Publication number
- GB1047070A GB1047070A GB36406/64A GB3640664A GB1047070A GB 1047070 A GB1047070 A GB 1047070A GB 36406/64 A GB36406/64 A GB 36406/64A GB 3640664 A GB3640664 A GB 3640664A GB 1047070 A GB1047070 A GB 1047070A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- zone
- frequency
- tank circuit
- generator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Induction Heating (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
In a method of zone-melting a rod of silicon using a work tank circuit comprising a pancake induction coil and a capacitor in parallel therewith and maintaining the diameter of the rod constant by utilizing change in the anode current of the A.C. generator (caused by change in the diameter of the molten zone) to effect compression or stretching of the two ends of the rod, the generator frequency is maintained at a value above the resonance frequency in the work tank circuit while the molten zone exists. After passage of the molten zone, an incandescent zone may be passed in the opposite direction, the frequency being maintained at a value below the resonance frequency in the work tank circuit. The lower end of the rod may be rotated while the upper end is raised or lowered. The generator frequency may be 3-5 megacycles/sec. The rod has a diameter greater than 20 mm.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES87138A DE1198324B (en) | 1963-09-06 | 1963-09-06 | Process for crucible-free zone melting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1047070A true GB1047070A (en) | 1966-11-02 |
Family
ID=7513523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB36406/64A Expired GB1047070A (en) | 1963-09-06 | 1964-09-04 | A process for zone-by-zone melting a rod of material |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3271551A (en) |
| CH (1) | CH408873A (en) |
| DE (1) | DE1198324B (en) |
| GB (1) | GB1047070A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3515836A (en) * | 1968-06-24 | 1970-06-02 | Business Assets Corp | Elevator means for a heat scanner device |
| DE2434136A1 (en) * | 1974-07-16 | 1976-01-29 | Siemens Ag | DEVICE FOR CRUCIBLE-FREE ZONE MELTING OF SEMICONDUCTOR MATERIAL RODS |
| DE2628048C2 (en) * | 1976-06-23 | 1987-02-26 | Siemens AG, 1000 Berlin und 8000 München | Process for crucible-free zone melting of a semiconductor crystal rod |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE962006C (en) * | 1954-07-01 | 1957-04-18 | Siemens Ag | Method for inductive melting, in particular zone drawing, of semiconductors by means of a high-frequency coil |
| DE1153908B (en) * | 1958-04-22 | 1963-09-05 | Siemens Ag | Method and device for crucible-free zone melting with changing the spacing of the rod ends |
-
1963
- 1963-09-06 DE DES87138A patent/DE1198324B/en active Pending
-
1964
- 1964-04-17 CH CH500964A patent/CH408873A/en unknown
- 1964-09-04 GB GB36406/64A patent/GB1047070A/en not_active Expired
- 1964-09-08 US US394834A patent/US3271551A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE1198324B (en) | 1965-08-12 |
| US3271551A (en) | 1966-09-06 |
| CH408873A (en) | 1966-03-15 |
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