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GB930432A - Improvements in or relating to methods of making bodies of semi-conductor material - Google Patents

Improvements in or relating to methods of making bodies of semi-conductor material

Info

Publication number
GB930432A
GB930432A GB33494/61A GB3349461A GB930432A GB 930432 A GB930432 A GB 930432A GB 33494/61 A GB33494/61 A GB 33494/61A GB 3349461 A GB3349461 A GB 3349461A GB 930432 A GB930432 A GB 930432A
Authority
GB
United Kingdom
Prior art keywords
rod
coil
cooled
effected
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB33494/61A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB930432A publication Critical patent/GB930432A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

A dendritic crystal 3 of silicon is pulled from <PICT:0930432/III/1> a super-cooled portion of a molten drop 2 at the upper end of a rod 1, melting being effected by an induction heating coil which is moved relatively to the rod as pulling proceeds. The dendritic crystal may alternatively be pulled from a drop at the lower end of a rod. The seed crystal may be first lowered into the molten drop and then a water-cooled coil 5 moved into position to effect supercooling. Cooling may alternatively or in addition be effected by cooling gas. The molten drop may be supported by an additional induction coil 6. The solid portion of the rod 1 may be cooled by a water-cooled coil 7. Coils 6 and 7 may be replaced by single coil (Fig. 2, not shown). The container 11 may be of quartz and may be sprayed with water. Pulling may be effected in an atmosphere of hydrogen. The rod may be doped before treatment or a doping agent may be added to the molten zone.
GB33494/61A 1960-09-20 1961-09-19 Improvements in or relating to methods of making bodies of semi-conductor material Expired GB930432A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES70427A DE1162329B (en) 1960-09-20 1960-09-20 Method for producing elongated, in particular dendritic semiconductor bodies and device for carrying out this method
DES73416A DE1202248B (en) 1960-09-20 1961-04-11 Process for the production of ribbon-shaped semiconductor crystals

Publications (1)

Publication Number Publication Date
GB930432A true GB930432A (en) 1963-07-03

Family

ID=25996215

Family Applications (2)

Application Number Title Priority Date Filing Date
GB33494/61A Expired GB930432A (en) 1960-09-20 1961-09-19 Improvements in or relating to methods of making bodies of semi-conductor material
GB13919/62A Expired GB944192A (en) 1960-09-20 1962-04-11 Improvements in or relating to methods of making bodies of semi-conductor material

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB13919/62A Expired GB944192A (en) 1960-09-20 1962-04-11 Improvements in or relating to methods of making bodies of semi-conductor material

Country Status (5)

Country Link
US (1) US3293001A (en)
CH (2) CH386395A (en)
DE (2) DE1162329B (en)
GB (2) GB930432A (en)
NL (1) NL269311A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3275417A (en) * 1963-10-15 1966-09-27 Texas Instruments Inc Production of dislocation-free silicon single crystals
US3397042A (en) * 1963-10-15 1968-08-13 Texas Instruments Inc Production of dislocation-free silicon single crystals

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1242578B (en) * 1960-09-29 1967-06-22 Siemens Ag Device for the production of ribbon-shaped, dendritically grown, high-purity semiconductor crystals
US4040890A (en) * 1975-06-27 1977-08-09 Bell Telephone Laboratories, Incorporated Neodymium oxide doped yttrium aluminum garnet optical fiber
US5108720A (en) * 1991-05-20 1992-04-28 Hemlock Semiconductor Corporation Float zone processing of particulate silicon
CN105002556A (en) * 2014-04-21 2015-10-28 洛阳金诺机械工程有限公司 Device for raising crystallization velocity of silicon core during drawing of silicone core

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE500569A (en) * 1950-01-13
AT194444B (en) * 1953-02-26 1958-01-10 Siemens Ag Method and device for treating an elongated semiconductor crystal arrangement
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus
US2897329A (en) * 1957-09-23 1959-07-28 Sylvania Electric Prod Zone melting apparatus
FR1235341A (en) * 1958-03-05 1960-07-08 Siemens Ag Method and apparatus for continuously manufacturing thin mono-crystalline rods
US3096158A (en) * 1959-09-25 1963-07-02 Gerthart K Gaule Apparatus for pulling single crystals in the form of long flat strips from a melt

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3275417A (en) * 1963-10-15 1966-09-27 Texas Instruments Inc Production of dislocation-free silicon single crystals
US3397042A (en) * 1963-10-15 1968-08-13 Texas Instruments Inc Production of dislocation-free silicon single crystals

Also Published As

Publication number Publication date
CH386395A (en) 1965-01-15
GB944192A (en) 1963-12-11
DE1162329B (en) 1964-02-06
NL269311A (en)
US3293001A (en) 1966-12-20
CH401919A (en) 1965-11-15
DE1202248B (en) 1965-10-07

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