EP1628329A4 - Dispositif d'exposition et procede de fabrication dudit dispositif - Google Patents
Dispositif d'exposition et procede de fabrication dudit dispositifInfo
- Publication number
- EP1628329A4 EP1628329A4 EP04734624A EP04734624A EP1628329A4 EP 1628329 A4 EP1628329 A4 EP 1628329A4 EP 04734624 A EP04734624 A EP 04734624A EP 04734624 A EP04734624 A EP 04734624A EP 1628329 A4 EP1628329 A4 EP 1628329A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- manufacturing
- same
- exposure device
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7007—Alignment other than original with workpiece
- G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7096—Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus
-
- H10P76/2041—
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Plasma & Fusion (AREA)
- Multimedia (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Microscoopes, Condenser (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP12155100A EP2466620A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP12155093.3A EP2498131B1 (fr) | 2003-05-23 | 2004-05-24 | Appareil et méthode d'exposition par immersion dans un liquide, et procédé de production d'un dispositif |
| EP15199243.5A EP3032572A1 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP12155114A EP2535769A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP12155099A EP2466619A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP12155095A EP2466615A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP12155097A EP2466617A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP12155096A EP2466616A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP12155098A EP2466618A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003146423 | 2003-05-23 | ||
| JP2003305280 | 2003-08-28 | ||
| JP2004049231 | 2004-02-25 | ||
| PCT/JP2004/007417 WO2004105107A1 (fr) | 2003-05-23 | 2004-05-24 | Dispositif d'exposition et procede de fabrication dudit dispositif |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP12155093.3A Division EP2498131B1 (fr) | 2003-05-23 | 2004-05-24 | Appareil et méthode d'exposition par immersion dans un liquide, et procédé de production d'un dispositif |
| EP15199243.5A Division EP3032572A1 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP1628329A1 EP1628329A1 (fr) | 2006-02-22 |
| EP1628329A4 true EP1628329A4 (fr) | 2009-09-16 |
Family
ID=33479649
Family Applications (10)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP12155097A Withdrawn EP2466617A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP04734624A Withdrawn EP1628329A4 (fr) | 2003-05-23 | 2004-05-24 | Dispositif d'exposition et procede de fabrication dudit dispositif |
| EP12155099A Withdrawn EP2466619A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP12155098A Withdrawn EP2466618A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP12155093.3A Expired - Lifetime EP2498131B1 (fr) | 2003-05-23 | 2004-05-24 | Appareil et méthode d'exposition par immersion dans un liquide, et procédé de production d'un dispositif |
| EP12155114A Withdrawn EP2535769A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP15199243.5A Withdrawn EP3032572A1 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP12155100A Withdrawn EP2466620A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP12155095A Withdrawn EP2466615A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP12155096A Withdrawn EP2466616A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP12155097A Withdrawn EP2466617A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
Family Applications After (8)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP12155099A Withdrawn EP2466619A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP12155098A Withdrawn EP2466618A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP12155093.3A Expired - Lifetime EP2498131B1 (fr) | 2003-05-23 | 2004-05-24 | Appareil et méthode d'exposition par immersion dans un liquide, et procédé de production d'un dispositif |
| EP12155114A Withdrawn EP2535769A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP15199243.5A Withdrawn EP3032572A1 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP12155100A Withdrawn EP2466620A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP12155095A Withdrawn EP2466615A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
| EP12155096A Withdrawn EP2466616A3 (fr) | 2003-05-23 | 2004-05-24 | Appareil d'exposition et procédé de production d'un dispositif |
Country Status (7)
| Country | Link |
|---|---|
| US (14) | US7388649B2 (fr) |
| EP (10) | EP2466617A3 (fr) |
| JP (13) | JP5440228B2 (fr) |
| KR (10) | KR101536033B1 (fr) |
| HK (1) | HK1221072A1 (fr) |
| TW (8) | TWI612556B (fr) |
| WO (1) | WO2004105107A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8941810B2 (en) | 2005-12-30 | 2015-01-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
Families Citing this family (174)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1420300B1 (fr) * | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Appareil lithographique et méthode de fabrication d'un dispositif |
| CN101713932B (zh) | 2002-11-12 | 2012-09-26 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
| KR100585476B1 (ko) | 2002-11-12 | 2006-06-07 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 디바이스 제조방법 |
| US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101085372B1 (ko) * | 2002-12-10 | 2011-11-21 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| KR101187612B1 (ko) | 2003-04-09 | 2012-10-08 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
| WO2004093160A2 (fr) * | 2003-04-10 | 2004-10-28 | Nikon Corporation | Trajet de ruissellement permettant de recueillir un liquide dans un appareil de lithographie a immersion |
| KR101289959B1 (ko) | 2003-04-11 | 2013-07-26 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR101861493B1 (ko) | 2003-04-11 | 2018-05-28 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법 |
| TWI612556B (zh) | 2003-05-23 | 2018-01-21 | 尼康股份有限公司 | 曝光裝置、曝光方法及元件製造方法 |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7684008B2 (en) | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2004112108A1 (fr) * | 2003-06-13 | 2004-12-23 | Nikon Corporation | Procede d'exposition, etage de substrat, appareil d'exposition et procede de fabrication d'un dispositif |
| JP4437474B2 (ja) | 2003-06-19 | 2010-03-24 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
| US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
| DE60308161T2 (de) | 2003-06-27 | 2007-08-09 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
| JP3862678B2 (ja) * | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| EP1653501B1 (fr) | 2003-07-28 | 2012-09-19 | Nikon Corporation | Appareil d'exposition, procede de production de dispositif, et procede de commande d'appareil d'exposition |
| EP1662554A4 (fr) * | 2003-08-21 | 2008-01-23 | Nikon Corp | Appareil d'exposition, procede d'exposition et procede pour produire un dispositif |
| TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| JP4325622B2 (ja) * | 2003-08-29 | 2009-09-02 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| WO2005031820A1 (fr) | 2003-09-26 | 2005-04-07 | Nikon Corporation | Dispositif d'eclairage de projection, procede de nettoyage et d'entretien du dispositif d'eclairage de projection, et procede de fabrication d'un tel dispositif |
| KR101111364B1 (ko) | 2003-10-08 | 2012-02-27 | 가부시키가이샤 자오 니콘 | 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광방법, 디바이스 제조 방법 |
| TWI628698B (zh) | 2003-10-28 | 2018-07-01 | 尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造方法 |
| TWI361450B (en) * | 2003-10-31 | 2012-04-01 | Nikon Corp | Platen, stage device, exposure device and exposure method |
| EP3392713A1 (fr) | 2003-10-31 | 2018-10-24 | Nikon Corporation | Appareil et procédé d'exposition par immersion |
| JP2005159322A (ja) | 2003-10-31 | 2005-06-16 | Nikon Corp | 定盤、ステージ装置及び露光装置並びに露光方法 |
| JP4295712B2 (ja) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置製造方法 |
| TW201809801A (zh) | 2003-11-20 | 2018-03-16 | 日商尼康股份有限公司 | 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法 |
| SG148993A1 (en) | 2003-12-03 | 2009-01-29 | Nikon Corp | Exposure apparatus, exposure method, method for producing device, and optical part |
| US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
| WO2005076321A1 (fr) | 2004-02-03 | 2005-08-18 | Nikon Corporation | Appareil d’exposition et procede de fabrication d’un dispositif |
| TWI360837B (en) | 2004-02-06 | 2012-03-21 | Nikon Corp | Polarization changing device, optical illumination |
| US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2005076323A1 (fr) * | 2004-02-10 | 2005-08-18 | Nikon Corporation | Aligneur, procede de fabrication de dispositif, procede de maintenance et procede d'alignement |
| US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| CN101833247B (zh) * | 2004-06-04 | 2013-11-06 | 卡尔蔡司Smt有限责任公司 | 微光刻投影曝光系统的投影物镜的光学测量的测量系统 |
| CN101776850B (zh) * | 2004-06-09 | 2013-03-20 | 尼康股份有限公司 | 曝光装置及元件制造方法 |
| KR101378688B1 (ko) | 2004-06-21 | 2014-03-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US8698998B2 (en) | 2004-06-21 | 2014-04-15 | Nikon Corporation | Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device |
| EP3098835B1 (fr) * | 2004-06-21 | 2017-07-26 | Nikon Corporation | Dispositif d'exposition, procédé d'exposition et procédé de fabrication de dispositif |
| US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101433491B1 (ko) | 2004-07-12 | 2014-08-22 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| JP2006041046A (ja) * | 2004-07-23 | 2006-02-09 | Canon Inc | 光電計測装置及び露光装置 |
| DE602005021653D1 (de) | 2004-08-03 | 2010-07-15 | Nippon Kogaku Kk | Belichtungsgeräte, belichtungsverfahren und bauelemente-herstellungsverfahren |
| US7224427B2 (en) * | 2004-08-03 | 2007-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Megasonic immersion lithography exposure apparatus and method |
| US8305553B2 (en) | 2004-08-18 | 2012-11-06 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP2325866A1 (fr) * | 2004-09-17 | 2011-05-25 | Nikon Corporation | Appareil de maintien de substrat, appareil d'exposition et procédé de fabrication de dispositif |
| US7385670B2 (en) * | 2004-10-05 | 2008-06-10 | Asml Netherlands B.V. | Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus |
| JP4665712B2 (ja) | 2004-10-26 | 2011-04-06 | 株式会社ニコン | 基板処理方法、露光装置及びデバイス製造方法 |
| US7446850B2 (en) | 2004-12-03 | 2008-11-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101339887B1 (ko) * | 2004-12-06 | 2013-12-10 | 가부시키가이샤 니콘 | 메인터넌스 방법, 메인터넌스 기기, 노광 장치, 및디바이스 제조 방법 |
| JP4752473B2 (ja) | 2004-12-09 | 2011-08-17 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
| US7880860B2 (en) * | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7528931B2 (en) * | 2004-12-20 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7450217B2 (en) | 2005-01-12 | 2008-11-11 | Asml Netherlands B.V. | Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
| US20060232753A1 (en) | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
| US7433016B2 (en) * | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR20170089028A (ko) | 2005-05-12 | 2017-08-02 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 디바이스 제조 방법 |
| US7924416B2 (en) | 2005-06-22 | 2011-04-12 | Nikon Corporation | Measurement apparatus, exposure apparatus, and device manufacturing method |
| JPWO2006137440A1 (ja) * | 2005-06-22 | 2009-01-22 | 株式会社ニコン | 計測装置及び露光装置、並びにデバイス製造方法 |
| JP2007012375A (ja) * | 2005-06-29 | 2007-01-18 | Toyota Motor Corp | 燃料電池、燃料電池用電極触媒層の製造方法、及び燃料電池の運転方法 |
| WO2007007746A1 (fr) * | 2005-07-11 | 2007-01-18 | Nikon Corporation | Appareil d’exposition et procédé de fabrication du dispositif |
| JP5011676B2 (ja) * | 2005-08-12 | 2012-08-29 | 株式会社日立製作所 | 表示装置を備える機器 |
| WO2007029829A1 (fr) * | 2005-09-09 | 2007-03-15 | Nikon Corporation | Appareil et procédé d’exposition, et procédé de production de dispositif |
| US7929109B2 (en) | 2005-10-20 | 2011-04-19 | Nikon Corporation | Apparatus and method for recovering liquid droplets in immersion lithography |
| JP4735186B2 (ja) | 2005-10-21 | 2011-07-27 | 株式会社ニコン | 液浸顕微鏡装置 |
| US7986395B2 (en) | 2005-10-24 | 2011-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography apparatus and methods |
| US7773195B2 (en) | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
| US8125610B2 (en) | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
| JP4889331B2 (ja) * | 2006-03-22 | 2012-03-07 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
| CN101416076A (zh) * | 2006-04-03 | 2009-04-22 | 株式会社尼康 | 对浸没液体为疏溶的入射表面和光学窗 |
| JP5217239B2 (ja) | 2006-05-18 | 2013-06-19 | 株式会社ニコン | 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 |
| US7969548B2 (en) * | 2006-05-22 | 2011-06-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
| KR20090023335A (ko) * | 2006-05-22 | 2009-03-04 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 메인터넌스 방법, 그리고 디바이스 제조 방법 |
| JP5019170B2 (ja) * | 2006-05-23 | 2012-09-05 | 株式会社ニコン | メンテナンス方法、露光方法及び装置、並びにデバイス製造方法 |
| US20070273856A1 (en) * | 2006-05-25 | 2007-11-29 | Nikon Corporation | Apparatus and methods for inhibiting immersion liquid from flowing below a substrate |
| JPWO2007139017A1 (ja) * | 2006-05-29 | 2009-10-08 | 株式会社ニコン | 液体回収部材、基板保持部材、露光装置、及びデバイス製造方法 |
| US7532309B2 (en) * | 2006-06-06 | 2009-05-12 | Nikon Corporation | Immersion lithography system and method having an immersion fluid containment plate for submerging the substrate to be imaged in immersion fluid |
| US8564759B2 (en) | 2006-06-29 | 2013-10-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for immersion lithography |
| CN101390194B (zh) * | 2006-06-30 | 2011-04-20 | 株式会社尼康 | 维修方法、曝光方法及装置、以及元件制造方法 |
| ATE431575T1 (de) * | 2006-08-28 | 2009-05-15 | Imec Inter Uni Micro Electr | Verfahren und system zur kontaminationsmessung bei einem lithografischen element |
| WO2008026593A1 (fr) | 2006-08-30 | 2008-03-06 | Nikon Corporation | Dispositif d'exposition, procédé de fabrication de dispositif, procédé de nettoyage et élément de nettoyage |
| US7826030B2 (en) * | 2006-09-07 | 2010-11-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2008029884A1 (fr) * | 2006-09-08 | 2008-03-13 | Nikon Corporation | Dispositif et procédé de nettoyage, et procédé de fabrication du dispositif |
| US20080100812A1 (en) * | 2006-10-26 | 2008-05-01 | Nikon Corporation | Immersion lithography system and method having a wafer chuck made of a porous material |
| JP5055971B2 (ja) * | 2006-11-16 | 2012-10-24 | 株式会社ニコン | 表面処理方法及び表面処理装置、露光方法及び露光装置、並びにデバイス製造方法 |
| US9632425B2 (en) | 2006-12-07 | 2017-04-25 | Asml Holding N.V. | Lithographic apparatus, a dryer and a method of removing liquid from a surface |
| JP2008192854A (ja) * | 2007-02-05 | 2008-08-21 | Canon Inc | 液浸露光装置 |
| US8817226B2 (en) | 2007-02-15 | 2014-08-26 | Asml Holding N.V. | Systems and methods for insitu lens cleaning using ozone in immersion lithography |
| US8654305B2 (en) * | 2007-02-15 | 2014-02-18 | Asml Holding N.V. | Systems and methods for insitu lens cleaning in immersion lithography |
| US20080198347A1 (en) * | 2007-02-16 | 2008-08-21 | Canon Kabushiki Kaisha | Immersion exposure apparatus and method of manufacturing device |
| JP4366407B2 (ja) * | 2007-02-16 | 2009-11-18 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| JP2008218653A (ja) * | 2007-03-02 | 2008-09-18 | Canon Inc | 露光装置及びデバイス製造方法 |
| US8237911B2 (en) | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
| JP2008258324A (ja) * | 2007-04-03 | 2008-10-23 | Canon Inc | 露光装置及びデバイスの製造方法 |
| US8947629B2 (en) | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| US8011377B2 (en) | 2007-05-04 | 2011-09-06 | Asml Netherlands B.V. | Cleaning device and a lithographic apparatus cleaning method |
| US7866330B2 (en) | 2007-05-04 | 2011-01-11 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| US7841352B2 (en) * | 2007-05-04 | 2010-11-30 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| JP2008283052A (ja) * | 2007-05-11 | 2008-11-20 | Toshiba Corp | 液浸露光装置および半導体装置の製造方法 |
| WO2008146819A1 (fr) * | 2007-05-28 | 2008-12-04 | Nikon Corporation | Dispositif d'exposition, procédé de fabrication de ce dispositif, dispositif de nettoyage, procédé de nettoyage et procédé d'exposition |
| US8514365B2 (en) * | 2007-06-01 | 2013-08-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20090014030A1 (en) * | 2007-07-09 | 2009-01-15 | Asml Netherlands B.V. | Substrates and methods of using those substrates |
| US7916269B2 (en) | 2007-07-24 | 2011-03-29 | Asml Netherlands B.V. | Lithographic apparatus and contamination removal or prevention method |
| US9019466B2 (en) | 2007-07-24 | 2015-04-28 | Asml Netherlands B.V. | Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system |
| US8451427B2 (en) | 2007-09-14 | 2013-05-28 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
| NL1035942A1 (nl) * | 2007-09-27 | 2009-03-30 | Asml Netherlands Bv | Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus. |
| SG151198A1 (en) * | 2007-09-27 | 2009-04-30 | Asml Netherlands Bv | Methods relating to immersion lithography and an immersion lithographic apparatus |
| JP2009094145A (ja) * | 2007-10-04 | 2009-04-30 | Canon Inc | 露光装置、露光方法およびデバイス製造方法 |
| JP5267029B2 (ja) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | 照明光学装置、露光装置及びデバイスの製造方法 |
| SG10201602750RA (en) | 2007-10-16 | 2016-05-30 | Nikon Corp | Illumination Optical System, Exposure Apparatus, And Device Manufacturing Method |
| WO2009050976A1 (fr) | 2007-10-16 | 2009-04-23 | Nikon Corporation | Système optique d'éclairage, appareil d'exposition et procédé de fabrication de dispositif |
| US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| JP5017232B2 (ja) * | 2007-10-31 | 2012-09-05 | エーエスエムエル ネザーランズ ビー.ブイ. | クリーニング装置および液浸リソグラフィ装置 |
| US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
| NL1036273A1 (nl) * | 2007-12-18 | 2009-06-19 | Asml Netherlands Bv | Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus. |
| NL1036306A1 (nl) * | 2007-12-20 | 2009-06-23 | Asml Netherlands Bv | Lithographic apparatus and in-line cleaning apparatus. |
| US8339572B2 (en) | 2008-01-25 | 2012-12-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20100039628A1 (en) * | 2008-03-19 | 2010-02-18 | Nikon Corporation | Cleaning tool, cleaning method, and device fabricating method |
| NL1036631A1 (nl) * | 2008-03-24 | 2009-09-25 | Asml Netherlands Bv | Immersion Lithographic Apparatus and Device Manufacturing Method. |
| NL1036709A1 (nl) * | 2008-04-24 | 2009-10-27 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
| US8421993B2 (en) * | 2008-05-08 | 2013-04-16 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
| EP2249205B1 (fr) * | 2008-05-08 | 2012-03-07 | ASML Netherlands BV | Appareil lithographique à immersion, dispositif de séchage, appareil de métrologie à immersion et procédé de fabrication d'un dispositif |
| EP2128703A1 (fr) | 2008-05-28 | 2009-12-02 | ASML Netherlands BV | Appareil Lithographique et Procédé d'Exploitation de l'Appareil |
| EP2282188B1 (fr) | 2008-05-28 | 2015-03-11 | Nikon Corporation | Système optique d'éclairage et dispositif d'exposition |
| TW201009895A (en) * | 2008-08-11 | 2010-03-01 | Nikon Corp | Exposure apparatus, maintaining method and device fabricating method |
| NL2003363A (en) | 2008-09-10 | 2010-03-15 | Asml Netherlands Bv | Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method. |
| NL2003333A (en) * | 2008-10-23 | 2010-04-26 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
| TWI438577B (zh) | 2008-12-08 | 2014-05-21 | Asml Netherlands Bv | 微影裝置及器件製造方法 |
| JP2010140958A (ja) * | 2008-12-09 | 2010-06-24 | Canon Inc | 露光装置及びデバイス製造方法 |
| SG173172A1 (en) | 2009-01-28 | 2011-08-29 | Advanced Tech Materials | Lithographic tool in situ clean formulations |
| GB2469112A (en) | 2009-04-03 | 2010-10-06 | Mapper Lithography Ip Bv | Wafer support using controlled capillary liquid layer to hold and release wafer |
| DE102009015717B4 (de) * | 2009-03-31 | 2012-12-13 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren und System zum Erkennen einer Teilchenkontamination in einer Immersionslithographieanlage |
| NL2004362A (en) * | 2009-04-10 | 2010-10-12 | Asml Netherlands Bv | A fluid handling device, an immersion lithographic apparatus and a device manufacturing method. |
| US20110153387A1 (en) * | 2009-12-17 | 2011-06-23 | Google Inc. | Customizing surveys |
| NL2005717A (en) * | 2009-12-18 | 2011-06-21 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
| EP2381310B1 (fr) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Structure de manipulation de fluide et appareil lithographique |
| NL2006818A (en) | 2010-07-02 | 2012-01-03 | Asml Netherlands Bv | A method of adjusting speed and/or routing of a table movement plan and a lithographic apparatus. |
| US9632426B2 (en) * | 2011-01-18 | 2017-04-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | In-situ immersion hood cleaning |
| JP2012256000A (ja) * | 2011-06-10 | 2012-12-27 | Sanyo Electric Co Ltd | 投写型映像表示装置 |
| TWI447843B (zh) * | 2011-12-02 | 2014-08-01 | Univ Nat Central | 晶圓定位方法及其系統 |
| US9919939B2 (en) | 2011-12-06 | 2018-03-20 | Delta Faucet Company | Ozone distribution in a faucet |
| WO2013178484A1 (fr) * | 2012-05-29 | 2013-12-05 | Asml Netherlands B.V. | Procédé de fabrication de dispositif, appareil lithographique et appareil de support |
| JP6313585B2 (ja) * | 2013-12-10 | 2018-04-18 | キヤノン株式会社 | 露光装置及び物品の製造方法 |
| US9658536B2 (en) * | 2014-02-25 | 2017-05-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | In-line inspection and clean for immersion lithography |
| JP6286024B2 (ja) * | 2014-03-07 | 2018-02-28 | 富士フイルム株式会社 | トランジスタの製造方法 |
| WO2015193036A1 (fr) * | 2014-06-16 | 2015-12-23 | Asml Netherlands B.V. | Appareil lithographique, procédé de transfert d'un substrat et procédé de fabrication d'un dispositif |
| JP6367382B2 (ja) * | 2014-06-19 | 2018-08-01 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置、対象物位置決めシステムおよびデバイス製造方法 |
| CN107430354B (zh) * | 2015-03-31 | 2021-04-06 | 株式会社尼康 | 曝光装置、平面显示器的制造方法、元件制造方法、及曝光方法 |
| KR102426760B1 (ko) * | 2015-04-24 | 2022-07-29 | 엘지이노텍 주식회사 | 헤드 마운트 디스플레이 장치 |
| WO2017112795A1 (fr) | 2015-12-21 | 2017-06-29 | Delta Faucet Company | Système de distribution de fluide comprenant un dispositif désinfectant |
| JP6207671B1 (ja) * | 2016-06-01 | 2017-10-04 | キヤノン株式会社 | パターン形成装置、基板配置方法及び物品の製造方法 |
| CN107966880B (zh) | 2017-03-15 | 2019-01-11 | 上海微电子装备(集团)股份有限公司 | 一种用于光刻机的垂向控制方法 |
| JP6985102B2 (ja) * | 2017-10-31 | 2021-12-22 | 株式会社ディスコ | レーザー加工装置 |
| CN111480108B (zh) | 2017-12-22 | 2023-03-28 | 索尼公司 | 隐形眼镜和通信系统 |
| JP6933608B2 (ja) * | 2018-06-01 | 2021-09-08 | ファナック株式会社 | 視覚センサのレンズまたはレンズカバーの異常検出システム |
| WO2020064265A1 (fr) | 2018-09-24 | 2020-04-02 | Asml Netherlands B.V. | Outil de traitement et procédé d'inspection |
| CN110597021B (zh) * | 2019-09-20 | 2021-04-23 | 上海华力微电子有限公司 | 浸没式光刻工艺中晶圆表面残水缺陷的改善方法 |
| JP7427461B2 (ja) * | 2020-02-06 | 2024-02-05 | キヤノン株式会社 | 露光装置、及び物品の製造方法 |
| JP7038163B2 (ja) * | 2020-05-18 | 2022-03-17 | 本田技研工業株式会社 | 外観検査システム |
| JP7536571B2 (ja) | 2020-09-15 | 2024-08-20 | キオクシア株式会社 | 位置計測装置及び計測方法 |
| US20230333480A1 (en) * | 2020-12-23 | 2023-10-19 | Asml Netherlands B.V. | A fluid handling system, method and lithographic apparatus |
| CN113189849B (zh) * | 2021-04-22 | 2023-08-11 | 中国科学院光电技术研究所 | 一种近场光刻浸没系统及其浸没单元和接口模组 |
| US11761905B2 (en) * | 2021-08-26 | 2023-09-19 | Taiwan Semiconductor Manufacturing Company Limited | Inspection layer to improve the detection of defects through optical systems and methods of inspecting semiconductor device for defects |
| DE102023135389A1 (de) * | 2023-12-15 | 2025-06-18 | Nikon Slm Solutions Ag | Reinigungssystem und -verfahren zum Reinigen eines Optikelements in einer Optikeinheit einer Anlage für additive Fertigung |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
| EP0834773A2 (fr) * | 1996-10-07 | 1998-04-08 | Nikon Corporation | Système d'ajustement de focalisation et d'inclinaison pour un appareil lithographique de reproduction avec dispositif d'alignement, appareil de fabrication ou appareil d'inspection |
| JPH10340846A (ja) * | 1997-06-10 | 1998-12-22 | Nikon Corp | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
| WO1999049504A1 (fr) * | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
| EP1420299A2 (fr) * | 2002-11-12 | 2004-05-19 | ASML Netherlands B.V. | Appareil lithographique à immersion et méthode de fabrication d'un dispositif |
| WO2004093160A2 (fr) * | 2003-04-10 | 2004-10-28 | Nikon Corporation | Trajet de ruissellement permettant de recueillir un liquide dans un appareil de lithographie a immersion |
| EP1571695A1 (fr) * | 2002-12-10 | 2005-09-07 | Nikon Corporation | Appareil d'exposition et son procede de fabrication |
Family Cites Families (301)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3139101A (en) | 1962-07-23 | 1964-06-30 | Gen Motors Corp | Sonic surface cleaner |
| GB1242527A (en) * | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
| NL7606482A (nl) * | 1976-06-16 | 1977-12-20 | Philips Nv | Eenkristzl van calcium-gallium-germanium granaat, alsmede substraat vervaardigd van een dergelijk eenkristzl met een epitaxiaal opgegroeide beldo- meinfilm. |
| DE2963537D1 (en) | 1979-07-27 | 1982-10-07 | Tabarelli Werner W | Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer |
| US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
| US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| JPS57117238A (en) | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
| JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
| JPS57153433U (fr) | 1981-03-20 | 1982-09-27 | ||
| JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
| JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
| DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
| DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
| JPS6197918A (ja) * | 1984-10-19 | 1986-05-16 | Hitachi Ltd | X線露光装置 |
| JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
| JPS62121417A (ja) * | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
| JPH0782981B2 (ja) | 1986-02-07 | 1995-09-06 | 株式会社ニコン | 投影露光方法及び装置 |
| JPH0695511B2 (ja) * | 1986-09-17 | 1994-11-24 | 大日本スクリ−ン製造株式会社 | 洗浄乾燥処理方法 |
| JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
| JP2897355B2 (ja) | 1990-07-05 | 1999-05-31 | 株式会社ニコン | アライメント方法,露光装置,並びに位置検出方法及び装置 |
| JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
| JPH05100182A (ja) * | 1991-10-11 | 1993-04-23 | Nikon Corp | レーザトラツプ集塵装置及び集塵方法 |
| JPH05304072A (ja) | 1992-04-08 | 1993-11-16 | Nec Corp | 半導体装置の製造方法 |
| JPH06459A (ja) * | 1992-06-19 | 1994-01-11 | T H I Syst Kk | 洗浄乾燥方法とその装置 |
| JP3246615B2 (ja) | 1992-07-27 | 2002-01-15 | 株式会社ニコン | 照明光学装置、露光装置、及び露光方法 |
| JPH06188169A (ja) | 1992-08-24 | 1994-07-08 | Canon Inc | 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法 |
| JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
| JPH06181157A (ja) | 1992-12-15 | 1994-06-28 | Nikon Corp | 低発塵性の装置 |
| JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
| JP3412704B2 (ja) | 1993-02-26 | 2003-06-03 | 株式会社ニコン | 投影露光方法及び装置、並びに露光装置 |
| JP3306961B2 (ja) * | 1993-03-08 | 2002-07-24 | 株式会社ニコン | 露光装置及び露光方法 |
| AU6364094A (en) | 1993-03-12 | 1994-09-26 | Board Of Regents, The University Of Texas System | Anthracyclines with unusually high activity against cells resistant to doxorubicin and its analogs |
| JPH0750246A (ja) * | 1993-08-06 | 1995-02-21 | Hitachi Ltd | 半導体製造装置 |
| JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
| JP3379200B2 (ja) * | 1994-03-25 | 2003-02-17 | 株式会社ニコン | 位置検出装置 |
| US7365513B1 (en) | 1994-04-01 | 2008-04-29 | Nikon Corporation | Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device |
| US6989647B1 (en) | 1994-04-01 | 2006-01-24 | Nikon Corporation | Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device |
| US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
| US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
| JP3555230B2 (ja) | 1994-05-18 | 2004-08-18 | 株式会社ニコン | 投影露光装置 |
| JP3613288B2 (ja) | 1994-10-18 | 2005-01-26 | 株式会社ニコン | 露光装置用のクリーニング装置 |
| US5623853A (en) | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
| JP3647100B2 (ja) * | 1995-01-12 | 2005-05-11 | キヤノン株式会社 | 検査装置およびこれを用いた露光装置やデバイス生産方法 |
| JPH08195375A (ja) * | 1995-01-17 | 1996-07-30 | Sony Corp | 回転乾燥方法および回転乾燥装置 |
| US6008500A (en) | 1995-04-04 | 1999-12-28 | Nikon Corporation | Exposure apparatus having dynamically isolated reaction frame |
| JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| US6297871B1 (en) * | 1995-09-12 | 2001-10-02 | Nikon Corporation | Exposure apparatus |
| US5798838A (en) | 1996-02-28 | 1998-08-25 | Nikon Corporation | Projection exposure apparatus having function of detecting intensity distribution of spatial image, and method of detecting the same |
| JPH10116760A (ja) | 1996-10-08 | 1998-05-06 | Nikon Corp | 露光装置及び基板保持装置 |
| US6033478A (en) * | 1996-11-05 | 2000-03-07 | Applied Materials, Inc. | Wafer support with improved temperature control |
| SG88823A1 (en) * | 1996-11-28 | 2002-05-21 | Nikon Corp | Projection exposure apparatus |
| JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
| JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
| KR19980032589U (ko) | 1996-12-04 | 1998-09-05 | 최병숙 | 롤러컨베이어 장치 |
| DE69735016T2 (de) | 1996-12-24 | 2006-08-17 | Asml Netherlands B.V. | Lithographisches Gerät mit zwei Objekthaltern |
| US5815246A (en) | 1996-12-24 | 1998-09-29 | U.S. Philips Corporation | Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device |
| USRE40043E1 (en) | 1997-03-10 | 2008-02-05 | Asml Netherlands B.V. | Positioning device having two object holders |
| JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
| DE69817663T2 (de) | 1997-04-23 | 2004-06-24 | Nikon Corp. | Optischer Belichtungsapparat und optisches Reinigungsverfahren |
| US6268904B1 (en) * | 1997-04-23 | 2001-07-31 | Nikon Corporation | Optical exposure apparatus and photo-cleaning method |
| JP3747566B2 (ja) * | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
| JP2002511934A (ja) | 1997-06-18 | 2002-04-16 | ウルリッヒ・ジェイ・クルール | 核酸バイオセンサ診断装置 |
| JPH1116816A (ja) | 1997-06-25 | 1999-01-22 | Nikon Corp | 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法 |
| US5980647A (en) | 1997-07-15 | 1999-11-09 | International Business Machines Corporation | Metal removal cleaning process and apparatus |
| US6085764A (en) | 1997-07-22 | 2000-07-11 | Tdk Corporation | Cleaning apparatus and method |
| JP3445120B2 (ja) | 1997-09-30 | 2003-09-08 | キヤノン株式会社 | 露光装置及びデバイスの製造方法 |
| JP4210871B2 (ja) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | 露光装置 |
| WO1999027568A1 (fr) | 1997-11-21 | 1999-06-03 | Nikon Corporation | Graveur de motifs a projection et procede de sensibilisation a projection |
| JPH11283903A (ja) * | 1998-03-30 | 1999-10-15 | Nikon Corp | 投影光学系検査装置及び同装置を備えた投影露光装置 |
| JPH11162831A (ja) * | 1997-11-21 | 1999-06-18 | Nikon Corp | 投影露光装置及び投影露光方法 |
| JPH11166990A (ja) | 1997-12-04 | 1999-06-22 | Nikon Corp | ステージ装置及び露光装置並びに走査型露光装置 |
| JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
| US6208407B1 (en) | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
| JPH11191525A (ja) | 1997-12-26 | 1999-07-13 | Nikon Corp | 投影露光装置 |
| JP4207240B2 (ja) | 1998-02-20 | 2009-01-14 | 株式会社ニコン | 露光装置用照度計、リソグラフィ・システム、照度計の較正方法およびマイクロデバイスの製造方法 |
| US5913981A (en) | 1998-03-05 | 1999-06-22 | Micron Technology, Inc. | Method of rinsing and drying semiconductor wafers in a chamber with a moveable side wall |
| US5958143A (en) | 1998-04-28 | 1999-09-28 | The Regents Of The University Of California | Cleaning process for EUV optical substrates |
| US6459472B1 (en) | 1998-05-15 | 2002-10-01 | Asml Netherlands B.V. | Lithographic device |
| JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
| JP2000091207A (ja) | 1998-09-14 | 2000-03-31 | Nikon Corp | 投影露光装置及び投影光学系の洗浄方法 |
| JP2000097616A (ja) | 1998-09-22 | 2000-04-07 | Nikon Corp | 干渉計 |
| JP2000311933A (ja) | 1999-04-27 | 2000-11-07 | Canon Inc | 基板保持装置、基板搬送システム、露光装置、塗布装置およびデバイス製造方法ならびに基板保持部クリーニング方法 |
| JP2000354835A (ja) | 1999-06-15 | 2000-12-26 | Toshiba Corp | 超音波洗浄処理方法及びその装置 |
| JP2001013677A (ja) | 1999-06-28 | 2001-01-19 | Shin Etsu Chem Co Ltd | ペリクル収納容器の洗浄方法 |
| US6459672B1 (en) | 1999-09-28 | 2002-10-01 | Sony Corporation | Optical head and optical disc device |
| WO2001035168A1 (fr) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Lithographie interferentielle utilisant des faisceaux de balayage a verrouillage de phase |
| US6496259B2 (en) | 1999-12-28 | 2002-12-17 | Robert John Barish | Optical device providing relative alignment |
| US7187503B2 (en) | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
| US6995930B2 (en) | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
| US6421932B2 (en) * | 2000-02-14 | 2002-07-23 | Hitachi Electronics Engineering Co., Ltd. | Method and apparatus for drying substrate plates |
| JP2001318470A (ja) * | 2000-02-29 | 2001-11-16 | Nikon Corp | 露光装置、マイクロデバイス、フォトマスク、及び露光方法 |
| HU225403B1 (en) * | 2000-03-13 | 2006-11-28 | Andras Dr Boerzsoenyi | Method and apparatus for calibration of flowmeter of liquid flowing in canal |
| JP3996730B2 (ja) * | 2000-03-31 | 2007-10-24 | 株式会社日立製作所 | 半導体部品の製造方法 |
| US6466365B1 (en) | 2000-04-07 | 2002-10-15 | Corning Incorporated | Film coated optical lithography elements and method of making |
| JP3531914B2 (ja) * | 2000-04-14 | 2004-05-31 | キヤノン株式会社 | 光学装置、露光装置及びデバイス製造方法 |
| JP2001300453A (ja) * | 2000-04-20 | 2001-10-30 | Canon Inc | 物品表面の洗浄方法と洗浄装置、およびこれらによる光学素子の製造方法と装置、並びに光学系、露光方法、露光装置、デバイス製造方法 |
| US20020041377A1 (en) | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
| JP2002014005A (ja) | 2000-04-25 | 2002-01-18 | Nikon Corp | 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置 |
| DE10130999A1 (de) | 2000-06-29 | 2002-04-18 | D M S Co | Multifunktions-Reinigungsmodul einer Herstellungseinrichtung für Flachbildschirme und Reinigungsgerät mit Verwendung desselben |
| DE10032238A1 (de) | 2000-07-03 | 2002-01-17 | Siemens Ag | Telefon mit einem kapazitiven Umgebungssensor |
| US6446365B1 (en) | 2000-09-15 | 2002-09-10 | Vermeer Manufacturing Company | Nozzle mount for soft excavation |
| JP3840388B2 (ja) | 2000-09-25 | 2006-11-01 | 東京エレクトロン株式会社 | 基板処理装置 |
| KR100798769B1 (ko) | 2000-09-25 | 2008-01-29 | 동경 엘렉트론 주식회사 | 기판 처리장치 |
| KR100866818B1 (ko) | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
| JP2002289514A (ja) | 2000-12-22 | 2002-10-04 | Nikon Corp | 露光装置及び露光方法 |
| JP4345098B2 (ja) | 2001-02-06 | 2009-10-14 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
| WO2002091078A1 (fr) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Procedes et appareil utilisant un support d'adaptation d'indice |
| DE10123027B4 (de) | 2001-05-11 | 2005-07-21 | Evotec Oai Ag | Vorrichtung zur Untersuchung chemischer und/oder biologischer Proben |
| JP2002336804A (ja) | 2001-05-15 | 2002-11-26 | Nikon Corp | 光学部品の洗浄方法及び露光装置 |
| TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
| US20030023182A1 (en) * | 2001-07-26 | 2003-01-30 | Mault James R. | Respiratory connector for respiratory gas analysis |
| US7145671B2 (en) | 2001-08-16 | 2006-12-05 | Hewlett-Packard Development Company, L.P. | Image forming devices, methods of operating an image forming device, a method of providing consumable information, and a method of operating a printer |
| JP2003124089A (ja) * | 2001-10-09 | 2003-04-25 | Nikon Corp | 荷電粒子線露光装置及び露光方法 |
| US6801301B2 (en) | 2001-10-12 | 2004-10-05 | Canon Kabushiki Kaisha | Exposure apparatus |
| JP4191923B2 (ja) * | 2001-11-02 | 2008-12-03 | 株式会社東芝 | 露光方法および露光装置 |
| EP1313337A1 (fr) * | 2001-11-15 | 2003-05-21 | Siemens Aktiengesellschaft | Procédé permettant de transmettre des informations dans un système cellulaire de radiocommunications comprenant des secteurs |
| EP1329773A3 (fr) | 2002-01-18 | 2006-08-30 | ASML Netherlands B.V. | Appareil lithographique, méthode pour la purification de l'appareil et méthode pour la fabrication d'un dispositif |
| EP1329770A1 (fr) * | 2002-01-18 | 2003-07-23 | ASML Netherlands B.V. | Appareil lithographique et méthode pour la fabrication d un dispositif |
| US7190527B2 (en) * | 2002-03-01 | 2007-03-13 | Carl Zeiss Smt Ag | Refractive projection objective |
| US7154676B2 (en) * | 2002-03-01 | 2006-12-26 | Carl Zeiss Smt A.G. | Very-high aperture projection objective |
| DE10229249A1 (de) * | 2002-03-01 | 2003-09-04 | Zeiss Carl Semiconductor Mfg | Refraktives Projektionsobjektiv mit einer Taille |
| US7092069B2 (en) | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
| DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
| DE10229818A1 (de) | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
| US20030200996A1 (en) | 2002-04-30 | 2003-10-30 | Hiatt William Mark | Method and system for cleaning a wafer chuck |
| KR20040104691A (ko) | 2002-05-03 | 2004-12-10 | 칼 짜이스 에스엠테 아게 | 높은 개구를 갖는 투영 대물렌즈 |
| US6853794B2 (en) * | 2002-07-02 | 2005-02-08 | Lightel Technologies Inc. | Apparatus for cleaning optical fiber connectors and fiber optic parts |
| US20040021061A1 (en) * | 2002-07-30 | 2004-02-05 | Frederik Bijkerk | Photodiode, charged-coupled device and method for the production |
| JP2004071855A (ja) | 2002-08-07 | 2004-03-04 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
| EP1532489A2 (fr) | 2002-08-23 | 2005-05-25 | Nikon Corporation | Systeme optique de projection et procede associe pour la photolithographie, et appareil d'exposition et procede associe |
| JP3922637B2 (ja) | 2002-08-30 | 2007-05-30 | 本田技研工業株式会社 | サイドエアバッグシステム |
| US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
| US6988326B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
| US6954993B1 (en) | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
| US7093375B2 (en) | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
| US6788477B2 (en) | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
| CN101382738B (zh) | 2002-11-12 | 2011-01-12 | Asml荷兰有限公司 | 光刻投射装置 |
| EP2495613B1 (fr) | 2002-11-12 | 2013-07-31 | ASML Netherlands B.V. | Appareil lithographique |
| CN101713932B (zh) | 2002-11-12 | 2012-09-26 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
| EP1420300B1 (fr) * | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Appareil lithographique et méthode de fabrication d'un dispositif |
| SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1429188B1 (fr) | 2002-11-12 | 2013-06-19 | ASML Netherlands B.V. | Appareil lithographique à projection |
| KR100585476B1 (ko) | 2002-11-12 | 2006-06-07 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 디바이스 제조방법 |
| DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE10253679A1 (de) | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
| SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| JP3884371B2 (ja) | 2002-11-26 | 2007-02-21 | 株式会社東芝 | レチクル、露光モニタ方法、露光方法、及び半導体装置の製造方法 |
| TW200412617A (en) | 2002-12-03 | 2004-07-16 | Nikon Corp | Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method |
| DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
| EP1429190B1 (fr) | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Appareil et méthode d'exposition |
| JP4525062B2 (ja) | 2002-12-10 | 2010-08-18 | 株式会社ニコン | 露光装置及びデバイス製造方法、露光システム |
| US7242455B2 (en) | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
| KR101085372B1 (ko) | 2002-12-10 | 2011-11-21 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| KR20050085235A (ko) | 2002-12-10 | 2005-08-29 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| WO2004055803A1 (fr) | 2002-12-13 | 2004-07-01 | Koninklijke Philips Electronics N.V. | Evacuation du liquide dans un procede et un dispositif permettant l'irradiation de points sur une couche |
| US7010958B2 (en) | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
| DE60307322T2 (de) | 2002-12-19 | 2007-10-18 | Koninklijke Philips Electronics N.V. | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
| DE60314668T2 (de) | 2002-12-19 | 2008-03-06 | Koninklijke Philips Electronics N.V. | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
| US6781670B2 (en) | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
| US7156869B1 (en) * | 2003-01-27 | 2007-01-02 | Advanced Cardiovascular Systems, Inc. | Drug-eluting stent and delivery system with tapered stent in shoulder region |
| JP2004007417A (ja) | 2003-02-10 | 2004-01-08 | Fujitsu Ltd | 情報提供システム |
| US7090964B2 (en) | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
| US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
| US6943941B2 (en) | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
| US6853795B2 (en) * | 2003-03-05 | 2005-02-08 | Corning Cable Systems Llc | High density fiber optic distribution frame |
| US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
| US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
| JP4488004B2 (ja) | 2003-04-09 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ流体制御システム |
| KR101724117B1 (ko) | 2003-04-10 | 2017-04-06 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
| CN101813892B (zh) * | 2003-04-10 | 2013-09-25 | 株式会社尼康 | 沉浸式光刻装置及使用光刻工艺制造微器件的方法 |
| JP4656057B2 (ja) | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
| WO2004092830A2 (fr) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Systeme de projection et de recuperation de liquides pour lithographie par immersion |
| KR101289959B1 (ko) * | 2003-04-11 | 2013-07-26 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR101861493B1 (ko) | 2003-04-11 | 2018-05-28 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법 |
| KR101369582B1 (ko) | 2003-04-17 | 2014-03-04 | 가부시키가이샤 니콘 | 액침 리소그래피에서 이용하기 위한 오토포커스 소자의 광학적 배열 |
| JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
| JP4025683B2 (ja) | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
| TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1624481A4 (fr) * | 2003-05-15 | 2008-01-30 | Nikon Corp | Appareil d'exposition et procede de fabrication de dispositif |
| JP2005277363A (ja) * | 2003-05-23 | 2005-10-06 | Nikon Corp | 露光装置及びデバイス製造方法 |
| TWI612556B (zh) * | 2003-05-23 | 2018-01-21 | 尼康股份有限公司 | 曝光裝置、曝光方法及元件製造方法 |
| TW201415536A (zh) | 2003-05-23 | 2014-04-16 | 尼康股份有限公司 | 曝光方法及曝光裝置以及元件製造方法 |
| CN1307456C (zh) | 2003-05-23 | 2007-03-28 | 佳能株式会社 | 投影光学系统、曝光装置及器件的制造方法 |
| JP5058550B2 (ja) * | 2003-05-23 | 2012-10-24 | 株式会社ニコン | 露光装置、露光方法、デバイス製造方法、及び液体回収方法 |
| CN100541717C (zh) | 2003-05-28 | 2009-09-16 | 株式会社尼康 | 曝光方法、曝光装置以及器件制造方法 |
| JP2004356356A (ja) | 2003-05-29 | 2004-12-16 | Oki Electric Ind Co Ltd | 洗浄終了判定方法および洗浄装置 |
| US7356332B2 (en) * | 2003-06-09 | 2008-04-08 | Microsoft Corporation | Mobile information system for presenting information to mobile devices |
| US7317504B2 (en) * | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7684008B2 (en) | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
| JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
| US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
| JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
| JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
| US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
| US7236232B2 (en) | 2003-07-01 | 2007-06-26 | Nikon Corporation | Using isotopically specified fluids as optical elements |
| KR101211451B1 (ko) | 2003-07-09 | 2012-12-12 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
| US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
| US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
| EP1653501B1 (fr) | 2003-07-28 | 2012-09-19 | Nikon Corporation | Appareil d'exposition, procede de production de dispositif, et procede de commande d'appareil d'exposition |
| US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
| US7370659B2 (en) * | 2003-08-06 | 2008-05-13 | Micron Technology, Inc. | Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines |
| US7700267B2 (en) | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
| US7579135B2 (en) | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
| US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
| US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
| US6844206B1 (en) * | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
| JP2005072404A (ja) | 2003-08-27 | 2005-03-17 | Sony Corp | 露光装置および半導体装置の製造方法 |
| WO2005022615A1 (fr) | 2003-08-29 | 2005-03-10 | Nikon Corporation | Recuperateur de liquide, dispositif d'exposition, procede d'exposition, et dispositif de production correspondant |
| US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
| JP4325622B2 (ja) * | 2003-08-29 | 2009-09-02 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
| JP4305095B2 (ja) | 2003-08-29 | 2009-07-29 | 株式会社ニコン | 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法 |
| TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
| KR101523180B1 (ko) | 2003-09-03 | 2015-05-26 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
| US6961186B2 (en) | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
| WO2005031820A1 (fr) | 2003-09-26 | 2005-04-07 | Nikon Corporation | Dispositif d'eclairage de projection, procede de nettoyage et d'entretien du dispositif d'eclairage de projection, et procede de fabrication d'un tel dispositif |
| US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
| JP2005136374A (ja) | 2003-10-06 | 2005-05-26 | Matsushita Electric Ind Co Ltd | 半導体製造装置及びそれを用いたパターン形成方法 |
| TW201738932A (zh) * | 2003-10-09 | 2017-11-01 | 尼康股份有限公司 | 曝光裝置及曝光方法、元件製造方法 |
| EP1524588A1 (fr) | 2003-10-15 | 2005-04-20 | Sony Ericsson Mobile Communications AB | Dispositif d'entrée utilisateur pour un appareil électronique portable |
| EP1524558A1 (fr) | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Appareil lithographique et procédé pour la production d'un dispositif |
| US7678527B2 (en) | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
| US20050084797A1 (en) * | 2003-10-16 | 2005-04-21 | Agfa-Gevaert | Heat-sensitive lithographic printing plate precursor |
| EP1685446A2 (fr) | 2003-11-05 | 2006-08-02 | DSM IP Assets B.V. | Procede et appareil de production de microcircuits |
| US7924397B2 (en) | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
| US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1695148B1 (fr) | 2003-11-24 | 2015-10-28 | Carl Zeiss SMT GmbH | Objectif à immersion |
| US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
| DE602004030481D1 (de) | 2003-12-15 | 2011-01-20 | Nippon Kogaku Kk | Bühnensystem, belichtungsvorrichtung und belichtungsverfahren |
| WO2005059617A2 (fr) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Objectif de projection a grande ouverture et surface d'extremite plane |
| WO2005106589A1 (fr) | 2004-05-04 | 2005-11-10 | Carl Zeiss Smt Ag | Appareil d'exposition par projection microlithographique, et liquide d'immersion destine a l'appareil |
| US7385764B2 (en) | 2003-12-15 | 2008-06-10 | Carl Zeiss Smt Ag | Objectives as a microlithography projection objective with at least one liquid lens |
| US20050185269A1 (en) | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
| JP4323946B2 (ja) | 2003-12-19 | 2009-09-02 | キヤノン株式会社 | 露光装置 |
| US7460206B2 (en) | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
| WO2005059645A2 (fr) | 2003-12-19 | 2005-06-30 | Carl Zeiss Smt Ag | Objectif de projection de microlithographie comprenant des éléments cristallins |
| US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7589818B2 (en) | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
| US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20050147920A1 (en) | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
| US7088422B2 (en) | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
| US7145641B2 (en) | 2003-12-31 | 2006-12-05 | Asml Netherlands, B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
| DE602004027162D1 (de) | 2004-01-05 | 2010-06-24 | Nippon Kogaku Kk | Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren |
| JP4371822B2 (ja) | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
| JP4429023B2 (ja) | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| US20050153424A1 (en) | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
| KR101417706B1 (ko) | 2004-01-14 | 2014-07-08 | 칼 짜이스 에스엠테 게엠베하 | 반사굴절식 투영 대물렌즈 |
| KR101165862B1 (ko) | 2004-01-16 | 2012-07-17 | 칼 짜이스 에스엠티 게엠베하 | 편광변조 광학소자 |
| WO2005069078A1 (fr) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Dispositif d'exposition par projection microlithographique avec objectif de projection par immersion |
| KR101204157B1 (ko) | 2004-01-20 | 2012-11-22 | 칼 짜이스 에스엠테 게엠베하 | 마이크로 리소그래픽 투영 노광 장치 및 그 투영 렌즈를 위한 측정 장치 |
| US7026259B2 (en) | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
| US7391501B2 (en) | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
| WO2005076321A1 (fr) * | 2004-02-03 | 2005-08-18 | Nikon Corporation | Appareil d’exposition et procede de fabrication d’un dispositif |
| US8852850B2 (en) | 2004-02-03 | 2014-10-07 | Rochester Institute Of Technology | Method of photolithography using a fluid and a system thereof |
| US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2005076084A1 (fr) | 2004-02-09 | 2005-08-18 | Carl Zeiss Smt Ag | Objectif de projection pour appareil d'exposition microlithographique a projection |
| WO2005076323A1 (fr) | 2004-02-10 | 2005-08-18 | Nikon Corporation | Aligneur, procede de fabrication de dispositif, procede de maintenance et procede d'alignement |
| US20070165198A1 (en) | 2004-02-13 | 2007-07-19 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
| EP1721201A1 (fr) | 2004-02-18 | 2006-11-15 | Corning Incorporated | Systeme d'imagerie catadioptrique pour imagerie a ouverture numerique elevee avec lumiere a uv lointain |
| DE102004007946A1 (de) | 2004-02-18 | 2005-09-15 | Tyco Electronics Raychem Gmbh | Gassensoranordnung in integrierter Bauweise |
| US8023100B2 (en) | 2004-02-20 | 2011-09-20 | Nikon Corporation | Exposure apparatus, supply method and recovery method, exposure method, and device producing method |
| US20050205108A1 (en) | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
| US7027125B2 (en) | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
| US7084960B2 (en) | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
| US7227619B2 (en) | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7034917B2 (en) | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
| US7295283B2 (en) | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7712905B2 (en) | 2004-04-08 | 2010-05-11 | Carl Zeiss Smt Ag | Imaging system with mirror group |
| US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7271878B2 (en) | 2004-04-22 | 2007-09-18 | International Business Machines Corporation | Wafer cell for immersion lithography |
| US7244665B2 (en) | 2004-04-29 | 2007-07-17 | Micron Technology, Inc. | Wafer edge ring structures and methods of formation |
| US7379159B2 (en) | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1747499A2 (fr) | 2004-05-04 | 2007-01-31 | Nikon Corporation | Appareil et procede d'approvisionnement en fluide pour la lithographie par immersion |
| US7091502B2 (en) | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
| KR101213831B1 (ko) | 2004-05-17 | 2012-12-24 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
| US7616383B2 (en) * | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| CN101833247B (zh) | 2004-06-04 | 2013-11-06 | 卡尔蔡司Smt有限责任公司 | 微光刻投影曝光系统的投影物镜的光学测量的测量系统 |
| CN101776850B (zh) | 2004-06-09 | 2013-03-20 | 尼康股份有限公司 | 曝光装置及元件制造方法 |
| US7463330B2 (en) * | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7224427B2 (en) * | 2004-08-03 | 2007-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Megasonic immersion lithography exposure apparatus and method |
| US7304715B2 (en) | 2004-08-13 | 2007-12-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7446850B2 (en) * | 2004-12-03 | 2008-11-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101339887B1 (ko) | 2004-12-06 | 2013-12-10 | 가부시키가이샤 니콘 | 메인터넌스 방법, 메인터넌스 기기, 노광 장치, 및디바이스 제조 방법 |
| US7248334B2 (en) * | 2004-12-07 | 2007-07-24 | Asml Netherlands B.V. | Sensor shield |
| JP4752473B2 (ja) | 2004-12-09 | 2011-08-17 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
| US7880860B2 (en) * | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7450217B2 (en) | 2005-01-12 | 2008-11-11 | Asml Netherlands B.V. | Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US7262422B2 (en) | 2005-07-01 | 2007-08-28 | Spansion Llc | Use of supercritical fluid to dry wafer and clean lens in immersion lithography |
| US8125610B2 (en) * | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
| JP5100182B2 (ja) | 2007-03-30 | 2012-12-19 | キヤノン株式会社 | データ転送装置及びデータ受信装置並びにデータ転送システム |
| US9019466B2 (en) * | 2007-07-24 | 2015-04-28 | Asml Netherlands B.V. | Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system |
| JP5440937B2 (ja) * | 2010-02-01 | 2014-03-12 | 日本電気株式会社 | スレッド数制限装置、スレッド数制限方法およびスレッド数制限プログラム |
-
2004
- 2004-05-21 TW TW103145927A patent/TWI612556B/zh not_active IP Right Cessation
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- 2004-05-24 EP EP12155097A patent/EP2466617A3/fr not_active Withdrawn
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
| EP0834773A2 (fr) * | 1996-10-07 | 1998-04-08 | Nikon Corporation | Système d'ajustement de focalisation et d'inclinaison pour un appareil lithographique de reproduction avec dispositif d'alignement, appareil de fabrication ou appareil d'inspection |
| JPH10340846A (ja) * | 1997-06-10 | 1998-12-22 | Nikon Corp | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
| WO1999049504A1 (fr) * | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
| EP1420299A2 (fr) * | 2002-11-12 | 2004-05-19 | ASML Netherlands B.V. | Appareil lithographique à immersion et méthode de fabrication d'un dispositif |
| EP1571695A1 (fr) * | 2002-12-10 | 2005-09-07 | Nikon Corporation | Appareil d'exposition et son procede de fabrication |
| WO2004093160A2 (fr) * | 2003-04-10 | 2004-10-28 | Nikon Corporation | Trajet de ruissellement permettant de recueillir un liquide dans un appareil de lithographie a immersion |
Non-Patent Citations (1)
| Title |
|---|
| See also references of WO2004105107A1 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8941810B2 (en) | 2005-12-30 | 2015-01-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8947631B2 (en) | 2005-12-30 | 2015-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US9436096B2 (en) | 2005-12-30 | 2016-09-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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