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AU2001232341A1 - Iii nitride compound semiconductor element and electrode forming method - Google Patents

Iii nitride compound semiconductor element and electrode forming method

Info

Publication number
AU2001232341A1
AU2001232341A1 AU2001232341A AU3234101A AU2001232341A1 AU 2001232341 A1 AU2001232341 A1 AU 2001232341A1 AU 2001232341 A AU2001232341 A AU 2001232341A AU 3234101 A AU3234101 A AU 3234101A AU 2001232341 A1 AU2001232341 A1 AU 2001232341A1
Authority
AU
Australia
Prior art keywords
semiconductor element
forming method
compound semiconductor
iii nitride
electrode forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001232341A
Inventor
Makoto Asai
Yasuo Koide
Masanori Murakami
Naoki Shibata
Toshiya Uemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Publication of AU2001232341A1 publication Critical patent/AU2001232341A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10D64/0116—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10P95/50—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
AU2001232341A 2000-03-27 2001-02-19 Iii nitride compound semiconductor element and electrode forming method Abandoned AU2001232341A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-85932 2000-03-27
JP2000085932A JP3846150B2 (en) 2000-03-27 2000-03-27 Group III nitride compound semiconductor device and electrode forming method
PCT/JP2001/001178 WO2001073829A1 (en) 2000-03-27 2001-02-19 Iii nitride compound semiconductor element and electrode forming method

Publications (1)

Publication Number Publication Date
AU2001232341A1 true AU2001232341A1 (en) 2001-10-08

Family

ID=18602177

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001232341A Abandoned AU2001232341A1 (en) 2000-03-27 2001-02-19 Iii nitride compound semiconductor element and electrode forming method

Country Status (4)

Country Link
US (2) US6806571B2 (en)
JP (1) JP3846150B2 (en)
AU (1) AU2001232341A1 (en)
WO (1) WO2001073829A1 (en)

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JP3778765B2 (en) * 2000-03-24 2006-05-24 三洋電機株式会社 Nitride-based semiconductor device and manufacturing method thereof
US7928424B2 (en) * 2004-03-11 2011-04-19 Epistar Corporation Nitride-based light-emitting device
US9524869B2 (en) 2004-03-11 2016-12-20 Epistar Corporation Nitride-based semiconductor light-emitting device
US8562738B2 (en) 2004-03-11 2013-10-22 Epistar Corporation Nitride-based light-emitting device
TWI249255B (en) * 2004-04-07 2006-02-11 Epitech Corp Ltd Nitride light-emitting diode and mthod for manufacturing the same
JP5015417B2 (en) * 2004-06-09 2012-08-29 住友電気工業株式会社 GaN crystal manufacturing method
JP4841844B2 (en) 2005-01-05 2011-12-21 三菱電機株式会社 Semiconductor element
JP4925601B2 (en) * 2005-04-18 2012-05-09 三菱電機株式会社 Semiconductor device
DE102005041643A1 (en) * 2005-08-29 2007-03-01 Forschungsverbund Berlin E.V. Semiconductor method for producing an isolated semiconductor substrate uses a masking layer with holes and an output layer
JP2007134388A (en) * 2005-11-08 2007-05-31 Sharp Corp Nitride-based semiconductor device and manufacturing method thereof
JP4738999B2 (en) * 2005-12-06 2011-08-03 豊田合成株式会社 Semiconductor optical device manufacturing method
US7772604B2 (en) 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
JP5068020B2 (en) * 2006-02-20 2012-11-07 シャープ株式会社 Manufacturing method of nitride semiconductor light emitting device
JP5047508B2 (en) * 2006-02-27 2012-10-10 シャープ株式会社 Manufacturing method of nitride semiconductor light emitting device
US20070240631A1 (en) * 2006-04-14 2007-10-18 Applied Materials, Inc. Epitaxial growth of compound nitride semiconductor structures
WO2008042351A2 (en) 2006-10-02 2008-04-10 Illumitex, Inc. Led system and method
JP2010507262A (en) * 2006-10-18 2010-03-04 ナイテック インコーポレイテッド Vertical deep ultraviolet light emitting diode
KR20100122485A (en) 2008-02-08 2010-11-22 일루미텍스, 인크. System and method for emitter layer shaping
KR101515100B1 (en) * 2008-10-21 2015-04-24 삼성전자주식회사 Light emitting diode and method for manufacturing the same
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
JP4886766B2 (en) * 2008-12-25 2012-02-29 株式会社東芝 Semiconductor light emitting device
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
JP5526712B2 (en) * 2009-11-05 2014-06-18 豊田合成株式会社 Semiconductor light emitting device
JP5437114B2 (en) * 2010-03-02 2014-03-12 次世代パワーデバイス技術研究組合 Manufacturing method of semiconductor transistor
FR2972563B1 (en) * 2011-03-07 2013-03-01 Altis Semiconductor Snc METHOD FOR TREATING AN OXIDIZED METAL NITRIDE LAYER
JP5928366B2 (en) * 2013-02-13 2016-06-01 豊田合成株式会社 Method for producing group III nitride semiconductor
TWI577046B (en) * 2014-12-23 2017-04-01 錼創科技股份有限公司 Semiconductor light emitting element and manufacturing method thereof
CN113471060B (en) * 2021-05-27 2022-09-09 南昌大学 A kind of preparation method of reducing AlN thin film micro-voids on silicon substrate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164850A (en) * 1990-01-29 1992-11-17 Sanyo Electric Co., Ltd. Liquid crystal device including tantalum nitride with specific nitriding ratio
JP2803742B2 (en) 1993-04-28 1998-09-24 日亜化学工業株式会社 Gallium nitride-based compound semiconductor light emitting device and method for forming electrode thereof
DE69433926T2 (en) 1993-04-28 2005-07-21 Nichia Corp., Anan A semiconductor device of a gallium nitride III-V semiconductor compound
JPH0832115A (en) * 1994-07-19 1996-02-02 Sharp Corp Electrode structure and manufacturing method thereof
JPH10247747A (en) * 1997-03-05 1998-09-14 Toshiba Corp Semiconductor light emitting device and method of manufacturing the same
JPH10321954A (en) 1997-05-15 1998-12-04 Fuji Electric Co Ltd Group III nitride semiconductor device and method of manufacturing the same
TW501160B (en) * 1998-05-08 2002-09-01 Samsung Electronics Co Ltd Method of activating compound semiconductor layer to p-type compound semiconductor layer
JPH11330546A (en) * 1998-05-12 1999-11-30 Fuji Electric Co Ltd Group III nitride semiconductor and method of manufacturing the same

Also Published As

Publication number Publication date
JP3846150B2 (en) 2006-11-15
JP2001274459A (en) 2001-10-05
US7018915B2 (en) 2006-03-28
US20040222499A1 (en) 2004-11-11
US6806571B2 (en) 2004-10-19
US20030155575A1 (en) 2003-08-21
WO2001073829A1 (en) 2001-10-04

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