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AU2001224025A1 - Group iii nitride compound semiconductor light-emitting device and method for producing the same - Google Patents

Group iii nitride compound semiconductor light-emitting device and method for producing the same

Info

Publication number
AU2001224025A1
AU2001224025A1 AU2001224025A AU2402501A AU2001224025A1 AU 2001224025 A1 AU2001224025 A1 AU 2001224025A1 AU 2001224025 A AU2001224025 A AU 2001224025A AU 2402501 A AU2402501 A AU 2402501A AU 2001224025 A1 AU2001224025 A1 AU 2001224025A1
Authority
AU
Australia
Prior art keywords
producing
emitting device
same
semiconductor light
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001224025A
Inventor
Naohisa Nagasaka
Toshiya Uemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Publication of AU2001224025A1 publication Critical patent/AU2001224025A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
AU2001224025A 2000-05-23 2000-12-25 Group iii nitride compound semiconductor light-emitting device and method for producing the same Abandoned AU2001224025A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-150987 2000-05-23
JP2000150987A JP3864670B2 (en) 2000-05-23 2000-05-23 Method for manufacturing group III nitride compound semiconductor light emitting device
PCT/JP2000/009220 WO2001091196A1 (en) 2000-05-23 2000-12-25 Group iii nitride compound semiconductor light-emitting device and method for producing the same

Publications (1)

Publication Number Publication Date
AU2001224025A1 true AU2001224025A1 (en) 2001-12-03

Family

ID=18656614

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001224025A Abandoned AU2001224025A1 (en) 2000-05-23 2000-12-25 Group iii nitride compound semiconductor light-emitting device and method for producing the same

Country Status (9)

Country Link
US (1) US6861281B2 (en)
EP (1) EP1302989B1 (en)
JP (1) JP3864670B2 (en)
KR (1) KR100581321B1 (en)
CN (1) CN1206747C (en)
AU (1) AU2001224025A1 (en)
DE (1) DE60043398D1 (en)
TW (1) TW484241B (en)
WO (1) WO2001091196A1 (en)

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US20050051781A1 (en) * 2003-09-08 2005-03-10 United Epitaxy Company, Ltd. Light emitting diode and method of making the same
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JP4897210B2 (en) * 2004-11-18 2012-03-14 ラピスセミコンダクタ株式会社 Semiconductor device structure and manufacturing method thereof
JP4792802B2 (en) * 2005-04-26 2011-10-12 住友電気工業株式会社 Surface treatment method of group III nitride crystal
KR100667506B1 (en) * 2005-08-02 2007-01-10 엘지전자 주식회사 Light Emitting Diode Having Metal Nitride Film And Method Of Manufacturing The Same
JP2007042857A (en) * 2005-08-03 2007-02-15 Nichia Chem Ind Ltd Semiconductor light emitting device, method for manufacturing semiconductor device, and semiconductor light emitting device
WO2007040295A1 (en) * 2005-10-04 2007-04-12 Seoul Opto Device Co., Ltd. (al, ga, in)n-based compound semiconductor and method of fabricating the same
JP4929924B2 (en) * 2006-08-25 2012-05-09 サンケン電気株式会社 Semiconductor light emitting device, manufacturing method thereof, and composite semiconductor device
JP2009032971A (en) * 2007-07-27 2009-02-12 Rohm Co Ltd Method of manufacturing nitride semiconductor device
US8217488B2 (en) * 2010-07-19 2012-07-10 Walsin Lihwa Corporation GaN light emitting diode and method for increasing light extraction on GaN light emitting diode via sapphire shaping
US8723201B2 (en) 2010-08-20 2014-05-13 Invenlux Corporation Light-emitting devices with substrate coated with optically denser material
US8436386B2 (en) 2011-06-03 2013-05-07 Micron Technology, Inc. Solid state lighting devices having side reflectivity and associated methods of manufacture
KR20130117474A (en) * 2012-04-18 2013-10-28 서울바이오시스 주식회사 Light emitting diode including substrate having patterns on the back side and fabrication method for the same
JP5974808B2 (en) * 2012-10-17 2016-08-23 日亜化学工業株式会社 Semiconductor light emitting device
JP6176224B2 (en) * 2013-12-25 2017-08-09 日亜化学工業株式会社 Semiconductor element, semiconductor device including the same, and method for manufacturing semiconductor element
DE102015119553A1 (en) 2015-11-12 2017-05-18 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor chip, optoelectronic component with a radiation-emitting semiconductor chip and method for coating a radiation-emitting semiconductor chip
JP6683003B2 (en) 2016-05-11 2020-04-15 日亜化学工業株式会社 Semiconductor element, semiconductor device, and method for manufacturing semiconductor element
JP6720747B2 (en) 2016-07-19 2020-07-08 日亜化学工業株式会社 Semiconductor device, base and manufacturing method thereof
EP4177973A4 (en) 2020-10-27 2023-09-27 Samsung Electronics Co., Ltd. DISPLAY DEVICE AND ASSOCIATED LIGHT SOURCE DEVICE
CN114899289A (en) * 2022-05-09 2022-08-12 安徽三安光电有限公司 Light emitting diode, manufacturing method thereof and light emitting device
CN117153878B (en) * 2023-10-31 2024-02-20 江西兆驰半导体有限公司 HEMT epitaxial structure and preparation method thereof, HEMT device

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Also Published As

Publication number Publication date
JP3864670B2 (en) 2007-01-10
KR20030001553A (en) 2003-01-06
EP1302989A4 (en) 2006-09-06
CN1452791A (en) 2003-10-29
KR100581321B1 (en) 2006-05-22
EP1302989A1 (en) 2003-04-16
JP2001332762A (en) 2001-11-30
WO2001091196A1 (en) 2001-11-29
US6861281B2 (en) 2005-03-01
CN1206747C (en) 2005-06-15
US20040087050A1 (en) 2004-05-06
EP1302989B1 (en) 2009-11-25
TW484241B (en) 2002-04-21
DE60043398D1 (en) 2010-01-07

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