[go: up one dir, main page]

AU2002221142A1 - Semiconductor photocathode - Google Patents

Semiconductor photocathode

Info

Publication number
AU2002221142A1
AU2002221142A1 AU2002221142A AU2114202A AU2002221142A1 AU 2002221142 A1 AU2002221142 A1 AU 2002221142A1 AU 2002221142 A AU2002221142 A AU 2002221142A AU 2114202 A AU2114202 A AU 2114202A AU 2002221142 A1 AU2002221142 A1 AU 2002221142A1
Authority
AU
Australia
Prior art keywords
semiconductor photocathode
photocathode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002221142A
Inventor
Toru Hirohata
Hirofumi Kan
Kuniyoshi Mori
Minoru Niigaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of AU2002221142A1 publication Critical patent/AU2002221142A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
AU2002221142A 2000-12-18 2001-12-18 Semiconductor photocathode Abandoned AU2002221142A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-384009 2000-12-18
JP2000384009A JP2002184302A (en) 2000-12-18 2000-12-18 Semiconductor photocathode
PCT/JP2001/011095 WO2002050858A1 (en) 2000-12-18 2001-12-18 Semiconductor photocathode

Publications (1)

Publication Number Publication Date
AU2002221142A1 true AU2002221142A1 (en) 2002-07-01

Family

ID=18851560

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002221142A Abandoned AU2002221142A1 (en) 2000-12-18 2001-12-18 Semiconductor photocathode

Country Status (6)

Country Link
US (1) US6917058B2 (en)
JP (1) JP2002184302A (en)
KR (1) KR20030063435A (en)
CN (1) CN1291435C (en)
AU (1) AU2002221142A1 (en)
WO (1) WO2002050858A1 (en)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1365260A4 (en) * 2001-01-31 2013-01-23 Hamamatsu Photonics Kk Electron beam detector, scanning type electron microscope, mass spectrometer, and ion detector
JP4002167B2 (en) * 2002-11-14 2007-10-31 浜松ホトニクス株式会社 Photocathode
US20050195318A1 (en) * 2003-02-07 2005-09-08 Takahiro Komatsu Organic information reading unit and information reading device using the same
JP4096877B2 (en) * 2003-02-07 2008-06-04 松下電器産業株式会社 Information reading element and information reading device using the same
JP2005032793A (en) * 2003-07-08 2005-02-03 Matsushita Electric Ind Co Ltd Organic photoelectric conversion element
JP2005032852A (en) * 2003-07-09 2005-02-03 Matsushita Electric Ind Co Ltd Organic photoelectric conversion element
WO2005096403A2 (en) * 2004-03-31 2005-10-13 Matsushita Electric Industrial Co., Ltd. Organic photoelectric conversion element utilizing an inorganic buffer layer placed between an electrode and the active material
JP4647955B2 (en) * 2004-08-17 2011-03-09 浜松ホトニクス株式会社 Photocathode plate and electron tube
JP4856883B2 (en) * 2005-03-03 2012-01-18 富士フイルム株式会社 Functional element, electrochromic element, optical device and photographing unit
JP2007080799A (en) * 2005-09-16 2007-03-29 Hamamatsu Photonics Kk Photo cathode and electron tube
JP4939033B2 (en) * 2005-10-31 2012-05-23 浜松ホトニクス株式会社 Photocathode
KR100809427B1 (en) * 2006-07-10 2008-03-05 삼성전기주식회사 Photoelectric conversion device and manufacturing method thereof
JP2008135350A (en) * 2006-11-29 2008-06-12 Hamamatsu Photonics Kk Semiconductor photocathode
CN101205060B (en) 2006-12-20 2011-05-04 清华大学 Preparation of nano-carbon tube array
CN101205059B (en) * 2006-12-20 2010-09-29 清华大学 Preparation method of carbon nanotube array
CN101205061B (en) * 2006-12-22 2011-03-23 鸿富锦精密工业（深圳）有限公司 Preparation of nano-carbon tube array
CN101206980B (en) * 2006-12-22 2010-04-14 清华大学 Preparation method of field emission cathode
CN101206979B (en) * 2006-12-22 2010-05-19 清华大学 Preparation method of field emission cathode
CN101209833B (en) * 2006-12-27 2010-09-29 清华大学 Preparation method of carbon nanotube array
CN101209832B (en) * 2006-12-29 2010-05-12 清华大学 Preparation of carbon nano-tube array
JP2012516023A (en) * 2009-01-22 2012-07-12 ビーエイイー・システムズ・インフォメーション・アンド・エレクトロニック・システムズ・インテグレイション・インコーポレーテッド Photocathode improved by corner cube
KR101010392B1 (en) * 2009-01-29 2011-01-21 이상범 Shading device
US10197501B2 (en) 2011-12-12 2019-02-05 Kla-Tencor Corporation Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors
US9496425B2 (en) 2012-04-10 2016-11-15 Kla-Tencor Corporation Back-illuminated sensor with boron layer
US9601299B2 (en) 2012-08-03 2017-03-21 Kla-Tencor Corporation Photocathode including silicon substrate with boron layer
US9426400B2 (en) 2012-12-10 2016-08-23 Kla-Tencor Corporation Method and apparatus for high speed acquisition of moving images using pulsed illumination
US9478402B2 (en) 2013-04-01 2016-10-25 Kla-Tencor Corporation Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
US9347890B2 (en) 2013-12-19 2016-05-24 Kla-Tencor Corporation Low-noise sensor and an inspection system using a low-noise sensor
US9748294B2 (en) 2014-01-10 2017-08-29 Hamamatsu Photonics K.K. Anti-reflection layer for back-illuminated sensor
US9410901B2 (en) 2014-03-17 2016-08-09 Kla-Tencor Corporation Image sensor, an inspection system and a method of inspecting an article
US9767986B2 (en) 2014-08-29 2017-09-19 Kla-Tencor Corporation Scanning electron microscope and methods of inspecting and reviewing samples
FR3034908B1 (en) * 2015-04-08 2017-05-05 Photonis France MULTIBAND PHOTOCATHODE AND ASSOCIATED DETECTOR
US9860466B2 (en) 2015-05-14 2018-01-02 Kla-Tencor Corporation Sensor with electrically controllable aperture for inspection and metrology systems
US10748730B2 (en) 2015-05-21 2020-08-18 Kla-Tencor Corporation Photocathode including field emitter array on a silicon substrate with boron layer
US10462391B2 (en) 2015-08-14 2019-10-29 Kla-Tencor Corporation Dark-field inspection using a low-noise sensor
US10778925B2 (en) 2016-04-06 2020-09-15 Kla-Tencor Corporation Multiple column per channel CCD sensor architecture for inspection and metrology
US10313622B2 (en) 2016-04-06 2019-06-04 Kla-Tencor Corporation Dual-column-parallel CCD sensor and inspection systems using a sensor
JP6959882B2 (en) * 2018-02-22 2021-11-05 浜松ホトニクス株式会社 Ion detector
US11114489B2 (en) 2018-06-18 2021-09-07 Kla-Tencor Corporation Back-illuminated sensor and a method of manufacturing a sensor
US10615599B2 (en) 2018-07-12 2020-04-07 John Bennett Efficient low-voltage grid for a cathode
US10566168B1 (en) 2018-08-10 2020-02-18 John Bennett Low voltage electron transparent pellicle
US10943760B2 (en) 2018-10-12 2021-03-09 Kla Corporation Electron gun and electron microscope
US11114491B2 (en) 2018-12-12 2021-09-07 Kla Corporation Back-illuminated sensor and a method of manufacturing a sensor
US11417492B2 (en) 2019-09-26 2022-08-16 Kla Corporation Light modulated electron source
US11848350B2 (en) 2020-04-08 2023-12-19 Kla Corporation Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer
US12308198B2 (en) 2022-11-22 2025-05-20 L3Harris Technologies, Inc. Lattice matched photocathodes for extended wavelengths

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3958143A (en) * 1973-01-15 1976-05-18 Varian Associates Long-wavelength photoemission cathode
US5047821A (en) 1990-03-15 1991-09-10 Intevac, Inc. Transferred electron III-V semiconductor photocathode
US5680007A (en) 1994-12-21 1997-10-21 Hamamatsu Photonics K.K. Photomultiplier having a photocathode comprised of a compound semiconductor material
JP3122327B2 (en) * 1995-02-27 2001-01-09 浜松ホトニクス株式会社 How to use photoemission surface and how to use electron tube
US6005257A (en) * 1995-09-13 1999-12-21 Litton Systems, Inc. Transmission mode photocathode with multilayer active layer for night vision and method
JPH09213206A (en) * 1996-02-06 1997-08-15 Hamamatsu Photonics Kk Transmission type photoelectric surface, manufacture thereof and photoelectric transfer tube using the transmission type photoelectric surface
JP3806514B2 (en) * 1998-06-22 2006-08-09 浜松ホトニクス株式会社 Photocathode and manufacturing method thereof
JP3806515B2 (en) * 1998-06-30 2006-08-09 浜松ホトニクス株式会社 Semiconductor photocathode
JP2000090816A (en) * 1998-09-11 2000-03-31 Daido Steel Co Ltd Polarized electron beam generator

Also Published As

Publication number Publication date
US6917058B2 (en) 2005-07-12
WO2002050858A1 (en) 2002-06-27
CN1481569A (en) 2004-03-10
CN1291435C (en) 2006-12-20
US20040056279A1 (en) 2004-03-25
KR20030063435A (en) 2003-07-28
JP2002184302A (en) 2002-06-28

Similar Documents

Publication Publication Date Title
AU2002221142A1 (en) Semiconductor photocathode
AU2001234972A1 (en) Semiconductor structure
AU2002356951A1 (en) Photocathode
AU2001262847A1 (en) Language-understanding
AU2001275242A1 (en) Symmetrical feed-thru
AU2001292739A1 (en) 1-oxorapamycins
AU2000267458A1 (en) Hypercomputer
AU2001254546A1 (en) Aminopiperidines
AU2001220246A1 (en) Neckphone
AU2001239310A1 (en) Decahydro-isoquinolines
AU2001266345A1 (en) Five-membered-ring compound
AU2001258349A1 (en) Bisacylguanidine
AU2001264506A1 (en) Electrospray emitter
AU2001279754A1 (en) Indoloquinazolinones
AU2001290931A1 (en) Ski-snowboard
AU2001285886A1 (en) 2-guanidino-4-aryl-quinazoline
AU2002215217A1 (en) Semiconductor photocathode
AU2001258924A1 (en) Microsatellite-aflp
AU2001293852A1 (en) Sulfonylguanidine
AU2002221927A1 (en) Electrospray interface
AU2001281921A1 (en) Bdellosomes
AU2001291876A1 (en) Triazolo-epothilones
AU2001246864A1 (en) Hypotensors
AU2001226668A1 (en) Crankshaft-starter-generator
AU2001262711A1 (en) Cytoprotectors