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AU2001236109A1 - Iii nitride compound semiconductor device - Google Patents

Iii nitride compound semiconductor device

Info

Publication number
AU2001236109A1
AU2001236109A1 AU2001236109A AU3610901A AU2001236109A1 AU 2001236109 A1 AU2001236109 A1 AU 2001236109A1 AU 2001236109 A AU2001236109 A AU 2001236109A AU 3610901 A AU3610901 A AU 3610901A AU 2001236109 A1 AU2001236109 A1 AU 2001236109A1
Authority
AU
Australia
Prior art keywords
semiconductor device
compound semiconductor
iii nitride
nitride compound
iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001236109A
Inventor
Atsuo Hirano
Shigemi Horiuchi
Toshiya Uemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Publication of AU2001236109A1 publication Critical patent/AU2001236109A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
AU2001236109A 2000-03-07 2001-03-06 Iii nitride compound semiconductor device Abandoned AU2001236109A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000062223A JP4026294B2 (en) 2000-03-07 2000-03-07 Method for producing group III nitride compound semiconductor device
JP2000-062223 2000-03-07
PCT/JP2001/001736 WO2001067524A1 (en) 2000-03-07 2001-03-06 Iii nitride compound semiconductor device

Publications (1)

Publication Number Publication Date
AU2001236109A1 true AU2001236109A1 (en) 2001-09-17

Family

ID=18582261

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001236109A Abandoned AU2001236109A1 (en) 2000-03-07 2001-03-06 Iii nitride compound semiconductor device

Country Status (7)

Country Link
US (1) US7095059B2 (en)
EP (1) EP1271662A4 (en)
JP (1) JP4026294B2 (en)
KR (1) KR100542165B1 (en)
AU (1) AU2001236109A1 (en)
TW (1) TW527736B (en)
WO (1) WO2001067524A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5800452B2 (en) * 2001-07-24 2015-10-28 日亜化学工業株式会社 Semiconductor light emitting device
JP4055503B2 (en) 2001-07-24 2008-03-05 日亜化学工業株式会社 Semiconductor light emitting device
US8294172B2 (en) 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
CN101088167B (en) * 2005-11-28 2011-07-06 三菱电机株式会社 Solar cell unit
US8173995B2 (en) 2005-12-23 2012-05-08 E. I. Du Pont De Nemours And Company Electronic device including an organic active layer and process for forming the electronic device
JP4290747B2 (en) * 2006-06-23 2009-07-08 シャープ株式会社 Photoelectric conversion element and photoelectric conversion element with interconnector
KR20090042285A (en) * 2006-08-02 2009-04-29 가부시키가이샤 아루박 Film Formation Method and Film Forming Device
KR100999800B1 (en) * 2010-02-04 2010-12-08 엘지이노텍 주식회사 Light emitting device package and its manufacturing method
DE102011001999A1 (en) 2011-04-12 2012-10-18 Schott Solar Ag solar cell
DE102011001998A1 (en) * 2011-04-12 2012-10-18 Schott Solar Ag solar cell
EP2881982B1 (en) * 2013-12-05 2019-09-04 IMEC vzw Method for fabricating cmos compatible contact layers in semiconductor devices
JP6805674B2 (en) * 2016-09-21 2020-12-23 豊田合成株式会社 Light emitting element and its manufacturing method
US20190189850A1 (en) * 2017-12-19 2019-06-20 Epistar Corporation Light-emitting device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164955A (en) * 1991-06-17 1992-11-17 Eastman Kodak Company Laser diode with volume refractive index grating
DE69433926T2 (en) 1993-04-28 2005-07-21 Nichia Corp., Anan A semiconductor device of a gallium nitride III-V semiconductor compound
JP3620926B2 (en) 1995-06-16 2005-02-16 豊田合成株式会社 P-conducting group III nitride semiconductor electrode, electrode forming method and device
JP3009095B2 (en) * 1995-10-27 2000-02-14 日亜化学工業株式会社 Nitride semiconductor light emitting device
JP3292044B2 (en) 1996-05-31 2002-06-17 豊田合成株式会社 P-conductivity group III nitride semiconductor electrode pad, device having the same, and device manufacturing method
US6291840B1 (en) * 1996-11-29 2001-09-18 Toyoda Gosei Co., Ltd. GaN related compound semiconductor light-emitting device
US6281524B1 (en) * 1997-02-21 2001-08-28 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
JP3423175B2 (en) * 1997-02-24 2003-07-07 三洋電機株式会社 Light emitting device manufacturing method
JP3342336B2 (en) * 1997-02-25 2002-11-05 三洋電機株式会社 Semiconductor light emitting device
KR100434242B1 (en) * 1997-03-19 2004-06-04 샤프 가부시키가이샤 Semiconductor light emitting element
DE19820777C2 (en) * 1997-05-08 2003-06-18 Showa Denko Kk Electrode for semiconductor light emitting devices
JP3631359B2 (en) * 1997-11-14 2005-03-23 日亜化学工業株式会社 Nitride semiconductor light emitting device
US6194743B1 (en) * 1997-12-15 2001-02-27 Agilent Technologies, Inc. Nitride semiconductor light emitting device having a silver p-contact
JP4183299B2 (en) * 1998-03-25 2008-11-19 株式会社東芝 Gallium nitride compound semiconductor light emitting device
JP3625377B2 (en) * 1998-05-25 2005-03-02 ローム株式会社 Semiconductor light emitting device
US6468676B1 (en) * 1999-01-02 2002-10-22 Minolta Co., Ltd. Organic electroluminescent display element, finder screen display device, finder and optical device

Also Published As

Publication number Publication date
KR100542165B1 (en) 2006-01-11
KR20020087067A (en) 2002-11-21
EP1271662A4 (en) 2005-04-13
JP2001250985A (en) 2001-09-14
US7095059B2 (en) 2006-08-22
WO2001067524A1 (en) 2001-09-13
US20030025115A1 (en) 2003-02-06
JP4026294B2 (en) 2007-12-26
EP1271662A1 (en) 2003-01-02
TW527736B (en) 2003-04-11

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