AU2002215217A1 - Semiconductor photocathode - Google Patents

Semiconductor photocathode

Info

Publication number: AU2002215217A1
Authority: AU; Australia
Prior art keywords: semiconductor photocathode; photocathode; semiconductor
Prior art date: 2000-11-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU2002215217A

Inventor

Hirofumi Kan

Minoru Niigaki

Masashi Ohta

Yasufumi Takagi

Shoichi Uchiyama

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hamamatsu Photonics KK

Original Assignee

Hamamatsu Photonics KK

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2000-11-15

Filing date

2001-11-15

Publication date

2002-05-27

2001-11-15 Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK

2002-05-27 Publication of AU2002215217A1 publication Critical patent/AU2002215217A1/en

Status Abandoned legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
- H01J31/506—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output tubes using secondary emission effect
- H01J31/507—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output tubes using secondary emission effect using a large number of channels, e.g. microchannel plates
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
- H01J40/02—Details
- H01J40/04—Electrodes
- H01J40/06—Photo-emissive cathodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/08—Cathode arrangements
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2231/00—Cathode ray tubes or electron beam tubes
- H01J2231/50—Imaging and conversion tubes
- H01J2231/50005—Imaging and conversion tubes characterised by form of illumination
- H01J2231/5001—Photons
- H01J2231/50015—Light
- H01J2231/50021—Ultraviolet

AU2002215217A 2000-11-15 2001-11-15 Semiconductor photocathode Abandoned AU2002215217A1 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2000-348376		2000-11-15
JP2000348376A JP2002150928A (en)	2000-11-15	2000-11-15	Semiconductor photocathode
PCT/JP2001/009989 WO2002041349A1 (en)	2000-11-15	2001-11-15	Semiconductor photocathode

Publications (1)

Publication Number	Publication Date
AU2002215217A1 true AU2002215217A1 (en)	2002-05-27

Family

ID=18821974

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU2002215217A Abandoned AU2002215217A1 (en)	2000-11-15	2001-11-15	Semiconductor photocathode

Country Status (4)

Country	Link
US (2)	US6831341B2 (en)
JP (1)	JP2002150928A (en)
AU (1)	AU2002215217A1 (en)
WO (1)	WO2002041349A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4256212B2 (en) *	2003-06-17	2009-04-22	浜松ホトニクス株式会社	Photodetector tube
US6992441B2 (en) *	2003-09-14	2006-01-31	Litton Systems, Inc.	MBE grown alkali antimonide photocathodes
JP2009272102A (en) *	2008-05-02	2009-11-19	Hamamatsu Photonics Kk	Photocathode and electron tube having the same
WO2010017136A1 (en) *	2008-08-04	2010-02-11	Amir Dassoud Dabiran	Microchannel plate photocathode
US8350472B2 (en) *	2010-03-04	2013-01-08	Duly Research Inc.	High voltage switch triggered by a laser-photocathode subsystem
CN102254779B (en) *	2011-05-10	2012-12-26	中国电子科技集团公司第五十五研究所	Cs-activation-free heterojunction type GaN negative electron affinity photoelectric cathode
US9076639B2 (en)	2011-09-07	2015-07-07	Kla-Tencor Corporation	Transmissive-reflective photocathode
EP2642503B1 (en) *	2012-03-23	2022-09-28	Sanken Electric Co., Ltd.	Semiconductor photocathode and method for manufacturing the same
JP6079515B2 (en) *	2013-09-09	2017-02-15	富士通株式会社	Secondary ion mass spectrometer
US10062554B2 (en) *	2016-11-28	2018-08-28	The United States Of America, As Represented By The Secretary Of The Navy	Metamaterial photocathode for detection and imaging of infrared radiation
CN110657888B (en) *	2019-10-15	2021-06-29	北方夜视技术股份有限公司	Device and method for measuring out-of-band spectral sensitivity of solar blind ultraviolet image intensifier
US20240055545A1 (en) *	2022-08-09	2024-02-15	Sri International	Enhanced dual-band night vision system

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3986065A (en) *	1974-10-24	1976-10-12	Rca Corporation	Insulating nitride compounds as electron emitters
US4616248A (en)	1985-05-20	1986-10-07	Honeywell Inc.	UV photocathode using negative electron affinity effect in Alx Ga1 N
US5557167A (en)	1994-07-28	1996-09-17	Litton Systems, Inc.	Transmission mode photocathode sensitive to ultravoilet light
JPH0896705A (en)	1994-09-27	1996-04-12	Hamamatsu Photonics Kk	Semiconductor photoelectric cathode and photoelectric tube
JP3433538B2 (en)	1994-11-28	2003-08-04	浜松ホトニクス株式会社	Semiconductor photocathode and semiconductor photocathode device using the same
US5680008A (en) *	1995-04-05	1997-10-21	Advanced Technology Materials, Inc.	Compact low-noise dynodes incorporating semiconductor secondary electron emitting materials
US5684360A (en) *	1995-07-10	1997-11-04	Intevac, Inc.	Electron sources utilizing negative electron affinity photocathodes with ultra-small emission areas
JP3878747B2 (en)	1998-07-10	2007-02-07	浜松ホトニクス株式会社	Semiconductor photocathode

2000
- 2000-11-15 JP JP2000348376A patent/JP2002150928A/en active Pending
2001
- 2001-11-15 AU AU2002215217A patent/AU2002215217A1/en not_active Abandoned
- 2001-11-15 WO PCT/JP2001/009989 patent/WO2002041349A1/en not_active Ceased
- 2001-11-15 US US10/416,703 patent/US6831341B2/en not_active Expired - Fee Related
2004
- 2004-10-12 US US10/961,142 patent/US20050045866A1/en not_active Abandoned

Also Published As

Publication number	Publication date
JP2002150928A (en)	2002-05-24
US20050045866A1 (en)	2005-03-03
US6831341B2 (en)	2004-12-14
WO2002041349A1 (en)	2002-05-23
US20040021417A1 (en)	2004-02-05

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