|
US6177688B1
(en)
*
|
1998-11-24 |
2001-01-23 |
North Carolina State University |
Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
|
|
JP3882539B2
(en)
*
|
2000-07-18 |
2007-02-21 |
ソニー株式会社 |
Semiconductor light emitting device, method for manufacturing the same, and image display device
|
|
JP4724924B2
(en)
*
|
2001-02-08 |
2011-07-13 |
ソニー株式会社 |
Manufacturing method of display device
|
|
US6963086B2
(en)
*
|
2001-10-10 |
2005-11-08 |
Sony Corporation |
Semiconductor light-emitting device image display illuminator and its manufacturing method
|
|
JP4055405B2
(en)
*
|
2001-12-03 |
2008-03-05 |
ソニー株式会社 |
Electronic component and manufacturing method thereof
|
|
JP3912117B2
(en)
*
|
2002-01-17 |
2007-05-09 |
ソニー株式会社 |
Crystal growth method, semiconductor light emitting device and method for manufacturing the same
|
|
JP2003218395A
(en)
*
|
2002-01-18 |
2003-07-31 |
Sony Corp |
Semiconductor light emitting element, semiconductor laser element and light emitting device using the same
|
|
FR2842832B1
(en)
*
|
2002-07-24 |
2006-01-20 |
Lumilog |
METHOD FOR REALIZING VAPOR EPITAXY OF A GALLIUM NITRIDE FILM WITH LOW FAULT DENSITY
|
|
CN100358163C
(en)
|
2002-08-01 |
2007-12-26 |
日亚化学工业株式会社 |
Semiconductor light emitting element, manufacturing method thereof, and light emitting device using same
|
|
TWI228323B
(en)
*
|
2002-09-06 |
2005-02-21 |
Sony Corp |
Semiconductor light emitting device and its manufacturing method, integrated semiconductor light emitting device and manufacturing method thereof, image display device and its manufacturing method, illumination device and manufacturing method thereof
|
|
JP2004119964A
(en)
*
|
2002-09-06 |
2004-04-15 |
Sony Corp |
Semiconductor light emitting element manufacturing method, semiconductor light emitting element, integrated semiconductor light emitting device manufacturing method, integrated semiconductor light emitting device, image display device manufacturing method, image display device, lighting device manufacturing method, and lighting device
|
|
US7002182B2
(en)
|
2002-09-06 |
2006-02-21 |
Sony Corporation |
Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit
|
|
CN1317774C
(en)
*
|
2003-02-12 |
2007-05-23 |
财团法人工业技术研究院 |
Light emitting diode assembly and manufacturing method thereof
|
|
JP2004288799A
(en)
*
|
2003-03-20 |
2004-10-14 |
Sony Corp |
Semiconductor light emitting element and its manufacturing method, integrated semiconductor light emitting device and its manufacturing method, image display device and its manufacturing method, and lighting device and its manufacturing method
|
|
US6986693B2
(en)
*
|
2003-03-26 |
2006-01-17 |
Lucent Technologies Inc. |
Group III-nitride layers with patterned surfaces
|
|
US6818061B2
(en)
*
|
2003-04-10 |
2004-11-16 |
Honeywell International, Inc. |
Method for growing single crystal GaN on silicon
|
|
EP1620902B1
(en)
*
|
2003-05-02 |
2010-07-14 |
University College Cork-National University of Ireland, Cork |
Light emitting mesa structures with high aspect ratio and near-parabolic sidewalls and the manufacture thereof
|
|
KR20110042249A
(en)
|
2003-06-04 |
2011-04-25 |
유명철 |
Method of fabricating vertical structure compound semiconductor devices
|
|
JP4766845B2
(en)
*
|
2003-07-25 |
2011-09-07 |
シャープ株式会社 |
Nitride-based compound semiconductor light-emitting device and method for manufacturing the same
|
|
DE10335080A1
(en)
*
|
2003-07-31 |
2005-03-03 |
Osram Opto Semiconductors Gmbh |
Method for producing a multiplicity of optoelectronic semiconductor chips and optoelectronic semiconductor chip
|
|
DE10335081A1
(en)
*
|
2003-07-31 |
2005-03-03 |
Osram Opto Semiconductors Gmbh |
Method for producing a multiplicity of optoelectronic semiconductor chips and optoelectronic semiconductor chip
|
|
US6863082B1
(en)
*
|
2003-08-13 |
2005-03-08 |
Eaton Corporation |
Mounting a fuel vapor management valve internally to a gas tank
|
|
EP1658642B1
(en)
|
2003-08-28 |
2014-02-26 |
Panasonic Corporation |
Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
|
|
US7064356B2
(en)
|
2004-04-16 |
2006-06-20 |
Gelcore, Llc |
Flip chip light emitting diode with micromesas and a conductive mesh
|
|
TWI385816B
(en)
*
|
2004-04-28 |
2013-02-11 |
維帝克股份有限公司 |
Vertical structure semiconductor device
|
|
TWI433343B
(en)
*
|
2004-06-22 |
2014-04-01 |
維帝克股份有限公司 |
Vertical structure semiconductor device with improved light output
|
|
US20050287698A1
(en)
*
|
2004-06-28 |
2005-12-29 |
Zhiyong Li |
Use of chalcogen plasma to form chalcogenide switching materials for nanoscale electronic devices
|
|
CN100440447C
(en)
*
|
2004-09-15 |
2008-12-03 |
泰勒工程有限公司 |
Method of making inclined-planes used in semiconductor preparing process
|
|
GB2418532A
(en)
*
|
2004-09-28 |
2006-03-29 |
Arima Optoelectronic |
Textured light emitting diode structure with enhanced fill factor
|
|
TWI389334B
(en)
|
2004-11-15 |
2013-03-11 |
維帝克股份有限公司 |
Method of manufacturing and separating semiconductor devices
|
|
KR100728533B1
(en)
*
|
2004-11-23 |
2007-06-15 |
삼성코닝 주식회사 |
Gallium nitride single crystal thick film and method for manufacturing same
|
|
JP4854275B2
(en)
*
|
2004-12-08 |
2012-01-18 |
シャープ株式会社 |
Nitride semiconductor light emitting device and manufacturing method thereof
|
|
WO2006099211A2
(en)
*
|
2005-03-11 |
2006-09-21 |
Ponce Fernando A |
Solid state light emitting device
|
|
EP2410582B1
(en)
*
|
2005-05-24 |
2019-09-04 |
LG Electronics Inc. |
Nano rod type light emitting diode and method for fabricating a nano rod type light emitting diode
|
|
US8718437B2
(en)
|
2006-03-07 |
2014-05-06 |
Qd Vision, Inc. |
Compositions, optical component, system including an optical component, devices, and other products
|
|
WO2007103310A2
(en)
|
2006-03-07 |
2007-09-13 |
Qd Vision, Inc. |
An article including semiconductor nanocrystals
|
|
KR100661716B1
(en)
*
|
2005-06-16 |
2006-12-26 |
엘지전자 주식회사 |
A substrate for light emitting device growth, a light emitting device having a light emitting layer having a three-dimensional structure grown on the substrate, and a manufacturing method thereof
|
|
CA2599881C
(en)
*
|
2005-07-06 |
2014-03-11 |
Lg Innotek Co., Ltd. |
Nitride semiconductor led and fabrication method thereof
|
|
KR100682877B1
(en)
*
|
2005-07-12 |
2007-02-15 |
삼성전기주식회사 |
Light emitting diode and manufacturing method
|
|
JP2007027431A
(en)
*
|
2005-07-15 |
2007-02-01 |
Toshiba Corp |
Light emitting device
|
|
US7795050B2
(en)
*
|
2005-08-12 |
2010-09-14 |
Samsung Electronics Co., Ltd. |
Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same
|
|
KR100753152B1
(en)
*
|
2005-08-12 |
2007-08-30 |
삼성전자주식회사 |
Nitride-based light emitting device and its manufacturing method
|
|
JP2007056164A
(en)
*
|
2005-08-25 |
2007-03-08 |
Univ Nagoya |
Luminescent layer forming substrate, illuminant and luminescent material
|
|
CN100375303C
(en)
*
|
2005-10-27 |
2008-03-12 |
晶能光电(江西)有限公司 |
Ohmic electrode containing gold germanium and nickel, indium gallium aluminum nitrogen semiconductor light-emitting element and manufacturing method
|
|
KR100714626B1
(en)
|
2005-10-11 |
2007-05-07 |
삼성전기주식회사 |
Nitride based semiconductor light emitting devices and manufacturing methods
|
|
KR100716646B1
(en)
*
|
2005-11-04 |
2007-05-09 |
서울옵토디바이스주식회사 |
Light emitting device having an inclined light emitting surface and method of manufacturing same
|
|
US7829909B2
(en)
*
|
2005-11-15 |
2010-11-09 |
Verticle, Inc. |
Light emitting diodes and fabrication methods thereof
|
|
PL1798781T3
(en)
*
|
2005-12-15 |
2010-03-31 |
Lg Electronics Inc |
LED diode having a vertical structure and a method of its production
|
|
KR100649769B1
(en)
*
|
2005-12-28 |
2006-11-27 |
삼성전기주식회사 |
Semiconductor Light Emitting Diode and Manufacturing Method Thereof
|
|
JP4978009B2
(en)
*
|
2006-01-16 |
2012-07-18 |
ソニー株式会社 |
GaN-based semiconductor light-emitting device and manufacturing method thereof
|
|
KR101416838B1
(en)
|
2006-02-10 |
2014-07-08 |
더 리전츠 오브 더 유니버시티 오브 캘리포니아 |
(Al, In, Ga, B) Method for controlling conductivity of N
|
|
US9874674B2
(en)
|
2006-03-07 |
2018-01-23 |
Samsung Electronics Co., Ltd. |
Compositions, optical component, system including an optical component, devices, and other products
|
|
KR100809209B1
(en)
*
|
2006-04-25 |
2008-02-29 |
삼성전기주식회사 |
Non-polar m-nitride semiconductor manufacturing method
|
|
JP4797793B2
(en)
*
|
2006-05-23 |
2011-10-19 |
三菱化学株式会社 |
Method for manufacturing nitride semiconductor crystal
|
|
USD566303S1
(en)
*
|
2006-06-20 |
2008-04-08 |
Matsushita Electric Industrial Co., Ltd. |
Lighting apparatus
|
|
KR100755598B1
(en)
*
|
2006-06-30 |
2007-09-06 |
삼성전기주식회사 |
Nitride Semiconductor Light Emitting Array
|
|
US7952109B2
(en)
*
|
2006-07-10 |
2011-05-31 |
Alcatel-Lucent Usa Inc. |
Light-emitting crystal structures
|
|
KR100826389B1
(en)
|
2006-08-09 |
2008-05-02 |
삼성전기주식회사 |
Nitride semiconductor selective growth method, nitride light emitting device and manufacturing method
|
|
US8421119B2
(en)
*
|
2006-09-13 |
2013-04-16 |
Rohm Co., Ltd. |
GaN related compound semiconductor element and process for producing the same and device having the same
|
|
KR100786102B1
(en)
*
|
2006-09-26 |
2007-12-18 |
엘지전자 주식회사 |
Light emitting diode
|
|
JP5271489B2
(en)
*
|
2006-10-02 |
2013-08-21 |
古河機械金属株式会社 |
Group III nitride semiconductor substrate and manufacturing method thereof
|
|
WO2008051503A2
(en)
*
|
2006-10-19 |
2008-05-02 |
Amberwave Systems Corporation |
Light-emitter-based devices with lattice-mismatched semiconductor structures
|
|
US8458262B2
(en)
*
|
2006-12-22 |
2013-06-04 |
At&T Mobility Ii Llc |
Filtering spam messages across a communication network
|
|
US7663148B2
(en)
*
|
2006-12-22 |
2010-02-16 |
Philips Lumileds Lighting Company, Llc |
III-nitride light emitting device with reduced strain light emitting layer
|
|
US8836212B2
(en)
|
2007-01-11 |
2014-09-16 |
Qd Vision, Inc. |
Light emissive printed article printed with quantum dot ink
|
|
WO2008124154A2
(en)
*
|
2007-04-09 |
2008-10-16 |
Amberwave Systems Corporation |
Photovoltaics on silicon
|
|
US20090032799A1
(en)
|
2007-06-12 |
2009-02-05 |
Siphoton, Inc |
Light emitting device
|
|
US7956370B2
(en)
*
|
2007-06-12 |
2011-06-07 |
Siphoton, Inc. |
Silicon based solid state lighting
|
|
WO2009014707A2
(en)
|
2007-07-23 |
2009-01-29 |
Qd Vision, Inc. |
Quantum dot light enhancement substrate and lighting device including same
|
|
US8128249B2
(en)
|
2007-08-28 |
2012-03-06 |
Qd Vision, Inc. |
Apparatus for selectively backlighting a material
|
|
US20090085055A1
(en)
*
|
2007-09-27 |
2009-04-02 |
Hui Peng |
Method for Growing an Epitaxial Layer
|
|
CN101409315B
(en)
*
|
2007-10-08 |
2011-07-20 |
杨文明 |
Upside-down mounting LED chip
|
|
KR100900288B1
(en)
|
2007-10-29 |
2009-05-29 |
엘지전자 주식회사 |
Light emitting element
|
|
CN101952982B
(en)
*
|
2007-12-21 |
2013-05-01 |
未来之光有限责任公司 |
Nitride-based semiconductor light-emitting diode, nitride-based semiconductor laser element, manufacturing method thereof, and method for forming nitride-based semiconductor layer
|
|
KR101425167B1
(en)
*
|
2008-01-07 |
2014-07-31 |
삼성전자주식회사 |
Menufacturing Method of Nitride Semiconductor Light Emitting Device and Nitride Semiconductor Light Emitting Device by the Same
|
|
WO2009110187A1
(en)
*
|
2008-03-05 |
2009-09-11 |
パナソニック株式会社 |
Light-emitting element
|
|
KR101019134B1
(en)
*
|
2008-03-25 |
2011-03-03 |
우리엘에스티 주식회사 |
Light emitting device and manufacturing method thereof
|
|
EP2297762B1
(en)
|
2008-05-06 |
2017-03-15 |
Samsung Electronics Co., Ltd. |
Solid state lighting devices including quantum confined semiconductor nanoparticles
|
|
US9207385B2
(en)
|
2008-05-06 |
2015-12-08 |
Qd Vision, Inc. |
Lighting systems and devices including same
|
|
WO2009137053A1
(en)
|
2008-05-06 |
2009-11-12 |
Qd Vision, Inc. |
Optical components, systems including an optical component, and devices
|
|
US8097081B2
(en)
|
2008-06-05 |
2012-01-17 |
Soraa, Inc. |
High pressure apparatus and method for nitride crystal growth
|
|
US20090301388A1
(en)
*
|
2008-06-05 |
2009-12-10 |
Soraa Inc. |
Capsule for high pressure processing and method of use for supercritical fluids
|
|
US8871024B2
(en)
|
2008-06-05 |
2014-10-28 |
Soraa, Inc. |
High pressure apparatus and method for nitride crystal growth
|
|
US9157167B1
(en)
|
2008-06-05 |
2015-10-13 |
Soraa, Inc. |
High pressure apparatus and method for nitride crystal growth
|
|
US8303710B2
(en)
*
|
2008-06-18 |
2012-11-06 |
Soraa, Inc. |
High pressure apparatus and method for nitride crystal growth
|
|
US20110108800A1
(en)
*
|
2008-06-24 |
2011-05-12 |
Pan Shaoher X |
Silicon based solid state lighting
|
|
US20090320745A1
(en)
*
|
2008-06-25 |
2009-12-31 |
Soraa, Inc. |
Heater device and method for high pressure processing of crystalline materials
|
|
US20100006873A1
(en)
*
|
2008-06-25 |
2010-01-14 |
Soraa, Inc. |
HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN
|
|
US8134169B2
(en)
*
|
2008-07-01 |
2012-03-13 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Patterned substrate for hetero-epitaxial growth of group-III nitride film
|
|
WO2010005914A1
(en)
*
|
2008-07-07 |
2010-01-14 |
Soraa, Inc. |
High quality large area bulk non-polar or semipolar gallium based substrates and methods
|
|
US20110114917A1
(en)
*
|
2008-07-21 |
2011-05-19 |
Pan Shaoher X |
Light emitting device
|
|
US20110180782A1
(en)
*
|
2008-07-25 |
2011-07-28 |
Hewlett-Packard Development Company, L.P. |
Light-Emitting Devices
|
|
US8284810B1
(en)
|
2008-08-04 |
2012-10-09 |
Soraa, Inc. |
Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
|
|
WO2010017148A1
(en)
|
2008-08-04 |
2010-02-11 |
Soraa, Inc. |
White light devices using non-polar or semipolar gallium containing materials and phosphors
|
|
US20100031873A1
(en)
*
|
2008-08-07 |
2010-02-11 |
Soraa, Inc. |
Basket process and apparatus for crystalline gallium-containing nitride
|
|
US8021481B2
(en)
*
|
2008-08-07 |
2011-09-20 |
Soraa, Inc. |
Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
|
|
US8430958B2
(en)
*
|
2008-08-07 |
2013-04-30 |
Soraa, Inc. |
Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
|
|
US8323405B2
(en)
*
|
2008-08-07 |
2012-12-04 |
Soraa, Inc. |
Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer
|
|
US8979999B2
(en)
*
|
2008-08-07 |
2015-03-17 |
Soraa, Inc. |
Process for large-scale ammonothermal manufacturing of gallium nitride boules
|
|
US10036099B2
(en)
|
2008-08-07 |
2018-07-31 |
Slt Technologies, Inc. |
Process for large-scale ammonothermal manufacturing of gallium nitride boules
|
|
US8148801B2
(en)
|
2008-08-25 |
2012-04-03 |
Soraa, Inc. |
Nitride crystal with removable surface layer and methods of manufacture
|
|
US8354679B1
(en)
|
2008-10-02 |
2013-01-15 |
Soraa, Inc. |
Microcavity light emitting diode method of manufacture
|
|
US20100295088A1
(en)
*
|
2008-10-02 |
2010-11-25 |
Soraa, Inc. |
Textured-surface light emitting diode and method of manufacture
|
|
US8455894B1
(en)
|
2008-10-17 |
2013-06-04 |
Soraa, Inc. |
Photonic-crystal light emitting diode and method of manufacture
|
|
US8461071B2
(en)
*
|
2008-12-12 |
2013-06-11 |
Soraa, Inc. |
Polycrystalline group III metal nitride with getter and method of making
|
|
US8878230B2
(en)
|
2010-03-11 |
2014-11-04 |
Soraa, Inc. |
Semi-insulating group III metal nitride and method of manufacture
|
|
USRE47114E1
(en)
|
2008-12-12 |
2018-11-06 |
Slt Technologies, Inc. |
Polycrystalline group III metal nitride with getter and method of making
|
|
US8987156B2
(en)
|
2008-12-12 |
2015-03-24 |
Soraa, Inc. |
Polycrystalline group III metal nitride with getter and method of making
|
|
US9543392B1
(en)
|
2008-12-12 |
2017-01-10 |
Soraa, Inc. |
Transparent group III metal nitride and method of manufacture
|
|
KR20100073757A
(en)
*
|
2008-12-23 |
2010-07-01 |
삼성전자주식회사 |
Light emitting device using micro-rod and method of manufacturing the light emitting device
|
|
US20110100291A1
(en)
*
|
2009-01-29 |
2011-05-05 |
Soraa, Inc. |
Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules
|
|
TWI399869B
(en)
*
|
2009-02-05 |
2013-06-21 |
Huga Optotech Inc |
Light-emitting diode
|
|
KR101461684B1
(en)
*
|
2009-02-24 |
2014-11-20 |
엘지전자 주식회사 |
Nitride semiconductor light emitting device and method for manufacturing the same
|
|
US8299473B1
(en)
|
2009-04-07 |
2012-10-30 |
Soraa, Inc. |
Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
|
|
JP5430217B2
(en)
*
|
2009-05-07 |
2014-02-26 |
キヤノン株式会社 |
Surface emitting laser array
|
|
JP5257231B2
(en)
|
2009-05-13 |
2013-08-07 |
ソニー株式会社 |
Light emitting diode and manufacturing method thereof
|
|
US8306081B1
(en)
|
2009-05-27 |
2012-11-06 |
Soraa, Inc. |
High indium containing InGaN substrates for long wavelength optical devices
|
|
JP2010278274A
(en)
|
2009-05-29 |
2010-12-09 |
Sony Corp |
Light emitting diode and manufacturing method thereof
|
|
US20100308300A1
(en)
*
|
2009-06-08 |
2010-12-09 |
Siphoton, Inc. |
Integrated circuit light emission device, module and fabrication process
|
|
US8435347B2
(en)
|
2009-09-29 |
2013-05-07 |
Soraa, Inc. |
High pressure apparatus with stackable rings
|
|
US20110079766A1
(en)
*
|
2009-10-01 |
2011-04-07 |
Isaac Harshman Wildeson |
Process for fabricating iii-nitride based nanopyramid leds directly on a metalized silicon substrate
|
|
US9175418B2
(en)
|
2009-10-09 |
2015-11-03 |
Soraa, Inc. |
Method for synthesis of high quality large area bulk gallium based crystals
|
|
WO2011046003A1
(en)
*
|
2009-10-14 |
2011-04-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
KR20110041401A
(en)
*
|
2009-10-15 |
2011-04-21 |
샤프 가부시키가이샤 |
Light emitting device and manufacturing method thereof
|
|
JP4912454B2
(en)
*
|
2009-12-07 |
2012-04-11 |
シャープ株式会社 |
Method for manufacturing rod-shaped structure light emitting element, rod-shaped structure light emitting element, backlight, illumination device, and display device
|
|
KR101178468B1
(en)
|
2009-10-19 |
2012-09-06 |
샤프 가부시키가이샤 |
Bar type light emitting device, method of manufacturing the same, backlight, illumination device and display device
|
|
US8872214B2
(en)
|
2009-10-19 |
2014-10-28 |
Sharp Kabushiki Kaisha |
Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device
|
|
JP5066164B2
(en)
*
|
2009-12-07 |
2012-11-07 |
シャープ株式会社 |
Manufacturing method of semiconductor device
|
|
JP5328682B2
(en)
|
2010-01-13 |
2013-10-30 |
日立電線株式会社 |
Method for producing group III nitride crystal and method for producing group III nitride semiconductor substrate
|
|
US8722441B2
(en)
|
2010-01-21 |
2014-05-13 |
Siphoton Inc. |
Manufacturing process for solid state lighting device on a conductive substrate
|
|
US8674383B2
(en)
*
|
2010-01-21 |
2014-03-18 |
Siphoton Inc. |
Solid state lighting device on a conductive substrate
|
|
US8283676B2
(en)
*
|
2010-01-21 |
2012-10-09 |
Siphoton Inc. |
Manufacturing process for solid state lighting device on a conductive substrate
|
|
US8445890B2
(en)
*
|
2010-03-09 |
2013-05-21 |
Micron Technology, Inc. |
Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing
|
|
CN103038901A
(en)
*
|
2010-03-31 |
2013-04-10 |
Cs解决方案有限公司 |
Semiconductor template substrate, light-emitting element using semiconductor template substrate, and manufacturing method thereof
|
|
KR20110131801A
(en)
*
|
2010-05-31 |
2011-12-07 |
삼성전자주식회사 |
How to make light emitting devices and multi-wavelength light
|
|
US9564320B2
(en)
|
2010-06-18 |
2017-02-07 |
Soraa, Inc. |
Large area nitride crystal and method for making it
|
|
CN103594460B
(en)
*
|
2010-09-01 |
2016-10-05 |
无限科技全球公司 |
Printed constituent of diode, diode or the liquid of other two ends integrated circuits or soliquid and preparation method thereof
|
|
US8729559B2
(en)
|
2010-10-13 |
2014-05-20 |
Soraa, Inc. |
Method of making bulk InGaN substrates and devices thereon
|
|
US8884431B2
(en)
|
2011-09-09 |
2014-11-11 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Packaging methods and structures for semiconductor devices
|
|
US8786053B2
(en)
|
2011-01-24 |
2014-07-22 |
Soraa, Inc. |
Gallium-nitride-on-handle substrate materials and devices and method of manufacture
|
|
US8217418B1
(en)
|
2011-02-14 |
2012-07-10 |
Siphoton Inc. |
Semi-polar semiconductor light emission devices
|
|
US8624292B2
(en)
|
2011-02-14 |
2014-01-07 |
Siphoton Inc. |
Non-polar semiconductor light emission devices
|
|
KR101042561B1
(en)
*
|
2011-02-28 |
2011-06-20 |
박건 |
Nitride-based light emitting device excellent in crystallinity and brightness and manufacturing method thereof
|
|
KR101136882B1
(en)
*
|
2011-03-15 |
2012-04-20 |
광주과학기술원 |
Photovoltaic device of based on nitride semiconductor and method of fabricating the same
|
|
WO2012144212A1
(en)
*
|
2011-04-20 |
2012-10-26 |
パナソニック株式会社 |
Laminated semiconductor substrate, semiconductor chip, and method for manufacturing laminated semiconductor substrate
|
|
JP5533791B2
(en)
*
|
2011-06-20 |
2014-06-25 |
豊田合成株式会社 |
Group III nitride semiconductor light emitting device manufacturing method
|
|
US9449941B2
(en)
|
2011-07-07 |
2016-09-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Connecting function chips to a package to form package-on-package
|
|
KR101964890B1
(en)
*
|
2011-07-12 |
2019-04-03 |
삼성전자주식회사 |
Nano-structured light emitting device
|
|
CN102280550B
(en)
*
|
2011-08-16 |
2015-05-20 |
苏州纳方科技发展有限公司 |
LED (Light Emitting Diode) chip with improved light emitting structure and preparation method thereof
|
|
TWI466323B
(en)
*
|
2011-11-07 |
2014-12-21 |
Ind Tech Res Inst |
Light-emitting diode
|
|
US8482104B2
(en)
|
2012-01-09 |
2013-07-09 |
Soraa, Inc. |
Method for growth of indium-containing nitride films
|
|
US10453996B2
(en)
*
|
2012-05-04 |
2019-10-22 |
Stc.Unm |
Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure
|
|
SE537434C2
(en)
*
|
2012-06-26 |
2015-04-28 |
Polar Light Technologies Ab |
Group III nitride structure
|
|
US20140001509A1
(en)
*
|
2012-06-27 |
2014-01-02 |
Epistar Corporation |
Optoelectronic semiconductor device and the manufacturing method thereof
|
|
TW201419569A
(en)
|
2012-09-18 |
2014-05-16 |
Glo Ab |
Photoelectric structure of nanometer cone size and manufacturing method thereof
|
|
DE102012109460B4
(en)
*
|
2012-10-04 |
2024-03-07 |
OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung |
Method for producing a light-emitting diode display and light-emitting diode display
|
|
FR2997558B1
(en)
*
|
2012-10-26 |
2015-12-18 |
Aledia |
OPTOELECTRIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
|
|
US9537044B2
(en)
|
2012-10-26 |
2017-01-03 |
Aledia |
Optoelectric device and method for manufacturing the same
|
|
FR2997557B1
(en)
|
2012-10-26 |
2016-01-01 |
Commissariat Energie Atomique |
NANOFIL ELECTRONIC DEVICE WITH TRANSITION METAL BUFFER LAYER, METHOD OF GROWING AT LEAST ONE NANOWIL, AND DEVICE MANUFACTURING METHOD
|
|
FR2997420B1
(en)
|
2012-10-26 |
2017-02-24 |
Commissariat Energie Atomique |
PROCESS FOR GROWING AT LEAST ONE NANOFIL FROM A TWO-STEP NITRIDE TRANSITION METAL LAYER
|
|
US20140183579A1
(en)
*
|
2013-01-02 |
2014-07-03 |
Japan Science And Technology Agency |
Miscut semipolar optoelectronic device
|
|
JP6176032B2
(en)
*
|
2013-01-30 |
2017-08-09 |
日亜化学工業株式会社 |
Semiconductor light emitting device
|
|
KR101977677B1
(en)
*
|
2013-02-05 |
2019-05-13 |
삼성전자주식회사 |
Semiconductor light emitting device
|
|
JP5328999B2
(en)
*
|
2013-02-22 |
2013-10-30 |
日立電線株式会社 |
Method for manufacturing group III nitride semiconductor substrate
|
|
KR102037863B1
(en)
*
|
2013-03-15 |
2019-10-29 |
삼성전자주식회사 |
Semiconductor light emitting device and illuminating device having thereof
|
|
CN105449053B
(en)
*
|
2014-09-19 |
2018-04-03 |
展晶科技(深圳)有限公司 |
LED crystal particle and its manufacture method
|
|
US10520769B2
(en)
|
2014-10-31 |
2019-12-31 |
eLux, Inc. |
Emissive display with printed light modification structures
|
|
US10236279B2
(en)
|
2014-10-31 |
2019-03-19 |
eLux, Inc. |
Emissive display with light management system
|
|
US9825202B2
(en)
|
2014-10-31 |
2017-11-21 |
eLux, Inc. |
Display with surface mount emissive elements
|
|
US10381335B2
(en)
|
2014-10-31 |
2019-08-13 |
ehux, Inc. |
Hybrid display using inorganic micro light emitting diodes (uLEDs) and organic LEDs (OLEDs)
|
|
US10319878B2
(en)
|
2014-10-31 |
2019-06-11 |
eLux, Inc. |
Stratified quantum dot phosphor structure
|
|
US10418527B2
(en)
|
2014-10-31 |
2019-09-17 |
eLux, Inc. |
System and method for the fluidic assembly of emissive displays
|
|
US10543486B2
(en)
|
2014-10-31 |
2020-01-28 |
eLux Inc. |
Microperturbation assembly system and method
|
|
US10446728B2
(en)
|
2014-10-31 |
2019-10-15 |
eLux, Inc. |
Pick-and remove system and method for emissive display repair
|
|
US10535640B2
(en)
|
2014-10-31 |
2020-01-14 |
eLux Inc. |
System and method for the fluidic assembly of micro-LEDs utilizing negative pressure
|
|
US10381332B2
(en)
|
2014-10-31 |
2019-08-13 |
eLux Inc. |
Fabrication method for emissive display with light management system
|
|
US10242977B2
(en)
|
2014-10-31 |
2019-03-26 |
eLux, Inc. |
Fluid-suspended microcomponent harvest, distribution, and reclamation
|
|
CN104465929B
(en)
*
|
2014-11-07 |
2017-09-12 |
中山大学 |
The III-nitride micro-nano luminescent device and preparation method of embedded active layer
|
|
WO2016099491A1
(en)
*
|
2014-12-17 |
2016-06-23 |
Intel Corporation |
Integrated circuit die having reduced defect group iii-nitride structures and methods associated therewith
|
|
CN104795324A
(en)
*
|
2015-02-06 |
2015-07-22 |
中山大学 |
Method for growth and preparation of III-nitride Schottky barrier diode
|
|
US10069037B2
(en)
*
|
2015-04-20 |
2018-09-04 |
Epistar Corporation |
Light-emitting device and manufacturing method thereof
|
|
US10236413B2
(en)
*
|
2015-04-20 |
2019-03-19 |
Epistar Corporation |
Light-emitting device and manufacturing method thereof
|
|
CN105720157A
(en)
*
|
2016-02-26 |
2016-06-29 |
中国科学院半导体研究所 |
Gallium nitride-based micro-nano cone structure light-emitting diode and preparation method thereof
|
|
KR101733350B1
(en)
*
|
2016-04-26 |
2017-05-24 |
한국과학기술원 |
Quantum Optical Device and its manufacturing method
|
|
CN106099641A
(en)
*
|
2016-07-08 |
2016-11-09 |
燕山大学 |
A kind of preparation method of semiconductor laser
|
|
CN106784226A
(en)
*
|
2017-01-24 |
2017-05-31 |
广东工业大学 |
A kind of III-nitride micro-nano luminescent device of inverted structure and preparation method thereof
|
|
CN107316922B
(en)
*
|
2017-05-24 |
2018-12-25 |
太原理工大学 |
LED epitaxial structure and preparation method thereof based on GaN hexagonal pyramid array
|
|
CN108987423B
(en)
|
2017-06-05 |
2023-09-12 |
三星电子株式会社 |
display device
|
|
KR102395993B1
(en)
*
|
2017-06-05 |
2022-05-11 |
삼성전자주식회사 |
Display apparatus
|
|
JP2019040982A
(en)
*
|
2017-08-24 |
2019-03-14 |
セイコーエプソン株式会社 |
Light-emitting device and manufacturing method thereof, and projector
|
|
KR102136579B1
(en)
*
|
2018-07-27 |
2020-07-22 |
서울대학교산학협력단 |
Display device
|
|
JP7205820B2
(en)
*
|
2018-08-07 |
2023-01-17 |
豊田合成株式会社 |
Semiconductor laser element and its manufacturing method
|
|
KR102620159B1
(en)
|
2018-10-08 |
2024-01-02 |
삼성전자주식회사 |
Semiconductor light emitting device
|
|
CN113287205B
(en)
*
|
2018-10-31 |
2024-10-22 |
加利福尼亚大学董事会 |
Method for obtaining smooth surface by epitaxial lateral overgrowth
|
|
CN109411583B
(en)
*
|
2018-11-01 |
2020-12-04 |
京东方科技集团股份有限公司 |
Light-emitting unit, method for manufacturing the same, and display device
|
|
JP7348520B2
(en)
*
|
2018-12-25 |
2023-09-21 |
日亜化学工業株式会社 |
Light emitting device and display device
|
|
CN111463330B
(en)
*
|
2019-01-18 |
2022-07-29 |
成都辰显光电有限公司 |
Micro light emitting diode chip and manufacturing method and transfer method thereof
|
|
WO2020158254A1
(en)
*
|
2019-01-30 |
2020-08-06 |
パナソニックセミコンダクターソリューションズ株式会社 |
Semiconductor light-emitting element
|
|
CN113574633B
(en)
*
|
2019-03-18 |
2025-07-04 |
六边钻公司 |
Semiconductor template and manufacturing method
|
|
US11637219B2
(en)
*
|
2019-04-12 |
2023-04-25 |
Google Llc |
Monolithic integration of different light emitting structures on a same substrate
|
|
CN109994579B
(en)
*
|
2019-04-30 |
2020-12-25 |
成都辰显光电有限公司 |
Preparation method of micro LED display panel and micro LED display panel
|
|
CN111048635B
(en)
*
|
2019-12-27 |
2021-06-18 |
广东省半导体产业技术研究院 |
Chip preparation method and chip structure to be stripped
|
|
US11705537B2
(en)
|
2020-04-23 |
2023-07-18 |
Samsung Electronics Co.,. Ltd. |
Display device and method of manufacturing light emitting device
|
|
US12237439B2
(en)
|
2020-04-23 |
2025-02-25 |
Samsung Electronics Co., Ltd. |
Display device
|
|
KR102867340B1
(en)
*
|
2020-10-30 |
2025-09-30 |
삼성전자주식회사 |
Nitride semiconductor light emitting device and display device using the same
|
|
US12501745B2
(en)
|
2020-11-27 |
2025-12-16 |
Enkris Semiconductor, Inc. |
Semiconductor light-emitting device and manufacturing method thereof
|
|
CN113097350B
(en)
*
|
2021-03-31 |
2022-07-22 |
湘能华磊光电股份有限公司 |
A kind of manufacturing method of LED epitaxial wafer with improved brightness
|
|
JP2022184248A
(en)
*
|
2021-05-31 |
2022-12-13 |
豊田合成株式会社 |
Light-emitting element and method for manufacturing light-emitting element
|
|
JP7770123B2
(en)
*
|
2021-07-08 |
2025-11-14 |
株式会社小糸製作所 |
Semiconductor light emitting device and method for manufacturing the same
|
|
JP7272412B1
(en)
|
2021-12-03 |
2023-05-12 |
信越半導体株式会社 |
Bonded semiconductor wafer manufacturing method
|
|
JP7136374B1
(en)
*
|
2022-01-12 |
2022-09-13 |
信越半導体株式会社 |
WAFER HAVING MICRO LED STRUCTURES, METHOD FOR MANUFACTURING WAFER HAVING MICRO LED STRUCTURES, AND METHOD FOR MANUFACTURING BONDED SEMICONDUCTOR WAFER HAVING MICRO LED STRUCTURES
|
|
WO2024180704A1
(en)
*
|
2023-03-01 |
2024-09-06 |
アルディーテック株式会社 |
Light emitting diode chip, light emitting diode chip integrated device, optical data communication device, light emitting device and xr glasses
|