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WO2008117494A1 - 記憶素子及び記憶装置 - Google Patents

記憶素子及び記憶装置 Download PDF

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Publication number
WO2008117494A1
WO2008117494A1 PCT/JP2007/073242 JP2007073242W WO2008117494A1 WO 2008117494 A1 WO2008117494 A1 WO 2008117494A1 JP 2007073242 W JP2007073242 W JP 2007073242W WO 2008117494 A1 WO2008117494 A1 WO 2008117494A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrodes
elements
current suppression
storage
application
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/073242
Other languages
English (en)
French (fr)
Inventor
Koji Arita
Takeshi Takagi
Takumi Mikawa
Yoshio Kawashima
Zhiqiang Wei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to EP07832907A priority Critical patent/EP2128901A4/en
Priority to US12/532,552 priority patent/US20100061142A1/en
Priority to JP2009506194A priority patent/JP5066565B2/ja
Priority to KR1020097021953A priority patent/KR101151594B1/ko
Priority to CN2007800522993A priority patent/CN101636841B/zh
Publication of WO2008117494A1 publication Critical patent/WO2008117494A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/32—Material having simple binary metal oxide structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/33—Material including silicon
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/34—Material includes an oxide or a nitride
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/76—Array using an access device for each cell which being not a transistor and not a diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)

Abstract

　記憶装置（２１）にマトリクス状に配設された記憶素子（３）が、極性が正又は負の電気パルスの印加によりその電気抵抗値が変化しかつ該変化した後の電気抵抗値を維持する抵抗変化素子（１）と、前記抵抗変化素子に前記電気パルスの印加時に流れる電流を抑制する電流抑制素子（２）とを備え、前記電流抑制素子は、第１の電極と、第２の電極と、前記第１の電極と前記第２の電極との間に配設された電流抑制層とを備え、前記電流抑制層が、ＳｉＮｘ（ｘは正の実数）により構成されている。
PCT/JP2007/073242 2007-03-22 2007-11-30 記憶素子及び記憶装置 Ceased WO2008117494A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP07832907A EP2128901A4 (en) 2007-03-22 2007-11-30 MEMORY ELEMENT AND STORAGE DEVICE
US12/532,552 US20100061142A1 (en) 2007-03-22 2007-11-30 Memory element and memory apparatus
JP2009506194A JP5066565B2 (ja) 2007-03-22 2007-11-30 記憶素子及び記憶装置
KR1020097021953A KR101151594B1 (ko) 2007-03-22 2007-11-30 기억 소자 및 기억 장치
CN2007800522993A CN101636841B (zh) 2007-03-22 2007-11-30 存储元件和存储装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-074513 2007-03-22
JP2007074513 2007-03-22

Publications (1)

Publication Number Publication Date
WO2008117494A1 true WO2008117494A1 (ja) 2008-10-02

Family

ID=39788236

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/073242 Ceased WO2008117494A1 (ja) 2007-03-22 2007-11-30 記憶素子及び記憶装置

Country Status (6)

Country Link
US (1) US20100061142A1 (ja)
EP (1) EP2128901A4 (ja)
JP (2) JP5066565B2 (ja)
KR (1) KR101151594B1 (ja)
CN (1) CN101636841B (ja)
WO (1) WO2008117494A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009069690A1 (ja) * 2007-11-29 2009-06-04 Sony Corporation メモリセル
WO2010004675A1 (ja) * 2008-07-11 2010-01-14 パナソニック株式会社 電流抑制素子、記憶素子、及びこれらの製造方法
WO2010032470A1 (ja) * 2008-09-19 2010-03-25 パナソニック株式会社 電流抑制素子、記憶素子、記憶装置および電流抑制素子の製造方法
WO2010058569A1 (ja) * 2008-11-19 2010-05-27 パナソニック株式会社 不揮発性記憶素子および不揮発性記憶装置
JP2011090758A (ja) * 2009-09-25 2011-05-06 Sharp Corp 不揮発性半導体記憶装置
JP4688979B2 (ja) * 2009-07-13 2011-05-25 パナソニック株式会社 抵抗変化型素子および抵抗変化型記憶装置
JP2013118035A (ja) * 2011-12-05 2013-06-13 Toshiba Corp 半導体記憶装置
US8675387B2 (en) 2009-07-28 2014-03-18 Panasonic Corporation Variable resistance nonvolatile memory device and programming method for same

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WO2011114666A1 (ja) * 2010-03-18 2011-09-22 パナソニック株式会社 電流制御素子、記憶素子、記憶装置および電流制御素子の製造方法
US8766231B2 (en) 2011-03-07 2014-07-01 Hewlett-Packard Development Company, L.P. Nanoscale electronic device with barrier layers
US9196753B2 (en) * 2011-04-19 2015-11-24 Micron Technology, Inc. Select devices including a semiconductive stack having a semiconductive material
US8563366B2 (en) 2012-02-28 2013-10-22 Intermolecular Inc. Memory device having an integrated two-terminal current limiting resistor
US20160043142A1 (en) * 2013-03-21 2016-02-11 Industry-University Cooperation Foundation Hanyang University Two-terminal switching element having bidirectional switching characteristic, resistive memory cross-point array including same, and method for manufacturing two-terminal switching element and cross-point resistive memory array
US8975610B1 (en) 2013-12-23 2015-03-10 Intermolecular, Inc. Silicon based selector element
US8981327B1 (en) 2013-12-23 2015-03-17 Intermolecular, Inc. Carbon-doped silicon based selector element
US9391119B2 (en) * 2014-06-20 2016-07-12 GlobalFoundries, Inc. Non-volatile random access memory devices with shared transistor configuration and methods of forming the same
JP6273184B2 (ja) 2014-09-03 2018-01-31 東芝メモリ株式会社 抵抗変化型記憶装置及びその製造方法
US9735360B2 (en) 2015-12-22 2017-08-15 Arm Ltd. Access devices to correlated electron switch

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JPH03283469A (ja) * 1990-03-30 1991-12-13 Toshiba Corp 液晶表示装置
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JP2004319587A (ja) 2003-04-11 2004-11-11 Sharp Corp メモリセル、メモリ装置及びメモリセル製造方法
JP2006203098A (ja) 2005-01-24 2006-08-03 Sharp Corp 不揮発性半導体記憶装置

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JPH03283469A (ja) * 1990-03-30 1991-12-13 Toshiba Corp 液晶表示装置
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US6753561B1 (en) * 2002-08-02 2004-06-22 Unity Semiconductor Corporation Cross point memory array using multiple thin films
JP2004319587A (ja) 2003-04-11 2004-11-11 Sharp Corp メモリセル、メモリ装置及びメモリセル製造方法
JP2006203098A (ja) 2005-01-24 2006-08-03 Sharp Corp 不揮発性半導体記憶装置

Cited By (18)

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Publication number Priority date Publication date Assignee Title
WO2009069690A1 (ja) * 2007-11-29 2009-06-04 Sony Corporation メモリセル
JP2009135206A (ja) * 2007-11-29 2009-06-18 Sony Corp メモリセル
US8295074B2 (en) 2007-11-29 2012-10-23 Sony Corporation Memory cell
WO2010004675A1 (ja) * 2008-07-11 2010-01-14 パナソニック株式会社 電流抑制素子、記憶素子、及びこれらの製造方法
US8422268B2 (en) 2008-07-11 2013-04-16 Panasonic Corporation Current control element, memory element, and fabrication method thereof
WO2010032470A1 (ja) * 2008-09-19 2010-03-25 パナソニック株式会社 電流抑制素子、記憶素子、記憶装置および電流抑制素子の製造方法
US8355274B2 (en) 2008-09-19 2013-01-15 Panasonic Corporation Current steering element, storage element, storage device, and method for manufacturing current steering element
JPWO2010058569A1 (ja) * 2008-11-19 2012-04-19 パナソニック株式会社 不揮発性記憶素子および不揮発性記憶装置
US8227788B2 (en) 2008-11-19 2012-07-24 Panasonic Corporation Nonvolatile memory element, and nonvolatile memory device
JP4531863B2 (ja) * 2008-11-19 2010-08-25 パナソニック株式会社 不揮発性記憶素子および不揮発性記憶装置
US8399875B1 (en) 2008-11-19 2013-03-19 Panasonic Corporation Nonvolatile memory element, and nonvolatile memory device
WO2010058569A1 (ja) * 2008-11-19 2010-05-27 パナソニック株式会社 不揮発性記憶素子および不揮発性記憶装置
JP4688979B2 (ja) * 2009-07-13 2011-05-25 パナソニック株式会社 抵抗変化型素子および抵抗変化型記憶装置
US8394669B2 (en) 2009-07-13 2013-03-12 Panasonic Corporation Resistance variable element and resistance variable memory device
US8675387B2 (en) 2009-07-28 2014-03-18 Panasonic Corporation Variable resistance nonvolatile memory device and programming method for same
JP2011090758A (ja) * 2009-09-25 2011-05-06 Sharp Corp 不揮発性半導体記憶装置
JP2013118035A (ja) * 2011-12-05 2013-06-13 Toshiba Corp 半導体記憶装置
US8908416B2 (en) 2011-12-05 2014-12-09 Kabushiki Kaisha Toshiba Semiconductor memory device

Also Published As

Publication number Publication date
JP5524296B2 (ja) 2014-06-18
JP5066565B2 (ja) 2012-11-07
EP2128901A4 (en) 2013-01-09
KR20100008781A (ko) 2010-01-26
CN101636841B (zh) 2011-06-22
KR101151594B1 (ko) 2012-05-31
CN101636841A (zh) 2010-01-27
JP2012253377A (ja) 2012-12-20
EP2128901A1 (en) 2009-12-02
US20100061142A1 (en) 2010-03-11
JPWO2008117494A1 (ja) 2010-07-15

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