[go: up one dir, main page]

WO2008136327A1 - 接続端子、接続端子を用いた半導体パッケージ及び半導体パッケージの製造方法 - Google Patents

接続端子、接続端子を用いた半導体パッケージ及び半導体パッケージの製造方法 Download PDF

Info

Publication number
WO2008136327A1
WO2008136327A1 PCT/JP2008/057859 JP2008057859W WO2008136327A1 WO 2008136327 A1 WO2008136327 A1 WO 2008136327A1 JP 2008057859 W JP2008057859 W JP 2008057859W WO 2008136327 A1 WO2008136327 A1 WO 2008136327A1
Authority
WO
WIPO (PCT)
Prior art keywords
plating film
connecting terminal
semiconductor package
palladium
mass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/057859
Other languages
English (en)
French (fr)
Inventor
Yoshinori Ejiri
Shuichi Hatakeyama
Shigeharu Arike
Kiyoshi Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to CN2008800135016A priority Critical patent/CN101668880B/zh
Priority to US12/597,835 priority patent/US8426742B2/en
Priority to KR1020097024655A priority patent/KR101107834B1/ko
Publication of WO2008136327A1 publication Critical patent/WO2008136327A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1651—Two or more layers only obtained by electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/52—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C23C18/1837—Multistep pretreatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/42—Coating with noble metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/54—Contact plating, i.e. electroless electrochemical plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
    • H10W46/00—
    • H10W70/05—
    • H10W70/60—
    • H10W70/65—
    • H10W70/685—
    • H10W74/014—
    • H10W74/117—
    • H10W90/701—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703—Plating
    • H05K2203/072—Electroless plating, e.g. finish plating or initial plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703—Plating
    • H05K2203/073—Displacement plating, substitution plating or immersion plating, e.g. for finish plating
    • H10W46/301—
    • H10W46/503—
    • H10W72/0198—
    • H10W72/07223—
    • H10W72/07236—
    • H10W72/07353—
    • H10W72/251—
    • H10W72/252—
    • H10W72/334—
    • H10W72/352—
    • H10W72/354—
    • H10W72/50—
    • H10W72/5522—
    • H10W72/884—
    • H10W72/931—
    • H10W74/00—
    • H10W74/15—
    • H10W90/724—
    • H10W90/734—
    • H10W90/754—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemically Coating (AREA)
  • Wire Bonding (AREA)

Abstract

　置換金めっき皮膜を有する接続端子の接続信頼性を改善する。 　導体層と、無電解ニッケルめっき皮膜と、純度が９９質量％以上の置換又は無電解パラジウムめっき皮膜である第１のパラジウムめっき皮膜と、純度が９０質量％以上９９質量％未満の無電解パラジウムめっき皮膜である第２のパラジウムめっき皮膜と、置換金めっき皮膜と、を有し、無電解ニッケルめっき皮膜、第１のパラジウムめっき皮膜、第２のパラジウムめっき皮膜及び置換金めっき皮膜が導体層の一方面側においてこの順序に積層され、置換金めっき皮膜が導体層とは反対側の最表層に位置している、接続端子。
PCT/JP2008/057859 2007-04-27 2008-04-23 接続端子、接続端子を用いた半導体パッケージ及び半導体パッケージの製造方法 Ceased WO2008136327A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800135016A CN101668880B (zh) 2007-04-27 2008-04-23 连接端子、使用了连接端子的半导体封装件及半导体封装件的制造方法
US12/597,835 US8426742B2 (en) 2007-04-27 2008-04-23 Connecting terminal, semiconductor package using connecting terminal and method for manufacturing semiconductor package
KR1020097024655A KR101107834B1 (ko) 2007-04-27 2008-04-23 접속 단자, 접속 단자를 이용한 반도체 패키지 및 반도체 패키지의 제조 방법

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-118732 2007-04-27
JP2007118732 2007-04-27
JP2008097381A JP5286893B2 (ja) 2007-04-27 2008-04-03 接続端子、接続端子を用いた半導体パッケージ及び半導体パッケージの製造方法
JP2008-097381 2008-04-03

Publications (1)

Publication Number Publication Date
WO2008136327A1 true WO2008136327A1 (ja) 2008-11-13

Family

ID=40166379

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057859 Ceased WO2008136327A1 (ja) 2007-04-27 2008-04-23 接続端子、接続端子を用いた半導体パッケージ及び半導体パッケージの製造方法

Country Status (6)

Country Link
US (1) US8426742B2 (ja)
JP (1) JP5286893B2 (ja)
KR (1) KR101107834B1 (ja)
CN (1) CN101668880B (ja)
TW (1) TWI340617B (ja)
WO (1) WO2008136327A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2410078A1 (en) * 2010-07-20 2012-01-25 TDK Corporation Coating and electronic component
JP2013127115A (ja) * 2011-11-17 2013-06-27 Tdk Corp 被覆体及び電子部品
CN107517541A (zh) * 2017-07-31 2017-12-26 瑞声精密电子沭阳有限公司 电路板及电路板的制作方法

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5042894B2 (ja) * 2008-03-19 2012-10-03 松田産業株式会社 電子部品およびその製造方法
WO2009136495A1 (ja) * 2008-05-09 2009-11-12 国立大学法人九州工業大学 チップサイズ両面接続パッケージ及びその製造方法
US8132321B2 (en) * 2008-08-13 2012-03-13 Unimicron Technology Corp. Method for making embedded circuit structure
JP5140565B2 (ja) * 2008-11-28 2013-02-06 三洋電機株式会社 素子搭載用基板、半導体モジュール、および携帯機器
JP2010251483A (ja) * 2009-04-14 2010-11-04 Renesas Electronics Corp 半導体装置およびその製造方法
JP4511623B1 (ja) * 2009-05-08 2010-07-28 小島化学薬品株式会社 無電解パラジウムめっき液
TW201041105A (en) * 2009-05-13 2010-11-16 Advanced Semiconductor Eng Substrate having single patterned metal layer, and package applied with the same, and methods of manufacturing the substrate and package
DE102009038674B4 (de) * 2009-08-24 2012-02-09 Epcos Ag Trägervorrichtung, Anordnung mit einer solchen Trägervorrichtung sowie Verfahren zur Herstellung eines mindestens eine keramische Schicht umfassenden struktururierten Schichtstapels
TWI470757B (zh) * 2009-10-22 2015-01-21 Unimicron Technology Corp 封裝基板及其製法
CN102143654A (zh) * 2010-01-29 2011-08-03 旭硝子株式会社 元件搭载用基板及其制造方法
JP5843249B2 (ja) * 2010-04-19 2016-01-13 奥野製薬工業株式会社 無電解パラジウムめっき又は無電解パラジウム合金めっきの前処理用活性化液
US8884434B2 (en) * 2010-09-27 2014-11-11 Infineon Technologies Ag Method and system for improving reliability of a semiconductor device
EP2469992B1 (en) 2010-12-23 2015-02-11 Atotech Deutschland GmbH Method for obtaining a palladium surface finish for copper wire bonding on printed circuit boards and IC-substrates
CN102605359A (zh) * 2011-01-25 2012-07-25 台湾上村股份有限公司 化学钯金镀膜结构及其制作方法、铜线或钯铜线接合的钯金镀膜封装结构及其封装工艺
KR20130007022A (ko) * 2011-06-28 2013-01-18 삼성전기주식회사 인쇄회로기판 및 이의 제조방법
KR101310256B1 (ko) 2011-06-28 2013-09-23 삼성전기주식회사 인쇄회로기판의 무전해 표면처리 도금층 및 이의 제조방법
US20130048355A1 (en) * 2011-08-30 2013-02-28 Ibiden Co., Ltd. Printed wiring board
US8780576B2 (en) 2011-09-14 2014-07-15 Invensas Corporation Low CTE interposer
JP5086485B1 (ja) * 2011-09-20 2012-11-28 Ｊｘ日鉱日石金属株式会社 電子部品用金属材料及びその製造方法
JP5284526B1 (ja) * 2011-10-04 2013-09-11 Ｊｘ日鉱日石金属株式会社 電子部品用金属材料及びその製造方法
KR101301795B1 (ko) * 2011-10-04 2013-08-29 앰코 테크놀로지 코리아 주식회사 반도체 패키지
TWI479048B (zh) * 2011-10-24 2015-04-01 Kojima Chemicals Co Ltd 無電解鈀敷液
JP5983336B2 (ja) * 2011-11-17 2016-08-31 Tdk株式会社 被覆体及び電子部品
TWI493798B (zh) 2012-02-03 2015-07-21 Jx Nippon Mining & Metals Corp Push-in terminals and electronic parts for their use
CN103249243A (zh) * 2012-02-03 2013-08-14 景硕科技股份有限公司 线路积层板的线路结构
TWI576330B (zh) * 2012-02-23 2017-04-01 財團法人工業技術研究院 提供防護性與導熱性塗層之方法
JP6029435B2 (ja) 2012-06-27 2016-11-24 Ｊｘ金属株式会社 電子部品用金属材料及びその製造方法、それを用いたコネクタ端子、コネクタ及び電子部品
JP6050664B2 (ja) 2012-06-27 2016-12-21 Ｊｘ金属株式会社 電子部品用金属材料及びその製造方法、それを用いたコネクタ端子、コネクタ及び電子部品
JP2014027020A (ja) * 2012-07-24 2014-02-06 Toshiba Corp 回路基板、電子機器、および回路基板の製造方法
KR20140043955A (ko) 2012-09-21 2014-04-14 삼성전기주식회사 전극 패드, 이를 이용한 인쇄 회로 기판 및 그의 제조 방법
US20140151095A1 (en) * 2012-12-05 2014-06-05 Samsung Electro-Mechanics Co., Ltd. Printed circuit board and method for manufacturing the same
JP2014146652A (ja) * 2013-01-28 2014-08-14 Toppan Printing Co Ltd 配線基板およびその製造方法
US9275925B2 (en) 2013-03-12 2016-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for an improved interconnect structure
KR20150002492A (ko) * 2013-06-28 2015-01-07 쿄세라 서킷 솔루션즈 가부시키가이샤 배선 기판
JP6266907B2 (ja) * 2013-07-03 2018-01-24 新光電気工業株式会社 配線基板及び配線基板の製造方法
JP6308007B2 (ja) * 2013-07-16 2018-04-11 ソニー株式会社 配線基板および配線基板の製造方法
US9425149B1 (en) * 2013-11-22 2016-08-23 Altera Corporation Integrated circuit package routing with reduced crosstalk
JP2015213124A (ja) * 2014-05-02 2015-11-26 イビデン株式会社 パッケージ基板
US10325876B2 (en) * 2014-06-25 2019-06-18 Nxp Usa, Inc. Surface finish for wirebonding
TWI572268B (zh) * 2014-10-13 2017-02-21 欣興電子股份有限公司 中介板及其製造方法
TWI542729B (zh) 2015-07-09 2016-07-21 旭德科技股份有限公司 線路板及其製作方法
US9603258B2 (en) * 2015-08-05 2017-03-21 Uyemura International Corporation Composition and method for electroless plating of palladium phosphorus on copper, and a coated component therefrom
US9633924B1 (en) * 2015-12-16 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and method for forming the same
KR20180113995A (ko) * 2016-01-08 2018-10-17 릴로트리, 엘.엘.씨. 인쇄 회로 표면 마감, 사용 방법, 및 이로부터 제작된 조립체
DE102016216308B4 (de) * 2016-08-30 2022-06-15 Schweizer Electronic Ag Leiterplatte und Verfahren zu deren Herstellung
EP3419052A4 (en) * 2017-01-03 2019-09-18 Shenzhen Goodix Technology Co., Ltd. SUBSTRATE STRUCTURE FOR PACKING SCHIP
US10181447B2 (en) 2017-04-21 2019-01-15 Invensas Corporation 3D-interconnect
JP7365759B2 (ja) * 2018-02-27 2023-10-20 Tdk株式会社 回路モジュール
KR101996915B1 (ko) 2018-09-20 2019-07-05 (주)엠케이켐앤텍 카보닐 산소를 갖는 퓨린 또는 피리미딘계 화합물을 함유하는 치환형 무전해 금 도금액 및 이를 이용한 치환형 무전해 금 도금 방법
JP7189846B2 (ja) * 2019-07-16 2022-12-14 株式会社東芝 半導体装置の製造方法および金属の積層方法
CN110849918B (zh) * 2019-10-31 2021-11-09 北京时代民芯科技有限公司 一种倒装焊器件焊点缺陷无损检测方法和系统
IT201900022632A1 (it) * 2019-12-02 2021-06-02 St Microelectronics Srl Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente
CN111744549A (zh) * 2020-07-25 2020-10-09 合肥学院 一种玻璃纤维布负载W/BiVO4光催化剂的制备方法及应用
CN115235331A (zh) * 2020-12-31 2022-10-25 厦门市诺盛测控技术有限公司 一种焊点镀膜的应变计制备模版
JP7693400B2 (ja) * 2021-06-02 2025-06-17 上村工業株式会社 多層めっき皮膜
US12040284B2 (en) 2021-11-12 2024-07-16 Invensas Llc 3D-interconnect with electromagnetic interference (“EMI”) shield and/or antenna
JP2023081520A (ja) * 2021-12-01 2023-06-13 株式会社ジャパンディスプレイ 電子部品の接続方法及び表示装置の製造方法
TWI824612B (zh) * 2022-07-11 2023-12-01 台灣上村股份有限公司 金鈀金鍍膜結構及其製作方法
CN117528951A (zh) * 2022-07-29 2024-02-06 群创光电股份有限公司 电子装置的制造方法
US20250142730A1 (en) * 2023-10-30 2025-05-01 Tong Hsing Electronic Industries, Ltd. Power component submount and manufacturing method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098438A (ja) * 1995-06-20 1997-01-10 Hitachi Chem Co Ltd ワイヤボンディング用端子とその製造方法並びにそのワイヤボンディング端子を用いた半導体搭載用基板の製造方法
JPH10130856A (ja) * 1996-10-25 1998-05-19 Canon Inc ガラス回路基板
JP2000208555A (ja) * 1995-06-20 2000-07-28 Hitachi Chem Co Ltd ワイヤボンディング用端子とその製造方法並びにそのワイヤボンディング端子を用いた半導体搭載用基板の製造方法
JP2003183840A (ja) * 2001-12-17 2003-07-03 National Institute Of Advanced Industrial & Technology パラジウムまたはパラジウム合金被覆多孔質体の製造方法
JP2006339609A (ja) * 2005-06-06 2006-12-14 Kyocer Slc Technologies Corp 配線基板およびその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05343834A (ja) 1991-07-31 1993-12-24 Matsushita Electric Works Ltd セラミック配線板の製造方法
US5675177A (en) * 1995-06-26 1997-10-07 Lucent Technologies Inc. Ultra-thin noble metal coatings for electronic packaging
JPH10242205A (ja) * 1997-03-03 1998-09-11 Hitachi Chem Co Ltd ワイヤボンディング端子とその形成方法
JP2000277897A (ja) 1999-03-24 2000-10-06 Hitachi Chem Co Ltd はんだボール接続用端子とその形成方法並びに半導体搭載用基板の製造方法
KR100371567B1 (ko) * 2000-12-08 2003-02-07 삼성테크윈 주식회사 Ａｇ 선도금을 이용한 반도체 패키지용 리드프레임
JP3910363B2 (ja) * 2000-12-28 2007-04-25 富士通株式会社 外部接続端子
JP2003297973A (ja) * 2002-03-28 2003-10-17 Hitachi Chem Co Ltd 半導体パッケージ用基板、その製造方法、半導体パッケージおよびその製造方法
US20050001316A1 (en) * 2003-07-01 2005-01-06 Motorola, Inc. Corrosion-resistant bond pad and integrated device
JP4449459B2 (ja) 2004-01-07 2010-04-14 日立化成工業株式会社 ワイヤボンディング用端子とその製造方法及びそのワイヤボンディング用端子を有する半導体搭載用基板。
JP2005317729A (ja) * 2004-04-28 2005-11-10 Hitachi Chem Co Ltd 接続端子、その接続端子を用いた半導体パッケージ及び半導体パッケージの製造方法
US7179738B2 (en) * 2004-06-17 2007-02-20 Texas Instruments Incorporated Semiconductor assembly having substrate with electroplated contact pads
WO2006073206A1 (ja) * 2005-01-05 2006-07-13 Nippon Steel Materials Co., Ltd. 半導体装置用ボンディングワイヤ
JP2006196648A (ja) * 2005-01-13 2006-07-27 Hitachi Metals Ltd 外部接合電極付き電子部品およびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098438A (ja) * 1995-06-20 1997-01-10 Hitachi Chem Co Ltd ワイヤボンディング用端子とその製造方法並びにそのワイヤボンディング端子を用いた半導体搭載用基板の製造方法
JP2000208555A (ja) * 1995-06-20 2000-07-28 Hitachi Chem Co Ltd ワイヤボンディング用端子とその製造方法並びにそのワイヤボンディング端子を用いた半導体搭載用基板の製造方法
JPH10130856A (ja) * 1996-10-25 1998-05-19 Canon Inc ガラス回路基板
JP2003183840A (ja) * 2001-12-17 2003-07-03 National Institute Of Advanced Industrial & Technology パラジウムまたはパラジウム合金被覆多孔質体の製造方法
JP2006339609A (ja) * 2005-06-06 2006-12-14 Kyocer Slc Technologies Corp 配線基板およびその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2410078A1 (en) * 2010-07-20 2012-01-25 TDK Corporation Coating and electronic component
US10392704B2 (en) 2010-07-20 2019-08-27 Tdk Corporation Coating electronic component
JP2013127115A (ja) * 2011-11-17 2013-06-27 Tdk Corp 被覆体及び電子部品
CN107517541A (zh) * 2017-07-31 2017-12-26 瑞声精密电子沭阳有限公司 电路板及电路板的制作方法

Also Published As

Publication number Publication date
CN101668880B (zh) 2011-03-09
TWI340617B (en) 2011-04-11
US20100071940A1 (en) 2010-03-25
CN101668880A (zh) 2010-03-10
JP5286893B2 (ja) 2013-09-11
KR101107834B1 (ko) 2012-02-09
TW200850107A (en) 2008-12-16
JP2008291348A (ja) 2008-12-04
US8426742B2 (en) 2013-04-23
KR20100007920A (ko) 2010-01-22

Similar Documents

Publication Publication Date Title
WO2008136327A1 (ja) 接続端子、接続端子を用いた半導体パッケージ及び半導体パッケージの製造方法
TW200612440A (en) Polymer-matrix conductive film and method for fabricating the same
WO2006110266A3 (en) Method and system for fabricating semiconductor components with through wire interconnects
JP2010153505A5 (ja)
WO2009072544A1 (ja) 電極構造及びその製造方法、回路基板、半導体モジュール
JP2010153498A5 (ja)
WO2008105199A1 (ja) 分波器及びその製造方法
MY152730A (en) Multilayer circuit board, insulating sheet, and semiconductor package using multilayer circuit board
TW200737383A (en) Substrate with built-in chip and method for manufacturing substrate with built-in chip
WO2008129526A3 (en) Electronic interface apparatus and method and system for manufacturing same
WO2008149584A1 (ja) 電子部品装置およびその製造方法
TW200635021A (en) A substrate having high electrical connection reliability of a penetrating via connected to wirings and a method for manufacturing the same
TW201003948A (en) Photovoltaic modules manufactured using monolithic module assembly techniques
WO2009041212A1 (ja) 太陽電池、太陽電池の製造方法、太陽電池モジュールの製造方法および太陽電池モジュール
TW200746330A (en) Microelectronic assembly with back side metallization and method for forming the same
SG170099A1 (en) Integrated circuit package system with warp-free chip
TW200744120A (en) Semiconductor structure, semiconductor wafer and method for fabricating the same
EP2693472A3 (en) Power semiconductor module and its method of manufacturing
TW200705624A (en) Laminated semiconductor package
WO2008117736A1 (ja) インターポーザ基板、それを利用したｌｓｉチップ及び情報端末装置、インターポーザ基板製造方法、並びにｌｓｉチップ製造方法
TW461071B (en) Semiconductor device and method of producing the same
MY147728A (en) Process for manufacturing circuit board
EP1898465A3 (en) Power semiconductor module
TW200713527A (en) Semiconductor package substrate having different thicknesses between wire bonding pad and ball pad and method for fabricating the same
MY146344A (en) Method of manufacturing a semiconductor component with a low cost leadframe using a non-metallic base structure

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880013501.6

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08751989

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12597835

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20097024655

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 08751989

Country of ref document: EP

Kind code of ref document: A1