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WO2008123078A1 - 積層正特性サーミスタ - Google Patents

積層正特性サーミスタ Download PDF

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Publication number
WO2008123078A1
WO2008123078A1 PCT/JP2008/054997 JP2008054997W WO2008123078A1 WO 2008123078 A1 WO2008123078 A1 WO 2008123078A1 JP 2008054997 W JP2008054997 W JP 2008054997W WO 2008123078 A1 WO2008123078 A1 WO 2008123078A1
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WO
WIPO (PCT)
Prior art keywords
layer
layers
agent
semiconductor ceramic
protection layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/054997
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English (en)
French (fr)
Inventor
Kenjiro Mihara
Atsushi Kishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP2009509037A priority Critical patent/JP4936087B2/ja
Priority to CN2008800086202A priority patent/CN101636798B/zh
Priority to DE112008000744.6T priority patent/DE112008000744B4/de
Publication of WO2008123078A1 publication Critical patent/WO2008123078A1/ja
Priority to US12/562,969 priority patent/US7830240B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
    • H01C7/025—Perovskites, e.g. titanates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
    • C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
    • C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/021—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient formed as one or more layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3227—Lanthanum oxide or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
    • C04B2235/602—Making the green bodies or pre-forms by moulding
    • C04B2235/6025—Tape casting, e.g. with a doctor blade
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/652—Reduction treatment
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6582—Hydrogen containing atmosphere
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
    • C04B2235/661—Multi-step sintering
    • C04B2235/662—Annealing after sintering
    • C04B2235/663—Oxidative annealing
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/79—Non-stoichiometric products, e.g. perovskites (ABO3) with an A/B-ratio other than 1
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
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    • C04B2237/345—Refractory metal oxides
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/58—Forming a gradient in composition or in properties across the laminate or the joined articles
    • C04B2237/586—Forming a gradient in composition or in properties across the laminate or the joined articles by joining layers or articles of the same composition but having different densities

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thermistors And Varistors (AREA)

Abstract

　主成分がＢａＴｉＯ３で形成されると共に半導体化剤を含有した半導体セラミック層３ａ～３ｅと、内部電極４ａ～４ｄとが交互に複数積層され、かつ最外層が半導体セラミック層３ａ、３ｅで形成されたセラミック素体１を有している。そして、最外層が保護層５を形成すると共に、内部電極４ａ、４ｄ間に挟まれた複数の前記半導体セラミック層で有効層６を形成する。保護層５は、有効層６に含有される半導体化剤よりも大きなイオン半径を有する半導体化剤を含有し、保護層５の空孔率が有効層６の空孔率よりも低減されている。好ましくは保護層５表面の空孔にガラス膜を形成し、保護層５の空孔率を１０％以下とする。これにより、デラミネーションが生じることもなく、半導体セラミック層へのフラックスの浸入を防止し、所望の抵抗変化率を確保することのできる積層正特性サーミスタを実現する。
PCT/JP2008/054997 2007-03-19 2008-03-18 積層正特性サーミスタ Ceased WO2008123078A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009509037A JP4936087B2 (ja) 2007-03-19 2008-03-18 積層正特性サーミスタ
CN2008800086202A CN101636798B (zh) 2007-03-19 2008-03-18 层叠正温度系数热敏电阻
DE112008000744.6T DE112008000744B4 (de) 2007-03-19 2008-03-18 Mehrschichtiger Thermistor mit positivem Temperaturkoeffizienten
US12/562,969 US7830240B2 (en) 2007-03-19 2009-09-18 Multilayer positive temperature coefficient thermistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-070206 2007-03-19
JP2007070206 2007-03-19

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/562,969 Continuation US7830240B2 (en) 2007-03-19 2009-09-18 Multilayer positive temperature coefficient thermistor

Publications (1)

Publication Number Publication Date
WO2008123078A1 true WO2008123078A1 (ja) 2008-10-16

Family

ID=39830580

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054997 Ceased WO2008123078A1 (ja) 2007-03-19 2008-03-18 積層正特性サーミスタ

Country Status (6)

Country Link
US (1) US7830240B2 (ja)
JP (1) JP4936087B2 (ja)
CN (1) CN101636798B (ja)
DE (1) DE112008000744B4 (ja)
TW (1) TW200903527A (ja)
WO (1) WO2008123078A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009021544A (ja) * 2007-06-12 2009-01-29 Tdk Corp 積層型ｐｔｃサーミスタ及びその製造方法
US7944337B2 (en) 2007-06-12 2011-05-17 Tdk Corporation Stacked PTC thermistor and process for its production
JP2012059786A (ja) * 2010-09-06 2012-03-22 Tdk Corp セラミック積層ｐｔｃサーミスタ
JP2015012052A (ja) * 2013-06-27 2015-01-19 株式会社村田製作所 セラミックサーミスタ

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103889926B (zh) * 2011-11-01 2015-07-01 株式会社村田制作所 Ptc热敏电阻器及ptc热敏电阻器的制造方法
JP6107062B2 (ja) * 2012-11-06 2017-04-05 Tdk株式会社 チップサーミスタ
WO2014077004A1 (ja) 2012-11-15 2014-05-22 株式会社村田製作所 正特性サーミスタおよびその製造方法
CN104529434B (zh) * 2014-12-19 2016-10-05 深圳顺络电子股份有限公司 一种片式陶瓷ptc热敏电阻表面保护层的制备方法
WO2018105333A1 (ja) * 2016-12-08 2018-06-14 株式会社村田製作所 多層セラミック基板及び電子装置
JP6893556B2 (ja) * 2016-12-23 2021-06-23 イフォクレール ヴィヴァデント アクチェンゲゼルシャフトＩｖｏｃｌａｒ Ｖｉｖａｄｅｎｔ ＡＧ 適合した焼結挙動を伴う多層酸化物セラミック体
US10790075B2 (en) 2018-04-17 2020-09-29 Avx Corporation Varistor for high temperature applications

Citations (7)

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JPH01293502A (ja) * 1988-05-20 1989-11-27 Murata Mfg Co Ltd 正特性サーミスタ
JPH0529104A (ja) * 1991-07-19 1993-02-05 Murata Mfg Co Ltd Ｐｔｃサーミスタ
JPH05315106A (ja) * 1992-05-07 1993-11-26 Sekisui Plastics Co Ltd チタン酸バリウム系セラミックス半導体およびその製造方法
JP2000095562A (ja) * 1998-07-24 2000-04-04 Murata Mfg Co Ltd 正特性サ―ミスタ用原料組成物、正特性サ―ミスタ用磁器、および正特性サ―ミスタ用磁器の製造方法
JP2001328862A (ja) * 2000-05-17 2001-11-27 Ube Ind Ltd チタン酸バリウム鉛系半導体磁器組成物
JP2002217004A (ja) * 2001-01-18 2002-08-02 Murata Mfg Co Ltd セラミック電子部品
JP2005093574A (ja) * 2003-09-16 2005-04-07 Murata Mfg Co Ltd 積層型正特性サーミスタおよびその製造方法

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JPH06302403A (ja) 1993-04-16 1994-10-28 Murata Mfg Co Ltd 積層型半導体セラミック素子
JP2000082603A (ja) * 1998-07-08 2000-03-21 Murata Mfg Co Ltd チップ型サ―ミスタおよびその製造方法
JP4108836B2 (ja) * 1998-07-15 2008-06-25 Ｔｄｋ株式会社 誘電体磁器組成物
JP3460683B2 (ja) 2000-07-21 2003-10-27 株式会社村田製作所 チップ型電子部品及びその製造方法
JP4211510B2 (ja) 2002-08-13 2009-01-21 株式会社村田製作所 積層型ｐｔｃサーミスタの製造方法
JP4135651B2 (ja) * 2003-03-26 2008-08-20 株式会社村田製作所 積層型正特性サーミスタ
WO2007034830A1 (ja) 2005-09-20 2007-03-29 Murata Manufacturing Co., Ltd. 積層型正特性サーミスタ
JP4710097B2 (ja) 2005-09-20 2011-06-29 株式会社村田製作所 積層型正特性サーミスタ

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01293502A (ja) * 1988-05-20 1989-11-27 Murata Mfg Co Ltd 正特性サーミスタ
JPH0529104A (ja) * 1991-07-19 1993-02-05 Murata Mfg Co Ltd Ｐｔｃサーミスタ
JPH05315106A (ja) * 1992-05-07 1993-11-26 Sekisui Plastics Co Ltd チタン酸バリウム系セラミックス半導体およびその製造方法
JP2000095562A (ja) * 1998-07-24 2000-04-04 Murata Mfg Co Ltd 正特性サ―ミスタ用原料組成物、正特性サ―ミスタ用磁器、および正特性サ―ミスタ用磁器の製造方法
JP2001328862A (ja) * 2000-05-17 2001-11-27 Ube Ind Ltd チタン酸バリウム鉛系半導体磁器組成物
JP2002217004A (ja) * 2001-01-18 2002-08-02 Murata Mfg Co Ltd セラミック電子部品
JP2005093574A (ja) * 2003-09-16 2005-04-07 Murata Mfg Co Ltd 積層型正特性サーミスタおよびその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009021544A (ja) * 2007-06-12 2009-01-29 Tdk Corp 積層型ｐｔｃサーミスタ及びその製造方法
US7944337B2 (en) 2007-06-12 2011-05-17 Tdk Corporation Stacked PTC thermistor and process for its production
KR101444678B1 (ko) 2007-06-12 2014-09-26 티디케이가부시기가이샤 적층형 ｐｔｃ 서미스터 및 이의 제조방법
JP2012059786A (ja) * 2010-09-06 2012-03-22 Tdk Corp セラミック積層ｐｔｃサーミスタ
US8339237B2 (en) 2010-09-06 2012-12-25 Tdk Corporation Multilayer PTC thermistor
JP2015012052A (ja) * 2013-06-27 2015-01-19 株式会社村田製作所 セラミックサーミスタ

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US7830240B2 (en) 2010-11-09
CN101636798A (zh) 2010-01-27
DE112008000744T5 (de) 2010-02-04
JP4936087B2 (ja) 2012-05-23
TW200903527A (en) 2009-01-16
US20100001828A1 (en) 2010-01-07

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