US20180143444A1 - Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method - Google Patents
Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method Download PDFInfo
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- US20180143444A1 US20180143444A1 US15/856,918 US201715856918A US2018143444A1 US 20180143444 A1 US20180143444 A1 US 20180143444A1 US 201715856918 A US201715856918 A US 201715856918A US 2018143444 A1 US2018143444 A1 US 2018143444A1
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
- F21V13/02—Combinations of only two kinds of elements
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V14/00—Controlling the distribution of the light emitted by adjustment of elements
- F21V14/003—Controlling the distribution of the light emitted by adjustment of elements by interposition of elements with electrically controlled variable light transmissivity, e.g. liquid crystal elements or electrochromic devices
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- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/14—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for producing polarised light
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- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
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- G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
Definitions
- An embodiment of the present invention relates to an optical unit, an illumination optical apparatus, an exposure apparatus, and a device manufacturing method.
- a light beam emitted from a light source travels through a fly's eye lens as an optical integrator to form a secondary light source (a predetermined light intensity distribution on an illumination pupil in general) as a substantial surface illuminant consisting of a large number of light sources.
- the light intensity distribution on the illumination pupil will be referred to hereinafter as “illumination pupil luminance distribution.”
- the illumination pupil is defined as a position such that an illumination target surface becomes a Fourier transform surface of the illumination pupil by action of an optical system between the illumination pupil and the illumination target surface (a mask or a wafer in the case of the exposure apparatus).
- Beams from the secondary light source are condensed by a condenser lens to supposedly illuminate the mask on which a predetermined pattern is formed.
- Light passing through the mask travels through a projection optical system to be focused on the wafer, whereby the mask pattern is projected (or transferred) onto the wafer to effect exposure thereof. Since the pattern formed on the mask is a highly integrated one, an even illuminance distribution must be obtained on the wafer in order to accurately transfer this fine pattern onto the wafer.
- 2002-353105 uses a movable multi-mirror composed of a large number of micro mirror elements which are arranged in an array form and angles and directions of inclination of which are individually drive-controlled, and is so configured that an incident beam is divided into beams of small units corresponding to reflecting surfaces of the mirror elements, the beams of small units are folded by the multi-mirror to convert a cross section of the incident beam into a desired shape or a desired size, and, in turn, a desired illumination pupil luminance distribution is realized.
- An embodiment of the present invention provides an illumination optical apparatus capable of realizing illumination conditions of greater variety in terms of the shape and size of the illumination pupil luminance distribution.
- An embodiment of the present invention provides an exposure apparatus capable of performing good exposure under an appropriate illumination condition realized according to a pattern characteristic, using the illumination optical apparatus capable of realizing the illumination conditions of great variety.
- a light splitter to split an incident beam traveling in an incident light path, into a plurality of beams
- a first spatial light modulator which can be arranged ill an optical path of a first beam out of the plurality of beams
- a second spatial light modulator which can be arranged in an optical path of a second beam out of the plurality of beams
- a light combiner to combine a beam having passed via the first spatial light modulator, with a beam having passed via the second spatial light modulator, and to direct a resultant beam to an exiting light path;
- At least one spatial light modulator out of the first spatial light modulator and the second spatial light modulator has a plurality of optical elements arranged two-dimensionally and controlled individually, and
- incident light path on the light splitter side and the exiting light path on the light combiner side extend in the same direction.
- a second embodiment of the present invention provides an illumination optical apparatus to illuminate an illumination target surface on the basis of light from a light source, the illumination optical apparatus comprising:
- a distribution forming optical system which forms a predetermined light intensity distribution on an illumination pupil of the illumination optical apparatus, based on the beams having passed via the first and second spatial light modulators.
- a third embodiment of the present invention provides an exposure apparatus comprising the illumination optical apparatus of the second aspect for illuminating a predetermined pattern, the exposure apparatus performing exposure of the predetermined pattern on a photosensitive substrate.
- FIG. 1 is a drawing schematically showing a configuration of an exposure apparatus according to an embodiment of the present invention.
- FIG. 2 is a drawing schematically showing a configuration of a spatial light modulation unit.
- FIG. 3 is a perspective view schematically showing a configuration of a cylindrical micro fly's eye lens.
- FIG. 4 is a drawing schematically showing a light intensity distribution of a quadrupolar shape formed on a pupil plane of an afocal lens in the embodiment.
- FIG. 5 is a drawing schematically showing an example of forming an illumination pupil luminance distribution of a pentapolar shape in the embodiment.
- FIG. 6 is a drawing schematically showing a configuration of a spatial light modulation unit according to a modification example in which a light splitter and a light combiner include a common polarization beam splitter.
- FIG. 7 is a drawing schematically showing a configuration of a spatial light modulation unit according to another modification example having transmissive spatial light modulators.
- FIG. 8 is a drawing schematically showing a configuration of an exposure apparatus according to a modification example having a polarization control unit.
- FIG. 9 is a drawing schematically showing a major configuration of a modification example using a diffractive optical element as a light splitter.
- FIG. 10 is a drawing schematically showing a configuration of the spatial light modulation unit shown in FIG. 9 .
- FIG. 11 a partial perspective view of a spatial light modulator in the spatial light modulation unit shown in FIG. 9 .
- FIG. 12 is a drawing schematically showing a major configuration of a modification example using a prism unit as a light splitter.
- FIG. 13 is a flowchart showing manufacturing blocks of semiconductor devices.
- FIG. 14 is a flowchart showing manufacturing blocks of a liquid crystal device such as a liquid-crystal display device.
- FIG. 1 is a drawing schematically showing a configuration of an exposure apparatus according to an embodiment of the present invention.
- FIG. 2 is a drawing schematically showing a configuration of a spatial light modulation unit.
- the Z-axis is set along a direction of a normal to a wafer W being a photosensitive substrate, the Y-axis along a direction parallel to the plane of FIG. 1 in a surface of the wafer W, and the X-axis along a direction perpendicular to the plane of FIG. 1 in the surface of the wafer W.
- the exposure apparatus of the present embodiment is provided with a light source 1 for supplying exposure light (illumination light).
- the light source 1 can be, for example, an ArF excimer laser light source which supplies light at the wavelength of 193 nm, or a KrF excimer laser light source which supplies light at the wavelength of 248 nm.
- Light emitted from the light source 1 is expanded into a beam of a required sectional shape by a shaping optical system 2 and then the expanded beam is incident to a spatial light modulation unit 3 .
- the spatial light modulation unit 3 has a pair of prism members 31 and 32 , and a pair of spatial light modulators 33 and 34 .
- the light incident along the optical axis AX into an entrance face 31 a of the prism member 31 in the spatial light modulation unit 3 propagates inside the prism member 31 and thereafter impinges upon a polarization separating film 35 formed between the prism members 31 and 32 .
- S-polarized light reflected by the polarization separating film propagates inside the prism member 31 and thereafter impinges upon the first spatial light modulator 33 .
- the first spatial light modulator 33 has a plurality of mirror elements (optical elements in general) 33 a arranged two-dimensionally, and a drive unit 33 b (not shown in FIG. 1 ) which individually controls and drives postures of the mirror elements 33 a .
- the second spatial light modulator 34 has a plurality of mirror elements 34 a arranged two-dimensionally, and a drive unit 34 b (not shown in FIG. 1 ) which individually controls and drives postures of the mirror elements 34 a .
- the drive units 33 b , 34 b individually control and drive the postures of the mirror elements 33 a , 34 a in accordance with commands from an unrepresented control unit.
- Light reflected by the mirror elements 33 a of the first spatial light modulator 33 propagates inside the prism member 31 and thereafter is incident in the s-polarized state to a polarization separating film 36 formed between the prism members 31 and 32 .
- the light having traveled via the first spatial light modulator 33 to be reflected on the polarization separating film 36 propagates inside the prism member 31 and is then emitted from an exit face 31 b of the prism member 31 to the outside of the spatial light modulation unit 3 .
- the light having traveled along the optical axis AX into the spatial light modulation unit 3 and then via the first spatial light modulator 33 is emitted along the optical axis AX from the spatial light modulation unit 3 .
- p-polarized light having passed through the polarization separating film 35 propagates inside the prism member 32 and is totally reflected on an interface 32 a between the prism member 32 and a gas (air or inert gas) 37 . Thereafter, the totally reflected light is incident to the second spatial light modulator 34 .
- Light reflected by the mirror elements 34 a in the second spatial light modulator 34 propagates inside the prism member 32 and is totally reflected on an interface 32 b between the prism member 32 and the gas 37 . Thereafter, the totally reflected light is incident in the p-polarized state to the polarization separating film 36 formed between the prism members 31 and 32 .
- the light having traveled along the optical axis AX into the spatial light modulation unit 3 and then via the second spatial light modulator 34 is emitted along the optical axis AX from the spatial light modulation unit 3 .
- the polarization separating film 35 formed between the prism members 31 and 32 constitutes a light splitter to split the incident beam into two beams (a plurality of beams in general).
- the polarization separating film 36 formed between the prism members 31 and 32 constitutes a light combiner to combine the beam having traveled via the first spatial light modulator 33 , with the beam having traveled via the second spatial light modulator 34 .
- the light emitted from the spatial light modulation unit 3 is then incident to an afocal lens 4 .
- the afocal lens 4 is an afocal system (afocal optic) that is so set that the front focal point thereof is approximately coincident with the position of the mirror elements 33 a of the first spatial light modulator 33 and with the position of the mirror elements 34 a of the second spatial light modulator 34 and that the rear focal point thereof is approximately coincident with a position of a predetermined plane 5 indicated by a dashed line in the drawing.
- the s-polarized beam having traveled via the first spatial light modulator 33 forms, for example, a light intensity distribution of a Z-directionally dipolar shape consisting of two circular light intensity distributional areas spaced in the Z-direction with a center on the optical axis AX, on the pupil plane of the afocal lens 4 , and thereafter is emitted in the dipolar angle distribution from the afocal lens 4 .
- the p-polarized beam having traveled via the second spatial light modulator 34 forms, for example, a light intensity distribution of an X-directionally dipolar shape consisting of two circular light intensity distributional areas spaced in the X-direction with a center on the optical axis AX, on the pupil plane of the afocal lens 4 , and thereafter is emitted in the dipolar angle distribution from the afocal lens 4 .
- a conical axicon system 6 is arranged at the position of the pupil plane of the afocal lens 4 or at a position near it in the optical path between a front lens unit 4 a and a rear lens unit 4 b of the afocal lens 4 .
- the configuration and action of the conical axicon system 6 will be described later.
- the cylindrical micro fly's eye lens 8 is composed of a first fly's eye member 8 a arranged on the light source side and a second fly's eye member 8 b arranged on the mask side. Cylindrical lens groups 8 aa and 8 ba arrayed in the X-direction are formed each at the pitch p 1 in the light-source-side surface of the first fly's eye member 8 a and in the light-source-side surface of the second fly's eye member 8 b , respectively.
- Cylindrical lens groups 8 ab and 8 bb arrayed in the Z-direction are formed each at the pitch p 2 (P 2 >p 1 ) in the mask-side surface of the first fly's eye member 8 a and in the mask-side surface of the second fly's eye member 8 b , respectively.
- the wavefront of a parallel beam incident along the optical axis AX is divided at the pitch pi along the X-direction by the cylindrical lens group 8 aa formed on the light source side of the first fly's eye member 8 a , the divided beams are condensed by refracting faces of the cylindrical lens group, the condensed beams are then condensed by refracting faces of the corresponding cylindrical lenses in the cylindrical lens group 8 ba formed on the light source side of the second fly's eye member 8 b , and the condensed beams are converged on the rear focal plane of the cylindrical micro fly's eye lens 8 .
- the wavefront of a parallel beam incident along the optical axis AX is divided at the pitch p 2 along the Z-direction by the cylindrical lens group 8 ab formed on the mask side of the first fly's eye member 8 a , the divided beams are condensed by refracting faces of the cylindrical lens group, the condensed beams are then condensed by refracting faces of the corresponding cylindrical lenses in the cylindrical lens group 8 bb formed on the mask side of the second fly's eye member 8 b , and the condensed beams are converged on the rear focal plane of the cylindrical micro fly's eye lens 8 .
- the cylindrical micro fly's eye lens 8 is composed of the first fly's eye member 8 a and the second fly's eye member 8 b in each of which the cylindrical lens groups are arranged on the two side faces thereof, and exercises the same optical function as a micro fly's eye lens in which a large number of micro refracting faces of a rectangular shape in the size of p 1 in the X-direction and in the size of p 2 in the Z-direction are integrally formed horizontally and vertically and densely.
- the cylindrical micro fly's eye lens 8 is able to achieve smaller change in distortion due to variation in surface shapes of the micro refracting faces and, for example, to keep less influence on the illuminance distribution from manufacture errors of the large number of micro refracting faces integrally formed by etching.
- the position of the predetermined plane 5 is located near the front focal point of the zoom lens 7 and the entrance surface of the cylindrical micro fly's eye lens 8 is located near the rear focal point of the zoom lens 7 .
- the zoom lens 7 sets the predetermined plane 5 and the entrance surface of the cylindrical micro fly's eye lens 8 substantially in the Fourier transform relation and, thus, keeps the pupil plane of the afocal lens 4 approximately optically conjugate with the entrance surface of the cylindrical micro fly's eye lens 8 .
- a quadrupolar illumination field consisting of two circular light intensity distributional areas spaced in the Z-direction with a center on the optical axis AX and two circular light intensity distributional areas spaced in the X-direction with a center on the optical axis AX is formed on the entrance surface of the cylindrical micro fly's eye lens 8 as on the pupil plane of the afocal lens 4 .
- the overall shape of this quadrupolar illumination field similarly varies depending upon the focal length of the zoom lens 7 .
- the rectangular micro refracting faces as wavefront division units in the cylindrical micro fly's eye lens 8 are of a rectangular shape similar to a shape of an illumination field to be formed on the mask M (and, therefore, similar to a shape of an exposure region to be formed on the wafer W).
- the beam incident to the cylindrical micro fly's eye lens 8 is two-dimensionally divided to form a secondary light source with a light intensity distribution approximately identical with the illumination field formed by the incident beam, i.e., a secondary light source of a quadrupolar shape (quadrupolar illumination pupil luminance distribution) consisting of two circular substantial surface illuminants spaced in the Z-direction with a center on the optical axis AX and two circular substantial surface illuminants spaced in the X-direction with a center on the optical axis AX, on or near its rear focal plane (and thus on the illumination pupil).
- Beams from the secondary light source formed on or near the rear focal plane of the cylindrical micro fly's eye lens 8 are then incident to an aperture stop 9 located near it.
- the aperture stop 9 has quadrupolar apertures (light transmitting portions) corresponding to the secondary light source of the quadrupolar shape formed on or near the rear focal plane of the cylindrical micro fly's eye lens 8 .
- the aperture stop 9 is configured so as to be detachable with respect to the illumination optical path and to be switchable with a plurality of aperture stops having apertures of different sizes and shapes.
- a method of switching the aperture stops can be, for example, a known turret method or slide method.
- the aperture stop 9 is arranged at a position approximately optically conjugate with an entrance pupil plane of projection optical system PL described later, and defines a range of the secondary light source that contributes to illumination.
- the beams from the secondary light source limited by the aperture stop 9 travel through a condenser optical system 10 to supposedly illuminate a mask blind 11 .
- an illumination field of a rectangular shape according to the shape and focal length of the rectangular micro refracting faces as wavefront division units of the cylindrical micro fly's eye lens 8 is formed on the mask blind 11 as an illumination field stop.
- Beams having passed through a rectangular aperture (light transmitting portion) of the mask blind 11 is condensed by an imaging optical system 12 to superposedly illuminate a mask M on which a predetermined pattern is formed. Namely, the imaging optical system 12 forms an image of the rectangular aperture of the mask blind 11 on the mask M.
- a beam having passed through the mask M held on a mask stage MS travels through the projection optical system PL to form an image of the mask pattern on a wafer (photosensitive substrate) W held on a wafer stage WS.
- the pattern of the mask M is sequentially transferred into each of exposure regions on the wafer W by performing one-shot exposure or scan exposure while two-dimensionally driving and controlling the wafer stage WS in the plane (XV plane) perpendicular to the optical axis AX of the projection optical system PL and, therefore, while two-dimensionally driving and controlling the wafer W.
- the conical axicon system 6 is composed of the following members arranged in the order named from the light source side: first prism member 6 a with a plane on the light source side and with a refracting surface of a concave conical shape on the mask side; and second prism member 6 b with a plane on the mask side and with a refracting surface of a convex conical shape on the light source side.
- the concave conical refracting surface of the first prism member 6 a and the convex conical refracting surface of the second prism member 6 b are complementarily formed so as to be able to contact each other.
- At least one member out of the first prism member 6 a and the second prism member 6 b is configured to be movable along the optical axis AX, whereby the spacing is made variable between the concave conical refracting surface of the first prism member 6 a and the convex conical refracting surface of the second prism member 6 b .
- the action of the conical axicon system 6 and the action of the zoom lens 7 will be described with focus on the secondary light source of the quadrupolar or annular shape.
- the conical axicon system 6 functions as a plane-parallel plate and causes no effect on the secondary light source of the quadrupolar or annular shape formed.
- the outside diameter (inside diameter) of the quadrupolar or annular secondary light source varies while keeping constant the width of the quadrupolar or annular secondary light source (half of a difference between a diameter (outside diameter) of a circle circumscribed to the quadrupolar secondary light source and a diameter (inside diameter) of a circle inscribed therein; half of a difference between the outside diameter and the inside diameter of the annular secondary light source).
- the annular ratio (inside diameter/outside diameter) and the size (outside diameter) of the quadrupolar or annular secondary light source vary.
- the zoom lens 7 has a function to enlarge or reduce the overall shape of the quadrupolar or annular secondary light source similarly (or isotropically). For example, as the focal length of the zoom lens 7 is increased from a minimum value to a predetermined value, the overall shape of the quadrupolar or annular secondary light source is similarly enlarged. In other words, the width and size (outside diameter) of the secondary light source both vary, without change in the annular ratio of the quadrupolar or annular secondary light source, by the action of the zoom lens 7 . In this manner, the annular ratio and size (outside diameter) of the quadrupolar or annular secondary light source can be controlled by the actions of the conical axicon system 6 and the zoom lens 7 .
- the spatial light modulators 33 , 34 to be used can be, for example, those continuously changing each of orientations of the mirror elements 33 a , 34 a arranged two-dimensionally.
- Such spatial light modulators can be selected, for example, from the spatial light modulators disclosed in Japanese Patent Application Laid-open (Translation of PCT Application) No. 10-503300 and European Patent Application Publication EP 779530 corresponding thereto, Japanese Patent Application Laid-open No. 2004-78136 and U.S. Pat. No. 6,900,915 corresponding thereto, Japanese Patent Application Laid-open (Translation of PCT Application) No. 2006-524349 and U.S. Pat. No. 7,095,546 corresponding thereto, and Japanese Patent Application Laid-open No.
- each of the postures of the mirror elements 33 a varies by the action of the drive unit 33 b operating according to a control signal from the control unit, whereby each mirror element 33 a is set in a predetermined orientation.
- the s-polarized light reflected at respective predetermined angles by the mirror elements 33 a of the first spatial light modulator 33 forms, for example, two circular light intensity distributional areas 41 a and 41 b spaced in the Z-direction with a center on the optical axis AX, on the pupil plane of the afocal lens 4 , as shown in FIG. 4 .
- the light forming the light intensity distributional areas 41 a and 41 b has the polarization direction along the X-direction as indicated by double-headed arrows in the drawing.
- each of the postures of the mirror elements 34 a varies by the action of the drive unit 34 b operating according to a control signal from the control unit, whereby each mirror element 34 a is set in a predetermined orientation.
- the p-polarized light reflected at respective predetermined angles by the mirror elements 34 a of the second spatial light modulator 34 forms, for example, two circular light intensity distributional areas 41 c and 41 d spaced in the X-direction with a center on the optical axis AX, on the pupil plane of the afocal lens 4 , as shown in FIG. 4 .
- the light forming the light intensity distributional areas 41 c and 41 d has the polarization direction along the Z-direction as indicated by double-headed arrows in the drawing.
- the polarization state of the beam incident into the spatial light modulation unit 3 is circular polarization or linear polarization with the polarization direction at an angle of 45° to the X-axis and Z-axis (which will be referred to hereinafter as “45° linear polarization”), the light intensities of the four light intensity distributional areas 41 a - 41 d become equal to each other.
- the light forming the quadrupolar light intensity distribution 41 on the pupil plane of the afocal lens 4 forms the light intensity distribution of the quadrupolar shape corresponding to the light intensity distributional areas 41 a - 41 d on the entrance surface of the cylindrical micro fly's eye lens 8 , and on the rear focal plane of the cylindrical micro fly's eye lens 8 or on the illumination pupil near it (the position where the aperture stop 9 is arranged).
- the afocal lens 4 , zoom lens 7 , and cylindrical micro fly's eye lens 8 constitute a distribution forming optical system which forms a predetermined light intensity distribution on the illumination pupil of the illumination optical apparatus ( 2 - 12 ), based on the beams having traveled via the first spatial light modulator 33 and the second spatial light modulator 34 .
- the light intensity distribution of the quadrupolar shape corresponding to the light intensity distributional areas 41 a - 41 d is also formed at other illumination pupil positions optically conjugate with the aperture stop 9 , i.e., at the pupil position of the imaging optical system 12 and at the pupil position of the projection optical system PL.
- the exposure apparatus performs exposure under an appropriate illumination condition according to a pattern characteristic, in order to highly accurately and faithfully transfer the pattern of the mask M onto the wafer W.
- the illumination pupil luminance distribution to be formed is the quadrupolar illumination pupil luminance distribution corresponding to the quadrupolar light intensity distribution 41 shown in FIG. 4 and the beams passing through this quadrupolar illumination pupil luminance distribution are set in a circumferential polarization state.
- the light impinging upon the wafer W as a final illumination target surface is in a polarization state in which the principal component is s-polarized light.
- the s-polarized light is linearly polarized light with the polarization direction along a direction normal to a plane of incidence (which is polarized light with the electric vector vibrating in the direction normal to the plane of incidence).
- the plane of incidence is defined as a plane that includes a point where light impinges upon a boundary surface of a medium (illumination target surface: surface of wafer W) and that includes a normal to the boundary surface at that point and a direction of incidence of the light.
- the circumferential polarization quadrupolar illumination achieves an improvement in optical performance of the projection optical system (the depth of focus and others), whereby a good mask pattern image is obtained with high contrast on the wafer (photosensitive substrate).
- the present embodiment uses the spatial light modulation unit 3 with the pair of spatial light modulators 33 , 34 in which the postures of the mirror elements 33 a , 34 a each are individually changed, it is feasible to freely and quickly change the illumination pupil luminance distribution consisting of the first light intensity distribution in the s-polarized state formed on the illumination pupil by the action of the first spatial light modulator 33 and the second light intensity distribution in the p-polarized state formed on the illumination pupil by the action of the second spatial light modulator 34 .
- the present embodiment is able to realize the illumination conditions of great variety in terms of the shape, size, and polarization state of the illumination pupil luminance distribution, by changing each of the shapes and sizes of the first light intensity distribution and the second light intensity distribution in mutually different polarization states.
- the illumination optical apparatus ( 2 - 12 ) to illuminate the mask M as an illumination target surface on the basis of the light from the light source 1 in the present embodiment is able to realize the illumination conditions of great variety in terms of the shape, size, and polarization state of the illumination pupil luminance distribution.
- the exposure apparatus ( 1 -WS) of the present embodiment is able to perform good exposure under an appropriate illumination condition realized according to the pattern characteristic of the mask M, using the illumination optical apparatus ( 2 - 12 ) capable of realizing the illumination conditions of great variety.
- the traveling direction of the incident beam to the polarization separating film 35 functioning as a light splitter is parallel to (or coincident with) the traveling direction of the exiting beam from the polarization separating film 36 functioning as a light combiner.
- the traveling directions of the incident beam to the spatial light modulation unit 3 and the exiting beam from the spatial light modulation unit 3 are coincident with (or parallel to) the optical axis AX of the illumination optical apparatus. Since the optical paths upstream and downstream of the spatial light modulation unit 3 are coaxial (or parallel), the optical system can be shared, for example, with the conventional illumination optical apparatus using a diffractive optical element for formation of the illumination pupil luminance distribution.
- the mirror elements 33 a of the first spatial light modulator 33 are arranged near the prism member 31 and the mirror elements 34 a of the second spatial light modulator 34 are arranged near the prism member 32 .
- the prism members 31 , 32 serve as cover members for the mirror elements 33 a , 34 a , which can enhance the durability of the spatial light modulators 33 , 34 .
- the spatial light modulation unit 3 may be so designed that the angle ⁇ of incidence of the light (cf. FIG. 2 ) to the polarization separating film 35 formed between the prism members 31 and 32 is close to the Brewster's angle. This configuration can reduce the reflectance of p-polarized light on the polarization separating film 35 and increase polarization efficiency.
- the polarization separating films 35 , 36 are not limited to those made of dielectric multilayer films, but may be, for example, those having “a polarization separating layer of a periodic grating structure.”
- the “polarization separating layer of the periodic grating structure” of this type can be a wire grid type polarization separating element in which a plurality of metal gratings parallel to a first direction are periodically arranged in a second direction orthogonal to the first direction.
- This technology is disclosed, for example, in Japanese Patent Application Laid-open No. 2005-77819 and U.S. Pat. No. 7,116,478 corresponding thereto.
- the teachings in U.S. Pat. No. 7,116,478 are incorporated herein by reference.
- the spatial light modulation unit 3 is composed of the pair of prism members 31 and 32 and the pair of spatial light modulators 33 and 34 .
- various forms can be contemplated for specific configurations of the spatial light modulation unit 3 .
- the afocal lens 4 , conical axicon system 6 , and zoom lens 7 are arranged in the optical path between the spatial light modulation unit 3 and the cylindrical micro fly's eye lens 8 .
- these optical members can be replaced, for example, by a condensing optical system functioning as a Fourier transform lens.
- the p-polarized light having traveled via the polarization separating film 35 functioning as a light splitter is folded toward the second spatial light modulator 34 by total reflection on the interface 32 a between the prism member 32 and the gas 37 as a first folding surface.
- the p-polarized light having traveled via the second spatial light modulator 34 is folded toward the polarization separating film 36 functioning as a light combiner, by total reflection on the interface 32 b between the prism member 32 and the gas 37 .
- the quadrupolar illumination pupil luminance distribution is formed by forming the Z-directionally dipolar light intensity distributional areas 41 a , 41 b by the action of the first spatial light modulator 33 and forming the X-directionally dipolar light intensity distributional areas 41 c , 41 d by the action of the second spatial light modulator 34 .
- various forms can be contemplated as to the shape, size, and polarization state of the illumination pupil luminance distribution. The following will schematically describe an example of forming a pentapolar illumination pupil luminance distribution, with reference to FIG. 5 .
- two circular light intensity distributional areas 42 a and 42 b spaced in the Z-direction with a center on the optical axis AX and a circular light intensity distributional area 42 c ′ with a center on the optical axis AX are formed on the pupil plane of the afocal lens 4 by the action of the first spatial light modulator 33 .
- the light forming the light intensity distributional areas 42 a , 42 b , 42 c ′ has the polarization direction along the X-direction as indicated by double-headed arrows in the drawing.
- two circular light intensity distributional areas 42 d and 42 e spaced in the X-direction with a center on the optical axis AX and a circular light intensity distributional area 42 c ′′ with a center on the optical axis AX are formed on the pupil plane of the afocal lens 4 by the action of the second spatial light modulator 34 .
- the light forming the light intensity distributional areas 42 d , 42 e , 42 c ′′ has the polarization direction along the Z-direction as indicated by double-headed arrows in the drawing.
- the light intensity distributional areas 42 a - 42 e of the pentapolar shape are formed, as shown in the right view in FIG. 5 , on the pupil plane of the afocal lens 4 .
- the circular light intensity distributional area 42 c with a center on the optical axis AX is formed by superposition of the light intensity distributional areas 42 c ′ and 42 c ′′.
- the beam with the polarization direction along the Z-direction and the beam with the polarization direction along the X-direction as indicated by the double-headed arrows in the drawing pass through the region of the light intensity distributional area 42 c.
- the polarization state of the beam passing through the region of the light intensity distributional area 42 c coincides with the polarization state of the incident beam to the spatial light modulation unit 3 .
- the light intensities of the four surrounding light intensity distributional areas 42 a , 42 b , 42 d , 42 e are equal to each other and the light intensity of the center light intensity distributional area 42 c is twice the light intensities of the other areas.
- light having passed through a half wave plate may be made incident to the polarization separating film 35 functioning as a light splitter.
- a ratio of intensities of the s-polarized light and the p-polarized light separated by the polarization separating film 35 can be controlled by rotating the half wave plate arranged on the light source side with respect to the polarization separating film 35 , around the optical axis. Namely, it is feasible to control the ratio of intensities of s-polarized light and p-polarized light reaching the pupil plane of the afocal lens 4 .
- s-polarized light or p-polarized light reach the pupil plane of the afocal lens 4 , for example, by controlling the angle of rotation of the half wave plate so as to make the s-polarized light incident to the polarization separating film 35 or by controlling the angle of rotation of the half wave plate so as to make the p-polarized light incident to the polarization separating film 35 .
- the polarization separating film 35 located on the light splitting surface functions as a light splitter and the polarization separating film 36 located on the light combining surface at the position different from that of the polarization separating film 35 functions as a light combiner.
- the light splitter and the light combiner have a common polarization beam splitter 51 , for example, as shown in FIG. 6 .
- the s-polarized light reflected on a polarization separating film 51 a in the light incident along the optical axis AX into the polarization beam splitter 51 , travels through a quarter wave plate 52 to become circularly polarized light, and the circularly polarized light is incident to the first spatial light modulator 53 .
- the p-polarized light having traveled via the first spatial light modulator 53 to enter the polarization beam splitter 51 passes through the polarization separating film 51 a to be emitted from the polarization beam splitter 51 .
- the light having traveled along the optical axis AX into the spatial light modulation unit 3 A and then via the first spatial light modulator 53 is emitted along the optical axis AX from the spatial light modulation unit 3 A.
- the p-polarized light passing through the polarization separating film 51 a of the polarization beam splitter 51 travels through a quarter wave plate 54 to become circularly polarized light, and the circularly polarized light is incident to the second spatial light modulator 55 .
- Light reflected by a plurality of mirror elements of the second spatial light modulator 55 travels through the quarter wave plate 54 to become s-polarized light and the s-polarized light returns to the polarization beam splitter 51 .
- the s-polarized light having traveled via the second spatial light modulator 55 and having entered the polarization beam splitter 51 is reflected by the polarization separating film 51 a and the reflected light is emitted from the polarization beam splitter 51 .
- the spatial light modulators with the plurality of optical elements arranged two-dimensionally and controlled individually are those in which the orientations of the reflecting surfaces (angles: inclinations) arranged two-dimensionally can be individually controlled.
- the spatial light modulators of this type applicable herein can be selected, for example, from the spatial light modulators disclosed in Japanese Patent Application Laid-open No. 6-281869 and U.S. Pat. No. 5,312,513 corresponding thereto, and in FIG. 1d in Japanese Patent Application Laid-open (Translation of PCT Application) No.
- spatial light modulators are able to apply the same action as a diffracting surface, to the incident light by forming a two-dimensional height distribution.
- the above-described spatial light modulators with the plurality of reflecting surfaces arranged two-dimensionally may be modified, for example, according to the disclosure in Japanese Patent Application Laid-open (Translation of PCT Application) No. 2006-513442 and U.S. Pat. No. 6,891,655 corresponding thereto, or according to the disclosure in Japanese Patent Application Laid-open (Translation of PCT Application) No. 2005-524112 and U.S. Pat. Published Application No. 2005/0095749 corresponding thereto.
- FIG. 7 schematically shows a configuration of a spatial light modulation unit according to a modification example having transmissive spatial light modulators.
- the light having passed through a plurality of optical elements (prism elements or the like) of the first spatial light modulator 62 is folded by a path folding mirror 63 and thereafter the folded light is incident to a polarization beam splitter 64 functioning as a light combiner.
- the s-polarized light having traveled via the first spatial light modulator 62 and having entered the polarization beam splitter 64 is reflected by a polarization separating film 64 a and the reflected light is emitted from the polarization beam splitter 64 .
- the light having traveled along the optical axis AX into the spatial light modulation unit 3 B and then through the first spatial light modulator 62 is emitted along the optical axis AX from the spatial light modulation unit 3 B.
- the p-polarized light having passed through the polarization separating film 61 a of the polarization beam splitter 61 is incident into a second spatial light modulator 65 .
- the light having passed through a plurality of optical elements of the second spatial light modulator 65 is folded by a path folding mirror 66 and the folded light is incident to the polarization beam splitter 64 .
- the p-polarized light having traveled via the second spatial light modulator 65 and having entered the polarization beam splitter 64 travels through the polarization separating film 64 a and is emitted from the polarization beam splitter 64 .
- the light having traveled along the optical axis AX into the spatial light modulation unit 3 B and then through the second spatial light modulator 65 is emitted along the optical axis AX from the spatial light modulation unit 3 B.
- the optical system is so configured that the light from the light source 1 supplying the light in the polarization state in which linearly polarized light is a principal component, is guided to the spatial light modulation unit ( 3 ; 3 A; 3 B) while substantially maintaining the polarization state of the light, but it is also possible, for example, to adopt a modification example in which a polarization control unit 13 for making the polarization state of exiting light variable is provided in the optical path on the light source 1 side of the spatial light modulation unit 3 , as shown in FIG. 8 .
- FIG. 8 the members with the same functionality as in FIG. 1 are denoted by the same reference symbols.
- the polarization control unit 13 shown in the modification example of FIG. 8 receives the light from the light source 1 having traveled via the shaping optical system 2 and path folding mirror, and emits light in a desired polarization state toward the spatial light modulation unit 3 .
- This polarization control unit 13 is composed, for example, of a half wave plate 13 a arranged as rotatable around the optical axis or around an axis parallel to the optical axis, and a rotational drive unit 13 b which rotationally drives the half wave plate 13 a.
- linearly polarized light with the polarization direction (direction of the electric field) along the 45° direction to the x-axis or the Z-axis in the XZ plane can be supplied to the spatial light modulation unit 3 , by rotationally adjusting the half wave plate 13 a through the rotational drive unit 13 b .
- the light quantity of the s-polarized light (the light traveling toward the first spatial light modulator 33 ) and the light quantity of the p-polarized light (the light traveling toward the second spatial light modulator 34 ) separated by the polarization separating film of the spatial light modulation unit 3 become approximately equal.
- the ratio of the light quantities of the s-polarized light (the light toward the first spatial light modulator 33 ) and the p-polarized light (the light toward the second spatial light modulator 34 ) separated by the polarization separating film of the spatial light modulation unit 3 to any light quantity ratio.
- the ratio of the light quantities of the s-polarized light (the light toward the first spatial light modulator 33 ) and the p-polarized light (the light toward the second spatial light modulator 34 ) separated by the polarization separating film of the spatial light modulation unit 3 to any light quantity ratio.
- the quadrupolar light intensity distributional areas 41 a - 41 d as shown in FIG.
- a ratio of the light intensity of the two light intensity distributional areas 41 a , 41 b spaced in the Z-direction with a center on the optical axis AX and the light intensity of the two light intensity distributional areas 41 c , 41 d spaced in the x-direction with a center on the optical axis AX can be set at a desired light quantity ratio.
- the apparatus may be so arranged that an illumination pupil polarization distribution is measured by a pupil polarization distribution measuring device 14 and that the polarization control unit 13 is controlled according to the result of the measurement.
- each spatial light modulator in the spatial light modulation unit may be controlled as occasion may demand.
- This pupil polarization distribution measuring device 14 is a device that is provided in the wafer stage WS for holding the wafer W or in a measurement stage provided separately from the wafer stage WS, and that measures the polarization state in the pupil (or in the aperture) of the illumination light (exposure light) incident to the wafer W.
- the detailed configuration and action of the polarization state measuring device 14 are disclosed, for example, in Japanese Patent Application Laid-open No. 2005-5521. The teachings in Japanese Patent Application Laid-open No. 2005-5521 are incorporated herein by reference.
- This configuration is effective as follows: for example, even when there is a reflectance difference between polarizations in each path folding mirror arranged in the illumination optical system or in the projection optical system, adverse effect thereby can be prevented.
- the direction of polarization to the spatial light modulation unit 3 is adjusted by the polarization control unit 13 , but the same effect can also be achieved by rotating the light source 1 itself or the spatial light modulation unit 3 around the optical axis.
- This polarization control unit 13 can also be applied to the modification examples shown in FIGS. 6 and 7 .
- the light splitter and the light combiner have the polarization separating film ( 35 , 36 ; 51 a ; 61 a , 64 a ), but, without having to be limited to this, it is also possible to adopt a configuration in which the light splitter and the light combiner have a separating film to effect amplitude division of a beam.
- the first light intensity distribution formed on the illumination pupil by the action of the first spatial light modulator has the same polarization state as the second light intensity distribution formed on the illumination pupil by the action of the second spatial light modulator, but it becomes feasible to realize illumination conditions of great variety in terms of the shape and size of the illumination pupil luminance distribution, by changing each of the shapes and sizes of the first light intensity distribution and the second light intensity distribution.
- FIG. 9 is a drawing schematically showing a major configuration of a modification example using a diffractive optical element as a light splitter.
- the modification example of FIG. 9 has a configuration in which the spatial light modulation unit 3 in the embodiment of FIG. 1 is replaced by a diffractive optical element 71 , a condenser lens 72 , a pair of half wave plates 73 A, 73 B, and a pair of spatial light modulation units 74 A, 74 B.
- the beam from the light source 1 having traveled through the shaping optical system 2 is incident along the optical axis AX to the diffractive optical element 71 as a light splitter.
- the diffractive optical element 71 has such a function that, for example, when a parallel beam with a rectangular cross section is incident along the optical axis AX thereto, it forms two rectangular light intensity distributional areas spaced in the Z-direction with a center on the optical axis AX, in its far field (or Fraunhofer diffraction region). In other words, the diffractive optical element 71 functions to split the incident light into two beams.
- the first beam out of the two beams split by the diffractive optical element 71 travels through the condenser lens 72 functioning as a Fourier transform lens and then enters the half wave plate 73 A rotatable around the optical axis AXa of the optical path of the first beam or around an axis parallel to the optical axis AXa.
- Light in a linearly polarized state having passed through the half wave plate 73 A travels via the spatial light modulation unit 74 A and thereafter travels through the front lens unit 4 a of the afocal lens 4 to reach the pupil plane 4 c of the afocal lens 4 .
- the second beam out of the two beams split by the diffractive optical element 71 travels through the condenser lens 72 and enters the half wave plate 73 B rotatable around the optical axis AXb of the optical path of the second beam or around an axis parallel to the optical axis AXb.
- Light in a linearly polarized state having passed through the half wave plate 73 B travels via the spatial light modulation unit 74 B and thereafter travels through the front lens unit 4 a of the afocal lens 4 to reach the pupil plane 4 c .
- the front lens unit 4 a of the afocal lens 4 is an optical system which superimposes the beam having passed via the spatial light modulator in the spatial light modulation unit 74 A and the beam having passed via the spatial light modulator in the spatial light modulation unit 74 B, on the pupil plane. 4 c , and functions as a light combiner.
- the spatial light modulation unit 74 A arranged in the optical path of the first beam and the spatial light modulation unit 74 B arranged in the optical path of the second beam have the same configuration. It is also assumed that a parallel beam in a linearly polarized state with the polarization direction along a direction at 45° to the Z-direction and the X-direction is incident to the diffractive optical element 71 , that light in an X-directionally linearly polarized state (laterally polarized state) with polarization along the X-direction is incident to the spatial light modulation unit 74 A because of the action of the half wave plate 73 A, and that light in a Z-directionally linearly polarized state (vertically polarized state) with polarization along the Z-direction is incident to the spatial light modulation unit 74 B because of the action of the half wave plate 73 B.
- the specific configuration and action of the spatial light modulation unit 74 A will be described below with reference to FIGS. 10 and 11 . Since the spatial light modulation unit 74 B basically has the same configuration as the spatial light modulation unit 74 A, redundant description is omitted about the specific configuration and action of the spatial light modulation unit 74 B.
- the spatial light modulation unit 74 A as shown in FIG. 10 , has a prism 23 b made of an optical material, e.g., fluorite, and a reflective spatial light modulator 23 a attached in proximity to a side face 23 ba of the prism 23 b parallel to the XY plane.
- the optical material for making the prism 23 b does not have to be limited to fluorite, but may be silica or any other optical material according to the wavelength of the light supplied from the light source 1 .
- the prism 23 b has a form obtained by replacing one side face of a rectangular parallelepiped (a side face opposed to the side face 23 ba to which the spatial light modulator 23 a is attached in proximity) by side faces 23 bb and 23 bc depressed in a V-shape, and is also called a K prism because of the sectional shape along the YZ plane.
- the side faces 23 bb and 23 bc depressed in the V-shape in the prism 23 b are defined by two planes PNI and PN 2 intersecting at an obtuse angle.
- the two planes PNI and PN 2 both are orthogonal to the YZ plane and make the V-shape along the YZ plane.
- Internal surfaces of the two side faces 23 bb and 23 bc in contact along an intersecting line (straight line extending in the X-direction) P 3 between the two planes PNI and PN 2 function as reflecting surfaces R 1 and R 2 .
- the reflecting surface R 1 is located on the plane PN 1
- the reflecting surface R 2 is located on the plane PN 2
- an angle between the reflecting surfaces R 1 and R 2 is an obtuse angle.
- the angles can be determined as follows: the angle between the reflecting surfaces R 1 and R 2 is 120°; the angle between the entrance surface IP of the prism 23 b perpendicular to the optical axis AXa, and the reflecting surface R 1 is 60°; the angle between the exit surface OP of the prism 23 b perpendicular to the optical axis AXa, and the reflecting surface R 2 is 60°.
- the side face 23 ba to which the spatial light modulator 23 a is attached in proximity is parallel to the optical axis AXa; and the reflecting surface R 1 is located on the light source 1 side (on the upstream side of the exposure apparatus; on the left in FIG. 10 ) and the reflecting surface R 2 is located on the afocal lens 4 side (on the downstream side of the exposure apparatus; on the right in FIG. 10 ).
- the reflecting surface R 1 is obliquely arranged with respect to the optical axis AXa and the reflecting surface R 2 is obliquely arranged with respect to the optical axis AXa and in symmetry with the reflecting surface R 1 with respect to a plane passing the intersecting line P 3 and being parallel to the xz plane.
- the side face 23 ba of the prism 3 b is an optical surface opposed to a surface on which the plurality of mirror elements SE of the spatial light modulator 23 a are arranged, as described below.
- the reflecting surface R 1 of the prism 23 b reflects the light incident through the entrance surface IP, toward the spatial light modulator 23 a .
- the spatial light modulator 23 a is located in the optical path between the reflecting surface R 1 and the reflecting surface R 2 and reflects the light incident via the reflecting surface R 1 .
- the reflecting surface R 2 of the prism 23 b reflects the light incident via the spatial light modulator 23 a to guide the reflected light through the exit surface OP to the front lens unit 4 a of the afocal lens 4 .
- the optical paths are expanded so that the optical axis AXa extends linearly on the rear side of the spatial light modulation unit 74 A, for easier understanding of description.
- FIG. 10 shows the example wherein the prism 23 b is integrally made of one optical block, but the prism 23 b may be constructed using a plurality of optical blocks.
- the spatial light modulator 23 a applies spatial modulation according to a position of incidence of light, to the light incident via the reflecting surface R 1 .
- the spatial light modulator 23 a is provided with a plurality of micro mirror elements (optical elements) SE arranged two-dimensionally, as shown in FIG. 11 .
- FIGS. 10 and 11 show a configuration example in which the spatial light modulator 23 a has sixteen mirror elements SE of a 4 ⁇ 4 matrix, but the spatial light modulator actually has a much larger number of mirror elements than sixteen elements.
- a ray L is incident to a mirror element SEa out of the plurality of mirror elements SE, and a ray L 2 is incident to a mirror element SEb different from the mirror element SEa.
- a ray U is incident to a mirror element SEc different from the mirror elements SEa, SEb and a ray LA is incident to a mirror element SEd different from the mirror elements Sea SEc.
- the mirror elements SEa-SEd apply respective spatial modulations set according to their positions, to the rays LI-L 4 , respectively.
- the spatial light modulation unit 23 is so configured that in the standard state in which the reflecting surfaces of all the mirror elements SE of the spatial light modulator 23 a are set in parallel with the XY plane, the rays incident along a direction parallel to the optical axis AXa to the reflecting surface R 1 travel via the spatial light modulator 23 a and thereafter are reflected to a direction parallel to the optical axis AXa by the reflecting surface R 2 .
- the spatial light modulation unit 23 is so configured that an air equivalent length from the entrance surface IP of the prism 23 b via the mirror elements SEa-SEd to the exit surface OP is equal to an air-equivalent length from the position corresponding to the entrance surface IP to the position corresponding to the exit surface OP without the prism 23 b in the optical path.
- An air-equivalent length herein is obtained by converting an optical path length in an optical system into an optical path length in air having the refractive index of 1, and an air-equivalent length in a medium having the refractive index n is obtained by multiplying an optical path length therein by 1/n.
- the surface in which the plurality of mirror elements SE of the spatial light modulator 23 a are arrayed is positioned at or near the rear focal point of the condenser lens 72 and positioned at or near the front focal point of the afocal lens 4 . Therefore, a beam having a cross section of a shape according to the characteristic of the diffractive optical element 71 (e.g., a rectangular shape) is incident to the spatial light modulator 23 a .
- the light reflected by the mirror elements SEaSEd of the spatial light modulator 23 a and provided with a predetermined angle distribution forms predetermined light intensity distributional areas SP I-SP 4 on the pupil plane 4 c of the afocal lens 4 .
- the front lens unit 4 a of the afocal lens 4 converts angles given to the exiting light by the mirror elements SEa-SEd of the spatial light modulator 23 a , into positions on the plane 4 c being a far field region (Fraunhofer diffraction region) of the spatial light modulator 23 a.
- the entrance surface of the cylindrical micro fly's eye lens 8 is positioned at or near a position optically conjugate with the pupil plane 4 c (not shown in FIG. 1 ) of the afocal lens 4 . Therefore, the light intensity distribution (luminance distribution) of the secondary light source formed by the cylindrical micro fly's eye lens 8 is a distribution according to the light intensity distributional areas SPI-SP 4 formed on the pupil plane 4 c by the spatial light modulator 23 a and the front lens unit 4 a of the afocal lens 4 .
- the spatial light modulator 23 a is a movable multi-mirror including the mirror elements SE being a large number of micro reflecting elements arranged regularly and two-dimensionally along one plane with a reflecting surface of a planar shape up, as shown in FIG. 11 .
- Each mirror element SE is movable and an inclination of the reflecting surface thereof, i.e., an angle and direction of inclination of the reflecting surface, is independently controlled by the action of the drive unit 23 c (not shown in FIG. 11 ) operating according to commands from the control unit (not shown).
- Each mirror element SE can be continuously or discretely rotated by a desired angle of rotation around each of axes of rotation along two directions (X-direction and Y-direction) orthogonal to each other and parallel to the reflecting surface. Namely, inclinations of the reflecting surfaces of the respective mirror elements SE can be controlled two-dimensionally.
- a preferred switch control is such that the angle of rotation is switched in multiple stages (e.g., . . . , ⁇ 2.5°, ⁇ 2.0°, . . . , 0°, +0.5°, . . . , +2.5°, . . . ).
- FIG. 11 shows the mirror elements SE with the contour of the square shape, but the contour of the mirror elements SE is not limited to the square. However, the contour may be a shape permitting arrangement of the mirror elements SE with a gap as small as possible (a shape permitting closest packing), from the viewpoint of efficiency of utilization of light. Furthermore, the spacing between two adjacent mirror elements SE may be minimum necessary, from the viewpoint of the light utilization efficiency.
- the postures of the respective mirror elements SE are changed by the action of the drive unit 23 c operating according to control signals from the control unit, whereby each mirror element SE is set in a predetermined orientation.
- the rays reflected at respective predetermined angles by the mirror elements SE of the spatial light modulator 23 a travel through the afocal lens 4 and zoom lens 7 to form a light intensity distribution (illumination pupil luminance distribution) of a multi-polar shape (quadrupolar, pentapolar, . . . ) or another shape on the rear focal point of the cylindrical micro fly's eye lens 8 or on the illumination pupil near it.
- This illumination pupil luminance distribution varies similarly (isotropically) by the action of the zoom lens 7 .
- laterally polarized light reflected at respective predetermined angles by the mirror elements SE of the spatial light modulator 23 a in the spatial light modulation unit 74 A forms, for example, two circular light intensity distributional areas 41 a and 41 b spaced in the Z-direction with a center on the optical axis AX, on the pupil plane 4 c of the afocal lens 4 , as shown in FIG. 4 .
- the light forming the light intensity distributional areas 41 a and 41 b has the polarization direction along the X-direction as indicated by double-headed arrows in the drawing.
- vertically polarized light reflected at respective predetermined angles by the mirror elements of the spatial light modulator in the spatial light modulation unit 74 B forms, for example, two circular light intensity distributional areas 41 c and 41 d spaced in the X-direction with a center on the optical axis AX, on the pupil plane 4 c of the afocal lens 4 , as shown in FIG. 4 .
- the light forming the light intensity distributional areas 41 c and 41 d has the polarization direction along the Z-direction as indicated by double-headed arrows in the drawing.
- the light forming the quadrupolar light intensity distribution 41 on the pupil plane 4 c of the afocal lens 4 forms quadrupolar light intensity distributional areas corresponding to the light intensity distributional areas 41 a - 41 d , on the entrance surface of the cylindrical micro fly's eye lens 8 , and on the rear focal plane of the cylindrical micro fly's eye lens 8 or on the illumination pupil near it (the position where the aperture stop 9 is arranged). Furthermore, quadrupolar light intensity distributional areas corresponding to the light intensity distributional areas 41 a - 41 d are also formed at other illumination pupil positions optically conjugate with the aperture stop 9 , i.e., at the pupil position of the imaging optical system 12 and at the pupil position of the projection optical system PL.
- the spatial light modulation unit 74 A acts, for example, to form two circular light intensity distributional areas 42 a and 42 b spaced in the Z-direction with a center on the optical axis AX, and a circular light intensity distributional area 42 c ′ with a center on the optical axis AX, as shown in the left view in FIG. 5 , on the pupil plane 4 c of the afocal lens 4 .
- the light forming the light intensity distributional areas 42 a , 42 b , 42 c ′ has the polarization direction along the X-direction as indicated by double-headed arrows in the drawing.
- the spatial light modulation unit 74 B acts, for example, to form two circular light intensity distributional areas 42 d and 42 e spaced in the X-direction with a center on the optical axis AX, and a circular light intensity distributional area 42 c ′′ with a center on the optical axis AX, as shown in the center view in FIG. 5 , on the pupil plane 4 c of the afocal lens 4 .
- the light forming the light intensity distributional areas 42 d , 42 e , 42 c ′′ has the polarization direction along the Z-direction as indicated by double-headed arrows in the drawing.
- the light intensity distributional areas 42 a - 42 e of the pentapolar shape are formed on the pupil plane 4 c of the afocal lens 4 , as shown in the right view in FIG. 5 .
- the circular light intensity distributional area 42 c with a center on the optical axis AX is formed by superposition of the light intensity distributional areas 42 c ′ and 42 c ′′.
- the beam with the polarization direction along the Z-direction and the beam with the polarization direction along the X-direction pass through the region of the light intensity distributional area 42 c , as indicated by the double-headed arrows in the drawing.
- the modification example of FIG. 9 is feasible to freely and quickly change the illumination pupil luminance distribution consisting of the first light intensity distribution in the laterally polarized state formed on the pupil plane by the action of the spatial light modulator in the spatial light modulation unit 74 A and the second light intensity distribution in the vertically polarized state formed on the pupil plane by the action of the spatial light modulator in the spatial light modulation unit 74 B.
- the modification example of FIG. 9 is also able to realize the illumination conditions of great variety in terms of the shape, size, and polarization state of the illumination pupil luminance distribution, by changing each of the shapes and sizes of the first light intensity distribution and the second light intensity distribution in mutually different polarization states, as in the embodiment of FIG. 1 .
- the modification example of FIG. 9 uses the diffractive optical element 71 as a light splitter, it has the advantage that an improvement can be made in evenness of the intensity of light incident to the spatial light modulators in the spatial light modulation units 74 A, 74 B. Since there is no variation in angles of the beams immediately after the diffractive optical element 71 even when the position of the beam incident to the diffractive optical element 71 varies, the modification example has the advantage that the positions of the beams incident to the spatial light modulators in the spatial light modulation units 74 A, 74 B are unlikely to vary.
- the incident beam may be split in the shorter-side direction of the rectangular cross section, in order to miniaturize the prism 23 b and, therefore, miniaturize the spatial light modulation units 74 A and 74 B.
- the incident beam may be split in a plane a normal to which is a longitudinal direction of effective regions of the spatial light modulators in the spatial light modulation units 74 A, 74 B.
- the spatial light modulation units 74 A and 74 B can be compactified by splitting the incident beam along the first direction.
- the diffractive optical element 71 is used to split the incident beam into two beams.
- a prism unit 76 having a pair of prism members 76 a and 76 b for example, as shown in FIG. 12 .
- the modification example of FIG. 12 has the configuration similar to the modification example of FIG. 9 , but is different from the modification example of FIG. 9 only in that the prism unit 76 is arranged instead of the diffractive optical element 71 and the condenser lens 72 .
- the prism unit 76 functioning as a light splitter in the modification example of FIG. 12 is composed of the following members arranged in the order named from the light source side (from the left in the drawing): first prism member 76 a with a plane on the light source side and with a refracting surface of a concave and V-shape on the mask side (on the right in the drawing); and second prism member 76 b with a plane on the mask side and with a refracting surface of a convex and V-shape on the light source side.
- the concave refracting surface of the first prism member 76 a is composed of two planes and an intersecting line (ridge line) between them extends along the X-direction.
- the convex refracting surface of the second prism member 76 b is formed so as to be complementary to the concave refracting surface of the first prism member 76 a .
- the convex refracting surface of the second prism member 76 b is also composed of two planes and an intersecting line (ridge line) between them extends along the X-direction.
- the prism unit 76 as a light splitter is composed of the pair of prism members 76 a and 76 b , but it is also possible to construct the light splitter of at least one prism. Furthermore, it is possible to contemplate various forms for specific configurations of the light splitter.
- each of the half wave plates 73 A and 73 B is provided in the optical path between the condenser lens 72 and the spatial light modulation units 74 A and 74 B.
- the half wave plates 73 A and 73 B can also be located at another appropriate position in the optical path of the first beam and at another appropriate position in the optical path of the second beam out of the two beams split by the diffractive optical element 71 or by the prism unit 76 .
- the half wave plate (polarizer or optical rotator in general) may be arranged as detachable from the optical path so that it can be retracted from the optical path when not needed, which can lengthen the life of the half wave plate.
- the half wave plate (polarizer or optical rotator in general) can be arranged as replaceable with a glass substrate having the same path length, which can also lengthen the life of the half wave plate.
- elliptically polarized light can be controlled into desired linearly polarized light.
- a depolarizer depolarizing element
- speckle 20 can be reduced by about ⁇ (1/2).
- the illumination optical apparatus uses the optical unit (spatial light modulation unit) with the pair of spatial light modulators in which the postures of the mirror elements are individually varied, it is feasible to freely and quickly change the illumination pupil luminance distribution consisting of the first light intensity distribution in the first polarization state formed on the illumination pupil by the action of the first spatial light modulator and the second light intensity distribution in the second polarization state formed on the illumination pupil by the action of the second spatial light modulator.
- the illumination pupil luminance distribution consisting of the first light intensity distribution in the first polarization state formed on the illumination pupil by the action of the first spatial light modulator and the second light intensity distribution in the second polarization state formed on the illumination pupil by the action of the second spatial light modulator.
- the illumination optical apparatus is able to realize the illumination conditions of great variety in terms of the shape, the size, and the polarization state of the illumination pupil luminance distribution. Furthermore, the exposure apparatus according to the embodiment and modification examples is able to perform good exposure under an appropriate illumination condition realized according to a pattern characteristic of a mask M, using the illumination optical apparatus capable of realizing the illumination conditions of great variety, and, therefore, to manufacture good devices.
- the apparatus may also be configured as follows: a pupil luminance distribution measuring device is used to measure the illumination pupil luminance distribution during formation of the illumination pupil luminance distribution by means of the spatial light modulation unit and each spatial light modulator in the spatial light modulation unit is controlled according to the result of the measurement.
- a pupil luminance distribution measuring device is used to measure the illumination pupil luminance distribution during formation of the illumination pupil luminance distribution by means of the spatial light modulation unit and each spatial light modulator in the spatial light modulation unit is controlled according to the result of the measurement.
- the mask can be replaced by a variable pattern forming device which forms a predetermined pattern on the basis of predetermined electronic data.
- the use of this variable pattern forming device minimizes the effect on synchronization accuracy even when the pattern surface is vertical.
- the variable pattern forming device applicable herein can be, for example, a DMD (Digital Micromirror Device) including a plurality of reflecting elements driven based on predetermined electronic data.
- the exposure apparatus using DMD is disclosed, for example, in Japanese Patent Application Laid-open No. 2004-304135 and International Publication WO2006/080285 and U.S. Pat. Published Application No. 2007/0296936 corresponding thereto.
- variable pattern forming device may also be used in cases where the pattern surface is horizontal.
- the exposure apparatus is manufactured by assembling various sub-systems containing their respective components as set forth in the scope of claims in the present application, so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. F or ensuring these various accuracies, the following adjustments are carried out before and after the assembling: adjustment for achieving the optical accuracy for various optical systems; adjustment for achieving the mechanical accuracy for various mechanical systems; adjustment for achieving the electrical accuracy for various electrical systems.
- the assembling blocks from the various sub-systems into the exposure apparatus include mechanical connections, wire connections of electric circuits, pipe connections of pneumatic circuits, etc. between the various sub-systems.
- FIG. 13 is a flowchart showing manufacturing blocks of semiconductor devices.
- the manufacturing blocks of semiconductor devices include depositing a metal film on a wafer W to become a substrate for semiconductor devices (block S 40 ); and applying a photoresist as a photosensitive substrate onto the deposited metal film (block S 42 ).
- the subsequent blocks include transferring a pattern formed on a mask (reticle) M, into each shot area on the wafer W, using the projection exposure apparatus of the above embodiment (block S 44 : exposure block); and performing development of the wafer W after completion of the transfer, i.e., development of the photoresist onto which the pattern has been transferred (block S 46 : development block).
- a block subsequent thereto is to process the surface of the wafer W by etching or the like, using the resist pattern made on the surface of the wafer W in block S 46 , as a mask (block S 48 : processing block).
- the resist pattern herein is a photoresist layer in which projections and depressions are formed in the shape corresponding to the pattern transferred by the projection exposure apparatus of the above embodiment, and which the depressions penetrate throughout.
- the surface of the wafer W is processed through this resist pattern.
- the processing carried out in the block S 48 includes, for example, at least either etching of the surface of the wafer W or deposition of a metal film or the like.
- the projection exposure apparatus of the above embodiment performs the transfer of the pattern using the wafer W coated with the photoresist, as a photosensitive substrate or plate P.
- FIG. 14 is a flowchart showing manufacturing blocks of a liquid crystal device such as a liquid-crystal display device. As shown in FIG. 14 , manufacturing blocks of the liquid crystal device include sequentially carrying out a pattern forming block (block S 50 ), a color filter forming block (block S 52 ), a cell assembly block (block S 54 ), and a module assembly block (block S 56 ).
- the pattern forming block of block S 50 is to form a predetermined pattern such as a circuit pattern and an electrode pattern on a glass substrate coated with a photoresist, as a plate P, using the projection exposure apparatus of the above embodiment.
- This pattern forming block includes an exposure block of transferring a pattern onto a photoresist layer by means of the projection exposure apparatus of the above embodiment; a development block of developing the plate P after the transfer of the pattern, i.e., developing the photoresist layer on the glass substrate, to make the photoresist layer in the shape corresponding to the pattern; and a processing block of processing the surface of the glass substrate through the developed photoresist layer.
- the color filter forming block of block S 52 is to form a color filter in a configuration wherein a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arrayed in a matrix pattern, or in a configuration wherein a plurality of sets of three stripe filters of R, G, and B are arrayed in a horizontal scan direction.
- the cell assembly block of block S 54 is to assemble a liquid crystal panel (liquid crystal cell) using the glass substrate with the predetermined pattern thereon in block S 50 and the color filter formed in block S 52 .
- the liquid crystal panel is formed, for example, by pouring a liquid crystal into between the glass substrate and the color filter.
- the module assembly block of block S 56 is to attach various components such as electric circuits and backlights for display operation of this liquid crystal panel, to the liquid crystal panel assembled in block S 54 .
- Embodiments of the present invention IS not limited to the application to the exposure apparatus for manufacture of semiconductor devices, but can also be widely applied, for example, to the exposure apparatus for display devices such as liquid-crystal display devices formed with rectangular glass plates, or plasma displays and to the exposure apparatus for manufacture of various devices such as imaging devices (CCDs or the like), micromachines, thin-film magnetic heads, and DNA chips. Furthermore, embodiments of the present invention can also be applied to the exposure block (exposure apparatus) in manufacture of masks (photomasks, reticles, etc.) with mask patterns of various devices by photolithography.
- the aforementioned embodiment used the ArF excimer laser light (the wavelength: 193 nm) or the KrF excimer laser light (the wavelength: 248 nm) as the exposure light, but the exposure light does not have to be limited to these: embodiments of the present invention can also be applied to any other appropriate laser light source, e.g., an F2 laser light source which supplies the laser light at the wavelength of 157 nm.
- an F2 laser light source which supplies the laser light at the wavelength of 157 nm.
- a technique of filling the interior of the optical path between the projection optical system and the photosensitive substrate with a medium having the refractive index larger than 1.1 typically, a liquid
- a liquid immersion method it is possible to adopt one of the following techniques as a technique of filling the interior of the optical path between the projection optical system and the photosensitive substrate with the liquid: the technique of locally filling the optical path with the liquid as disclosed in International Publication WO99/49504; the technique of moving a stage holding the substrate to be exposed, in a liquid bath as disclosed in Japanese Patent Application Laid-open No.
- the aforementioned embodiment was the application of the present invention to the illumination optical apparatus to illuminate the mask in the exposure apparatus, but, without having to be limited to this, the present invention can also be applied to any commonly-used illumination optical apparatus to illuminate an illumination target surface other than the mask.
- Embodiments and modifications of the present invention can be utilized as an illumination optical apparatus suitably applicable to an exposure apparatus for manufacturing such devices as semiconductor devices, imaging devices, liquid-crystal display devices, and thin-film magnetic heads by lithography.
- the invention is not limited to the fore going embodiments but various changes and modifications of its components may be made without departing from the scope of the present invention.
- the components disclosed in the embodiments may be assembled in any combination for embodying the present invention. F or example, some of the components may be omitted from all components disclosed in the embodiments. Further, components in different embodiments may be appropriately combined.
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Abstract
An illumination optical apparatus has an optical unit. The optical unit has a light splitter to split an incident beam into two beams; a first spatial light modulator which can be arranged in an optical path of a first beam; a second spatial light modulator which can be arranged in an optical path of a second beam; and a light combiner which combines a beam having passed via the first spatial light modulator, with a beam having passed via the second spatial light modulator; each of the first spatial light modulator and the second spatial light modulator has a plurality of optical elements arranged two-dimensionally and controlled individually.
Description
- This application is a Continuation of U.S. application Ser. No. 15/079,793 filed Mar. 24, 2016, which is a Continuation of U.S. application Ser. No. 14/664,022 filed Mar. 20, 2015 (now U.S. Pat. No. 9,341,954), which is a Continuation of U.S. application Ser. No. 13/449,115 filed Apr. 17, 2012 (now U.S. Pat. No. 9,057,877), which is a Division of U.S. application Ser. No. 12/245,021 filed Oct. 3, 2008 (now U.S. Pat. No. 8,379,187), which is based upon and claims the benefit of priorities from U.S. Provisional Application No. 61/006,446, filed on Jan. 14, 2008 and U.S. Provisional Application No. 60/960,996, filed on Oct. 24, 2007, the entire contents of which are incorporated herein by reference.
- An embodiment of the present invention relates to an optical unit, an illumination optical apparatus, an exposure apparatus, and a device manufacturing method.
- In a typical exposure apparatus of this type, a light beam emitted from a light source travels through a fly's eye lens as an optical integrator to form a secondary light source (a predetermined light intensity distribution on an illumination pupil in general) as a substantial surface illuminant consisting of a large number of light sources. The light intensity distribution on the illumination pupil will be referred to hereinafter as “illumination pupil luminance distribution.” The illumination pupil is defined as a position such that an illumination target surface becomes a Fourier transform surface of the illumination pupil by action of an optical system between the illumination pupil and the illumination target surface (a mask or a wafer in the case of the exposure apparatus).
- Beams from the secondary light source are condensed by a condenser lens to supposedly illuminate the mask on which a predetermined pattern is formed. Light passing through the mask travels through a projection optical system to be focused on the wafer, whereby the mask pattern is projected (or transferred) onto the wafer to effect exposure thereof. Since the pattern formed on the mask is a highly integrated one, an even illuminance distribution must be obtained on the wafer in order to accurately transfer this fine pattern onto the wafer.
- There is a conventionally proposed illumination optical apparatus capable of continuously changing the illumination pupil luminance distribution (and, therefore, the illumination condition) without use of a zoom optical system (cf. Japanese Patent Application Laid-open No. 2002-353105). The illumination optical apparatus disclosed in the Application Laid-open No. 2002-353105 uses a movable multi-mirror composed of a large number of micro mirror elements which are arranged in an array form and angles and directions of inclination of which are individually drive-controlled, and is so configured that an incident beam is divided into beams of small units corresponding to reflecting surfaces of the mirror elements, the beams of small units are folded by the multi-mirror to convert a cross section of the incident beam into a desired shape or a desired size, and, in turn, a desired illumination pupil luminance distribution is realized.
- An embodiment of the present invention provides an illumination optical apparatus capable of realizing illumination conditions of greater variety in terms of the shape and size of the illumination pupil luminance distribution. An embodiment of the present invention provides an exposure apparatus capable of performing good exposure under an appropriate illumination condition realized according to a pattern characteristic, using the illumination optical apparatus capable of realizing the illumination conditions of great variety.
- For purposes of summarizing the invention, certain aspects, advantages, and novel features of the invention have been described herein. It is to be understood that not necessarily all such advantages may be achieved in accordance with any particular embodiment of the invention. Thus, the invention may be embodied or carried out in a manner that achieves or optimizes one advantage or group of advantages as taught herein without necessary achieving other advantages as may be taught or suggested herein.
- A first embodiment of the present invention provides an optical unit comprising:
- a light splitter to split an incident beam traveling in an incident light path, into a plurality of beams;
- a first spatial light modulator which can be arranged ill an optical path of a first beam out of the plurality of beams;
- a second spatial light modulator which can be arranged in an optical path of a second beam out of the plurality of beams; and
- a light combiner to combine a beam having passed via the first spatial light modulator, with a beam having passed via the second spatial light modulator, and to direct a resultant beam to an exiting light path;
- wherein at least one spatial light modulator out of the first spatial light modulator and the second spatial light modulator has a plurality of optical elements arranged two-dimensionally and controlled individually, and
- wherein the incident light path on the light splitter side and the exiting light path on the light combiner side extend in the same direction.
- A second embodiment of the present invention provides an illumination optical apparatus to illuminate an illumination target surface on the basis of light from a light source, the illumination optical apparatus comprising:
- the optical unit of the first aspect; and
- a distribution forming optical system which forms a predetermined light intensity distribution on an illumination pupil of the illumination optical apparatus, based on the beams having passed via the first and second spatial light modulators.
- A third embodiment of the present invention provides an exposure apparatus comprising the illumination optical apparatus of the second aspect for illuminating a predetermined pattern, the exposure apparatus performing exposure of the predetermined pattern on a photosensitive substrate.
- A fourth embodiment of the present invention provides a device manufacturing method comprising:
- effecting the exposure of the predetermined pattern on the photosensitive substrate, using the exposure apparatus of the third aspect;
- developing the photosensitive substrate onto which the pattern has been transferred, to form a mask layer in a shape corresponding to the pattern on a surface of the photosensitive substrate; and
- processing the surface of the photosensitive substrate through the mask layer.
- A general architecture that implements the various features of the invention will now be described with reference to the drawings. The drawings and the associated descriptions are provided to illustrate embodiments of the invention and not to limit the scope of the invention.
-
FIG. 1 is a drawing schematically showing a configuration of an exposure apparatus according to an embodiment of the present invention. -
FIG. 2 is a drawing schematically showing a configuration of a spatial light modulation unit. -
FIG. 3 is a perspective view schematically showing a configuration of a cylindrical micro fly's eye lens. -
FIG. 4 is a drawing schematically showing a light intensity distribution of a quadrupolar shape formed on a pupil plane of an afocal lens in the embodiment. -
FIG. 5 is a drawing schematically showing an example of forming an illumination pupil luminance distribution of a pentapolar shape in the embodiment. -
FIG. 6 is a drawing schematically showing a configuration of a spatial light modulation unit according to a modification example in which a light splitter and a light combiner include a common polarization beam splitter. -
FIG. 7 is a drawing schematically showing a configuration of a spatial light modulation unit according to another modification example having transmissive spatial light modulators. -
FIG. 8 is a drawing schematically showing a configuration of an exposure apparatus according to a modification example having a polarization control unit. -
FIG. 9 is a drawing schematically showing a major configuration of a modification example using a diffractive optical element as a light splitter. -
FIG. 10 is a drawing schematically showing a configuration of the spatial light modulation unit shown inFIG. 9 . -
FIG. 11 a partial perspective view of a spatial light modulator in the spatial light modulation unit shown inFIG. 9 . -
FIG. 12 is a drawing schematically showing a major configuration of a modification example using a prism unit as a light splitter. -
FIG. 13 is a flowchart showing manufacturing blocks of semiconductor devices. -
FIG. 14 is a flowchart showing manufacturing blocks of a liquid crystal device such as a liquid-crystal display device. - Embodiments of the present invention will be described on the basis of the accompanying drawings.
FIG. 1 is a drawing schematically showing a configuration of an exposure apparatus according to an embodiment of the present invention.FIG. 2 is a drawing schematically showing a configuration of a spatial light modulation unit. InFIG. 1 , the Z-axis is set along a direction of a normal to a wafer W being a photosensitive substrate, the Y-axis along a direction parallel to the plane ofFIG. 1 in a surface of the wafer W, and the X-axis along a direction perpendicular to the plane ofFIG. 1 in the surface of the wafer W. - With reference to
FIG. 1 , the exposure apparatus of the present embodiment is provided with alight source 1 for supplying exposure light (illumination light). Thelight source 1 can be, for example, an ArF excimer laser light source which supplies light at the wavelength of 193 nm, or a KrF excimer laser light source which supplies light at the wavelength of 248 nm. Light emitted from thelight source 1 is expanded into a beam of a required sectional shape by a shaping optical system 2 and then the expanded beam is incident to a spatial light modulation unit 3. - The spatial light modulation unit 3, as shown in
FIG. 2 , has a pair of 31 and 32, and a pair of spatialprism members light modulators 33 and 34. The light incident along the optical axis AX into an entrance face 31 a of theprism member 31 in the spatial light modulation unit 3 propagates inside theprism member 31 and thereafter impinges upon a polarization separating film 35 formed between the 31 and 32. S-polarized light reflected by the polarization separating film propagates inside theprism members prism member 31 and thereafter impinges upon the first spatial light modulator 33. - The first spatial light modulator 33 has a plurality of mirror elements (optical elements in general) 33 a arranged two-dimensionally, and a
drive unit 33 b (not shown inFIG. 1 ) which individually controls and drives postures of themirror elements 33 a. Similarly, the second spatiallight modulator 34 has a plurality of mirror elements 34 a arranged two-dimensionally, and adrive unit 34 b (not shown inFIG. 1 ) which individually controls and drives postures of the mirror elements 34 a. The 33 b, 34 b individually control and drive the postures of thedrive units mirror elements 33 a, 34 a in accordance with commands from an unrepresented control unit. - Light reflected by the
mirror elements 33 a of the first spatial light modulator 33 propagates inside theprism member 31 and thereafter is incident in the s-polarized state to apolarization separating film 36 formed between the 31 and 32. The light having traveled via the first spatial light modulator 33 to be reflected on theprism members polarization separating film 36, propagates inside theprism member 31 and is then emitted from an exit face 31 b of theprism member 31 to the outside of the spatial light modulation unit 3. In a standard state in which reflecting surfaces of all themirror elements 33 a in the first spatial light modulator 33 are positioned along the XY plane, the light having traveled along the optical axis AX into the spatial light modulation unit 3 and then via the first spatial light modulator 33 is emitted along the optical axis AX from the spatial light modulation unit 3. - On the other hand, p-polarized light having passed through the polarization separating film 35 propagates inside the
prism member 32 and is totally reflected on an interface 32 a between theprism member 32 and a gas (air or inert gas) 37. Thereafter, the totally reflected light is incident to the second spatiallight modulator 34. Light reflected by the mirror elements 34 a in the second spatiallight modulator 34 propagates inside theprism member 32 and is totally reflected on aninterface 32 b between theprism member 32 and thegas 37. Thereafter, the totally reflected light is incident in the p-polarized state to thepolarization separating film 36 formed between the 31 and 32.prism members - The light having traveled via the second spatial
light modulator 34 and having been transmitted by thepolarization separating film 36, propagates inside theprism member 31 and then is emitted from the exit face 31 b of theprism member 31 to the outside of the spatial light modulation unit 3. In a standard state in which reflecting surfaces of all the mirror elements 34 a in the second spatiallight modulator 34 are positioned along the XY plane, the light having traveled along the optical axis AX into the spatial light modulation unit 3 and then via the second spatiallight modulator 34, is emitted along the optical axis AX from the spatial light modulation unit 3. - In the spatial light modulation unit 3, as described above, the polarization separating film 35 formed between the
31 and 32 constitutes a light splitter to split the incident beam into two beams (a plurality of beams in general). Theprism members polarization separating film 36 formed between the 31 and 32 constitutes a light combiner to combine the beam having traveled via the first spatial light modulator 33, with the beam having traveled via the second spatialprism members light modulator 34. - The light emitted from the spatial light modulation unit 3 is then incident to an
afocal lens 4. Theafocal lens 4 is an afocal system (afocal optic) that is so set that the front focal point thereof is approximately coincident with the position of themirror elements 33 a of the first spatial light modulator 33 and with the position of the mirror elements 34 a of the second spatiallight modulator 34 and that the rear focal point thereof is approximately coincident with a position of a predetermined plane 5 indicated by a dashed line in the drawing. - Therefore, the s-polarized beam having traveled via the first spatial light modulator 33 forms, for example, a light intensity distribution of a Z-directionally dipolar shape consisting of two circular light intensity distributional areas spaced in the Z-direction with a center on the optical axis AX, on the pupil plane of the
afocal lens 4, and thereafter is emitted in the dipolar angle distribution from theafocal lens 4. On the other hand, the p-polarized beam having traveled via the second spatiallight modulator 34 forms, for example, a light intensity distribution of an X-directionally dipolar shape consisting of two circular light intensity distributional areas spaced in the X-direction with a center on the optical axis AX, on the pupil plane of theafocal lens 4, and thereafter is emitted in the dipolar angle distribution from theafocal lens 4. - A conical axicon system 6 is arranged at the position of the pupil plane of the
afocal lens 4 or at a position near it in the optical path between a front lens unit 4 a and a rear lens unit 4 b of theafocal lens 4. The configuration and action of the conical axicon system 6 will be described later. The beam having passed through theafocal lens 4 travels through a zoom lens 7 for variation in a value (σvalue=mask-side numerical aperture of the illumination optical apparatus/mask-side numerical aperture of the projection optical system) and then enters a cylindrical micro fly's eye lens 8. - The cylindrical micro fly's eye lens 8, as shown in
FIG. 3 , is composed of a first fly'seye member 8 a arranged on the light source side and a second fly's eye member 8 b arranged on the mask side. Cylindrical lens groups 8 aa and 8 ba arrayed in the X-direction are formed each at the pitch p1 in the light-source-side surface of the first fly'seye member 8 a and in the light-source-side surface of the second fly's eye member 8 b, respectively. Cylindrical lens groups 8 ab and 8 bb arrayed in the Z-direction are formed each at the pitch p2 (P2>p1) in the mask-side surface of the first fly'seye member 8 a and in the mask-side surface of the second fly's eye member 8 b, respectively. - When attention is focused on the refracting action in the X-direction of the cylindrical micro fly's eye lens 8 (i.e., the refracting action in the XY plane), the wavefront of a parallel beam incident along the optical axis AX is divided at the pitch pi along the X-direction by the cylindrical lens group 8 aa formed on the light source side of the first fly's
eye member 8 a, the divided beams are condensed by refracting faces of the cylindrical lens group, the condensed beams are then condensed by refracting faces of the corresponding cylindrical lenses in the cylindrical lens group 8 ba formed on the light source side of the second fly's eye member 8 b, and the condensed beams are converged on the rear focal plane of the cylindrical micro fly's eye lens 8. - When attention is focused on the refracting action in the Z-direction of the cylindrical micro fly's eye lens 8 (i.e., the refracting action in the YZ plane), the wavefront of a parallel beam incident along the optical axis AX is divided at the pitch p2 along the Z-direction by the cylindrical lens group 8 ab formed on the mask side of the first fly's
eye member 8 a, the divided beams are condensed by refracting faces of the cylindrical lens group, the condensed beams are then condensed by refracting faces of the corresponding cylindrical lenses in the cylindrical lens group 8 bb formed on the mask side of the second fly's eye member 8 b, and the condensed beams are converged on the rear focal plane of the cylindrical micro fly's eye lens 8. - As described above, the cylindrical micro fly's eye lens 8 is composed of the first fly's
eye member 8 a and the second fly's eye member 8 b in each of which the cylindrical lens groups are arranged on the two side faces thereof, and exercises the same optical function as a micro fly's eye lens in which a large number of micro refracting faces of a rectangular shape in the size of p1 in the X-direction and in the size of p2 in the Z-direction are integrally formed horizontally and vertically and densely. The cylindrical micro fly's eye lens 8 is able to achieve smaller change in distortion due to variation in surface shapes of the micro refracting faces and, for example, to keep less influence on the illuminance distribution from manufacture errors of the large number of micro refracting faces integrally formed by etching. - The position of the predetermined plane 5 is located near the front focal point of the zoom lens 7 and the entrance surface of the cylindrical micro fly's eye lens 8 is located near the rear focal point of the zoom lens 7. In other words, the zoom lens 7 sets the predetermined plane 5 and the entrance surface of the cylindrical micro fly's eye lens 8 substantially in the Fourier transform relation and, thus, keeps the pupil plane of the
afocal lens 4 approximately optically conjugate with the entrance surface of the cylindrical micro fly's eye lens 8. - Therefore, for example, a quadrupolar illumination field consisting of two circular light intensity distributional areas spaced in the Z-direction with a center on the optical axis AX and two circular light intensity distributional areas spaced in the X-direction with a center on the optical axis AX is formed on the entrance surface of the cylindrical micro fly's eye lens 8 as on the pupil plane of the
afocal lens 4. The overall shape of this quadrupolar illumination field similarly varies depending upon the focal length of the zoom lens 7. The rectangular micro refracting faces as wavefront division units in the cylindrical micro fly's eye lens 8 are of a rectangular shape similar to a shape of an illumination field to be formed on the mask M (and, therefore, similar to a shape of an exposure region to be formed on the wafer W). - The beam incident to the cylindrical micro fly's eye lens 8 is two-dimensionally divided to form a secondary light source with a light intensity distribution approximately identical with the illumination field formed by the incident beam, i.e., a secondary light source of a quadrupolar shape (quadrupolar illumination pupil luminance distribution) consisting of two circular substantial surface illuminants spaced in the Z-direction with a center on the optical axis AX and two circular substantial surface illuminants spaced in the X-direction with a center on the optical axis AX, on or near its rear focal plane (and thus on the illumination pupil). Beams from the secondary light source formed on or near the rear focal plane of the cylindrical micro fly's eye lens 8 are then incident to an aperture stop 9 located near it.
- The aperture stop 9 has quadrupolar apertures (light transmitting portions) corresponding to the secondary light source of the quadrupolar shape formed on or near the rear focal plane of the cylindrical micro fly's eye lens 8. The aperture stop 9 is configured so as to be detachable with respect to the illumination optical path and to be switchable with a plurality of aperture stops having apertures of different sizes and shapes. A method of switching the aperture stops can be, for example, a known turret method or slide method. The aperture stop 9 is arranged at a position approximately optically conjugate with an entrance pupil plane of projection optical system PL described later, and defines a range of the secondary light source that contributes to illumination.
- The beams from the secondary light source limited by the aperture stop 9 travel through a condenser optical system 10 to supposedly illuminate a
mask blind 11. In this way, an illumination field of a rectangular shape according to the shape and focal length of the rectangular micro refracting faces as wavefront division units of the cylindrical micro fly's eye lens 8 is formed on themask blind 11 as an illumination field stop. Beams having passed through a rectangular aperture (light transmitting portion) of themask blind 11 is condensed by an imagingoptical system 12 to superposedly illuminate a mask M on which a predetermined pattern is formed. Namely, the imagingoptical system 12 forms an image of the rectangular aperture of themask blind 11 on the mask M. - A beam having passed through the mask M held on a mask stage MS travels through the projection optical system PL to form an image of the mask pattern on a wafer (photosensitive substrate) W held on a wafer stage WS. In this manner, the pattern of the mask M is sequentially transferred into each of exposure regions on the wafer W by performing one-shot exposure or scan exposure while two-dimensionally driving and controlling the wafer stage WS in the plane (XV plane) perpendicular to the optical axis AX of the projection optical system PL and, therefore, while two-dimensionally driving and controlling the wafer W.
- The conical axicon system 6 is composed of the following members arranged in the order named from the light source side:
first prism member 6 a with a plane on the light source side and with a refracting surface of a concave conical shape on the mask side; and second prism member 6 b with a plane on the mask side and with a refracting surface of a convex conical shape on the light source side. The concave conical refracting surface of thefirst prism member 6 a and the convex conical refracting surface of the second prism member 6 b are complementarily formed so as to be able to contact each other. At least one member out of thefirst prism member 6 a and the second prism member 6 b is configured to be movable along the optical axis AX, whereby the spacing is made variable between the concave conical refracting surface of thefirst prism member 6 a and the convex conical refracting surface of the second prism member 6 b. For easier understanding, the action of the conical axicon system 6 and the action of the zoom lens 7 will be described with focus on the secondary light source of the quadrupolar or annular shape. - In a state in which the concave conical refracting surface of the
first prism member 6 a and the convex conical refracting surface of the second prism member 6 b contact each other, the conical axicon system 6 functions as a plane-parallel plate and causes no effect on the secondary light source of the quadrupolar or annular shape formed. However, as the concave conical refracting surface of thefirst prism member 6 a and the convex conical refracting surface of the second prism member 6 b are separated away from each other, the outside diameter (inside diameter) of the quadrupolar or annular secondary light source varies while keeping constant the width of the quadrupolar or annular secondary light source (half of a difference between a diameter (outside diameter) of a circle circumscribed to the quadrupolar secondary light source and a diameter (inside diameter) of a circle inscribed therein; half of a difference between the outside diameter and the inside diameter of the annular secondary light source). Namely, the annular ratio (inside diameter/outside diameter) and the size (outside diameter) of the quadrupolar or annular secondary light source vary. - The zoom lens 7 has a function to enlarge or reduce the overall shape of the quadrupolar or annular secondary light source similarly (or isotropically). For example, as the focal length of the zoom lens 7 is increased from a minimum value to a predetermined value, the overall shape of the quadrupolar or annular secondary light source is similarly enlarged. In other words, the width and size (outside diameter) of the secondary light source both vary, without change in the annular ratio of the quadrupolar or annular secondary light source, by the action of the zoom lens 7. In this manner, the annular ratio and size (outside diameter) of the quadrupolar or annular secondary light source can be controlled by the actions of the conical axicon system 6 and the zoom lens 7.
- In the present embodiment, the spatial
light modulators 33, 34 to be used can be, for example, those continuously changing each of orientations of themirror elements 33 a, 34 a arranged two-dimensionally. Such spatial light modulators can be selected, for example, from the spatial light modulators disclosed in Japanese Patent Application Laid-open (Translation of PCT Application) No. 10-503300 and European Patent Application Publication EP 779530 corresponding thereto, Japanese Patent Application Laid-open No. 2004-78136 and U.S. Pat. No. 6,900,915 corresponding thereto, Japanese Patent Application Laid-open (Translation of PCT Application) No. 2006-524349 and U.S. Pat. No. 7,095,546 corresponding thereto, and Japanese Patent Application Laid-open No. 2006-113437. It is also possible to control the orientations of themirror elements 33 a, 34 a arranged two-dimensionally, in a plurality of discrete steps. The teachings in European Patent Application Publication EP 779530, U.S. Pat. No. 6,900,915, and U.S. Pat. No. 7,095,546 are incorporated herein by reference. - In the first spatial light modulator 33, each of the postures of the
mirror elements 33 a varies by the action of thedrive unit 33 b operating according to a control signal from the control unit, whereby eachmirror element 33 a is set in a predetermined orientation. The s-polarized light reflected at respective predetermined angles by themirror elements 33 a of the first spatial light modulator 33 forms, for example, two circular light intensity 41 a and 41 b spaced in the Z-direction with a center on the optical axis AX, on the pupil plane of thedistributional areas afocal lens 4, as shown inFIG. 4 . The light forming the light intensity 41 a and 41 b has the polarization direction along the X-direction as indicated by double-headed arrows in the drawing.distributional areas - Similarly, in the second spatial
light modulator 34, each of the postures of the mirror elements 34 a varies by the action of thedrive unit 34 b operating according to a control signal from the control unit, whereby each mirror element 34 a is set in a predetermined orientation. The p-polarized light reflected at respective predetermined angles by the mirror elements 34 a of the second spatiallight modulator 34 forms, for example, two circular light intensity 41 c and 41 d spaced in the X-direction with a center on the optical axis AX, on the pupil plane of thedistributional areas afocal lens 4, as shown inFIG. 4 . The light forming the light intensity 41 c and 41 d has the polarization direction along the Z-direction as indicated by double-headed arrows in the drawing. When the polarization state of the beam incident into the spatial light modulation unit 3 is circular polarization or linear polarization with the polarization direction at an angle of 45° to the X-axis and Z-axis (which will be referred to hereinafter as “45° linear polarization”), the light intensities of the four light intensitydistributional areas distributional areas 41 a-41 d become equal to each other. - The light forming the quadrupolar
light intensity distribution 41 on the pupil plane of theafocal lens 4 forms the light intensity distribution of the quadrupolar shape corresponding to the light intensitydistributional areas 41 a-41 d on the entrance surface of the cylindrical micro fly's eye lens 8, and on the rear focal plane of the cylindrical micro fly's eye lens 8 or on the illumination pupil near it (the position where the aperture stop 9 is arranged). Namely, theafocal lens 4, zoom lens 7, and cylindrical micro fly's eye lens 8 constitute a distribution forming optical system which forms a predetermined light intensity distribution on the illumination pupil of the illumination optical apparatus (2-12), based on the beams having traveled via the first spatial light modulator 33 and the second spatiallight modulator 34. Furthermore, the light intensity distribution of the quadrupolar shape corresponding to the light intensitydistributional areas 41 a-41 d is also formed at other illumination pupil positions optically conjugate with the aperture stop 9, i.e., at the pupil position of the imagingoptical system 12 and at the pupil position of the projection optical system PL. - The exposure apparatus performs exposure under an appropriate illumination condition according to a pattern characteristic, in order to highly accurately and faithfully transfer the pattern of the mask M onto the wafer W. In the present embodiment, the illumination pupil luminance distribution to be formed is the quadrupolar illumination pupil luminance distribution corresponding to the quadrupolar
light intensity distribution 41 shown inFIG. 4 and the beams passing through this quadrupolar illumination pupil luminance distribution are set in a circumferential polarization state. In the circumferential polarization quadrupolar illumination based on the quadrupolar illumination pupil luminance distribution in the circumferential polarization state, the light impinging upon the wafer W as a final illumination target surface is in a polarization state in which the principal component is s-polarized light. - Here the s-polarized light is linearly polarized light with the polarization direction along a direction normal to a plane of incidence (which is polarized light with the electric vector vibrating in the direction normal to the plane of incidence). The plane of incidence is defined as a plane that includes a point where light impinges upon a boundary surface of a medium (illumination target surface: surface of wafer W) and that includes a normal to the boundary surface at that point and a direction of incidence of the light. As a consequence, the circumferential polarization quadrupolar illumination achieves an improvement in optical performance of the projection optical system (the depth of focus and others), whereby a good mask pattern image is obtained with high contrast on the wafer (photosensitive substrate).
- Since the present embodiment uses the spatial light modulation unit 3 with the pair of spatial
light modulators 33, 34 in which the postures of themirror elements 33 a, 34 a each are individually changed, it is feasible to freely and quickly change the illumination pupil luminance distribution consisting of the first light intensity distribution in the s-polarized state formed on the illumination pupil by the action of the first spatial light modulator 33 and the second light intensity distribution in the p-polarized state formed on the illumination pupil by the action of the second spatiallight modulator 34. In other words, the present embodiment is able to realize the illumination conditions of great variety in terms of the shape, size, and polarization state of the illumination pupil luminance distribution, by changing each of the shapes and sizes of the first light intensity distribution and the second light intensity distribution in mutually different polarization states. - As described above, the illumination optical apparatus (2-12) to illuminate the mask M as an illumination target surface on the basis of the light from the
light source 1 in the present embodiment is able to realize the illumination conditions of great variety in terms of the shape, size, and polarization state of the illumination pupil luminance distribution. Furthermore, the exposure apparatus (1-WS) of the present embodiment is able to perform good exposure under an appropriate illumination condition realized according to the pattern characteristic of the mask M, using the illumination optical apparatus (2-12) capable of realizing the illumination conditions of great variety. - In the present embodiment, when the spatial
light modulators 33 and 34 are in the standard state, the traveling direction of the incident beam to the polarization separating film 35 functioning as a light splitter is parallel to (or coincident with) the traveling direction of the exiting beam from thepolarization separating film 36 functioning as a light combiner. In other words, in the standard state of the spatiallight modulators 33 and 34, the traveling directions of the incident beam to the spatial light modulation unit 3 and the exiting beam from the spatial light modulation unit 3 are coincident with (or parallel to) the optical axis AX of the illumination optical apparatus. Since the optical paths upstream and downstream of the spatial light modulation unit 3 are coaxial (or parallel), the optical system can be shared, for example, with the conventional illumination optical apparatus using a diffractive optical element for formation of the illumination pupil luminance distribution. - In the present embodiment, the
mirror elements 33 a of the first spatial light modulator 33 are arranged near theprism member 31 and the mirror elements 34 a of the second spatiallight modulator 34 are arranged near theprism member 32. In this case, the 31, 32 serve as cover members for theprism members mirror elements 33 a, 34 a, which can enhance the durability of the spatiallight modulators 33,34. - In the present embodiment, the spatial light modulation unit 3 may be so designed that the angle θ of incidence of the light (cf.
FIG. 2 ) to the polarization separating film 35 formed between the 31 and 32 is close to the Brewster's angle. This configuration can reduce the reflectance of p-polarized light on the polarization separating film 35 and increase polarization efficiency. Theprism members polarization separating films 35, 36 are not limited to those made of dielectric multilayer films, but may be, for example, those having “a polarization separating layer of a periodic grating structure.” The “polarization separating layer of the periodic grating structure” of this type can be a wire grid type polarization separating element in which a plurality of metal gratings parallel to a first direction are periodically arranged in a second direction orthogonal to the first direction. This technology is disclosed, for example, in Japanese Patent Application Laid-open No. 2005-77819 and U.S. Pat. No. 7,116,478 corresponding thereto. The teachings in U.S. Pat. No. 7,116,478 are incorporated herein by reference. - In the above-described embodiment, the spatial light modulation unit 3 is composed of the pair of
31 and 32 and the pair of spatialprism members light modulators 33 and 34. However, without having to be limited to this, various forms can be contemplated for specific configurations of the spatial light modulation unit 3. - In the foregoing embodiment, the
afocal lens 4, conical axicon system 6, and zoom lens 7 are arranged in the optical path between the spatial light modulation unit 3 and the cylindrical micro fly's eye lens 8. However, without having to be limited to this, these optical members can be replaced, for example, by a condensing optical system functioning as a Fourier transform lens. - In the foregoing embodiment, the p-polarized light having traveled via the polarization separating film 35 functioning as a light splitter is folded toward the second spatial
light modulator 34 by total reflection on the interface 32 a between theprism member 32 and thegas 37 as a first folding surface. Likewise, the p-polarized light having traveled via the second spatiallight modulator 34 is folded toward thepolarization separating film 36 functioning as a light combiner, by total reflection on theinterface 32 b between theprism member 32 and thegas 37. However, without having to be limited to this, it is also possible to provide a reflecting film on theinterfaces 32 a, 32 b. - In the above description, the quadrupolar illumination pupil luminance distribution is formed by forming the Z-directionally dipolar light intensity
41 a, 41 b by the action of the first spatial light modulator 33 and forming the X-directionally dipolar light intensitydistributional areas 41 c, 41 d by the action of the second spatialdistributional areas light modulator 34. However, in the present embodiment, as described above, various forms can be contemplated as to the shape, size, and polarization state of the illumination pupil luminance distribution. The following will schematically describe an example of forming a pentapolar illumination pupil luminance distribution, with reference toFIG. 5 . - In this example, as shown in the left view in
FIG. 5 , for example, two circular light intensity 42 a and 42 b spaced in the Z-direction with a center on the optical axis AX and a circular lightdistributional areas intensity distributional area 42 c′ with a center on the optical axis AX are formed on the pupil plane of theafocal lens 4 by the action of the first spatial light modulator 33. The light forming the light intensity 42 a, 42 b, 42 c′ has the polarization direction along the X-direction as indicated by double-headed arrows in the drawing. On the other hand, as shown in the center view indistributional areas FIG. 5 , for example, two circular light intensitydistributional areas 42 d and 42 e spaced in the X-direction with a center on the optical axis AX and a circular lightintensity distributional area 42 c″ with a center on the optical axis AX are formed on the pupil plane of theafocal lens 4 by the action of the second spatiallight modulator 34. The light forming the light intensity 42 d, 42 e, 42 c″ has the polarization direction along the Z-direction as indicated by double-headed arrows in the drawing.distributional areas - As a result, the light intensity
distributional areas 42 a-42 e of the pentapolar shape are formed, as shown in the right view inFIG. 5 , on the pupil plane of theafocal lens 4. The circular lightintensity distributional area 42 c with a center on the optical axis AX is formed by superposition of the light intensitydistributional areas 42 c′ and 42 c″. When an optical path length difference of not less than a temporal coherence length of thelight source 1 is provided between the s-polarized light traveling via the first spatial light modulator 33 to the pupil plane of theafocal lens 4 and the p-polarized light traveling via the second spatiallight modulator 34 to the pupil plane of theafocal lens 4, the beam with the polarization direction along the Z-direction and the beam with the polarization direction along the X-direction as indicated by the double-headed arrows in the drawing pass through the region of the lightintensity distributional area 42 c. - In contrast to it, when there is no path length difference between the s-polarized light traveling via the first spatial light modulator 33 to the pupil plane of the
afocal lens 4 and the p-polarized light traveling via the second spatiallight modulator 34 to the pupil plane of theafocal lens 4, the polarization state of the beam passing through the region of the lightintensity distributional area 42 c coincides with the polarization state of the incident beam to the spatial light modulation unit 3. When the polarization state of the beam incident to the spatial light modulation unit 3 is circular polarization or 45° linear polarization, the light intensities of the four surrounding light intensity 42 a, 42 b, 42 d, 42 e are equal to each other and the light intensity of the center lightdistributional areas intensity distributional area 42 c is twice the light intensities of the other areas. - As another example, light having passed through a half wave plate may be made incident to the polarization separating film 35 functioning as a light splitter. A ratio of intensities of the s-polarized light and the p-polarized light separated by the polarization separating film 35 can be controlled by rotating the half wave plate arranged on the light source side with respect to the polarization separating film 35, around the optical axis. Namely, it is feasible to control the ratio of intensities of s-polarized light and p-polarized light reaching the pupil plane of the
afocal lens 4. It is also possible to make only the s-polarized light or p-polarized light reach the pupil plane of theafocal lens 4, for example, by controlling the angle of rotation of the half wave plate so as to make the s-polarized light incident to the polarization separating film 35 or by controlling the angle of rotation of the half wave plate so as to make the p-polarized light incident to the polarization separating film 35. This permits a dipolar light intensity distribution (e.g., light intensity 41 a, 41 b indistributional areas FIG. 4 ) to be formed on the pupil plane of theafocal lens 4. - In the foregoing embodiment, the polarization separating film 35 located on the light splitting surface functions as a light splitter and the
polarization separating film 36 located on the light combining surface at the position different from that of the polarization separating film 35 functions as a light combiner. However, without having to be limited to this, it is also possible to adopt a modification example in which the light splitter and the light combiner have a commonpolarization beam splitter 51, for example, as shown inFIG. 6 . In the spatial light modulation unit 3A shown in the modification example ofFIG. 6 , the s-polarized light reflected on a polarization separating film 51 a, in the light incident along the optical axis AX into thepolarization beam splitter 51, travels through a quarter wave plate 52 to become circularly polarized light, and the circularly polarized light is incident to the first spatial light modulator 53. - Light reflected by a plurality of mirror elements of the first spatial light modulator 53 travels through the quarter wave plate 52 to become p-polarized light and the p-polarized light returns to the
polarization beam splitter 51. The p-polarized light having traveled via the first spatial light modulator 53 to enter thepolarization beam splitter 51, passes through the polarization separating film 51 a to be emitted from thepolarization beam splitter 51. In the standard state of the first spatial light modulator 53, the light having traveled along the optical axis AX into the spatial light modulation unit 3A and then via the first spatial light modulator 53 is emitted along the optical axis AX from the spatial light modulation unit 3A. - On the other hand, the p-polarized light passing through the polarization separating film 51 a of the
polarization beam splitter 51 travels through a quarter wave plate 54 to become circularly polarized light, and the circularly polarized light is incident to the second spatial light modulator 55. Light reflected by a plurality of mirror elements of the second spatial light modulator 55 travels through the quarter wave plate 54 to become s-polarized light and the s-polarized light returns to thepolarization beam splitter 51. The s-polarized light having traveled via the second spatial light modulator 55 and having entered thepolarization beam splitter 51, is reflected by the polarization separating film 51 a and the reflected light is emitted from thepolarization beam splitter 51. In the standard state of the second spatial light modulator 55, the light having traveled along the optical axis AX into the spatial light modulation unit 3A and then via the second spatial light modulator 55, is emitted along the optical axis AX from the spatial light modulation unit 3A. - In the above description, the spatial light modulators with the plurality of optical elements arranged two-dimensionally and controlled individually are those in which the orientations of the reflecting surfaces (angles: inclinations) arranged two-dimensionally can be individually controlled. However, without having to be limited to this, it is also possible, for example, to use spatial light modulators in which heights (positions) of the reflecting surfaces arranged two-dimensionally can be individually controlled. The spatial light modulators of this type applicable herein can be selected, for example, from the spatial light modulators disclosed in Japanese Patent Application Laid-open No. 6-281869 and U.S. Pat. No. 5,312,513 corresponding thereto, and in FIG. 1d in Japanese Patent Application Laid-open (Translation of PCT Application) No. 2004-520618 and U.S. Pat. No. 6,885,493 corresponding thereto. These spatial light modulators are able to apply the same action as a diffracting surface, to the incident light by forming a two-dimensional height distribution. The above-described spatial light modulators with the plurality of reflecting surfaces arranged two-dimensionally may be modified, for example, according to the disclosure in Japanese Patent Application Laid-open (Translation of PCT Application) No. 2006-513442 and U.S. Pat. No. 6,891,655 corresponding thereto, or according to the disclosure in Japanese Patent Application Laid-open (Translation of PCT Application) No. 2005-524112 and U.S. Pat. Published Application No. 2005/0095749 corresponding thereto. The teachings in U.S. Pat. No. 5,312,513, U.S. Pat. No. 6,885,493, U.S. Pat. No. 6,891,655, and U.S. Pat. Published Application No. 2005/0095749 are incorporated herein by reference.
- In the above description, the spatial light modulators used are the reflective spatial light modulators with the plurality of mirror elements, but, without having to be limited to this, it is also possible, for example, to use the transmissive spatial light modulator disclosed in U.S. Pat. No. 5,229,872. The teachings in U.S. Pat. No. 5,229,872 are incorporated herein by reference.
FIG. 7 schematically shows a configuration of a spatial light modulation unit according to a modification example having transmissive spatial light modulators. In the spatiallight modulation unit 3B shown in the modification example ofFIG. 7 , the s-polarized light reflected by apolarization separating film 61 a, in light incident along the optical axis AX to apolarization beam splitter 61 functioning as a light splitter, is incident into a first spatiallight modulator 62. - The light having passed through a plurality of optical elements (prism elements or the like) of the first spatial
light modulator 62 is folded by apath folding mirror 63 and thereafter the folded light is incident to apolarization beam splitter 64 functioning as a light combiner. The s-polarized light having traveled via the first spatiallight modulator 62 and having entered thepolarization beam splitter 64 is reflected by apolarization separating film 64 a and the reflected light is emitted from thepolarization beam splitter 64. In the standard state of the first spatiallight modulator 62, the light having traveled along the optical axis AX into the spatiallight modulation unit 3B and then through the first spatiallight modulator 62 is emitted along the optical axis AX from the spatiallight modulation unit 3B. - The p-polarized light having passed through the
polarization separating film 61 a of thepolarization beam splitter 61 is incident into a second spatiallight modulator 65. The light having passed through a plurality of optical elements of the second spatiallight modulator 65 is folded by apath folding mirror 66 and the folded light is incident to thepolarization beam splitter 64. The p-polarized light having traveled via the second spatiallight modulator 65 and having entered thepolarization beam splitter 64, travels through thepolarization separating film 64 a and is emitted from thepolarization beam splitter 64. In the standard state of the second spatiallight modulator 65, the light having traveled along the optical axis AX into the spatiallight modulation unit 3B and then through the second spatiallight modulator 65 is emitted along the optical axis AX from the spatiallight modulation unit 3B. - In the above description, the optical system is so configured that the light from the
light source 1 supplying the light in the polarization state in which linearly polarized light is a principal component, is guided to the spatial light modulation unit (3; 3A; 3B) while substantially maintaining the polarization state of the light, but it is also possible, for example, to adopt a modification example in which apolarization control unit 13 for making the polarization state of exiting light variable is provided in the optical path on thelight source 1 side of the spatial light modulation unit 3, as shown inFIG. 8 . InFIG. 8 the members with the same functionality as inFIG. 1 are denoted by the same reference symbols. - The
polarization control unit 13 shown in the modification example ofFIG. 8 receives the light from thelight source 1 having traveled via the shaping optical system 2 and path folding mirror, and emits light in a desired polarization state toward the spatial light modulation unit 3. Thispolarization control unit 13 is composed, for example, of ahalf wave plate 13 a arranged as rotatable around the optical axis or around an axis parallel to the optical axis, and a rotational drive unit 13 b which rotationally drives thehalf wave plate 13 a. - For example, linearly polarized light with the polarization direction (direction of the electric field) along the 45° direction to the x-axis or the Z-axis in the XZ plane can be supplied to the spatial light modulation unit 3, by rotationally adjusting the
half wave plate 13 a through the rotational drive unit 13 b. At this time, the light quantity of the s-polarized light (the light traveling toward the first spatial light modulator 33) and the light quantity of the p-polarized light (the light traveling toward the second spatial light modulator 34) separated by the polarization separating film of the spatial light modulation unit 3 become approximately equal. - By the rotational adjustment of the
half wave plate 13 a in thepolarization control unit 13, it is feasible to set the ratio of the light quantities of the s-polarized light (the light toward the first spatial light modulator 33) and the p-polarized light (the light toward the second spatial light modulator 34) separated by the polarization separating film of the spatial light modulation unit 3, to any light quantity ratio. For example, in the case where the quadrupolar light intensitydistributional areas 41 a-41 d as shown inFIG. 4 are formed, a ratio of the light intensity of the two light intensity 41 a, 41 b spaced in the Z-direction with a center on the optical axis AX and the light intensity of the two light intensitydistributional areas 41 c, 41 d spaced in the x-direction with a center on the optical axis AX can be set at a desired light quantity ratio.distributional areas - In the modification example shown in
FIG. 8 , the apparatus may be so arranged that an illumination pupil polarization distribution is measured by a pupil polarizationdistribution measuring device 14 and that thepolarization control unit 13 is controlled according to the result of the measurement. In this case, each spatial light modulator in the spatial light modulation unit may be controlled as occasion may demand. This pupil polarizationdistribution measuring device 14 is a device that is provided in the wafer stage WS for holding the wafer W or in a measurement stage provided separately from the wafer stage WS, and that measures the polarization state in the pupil (or in the aperture) of the illumination light (exposure light) incident to the wafer W. The detailed configuration and action of the polarizationstate measuring device 14 are disclosed, for example, in Japanese Patent Application Laid-open No. 2005-5521. The teachings in Japanese Patent Application Laid-open No. 2005-5521 are incorporated herein by reference. - This configuration is effective as follows: for example, even when there is a reflectance difference between polarizations in each path folding mirror arranged in the illumination optical system or in the projection optical system, adverse effect thereby can be prevented. In the modification example of
FIG. 8 the direction of polarization to the spatial light modulation unit 3 is adjusted by thepolarization control unit 13, but the same effect can also be achieved by rotating thelight source 1 itself or the spatial light modulation unit 3 around the optical axis. Thispolarization control unit 13 can also be applied to the modification examples shown inFIGS. 6 and 7 . - In the aforementioned embodiment and the modification examples of
FIGS. 6 to 8 , the light splitter and the light combiner have the polarization separating film (35, 36; 51 a; 61 a, 64 a), but, without having to be limited to this, it is also possible to adopt a configuration in which the light splitter and the light combiner have a separating film to effect amplitude division of a beam. In this case, the first light intensity distribution formed on the illumination pupil by the action of the first spatial light modulator has the same polarization state as the second light intensity distribution formed on the illumination pupil by the action of the second spatial light modulator, but it becomes feasible to realize illumination conditions of great variety in terms of the shape and size of the illumination pupil luminance distribution, by changing each of the shapes and sizes of the first light intensity distribution and the second light intensity distribution. - In the aforementioned embodiment and the modification examples of
FIGS. 6 to 8 , the polarization separating film (35; 51 a; 61 a) is used to split the incident beam into two beams, but, without having to be limited to this, it is also possible, for example, to adopt a configuration in which a diffractive optical element is used to split the incident beam into two beams.FIG. 9 is a drawing schematically showing a major configuration of a modification example using a diffractive optical element as a light splitter. The modification example ofFIG. 9 has a configuration in which the spatial light modulation unit 3 in the embodiment ofFIG. 1 is replaced by a diffractiveoptical element 71, acondenser lens 72, a pair of 73A, 73B, and a pair of spatialhalf wave plates 74A, 74B.light modulation units - In the modification example of
FIG. 9 , the beam from thelight source 1 having traveled through the shaping optical system 2 is incident along the optical axis AX to the diffractiveoptical element 71 as a light splitter. The diffractiveoptical element 71 has such a function that, for example, when a parallel beam with a rectangular cross section is incident along the optical axis AX thereto, it forms two rectangular light intensity distributional areas spaced in the Z-direction with a center on the optical axis AX, in its far field (or Fraunhofer diffraction region). In other words, the diffractiveoptical element 71 functions to split the incident light into two beams. - The first beam out of the two beams split by the diffractive
optical element 71 travels through thecondenser lens 72 functioning as a Fourier transform lens and then enters thehalf wave plate 73A rotatable around the optical axis AXa of the optical path of the first beam or around an axis parallel to the optical axis AXa. Light in a linearly polarized state having passed through thehalf wave plate 73A travels via the spatiallight modulation unit 74A and thereafter travels through the front lens unit 4 a of theafocal lens 4 to reach the pupil plane 4 c of theafocal lens 4. On the other hand, the second beam out of the two beams split by the diffractiveoptical element 71 travels through thecondenser lens 72 and enters thehalf wave plate 73B rotatable around the optical axis AXb of the optical path of the second beam or around an axis parallel to the optical axis AXb. Light in a linearly polarized state having passed through thehalf wave plate 73B travels via the spatiallight modulation unit 74B and thereafter travels through the front lens unit 4 a of theafocal lens 4 to reach the pupil plane 4 c. The front lens unit 4 a of theafocal lens 4 is an optical system which superimposes the beam having passed via the spatial light modulator in the spatiallight modulation unit 74A and the beam having passed via the spatial light modulator in the spatiallight modulation unit 74B, on the pupil plane. 4 c, and functions as a light combiner. - For brevity of description, it is assumed hereinafter that the spatial
light modulation unit 74A arranged in the optical path of the first beam and the spatiallight modulation unit 74B arranged in the optical path of the second beam have the same configuration. It is also assumed that a parallel beam in a linearly polarized state with the polarization direction along a direction at 45° to the Z-direction and the X-direction is incident to the diffractiveoptical element 71, that light in an X-directionally linearly polarized state (laterally polarized state) with polarization along the X-direction is incident to the spatiallight modulation unit 74A because of the action of thehalf wave plate 73A, and that light in a Z-directionally linearly polarized state (vertically polarized state) with polarization along the Z-direction is incident to the spatiallight modulation unit 74B because of the action of thehalf wave plate 73B. - The specific configuration and action of the spatial
light modulation unit 74A will be described below with reference toFIGS. 10 and 11 . Since the spatiallight modulation unit 74B basically has the same configuration as the spatiallight modulation unit 74A, redundant description is omitted about the specific configuration and action of the spatiallight modulation unit 74B. The spatiallight modulation unit 74A, as shown inFIG. 10 , has aprism 23 b made of an optical material, e.g., fluorite, and a reflective spatiallight modulator 23 a attached in proximity to a side face 23 ba of theprism 23 b parallel to the XY plane. The optical material for making theprism 23 b does not have to be limited to fluorite, but may be silica or any other optical material according to the wavelength of the light supplied from thelight source 1. - The
prism 23 b has a form obtained by replacing one side face of a rectangular parallelepiped (a side face opposed to the side face 23 ba to which the spatiallight modulator 23 a is attached in proximity) by side faces 23 bb and 23 bc depressed in a V-shape, and is also called a K prism because of the sectional shape along the YZ plane. The side faces 23 bb and 23 bc depressed in the V-shape in theprism 23 b are defined by two planes PNI and PN2 intersecting at an obtuse angle. The two planes PNI and PN2 both are orthogonal to the YZ plane and make the V-shape along the YZ plane. - Internal surfaces of the two side faces 23 bb and 23 bc in contact along an intersecting line (straight line extending in the X-direction) P3 between the two planes PNI and PN2 function as reflecting surfaces R1 and R2. Namely, the reflecting surface R1 is located on the plane PN1, the reflecting surface R2 is located on the plane PN2, and an angle between the reflecting surfaces R1 and R2 is an obtuse angle. As an example, the angles can be determined as follows: the angle between the reflecting surfaces R1 and R2 is 120°; the angle between the entrance surface IP of the
prism 23 b perpendicular to the optical axis AXa, and the reflecting surface R1 is 60°; the angle between the exit surface OP of theprism 23 b perpendicular to the optical axis AXa, and the reflecting surface R2 is 60°. - In the
prism 23 b, the side face 23 ba to which the spatiallight modulator 23 a is attached in proximity is parallel to the optical axis AXa; and the reflecting surface R1 is located on thelight source 1 side (on the upstream side of the exposure apparatus; on the left inFIG. 10 ) and the reflecting surface R2 is located on theafocal lens 4 side (on the downstream side of the exposure apparatus; on the right inFIG. 10 ). More specifically, the reflecting surface R1 is obliquely arranged with respect to the optical axis AXa and the reflecting surface R2 is obliquely arranged with respect to the optical axis AXa and in symmetry with the reflecting surface R1 with respect to a plane passing the intersecting line P3 and being parallel to the xz plane. The side face 23 ba of the prism 3 b is an optical surface opposed to a surface on which the plurality of mirror elements SE of the spatiallight modulator 23 a are arranged, as described below. - The reflecting surface R1 of the
prism 23 b reflects the light incident through the entrance surface IP, toward the spatiallight modulator 23 a. The spatiallight modulator 23 a is located in the optical path between the reflecting surface R1 and the reflecting surface R2 and reflects the light incident via the reflecting surface R1. The reflecting surface R2 of theprism 23 b reflects the light incident via the spatiallight modulator 23 a to guide the reflected light through the exit surface OP to the front lens unit 4 a of theafocal lens 4. InFIG. 10 , the optical paths are expanded so that the optical axis AXa extends linearly on the rear side of the spatiallight modulation unit 74A, for easier understanding of description.FIG. 10 shows the example wherein theprism 23 b is integrally made of one optical block, but theprism 23 b may be constructed using a plurality of optical blocks. - The spatial
light modulator 23 a applies spatial modulation according to a position of incidence of light, to the light incident via the reflecting surface R1. The spatiallight modulator 23 a is provided with a plurality of micro mirror elements (optical elements) SE arranged two-dimensionally, as shown inFIG. 11 . F or easier description and illustration,FIGS. 10 and 11 show a configuration example in which the spatiallight modulator 23 a has sixteen mirror elements SE of a 4×4 matrix, but the spatial light modulator actually has a much larger number of mirror elements than sixteen elements. - With reference to
FIG. 10 , among a bundle of rays incident along a direction parallel to the optical axis AXa into the spatial light modulation unit 23, a ray L is incident to a mirror element SEa out of the plurality of mirror elements SE, and a ray L2 is incident to a mirror element SEb different from the mirror element SEa. Similarly, a ray U is incident to a mirror element SEc different from the mirror elements SEa, SEb and a ray LA is incident to a mirror element SEd different from the mirror elements Sea SEc. The mirror elements SEa-SEd apply respective spatial modulations set according to their positions, to the rays LI-L4, respectively. - The spatial light modulation unit 23 is so configured that in the standard state in which the reflecting surfaces of all the mirror elements SE of the spatial
light modulator 23 a are set in parallel with the XY plane, the rays incident along a direction parallel to the optical axis AXa to the reflecting surface R1 travel via the spatiallight modulator 23 a and thereafter are reflected to a direction parallel to the optical axis AXa by the reflecting surface R2. Furthermore, the spatial light modulation unit 23 is so configured that an air equivalent length from the entrance surface IP of theprism 23 b via the mirror elements SEa-SEd to the exit surface OP is equal to an air-equivalent length from the position corresponding to the entrance surface IP to the position corresponding to the exit surface OP without theprism 23 b in the optical path. An air-equivalent length herein is obtained by converting an optical path length in an optical system into an optical path length in air having the refractive index of 1, and an air-equivalent length in a medium having the refractive index n is obtained by multiplying an optical path length therein by 1/n. - The surface in which the plurality of mirror elements SE of the spatial
light modulator 23 a are arrayed is positioned at or near the rear focal point of thecondenser lens 72 and positioned at or near the front focal point of theafocal lens 4. Therefore, a beam having a cross section of a shape according to the characteristic of the diffractive optical element 71 (e.g., a rectangular shape) is incident to the spatiallight modulator 23 a. The light reflected by the mirror elements SEaSEd of the spatiallight modulator 23 a and provided with a predetermined angle distribution forms predetermined light intensity distributional areas SP I-SP4 on the pupil plane 4 c of theafocal lens 4. Namely, the front lens unit 4 a of theafocal lens 4 converts angles given to the exiting light by the mirror elements SEa-SEd of the spatiallight modulator 23 a, into positions on the plane 4 c being a far field region (Fraunhofer diffraction region) of the spatiallight modulator 23 a. - With reference to
FIG. 1 , the entrance surface of the cylindrical micro fly's eye lens 8 is positioned at or near a position optically conjugate with the pupil plane 4 c (not shown inFIG. 1 ) of theafocal lens 4. Therefore, the light intensity distribution (luminance distribution) of the secondary light source formed by the cylindrical micro fly's eye lens 8 is a distribution according to the light intensity distributional areas SPI-SP4 formed on the pupil plane 4 c by the spatiallight modulator 23 a and the front lens unit 4 a of theafocal lens 4. The spatiallight modulator 23 a is a movable multi-mirror including the mirror elements SE being a large number of micro reflecting elements arranged regularly and two-dimensionally along one plane with a reflecting surface of a planar shape up, as shown inFIG. 11 . - Each mirror element SE is movable and an inclination of the reflecting surface thereof, i.e., an angle and direction of inclination of the reflecting surface, is independently controlled by the action of the drive unit 23 c (not shown in
FIG. 11 ) operating according to commands from the control unit (not shown). Each mirror element SE can be continuously or discretely rotated by a desired angle of rotation around each of axes of rotation along two directions (X-direction and Y-direction) orthogonal to each other and parallel to the reflecting surface. Namely, inclinations of the reflecting surfaces of the respective mirror elements SE can be controlled two-dimensionally. - In a case where the reflecting surface of each mirror element SE is discretely rotated, a preferred switch control is such that the angle of rotation is switched in multiple stages (e.g., . . . , −2.5°, −2.0°, . . . , 0°, +0.5°, . . . , +2.5°, . . . ).
FIG. 11 shows the mirror elements SE with the contour of the square shape, but the contour of the mirror elements SE is not limited to the square. However, the contour may be a shape permitting arrangement of the mirror elements SE with a gap as small as possible (a shape permitting closest packing), from the viewpoint of efficiency of utilization of light. Furthermore, the spacing between two adjacent mirror elements SE may be minimum necessary, from the viewpoint of the light utilization efficiency. - In the spatial
light modulator 23 a, the postures of the respective mirror elements SE are changed by the action of the drive unit 23 c operating according to control signals from the control unit, whereby each mirror element SE is set in a predetermined orientation. The rays reflected at respective predetermined angles by the mirror elements SE of the spatiallight modulator 23 a travel through theafocal lens 4 and zoom lens 7 to form a light intensity distribution (illumination pupil luminance distribution) of a multi-polar shape (quadrupolar, pentapolar, . . . ) or another shape on the rear focal point of the cylindrical micro fly's eye lens 8 or on the illumination pupil near it. This illumination pupil luminance distribution varies similarly (isotropically) by the action of the zoom lens 7. - Specifically, laterally polarized light reflected at respective predetermined angles by the mirror elements SE of the spatial
light modulator 23 a in the spatiallight modulation unit 74A forms, for example, two circular light intensity 41 a and 41 b spaced in the Z-direction with a center on the optical axis AX, on the pupil plane 4 c of thedistributional areas afocal lens 4, as shown inFIG. 4 . The light forming the light intensity 41 a and 41 b has the polarization direction along the X-direction as indicated by double-headed arrows in the drawing.distributional areas - Similarly, vertically polarized light reflected at respective predetermined angles by the mirror elements of the spatial light modulator in the spatial
light modulation unit 74B forms, for example, two circular light intensity 41 c and 41 d spaced in the X-direction with a center on the optical axis AX, on the pupil plane 4 c of thedistributional areas afocal lens 4, as shown inFIG. 4 . The light forming the light intensity 41 c and 41 d has the polarization direction along the Z-direction as indicated by double-headed arrows in the drawing.distributional areas - The light forming the quadrupolar
light intensity distribution 41 on the pupil plane 4 c of theafocal lens 4 forms quadrupolar light intensity distributional areas corresponding to the light intensitydistributional areas 41 a-41 d, on the entrance surface of the cylindrical micro fly's eye lens 8, and on the rear focal plane of the cylindrical micro fly's eye lens 8 or on the illumination pupil near it (the position where the aperture stop 9 is arranged). Furthermore, quadrupolar light intensity distributional areas corresponding to the light intensitydistributional areas 41 a-41 d are also formed at other illumination pupil positions optically conjugate with the aperture stop 9, i.e., at the pupil position of the imagingoptical system 12 and at the pupil position of the projection optical system PL. - In another example, the spatial
light modulation unit 74A acts, for example, to form two circular light intensity 42 a and 42 b spaced in the Z-direction with a center on the optical axis AX, and a circular lightdistributional areas intensity distributional area 42 c′ with a center on the optical axis AX, as shown in the left view inFIG. 5 , on the pupil plane 4 c of theafocal lens 4. The light forming the light intensity 42 a, 42 b, 42 c′ has the polarization direction along the X-direction as indicated by double-headed arrows in the drawing. On the other hand, the spatialdistributional areas light modulation unit 74B acts, for example, to form two circular light intensitydistributional areas 42 d and 42 e spaced in the X-direction with a center on the optical axis AX, and a circular lightintensity distributional area 42 c″ with a center on the optical axis AX, as shown in the center view inFIG. 5 , on the pupil plane 4 c of theafocal lens 4. The light forming the light intensity 42 d, 42 e, 42 c″ has the polarization direction along the Z-direction as indicated by double-headed arrows in the drawing.distributional areas - As a consequence, the light intensity
distributional areas 42 a-42 e of the pentapolar shape are formed on the pupil plane 4 c of theafocal lens 4, as shown in the right view inFIG. 5 . The circular lightintensity distributional area 42 c with a center on the optical axis AX is formed by superposition of the light intensitydistributional areas 42 c′ and 42 c″. When an optical path length difference of not less than the temporal coherence length of thelight source 1 is provided between the horizontally polarized light having traveled via the spatiallight modulation unit 74A to reach the pupil plane 4 c of theafocal lens 4 and the vertically polarized light having traveled via the spatiallight modulation unit 74B to reach the pupil plane of theafocal lens 4, the beam with the polarization direction along the Z-direction and the beam with the polarization direction along the X-direction pass through the region of the lightintensity distributional area 42 c, as indicated by the double-headed arrows in the drawing. - In the modification example of
FIG. 9 , as described above, it is feasible to freely and quickly change the illumination pupil luminance distribution consisting of the first light intensity distribution in the laterally polarized state formed on the pupil plane by the action of the spatial light modulator in the spatiallight modulation unit 74A and the second light intensity distribution in the vertically polarized state formed on the pupil plane by the action of the spatial light modulator in the spatiallight modulation unit 74B. In other words, the modification example ofFIG. 9 is also able to realize the illumination conditions of great variety in terms of the shape, size, and polarization state of the illumination pupil luminance distribution, by changing each of the shapes and sizes of the first light intensity distribution and the second light intensity distribution in mutually different polarization states, as in the embodiment ofFIG. 1 . - Since the modification example of
FIG. 9 uses the diffractiveoptical element 71 as a light splitter, it has the advantage that an improvement can be made in evenness of the intensity of light incident to the spatial light modulators in the spatial 74A, 74B. Since there is no variation in angles of the beams immediately after the diffractivelight modulation units optical element 71 even when the position of the beam incident to the diffractiveoptical element 71 varies, the modification example has the advantage that the positions of the beams incident to the spatial light modulators in the spatial 74A, 74B are unlikely to vary.light modulation units - In the modification example of
FIG. 9 , where a beam with a rectangular cross section is incident to the diffractiveoptical element 71, the incident beam may be split in the shorter-side direction of the rectangular cross section, in order to miniaturize theprism 23 b and, therefore, miniaturize the spatial 74A and 74B. In other words, the incident beam may be split in a plane a normal to which is a longitudinal direction of effective regions of the spatial light modulators in the spatiallight modulation units 74A, 74B. In general, where the incident light has a sectional shape in which a length along a first direction in the cross section of the incident beam to the diffractivelight modulation units optical element 71 is smaller than a length along a second direction perpendicular to the first direction, the spatial 74A and 74B can be compactified by splitting the incident beam along the first direction.light modulation units - In the modification example of
FIG. 9 , the diffractiveoptical element 71 is used to split the incident beam into two beams. However, without having to be limited to this, it is also possible to adopt a configuration of splitting the incident beam into two beams by use of aprism unit 76 having a pair of 76 a and 76 b, for example, as shown in FIG. 12. The modification example ofprism members FIG. 12 has the configuration similar to the modification example ofFIG. 9 , but is different from the modification example ofFIG. 9 only in that theprism unit 76 is arranged instead of the diffractiveoptical element 71 and thecondenser lens 72. InFIG. 12 , the elements with the same functionality as the constituent elements shown inFIG. 9 are denoted by the same reference symbols as those inFIG. 9 . Since the modification example shown inFIG. 12 uses theprism unit 76 having the pair of 76 a and 76 b, to split the incident beam into two beams, it becomes feasible to miniaturize the apparatus.prism members - The
prism unit 76 functioning as a light splitter in the modification example ofFIG. 12 is composed of the following members arranged in the order named from the light source side (from the left in the drawing):first prism member 76 a with a plane on the light source side and with a refracting surface of a concave and V-shape on the mask side (on the right in the drawing); andsecond prism member 76 b with a plane on the mask side and with a refracting surface of a convex and V-shape on the light source side. The concave refracting surface of thefirst prism member 76 a is composed of two planes and an intersecting line (ridge line) between them extends along the X-direction. The convex refracting surface of thesecond prism member 76 b is formed so as to be complementary to the concave refracting surface of thefirst prism member 76 a. Specifically, the convex refracting surface of thesecond prism member 76 b is also composed of two planes and an intersecting line (ridge line) between them extends along the X-direction. In the modification example ofFIG. 12 , theprism unit 76 as a light splitter is composed of the pair of 76 a and 76 b, but it is also possible to construct the light splitter of at least one prism. Furthermore, it is possible to contemplate various forms for specific configurations of the light splitter.prism members - In the modification example of
FIG. 9 and the modification example ofFIG. 12 , each of the 73A and 73B is provided in the optical path between thehalf wave plates condenser lens 72 and the spatial 74A and 74B. However, without having to be limited to this, thelight modulation units 73A and 73B can also be located at another appropriate position in the optical path of the first beam and at another appropriate position in the optical path of the second beam out of the two beams split by the diffractivehalf wave plates optical element 71 or by theprism unit 76. - In the modification example of
FIG. 9 and the modification example ofFIG. 12 , thehalf wave plate 73A rotatable around the predetermined axis is provided in the optical path of the first beam and thehalf wave plate 73B rotatable around the predetermined axis is provided in the optical path of the second beam. However, without having to be limited to this, it is also possible to adopt a configuration wherein a half wave plate is provided so as to be rotatable around a predetermined axis or stationary, in at least one optical path, or a configuration wherein a polarizer or an optical rotator other than the half wave plate is provided so as to be rotatable around a predetermined axis or stationary, in at least one optical path. - The half wave plate (polarizer or optical rotator in general) may be arranged as detachable from the optical path so that it can be retracted from the optical path when not needed, which can lengthen the life of the half wave plate. Similarly, the half wave plate (polarizer or optical rotator in general) can be arranged as replaceable with a glass substrate having the same path length, which can also lengthen the life of the half wave plate.
- When a quarter wave plate rotatable around a predetermined axis is arranged in addition to the half wave plate, elliptically polarized light can be controlled into desired linearly polarized light. A depolarizer (depolarizing element) can also be used in addition to or instead of the half wave plate, whereby the light can be obtained in a desired unpolarized state. It is also possible, for example, to insert a plane-parallel plate of a required thickness in one optical path so as to provide the path length difference of not less than the temporal coherence length between the first beam and the second beam as described above, whereby a beam passing through the same region on the illumination pupil can be depolarized. Furthermore, when the optical path length difference of not less than the temporal coherence length is provided between the first beam and the second beam,
speckle 20 can be reduced by about √(1/2). - Since the illumination optical apparatus according to the embodiment and modification examples uses the optical unit (spatial light modulation unit) with the pair of spatial light modulators in which the postures of the mirror elements are individually varied, it is feasible to freely and quickly change the illumination pupil luminance distribution consisting of the first light intensity distribution in the first polarization state formed on the illumination pupil by the action of the first spatial light modulator and the second light intensity distribution in the second polarization state formed on the illumination pupil by the action of the second spatial light modulator. In other words, by changing each of the shapes and sizes of the first light intensity distribution and the second light intensity distribution in mutually different polarization states, it is feasible to realize the illumination conditions of great variety in terms of the shape, size, and polarization state of the illumination pupil luminance distribution.
- In this manner, the illumination optical apparatus according to the embodiment and the modification examples is able to realize the illumination conditions of great variety in terms of the shape, the size, and the polarization state of the illumination pupil luminance distribution. Furthermore, the exposure apparatus according to the embodiment and modification examples is able to perform good exposure under an appropriate illumination condition realized according to a pattern characteristic of a mask M, using the illumination optical apparatus capable of realizing the illumination conditions of great variety, and, therefore, to manufacture good devices.
- In the above-described embodiment and each modification example, the apparatus may also be configured as follows: a pupil luminance distribution measuring device is used to measure the illumination pupil luminance distribution during formation of the illumination pupil luminance distribution by means of the spatial light modulation unit and each spatial light modulator in the spatial light modulation unit is controlled according to the result of the measurement. Such technology is disclosed, for example, in Japanese Patent Application Laid-open No. 2006-54328, and Japanese Patent Application Laid-open No. 2003-22967 and U.S. Pat. Published Application No. 2003/0038225 corresponding thereto. The teachings in U.S. Pat. Published Application No. 2003/0038225 are incorporated herein by reference.
- In the aforementioned embodiment, the mask can be replaced by a variable pattern forming device which forms a predetermined pattern on the basis of predetermined electronic data. The use of this variable pattern forming device minimizes the effect on synchronization accuracy even when the pattern surface is vertical. The variable pattern forming device applicable herein can be, for example, a DMD (Digital Micromirror Device) including a plurality of reflecting elements driven based on predetermined electronic data. The exposure apparatus using DMD is disclosed, for example, in Japanese Patent Application Laid-open No. 2004-304135 and International Publication WO2006/080285 and U.S. Pat. Published Application No. 2007/0296936 corresponding thereto. Besides the reflective spatial light modulators of the non-emission type like DMD, it is also possible to use transmissive spatial light modulators or to use self-emission type image display devices. The variable pattern forming device may also be used in cases where the pattern surface is horizontal. The teachings in U.S. Pat. Published Application No. 2007/0296936 are incorporated herein by reference.
- The exposure apparatus according to the foregoing embodiment is manufactured by assembling various sub-systems containing their respective components as set forth in the scope of claims in the present application, so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. F or ensuring these various accuracies, the following adjustments are carried out before and after the assembling: adjustment for achieving the optical accuracy for various optical systems; adjustment for achieving the mechanical accuracy for various mechanical systems; adjustment for achieving the electrical accuracy for various electrical systems. The assembling blocks from the various sub-systems into the exposure apparatus include mechanical connections, wire connections of electric circuits, pipe connections of pneumatic circuits, etc. between the various sub-systems. It is needless to mention that there are assembling blocks of the individual sub-systems, before the assembling blocks from the various sub-systems into the exposure apparatus. After completion of the assembling blocks from the various sub-systems into the exposure apparatus, overall adjustment is carried out to ensure various accuracies as the entire exposure apparatus. The manufacture of exposure apparatus is desirably performed in a clean room in which the temperature, cleanliness, etc. are controlled.
- The following will describe a device manufacturing method using the exposure apparatus of the above embodiment.
FIG. 13 is a flowchart showing manufacturing blocks of semiconductor devices. As shown inFIG. 13 , the manufacturing blocks of semiconductor devices include depositing a metal film on a wafer W to become a substrate for semiconductor devices (block S40); and applying a photoresist as a photosensitive substrate onto the deposited metal film (block S42). The subsequent blocks include transferring a pattern formed on a mask (reticle) M, into each shot area on the wafer W, using the projection exposure apparatus of the above embodiment (block S44: exposure block); and performing development of the wafer W after completion of the transfer, i.e., development of the photoresist onto which the pattern has been transferred (block S46: development block). A block subsequent thereto is to process the surface of the wafer W by etching or the like, using the resist pattern made on the surface of the wafer W in block S46, as a mask (block S48: processing block). - The resist pattern herein is a photoresist layer in which projections and depressions are formed in the shape corresponding to the pattern transferred by the projection exposure apparatus of the above embodiment, and which the depressions penetrate throughout. In the block S48, the surface of the wafer W is processed through this resist pattern. The processing carried out in the block S48 includes, for example, at least either etching of the surface of the wafer W or deposition of a metal film or the like. In the block S44, the projection exposure apparatus of the above embodiment performs the transfer of the pattern using the wafer W coated with the photoresist, as a photosensitive substrate or plate P.
-
FIG. 14 is a flowchart showing manufacturing blocks of a liquid crystal device such as a liquid-crystal display device. As shown inFIG. 14 , manufacturing blocks of the liquid crystal device include sequentially carrying out a pattern forming block (block S50), a color filter forming block (block S52), a cell assembly block (block S54), and a module assembly block (block S56). - The pattern forming block of block S50 is to form a predetermined pattern such as a circuit pattern and an electrode pattern on a glass substrate coated with a photoresist, as a plate P, using the projection exposure apparatus of the above embodiment. This pattern forming block includes an exposure block of transferring a pattern onto a photoresist layer by means of the projection exposure apparatus of the above embodiment; a development block of developing the plate P after the transfer of the pattern, i.e., developing the photoresist layer on the glass substrate, to make the photoresist layer in the shape corresponding to the pattern; and a processing block of processing the surface of the glass substrate through the developed photoresist layer.
- The color filter forming block of block S52 is to form a color filter in a configuration wherein a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arrayed in a matrix pattern, or in a configuration wherein a plurality of sets of three stripe filters of R, G, and B are arrayed in a horizontal scan direction.
- The cell assembly block of block S54 is to assemble a liquid crystal panel (liquid crystal cell) using the glass substrate with the predetermined pattern thereon in block S50 and the color filter formed in block S52. Specifically, the liquid crystal panel is formed, for example, by pouring a liquid crystal into between the glass substrate and the color filter. The module assembly block of block S56 is to attach various components such as electric circuits and backlights for display operation of this liquid crystal panel, to the liquid crystal panel assembled in block S54.
- Embodiments of the present invention IS not limited to the application to the exposure apparatus for manufacture of semiconductor devices, but can also be widely applied, for example, to the exposure apparatus for display devices such as liquid-crystal display devices formed with rectangular glass plates, or plasma displays and to the exposure apparatus for manufacture of various devices such as imaging devices (CCDs or the like), micromachines, thin-film magnetic heads, and DNA chips. Furthermore, embodiments of the present invention can also be applied to the exposure block (exposure apparatus) in manufacture of masks (photomasks, reticles, etc.) with mask patterns of various devices by photolithography.
- The aforementioned embodiment used the ArF excimer laser light (the wavelength: 193 nm) or the KrF excimer laser light (the wavelength: 248 nm) as the exposure light, but the exposure light does not have to be limited to these: embodiments of the present invention can also be applied to any other appropriate laser light source, e.g., an F2 laser light source which supplies the laser light at the wavelength of 157 nm.
- In the foregoing embodiment, it is also possible to apply a technique of filling the interior of the optical path between the projection optical system and the photosensitive substrate with a medium having the refractive index larger than 1.1 (typically, a liquid), which is so called a liquid immersion method. In this case, it is possible to adopt one of the following techniques as a technique of filling the interior of the optical path between the projection optical system and the photosensitive substrate with the liquid: the technique of locally filling the optical path with the liquid as disclosed in International Publication WO99/49504; the technique of moving a stage holding the substrate to be exposed, in a liquid bath as disclosed in Japanese Patent Application Laid-open No. 6-124873; the technique of forming a liquid bath of a predetermined depth on a stage and holding the substrate therein as disclosed in Japanese Patent Application Laid-open No. 10-303114, and so on. The teachings in WO99/49504, Japanese Patent Application Laid-open No. 6 124873, and Japanese Patent Application Laid-open No. 10-303114 are incorporated herein by reference.
- The aforementioned embodiment was the application of the present invention to the illumination optical apparatus to illuminate the mask in the exposure apparatus, but, without having to be limited to this, the present invention can also be applied to any commonly-used illumination optical apparatus to illuminate an illumination target surface other than the mask.
- Embodiments and modifications of the present invention can be utilized as an illumination optical apparatus suitably applicable to an exposure apparatus for manufacturing such devices as semiconductor devices, imaging devices, liquid-crystal display devices, and thin-film magnetic heads by lithography.
- The invention is not limited to the fore going embodiments but various changes and modifications of its components may be made without departing from the scope of the present invention. Also, the components disclosed in the embodiments may be assembled in any combination for embodying the present invention. F or example, some of the components may be omitted from all components disclosed in the embodiments. Further, components in different embodiments may be appropriately combined.
Claims (1)
1. An optical unit comprising:
a light splitter, arranged in an incident light path, to split an incident beam traveling in the incident light path, into a plurality of beams;
a first spatial light modulator which can be arranged in an optical path of a first beam out of the plurality of beams;
a second spatial light modulator which can be arranged in an optical path of a second beam out of the plurality of beams; and
a light combiner, arranged in an exiting light path, to combine a beam having passed via the first spatial light modulator, with a beam having passed via the second spatial light modulator, and to direct a resultant beam to the exiting light path,
wherein at least one spatial light modulator out of the first spatial light modulator and the second spatial light modulator includes a plurality of optical elements arranged two-dimensionally and controlled individually, and
wherein the incident light path on the light splitter side and the exiting light path on the light combiner side extend in the same direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/856,918 US20180143444A1 (en) | 2007-10-24 | 2017-12-28 | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US96099607P | 2007-10-24 | 2007-10-24 | |
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| US14/664,022 US9341954B2 (en) | 2007-10-24 | 2015-03-20 | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US15/079,793 US9857599B2 (en) | 2007-10-24 | 2016-03-24 | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US15/856,918 US20180143444A1 (en) | 2007-10-24 | 2017-12-28 | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
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| US13/449,115 Expired - Fee Related US9057877B2 (en) | 2007-10-24 | 2012-04-17 | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US14/664,022 Active US9341954B2 (en) | 2007-10-24 | 2015-03-20 | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US15/079,793 Expired - Fee Related US9857599B2 (en) | 2007-10-24 | 2016-03-24 | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US15/856,918 Abandoned US20180143444A1 (en) | 2007-10-24 | 2017-12-28 | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
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| US12/245,021 Expired - Fee Related US8379187B2 (en) | 2007-10-24 | 2008-10-03 | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US13/449,115 Expired - Fee Related US9057877B2 (en) | 2007-10-24 | 2012-04-17 | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US14/664,022 Active US9341954B2 (en) | 2007-10-24 | 2015-03-20 | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US15/079,793 Expired - Fee Related US9857599B2 (en) | 2007-10-24 | 2016-03-24 | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
Country Status (8)
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| EP (6) | EP2620799B1 (en) |
| JP (3) | JP5141491B2 (en) |
| KR (5) | KR20190025062A (en) |
| CN (4) | CN103777471B (en) |
| SG (2) | SG10201708650WA (en) |
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Families Citing this family (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101187612B1 (en) | 2003-04-09 | 2012-10-08 | 가부시키가이샤 니콘 | Exposure method and apparatus, and device manufacturing method |
| TWI628698B (en) * | 2003-10-28 | 2018-07-01 | 尼康股份有限公司 | Optical illumination device, exposure device, exposure method and device manufacturing method |
| TW201809801A (en) * | 2003-11-20 | 2018-03-16 | 日商尼康股份有限公司 | Optical illumination device, exposure device, exposure method, and component manufacturing method |
| TWI395068B (en) * | 2004-01-27 | 2013-05-01 | 尼康股份有限公司 | Optical system, exposure device and method of exposure |
| TWI360837B (en) | 2004-02-06 | 2012-03-21 | Nikon Corp | Polarization changing device, optical illumination |
| TWI453795B (en) * | 2005-01-21 | 2014-09-21 | 尼康股份有限公司 | Illumination optical device, exposure device, exposure method, and component manufacturing method |
| US8451427B2 (en) | 2007-09-14 | 2013-05-28 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
| JP5267029B2 (en) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
| WO2009050976A1 (en) * | 2007-10-16 | 2009-04-23 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
| SG10201602750RA (en) | 2007-10-16 | 2016-05-30 | Nikon Corp | Illumination Optical System, Exposure Apparatus, And Device Manufacturing Method |
| US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
| WO2009128293A1 (en) * | 2008-04-14 | 2009-10-22 | 株式会社ニコン | Spatial light modulation unit, lighting optical system, exposure apparatus and method for manufacturing device |
| EP2282188B1 (en) | 2008-05-28 | 2015-03-11 | Nikon Corporation | Illumination optical system and exposure apparatus |
| JP5353408B2 (en) * | 2009-04-23 | 2013-11-27 | 株式会社ニコン | Illumination optical system, exposure apparatus, and device manufacturing method |
| JP2010272640A (en) * | 2009-05-20 | 2010-12-02 | Nikon Corp | Illumination apparatus, exposure apparatus, and device manufacturing method |
| JP5403244B2 (en) * | 2009-07-16 | 2014-01-29 | 株式会社ニコン | Spatial light modulation unit, illumination optical system, exposure apparatus, and device manufacturing method |
| US20110037962A1 (en) * | 2009-08-17 | 2011-02-17 | Nikon Corporation | Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method |
| JP5327715B2 (en) * | 2009-08-17 | 2013-10-30 | 株式会社ニコン | Illumination optical system, exposure apparatus, and device manufacturing method |
| JP5553635B2 (en) * | 2009-10-23 | 2014-07-16 | キヤノン株式会社 | Compensating optical device, imaging device, compensating optical method, and imaging method |
| JP2011108851A (en) * | 2009-11-17 | 2011-06-02 | Canon Inc | Exposure apparatus and device fabrication method |
| JP5598733B2 (en) * | 2009-12-23 | 2014-10-01 | 株式会社ニコン | Spatial light modulation unit, illumination optical system, exposure apparatus, and device manufacturing method |
| JP5842615B2 (en) | 2010-02-03 | 2016-01-13 | 株式会社ニコン | Illumination optical apparatus, illumination method, and exposure method and apparatus |
| KR20120116329A (en) | 2010-02-20 | 2012-10-22 | 가부시키가이샤 니콘 | Light source optimizing method, exposure method, device manufacturing method, program, exposure apparatus, lithography system, light source evaluation method, and light source modulation method |
| US20110205519A1 (en) * | 2010-02-25 | 2011-08-25 | Nikon Corporation | Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method |
| DE102010029905A1 (en) | 2010-06-10 | 2011-12-15 | Carl Zeiss Smt Gmbh | Optical system of a microlithographic projection exposure apparatus |
| DE102010030089A1 (en) | 2010-06-15 | 2011-12-15 | Carl Zeiss Smt Gmbh | Illumination optics for micro lithography and projection exposure apparatus with such an illumination optics |
| JP2012004465A (en) | 2010-06-19 | 2012-01-05 | Nikon Corp | Illumination optical system, exposure equipment, and device manufacturing method |
| WO2012060083A1 (en) * | 2010-11-05 | 2012-05-10 | 株式会社ニコン | Illumination device, exposure device, program, and illumination method |
| JP5807761B2 (en) * | 2011-06-06 | 2015-11-10 | 株式会社ニコン | Illumination method, illumination optical apparatus, and exposure apparatus |
| WO2012169089A1 (en) * | 2011-06-07 | 2012-12-13 | 株式会社ニコン | Illumination optical system, exposure apparatus, device production method, and light polarization unit |
| TWI587002B (en) | 2011-06-13 | 2017-06-11 | 尼康股份有限公司 | Lighting method |
| DE102011079837A1 (en) | 2011-07-26 | 2013-01-31 | Carl Zeiss Smt Gmbh | Optical system for microlithographic projection exposure system for manufacturing e.g. LCDs, has beam-splitting optic element arranged such that degree of polarization of incident light beam is lesser than specified value |
| JP6137179B2 (en) | 2011-07-26 | 2017-05-31 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Optical system of microlithography projection exposure apparatus and microlithography exposure method |
| WO2013061858A1 (en) * | 2011-10-24 | 2013-05-02 | 株式会社ニコン | Illumination optical assembly, exposure apparatus, and device manufacturing method |
| US9732934B2 (en) | 2011-10-28 | 2017-08-15 | Nikon Corporation | Illumination device for optimizing polarization in an illumination pupil |
| EP2806262A4 (en) * | 2012-01-18 | 2015-09-23 | Nikon Corp | STRUCTURED LIGHTING DEVICE, LIGHTED MICROSCOPE STRUCTURED DEVICE, AND STRUCTURED LIGHTING METHOD |
| US9201008B2 (en) * | 2012-06-26 | 2015-12-01 | Universite Laval | Method and system for obtaining an extended-depth-of-field volumetric image using laser scanning imaging |
| WO2014077405A1 (en) * | 2012-11-19 | 2014-05-22 | 株式会社ニコン | Illumination optical system and illumination method, and exposure method and device |
| DE102012223217B9 (en) | 2012-12-14 | 2014-07-10 | Carl Zeiss Smt Gmbh | Optical system of a microlithographic projection exposure apparatus |
| CN107247388B (en) * | 2012-12-18 | 2018-09-18 | 株式会社尼康 | Exposure device, device inspection apparatus and device making method |
| DE102013214459B4 (en) | 2013-07-24 | 2015-07-16 | Carl Zeiss Smt Gmbh | Optical system for a microlithographic projection exposure apparatus |
| EP2876498B1 (en) * | 2013-11-22 | 2017-05-24 | Carl Zeiss SMT GmbH | Illumination system of a microlithographic projection exposure apparatus |
| GB2522082B (en) | 2014-03-14 | 2016-02-24 | Oclaro Technology Ltd | Optical component |
| NL2015160A (en) | 2014-07-28 | 2016-07-07 | Asml Netherlands Bv | Illumination system, inspection apparatus including such an illumination system, inspection method and manufacturing method. |
| DE102015202800A1 (en) * | 2015-02-17 | 2016-08-18 | Carl Zeiss Smt Gmbh | Assembly of an optical system, in particular a microlithographic projection exposure apparatus |
| JP2018518702A (en) * | 2015-05-13 | 2018-07-12 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Illumination system of a microlithographic projection apparatus and method for adjusting the illumination distribution in such a system |
| WO2017011188A1 (en) * | 2015-07-13 | 2017-01-19 | Applied Materials, Inc. | Quarter wave light splitting |
| KR102483322B1 (en) * | 2015-09-30 | 2022-12-30 | 삼성디스플레이 주식회사 | Polarization module and laser irradiation apparatus including the same |
| KR102128488B1 (en) * | 2015-12-09 | 2020-07-01 | 에이에스엠엘 홀딩 엔.브이. | Flexible illuminator |
| JP6816099B2 (en) * | 2016-02-26 | 2021-01-20 | ギガフォトン株式会社 | Beam transmission system, exposure equipment and illumination optics for exposure equipment |
| JP6662102B2 (en) * | 2016-02-29 | 2020-03-11 | 富士ゼロックス株式会社 | Optical device manufacturing method, substrate device, optical device, and optical device manufacturing device |
| DE102016204703B4 (en) | 2016-03-22 | 2022-08-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Device and method for generating an optical pattern from pixels in an image plane |
| KR102178588B1 (en) * | 2016-06-30 | 2020-11-16 | 에이에스엠엘 홀딩 엔.브이. | Device and method for pupil illumination in overlay and critical dimension sensors |
| JP6701136B2 (en) * | 2017-07-28 | 2020-05-27 | キヤノン株式会社 | Illumination optical system, exposure apparatus, and article manufacturing method |
| TWI667183B (en) * | 2017-08-03 | 2019-08-01 | 崴強科技股份有限公司 | Method of detecting feeding status and width of paper |
| US20190129308A1 (en) * | 2017-11-02 | 2019-05-02 | Taiwan Green Point Enterprises Co., Ltd. | Digital masking system, pattern imaging apparatus and digital masking method |
| EP3486706B1 (en) * | 2017-11-16 | 2024-05-08 | SD Optics, Inc. | Functional module and microscope equipped with the same |
| CN109521652B (en) * | 2018-12-11 | 2020-04-10 | 中国科学院光电技术研究所 | Super-resolution photoetching device based on prismatic table light splitting |
| DE102019201280A1 (en) * | 2019-01-31 | 2020-08-06 | Trumpf Laser Gmbh | Arrangement and method for shaping a laser beam |
| JP7341670B2 (en) * | 2019-02-15 | 2023-09-11 | キヤノン株式会社 | Imaging device, imaging device control method, program |
| CN111856745B (en) * | 2019-04-30 | 2023-03-17 | 上海微电子装备(集团)股份有限公司 | Light irradiation device |
| US11774785B2 (en) * | 2020-03-30 | 2023-10-03 | British Telecommunications Public Limited Company | Optical limiter and method for limiting radiant flux |
| TWI800063B (en) * | 2021-10-29 | 2023-04-21 | 佳世達科技股份有限公司 | Light source module |
| US20260005008A1 (en) * | 2024-07-01 | 2026-01-01 | Kla Corporation | Multi-spot laser-sustained plasma light source |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030123040A1 (en) * | 2001-11-07 | 2003-07-03 | Gilad Almogy | Optical spot grid array printer |
| US6900827B2 (en) * | 2001-10-19 | 2005-05-31 | Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center | Optical recorder and method thereof |
Family Cites Families (912)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3293882B2 (en) | 1992-03-27 | 2002-06-17 | 株式会社東芝 | Projection exposure equipment |
| JPS444993Y1 (en) | 1964-05-28 | 1969-02-24 | ||
| FR2450470A1 (en) | 1979-02-27 | 1980-09-26 | Thomson Csf | OPTICAL PROJECTION SYSTEM IN PHOTOREPETITION |
| JPS5857066B2 (en) | 1979-06-29 | 1983-12-17 | 古河電気工業株式会社 | linear motor |
| DE2963537D1 (en) | 1979-07-27 | 1982-10-07 | Tabarelli Werner W | Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer |
| FR2474708B1 (en) | 1980-01-24 | 1987-02-20 | Dme | HIGH-RESOLUTION MICROPHOTOLITHOGRAPHY PROCESS |
| US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| JPS57117238A (en) | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
| JPS57152129A (en) | 1981-03-13 | 1982-09-20 | Sanyo Electric Co Ltd | Developing method of resist |
| JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
| JPS5849932A (en) | 1981-09-21 | 1983-03-24 | Ushio Inc | Adjuster for illuminance distribution pattern |
| JPS5845502U (en) | 1981-09-21 | 1983-03-26 | 株式会社津山金属製作所 | wide angle reflector |
| JPS58115945A (en) | 1981-12-29 | 1983-07-09 | Toyoda Gosei Co Ltd | Power transmission and signal transmission and reception method to steering section |
| JPS58202448A (en) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | exposure equipment |
| DD206607A1 (en) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | METHOD AND DEVICE FOR ELIMINATING INTERFERENCE EFFECTS |
| JPS5919912A (en) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | Immersion distance holding device |
| DD242880A1 (en) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION |
| JPS59226317A (en) | 1983-06-06 | 1984-12-19 | Nippon Kogaku Kk <Nikon> | Illuminating device |
| DD221563A1 (en) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | IMMERSIONS OBJECTIVE FOR THE STEP-BY-STEP PROJECTION IMAGING OF A MASK STRUCTURE |
| JPS59155843A (en) | 1984-01-27 | 1984-09-05 | Hitachi Ltd | Exposing device |
| DD224448A1 (en) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION |
| JPS60229606A (en) | 1984-04-27 | 1985-11-15 | 株式会社日立製作所 | gas insulated switchgear |
| JPS6144429A (en) | 1984-08-09 | 1986-03-04 | Nippon Kogaku Kk <Nikon> | Alignment method |
| JPS6145923A (en) | 1984-08-10 | 1986-03-06 | Aronshiya:Kk | Manufacture of rotary disk for reflection type rotary encoder |
| JPH0682598B2 (en) | 1984-10-11 | 1994-10-19 | 日本電信電話株式会社 | Projection exposure device |
| JPS61217434A (en) | 1985-03-20 | 1986-09-27 | Mitsubishi Chem Ind Ltd | Conveying device |
| JPS6194342U (en) | 1984-11-27 | 1986-06-18 | ||
| JPS61156736A (en) | 1984-12-27 | 1986-07-16 | Canon Inc | exposure equipment |
| JPS61196532A (en) | 1985-02-26 | 1986-08-30 | Canon Inc | Exposure device |
| JPS61251025A (en) | 1985-04-30 | 1986-11-08 | Canon Inc | Projection exposing apparatus |
| JPS61270049A (en) | 1985-05-24 | 1986-11-29 | Toshiba Corp | Table device |
| JPS622540A (en) | 1985-06-28 | 1987-01-08 | Canon Inc | Light integrator and Koehler lighting system including it |
| JPS622539A (en) | 1985-06-28 | 1987-01-08 | Canon Inc | Illumination optical system |
| US4683420A (en) | 1985-07-10 | 1987-07-28 | Westinghouse Electric Corp. | Acousto-optic system for testing high speed circuits |
| JPS6217705A (en) | 1985-07-16 | 1987-01-26 | Nippon Kogaku Kk <Nikon> | Illumination device for telecentric optical system |
| JPS6265326A (en) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | Exposure device |
| JPS62100161A (en) | 1985-10-23 | 1987-05-09 | Shin Etsu Chem Co Ltd | Planar motor |
| JPS62120026A (en) | 1985-11-20 | 1987-06-01 | Fujitsu Ltd | X-ray exposing apparatus |
| JPS62121417A (en) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | Immersion objective lens device |
| JPH07105323B2 (en) | 1985-11-22 | 1995-11-13 | 株式会社日立製作所 | Exposure method |
| JPS62153710A (en) | 1985-12-27 | 1987-07-08 | Furukawa Alum Co Ltd | Preparation of reflective substrate for rotary encoder |
| JPH0782981B2 (en) | 1986-02-07 | 1995-09-06 | 株式会社ニコン | Projection exposure method and apparatus |
| JPS62188316A (en) | 1986-02-14 | 1987-08-17 | Canon Inc | Projection exposure device |
| JPS62203526A (en) | 1986-02-28 | 1987-09-08 | トヨタ自動車株式会社 | Radio power transmitter |
| JP2506616B2 (en) | 1986-07-02 | 1996-06-12 | キヤノン株式会社 | Exposure apparatus and circuit manufacturing method using the same |
| JPS6336526A (en) | 1986-07-30 | 1988-02-17 | Oki Electric Ind Co Ltd | Wafer exposure equipment |
| JPH0695511B2 (en) | 1986-09-17 | 1994-11-24 | 大日本スクリ−ン製造株式会社 | Washing and drying treatment method |
| JPS63128713A (en) | 1986-11-19 | 1988-06-01 | Matsushita Electric Ind Co Ltd | Correction of distortion in scanning aligner |
| JPS63131008A (en) | 1986-11-20 | 1988-06-03 | Fujitsu Ltd | Optical alignment method |
| JPS63141313A (en) | 1986-12-03 | 1988-06-13 | Hitachi Ltd | Thin plate deforming device |
| JPS63157419A (en) | 1986-12-22 | 1988-06-30 | Toshiba Corp | Fine pattern transfer apparatus |
| JPS63160192A (en) | 1986-12-23 | 1988-07-02 | 株式会社明電舎 | Connecting conductor of radio frequency heater |
| JPS63231217A (en) | 1987-03-19 | 1988-09-27 | Omron Tateisi Electronics Co | Measuring instrument for movement quantity |
| JPH0718699B2 (en) | 1987-05-08 | 1995-03-06 | 株式会社ニコン | Surface displacement detector |
| JPS6426704A (en) | 1987-05-11 | 1989-01-30 | Jiei Shirinian Jiyon | Pocket structure of garment |
| JPS63292005A (en) | 1987-05-25 | 1988-11-29 | Nikon Corp | Travel amount detection device with running error correction |
| JPH07117371B2 (en) | 1987-07-14 | 1995-12-18 | 株式会社ニコン | measuring device |
| JPS6468926A (en) | 1987-09-09 | 1989-03-15 | Nikon Corp | Measurement of image distortion in projection optical system |
| JPH0191419A (en) | 1987-10-01 | 1989-04-11 | Canon Inc | Aligner |
| JPH01115033A (en) | 1987-10-28 | 1989-05-08 | Hitachi Ltd | Gas discharge display device |
| JPH01147516A (en) | 1987-12-04 | 1989-06-09 | Canon Inc | Beam position controller |
| JPH01202833A (en) | 1988-02-09 | 1989-08-15 | Toshiba Corp | High precision XY stage device |
| JPH0831513B2 (en) | 1988-02-22 | 1996-03-27 | 株式会社ニコン | Substrate suction device |
| JPH0545102Y2 (en) | 1988-02-24 | 1993-11-17 | ||
| JPH01255404A (en) | 1988-04-05 | 1989-10-12 | Toshiba Corp | Electromagnet device for levitation |
| JPH01258990A (en) | 1988-04-08 | 1989-10-16 | Dainippon Printing Co Ltd | thermal transfer sheet |
| JPH01276043A (en) | 1988-04-28 | 1989-11-06 | Mitsubishi Cable Ind Ltd | Waveguide type liquid detector |
| JPH01278240A (en) | 1988-04-28 | 1989-11-08 | Tokyo Electron Ltd | Uninterruptible power source for apparatus for manufacture of semiconductor |
| JPH01286478A (en) | 1988-05-13 | 1989-11-17 | Hitachi Ltd | Beam uniformizing optical system and manufacture thereof |
| JPH01292343A (en) | 1988-05-19 | 1989-11-24 | Fujitsu Ltd | Pellicle |
| JPH01314247A (en) | 1988-06-13 | 1989-12-19 | Fuji Plant Kogyo Kk | Automatic exposing device for printed circuit board |
| JPH0831514B2 (en) | 1988-06-21 | 1996-03-27 | 株式会社ニコン | Substrate suction device |
| JPH0242382A (en) | 1988-08-02 | 1990-02-13 | Canon Inc | Moving stage structure |
| JPH0265149A (en) | 1988-08-30 | 1990-03-05 | Mitsubishi Electric Corp | Semiconductor device |
| JP2729058B2 (en) | 1988-08-31 | 1998-03-18 | 山形日本電気株式会社 | Exposure equipment for semiconductor devices |
| JPH0297239A (en) | 1988-09-30 | 1990-04-09 | Canon Inc | Power source equipment for aligner |
| JP2682067B2 (en) | 1988-10-17 | 1997-11-26 | 株式会社ニコン | Exposure apparatus and exposure method |
| JP2697014B2 (en) | 1988-10-26 | 1998-01-14 | 株式会社ニコン | Exposure apparatus and exposure method |
| JPH0636054B2 (en) | 1988-11-10 | 1994-05-11 | 株式会社東芝 | Fuel pellet manufacturing method |
| JPH02139146A (en) | 1988-11-15 | 1990-05-29 | Matsushita Electric Ind Co Ltd | Positioning table of one step six degrees of freedom |
| JP2940553B2 (en) | 1988-12-21 | 1999-08-25 | 株式会社ニコン | Exposure method |
| JPH07104442B2 (en) | 1989-04-06 | 1995-11-13 | 旭硝子株式会社 | Method for producing magnesium fluoride film and low reflection film |
| DE3907136A1 (en) | 1989-03-06 | 1990-09-13 | Jagenberg Ag | DEVICE FOR JOINING MATERIAL RAILS |
| JPH02261073A (en) | 1989-03-29 | 1990-10-23 | Sony Corp | Ultrasonic motor |
| JPH02287308A (en) | 1989-04-03 | 1990-11-27 | Mikhailovich Khodosovich Vladimir | Method for centering lenses in optical unit mount |
| JPH02285320A (en) | 1989-04-27 | 1990-11-22 | Olympus Optical Co Ltd | Stop device for endoscope |
| JP2527807B2 (en) * | 1989-05-09 | 1996-08-28 | 住友大阪セメント株式会社 | Optical associative identification device |
| JPH02298431A (en) | 1989-05-12 | 1990-12-10 | Mitsubishi Electric Corp | Electric discharge machining device |
| JPH02311237A (en) | 1989-05-25 | 1990-12-26 | Fuji Electric Co Ltd | Conveyance device |
| JPH0341399A (en) | 1989-07-10 | 1991-02-21 | Nikon Corp | Manufacture of multilayered film reflecting mirror |
| JPH0364811A (en) | 1989-07-31 | 1991-03-20 | Okazaki Seisakusho:Kk | Hollow core wire mi cable and manufacture thereof |
| JPH0372298A (en) | 1989-08-14 | 1991-03-27 | Nikon Corp | Manufacturing method of multilayer reflective mirror |
| JPH0394445A (en) | 1989-09-06 | 1991-04-19 | Mitsubishi Electric Corp | Semiconductor wafer transfer system |
| JPH03132663A (en) | 1989-10-18 | 1991-06-06 | Fujitsu Ltd | Pellicle |
| JPH03134341A (en) | 1989-10-20 | 1991-06-07 | Fuji Photo Film Co Ltd | Damper mechanism, vibrationproof mechanism and optical beam scanning device into which this damper mechanism, etc. are incorporated |
| JP3067142B2 (en) | 1989-11-28 | 2000-07-17 | 富士通株式会社 | Photomask inspection apparatus and photomask inspection method |
| JP2784225B2 (en) | 1989-11-28 | 1998-08-06 | 双葉電子工業株式会社 | Relative displacement measurement device |
| JPH03211812A (en) | 1990-01-17 | 1991-09-17 | Canon Inc | exposure equipment |
| JPH03263810A (en) | 1990-03-14 | 1991-11-25 | Sumitomo Heavy Ind Ltd | Vibration control method of semiconductor aligner |
| JPH0710897B2 (en) | 1990-04-27 | 1995-02-08 | 日本油脂株式会社 | Plastic lens |
| JPH0432154A (en) | 1990-05-25 | 1992-02-04 | Iwasaki Electric Co Ltd | Metal halide lamp device |
| US5153428A (en) * | 1990-06-15 | 1992-10-06 | Hamamatsu Photonics K.K. | Confocal laser scanning microscope having relay lens and a slit for removing stray light |
| JP2897355B2 (en) | 1990-07-05 | 1999-05-31 | 株式会社ニコン | Alignment method, exposure apparatus, and position detection method and apparatus |
| JP3077176B2 (en) | 1990-08-13 | 2000-08-14 | 株式会社ニコン | Exposure method, apparatus, and element manufacturing method |
| JP2995820B2 (en) | 1990-08-21 | 1999-12-27 | 株式会社ニコン | Exposure method and method, and device manufacturing method |
| JP3049774B2 (en) | 1990-12-27 | 2000-06-05 | 株式会社ニコン | Projection exposure apparatus and method, and element manufacturing method |
| JPH04130710A (en) | 1990-09-21 | 1992-05-01 | Hitachi Ltd | Apparatus for exposure of light |
| JP2548834B2 (en) | 1990-09-25 | 1996-10-30 | 三菱電機株式会社 | Electron beam dimension measuring device |
| JPH04133414A (en) | 1990-09-26 | 1992-05-07 | Nec Yamaguchi Ltd | Reduced projection and aligner |
| JPH04152512A (en) | 1990-10-16 | 1992-05-26 | Fujitsu Ltd | Wafer chuck |
| DE4033556A1 (en) | 1990-10-22 | 1992-04-23 | Suess Kg Karl | MEASURING ARRANGEMENT FOR X, Y, (PHI) COORDINATE TABLES |
| JPH04179115A (en) | 1990-11-08 | 1992-06-25 | Nec Kyushu Ltd | Contracted projection aligner |
| JP3094439B2 (en) | 1990-11-21 | 2000-10-03 | 株式会社ニコン | Exposure method |
| JPH0480052U (en) | 1990-11-27 | 1992-07-13 | ||
| JPH04235558A (en) | 1991-01-11 | 1992-08-24 | Toshiba Corp | Exposure device |
| JP3084760B2 (en) | 1991-02-28 | 2000-09-04 | 株式会社ニコン | Exposure method and exposure apparatus |
| JP3255168B2 (en) | 1991-02-28 | 2002-02-12 | 株式会社ニコン | Exposure method, device manufacturing method using the exposure method, and exposure apparatus |
| JP3084761B2 (en) | 1991-02-28 | 2000-09-04 | 株式会社ニコン | Exposure method and mask |
| JP2860174B2 (en) | 1991-03-05 | 1999-02-24 | 三菱電機株式会社 | Chemical vapor deposition equipment |
| JP3200894B2 (en) | 1991-03-05 | 2001-08-20 | 株式会社日立製作所 | Exposure method and apparatus |
| JPH04280619A (en) | 1991-03-08 | 1992-10-06 | Canon Inc | Wafer retaining method and retaining device |
| JPH04282539A (en) | 1991-03-11 | 1992-10-07 | Hitachi Ltd | Method for forming reflection-charge preventing film |
| JPH05259069A (en) | 1991-03-13 | 1993-10-08 | Tokyo Electron Ltd | Method of exposing periphery of wafer |
| JPH04211110A (en) | 1991-03-20 | 1992-08-03 | Hitachi Ltd | Projection aligner and aligning method |
| JPH04296092A (en) | 1991-03-26 | 1992-10-20 | Matsushita Electric Ind Co Ltd | Reflow device |
| JPH05275306A (en) * | 1991-03-29 | 1993-10-22 | Hoya Corp | Aligner and aligning method |
| JP2602345Y2 (en) | 1991-03-29 | 2000-01-11 | 京セラ株式会社 | Hydrostatic bearing device |
| US5251222A (en) * | 1991-04-01 | 1993-10-05 | Teledyne Industries, Inc. | Active multi-stage cavity sensor |
| JPH04305917A (en) | 1991-04-02 | 1992-10-28 | Nikon Corp | Adhesion type exposure device |
| JPH04305915A (en) | 1991-04-02 | 1992-10-28 | Nikon Corp | Adhesion type exposure device |
| JP3200874B2 (en) | 1991-07-10 | 2001-08-20 | 株式会社ニコン | Projection exposure equipment |
| JPH04330961A (en) | 1991-05-01 | 1992-11-18 | Matsushita Electron Corp | Development processing equipment |
| FR2676288B1 (en) | 1991-05-07 | 1994-06-17 | Thomson Csf | LIGHT COLLECTOR FOR PROJECTOR. |
| JPH04343307A (en) | 1991-05-20 | 1992-11-30 | Ricoh Co Ltd | Laser adjusting device |
| JP2884830B2 (en) | 1991-05-28 | 1999-04-19 | キヤノン株式会社 | Automatic focusing device |
| JPH0590128A (en) | 1991-06-13 | 1993-04-09 | Nikon Corp | Aligner |
| JPH0513292A (en) | 1991-07-02 | 1993-01-22 | Nikon Corp | Exposure equipment |
| JPH0545886A (en) | 1991-08-12 | 1993-02-26 | Nikon Corp | Square substrate exposure system |
| JPH0562877A (en) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | Optical system for lsi manufacturing contraction projection aligner by light |
| JPH05100553A (en) * | 1991-10-11 | 1993-04-23 | Sharp Corp | Screen device for electrophotographic device |
| JPH05109601A (en) | 1991-10-15 | 1993-04-30 | Nikon Corp | Aligner and exposure method |
| JPH05129184A (en) | 1991-10-30 | 1993-05-25 | Canon Inc | Projection exposure device |
| JPH05127086A (en) | 1991-11-01 | 1993-05-25 | Matsushita Electric Ind Co Ltd | Method for uniformizing light intensity and exposure device using the same |
| JP3203719B2 (en) | 1991-12-26 | 2001-08-27 | 株式会社ニコン | Exposure apparatus, device manufactured by the exposure apparatus, exposure method, and device manufacturing method using the exposure method |
| JPH05199680A (en) | 1992-01-17 | 1993-08-06 | Honda Motor Co Ltd | Power supply |
| US5229872A (en) * | 1992-01-21 | 1993-07-20 | Hughes Aircraft Company | Exposure device including an electrically aligned electronic mask for micropatterning |
| JPH0794969B2 (en) | 1992-01-29 | 1995-10-11 | 株式会社ソルテック | Positioning method and device thereof |
| JP3194155B2 (en) | 1992-01-31 | 2001-07-30 | キヤノン株式会社 | Semiconductor device manufacturing method and projection exposure apparatus using the same |
| JPH05217837A (en) | 1992-02-04 | 1993-08-27 | Toshiba Corp | X-y movable table |
| JP3153372B2 (en) | 1992-02-26 | 2001-04-09 | 東京エレクトロン株式会社 | Substrate processing equipment |
| JPH05241324A (en) | 1992-02-26 | 1993-09-21 | Nikon Corp | Photomask and exposure method |
| JPH05243364A (en) | 1992-03-02 | 1993-09-21 | Hitachi Ltd | Method of destaticizing semiconductor wafer and semiconductor integrated circuit manufacturing apparatus using the same |
| JP3278896B2 (en) | 1992-03-31 | 2002-04-30 | キヤノン株式会社 | Illumination apparatus and projection exposure apparatus using the same |
| US5312513A (en) * | 1992-04-03 | 1994-05-17 | Texas Instruments Incorporated | Methods of forming multiple phase light modulators |
| JPH05304072A (en) | 1992-04-08 | 1993-11-16 | Nec Corp | Manufacture of semiconductor device |
| JP3242693B2 (en) | 1992-05-15 | 2001-12-25 | 富士通株式会社 | Pellicle sticking device |
| JP2673130B2 (en) | 1992-05-20 | 1997-11-05 | 株式会社キトー | Suspension support device for traveling rail |
| JPH0629204A (en) | 1992-07-08 | 1994-02-04 | Fujitsu Ltd | Method and apparatus for development of resist |
| JP3246615B2 (en) | 1992-07-27 | 2002-01-15 | 株式会社ニコン | Illumination optical device, exposure apparatus, and exposure method |
| JPH06188169A (en) | 1992-08-24 | 1994-07-08 | Canon Inc | Imaging method, exposure apparatus using the method, and device manufacturing method using the method |
| JPH07318847A (en) | 1994-05-26 | 1995-12-08 | Nikon Corp | Lighting optics |
| JPH06104167A (en) | 1992-09-18 | 1994-04-15 | Hitachi Ltd | Exposure apparatus and semiconductor device manufacturing method |
| JP2884947B2 (en) | 1992-10-01 | 1999-04-19 | 株式会社ニコン | Projection exposure apparatus, exposure method, and method of manufacturing semiconductor integrated circuit |
| JPH06124873A (en) | 1992-10-09 | 1994-05-06 | Canon Inc | Immersion projection exposure system |
| JP2724787B2 (en) | 1992-10-09 | 1998-03-09 | キヤノン株式会社 | Positioning device |
| JPH06124872A (en) | 1992-10-14 | 1994-05-06 | Canon Inc | Image forming method and manufacture of semiconductor device using the method |
| JP3322274B2 (en) | 1992-10-29 | 2002-09-09 | 株式会社ニコン | Projection exposure method and projection exposure apparatus |
| JPH06148399A (en) | 1992-11-05 | 1994-05-27 | Nikon Corp | Multilayer mirror for X-ray and X-ray microscope |
| JPH06163350A (en) | 1992-11-19 | 1994-06-10 | Matsushita Electron Corp | Projection exposure method and device thereof |
| US5383000A (en) | 1992-11-24 | 1995-01-17 | General Signal Corporation | Partial coherence varier for microlithographic system |
| JP2753930B2 (en) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | Immersion type projection exposure equipment |
| JPH06177007A (en) | 1992-12-01 | 1994-06-24 | Nippon Telegr & Teleph Corp <Ntt> | Projection exposure device |
| JPH06181157A (en) | 1992-12-15 | 1994-06-28 | Nikon Corp | Low dust generation device |
| JPH06186025A (en) | 1992-12-16 | 1994-07-08 | Yunisun:Kk | Three dimensional measuring device |
| JP2520833B2 (en) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | Immersion type liquid treatment device |
| JP3201027B2 (en) | 1992-12-22 | 2001-08-20 | 株式会社ニコン | Projection exposure apparatus and method |
| JP3316833B2 (en) | 1993-03-26 | 2002-08-19 | 株式会社ニコン | Scanning exposure method, surface position setting device, scanning type exposure device, and device manufacturing method using the method |
| JPH06204121A (en) * | 1992-12-28 | 1994-07-22 | Canon Inc | Illuminator and projection aligner using the same |
| JP2765422B2 (en) | 1992-12-28 | 1998-06-18 | キヤノン株式会社 | Exposure apparatus and method for manufacturing semiconductor device using the same |
| JP2786070B2 (en) | 1993-01-29 | 1998-08-13 | セントラル硝子株式会社 | Inspection method and apparatus for transparent plate |
| JPH07245258A (en) | 1994-03-08 | 1995-09-19 | Nikon Corp | Exposure method and exposure apparatus |
| JPH06241720A (en) | 1993-02-18 | 1994-09-02 | Sony Corp | Displacement amount measuring method and displacement meter |
| JPH06244082A (en) | 1993-02-19 | 1994-09-02 | Nikon Corp | Projection exposure device |
| JP3412704B2 (en) | 1993-02-26 | 2003-06-03 | 株式会社ニコン | Projection exposure method and apparatus, and exposure apparatus |
| JP3747958B2 (en) | 1995-04-07 | 2006-02-22 | 株式会社ニコン | Catadioptric optics |
| JP3291818B2 (en) | 1993-03-16 | 2002-06-17 | 株式会社ニコン | Projection exposure apparatus and semiconductor integrated circuit manufacturing method using the apparatus |
| JP3537843B2 (en) | 1993-03-19 | 2004-06-14 | 株式会社テクノ菱和 | Clean room ionizer |
| US5461410A (en) * | 1993-03-29 | 1995-10-24 | Texas Instruments Incorporated | Gray scale printing using spatial light modulators |
| JPH0777191B2 (en) | 1993-04-06 | 1995-08-16 | 日本電気株式会社 | Exposure light projection device |
| US5815248A (en) * | 1993-04-22 | 1998-09-29 | Nikon Corporation | Illumination optical apparatus and method having a wavefront splitter and an optical integrator |
| JP3309871B2 (en) | 1993-04-27 | 2002-07-29 | 株式会社ニコン | Projection exposure method and apparatus, and element manufacturing method |
| JPH06326174A (en) | 1993-05-12 | 1994-11-25 | Hitachi Ltd | Wafer vacuum suction device |
| JP3265503B2 (en) | 1993-06-11 | 2002-03-11 | 株式会社ニコン | Exposure method and apparatus |
| JP3844787B2 (en) | 1993-09-02 | 2006-11-15 | 日産化学工業株式会社 | Magnesium fluoride hydrate sol and its production method |
| JP3359123B2 (en) | 1993-09-20 | 2002-12-24 | キヤノン株式会社 | Aberration correction optical system |
| JP3099933B2 (en) * | 1993-12-28 | 2000-10-16 | 株式会社東芝 | Exposure method and exposure apparatus |
| JPH07122469A (en) | 1993-10-20 | 1995-05-12 | Nikon Corp | Projection exposure device |
| JP3376045B2 (en) | 1993-11-09 | 2003-02-10 | キヤノン株式会社 | Scanning exposure apparatus and device manufacturing method using the scanning exposure apparatus |
| JPH07134955A (en) | 1993-11-11 | 1995-05-23 | Hitachi Ltd | Display device and its reflectance adjustment method |
| JP3339144B2 (en) | 1993-11-11 | 2002-10-28 | 株式会社ニコン | Scanning exposure apparatus and exposure method |
| JP3278303B2 (en) | 1993-11-12 | 2002-04-30 | キヤノン株式会社 | Scanning exposure apparatus and device manufacturing method using the scanning exposure apparatus |
| JPH07147223A (en) | 1993-11-26 | 1995-06-06 | Hitachi Ltd | Pattern formation method |
| EP1209508B1 (en) | 1993-12-01 | 2004-10-27 | Sharp Kabushiki Kaisha | Display for 3D images |
| JPH07161613A (en) * | 1993-12-08 | 1995-06-23 | Nikon Corp | Projection exposure device |
| JPH07167998A (en) | 1993-12-15 | 1995-07-04 | Nikon Corp | Target for laser plasma X-ray source |
| JP3487517B2 (en) | 1993-12-16 | 2004-01-19 | 株式会社リコー | Reciprocating device |
| JP3508190B2 (en) | 1993-12-21 | 2004-03-22 | セイコーエプソン株式会社 | Lighting device and projection display device |
| JPH07183201A (en) | 1993-12-21 | 1995-07-21 | Nec Corp | Exposure device and method therefor |
| JPH07190741A (en) | 1993-12-27 | 1995-07-28 | Nippon Telegr & Teleph Corp <Ntt> | Measurement error correction method |
| JPH07220989A (en) | 1994-01-27 | 1995-08-18 | Canon Inc | Exposure apparatus and device manufacturing method using the same |
| JPH07220990A (en) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | Pattern forming method and exposure apparatus thereof |
| JP2715895B2 (en) | 1994-01-31 | 1998-02-18 | 日本電気株式会社 | Light intensity distribution simulation method |
| JP3372633B2 (en) | 1994-02-04 | 2003-02-04 | キヤノン株式会社 | Positioning method and positioning apparatus using the same |
| JP2836483B2 (en) | 1994-05-13 | 1998-12-14 | 日本電気株式会社 | Illumination optics |
| JPH07239212A (en) | 1994-02-28 | 1995-09-12 | Nikon Corp | Position detector |
| JPH07243814A (en) | 1994-03-03 | 1995-09-19 | Fujitsu Ltd | Line width measurement method |
| JPH07263315A (en) | 1994-03-25 | 1995-10-13 | Toshiba Corp | Projection exposure device |
| US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
| US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
| JPH07283119A (en) | 1994-04-14 | 1995-10-27 | Hitachi Ltd | Exposure apparatus and exposure method |
| JP3193567B2 (en) | 1994-04-27 | 2001-07-30 | キヤノン株式会社 | Substrate storage container |
| JP3555230B2 (en) | 1994-05-18 | 2004-08-18 | 株式会社ニコン | Projection exposure equipment |
| JPH07335748A (en) | 1994-06-07 | 1995-12-22 | Miyazaki Oki Electric Co Ltd | Manufacture of semiconductor element |
| EP0687956B2 (en) * | 1994-06-17 | 2005-11-23 | Carl Zeiss SMT AG | Illumination device |
| JP3800616B2 (en) | 1994-06-27 | 2006-07-26 | 株式会社ニコン | Target moving device, positioning device, and movable stage device |
| JP3090577B2 (en) | 1994-06-29 | 2000-09-25 | 浜松ホトニクス株式会社 | Conductor layer removal method and system |
| JP3205663B2 (en) | 1994-06-29 | 2001-09-04 | 日本電子株式会社 | Charged particle beam equipment |
| JPH0822948A (en) | 1994-07-08 | 1996-01-23 | Nikon Corp | Scanning exposure device |
| JP3205468B2 (en) | 1994-07-25 | 2001-09-04 | 株式会社日立製作所 | Processing apparatus and exposure apparatus having wafer chuck |
| JPH0846751A (en) | 1994-07-29 | 1996-02-16 | Sanyo Electric Co Ltd | Illumination optical system |
| JP3613288B2 (en) | 1994-10-18 | 2005-01-26 | 株式会社ニコン | Cleaning device for exposure apparatus |
| JPH08136475A (en) | 1994-11-14 | 1996-05-31 | Kawasaki Steel Corp | Plate material surface observation device |
| JPH08151220A (en) | 1994-11-28 | 1996-06-11 | Nippon Sekiei Glass Kk | Method for molding quartz glass |
| JPH08162397A (en) | 1994-11-30 | 1996-06-21 | Canon Inc | Projection exposure apparatus and semiconductor device manufacturing method using the same |
| JPH08171054A (en) | 1994-12-16 | 1996-07-02 | Nikon Corp | Catadioptric system |
| JPH08195375A (en) | 1995-01-17 | 1996-07-30 | Sony Corp | Rotary drying method and rotary drying device |
| JPH08203803A (en) | 1995-01-24 | 1996-08-09 | Nikon Corp | Exposure equipment |
| JP3521544B2 (en) | 1995-05-24 | 2004-04-19 | 株式会社ニコン | Exposure equipment |
| JP3312164B2 (en) | 1995-04-07 | 2002-08-05 | 日本電信電話株式会社 | Vacuum suction device |
| JPH08297699A (en) | 1995-04-26 | 1996-11-12 | Hitachi Ltd | Manufacturing defect analysis support system, manufacturing system, and manufacturing defect analysis support method |
| JPH08313842A (en) | 1995-05-15 | 1996-11-29 | Nikon Corp | Illumination optical system and exposure apparatus including the optical system |
| JPH08316125A (en) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | Projection exposure method and exposure apparatus |
| US5680588A (en) | 1995-06-06 | 1997-10-21 | International Business Machines Corporation | Method and system for optimizing illumination in an optical photolithography projection imaging system |
| JP3531297B2 (en) | 1995-06-19 | 2004-05-24 | 株式会社ニコン | Projection exposure apparatus and projection exposure method |
| JP3561556B2 (en) | 1995-06-29 | 2004-09-02 | 株式会社ルネサステクノロジ | Manufacturing method of mask |
| JP3637639B2 (en) | 1995-07-10 | 2005-04-13 | 株式会社ニコン | Exposure equipment |
| JPH09108551A (en) | 1995-08-11 | 1997-04-28 | Mitsubishi Rayon Co Ltd | Water purifier |
| JPH0961686A (en) | 1995-08-23 | 1997-03-07 | Nikon Corp | Plastic lens |
| JPH0982626A (en) | 1995-09-12 | 1997-03-28 | Nikon Corp | Projection exposure device |
| JP3487527B2 (en) | 1995-09-14 | 2004-01-19 | 株式会社東芝 | Light refraction device |
| US5815247A (en) | 1995-09-21 | 1998-09-29 | Siemens Aktiengesellschaft | Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures |
| JPH0992593A (en) | 1995-09-21 | 1997-04-04 | Nikon Corp | Projection exposure device |
| DE19535392A1 (en) | 1995-09-23 | 1997-03-27 | Zeiss Carl Fa | Radial polarization-rotating optical arrangement and microlithography projection exposure system with it |
| KR100505202B1 (en) | 1995-09-27 | 2005-11-25 | 칼 짜이스 에스엠테 아게 | Zoom device |
| JP3433403B2 (en) | 1995-10-16 | 2003-08-04 | 三星電子株式会社 | Stepper interface device |
| FR2740554A1 (en) | 1995-10-31 | 1997-04-30 | Philips Electronique Lab | SYSTEM FOR MONITORING THE DISCHARGE PHASE OF THE CHARGING-DISCHARGE CYCLES OF A RECHARGEABLE BATTERY, AND HOST DEVICE PROVIDED WITH AN INTELLIGENT BATTERY |
| JPH09134870A (en) | 1995-11-10 | 1997-05-20 | Hitachi Ltd | Pattern forming method and forming apparatus |
| JPH09148406A (en) | 1995-11-24 | 1997-06-06 | Dainippon Screen Mfg Co Ltd | Substrate carrying apparatus |
| JPH09151658A (en) | 1995-11-30 | 1997-06-10 | Nichibei Co Ltd | Runner connection device for mobile partition wall |
| JPH09160004A (en) | 1995-12-01 | 1997-06-20 | Denso Corp | Liquid crystal cell and its empty cell |
| JP3406957B2 (en) | 1995-12-06 | 2003-05-19 | キヤノン株式会社 | Optical element and exposure apparatus using the same |
| JPH09162106A (en) | 1995-12-11 | 1997-06-20 | Nikon Corp | Scanning exposure equipment |
| JPH09178415A (en) | 1995-12-25 | 1997-07-11 | Nikon Corp | Light wave interferometer |
| JPH09184787A (en) | 1995-12-28 | 1997-07-15 | Olympus Optical Co Ltd | Analysis/evaluation device for optical lens |
| JP3232473B2 (en) | 1996-01-10 | 2001-11-26 | キヤノン株式会社 | Projection exposure apparatus and device manufacturing method using the same |
| JP3189661B2 (en) | 1996-02-05 | 2001-07-16 | ウシオ電機株式会社 | Light source device |
| JP3576685B2 (en) | 1996-02-07 | 2004-10-13 | キヤノン株式会社 | Exposure apparatus and device manufacturing method using the same |
| JPH09227294A (en) | 1996-02-26 | 1997-09-02 | Toyo Commun Equip Co Ltd | Production of artificial quartz crystal |
| JPH09232213A (en) | 1996-02-26 | 1997-09-05 | Nikon Corp | Projection exposure equipment |
| JP3782151B2 (en) | 1996-03-06 | 2006-06-07 | キヤノン株式会社 | Gas supply device for excimer laser oscillator |
| JPH09243892A (en) | 1996-03-06 | 1997-09-19 | Matsushita Electric Ind Co Ltd | Optical element |
| JPH09281077A (en) | 1996-04-16 | 1997-10-31 | Hitachi Ltd | Capillary electrophoresis device |
| RU2084941C1 (en) | 1996-05-06 | 1997-07-20 | Йелстаун Корпорейшн Н.В. | Adaptive optical module |
| JP2691341B2 (en) | 1996-05-27 | 1997-12-17 | 株式会社ニコン | Projection exposure equipment |
| JPH09326338A (en) | 1996-06-04 | 1997-12-16 | Nikon Corp | Manufacturing control device |
| JPH09325255A (en) | 1996-06-06 | 1997-12-16 | Olympus Optical Co Ltd | Electronic camera |
| JPH103039A (en) | 1996-06-14 | 1998-01-06 | Nikon Corp | Catoptric system |
| JPH102865A (en) | 1996-06-18 | 1998-01-06 | Nikon Corp | Reticle inspection apparatus and inspection method |
| JPH1020195A (en) | 1996-06-28 | 1998-01-23 | Nikon Corp | Catoptric system |
| JPH1032160A (en) | 1996-07-17 | 1998-02-03 | Toshiba Corp | Pattern exposure method and exposure apparatus |
| JP3646415B2 (en) | 1996-07-18 | 2005-05-11 | ソニー株式会社 | Mask defect detection method |
| JPH1038517A (en) | 1996-07-23 | 1998-02-13 | Canon Inc | Optical displacement measuring device |
| JPH1079337A (en) | 1996-09-04 | 1998-03-24 | Nikon Corp | Projection exposure equipment |
| JP3646757B2 (en) | 1996-08-22 | 2005-05-11 | 株式会社ニコン | Projection exposure method and apparatus |
| JPH1055713A (en) | 1996-08-08 | 1998-02-24 | Ushio Inc | UV irradiation device |
| JPH1062305A (en) | 1996-08-19 | 1998-03-06 | Advantest Corp | Sensitivity correcting method of ccd camera, and lcd panel display test system with ccd camera sensitivity correcting function |
| JPH1082611A (en) | 1996-09-10 | 1998-03-31 | Nikon Corp | Surface position detection device |
| JPH1092735A (en) | 1996-09-13 | 1998-04-10 | Nikon Corp | Exposure equipment |
| JP2914315B2 (en) | 1996-09-20 | 1999-06-28 | 日本電気株式会社 | Scanning reduction projection exposure apparatus and distortion measuring method |
| JPH10104427A (en) | 1996-10-03 | 1998-04-24 | Sankyo Seiki Mfg Co Ltd | Wavelength plate, and optical pickup unit equipped with the same |
| JPH10116760A (en) | 1996-10-08 | 1998-05-06 | Nikon Corp | Exposure device and substrate holding device |
| JPH10116778A (en) | 1996-10-09 | 1998-05-06 | Canon Inc | Scan exposure equipment |
| JPH10116779A (en) | 1996-10-11 | 1998-05-06 | Nikon Corp | Stage equipment |
| JP3955985B2 (en) | 1996-10-16 | 2007-08-08 | 株式会社ニコン | Mark position detection apparatus and method |
| KR100191329B1 (en) | 1996-10-23 | 1999-06-15 | 윤종용 | Method and apparatus for distance education on the Internet. |
| JPH10135099A (en) | 1996-10-25 | 1998-05-22 | Sony Corp | Exposure apparatus and exposure method |
| JP3991166B2 (en) | 1996-10-25 | 2007-10-17 | 株式会社ニコン | Illumination optical apparatus and exposure apparatus provided with the illumination optical apparatus |
| JP4029182B2 (en) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | Exposure method |
| SG88823A1 (en) | 1996-11-28 | 2002-05-21 | Nikon Corp | Projection exposure apparatus |
| JP4029183B2 (en) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | Projection exposure apparatus and projection exposure method |
| JP3624065B2 (en) | 1996-11-29 | 2005-02-23 | キヤノン株式会社 | Substrate transport apparatus, semiconductor manufacturing apparatus, and exposure apparatus |
| JPH10169249A (en) | 1996-12-12 | 1998-06-23 | Ohbayashi Corp | Base isolating structure |
| JPH10189700A (en) | 1996-12-20 | 1998-07-21 | Sony Corp | Wafer holding mechanism |
| JP2910716B2 (en) | 1997-01-16 | 1999-06-23 | 日本電気株式会社 | Parametric analysis method of light intensity calculation |
| JPH10206714A (en) | 1997-01-20 | 1998-08-07 | Canon Inc | Lens moving device |
| JP2926325B2 (en) | 1997-01-23 | 1999-07-28 | 株式会社ニコン | Scanning exposure method |
| JPH10209018A (en) | 1997-01-24 | 1998-08-07 | Nippon Telegr & Teleph Corp <Ntt> | X-ray mask frame and method of holding X-ray mask |
| JP3612920B2 (en) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | Exposure apparatus for producing an optical recording medium master |
| JPH10255319A (en) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | Master exposure apparatus and method |
| JPH10294268A (en) | 1997-04-16 | 1998-11-04 | Nikon Corp | Projection exposure apparatus and alignment method |
| JP3747566B2 (en) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | Immersion exposure equipment |
| JPH118194A (en) | 1997-04-25 | 1999-01-12 | Nikon Corp | Exposure condition measurement method, projection optical system evaluation method, and lithography system |
| JP3817836B2 (en) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | EXPOSURE APPARATUS, ITS MANUFACTURING METHOD, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD |
| JPH113856A (en) | 1997-06-11 | 1999-01-06 | Canon Inc | Projection exposure method and projection exposure apparatus |
| JPH113849A (en) | 1997-06-12 | 1999-01-06 | Sony Corp | Variable deformation illumination filter and semiconductor exposure apparatus |
| JP3233341B2 (en) | 1997-06-12 | 2001-11-26 | 船井電機株式会社 | Bread maker and recording medium used therein |
| JPH1114876A (en) | 1997-06-19 | 1999-01-22 | Nikon Corp | Optical structure, projection exposure optical system incorporating the optical structure, and projection exposure apparatus |
| JPH1116816A (en) | 1997-06-25 | 1999-01-22 | Nikon Corp | Projection exposure apparatus, exposure method using the apparatus, and method for manufacturing circuit device using the apparatus |
| JPH1140657A (en) | 1997-07-23 | 1999-02-12 | Nikon Corp | Sample holding device and scanning exposure device |
| JP3264224B2 (en) | 1997-08-04 | 2002-03-11 | キヤノン株式会社 | Illumination apparatus and projection exposure apparatus using the same |
| JP3413074B2 (en) | 1997-08-29 | 2003-06-03 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| JPH1187237A (en) | 1997-09-10 | 1999-03-30 | Nikon Corp | Alignment device |
| JP4164905B2 (en) | 1997-09-25 | 2008-10-15 | 株式会社ニコン | Electromagnetic force motor, stage apparatus and exposure apparatus |
| JP2000106340A (en) | 1997-09-26 | 2000-04-11 | Nikon Corp | Exposure apparatus, scanning exposure method, and stage apparatus |
| JPH11111819A (en) | 1997-09-30 | 1999-04-23 | Asahi Kasei Micro Syst Co Ltd | Wafer fixing method and light exposing device |
| JPH11111818A (en) | 1997-10-03 | 1999-04-23 | Oki Electric Ind Co Ltd | Holding device and holder for wafer |
| JPH11111601A (en) | 1997-10-06 | 1999-04-23 | Nikon Corp | Exposure method and apparatus |
| JPH11195602A (en) | 1997-10-07 | 1999-07-21 | Nikon Corp | Projection exposure method and apparatus |
| JP3097620B2 (en) | 1997-10-09 | 2000-10-10 | 日本電気株式会社 | Scanning reduction projection exposure equipment |
| JP4210871B2 (en) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | Exposure equipment |
| JPH11142556A (en) | 1997-11-13 | 1999-05-28 | Nikon Corp | Stage control method, stage apparatus, and exposure apparatus having the apparatus |
| JPH11150062A (en) | 1997-11-14 | 1999-06-02 | Nikon Corp | Vibration isolation apparatus, exposure apparatus and vibration isolation method for vibration isolation table |
| WO1999027568A1 (en) | 1997-11-21 | 1999-06-03 | Nikon Corporation | Projection aligner and projection exposure method |
| JPH11283903A (en) | 1998-03-30 | 1999-10-15 | Nikon Corp | Projection optical system inspection apparatus and projection exposure apparatus having the same |
| JPH11162831A (en) | 1997-11-21 | 1999-06-18 | Nikon Corp | Projection exposure apparatus and projection exposure method |
| JPH11163103A (en) | 1997-11-25 | 1999-06-18 | Hitachi Ltd | Semiconductor device manufacturing method and manufacturing apparatus |
| JPH11159571A (en) | 1997-11-28 | 1999-06-15 | Nikon Corp | Mechanical device, exposure apparatus, and method of operating exposure apparatus |
| JPH11166990A (en) | 1997-12-04 | 1999-06-22 | Nikon Corp | Stage apparatus, exposure apparatus, and scanning exposure apparatus |
| JPH11176727A (en) | 1997-12-11 | 1999-07-02 | Nikon Corp | Projection exposure equipment |
| JP3673633B2 (en) | 1997-12-16 | 2005-07-20 | キヤノン株式会社 | Assembling and adjusting method of projection optical system |
| AU1504799A (en) | 1997-12-16 | 1999-07-05 | Nikon Corporation | Aligner, exposure method and method of manufacturing device |
| TW449672B (en) | 1997-12-25 | 2001-08-11 | Nippon Kogaku Kk | Process and apparatus for manufacturing photomask and method of manufacturing the same |
| JPH11204390A (en) | 1998-01-14 | 1999-07-30 | Canon Inc | Semiconductor manufacturing apparatus and device manufacturing method |
| JPH11219882A (en) | 1998-02-02 | 1999-08-10 | Nikon Corp | Stage and exposure equipment |
| JP3820728B2 (en) | 1998-02-04 | 2006-09-13 | 東レ株式会社 | Substrate measuring device |
| JPH11288879A (en) | 1998-02-04 | 1999-10-19 | Hitachi Ltd | Exposure condition determining method, apparatus therefor, and method of manufacturing semiconductor device |
| JPH11233434A (en) | 1998-02-17 | 1999-08-27 | Nikon Corp | Exposure condition determination method, exposure method, exposure apparatus, and device manufacturing method |
| JP4207240B2 (en) | 1998-02-20 | 2009-01-14 | 株式会社ニコン | Illuminometer for exposure apparatus, lithography system, illuminometer calibration method, and microdevice manufacturing method |
| JPH11239758A (en) | 1998-02-26 | 1999-09-07 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment |
| SE9800665D0 (en) * | 1998-03-02 | 1998-03-02 | Micronic Laser Systems Ab | Improved method for projection printing using a micromirror SLM |
| JPH11260791A (en) | 1998-03-10 | 1999-09-24 | Toshiba Mach Co Ltd | Drying method of semiconductor wafer and drying equipment |
| JPH11260686A (en) | 1998-03-11 | 1999-09-24 | Toshiba Corp | Exposure method |
| JPH11264756A (en) | 1998-03-18 | 1999-09-28 | Tokyo Electron Ltd | Liquid level detector, liquid level detection method, and substrate processing apparatus |
| AU2747899A (en) | 1998-03-20 | 1999-10-18 | Nikon Corporation | Photomask and projection exposure system |
| WO1999049504A1 (en) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Projection exposure method and system |
| KR20010042133A (en) | 1998-03-26 | 2001-05-25 | 오노 시게오 | Exposure method and system, photomask, method of manufacturing photomask, micro-device and method of manufacturing micro-device |
| JPH11307610A (en) | 1998-04-22 | 1999-11-05 | Nikon Corp | Substrate transfer device and exposure device |
| JPH11312631A (en) | 1998-04-27 | 1999-11-09 | Nikon Corp | Illumination optical device and exposure device |
| JP4090115B2 (en) | 1998-06-09 | 2008-05-28 | 信越ポリマー株式会社 | Substrate storage container |
| WO1999066370A1 (en) | 1998-06-17 | 1999-12-23 | Nikon Corporation | Method for producing mask |
| JP2000012453A (en) | 1998-06-18 | 2000-01-14 | Nikon Corp | Exposure apparatus, method of using the same, exposure method, and method of manufacturing mask |
| JP2000021748A (en) | 1998-06-30 | 2000-01-21 | Canon Inc | Exposure method and exposure apparatus |
| JP2000021742A (en) | 1998-06-30 | 2000-01-21 | Canon Inc | Exposure method and exposure apparatus |
| DE19829612A1 (en) | 1998-07-02 | 2000-01-05 | Zeiss Carl Fa | Microlithography lighting system with depolarizer |
| JP2000032403A (en) | 1998-07-14 | 2000-01-28 | Sony Corp | Data transmission method, data transmission device and reception device |
| JP2000029202A (en) | 1998-07-15 | 2000-01-28 | Nikon Corp | Manufacturing method of mask |
| JP2000036449A (en) | 1998-07-17 | 2000-02-02 | Nikon Corp | Exposure equipment |
| JP2000058436A (en) | 1998-08-11 | 2000-02-25 | Nikon Corp | Projection exposure apparatus and exposure method |
| AU4930099A (en) | 1998-08-18 | 2000-03-14 | Nikon Corporation | Illuminator and projection exposure apparatus |
| JP2000081320A (en) | 1998-09-03 | 2000-03-21 | Canon Inc | Surface position detecting apparatus and device manufacturing method using the same |
| JP2000092815A (en) | 1998-09-10 | 2000-03-31 | Canon Inc | Stage apparatus and exposure apparatus using the stage apparatus |
| JP4132397B2 (en) | 1998-09-16 | 2008-08-13 | 積水化学工業株式会社 | Photocurable resin composition, liquid crystal inlet sealing agent and liquid crystal display cell |
| JP2000097616A (en) | 1998-09-22 | 2000-04-07 | Nikon Corp | Interferometer |
| JP4065923B2 (en) | 1998-09-29 | 2008-03-26 | 株式会社ニコン | Illumination apparatus, projection exposure apparatus including the illumination apparatus, projection exposure method using the illumination apparatus, and adjustment method of the projection exposure apparatus |
| JP2000121498A (en) | 1998-10-15 | 2000-04-28 | Nikon Corp | Method and apparatus for evaluating imaging performance |
| JP2000121491A (en) | 1998-10-20 | 2000-04-28 | Nikon Corp | Evaluation method of optical system |
| US6466304B1 (en) | 1998-10-22 | 2002-10-15 | Asm Lithography B.V. | Illumination device for projection system and method for fabricating |
| JP2001176766A (en) | 1998-10-29 | 2001-06-29 | Nikon Corp | Illumination device and projection exposure device |
| JP2000147346A (en) | 1998-11-09 | 2000-05-26 | Toshiba Corp | Mounting mechanism for molded lenses |
| JP2000180371A (en) | 1998-12-11 | 2000-06-30 | Sharp Corp | Foreign matter inspection equipment and semiconductor processing equipment |
| US6406148B1 (en) * | 1998-12-31 | 2002-06-18 | Texas Instruments Incorporated | Electronic color switching in field sequential video displays |
| JP4146952B2 (en) | 1999-01-11 | 2008-09-10 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| JP2000208407A (en) | 1999-01-19 | 2000-07-28 | Nikon Corp | Exposure equipment |
| JPH1198U (en) | 1999-02-08 | 1999-07-21 | 株式会社ニコン | Pellicle frame |
| JP2000243684A (en) | 1999-02-18 | 2000-09-08 | Canon Inc | Exposure apparatus and device manufacturing method |
| JP2000240717A (en) | 1999-02-19 | 2000-09-05 | Canon Inc | Active vibration isolation device |
| JP2000252201A (en) | 1999-03-02 | 2000-09-14 | Nikon Corp | Surface position detecting method and apparatus, projection exposure method and apparatus using the same, and semiconductor device manufacturing method |
| JP2000283889A (en) | 1999-03-31 | 2000-10-13 | Nikon Corp | Projection optical system inspection apparatus and inspection method, exposure apparatus, and microdevice manufacturing method |
| JP2000286176A (en) | 1999-03-31 | 2000-10-13 | Hitachi Ltd | Display method of processing status in semiconductor substrate processing apparatus and semiconductor substrate processing apparatus |
| WO2000067303A1 (en) | 1999-04-28 | 2000-11-09 | Nikon Corporation | Exposure method and apparatus |
| JP3839835B2 (en) * | 1999-04-30 | 2006-11-01 | 株式会社ルネサステクノロジ | Data processing apparatus and microcomputer |
| DE19921795A1 (en) | 1999-05-11 | 2000-11-23 | Zeiss Carl Fa | Projection exposure system and exposure method of microlithography |
| JP2000003874A (en) | 1999-06-15 | 2000-01-07 | Nikon Corp | Exposure method and exposure apparatus |
| JP2001007015A (en) | 1999-06-25 | 2001-01-12 | Canon Inc | Stage equipment |
| AU4395099A (en) | 1999-06-30 | 2001-01-22 | Nikon Corporation | Exposure method and device |
| JP2001020951A (en) | 1999-07-07 | 2001-01-23 | Toto Ltd | Static pressure gas bearing |
| JP2001023996A (en) | 1999-07-08 | 2001-01-26 | Sony Corp | Semiconductor manufacturing method |
| DE10029938A1 (en) | 1999-07-09 | 2001-07-05 | Zeiss Carl | Optical system for projection exposure device, includes optical element which consists of magnesium fluoride, as main constituent |
| JP2001037201A (en) | 1999-07-21 | 2001-02-09 | Nikon Corp | Motor device, stage device, and exposure device |
| JP2001044097A (en) | 1999-07-26 | 2001-02-16 | Matsushita Electric Ind Co Ltd | Exposure equipment |
| US6280034B1 (en) * | 1999-07-30 | 2001-08-28 | Philips Electronics North America Corporation | Efficient two-panel projection system employing complementary illumination |
| JP3110023B1 (en) | 1999-09-02 | 2000-11-20 | 岩堀 雅行 | Fuel release device |
| JP4362857B2 (en) | 1999-09-10 | 2009-11-11 | 株式会社ニコン | Light source apparatus and exposure apparatus |
| JP3779105B2 (en) | 1999-09-16 | 2006-05-24 | 株式会社ジェイテクト | Power failure compensation system for magnetic bearings |
| KR100699241B1 (en) | 1999-09-20 | 2007-03-27 | 가부시키가이샤 니콘 | Parallel link mechanism, exposure apparatus and manufacturing method thereof, and device manufacturing method |
| JP2001097734A (en) | 1999-09-30 | 2001-04-10 | Toshiba Ceramics Co Ltd | Quartz glass container and manufacturing method thereof |
| WO2001027978A1 (en) | 1999-10-07 | 2001-04-19 | Nikon Corporation | Substrate, stage device, method of driving stage, exposure system and exposure method |
| JP2001110707A (en) | 1999-10-08 | 2001-04-20 | Orc Mfg Co Ltd | Optical system of peripheral aligner |
| JP2001118773A (en) | 1999-10-18 | 2001-04-27 | Nikon Corp | Stage device and exposure device |
| JP2001135560A (en) | 1999-11-04 | 2001-05-18 | Nikon Corp | Illumination optical apparatus, exposure apparatus having the illumination optical apparatus, and method for manufacturing microdevice using the exposure apparatus |
| JP2001144004A (en) | 1999-11-16 | 2001-05-25 | Nikon Corp | Exposure method, exposure apparatus, and device manufacturing method |
| JP2001167996A (en) | 1999-12-10 | 2001-06-22 | Tokyo Electron Ltd | Substrate processing equipment |
| EP1109067B1 (en) | 1999-12-13 | 2006-05-24 | ASML Netherlands B.V. | Illuminator |
| JP2002118058A (en) | 2000-01-13 | 2002-04-19 | Nikon Corp | Projection aligner and projection exposure method |
| JP2001203140A (en) | 2000-01-20 | 2001-07-27 | Nikon Corp | Stage apparatus, exposure apparatus and device manufacturing method |
| JP3413485B2 (en) | 2000-01-31 | 2003-06-03 | 住友重機械工業株式会社 | Thrust ripple measurement method for linear motor |
| JP2005233979A (en) | 2000-02-09 | 2005-09-02 | Nikon Corp | Catadioptric optics |
| JP4018309B2 (en) | 2000-02-14 | 2007-12-05 | 松下電器産業株式会社 | Circuit parameter extraction method, semiconductor integrated circuit design method and apparatus |
| JP2001228404A (en) | 2000-02-14 | 2001-08-24 | Nikon Engineering Co Ltd | Epi-illumination microscope, probe card inspection device, and probe card manufacturing method |
| JP2001228401A (en) | 2000-02-16 | 2001-08-24 | Canon Inc | Projection optical system, projection exposure apparatus using the projection optical system, and device manufacturing method |
| US6533842B1 (en) | 2000-02-24 | 2003-03-18 | Merck & Co., Inc. | Adsorption powder for removing mercury from high temperature, high moisture gas streams |
| JP2002100561A (en) | 2000-07-19 | 2002-04-05 | Nikon Corp | Exposure method and apparatus, and device manufacturing method |
| JP2001313250A (en) | 2000-02-25 | 2001-11-09 | Nikon Corp | Exposure apparatus, adjustment method thereof, and device manufacturing method using the exposure apparatus |
| JP2001242269A (en) | 2000-03-01 | 2001-09-07 | Nikon Corp | Stage apparatus, stage driving method, exposure apparatus and exposure method |
| DE10010131A1 (en) * | 2000-03-03 | 2001-09-06 | Zeiss Carl | Microlithography projection exposure with tangential polarization involves using light with preferred direction of polarization oriented perpendicularly with respect to plane of incidence |
| US7301605B2 (en) | 2000-03-03 | 2007-11-27 | Nikon Corporation | Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices |
| JP2001265581A (en) | 2000-03-21 | 2001-09-28 | Canon Inc | Software unauthorized use prevention system and unauthorized use prevention method |
| JP2001267227A (en) | 2000-03-21 | 2001-09-28 | Canon Inc | Vibration isolation system, exposure apparatus and device manufacturing method |
| JP2001338868A (en) | 2000-03-24 | 2001-12-07 | Nikon Corp | Illuminance measurement device and exposure device |
| JP2001272764A (en) | 2000-03-24 | 2001-10-05 | Canon Inc | Photomask for projection exposure and projection exposure method using the same |
| JP4689064B2 (en) | 2000-03-30 | 2011-05-25 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| JP2001282526A (en) | 2000-03-31 | 2001-10-12 | Canon Inc | Software management device, method, and computer-readable storage medium |
| JP2001296105A (en) | 2000-04-12 | 2001-10-26 | Nikon Corp | Surface position detection device, exposure device and exposure method using the detection device |
| JP2001297976A (en) | 2000-04-17 | 2001-10-26 | Canon Inc | Exposure method and exposure apparatus |
| JP3514439B2 (en) | 2000-04-20 | 2004-03-31 | キヤノン株式会社 | Support structure for optical element, exposure apparatus configured using the support structure, and method for manufacturing devices and the like using the apparatus |
| JP2001307983A (en) | 2000-04-20 | 2001-11-02 | Nikon Corp | Stage device and exposure device |
| JP2001304332A (en) | 2000-04-24 | 2001-10-31 | Canon Inc | Active vibration suppression device |
| US6680798B2 (en) | 2000-04-25 | 2004-01-20 | Asml Holding N.V. | Optical reduction system with control of illumination polarization |
| JP2002014005A (en) | 2000-04-25 | 2002-01-18 | Nikon Corp | Aerial image measurement method, imaging characteristic measurement method, aerial image measurement device, and exposure device |
| US6522483B2 (en) | 2000-04-25 | 2003-02-18 | Silicon Valley Group, Inc. | Optical reduction system with elimination of reticle diffraction induced bias |
| JP2002057097A (en) | 2000-05-31 | 2002-02-22 | Nikon Corp | Exposure apparatus, micro device, and manufacturing method thereof |
| JP2002016124A (en) | 2000-06-28 | 2002-01-18 | Sony Corp | Wafer transfer arm mechanism |
| JP2002015978A (en) | 2000-06-29 | 2002-01-18 | Canon Inc | Exposure equipment |
| JP2002043213A (en) | 2000-07-25 | 2002-02-08 | Nikon Corp | Stage equipment and exposure equipment |
| US7154684B2 (en) | 2000-08-18 | 2006-12-26 | Nikon Corporation | Optical element holding apparatus |
| JP3645801B2 (en) | 2000-08-24 | 2005-05-11 | ペンタックス株式会社 | Beam train detection method and phase filter for detection |
| JP2002071513A (en) | 2000-08-28 | 2002-03-08 | Nikon Corp | Interferometer for immersion microscope objective lens and method of evaluating immersion microscope objective lens |
| JP4504537B2 (en) | 2000-08-29 | 2010-07-14 | 芝浦メカトロニクス株式会社 | Spin processing equipment |
| JP2002093686A (en) | 2000-09-19 | 2002-03-29 | Nikon Corp | Stage device and exposure device |
| JP2002093690A (en) | 2000-09-19 | 2002-03-29 | Hitachi Ltd | Method for manufacturing semiconductor device |
| JP2002091922A (en) | 2000-09-20 | 2002-03-29 | Fujitsu General Ltd | Application software and content distribution management method and distribution management system |
| JP4245286B2 (en) | 2000-10-23 | 2009-03-25 | 株式会社ニコン | Catadioptric optical system and exposure apparatus provided with the optical system |
| JP2002141270A (en) | 2000-11-01 | 2002-05-17 | Nikon Corp | Exposure equipment |
| US20020075467A1 (en) | 2000-12-20 | 2002-06-20 | Nikon Corporation | Exposure apparatus and method |
| JP2002158157A (en) | 2000-11-17 | 2002-05-31 | Nikon Corp | Illumination optical apparatus, exposure apparatus, and method for manufacturing microdevice |
| JP2002170495A (en) | 2000-11-28 | 2002-06-14 | Akira Sekino | Integrate barrier rib synthetic resin rear substrate |
| JP2002231619A (en) | 2000-11-29 | 2002-08-16 | Nikon Corp | Illumination optical device and exposure apparatus having the illumination optical device |
| JP2002190438A (en) | 2000-12-21 | 2002-07-05 | Nikon Corp | Exposure equipment |
| JP2002198284A (en) | 2000-12-25 | 2002-07-12 | Nikon Corp | Stage equipment and exposure equipment |
| JP2002203763A (en) | 2000-12-27 | 2002-07-19 | Nikon Corp | Optical characteristic measuring method and apparatus, signal sensitivity setting method, exposure apparatus, and device manufacturing method |
| JP2002195912A (en) | 2000-12-27 | 2002-07-10 | Nikon Corp | Optical characteristic measuring method and apparatus, exposure apparatus, and device manufacturing method |
| JP2002202221A (en) | 2000-12-28 | 2002-07-19 | Nikon Corp | Position detecting method, position detecting device, optical characteristic measuring method, optical characteristic measuring device, exposure apparatus, and device manufacturing method |
| JP3495992B2 (en) | 2001-01-26 | 2004-02-09 | キヤノン株式会社 | Correction apparatus, exposure apparatus, device manufacturing method and device |
| US6563566B2 (en) | 2001-01-29 | 2003-05-13 | International Business Machines Corporation | System and method for printing semiconductor patterns using an optimized illumination and reticle |
| JP2002227924A (en) | 2001-01-31 | 2002-08-14 | Canon Inc | Vibration control damper and exposure apparatus with vibration control damper |
| SE0100336L (en) * | 2001-02-05 | 2002-08-06 | Micronic Laser Systems Ab | Addressing method and apparatus using the same technical area |
| JP4345098B2 (en) | 2001-02-06 | 2009-10-14 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| US20020198765A1 (en) | 2001-02-22 | 2002-12-26 | Magrino Susan A. | Human capital management performance capability matching system and methods |
| TWI285295B (en) | 2001-02-23 | 2007-08-11 | Asml Netherlands Bv | Illumination optimization in lithography |
| DE10113612A1 (en) | 2001-02-23 | 2002-09-05 | Zeiss Carl | Sub-objective for illumination system has two lens groups, second lens group with at least first lens with negative refractive index and at least second lens with positive refractive index |
| JP2002258487A (en) | 2001-02-28 | 2002-09-11 | Nikon Corp | Exposure method and exposure apparatus |
| JP4501292B2 (en) | 2001-03-05 | 2010-07-14 | コニカミノルタホールディングス株式会社 | Coating substrate, coating material coating method, and element manufacturing method |
| JP2002289505A (en) | 2001-03-28 | 2002-10-04 | Nikon Corp | Exposure apparatus, method of adjusting exposure apparatus, method of manufacturing micro device |
| JPWO2002080185A1 (en) | 2001-03-28 | 2004-07-22 | 株式会社ニコン | Stage apparatus, exposure apparatus, and device manufacturing method |
| JP2002365783A (en) | 2001-04-05 | 2002-12-18 | Sony Corp | Apparatus for producing mask pattern, apparatus and method for producing high-resolution mask, and method for forming resist pattern |
| JP2002305140A (en) | 2001-04-06 | 2002-10-18 | Nikon Corp | Exposure apparatus and substrate processing system |
| WO2002084850A1 (en) | 2001-04-09 | 2002-10-24 | Kabushiki Kaisha Yaskawa Denki | Canned linear motor armature and canned linear motor |
| JP2002324743A (en) | 2001-04-24 | 2002-11-08 | Canon Inc | Exposure method and apparatus |
| JP2002329651A (en) | 2001-04-27 | 2002-11-15 | Nikon Corp | Exposure apparatus, method of manufacturing exposure apparatus, and method of manufacturing micro device |
| DE10124566A1 (en) | 2001-05-15 | 2002-11-21 | Zeiss Carl | Optical imaging system with polarizing agents and quartz crystal plate therefor |
| DE10124803A1 (en) | 2001-05-22 | 2002-11-28 | Zeiss Carl | Polarizer and microlithography projection system with polarizer |
| JP2002353105A (en) | 2001-05-24 | 2002-12-06 | Nikon Corp | Illumination optical device, exposure apparatus having the illumination optical device, and method for manufacturing microdevice |
| JP4622160B2 (en) | 2001-05-31 | 2011-02-02 | 旭硝子株式会社 | Diffraction grating integrated optical rotator and optical head device |
| JP2002359174A (en) | 2001-05-31 | 2002-12-13 | Mitsubishi Electric Corp | EXPOSURE PROCESS MANAGEMENT SYSTEM, EXPOSURE PROCESS MANAGEMENT METHOD, AND PROGRAM FOR MANAGING EXPOSURE PROCESS |
| US7015491B2 (en) * | 2001-06-01 | 2006-03-21 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby, control system |
| JP4401060B2 (en) | 2001-06-01 | 2010-01-20 | エーエスエムエル ネザーランズ ビー.ブイ. | Lithographic apparatus and device manufacturing method |
| JP4689081B2 (en) | 2001-06-06 | 2011-05-25 | キヤノン株式会社 | Exposure apparatus, adjustment method, and device manufacturing method |
| JP3734432B2 (en) | 2001-06-07 | 2006-01-11 | 三星電子株式会社 | Mask transfer device, mask transfer system, and mask transfer method |
| JPWO2002101804A1 (en) | 2001-06-11 | 2004-09-30 | 株式会社ニコン | Exposure apparatus, device manufacturing method, and temperature stabilized flow path apparatus |
| JP2002367523A (en) | 2001-06-12 | 2002-12-20 | Matsushita Electric Ind Co Ltd | Plasma display panel and method of manufacturing plasma display panel |
| KR20030036254A (en) * | 2001-06-13 | 2003-05-09 | 가부시키가이샤 니콘 | Scanning exposure method and scanning exposure system, and device production method |
| JP2002373849A (en) | 2001-06-15 | 2002-12-26 | Canon Inc | Exposure equipment |
| US6788385B2 (en) | 2001-06-21 | 2004-09-07 | Nikon Corporation | Stage device, exposure apparatus and method |
| JP2003015040A (en) | 2001-07-04 | 2003-01-15 | Nikon Corp | Projection optical system and exposure apparatus having the projection optical system |
| JP2003017003A (en) | 2001-07-04 | 2003-01-17 | Canon Inc | Lamp and light source device |
| JP2003028673A (en) | 2001-07-10 | 2003-01-29 | Canon Inc | Optical encoder, semiconductor manufacturing apparatus, device manufacturing method, semiconductor manufacturing factory, and semiconductor manufacturing apparatus maintenance method |
| EP1280007B1 (en) | 2001-07-24 | 2008-06-18 | ASML Netherlands B.V. | Imaging apparatus |
| TW529172B (en) * | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
| JP2003045712A (en) | 2001-07-26 | 2003-02-14 | Japan Aviation Electronics Industry Ltd | Waterproof coil and manufacturing method thereof |
| JP4522024B2 (en) | 2001-07-27 | 2010-08-11 | キヤノン株式会社 | Mercury lamp, illumination device and exposure device |
| JP2003043223A (en) | 2001-07-30 | 2003-02-13 | Nikon Corp | Beam splitter and wave plate made of crystalline material, and optical device, exposure device, and inspection device having these crystal optical components |
| JP2003059803A (en) | 2001-08-14 | 2003-02-28 | Canon Inc | Exposure equipment |
| JP2003059286A (en) | 2001-08-20 | 2003-02-28 | Mitsubishi Electric Corp | Semiconductor device |
| JP2003068600A (en) | 2001-08-22 | 2003-03-07 | Canon Inc | Exposure apparatus and substrate chuck cooling method |
| JP4183166B2 (en) | 2001-08-31 | 2008-11-19 | 京セラ株式会社 | Positioning device components |
| JP2003075703A (en) | 2001-08-31 | 2003-03-12 | Konica Corp | Optical unit and optical device |
| JP2003081654A (en) | 2001-09-06 | 2003-03-19 | Toshiba Ceramics Co Ltd | Synthetic quartz glass and method for producing the same |
| WO2003023832A1 (en) | 2001-09-07 | 2003-03-20 | Nikon Corporation | Exposure method and system, and device production method |
| SE0103006D0 (en) | 2001-09-10 | 2001-09-10 | Micronic Lasersystems Ab | Homogenization of a spatially coherent radiation beam and reading / writing of a pattern on a workpiece |
| US6819490B2 (en) * | 2001-09-10 | 2004-11-16 | Micronic Laser Systems Ab | Homogenization of a spatially coherent radiation beam and printing and inspection, respectively, of a pattern on a workpiece |
| JP2003084445A (en) | 2001-09-13 | 2003-03-19 | Canon Inc | Scanning exposure apparatus and exposure method |
| JP4160286B2 (en) | 2001-09-21 | 2008-10-01 | 東芝マイクロエレクトロニクス株式会社 | LSI pattern dimension measurement location selection method |
| JP3910032B2 (en) | 2001-09-25 | 2007-04-25 | 大日本スクリーン製造株式会社 | Substrate developing device |
| EP1694079B1 (en) * | 2001-10-01 | 2008-07-23 | Sony Corporation | Polarization selecting prism for a projection device |
| JP4082160B2 (en) | 2001-10-01 | 2008-04-30 | ソニー株式会社 | Prism and projection device |
| JP2003114387A (en) | 2001-10-04 | 2003-04-18 | Nikon Corp | Catadioptric optical system and projection exposure apparatus having the optical system |
| JP4412450B2 (en) | 2001-10-05 | 2010-02-10 | 信越化学工業株式会社 | Anti-reflective filter |
| JP2003124095A (en) | 2001-10-11 | 2003-04-25 | Nikon Corp | Projection exposure method and apparatus, and device manufacturing method |
| JP2003130132A (en) | 2001-10-22 | 2003-05-08 | Nec Ameniplantex Ltd | Vibration isolation mechanism |
| US6577379B1 (en) * | 2001-11-05 | 2003-06-10 | Micron Technology, Inc. | Method and apparatus for shaping and/or orienting radiation irradiating a microlithographic substrate |
| JP4362999B2 (en) | 2001-11-12 | 2009-11-11 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| US6900915B2 (en) * | 2001-11-14 | 2005-05-31 | Ricoh Company, Ltd. | Light deflecting method and apparatus efficiently using a floating mirror |
| JP4307813B2 (en) | 2001-11-14 | 2009-08-05 | 株式会社リコー | Optical deflection method, optical deflection apparatus, method of manufacturing the optical deflection apparatus, optical information processing apparatus, image forming apparatus, image projection display apparatus, and optical transmission apparatus including the optical deflection apparatus |
| JP2003161882A (en) | 2001-11-29 | 2003-06-06 | Nikon Corp | Projection optical system, exposure apparatus and exposure method |
| JP3809095B2 (en) | 2001-11-29 | 2006-08-16 | ペンタックス株式会社 | Light source system for exposure apparatus and exposure apparatus |
| JP2003166856A (en) | 2001-11-29 | 2003-06-13 | Fuji Electric Co Ltd | Optical encoder |
| JP3945569B2 (en) | 2001-12-06 | 2007-07-18 | 東京応化工業株式会社 | Development device |
| JP2003188087A (en) | 2001-12-21 | 2003-07-04 | Sony Corp | Exposure method, exposure apparatus, and method of manufacturing semiconductor device |
| JP2003249443A (en) | 2001-12-21 | 2003-09-05 | Nikon Corp | Stage apparatus, stage position management method, exposure method, exposure apparatus, and device manufacturing method |
| US6577429B1 (en) * | 2002-01-15 | 2003-06-10 | Eastman Kodak Company | Laser projection display system |
| TW200302507A (en) | 2002-01-21 | 2003-08-01 | Nikon Corp | Stage device and exposure device |
| JP3809381B2 (en) | 2002-01-28 | 2006-08-16 | キヤノン株式会社 | Linear motor, stage apparatus, exposure apparatus, and device manufacturing method |
| JP2003229347A (en) | 2002-01-31 | 2003-08-15 | Canon Inc | Semiconductor manufacturing equipment |
| JP2003233001A (en) | 2002-02-07 | 2003-08-22 | Canon Inc | Reflection type projection optical system, exposure apparatus and device manufacturing method |
| JP2003240906A (en) | 2002-02-20 | 2003-08-27 | Dainippon Printing Co Ltd | Antireflection body and method of manufacturing the same |
| JP2003258071A (en) | 2002-02-28 | 2003-09-12 | Nikon Corp | Substrate holding device and exposure device |
| TWI253105B (en) | 2002-03-01 | 2006-04-11 | Nikon Corp | Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method, exposure device, recording medium, and device manufacturing method |
| AU2003211559A1 (en) * | 2002-03-01 | 2003-09-16 | Nikon Corporation | Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method, exposure device, program, and device manufacturing method |
| JP2003263119A (en) | 2002-03-07 | 2003-09-19 | Fuji Xerox Co Ltd | Rib-attached electrode and its manufacturing method |
| JP3984841B2 (en) | 2002-03-07 | 2007-10-03 | キヤノン株式会社 | Distortion measuring apparatus, distortion suppressing apparatus, exposure apparatus, and device manufacturing method |
| DE10210899A1 (en) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refractive projection lens for immersion lithography |
| JP3975787B2 (en) | 2002-03-12 | 2007-09-12 | ソニー株式会社 | Solid-state image sensor |
| JP4100011B2 (en) | 2002-03-13 | 2008-06-11 | セイコーエプソン株式会社 | Surface treatment apparatus, organic EL device manufacturing apparatus, and manufacturing method |
| JP4335495B2 (en) | 2002-03-27 | 2009-09-30 | 株式会社日立ハイテクノロジーズ | Constant pressure chamber, irradiation apparatus using the same, and circuit pattern inspection apparatus |
| JP2003297727A (en) | 2002-04-03 | 2003-10-17 | Nikon Corp | Illumination optical device, exposure apparatus and exposure method |
| CN1650401B (en) | 2002-04-09 | 2010-04-21 | 株式会社尼康 | Exposure method, exposure apparatus, and device manufacturing method |
| US6960035B2 (en) * | 2002-04-10 | 2005-11-01 | Fuji Photo Film Co., Ltd. | Laser apparatus, exposure head, exposure apparatus, and optical fiber connection method |
| JP2004006440A (en) | 2002-04-10 | 2004-01-08 | Fuji Photo Film Co Ltd | Laser apparatus, exposure head, and exposure device |
| WO2003085457A1 (en) * | 2002-04-10 | 2003-10-16 | Fuji Photo Film Co., Ltd. | Exposure head, exposure apparatus, and its application |
| DE10310690A1 (en) | 2002-04-12 | 2003-10-30 | Heidelberger Druckmasch Ag | Sheet guide in sheet-processing machine especially rotary printer has pick-up pieces, free air jet nozzles and air cushion |
| US20050095749A1 (en) | 2002-04-29 | 2005-05-05 | Mathias Krellmann | Device for protecting a chip and method for operating a chip |
| EP1499560B1 (en) | 2002-04-29 | 2005-12-14 | Micronic Laser Systems Ab | Device for protecting a chip and method for operating a chip |
| JP4324957B2 (en) * | 2002-05-27 | 2009-09-02 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and exposure method |
| TW200307179A (en) | 2002-05-27 | 2003-12-01 | Nikon Corp | Lighting device, exposing device and exposing method |
| JP2004015187A (en) | 2002-06-04 | 2004-01-15 | Fuji Photo Film Co Ltd | Photographing auxiliary system, digital camera, and server |
| JP4037179B2 (en) | 2002-06-04 | 2008-01-23 | 東京エレクトロン株式会社 | Cleaning method, cleaning device |
| JP2004014876A (en) | 2002-06-07 | 2004-01-15 | Nikon Corp | Adjustment method, method for measuring spatial image, method for measuring image surface, and exposure device |
| DE60319462T2 (en) * | 2002-06-11 | 2009-03-12 | Asml Netherlands B.V. | Lithographic apparatus and method for making an article |
| JP2004022708A (en) | 2002-06-14 | 2004-01-22 | Nikon Corp | Imaging optical system, illumination optical system, exposure apparatus and exposure method |
| JP2004179172A (en) | 2002-06-26 | 2004-06-24 | Nikon Corp | Exposure apparatus, exposure method, and device manufacturing method |
| JP4012771B2 (en) | 2002-06-28 | 2007-11-21 | 富士通エフ・アイ・ピー株式会社 | License management method, license management system, license management program |
| JP2004039952A (en) | 2002-07-05 | 2004-02-05 | Tokyo Electron Ltd | Plasma treatment apparatus and monitoring method thereof |
| JP2004040039A (en) | 2002-07-08 | 2004-02-05 | Sony Corp | How to choose the exposure method |
| JP2004045063A (en) | 2002-07-09 | 2004-02-12 | Topcon Corp | Method of manufacturing optical rotary encoder plate and optical rotary encoder plate |
| JP2004063847A (en) | 2002-07-30 | 2004-02-26 | Nikon Corp | Exposure apparatus, exposure method, and stage apparatus |
| JP2004071851A (en) | 2002-08-07 | 2004-03-04 | Canon Inc | Semiconductor exposure method and exposure apparatus |
| JP2004085612A (en) | 2002-08-22 | 2004-03-18 | Matsushita Electric Ind Co Ltd | Halftone phase shift mask, manufacturing method thereof, and pattern forming method using the same |
| JP4095376B2 (en) | 2002-08-28 | 2008-06-04 | キヤノン株式会社 | Exposure apparatus and method, and device manufacturing method |
| JP4214547B2 (en) | 2002-08-29 | 2009-01-28 | 株式会社オーク製作所 | Beam shaping optical element and pattern writing apparatus having the same |
| JP2004095653A (en) | 2002-08-29 | 2004-03-25 | Nikon Corp | Exposure equipment |
| JP2004145269A (en) | 2002-08-30 | 2004-05-20 | Nikon Corp | Projection optical system, catadioptric projection optical system, scanning exposure apparatus and exposure method |
| SE0202584D0 (en) | 2002-09-02 | 2002-09-02 | Micronic Laser Systems Ab | A method and device for coherence reduction |
| EP1395049A1 (en) | 2002-09-02 | 2004-03-03 | Sony International (Europe) GmbH | Illumination unit for a projection system |
| US20050141583A1 (en) | 2002-09-02 | 2005-06-30 | Torbjorn Sandstrom | Method and device for coherence reduction |
| JP2004103674A (en) | 2002-09-06 | 2004-04-02 | Renesas Technology Corp | Method of manufacturing semiconductor integrated circuit device |
| JP2004101362A (en) | 2002-09-10 | 2004-04-02 | Canon Inc | Stage position measurement and positioning device |
| JP2004103858A (en) | 2002-09-10 | 2004-04-02 | Sony Corp | Exposure equipment |
| JP2004098012A (en) | 2002-09-12 | 2004-04-02 | Seiko Epson Corp | Thin film forming method, thin film forming apparatus, optical element, organic electroluminescent element, semiconductor element, and electronic equipment |
| JP4269610B2 (en) | 2002-09-17 | 2009-05-27 | 株式会社ニコン | Exposure apparatus and method of manufacturing exposure apparatus |
| JP2004111579A (en) * | 2002-09-17 | 2004-04-08 | Canon Inc | Exposure method and apparatus |
| KR100480620B1 (en) * | 2002-09-19 | 2005-03-31 | 삼성전자주식회사 | Exposing equipment including a Micro Mirror Array and exposing method using the exposing equipment |
| JP2004119497A (en) | 2002-09-24 | 2004-04-15 | Huabang Electronic Co Ltd | Semiconductor manufacturing facilities and methods |
| JP4333866B2 (en) | 2002-09-26 | 2009-09-16 | 大日本スクリーン製造株式会社 | Substrate processing method and substrate processing apparatus |
| US6958867B2 (en) | 2002-09-30 | 2005-10-25 | Fuji Photo Film Co., Ltd. | Illumination optical system, exposure device using the illumination optical system, and exposure method |
| JP2005018013A (en) | 2002-09-30 | 2005-01-20 | Fuji Photo Film Co Ltd | Illumination optical system, and aligner and exposure method using it |
| JP2004128307A (en) | 2002-10-04 | 2004-04-22 | Nikon Corp | Exposure apparatus and adjustment method thereof |
| US6665119B1 (en) * | 2002-10-15 | 2003-12-16 | Eastman Kodak Company | Wire grid polarizer |
| JP2004134682A (en) | 2002-10-15 | 2004-04-30 | Nikon Corp | Gas cylinder, stage device and exposure device |
| JP2004140145A (en) | 2002-10-17 | 2004-05-13 | Nikon Corp | Exposure equipment |
| JP2004146702A (en) | 2002-10-25 | 2004-05-20 | Nikon Corp | Optical property measuring method, exposure method and device manufacturing method |
| JP2004153096A (en) | 2002-10-31 | 2004-05-27 | Nikon Corp | Exposure equipment |
| JP2004153064A (en) | 2002-10-31 | 2004-05-27 | Nikon Corp | Exposure equipment |
| JP2004152705A (en) | 2002-11-01 | 2004-05-27 | Matsushita Electric Ind Co Ltd | Method for manufacturing organic electroluminescence device |
| JP2004165249A (en) | 2002-11-11 | 2004-06-10 | Sony Corp | Exposure apparatus and exposure method |
| CN101713932B (en) | 2002-11-12 | 2012-09-26 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| JP2004163555A (en) | 2002-11-12 | 2004-06-10 | Olympus Corp | Vertical illumination microscope and objective for vertical illumination microscope |
| JP2004165416A (en) | 2002-11-13 | 2004-06-10 | Nikon Corp | Exposure equipment and building |
| JP2004172471A (en) | 2002-11-21 | 2004-06-17 | Nikon Corp | Exposure method and exposure apparatus |
| JP4378938B2 (en) | 2002-11-25 | 2009-12-09 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
| US6844927B2 (en) * | 2002-11-27 | 2005-01-18 | Kla-Tencor Technologies Corporation | Apparatus and methods for removing optical abberations during an optical inspection |
| US6958806B2 (en) * | 2002-12-02 | 2005-10-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4314555B2 (en) | 2002-12-03 | 2009-08-19 | 株式会社ニコン | Linear motor device, stage device, and exposure device |
| TW200412617A (en) * | 2002-12-03 | 2004-07-16 | Nikon Corp | Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method |
| JP4352874B2 (en) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
| KR20050085235A (en) | 2002-12-10 | 2005-08-29 | 가부시키가이샤 니콘 | Exposure system and device producing method |
| AU2003289237A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
| US20040108973A1 (en) | 2002-12-10 | 2004-06-10 | Kiser David K. | Apparatus for generating a number of color light components |
| DE10257766A1 (en) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Method for setting a desired optical property of a projection lens and microlithographic projection exposure system |
| JP2004301825A (en) | 2002-12-10 | 2004-10-28 | Nikon Corp | Surface position detecting device, exposure method, and device manufacturing method |
| WO2004053951A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure method, exposure apparatus and method for manufacturing device |
| JP4232449B2 (en) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | Exposure method, exposure apparatus, and device manufacturing method |
| JP4595320B2 (en) | 2002-12-10 | 2010-12-08 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
| AU2003289007A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Optical device and projection exposure apparatus using such optical device |
| KR101085372B1 (en) | 2002-12-10 | 2011-11-21 | 가부시키가이샤 니콘 | Exposure apparatus and device manufacturing method |
| CN1723539B (en) | 2002-12-10 | 2010-05-26 | 株式会社尼康 | Exposure apparatus and exposure method, and device manufacturing method |
| WO2004053950A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
| WO2004053953A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
| WO2004053957A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Surface position detection apparatus, exposure method, and device porducing method |
| JP2004191660A (en) | 2002-12-11 | 2004-07-08 | Fuji Photo Film Co Ltd | Exposure apparatus |
| JP2004193425A (en) | 2002-12-12 | 2004-07-08 | Nikon Corp | Movement control method and apparatus, exposure apparatus, and device manufacturing method |
| JP2004198748A (en) | 2002-12-19 | 2004-07-15 | Nikon Corp | Optical integrator, illumination optical device, exposure apparatus, and exposure method |
| US6738568B1 (en) | 2002-12-20 | 2004-05-18 | Eastman Kodak Company | Camera frame assembly having shutter that slides forward and back with zoom lens |
| JP2004205698A (en) | 2002-12-24 | 2004-07-22 | Nikon Corp | Projection optical system, exposure apparatus and exposure method |
| US6891655B2 (en) | 2003-01-02 | 2005-05-10 | Micronic Laser Systems Ab | High energy, low energy density, radiation-resistant optics used with micro-electromechanical devices |
| JP2004221253A (en) | 2003-01-14 | 2004-08-05 | Nikon Corp | Exposure equipment |
| WO2004063695A1 (en) * | 2003-01-15 | 2004-07-29 | Micronic Laser Systems Ab | A method to detect a defective pixel |
| JP2004224421A (en) | 2003-01-27 | 2004-08-12 | Tokyo Autom Mach Works Ltd | Product feeding apparatus |
| JP2004228497A (en) | 2003-01-27 | 2004-08-12 | Nikon Corp | Exposure apparatus and electronic device manufacturing method |
| JP4280509B2 (en) * | 2003-01-31 | 2009-06-17 | キヤノン株式会社 | Projection exposure mask, projection exposure mask manufacturing method, projection exposure apparatus, and projection exposure method |
| JP2004241666A (en) | 2003-02-07 | 2004-08-26 | Nikon Corp | Measurement method and exposure method |
| JP2004007417A (en) | 2003-02-10 | 2004-01-08 | Fujitsu Ltd | Information provision system |
| JP4366948B2 (en) | 2003-02-14 | 2009-11-18 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and exposure method |
| JP2004259828A (en) | 2003-02-25 | 2004-09-16 | Nikon Corp | Semiconductor exposure equipment |
| JP2004259985A (en) | 2003-02-26 | 2004-09-16 | Sony Corp | Resist pattern forming apparatus, method of forming the same, and method of manufacturing semiconductor device using the method |
| JP4604452B2 (en) | 2003-02-26 | 2011-01-05 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| KR101875296B1 (en) | 2003-02-26 | 2018-07-05 | 가부시키가이샤 니콘 | Exposure apparatus and method, and method of producing apparatus |
| JP2004260081A (en) | 2003-02-27 | 2004-09-16 | Nikon Corp | Ultraviolet reflection mirror device and projection exposure apparatus using the same |
| JP4305003B2 (en) | 2003-02-27 | 2009-07-29 | 株式会社ニコン | EUV optical system and EUV exposure apparatus |
| SE0300516D0 (en) | 2003-02-28 | 2003-02-28 | Micronic Laser Systems Ab | SLM direct writer |
| WO2004086470A1 (en) | 2003-03-25 | 2004-10-07 | Nikon Corporation | Exposure system and device production method |
| JP2004294202A (en) | 2003-03-26 | 2004-10-21 | Seiko Epson Corp | Screen defect detection method and apparatus |
| JP4265257B2 (en) | 2003-03-28 | 2009-05-20 | 株式会社ニコン | Exposure apparatus, exposure method, and film structure |
| JP4496711B2 (en) | 2003-03-31 | 2010-07-07 | 株式会社ニコン | Exposure apparatus and exposure method |
| JP2004304135A (en) | 2003-04-01 | 2004-10-28 | Nikon Corp | Exposure apparatus, exposure method, and method for manufacturing micro device |
| JP4374964B2 (en) | 2003-09-26 | 2009-12-02 | 株式会社ニコン | Quartz glass molding method and molding apparatus |
| JP4341277B2 (en) | 2003-04-07 | 2009-10-07 | 株式会社ニコン | Method of forming quartz glass |
| JP4281397B2 (en) | 2003-04-07 | 2009-06-17 | 株式会社ニコン | Quartz glass molding equipment |
| EP1612850B1 (en) | 2003-04-07 | 2009-03-25 | Nikon Corporation | Exposure apparatus and method for manufacturing a device |
| JP4465974B2 (en) | 2003-04-07 | 2010-05-26 | 株式会社ニコン | Quartz glass molding equipment |
| WO2004091079A1 (en) | 2003-04-07 | 2004-10-21 | Kabushiki Kaisha Yaskawa Denki | Canned linear motor armature and canned linear motor |
| JP4288413B2 (en) | 2003-04-07 | 2009-07-01 | 株式会社ニコン | Quartz glass molding method and molding apparatus |
| JP4428115B2 (en) | 2003-04-11 | 2010-03-10 | 株式会社ニコン | Immersion lithography system |
| JP2004319724A (en) | 2003-04-16 | 2004-11-11 | Ses Co Ltd | Structure of washing tub in semiconductor washing apparatus |
| WO2004094940A1 (en) | 2003-04-23 | 2004-11-04 | Nikon Corporation | Interferometer system, signal processing method in interferometer system, stage using the signal processing method |
| JP2006524349A (en) | 2003-04-24 | 2006-10-26 | メトコネックス カナダ インコーポレイティッド | Microelectromechanical system two-dimensional mirror with articulated suspension structure for high fill factor arrays |
| US7095546B2 (en) * | 2003-04-24 | 2006-08-22 | Metconnex Canada Inc. | Micro-electro-mechanical-system two dimensional mirror with articulated suspension structures for high fill factor arrays |
| JP2004327660A (en) | 2003-04-24 | 2004-11-18 | Nikon Corp | Scanning projection exposure apparatus, exposure method, and device manufacturing method |
| JP2004335808A (en) | 2003-05-08 | 2004-11-25 | Sony Corp | Pattern transfer device, pattern transfer method and program |
| JP2004335864A (en) | 2003-05-09 | 2004-11-25 | Nikon Corp | Exposure apparatus and exposure method |
| JP4487168B2 (en) | 2003-05-09 | 2010-06-23 | 株式会社ニコン | Stage apparatus, driving method thereof, and exposure apparatus |
| JP2004342987A (en) | 2003-05-19 | 2004-12-02 | Canon Inc | Stage equipment |
| TW200507055A (en) | 2003-05-21 | 2005-02-16 | Nikon Corp | Polarized cancellation element, illumination device, exposure device, and exposure method |
| TWI612556B (en) | 2003-05-23 | 2018-01-21 | 尼康股份有限公司 | Exposure apparatus, exposure method, and component manufacturing method |
| TW201415536A (en) | 2003-05-23 | 2014-04-16 | 尼康股份有限公司 | Exposure method, exposure device, and device manufacturing method |
| JP2004349645A (en) | 2003-05-26 | 2004-12-09 | Sony Corp | Immersion differential drainage static pressure floating pad, master exposure apparatus and exposure method using immersion differential drainage |
| CN100541717C (en) | 2003-05-28 | 2009-09-16 | 株式会社尼康 | Exposure method, exposure apparatus, and device manufacturing method |
| JP2004356410A (en) | 2003-05-29 | 2004-12-16 | Nikon Corp | Exposure apparatus and exposure method |
| DE10324477A1 (en) | 2003-05-30 | 2004-12-30 | Carl Zeiss Smt Ag | Microlithographic projection exposure system |
| KR101087516B1 (en) | 2003-06-04 | 2011-11-28 | 가부시키가이샤 니콘 | Stage apparatus, fixing method, exposure apparatus, exposure method, and device manufacturing method |
| JP2005005295A (en) | 2003-06-09 | 2005-01-06 | Nikon Corp | Stage apparatus and exposure apparatus |
| JP2005005395A (en) | 2003-06-10 | 2005-01-06 | Nikon Corp | Gas supply / exhaust method and apparatus, lens barrel, exposure apparatus and method |
| JP2005005521A (en) | 2003-06-12 | 2005-01-06 | Nikon Corp | Exposure apparatus, exposure method, and polarization state measuring apparatus |
| JP4437474B2 (en) | 2003-06-19 | 2010-03-24 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
| JP2005011990A (en) | 2003-06-19 | 2005-01-13 | Nikon Corp | Scanning projection exposure apparatus, illuminance calibration method and exposure method for scanning projection exposure apparatus |
| US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
| JP2005019628A (en) | 2003-06-25 | 2005-01-20 | Nikon Corp | Optical apparatus, exposure apparatus, and device manufacturing method |
| JP3862678B2 (en) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| JP2005026634A (en) | 2003-07-04 | 2005-01-27 | Sony Corp | Exposure apparatus and semiconductor device manufacturing method |
| WO2005006418A1 (en) | 2003-07-09 | 2005-01-20 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
| WO2005006415A1 (en) | 2003-07-09 | 2005-01-20 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
| JP2005032909A (en) | 2003-07-10 | 2005-02-03 | Fuji Photo Film Co Ltd | Lighting optical system and aligner using it |
| WO2005008754A1 (en) | 2003-07-18 | 2005-01-27 | Nikon Corporation | Flare measurement method, exposure method, and flare measurement mask |
| JP4492239B2 (en) | 2003-07-28 | 2010-06-30 | 株式会社ニコン | Exposure apparatus, device manufacturing method, and exposure apparatus control method |
| JP4492600B2 (en) | 2003-07-28 | 2010-06-30 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| JP2005051147A (en) | 2003-07-31 | 2005-02-24 | Nikon Corp | Exposure method and exposure apparatus |
| JP2005055811A (en) | 2003-08-07 | 2005-03-03 | Olympus Corp | Optical member, optical apparatus having the optical member incorporated therein, and method of assembling the optical apparatus |
| JP2005064210A (en) | 2003-08-12 | 2005-03-10 | Nikon Corp | EXPOSURE METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD USING THE EXPOSURE METHOD, AND EXPOSURE APPARATUS |
| JP4262031B2 (en) | 2003-08-19 | 2009-05-13 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| WO2005022615A1 (en) | 2003-08-29 | 2005-03-10 | Nikon Corporation | Liquid recovery apparatus, exposure apparatus, exposure method, and device production method |
| TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| JP4305095B2 (en) | 2003-08-29 | 2009-07-29 | 株式会社ニコン | Immersion projection exposure apparatus equipped with an optical component cleaning mechanism and immersion optical component cleaning method |
| TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| JP4593894B2 (en) * | 2003-09-01 | 2010-12-08 | キヤノン株式会社 | Optical encoder |
| JP4218475B2 (en) | 2003-09-11 | 2009-02-04 | 株式会社ニコン | Extreme ultraviolet optical system and exposure apparatus |
| EP1668421A2 (en) | 2003-09-12 | 2006-06-14 | Carl Zeiss SMT AG | Illumination system for a microlithography projection exposure installation |
| DE10343333A1 (en) | 2003-09-12 | 2005-04-14 | Carl Zeiss Smt Ag | Illumination system for microlithography projection exposure system, has mirror arrangement with array of individual mirrors that is controlled individually by changing angular distribution of light incident on mirror arrangement |
| JP2005091023A (en) | 2003-09-12 | 2005-04-07 | Minolta Co Ltd | Optical encoder and imaging device equipped therewith |
| JP2005093324A (en) | 2003-09-19 | 2005-04-07 | Toshiba Corp | Glass substrate used for image display device, glass substrate manufacturing method, and glass substrate manufacturing apparatus |
| JP2005093948A (en) | 2003-09-19 | 2005-04-07 | Nikon Corp | Exposure apparatus and adjustment method thereof, exposure method, and device manufacturing method |
| WO2005029559A1 (en) | 2003-09-19 | 2005-03-31 | Nikon Corporation | Exposure apparatus and device producing method |
| JP3693060B2 (en) * | 2003-09-24 | 2005-09-07 | セイコーエプソン株式会社 | Semiconductor device and manufacturing method thereof, circuit board, and electronic apparatus |
| TW200521477A (en) | 2003-09-25 | 2005-07-01 | Matsushita Electric Industrial Co Ltd | Projector and projection method |
| JP2005123586A (en) | 2003-09-25 | 2005-05-12 | Matsushita Electric Ind Co Ltd | Projection apparatus and projection method |
| US7692784B2 (en) * | 2003-09-26 | 2010-04-06 | Tidal Photonics, Inc. | Apparatus and methods relating to enhanced spectral measurement systems |
| JP4385702B2 (en) | 2003-09-29 | 2009-12-16 | 株式会社ニコン | Exposure apparatus and exposure method |
| JP4513299B2 (en) | 2003-10-02 | 2010-07-28 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| JP4470433B2 (en) | 2003-10-02 | 2010-06-02 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| JP2005114882A (en) | 2003-10-06 | 2005-04-28 | Hitachi High-Tech Electronics Engineering Co Ltd | Substrate mounting method for processing stage, substrate exposure stage, and substrate exposure apparatus |
| KR20060126949A (en) | 2003-10-08 | 2006-12-11 | 가부시키가이샤 니콘 | Substrate conveyance apparatus and substrate conveyance method, exposure apparatus, exposure method, and device manufacturing method |
| JP2005116831A (en) | 2003-10-08 | 2005-04-28 | Nikon Corp | Projection exposure apparatus, exposure method, and device manufacturing method |
| JP2005136364A (en) | 2003-10-08 | 2005-05-26 | Zao Nikon Co Ltd | Substrate transport apparatus, exposure apparatus, and device manufacturing method |
| JPWO2005036619A1 (en) | 2003-10-09 | 2007-11-22 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and exposure method |
| JPWO2005036620A1 (en) | 2003-10-10 | 2006-12-28 | 株式会社ニコン | Exposure method, exposure apparatus, and device manufacturing method |
| EP1524558A1 (en) | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2005127460A (en) | 2003-10-27 | 2005-05-19 | Mitsubishi Heavy Ind Ltd | Base isolation and quake removing floor system |
| JP4605014B2 (en) | 2003-10-28 | 2011-01-05 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| JP4195434B2 (en) | 2003-10-31 | 2008-12-10 | エーエスエムエル ネザーランズ ビー.ブイ. | Lithographic apparatus and device manufacturing method |
| JP2005140999A (en) | 2003-11-06 | 2005-06-02 | Nikon Corp | Optical system, optical system adjustment method, exposure apparatus, and exposure method |
| JP4631707B2 (en) | 2003-11-13 | 2011-02-16 | 株式会社ニコン | Illumination device, an exposure device, manufacturing method for an exposure method and device |
| WO2005048325A1 (en) | 2003-11-17 | 2005-05-26 | Nikon Corporation | Stage drive method, stage apparatus, and exposure apparatus |
| JP4470095B2 (en) | 2003-11-20 | 2010-06-02 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and exposure method |
| JP4552428B2 (en) | 2003-12-02 | 2010-09-29 | 株式会社ニコン | Illumination optical apparatus, projection exposure apparatus, exposure method, and device manufacturing method |
| JP2005175177A (en) | 2003-12-11 | 2005-06-30 | Nikon Corp | Optical apparatus and exposure apparatus |
| JP2005175176A (en) | 2003-12-11 | 2005-06-30 | Nikon Corp | Exposure method and device manufacturing method |
| DE602004030481D1 (en) | 2003-12-15 | 2011-01-20 | Nippon Kogaku Kk | STAGE SYSTEM, EXPOSURE DEVICE AND EXPOSURE METHOD |
| JP3102327U (en) | 2003-12-17 | 2004-07-02 | 国統国際股▲ふん▼有限公司 | Flexible tube leakage prevention mechanism |
| JP4954444B2 (en) | 2003-12-26 | 2012-06-13 | 株式会社ニコン | Channel forming member, exposure apparatus, and device manufacturing method |
| DE602004027162D1 (en) | 2004-01-05 | 2010-06-24 | Nippon Kogaku Kk | EXPOSURE DEVICE, EXPOSURE METHOD AND COMPONENT MANUFACTURING METHOD |
| JP4586367B2 (en) | 2004-01-14 | 2010-11-24 | 株式会社ニコン | Stage apparatus and exposure apparatus |
| JP2005209705A (en) | 2004-01-20 | 2005-08-04 | Nikon Corp | Exposure apparatus and device manufacturing method |
| JP4474927B2 (en) | 2004-01-20 | 2010-06-09 | 株式会社ニコン | Exposure method, exposure apparatus, and device manufacturing method |
| WO2005071717A1 (en) | 2004-01-26 | 2005-08-04 | Nikon Corporation | Exposure apparatus and device producing method |
| US7580559B2 (en) * | 2004-01-29 | 2009-08-25 | Asml Holding N.V. | System and method for calibrating a spatial light modulator |
| WO2005076321A1 (en) | 2004-02-03 | 2005-08-18 | Nikon Corporation | Exposure apparatus and method of producing device |
| WO2005076323A1 (en) | 2004-02-10 | 2005-08-18 | Nikon Corporation | Aligner, device manufacturing method, maintenance method and aligning method |
| JP4370992B2 (en) | 2004-02-18 | 2009-11-25 | 株式会社ニコン | Optical element and exposure apparatus |
| WO2005081291A1 (en) | 2004-02-19 | 2005-09-01 | Nikon Corporation | Exposure apparatus and method of producing device |
| JP2005234359A (en) | 2004-02-20 | 2005-09-02 | Ricoh Co Ltd | Scanning optical system optical characteristic measuring apparatus, scanning optical system optical characteristic measuring apparatus calibration method, scanning optical system, and image forming apparatus |
| US8023100B2 (en) | 2004-02-20 | 2011-09-20 | Nikon Corporation | Exposure apparatus, supply method and recovery method, exposure method, and device producing method |
| JP4693088B2 (en) * | 2004-02-20 | 2011-06-01 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and exposure method |
| JP4333404B2 (en) | 2004-02-25 | 2009-09-16 | 株式会社ニコン | Conveying apparatus, conveying method, exposure apparatus, exposure method, and device manufacturing method |
| WO2005083512A2 (en) | 2004-02-26 | 2005-09-09 | Carl Zeiss Smt Ag | Illumination system for a microlithography projection exposure installation |
| JP2005243870A (en) | 2004-02-26 | 2005-09-08 | Pentax Corp | Pattern drawing device |
| JP2005243904A (en) | 2004-02-26 | 2005-09-08 | Nikon Corp | Illumination optical apparatus, exposure apparatus, and exposure method |
| US6977718B1 (en) * | 2004-03-02 | 2005-12-20 | Advanced Micro Devices, Inc. | Lithography method and system with adjustable reflector |
| JP2005251549A (en) | 2004-03-04 | 2005-09-15 | Nikon Corp | Microswitch and driving method of microswitch |
| JP2005259789A (en) | 2004-03-09 | 2005-09-22 | Nikon Corp | Detection system, exposure apparatus, and device manufacturing method |
| JP2005257740A (en) | 2004-03-09 | 2005-09-22 | Nikon Corp | Projection optical system, exposure apparatus, and exposure method |
| JP4778685B2 (en) | 2004-03-10 | 2011-09-21 | 株式会社日立ハイテクノロジーズ | Pattern shape evaluation method and apparatus for semiconductor device |
| JP2005268700A (en) | 2004-03-22 | 2005-09-29 | Nikon Corp | Stage apparatus and exposure apparatus |
| JP2005276932A (en) | 2004-03-23 | 2005-10-06 | Nikon Corp | Exposure apparatus and device manufacturing method |
| JP2005309380A (en) * | 2004-03-26 | 2005-11-04 | Fuji Photo Film Co Ltd | Image exposure device |
| JP2005302825A (en) * | 2004-04-07 | 2005-10-27 | Canon Inc | Exposure system |
| JP4474979B2 (en) | 2004-04-15 | 2010-06-09 | 株式会社ニコン | Stage apparatus and exposure apparatus |
| KR101330370B1 (en) | 2004-04-19 | 2013-11-15 | 가부시키가이샤 니콘 | Exposure apparatus and device producing method |
| JP2005311020A (en) | 2004-04-21 | 2005-11-04 | Nikon Corp | Exposure method and device manufacturing method |
| JP4569157B2 (en) | 2004-04-27 | 2010-10-27 | 株式会社ニコン | Reflective projection optical system and exposure apparatus provided with the reflective projection optical system |
| JP2005340605A (en) | 2004-05-28 | 2005-12-08 | Nikon Corp | Exposure apparatus and adjustment method thereof |
| JP5159027B2 (en) | 2004-06-04 | 2013-03-06 | キヤノン株式会社 | Illumination optical system and exposure apparatus |
| US7123348B2 (en) | 2004-06-08 | 2006-10-17 | Asml Netherlands B.V | Lithographic apparatus and method utilizing dose control |
| JP2006005197A (en) | 2004-06-18 | 2006-01-05 | Canon Inc | Exposure equipment |
| JP4419701B2 (en) | 2004-06-21 | 2010-02-24 | 株式会社ニコン | Quartz glass molding equipment |
| US7116403B2 (en) * | 2004-06-28 | 2006-10-03 | Asml Netherlands B.V | Lithographic apparatus and device manufacturing method |
| JP2006017895A (en) | 2004-06-30 | 2006-01-19 | Integrated Solutions:Kk | Aligner |
| JP4444743B2 (en) | 2004-07-07 | 2010-03-31 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
| US7283209B2 (en) * | 2004-07-09 | 2007-10-16 | Carl Zeiss Smt Ag | Illumination system for microlithography |
| JP2006024819A (en) | 2004-07-09 | 2006-01-26 | Renesas Technology Corp | Immersion exposure apparatus and manufacturing method for electronic device |
| US7259827B2 (en) | 2004-07-14 | 2007-08-21 | Asml Netherlands B.V. | Diffuser unit, lithographic apparatus, method for homogenizing a beam of radiation, a device manufacturing method and device manufactured thereby |
| US20080012511A1 (en) | 2004-07-15 | 2008-01-17 | Nikon Corporation | Planar Motor Device, Stage Device, Exposure Device and Device Manufacturing Method |
| JP2006032750A (en) | 2004-07-20 | 2006-02-02 | Canon Inc | Immersion projection exposure apparatus and device manufacturing method |
| JP4411158B2 (en) | 2004-07-29 | 2010-02-10 | キヤノン株式会社 | Exposure equipment |
| JP2006049758A (en) | 2004-08-09 | 2006-02-16 | Nikon Corp | Exposure apparatus control method, and exposure method and apparatus using the same |
| JP2006054328A (en) | 2004-08-12 | 2006-02-23 | Nikon Corp | Illumination optical apparatus, exposure apparatus, and microdevice manufacturing method |
| JP2006054364A (en) | 2004-08-13 | 2006-02-23 | Nikon Corp | Substrate adsorption device, exposure device |
| JP4599936B2 (en) | 2004-08-17 | 2010-12-15 | 株式会社ニコン | Illumination optical apparatus, adjustment method of illumination optical apparatus, exposure apparatus, and exposure method |
| US8305553B2 (en) | 2004-08-18 | 2012-11-06 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| JP2006073584A (en) | 2004-08-31 | 2006-03-16 | Nikon Corp | Exposure apparatus and method, and device manufacturing method |
| KR101187611B1 (en) | 2004-09-01 | 2012-10-08 | 가부시키가이샤 니콘 | Substrate holder, stage apparatus, and exposure apparatus |
| JP4772306B2 (en) | 2004-09-06 | 2011-09-14 | 株式会社東芝 | Immersion optical device and cleaning method |
| JP2006080281A (en) | 2004-09-09 | 2006-03-23 | Nikon Corp | Stage apparatus, gas bearing apparatus, exposure apparatus, and device manufacturing method |
| JPWO2006028188A1 (en) | 2004-09-10 | 2008-05-08 | 株式会社ニコン | Stage apparatus and exposure apparatus |
| JP2006086141A (en) | 2004-09-14 | 2006-03-30 | Nikon Corp | Projection optical system, exposure apparatus, and exposure method |
| CN100456423C (en) | 2004-09-14 | 2009-01-28 | 尼康股份有限公司 | Calibration method and exposure apparatus |
| WO2006030910A1 (en) | 2004-09-17 | 2006-03-23 | Nikon Corporation | Substrate for exposure, exposure method and device manufacturing method |
| JP2006086442A (en) | 2004-09-17 | 2006-03-30 | Nikon Corp | Stage apparatus and exposure apparatus |
| US7004214B1 (en) * | 2004-09-17 | 2006-02-28 | Adam Awad | Hydraulic system line bleeding tool |
| JP4804358B2 (en) | 2004-09-27 | 2011-11-02 | 浜松ホトニクス株式会社 | Spatial light modulation device, optical processing device, and method of using coupling prism |
| JP2006100363A (en) | 2004-09-28 | 2006-04-13 | Canon Inc | Exposure apparatus, exposure method, and device manufacturing method. |
| JP4747545B2 (en) | 2004-09-30 | 2011-08-17 | 株式会社ニコン | Stage apparatus, exposure apparatus, and device manufacturing method |
| GB2419208A (en) * | 2004-10-18 | 2006-04-19 | Qinetiq Ltd | Optical correlation employing an optical bit delay |
| JP4335114B2 (en) | 2004-10-18 | 2009-09-30 | 日本碍子株式会社 | Micromirror device |
| US7177012B2 (en) | 2004-10-18 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2006120985A (en) | 2004-10-25 | 2006-05-11 | Nikon Corp | Illumination optical apparatus, exposure apparatus, and exposure method |
| JP2006128192A (en) | 2004-10-26 | 2006-05-18 | Nikon Corp | Holding device, lens barrel, exposure apparatus, and device manufacturing method |
| WO2006049134A1 (en) | 2004-11-01 | 2006-05-11 | Nikon Corporation | Exposure apparatus and device producing method |
| JP4517354B2 (en) | 2004-11-08 | 2010-08-04 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
| WO2006051909A1 (en) | 2004-11-11 | 2006-05-18 | Nikon Corporation | Exposure method, device manufacturing method, and substrate |
| JP2006140366A (en) | 2004-11-15 | 2006-06-01 | Nikon Corp | Projection optical system and exposure apparatus |
| US7333177B2 (en) * | 2004-11-30 | 2008-02-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| TWI493600B (en) | 2004-12-15 | 2015-07-21 | 尼康股份有限公司 | A substrate holding device, an exposure device, and a device manufacturing method |
| JP2005150759A (en) | 2004-12-15 | 2005-06-09 | Nikon Corp | Scanning exposure equipment |
| JP2006170811A (en) | 2004-12-16 | 2006-06-29 | Nikon Corp | Multilayer reflector, EUV exposure apparatus, and soft X-ray optical instrument |
| JP2006170899A (en) | 2004-12-17 | 2006-06-29 | Sendai Nikon:Kk | Photoelectric encoder |
| WO2006068233A1 (en) | 2004-12-24 | 2006-06-29 | Nikon Corporation | Magnetic guiding apparatus, stage apparatus, exposure apparatus and device manufacturing method |
| JP2006177865A (en) | 2004-12-24 | 2006-07-06 | Ntn Corp | Magnetic encoder and bearing for wheel equipped with it |
| JP4402582B2 (en) | 2004-12-27 | 2010-01-20 | 大日本印刷株式会社 | Case for large photomask and case changer |
| US20060138349A1 (en) | 2004-12-27 | 2006-06-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4632793B2 (en) | 2005-01-12 | 2011-02-16 | 京セラ株式会社 | Portable terminal with navigation function |
| TWI453795B (en) * | 2005-01-21 | 2014-09-21 | 尼康股份有限公司 | Illumination optical device, exposure device, exposure method, and component manufacturing method |
| WO2006077958A1 (en) | 2005-01-21 | 2006-07-27 | Nikon Corporation | Linear motor, stage apparatus, and exposure apparatus |
| EP1843204A1 (en) | 2005-01-25 | 2007-10-10 | Nikon Corporation | Exposure device, exposure method, and micro device manufacturing method |
| JP2006208432A (en) * | 2005-01-25 | 2006-08-10 | Fuji Photo Film Co Ltd | Exposure method and apparatus |
| KR100664325B1 (en) | 2005-02-04 | 2007-01-04 | 삼성전자주식회사 | Optical tunnels and projection devices comprising the same |
| JP2006216917A (en) * | 2005-02-07 | 2006-08-17 | Canon Inc | Illumination optical system, exposure apparatus, and device manufacturing method |
| WO2006085524A1 (en) | 2005-02-14 | 2006-08-17 | Nikon Corporation | Exposure equipment |
| JPWO2006085626A1 (en) | 2005-02-14 | 2008-06-26 | 株式会社ニコン | Exposure method and apparatus, and device manufacturing method |
| JP4650619B2 (en) | 2005-03-09 | 2011-03-16 | 株式会社ニコン | Drive unit, optical unit, optical apparatus, and exposure apparatus |
| JP2006253572A (en) | 2005-03-14 | 2006-09-21 | Nikon Corp | Stage apparatus, exposure apparatus, and device manufacturing method |
| US8081295B2 (en) | 2005-03-15 | 2011-12-20 | Carl Zeiss Smt Gmbh | Projection exposure method and projection exposure system therefor |
| ATE457070T1 (en) | 2005-03-18 | 2010-02-15 | Univ Danmarks Tekniske | OPTICAL MANIPULATION SYSTEM WITH MULTIPLE OPTICAL TRAPS |
| WO2006100889A1 (en) | 2005-03-23 | 2006-09-28 | Konica Minolta Holdings, Inc. | Method for forming organic el layer |
| JP4858744B2 (en) | 2005-03-24 | 2012-01-18 | 株式会社ニコン | Exposure equipment |
| JP4561425B2 (en) * | 2005-03-24 | 2010-10-13 | ソニー株式会社 | Hologram recording / reproducing apparatus and hologram recording / reproducing method |
| US7317506B2 (en) * | 2005-03-29 | 2008-01-08 | Asml Netherlands B.V. | Variable illumination source |
| US7548302B2 (en) * | 2005-03-29 | 2009-06-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2006278820A (en) | 2005-03-30 | 2006-10-12 | Nikon Corp | Exposure method and apparatus |
| JP4493538B2 (en) | 2005-03-31 | 2010-06-30 | 富士通株式会社 | Wavelength selective switch |
| JP4546315B2 (en) | 2005-04-07 | 2010-09-15 | 株式会社神戸製鋼所 | Manufacturing method of mold for microfabrication |
| US20080246937A1 (en) | 2005-04-27 | 2008-10-09 | Nikon Corporation | Exposing Method, Exposure Apparatus, Device Fabricating Method, and Film Evaluating Method |
| US7400382B2 (en) | 2005-04-28 | 2008-07-15 | Asml Holding N.V. | Light patterning device using tilting mirrors in a superpixel form |
| US7724379B2 (en) | 2005-05-12 | 2010-05-25 | Technodream21, Inc. | 3-Dimensional shape measuring method and device thereof |
| JP4771753B2 (en) | 2005-06-08 | 2011-09-14 | 新光電気工業株式会社 | Surface light source control apparatus and surface light source control method |
| JP2006351586A (en) | 2005-06-13 | 2006-12-28 | Nikon Corp | Illumination apparatus, projection exposure apparatus, and microdevice manufacturing method |
| JP4710427B2 (en) | 2005-06-15 | 2011-06-29 | 株式会社ニコン | Optical element holding apparatus, lens barrel, exposure apparatus, and device manufacturing method |
| WO2007004567A1 (en) | 2005-07-01 | 2007-01-11 | Nikon Corporation | Exposure apparatus, exposure method, device manufacturing method, and system |
| DE102005030839A1 (en) | 2005-07-01 | 2007-01-11 | Carl Zeiss Smt Ag | Projection exposure system with a plurality of projection lenses |
| JP4684774B2 (en) | 2005-07-05 | 2011-05-18 | 株式会社ナノシステムソリューションズ | Exposure equipment |
| CN101138070B (en) | 2005-08-05 | 2011-03-23 | 株式会社尼康 | Stage apparatus and exposure apparatus |
| JP2007048819A (en) | 2005-08-08 | 2007-02-22 | Nikon Corp | Surface position detection apparatus, exposure apparatus, and microdevice manufacturing method |
| JP2007048851A (en) * | 2005-08-09 | 2007-02-22 | Nikon Corp | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
| JP2007043980A (en) | 2005-08-11 | 2007-02-22 | Sanei Gen Ffi Inc | Quality improver for japanese/western baked confectionery |
| JP2007087306A (en) | 2005-09-26 | 2007-04-05 | Yokohama National Univ | Target image designation creation method |
| JP2007093546A (en) | 2005-09-30 | 2007-04-12 | Nikon Corp | Encoder system, stage apparatus and exposure apparatus |
| JP4640090B2 (en) | 2005-10-04 | 2011-03-02 | ウシオ電機株式会社 | Discharge lamp holder and discharge lamp holding mechanism |
| JP2007113939A (en) | 2005-10-18 | 2007-05-10 | Nikon Corp | MEASUREMENT DEVICE AND MEASUREMENT METHOD, STAGE DEVICE, EXPOSURE DEVICE AND EXPOSURE METHOD |
| JP2007120333A (en) | 2005-10-25 | 2007-05-17 | Mitsubishi Heavy Ind Ltd | Injection pipe of combustor for rocket and combustor for rocket |
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| JP2007295702A (en) | 2006-04-24 | 2007-11-08 | Toshiba Mach Co Ltd | Linear motor, and stage drive device |
| JPWO2007132862A1 (en) | 2006-05-16 | 2009-09-24 | 株式会社ニコン | Projection optical system, exposure method, exposure apparatus, and device manufacturing method |
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| JP4873138B2 (en) | 2006-06-21 | 2012-02-08 | 富士ゼロックス株式会社 | Information processing apparatus and program |
| DE102006032810A1 (en) | 2006-07-14 | 2008-01-17 | Carl Zeiss Smt Ag | Illumination optics for a microlithography projection exposure apparatus, illumination system with such an illumination optics, microlithography projection exposure apparatus with such an illumination system, microlithographic production method for components and component produced by this method |
| WO2008015973A1 (en) | 2006-08-02 | 2008-02-07 | Nikon Corporation | Defect detecting apparatus and defect detecting method |
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| JP2008058580A (en) | 2006-08-31 | 2008-03-13 | Canon Inc | Image forming apparatus, monitoring apparatus, control method, and program |
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| EP2068349A4 (en) | 2006-09-29 | 2011-03-30 | Nikon Corp | Stage device and exposure device |
| KR100855628B1 (en) | 2006-10-02 | 2008-09-03 | 삼성전기주식회사 | Device and method for inspecting optical modulator |
| US7804603B2 (en) * | 2006-10-03 | 2010-09-28 | Asml Netherlands B.V. | Measurement apparatus and method |
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| JP4924879B2 (en) | 2006-11-14 | 2012-04-25 | 株式会社ニコン | Encoder |
| WO2008061681A2 (en) | 2006-11-21 | 2008-05-29 | Carl Zeiss Smt Ag | Illumination lens system for projection microlithography, and measuring and monitoring method for such an illumination lens system |
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| JP2007274881A (en) | 2006-12-01 | 2007-10-18 | Nikon Corp | Mobile device, fine moving body, and exposure apparatus |
| JPWO2008075742A1 (en) | 2006-12-20 | 2010-04-15 | 株式会社ニコン | Maintenance method, exposure method, exposure apparatus, and device manufacturing method |
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| WO2008078668A1 (en) | 2006-12-26 | 2008-07-03 | Miura Co., Ltd. | Method of feeding makeup water for boiler water supply |
| KR20150036734A (en) | 2006-12-27 | 2015-04-07 | 가부시키가이샤 니콘 | Stage apparatus, exposure apparatus and device manufacturing method |
| WO2008090975A1 (en) | 2007-01-26 | 2008-07-31 | Nikon Corporation | Support structure and exposure apparatus |
| US8937706B2 (en) | 2007-03-30 | 2015-01-20 | Asml Netherlands B.V. | Lithographic apparatus and method |
| US9250536B2 (en) * | 2007-03-30 | 2016-02-02 | Asml Netherlands B.V. | Lithographic apparatus and method |
| US20080259304A1 (en) * | 2007-04-20 | 2008-10-23 | Asml Netherlands B.V. | Lithographic apparatus and method |
| JP5345132B2 (en) | 2007-04-25 | 2013-11-20 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Illumination system for illuminating a mask in a microlithographic exposure apparatus |
| CN101681092B (en) | 2007-05-09 | 2012-07-25 | 株式会社尼康 | Photomask substrate, photomask substrate forming member, photomask substrate manufacturing method, photomask, and exposure method using photomask |
| WO2008149537A1 (en) | 2007-05-31 | 2008-12-11 | Panasonic Corporation | Image capturing device, additional information providing server, and additional information filtering system |
| US7573564B2 (en) * | 2007-06-26 | 2009-08-11 | The United States Of America As Represented By The Secretary Of The Army | Systems for doppler tracking using photonic mixing detectors |
| WO2009026947A1 (en) | 2007-08-30 | 2009-03-05 | Carl Zeiss Smt Ag | Illumination system for illuminating a mask in a microlithographic projection exposure apparatus |
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| US8451427B2 (en) | 2007-09-14 | 2013-05-28 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
| DE102007043958B4 (en) | 2007-09-14 | 2011-08-25 | Carl Zeiss SMT GmbH, 73447 | Illumination device of a microlithographic projection exposure apparatus |
| US20090091730A1 (en) * | 2007-10-03 | 2009-04-09 | Nikon Corporation | Spatial light modulation unit, illumination apparatus, exposure apparatus, and device manufacturing method |
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| SG10201602750RA (en) | 2007-10-16 | 2016-05-30 | Nikon Corp | Illumination Optical System, Exposure Apparatus, And Device Manufacturing Method |
| WO2009050976A1 (en) * | 2007-10-16 | 2009-04-23 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
| US8379187B2 (en) * | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| JP4499774B2 (en) | 2007-10-24 | 2010-07-07 | 株式会社半導体エネルギー研究所 | Insulated gate type semiconductor device |
| JP5418230B2 (en) * | 2007-11-06 | 2014-02-19 | 株式会社ニコン | Exposure method and exposure apparatus |
| WO2009153925A1 (en) | 2008-06-17 | 2009-12-23 | 株式会社ニコン | Nano-imprint method and apparatus |
| JP5467531B2 (en) | 2008-06-26 | 2014-04-09 | 株式会社ニコン | Display element manufacturing method and manufacturing apparatus |
| WO2010001537A1 (en) | 2008-06-30 | 2010-01-07 | 株式会社ニコン | Method and apparatus for manufacturing display element, method and apparatus for manufacturing thin film transistor, and circuit forming apparatus |
-
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-
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- 2012-04-17 US US13/449,115 patent/US9057877B2/en not_active Expired - Fee Related
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- 2017-12-28 US US15/856,918 patent/US20180143444A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6900827B2 (en) * | 2001-10-19 | 2005-05-31 | Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center | Optical recorder and method thereof |
| US20030123040A1 (en) * | 2001-11-07 | 2003-07-03 | Gilad Almogy | Optical spot grid array printer |
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