[go: up one dir, main page]

TWI801099B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

Info

Publication number
TWI801099B
TWI801099B TW111102336A TW111102336A TWI801099B TW I801099 B TWI801099 B TW I801099B TW 111102336 A TW111102336 A TW 111102336A TW 111102336 A TW111102336 A TW 111102336A TW I801099 B TWI801099 B TW I801099B
Authority
TW
Taiwan
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
TW111102336A
Other languages
English (en)
Other versions
TW202247361A (zh
Inventor
竹本康男
Original Assignee
日商鎧俠股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商鎧俠股份有限公司 filed Critical 日商鎧俠股份有限公司
Publication of TW202247361A publication Critical patent/TW202247361A/zh
Application granted granted Critical
Publication of TWI801099B publication Critical patent/TWI801099B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B80/00—Assemblies of multiple devices comprising at least one memory device covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
    • H10W74/01—
    • H10W74/127—
    • H10W74/129—
    • H10W76/40—
    • H10W90/00—
    • H10W72/072—
    • H10W72/07236—
    • H10W72/073—
    • H10W72/07327—
    • H10W72/07337—
    • H10W72/20—
    • H10W72/354—
    • H10W72/5366—
    • H10W72/877—
    • H10W72/884—
    • H10W74/00—
    • H10W74/15—
    • H10W90/231—
    • H10W90/24—
    • H10W90/724—
    • H10W90/732—
    • H10W90/734—
    • H10W90/752—
    • H10W90/754—

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
TW111102336A 2021-05-28 2022-01-20 半導體裝置及其製造方法 TWI801099B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021090138A JP2022182532A (ja) 2021-05-28 2021-05-28 半導体装置およびその製造方法
JP2021-090138 2021-05-28

Publications (2)

Publication Number Publication Date
TW202247361A TW202247361A (zh) 2022-12-01
TWI801099B true TWI801099B (zh) 2023-05-01

Family

ID=84158396

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111102336A TWI801099B (zh) 2021-05-28 2022-01-20 半導體裝置及其製造方法

Country Status (4)

Country Link
US (1) US12419047B2 (zh)
JP (1) JP2022182532A (zh)
CN (1) CN115411001A (zh)
TW (1) TWI801099B (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202006907A (zh) * 2018-07-12 2020-02-01 日商東芝記憶體股份有限公司 半導體裝置
TW202010788A (zh) * 2018-05-15 2020-03-16 日商日立化成股份有限公司 半導體裝置以及在其製造中使用的熱硬化性樹脂組成物以及切晶黏晶一體型帶
TW202114083A (zh) * 2019-09-17 2021-04-01 日商鎧俠股份有限公司 半導體裝置及半導體裝置之製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4534410B2 (ja) * 2002-02-06 2010-09-01 日立化成工業株式会社 接着フィルム及びこれを用いた半導体装置
JP2004030420A (ja) 2002-06-27 2004-01-29 Sony Corp Ｉｃカードの製造方法およびｉｃカード
JP2012129464A (ja) * 2010-12-17 2012-07-05 Toshiba Corp 半導体装置およびその製造方法
JP6250265B2 (ja) * 2012-03-16 2017-12-20 リンテック株式会社 接着剤組成物、接着シートおよび半導体装置の製造方法
JP2020043258A (ja) 2018-09-12 2020-03-19 キオクシア株式会社 半導体メモリおよびその製造方法
JP2021034606A (ja) * 2019-08-27 2021-03-01 キオクシア株式会社 半導体装置およびその製造方法
JP2022034947A (ja) * 2020-08-19 2022-03-04 キオクシア株式会社 半導体装置およびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202010788A (zh) * 2018-05-15 2020-03-16 日商日立化成股份有限公司 半導體裝置以及在其製造中使用的熱硬化性樹脂組成物以及切晶黏晶一體型帶
TW202006907A (zh) * 2018-07-12 2020-02-01 日商東芝記憶體股份有限公司 半導體裝置
TW202114083A (zh) * 2019-09-17 2021-04-01 日商鎧俠股份有限公司 半導體裝置及半導體裝置之製造方法

Also Published As

Publication number Publication date
CN115411001A (zh) 2022-11-29
JP2022182532A (ja) 2022-12-08
US12419047B2 (en) 2025-09-16
TW202247361A (zh) 2022-12-01
US20220384468A1 (en) 2022-12-01

Similar Documents

Publication Publication Date Title
TWI799905B (zh) 半導體元件和半導體元件的製造方法
KR102341506B9 (ko) 반도체 패키지 및 그 제조방법
KR102220445B9 (ko) 반도체 소자 및 그 제조 방법
EP4462476A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
TWI799478B (zh) 半導體裝置、及半導體裝置之製造方法
TWI799912B (zh) 黏晶裝置及半導體裝置的製造方法
TWI800894B (zh) 半導體記憶裝置及其製造方法
EP4228007A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
EP4481836A4 (en) PHOTODETECTION DEVICE AND METHOD FOR MANUFACTURING SAME
KR102212421B9 (ko) 전하-플라즈마 효과가 적용된 반도체 소자 및 이의 제조 방법
EP4199116A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
DE102019120017A8 (de) Leistungs-halbleitervorrichtung und herstellungsverfahren
KR102399429B9 (ko) 전력 반도체 소자 및 그 제조 방법
KR102369053B9 (ko) 전력 반도체 소자 및 그 제조 방법
KR102308154B9 (ko) 전력 반도체 소자 및 그 제조 방법
KR102314770B9 (ko) 전력 반도체 소자 및 그 제조 방법
KR102334327B9 (ko) 전력 반도체 소자 및 그 제조 방법
KR102334328B9 (ko) 전력 반도체 소자 및 그 제조 방법
TWI801099B (zh) 半導體裝置及其製造方法
TWI799412B (zh) 半導體裝置及其製造方法
TWI801173B (zh) 半導體裝置及製造半導體裝置的方法
TWI800845B (zh) 半導體裝置及其製造方法
TWI800408B (zh) 半導體裝置及其製造方法
KR102208360B9 (ko) 반도체 패키지 및 그 제조 방법
DE112022001885A5 (de) Herstellungsverfahren und optoelektronischer halbleiterchip