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TWI799905B - 半導體元件和半導體元件的製造方法 - Google Patents

半導體元件和半導體元件的製造方法 Download PDF

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Publication number
TWI799905B
TWI799905B TW110123655A TW110123655A TWI799905B TW I799905 B TWI799905 B TW I799905B TW 110123655 A TW110123655 A TW 110123655A TW 110123655 A TW110123655 A TW 110123655A TW I799905 B TWI799905 B TW I799905B
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TW
Taiwan
Prior art keywords
semiconductor element
manufacturing
manufacturing semiconductor
semiconductor
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TW110123655A
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English (en)
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TW202220244A (zh
Inventor
邱泰瑋
沈鼎瀛
錢鶴
Original Assignee
大陸商廈門半導體工業技術研發有限公司
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Publication of TW202220244A publication Critical patent/TW202220244A/zh
Application granted granted Critical
Publication of TWI799905B publication Critical patent/TWI799905B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
TW110123655A 2020-07-20 2021-06-28 半導體元件和半導體元件的製造方法 TWI799905B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010697207.4 2020-07-20
CN202010697207.4A CN112002801B (zh) 2020-07-20 2020-07-20 半导体器件和半导体器件的制造方法

Publications (2)

Publication Number Publication Date
TW202220244A TW202220244A (zh) 2022-05-16
TWI799905B true TWI799905B (zh) 2023-04-21

Family

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Family Applications (1)

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TW110123655A TWI799905B (zh) 2020-07-20 2021-06-28 半導體元件和半導體元件的製造方法

Country Status (5)

Country Link
US (1) US12102021B2 (zh)
KR (1) KR102856117B1 (zh)
CN (1) CN112002801B (zh)
TW (1) TWI799905B (zh)
WO (1) WO2022017137A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112002801B (zh) * 2020-07-20 2021-09-07 厦门半导体工业技术研发有限公司 半导体器件和半导体器件的制造方法
WO2022032582A1 (zh) * 2020-08-13 2022-02-17 深圳市汇顶科技股份有限公司 忆阻器及其制作方法、阻变式存储器
CN112687793A (zh) * 2020-12-25 2021-04-20 厦门半导体工业技术研发有限公司 一种半导体器件及其制备方法
KR20230043611A (ko) * 2021-09-24 2023-03-31 삼성전자주식회사 수직적층구조를 포함하는 메모리 소자 및 그 제조방법과 메모리 소자를 포함하는 전자장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102610746A (zh) * 2011-01-20 2012-07-25 中国科学院微电子研究所 非挥发性电阻转变存储器
US20190123264A1 (en) * 2016-09-30 2019-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6927120B2 (en) 2003-05-21 2005-08-09 Sharp Laboratories Of America, Inc. Method for forming an asymmetric crystalline structure memory cell
JP5227544B2 (ja) 2007-07-12 2013-07-03 株式会社日立製作所 半導体装置
JP2009246085A (ja) 2008-03-31 2009-10-22 Hitachi Ltd 半導体装置およびその製造方法
KR20120006502A (ko) * 2009-04-10 2012-01-18 인터몰레큘러 인코퍼레이티드 개선된 변화 특징들을 갖는 저항-변화 메모리
WO2011096194A1 (ja) 2010-02-02 2011-08-11 パナソニック株式会社 抵抗変化素子の駆動方法、初期処理方法、及び不揮発性記憶装置
KR101096203B1 (ko) * 2010-04-08 2011-12-22 주식회사 하이닉스반도체 반도체 장치 및 그 제조방법
KR20110132125A (ko) * 2010-06-01 2011-12-07 삼성전자주식회사 비휘발성 메모리 소자 및 비휘발성 메모리 소자의 형성방법
JP5648406B2 (ja) * 2010-10-13 2015-01-07 ソニー株式会社 不揮発性メモリ素子及び不揮発性メモリ素子群、並びに、これらの製造方法
US9680094B2 (en) * 2012-08-30 2017-06-13 Kabushiki Kaisha Toshiba Memory device and method for manufacturing the same
KR102014375B1 (ko) * 2013-04-05 2019-08-26 에스케이하이닉스 주식회사 반도체 장치 및 이를 포함하는 전자 장치
US9508924B2 (en) * 2014-07-03 2016-11-29 Samsung Electronics Co., Ltd. Method and system for providing rare earth magnetic junctions usable in spin transfer torque magnetic random access memory applications
US9431603B1 (en) 2015-05-15 2016-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM device
CN106299107A (zh) * 2015-05-25 2017-01-04 中国科学院苏州纳米技术与纳米仿生研究所 低形成电压的阻变存储器及其制备方法
US9461245B1 (en) * 2015-11-13 2016-10-04 Taiwan Semiconductor Manufacturing Co., Ltd. Bottom electrode for RRAM structure
US9853091B2 (en) * 2016-04-26 2017-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Side bottom contact RRAM structure
CN106374040B (zh) 2016-08-26 2019-06-21 电子科技大学 一种多层阻变存储器单元及其制备方法
TWI829663B (zh) * 2018-01-19 2024-01-21 日商半導體能源研究所股份有限公司 半導體裝置以及其工作方法
KR101912894B1 (ko) * 2018-04-12 2018-10-29 에스알테크노팩 주식회사 고온내수성이 개선된 산소차단 다중코팅필름
US10892011B2 (en) * 2018-09-11 2021-01-12 iCometrue Company Ltd. Logic drive using standard commodity programmable logic IC chips comprising non-volatile random access memory cells
US10797225B2 (en) * 2018-09-18 2020-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Dual magnetic tunnel junction (DMTJ) stack design
US10636842B1 (en) * 2019-02-21 2020-04-28 Winbond Electronics Corp. Resistive random access memory and method for forming the same
US11621395B2 (en) * 2019-04-26 2023-04-04 Intel Corporation Resistive random-access memory devices and methods of fabrication
US10847578B1 (en) * 2019-07-03 2020-11-24 Windbond Electronics Corp. Three-dimensional resistive memories and methods for forming the same
CN111029363B (zh) * 2019-12-24 2021-05-11 厦门半导体工业技术研发有限公司 一种电阻式存储器及其制备方法
CN111312895A (zh) * 2020-02-21 2020-06-19 上海华力微电子有限公司 阻变存储器及阻变存储器的制造方法
CN111403599B (zh) * 2020-02-26 2022-11-04 杭州未名信科科技有限公司 一种半导体结构及其制备方法
CN112002801B (zh) 2020-07-20 2021-09-07 厦门半导体工业技术研发有限公司 半导体器件和半导体器件的制造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102610746A (zh) * 2011-01-20 2012-07-25 中国科学院微电子研究所 非挥发性电阻转变存储器
US20190123264A1 (en) * 2016-09-30 2019-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device

Also Published As

Publication number Publication date
CN112002801B (zh) 2021-09-07
US12102021B2 (en) 2024-09-24
TW202220244A (zh) 2022-05-16
US20230225229A1 (en) 2023-07-13
KR20230040949A (ko) 2023-03-23
KR102856117B1 (ko) 2025-09-04
CN112002801A (zh) 2020-11-27
WO2022017137A1 (zh) 2022-01-27

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