[go: up one dir, main page]

TWI800831B - 半導體裝置和製造半導體裝置的方法 - Google Patents

半導體裝置和製造半導體裝置的方法 Download PDF

Info

Publication number
TWI800831B
TWI800831B TW110117600A TW110117600A TWI800831B TW I800831 B TWI800831 B TW I800831B TW 110117600 A TW110117600 A TW 110117600A TW 110117600 A TW110117600 A TW 110117600A TW I800831 B TWI800831 B TW I800831B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
manufacturing
semiconductor
Prior art date
Application number
TW110117600A
Other languages
English (en)
Other versions
TW202205435A (zh
Inventor
高琬貽
蕭宇正
王俊堯
彭治棠
盧永誠
志安 徐
Original Assignee
台灣積體電路製造股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 台灣積體電路製造股份有限公司 filed Critical 台灣積體電路製造股份有限公司
Publication of TW202205435A publication Critical patent/TW202205435A/zh
Application granted granted Critical
Publication of TWI800831B publication Critical patent/TWI800831B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0245—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0147—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0193—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/853—Complementary IGFETs, e.g. CMOS comprising FinFETs
    • H10P14/6328—
    • H10P14/6682—
    • H10P14/6927—
    • H10W10/014—
    • H10W10/0145—
    • H10W10/17—
    • H10W10/0142—
TW110117600A 2020-07-22 2021-05-14 半導體裝置和製造半導體裝置的方法 TWI800831B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202063055045P 2020-07-22 2020-07-22
US63/055,045 2020-07-22
US17/157,330 US11527653B2 (en) 2020-07-22 2021-01-25 Semiconductor device and method of manufacture
US17/157,330 2021-01-25

Publications (2)

Publication Number Publication Date
TW202205435A TW202205435A (zh) 2022-02-01
TWI800831B true TWI800831B (zh) 2023-05-01

Family

ID=77358068

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110117600A TWI800831B (zh) 2020-07-22 2021-05-14 半導體裝置和製造半導體裝置的方法

Country Status (7)

Country Link
US (3) US11527653B2 (zh)
EP (1) EP3944335A1 (zh)
JP (1) JP2022022179A (zh)
KR (1) KR102591917B1 (zh)
CN (1) CN113497119A (zh)
DE (1) DE102021101880A1 (zh)
TW (1) TWI800831B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11527653B2 (en) * 2020-07-22 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacture
US20230187265A1 (en) 2021-12-15 2023-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Stress Modulation Using STI Capping Layer for Reducing Fin Bending
US12315758B2 (en) 2022-01-26 2025-05-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US12495568B2 (en) 2022-02-21 2025-12-09 Taiwan Semiconductor Manufacturing Co., Ltd. Dummy Fin structures and methods of forming same
CN116799005B (zh) * 2023-08-22 2023-11-28 合肥晶合集成电路股份有限公司 一种半导体结构及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201428887A (zh) * 2013-01-07 2014-07-16 United Microelectronics Corp 淺溝槽隔離結構暨其形成方法
US20170033199A1 (en) * 2015-07-31 2017-02-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming finfet gate oxide
TWI629790B (zh) * 2015-01-26 2018-07-11 聯華電子股份有限公司 半導體元件及其製作方法
US20190067027A1 (en) * 2017-08-31 2019-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Fin Field-Effect Transistor Device And Method
TW202013509A (zh) * 2018-08-08 2020-04-01 美商格芯（美國）集成電路科技有限公司 鰭式結構

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100640653B1 (ko) * 2005-07-15 2006-11-01 삼성전자주식회사 수직채널을 가진 반도체소자의 제조방법 및 이를 이용한반도체소자
US9214539B2 (en) * 2013-09-03 2015-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Gallium nitride transistor with a hybrid aluminum oxide layer as a gate dielectric
CN105990239B (zh) * 2015-02-06 2020-06-30 联华电子股份有限公司 半导体元件及其制作方法
US9647071B2 (en) 2015-06-15 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. FINFET structures and methods of forming the same
TWI660461B (zh) * 2015-09-03 2019-05-21 United Microelectronics Corp. 半導體元件及其製作方法
US9911804B1 (en) * 2016-08-22 2018-03-06 International Business Machines Corporation Vertical fin field effect transistor with air gap spacers
DE102017126435B4 (de) * 2017-08-31 2022-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Fin-feldeffekttransistorvorrichtung und verfahren
US10700197B2 (en) * 2017-09-29 2020-06-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10629497B2 (en) * 2017-11-02 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device structure and method for enlarging gap-fill window
US10867859B2 (en) * 2017-11-17 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices having isolation structures with liners
US10840154B2 (en) * 2017-11-28 2020-11-17 Taiwan Semiconductor Manufacturing Co.. Ltd. Method for forming semiconductor structure with high aspect ratio
DE102018126911A1 (de) * 2017-11-30 2019-06-06 Intel Corporation Gate-Schnitt und Finnentrimmisolation für fortschrittliche Integrierter-Schaltkreis-Struktur-Fertigung
KR20230006054A (ko) * 2017-11-30 2023-01-10 인텔 코포레이션 진보된 집적 회로 구조체 제조를 위한 핀 패터닝
US10840153B2 (en) * 2018-06-27 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Notched gate structure fabrication
US10748808B2 (en) 2018-07-16 2020-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Dielectric gap-filling process for semiconductor device
US11069812B2 (en) * 2018-09-28 2021-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistor device and method of forming the same
US10957585B2 (en) * 2018-10-24 2021-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same
CN111211088B (zh) * 2018-11-21 2023-04-25 台湾积体电路制造股份有限公司 半导体器件及其形成方法
US11393711B2 (en) * 2018-11-21 2022-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon oxide layer for oxidation resistance and method forming same
US11133230B2 (en) * 2020-02-26 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with dual isolation liner and method of forming the same
US11139432B1 (en) * 2020-04-01 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming a FinFET device
US11682711B2 (en) * 2020-05-28 2023-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having multi-layered gate spacers
US11302567B2 (en) * 2020-06-30 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Shallow trench isolation forming method and structures resulting therefrom
US11527653B2 (en) * 2020-07-22 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacture

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201428887A (zh) * 2013-01-07 2014-07-16 United Microelectronics Corp 淺溝槽隔離結構暨其形成方法
TWI629790B (zh) * 2015-01-26 2018-07-11 聯華電子股份有限公司 半導體元件及其製作方法
US20170033199A1 (en) * 2015-07-31 2017-02-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming finfet gate oxide
US20190067027A1 (en) * 2017-08-31 2019-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Fin Field-Effect Transistor Device And Method
TW202013509A (zh) * 2018-08-08 2020-04-01 美商格芯（美國）集成電路科技有限公司 鰭式結構

Also Published As

Publication number Publication date
KR20220012166A (ko) 2022-02-03
US20240204104A1 (en) 2024-06-20
TW202205435A (zh) 2022-02-01
DE102021101880A1 (de) 2022-01-27
US20230103640A1 (en) 2023-04-06
US11527653B2 (en) 2022-12-13
US20220029011A1 (en) 2022-01-27
CN113497119A (zh) 2021-10-12
JP2022022179A (ja) 2022-02-03
EP3944335A1 (en) 2022-01-26
US11942549B2 (en) 2024-03-26
US12266728B2 (en) 2025-04-01
KR102591917B1 (ko) 2023-10-19

Similar Documents

Publication Publication Date Title
TWI799936B (zh) 半導體裝置及形成半導體裝置之方法
SG10202006561WA (en) Semiconductor device and method of fabricating the same
SG10201907458SA (en) Semiconductor device and method of manufacturing the same
TWI800831B (zh) 半導體裝置和製造半導體裝置的方法
TWI799859B (zh) 半導體裝置及其形成方法
EP4135037A4 (en) Semiconductor structure and manufacturing method therefor
TWI799777B (zh) 半導體裝置和其製造方法
EP4148792A4 (en) SEMI-CONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING IT
EP4135036A4 (en) SEMI-CONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING IT
TWI800378B (zh) 半導體裝置及其形成方法
TWI799751B (zh) 製造半導體裝置的方法及半導體裝置
TWI800175B (zh) 半導體元件及其製造方法
TWI800879B (zh) 半導體元件及其製作方法
EP4199089A4 (en) SEMICONDUCTOR STRUCTURE AND ASSOCIATED MANUFACTURING METHOD
TWI800818B (zh) 積體電路元件及其製造方法
TWI800884B (zh) 半導體結構及其製造方法
TWI800821B (zh) 半導體元件及其製造方法
EP3961724A4 (en) SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATION METHOD
TWI801165B (zh) 半導體記憶體裝置及其製造方法
EP4383346A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
EP4207289A4 (en) SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
EP4195253A4 (en) METHOD FOR FORMING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE
EP4199088A4 (en) SEMICONDUCTOR STRUCTURE AND METHOD FOR PRODUCING THEREOF
TWI799818B (zh) 積體晶片及其形成方法
EP4033519A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME