TWI801165B - 半導體記憶體裝置及其製造方法 - Google Patents
半導體記憶體裝置及其製造方法 Download PDFInfo
- Publication number
- TWI801165B TWI801165B TW111108933A TW111108933A TWI801165B TW I801165 B TWI801165 B TW I801165B TW 111108933 A TW111108933 A TW 111108933A TW 111108933 A TW111108933 A TW 111108933A TW I801165 B TWI801165 B TW I801165B
- Authority
- TW
- Taiwan
- Prior art keywords
- fabricating
- same
- memory device
- semiconductor memory
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/482—Bit lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/50—Peripheral circuit region structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2021-0101971 | 2021-08-03 | ||
| KR1020210101971A KR102915506B1 (ko) | 2021-08-03 | 반도체 메모리 소자 및 이의 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202308037A TW202308037A (zh) | 2023-02-16 |
| TWI801165B true TWI801165B (zh) | 2023-05-01 |
Family
ID=85153504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111108933A TWI801165B (zh) | 2021-08-03 | 2022-03-11 | 半導體記憶體裝置及其製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20230039205A1 (zh) |
| CN (1) | CN115706054A (zh) |
| TW (1) | TWI801165B (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230053050A (ko) * | 2021-10-13 | 2023-04-21 | 삼성전자주식회사 | 반도체 메모리 소자 및 이의 제조 방법 |
| KR20240154987A (ko) * | 2023-04-19 | 2024-10-28 | 삼성전자주식회사 | 반도체 메모리 장치 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1909211A (zh) * | 2005-08-04 | 2007-02-07 | 三星电子株式会社 | 非易失性存储器件及其制造方法 |
| CN112117323A (zh) * | 2019-06-21 | 2020-12-22 | 三星电子株式会社 | 半导体器件及半导体器件的制造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101675459B1 (ko) * | 2010-07-02 | 2016-11-11 | 삼성전자 주식회사 | 전극 구조체 및 그 제조방법, 및 전극 구조체를 포함하는 반도체 소자 |
| KR102676879B1 (ko) * | 2017-02-08 | 2024-06-19 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| KR102495258B1 (ko) * | 2018-04-24 | 2023-02-03 | 삼성전자주식회사 | 반도체 장치 |
| KR20200046202A (ko) * | 2018-10-23 | 2020-05-07 | 삼성전자주식회사 | 반도체 장치 |
| KR102770169B1 (ko) * | 2019-08-16 | 2025-02-24 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| KR102749007B1 (ko) * | 2019-08-21 | 2025-01-02 | 삼성전자주식회사 | 집적회로 소자 및 그 제조 방법 |
| KR102753885B1 (ko) * | 2019-10-24 | 2025-01-15 | 삼성전자주식회사 | 반도체 메모리 소자 및 이의 제조 방법 |
| KR102749003B1 (ko) * | 2020-06-16 | 2025-01-02 | 삼성전자주식회사 | 집적회로 소자 |
-
2022
- 2022-03-11 TW TW111108933A patent/TWI801165B/zh active
- 2022-04-19 US US17/723,747 patent/US20230039205A1/en active Pending
- 2022-04-29 CN CN202210473142.4A patent/CN115706054A/zh active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1909211A (zh) * | 2005-08-04 | 2007-02-07 | 三星电子株式会社 | 非易失性存储器件及其制造方法 |
| CN112117323A (zh) * | 2019-06-21 | 2020-12-22 | 三星电子株式会社 | 半导体器件及半导体器件的制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115706054A (zh) | 2023-02-17 |
| TW202308037A (zh) | 2023-02-16 |
| KR20230020611A (ko) | 2023-02-13 |
| US20230039205A1 (en) | 2023-02-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG10202006188PA (en) | Semiconductor memory devices and methods of fabricating the same | |
| SG10202006561WA (en) | Semiconductor device and method of fabricating the same | |
| TWI799936B (zh) | 半導體裝置及形成半導體裝置之方法 | |
| SG10202007985RA (en) | Semiconductor memory device and a method of fabricating the same | |
| TWI800831B (zh) | 半導體裝置和製造半導體裝置的方法 | |
| EP4148792A4 (en) | SEMI-CONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING IT | |
| EP4135037A4 (en) | Semiconductor structure and manufacturing method therefor | |
| TWI799777B (zh) | 半導體裝置和其製造方法 | |
| EP4135036A4 (en) | SEMI-CONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING IT | |
| TWI800378B (zh) | 半導體裝置及其形成方法 | |
| TWI801165B (zh) | 半導體記憶體裝置及其製造方法 | |
| TWI800175B (zh) | 半導體元件及其製造方法 | |
| TWI800879B (zh) | 半導體元件及其製作方法 | |
| TWI800821B (zh) | 半導體元件及其製造方法 | |
| EP4199089A4 (en) | SEMICONDUCTOR STRUCTURE AND ASSOCIATED MANUFACTURING METHOD | |
| TWI800818B (zh) | 積體電路元件及其製造方法 | |
| TWI800884B (zh) | 半導體結構及其製造方法 | |
| TWI801130B (zh) | 記憶體元件及其製造方法 | |
| EP3961724A4 (en) | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATION METHOD | |
| TWI801234B (zh) | 電路結構、半導體元件及其製造方法 | |
| EP4383346A4 (en) | SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR | |
| EP4207289A4 (en) | SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT | |
| EP4195253A4 (en) | METHOD FOR FORMING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE | |
| EP4199088A4 (en) | SEMICONDUCTOR STRUCTURE AND METHOD FOR PRODUCING THEREOF | |
| TWI800333B (zh) | 使用半導體元件的記憶裝置及其製造方法 |