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TWI800175B - 半導體元件及其製造方法 - Google Patents

半導體元件及其製造方法 Download PDF

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Publication number
TWI800175B
TWI800175B TW110148225A TW110148225A TWI800175B TW I800175 B TWI800175 B TW I800175B TW 110148225 A TW110148225 A TW 110148225A TW 110148225 A TW110148225 A TW 110148225A TW I800175 B TWI800175 B TW I800175B
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TW
Taiwan
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
TW110148225A
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English (en)
Other versions
TW202234666A (zh
Inventor
陳勝捷
謝智仁
李銘倫
王偉民
劉銘棋
Original Assignee
台灣積體電路製造股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 台灣積體電路製造股份有限公司 filed Critical 台灣積體電路製造股份有限公司
Publication of TW202234666A publication Critical patent/TW202234666A/zh
Application granted granted Critical
Publication of TWI800175B publication Critical patent/TWI800175B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
    • H10W74/43—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/50—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6892—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H10W74/01—
    • H10W74/147—

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW110148225A 2021-02-23 2021-12-22 半導體元件及其製造方法 TWI800175B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202163152454P 2021-02-23 2021-02-23
US63/152,454 2021-02-23
US17/474,297 2021-09-14
US17/474,297 US11637046B2 (en) 2021-02-23 2021-09-14 Semiconductor memory device having composite dielectric film structure and methods of forming the same

Publications (2)

Publication Number Publication Date
TW202234666A TW202234666A (zh) 2022-09-01
TWI800175B true TWI800175B (zh) 2023-04-21

Family

ID=82166489

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110148225A TWI800175B (zh) 2021-02-23 2021-12-22 半導體元件及其製造方法

Country Status (6)

Country Link
US (3) US11637046B2 (zh)
JP (1) JP7376628B2 (zh)
KR (2) KR20220120451A (zh)
CN (1) CN114709218A (zh)
DE (1) DE102022100455B4 (zh)
TW (1) TWI800175B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240297125A1 (en) * 2023-03-05 2024-09-05 Nanya Technology Corporation Memory device and fabricating method thereof
TWI852393B (zh) * 2023-03-10 2024-08-11 華邦電子股份有限公司 半導體裝置及其形成方法
US20250046375A1 (en) * 2023-07-31 2025-02-06 Texas Instruments Incorporated Integrated circuit including flash memory and cmos logic circuitry

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201705302A (zh) * 2015-03-17 2017-02-01 瑞薩電子股份有限公司 半導體裝置及其製造方法
TW201834212A (zh) * 2016-09-28 2018-09-16 日商瑞薩電子股份有限公司 半導體裝置及半導體裝置之製造方法
US20180301542A1 (en) * 2017-06-15 2018-10-18 Semiconductor Manufacturing International (Shanghai) Corporation Semiconductor structure and fabrication method thereof

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KR100327428B1 (ko) 1999-08-09 2002-03-13 박종섭 반도체 소자의 제조 방법
KR100450666B1 (ko) 2001-09-03 2004-10-01 삼성전자주식회사 선택적 실리사이드막의 형성 방법 및 이를 구비한 반도체소자
JP2003218245A (ja) * 2002-01-25 2003-07-31 Sony Corp 不揮発性半導体メモリ装置の製造方法
JP2006303024A (ja) 2005-04-18 2006-11-02 Toshiba Microelectronics Corp 半導体装置及び半導体装置の製造方法
JP2007048904A (ja) * 2005-08-09 2007-02-22 Renesas Technology Corp 不揮発性半導体記憶装置およびその製造方法
JP2007234861A (ja) * 2006-03-01 2007-09-13 Renesas Technology Corp 半導体装置の製造方法
US7601998B2 (en) * 2006-09-14 2009-10-13 Samsung Electronics Co., Ltd. Semiconductor memory device having metallization comprising select lines, bit lines and word lines
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JP2019197821A (ja) 2018-05-10 2019-11-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
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TW201705302A (zh) * 2015-03-17 2017-02-01 瑞薩電子股份有限公司 半導體裝置及其製造方法
TW201834212A (zh) * 2016-09-28 2018-09-16 日商瑞薩電子股份有限公司 半導體裝置及半導體裝置之製造方法
US20180301542A1 (en) * 2017-06-15 2018-10-18 Semiconductor Manufacturing International (Shanghai) Corporation Semiconductor structure and fabrication method thereof

Also Published As

Publication number Publication date
DE102022100455B4 (de) 2025-10-16
US11637046B2 (en) 2023-04-25
DE102022100455A1 (de) 2022-08-25
US20220270943A1 (en) 2022-08-25
KR20220120451A (ko) 2022-08-30
TW202234666A (zh) 2022-09-01
JP7376628B2 (ja) 2023-11-08
US12014966B2 (en) 2024-06-18
CN114709218A (zh) 2022-07-05
US20230207409A1 (en) 2023-06-29
JP2022128592A (ja) 2022-09-02
KR20240116444A (ko) 2024-07-29
US20240290672A1 (en) 2024-08-29

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