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TWI560168B - - Google Patents

Info

Publication number
TWI560168B
TWI560168B TW104127070A TW104127070A TWI560168B TW I560168 B TWI560168 B TW I560168B TW 104127070 A TW104127070 A TW 104127070A TW 104127070 A TW104127070 A TW 104127070A TW I560168 B TWI560168 B TW I560168B
Authority
TW
Taiwan
Application number
TW104127070A
Other versions
TW201607914A (zh
Inventor
Hideko Fukushima
Shujiro Uesaka
Yu Tamada
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Publication of TW201607914A publication Critical patent/TW201607914A/zh
Application granted granted Critical
Publication of TWI560168B publication Critical patent/TWI560168B/zh

Links

Classifications

    • H10P14/6329—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10P14/3402—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
TW104127070A 2014-08-27 2015-08-20 濺鍍靶材 TW201607914A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014172233A JP6041219B2 (ja) 2014-08-27 2014-08-27 スパッタリングターゲット

Publications (2)

Publication Number Publication Date
TW201607914A TW201607914A (zh) 2016-03-01
TWI560168B true TWI560168B (zh) 2016-12-01

Family

ID=55418759

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104127070A TW201607914A (zh) 2014-08-27 2015-08-20 濺鍍靶材

Country Status (4)

Country Link
JP (1) JP6041219B2 (zh)
KR (2) KR20160025459A (zh)
CN (1) CN105385995B (zh)
TW (1) TW201607914A (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020170949A1 (ja) * 2019-02-18 2020-08-27 出光興産株式会社 酸化物焼結体、スパッタリングターゲット及びスパッタリングターゲットの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201300344A (zh) * 2011-03-02 2013-01-01 鋼臂功科研股份有限公司 氧化物燒結體及濺鍍靶
TW201307595A (zh) * 2011-04-29 2013-02-16 三菱綜合材料股份有限公司 濺鍍靶及其製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4552950B2 (ja) * 2006-03-15 2010-09-29 住友金属鉱山株式会社 ターゲット用酸化物焼結体、その製造方法、それを用いた透明導電膜の製造方法、及び得られる透明導電膜
JP2009010052A (ja) * 2007-06-26 2009-01-15 Kobe Steel Ltd 表示装置の製造方法
JP5309722B2 (ja) * 2007-11-14 2013-10-09 富士通セミコンダクター株式会社 半導体装置およびその製造方法
JP2009123957A (ja) 2007-11-15 2009-06-04 Sumitomo Chemical Co Ltd 酸化物半導体材料及びその製造方法、電子デバイス及び電界効果トランジスタ
JP2009212033A (ja) * 2008-03-06 2009-09-17 Sumitomo Chemical Co Ltd 透明導電性結晶膜の製造方法
JP5024226B2 (ja) * 2008-08-06 2012-09-12 日立金属株式会社 酸化物焼結体およびその製造方法、スパッタリングターゲット、半導体薄膜
JP2012180248A (ja) * 2011-03-02 2012-09-20 Kobelco Kaken:Kk 酸化物焼結体およびスパッタリングターゲット
JP6212869B2 (ja) * 2012-02-06 2017-10-18 三菱マテリアル株式会社 酸化物スパッタリングターゲット
JP2014062316A (ja) 2012-09-03 2014-04-10 Idemitsu Kosan Co Ltd スパッタリングターゲット

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201300344A (zh) * 2011-03-02 2013-01-01 鋼臂功科研股份有限公司 氧化物燒結體及濺鍍靶
TW201307595A (zh) * 2011-04-29 2013-02-16 三菱綜合材料股份有限公司 濺鍍靶及其製造方法

Also Published As

Publication number Publication date
JP2016044357A (ja) 2016-04-04
KR20160025459A (ko) 2016-03-08
KR20170039627A (ko) 2017-04-11
JP6041219B2 (ja) 2016-12-07
CN105385995B (zh) 2019-11-19
KR101884563B1 (ko) 2018-08-01
CN105385995A (zh) 2016-03-09
TW201607914A (zh) 2016-03-01

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