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TWI366865B - Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy - Google Patents

Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy

Info

Publication number
TWI366865B
TWI366865B TW092135555A TW92135555A TWI366865B TW I366865 B TWI366865 B TW I366865B TW 092135555 A TW092135555 A TW 092135555A TW 92135555 A TW92135555 A TW 92135555A TW I366865 B TWI366865 B TW I366865B
Authority
TW
Taiwan
Prior art keywords
growth
gallium nitride
vapor phase
dislocation density
phase epitaxy
Prior art date
Application number
TW092135555A
Other languages
English (en)
Other versions
TW200419652A (en
Inventor
Benjamin A Haskell
Michael D Craven
Paul T Fini
Steven P Denbaars
James S Speck
Shuji Nakamura
Original Assignee
Univ California
Japan Science & Tech Agency
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California, Japan Science & Tech Agency filed Critical Univ California
Publication of TW200419652A publication Critical patent/TW200419652A/zh
Application granted granted Critical
Publication of TWI366865B publication Critical patent/TWI366865B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H10P14/24—
    • H10P14/271—
    • H10P14/276—
    • H10P14/2921—
    • H10P14/2926—
    • H10P14/3216—
    • H10P14/3416—
    • H10P14/3466—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
TW092135555A 2002-12-16 2003-12-16 Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy TWI366865B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43384402P 2002-12-16 2002-12-16
US43384302P 2002-12-16 2002-12-16

Publications (2)

Publication Number Publication Date
TW200419652A TW200419652A (en) 2004-10-01
TWI366865B true TWI366865B (en) 2012-06-21

Family

ID=32717761

Family Applications (4)

Application Number Title Priority Date Filing Date
TW092135556A TW200423397A (en) 2002-12-16 2003-12-16 Growth of planar, non-polar A-plane gallium nitride by hydride vapor phase epitaxy
TW099131879A TWI433313B (zh) 2002-12-16 2003-12-16 藉氫化物汽相磊晶術生長平面、非極性ａ－平面氮化鎵
TW099131877A TWI445054B (zh) 2002-12-16 2003-12-16 藉由氫化物汽相磊晶術生長減少差排密度之非極性氮化鎵
TW092135555A TWI366865B (en) 2002-12-16 2003-12-16 Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy

Family Applications Before (3)

Application Number Title Priority Date Filing Date
TW092135556A TW200423397A (en) 2002-12-16 2003-12-16 Growth of planar, non-polar A-plane gallium nitride by hydride vapor phase epitaxy
TW099131879A TWI433313B (zh) 2002-12-16 2003-12-16 藉氫化物汽相磊晶術生長平面、非極性ａ－平面氮化鎵
TW099131877A TWI445054B (zh) 2002-12-16 2003-12-16 藉由氫化物汽相磊晶術生長減少差排密度之非極性氮化鎵

Country Status (7)

Country Link
US (4) US7220658B2 (zh)
EP (1) EP1576671A4 (zh)
JP (3) JP4486506B2 (zh)
KR (2) KR101372698B1 (zh)
AU (2) AU2003259125A1 (zh)
TW (4) TW200423397A (zh)
WO (2) WO2004061969A1 (zh)

Families Citing this family (146)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5046475B2 (ja) 2002-04-15 2012-10-10 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 金属・有機化学気相成長によって成長した非極性ａ平面窒化ガリウム薄膜
US8809867B2 (en) * 2002-04-15 2014-08-19 The Regents Of The University Of California Dislocation reduction in non-polar III-nitride thin films
US7208393B2 (en) 2002-04-15 2007-04-24 The Regents Of The University Of California Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
JP4486506B2 (ja) 2002-12-16 2010-06-23 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア ハイドライド気相成長方法による転位密度の低い無極性窒化ガリウムの成長
US7186302B2 (en) 2002-12-16 2007-03-06 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US7427555B2 (en) 2002-12-16 2008-09-23 The Regents Of The University Of California Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
US7504274B2 (en) 2004-05-10 2009-03-17 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US7956360B2 (en) 2004-06-03 2011-06-07 The Regents Of The University Of California Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy
DE102005021099A1 (de) 2005-05-06 2006-12-07 Universität Ulm GaN-Schichten
US20070267722A1 (en) * 2006-05-17 2007-11-22 Amberwave Systems Corporation Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
EP2595176B1 (en) * 2005-05-17 2020-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
JP2006324465A (ja) * 2005-05-19 2006-11-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
TW200703463A (en) 2005-05-31 2007-01-16 Univ California Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
JP4857616B2 (ja) * 2005-06-17 2012-01-18 ソニー株式会社 ＧａＮ系化合物半導体層の形成方法、及び、ＧａＮ系半導体発光素子の製造方法
KR100623271B1 (ko) 2005-06-24 2006-09-12 한국과학기술연구원 갈륨망간나이트라이드 단결정 나노선의 제조방법
KR20080040709A (ko) * 2005-07-13 2008-05-08 더 리전츠 오브 더 유니버시티 오브 캘리포니아 반극성 질화물 박막들의 결함 감소를 위한 측방향 성장방법
KR101329388B1 (ko) 2005-07-26 2013-11-14 앰버웨이브 시스템즈 코포레이션 다른 액티브 영역 물질의 집적회로 집적을 위한 솔루션
US20070054467A1 (en) * 2005-09-07 2007-03-08 Amberwave Systems Corporation Methods for integrating lattice-mismatched semiconductor structure on insulators
US7638842B2 (en) 2005-09-07 2009-12-29 Amberwave Systems Corporation Lattice-mismatched semiconductor structures on insulators
JP2007103774A (ja) * 2005-10-06 2007-04-19 Showa Denko Kk Ｉｉｉ族窒化物半導体積層構造体およびその製造方法
KR20070042594A (ko) 2005-10-19 2007-04-24 삼성코닝 주식회사 편평한 측면을 갖는 ａ면 질화물 반도체 단결정 기판
JP5896442B2 (ja) * 2006-01-20 2016-03-30 国立研究開発法人科学技術振興機構 Ｉｉｉ族窒化物膜の成長方法
KR100695119B1 (ko) * 2006-01-20 2007-03-14 삼성코닝 주식회사 ＧａＮ 기판의 제조방법
JP4802315B2 (ja) * 2006-01-24 2011-10-26 シャープ株式会社 窒化物半導体発光素子とその製造方法
WO2007095137A2 (en) * 2006-02-10 2007-08-23 The Regents Of The University Of California Method for conductivity control of (al,in,ga,b)n
JP4888857B2 (ja) * 2006-03-20 2012-02-29 国立大学法人徳島大学 Ｉｉｉ族窒化物半導体薄膜およびｉｉｉ族窒化物半導体発光素子
WO2007112066A2 (en) 2006-03-24 2007-10-04 Amberwave Systems Corporation Lattice-mismatched semiconductor structures and related methods for device fabrication
KR20090018106A (ko) 2006-05-09 2009-02-19 더 리전츠 오브 더 유니버시티 오브 캘리포니아 비극성 및 준극성 (ａｌ, ｇａ, ｉｎ)ｎ을 위한 인-시츄 결함 감소 기술
WO2007145873A2 (en) 2006-06-05 2007-12-21 Cohen Philip I Growth of low dislocation density group-iii nitrides and related thin-film structures
EP2062290B1 (en) 2006-09-07 2019-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Defect reduction using aspect ratio trapping
US8421119B2 (en) * 2006-09-13 2013-04-16 Rohm Co., Ltd. GaN related compound semiconductor element and process for producing the same and device having the same
US20080070355A1 (en) * 2006-09-18 2008-03-20 Amberwave Systems Corporation Aspect ratio trapping for mixed signal applications
US7799592B2 (en) 2006-09-27 2010-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Tri-gate field-effect transistors formed by aspect ratio trapping
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
WO2008051503A2 (en) 2006-10-19 2008-05-02 Amberwave Systems Corporation Light-emitter-based devices with lattice-mismatched semiconductor structures
US7589360B2 (en) 2006-11-08 2009-09-15 General Electric Company Group III nitride semiconductor devices and methods of making
KR101192061B1 (ko) * 2006-11-14 2012-10-17 고꾸리쯔 다이가꾸 호우징 오사까 다이가꾸 ＧａＮ 결정의 제조 방법, ＧａＮ 결정, ＧａＮ 결정 기판, 반도체 장치 및 ＧａＮ 결정 제조 장치
US8193020B2 (en) 2006-11-15 2012-06-05 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition
CA2669228C (en) 2006-11-15 2014-12-16 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition
WO2008073400A1 (en) 2006-12-11 2008-06-19 The Regents Of The University Of California Transparent light emitting diodes
WO2008073414A1 (en) * 2006-12-12 2008-06-19 The Regents Of The University Of California Crystal growth of m-plane and semipolar planes of(ai, in, ga, b)n on various substrates
US8458262B2 (en) * 2006-12-22 2013-06-04 At&T Mobility Ii Llc Filtering spam messages across a communication network
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
JP2008308401A (ja) * 2007-05-17 2008-12-25 Mitsubishi Chemicals Corp Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板および半導体発光デバイス
JP4462289B2 (ja) 2007-05-18 2010-05-12 ソニー株式会社 半導体層の成長方法および半導体発光素子の製造方法
US20080296626A1 (en) * 2007-05-30 2008-12-04 Benjamin Haskell Nitride substrates, thin films, heterostructures and devices for enhanced performance, and methods of making the same
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
JP4825747B2 (ja) * 2007-07-13 2011-11-30 日本碍子株式会社 非極性面ｉｉｉ族窒化物単結晶の製造方法
JP2010536182A (ja) * 2007-08-08 2010-11-25 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 長波長放射を有する非極性ｉｉｉ窒化物発光ダイオード
JP2010538495A (ja) 2007-09-07 2010-12-09 アンバーウェーブ・システムズ・コーポレーション 多接合太陽電池
JP4944738B2 (ja) * 2007-11-13 2012-06-06 古河機械金属株式会社 ＧａＮ半導体基板の製造方法
JP2009234906A (ja) * 2008-03-03 2009-10-15 Mitsubishi Chemicals Corp 窒化物半導体結晶とその製造方法
US20100075107A1 (en) * 2008-05-28 2010-03-25 The Regents Of The University Of California Hexagonal wurtzite single crystal and hexagonal wurtzite single crystal substrate
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20090301388A1 (en) * 2008-06-05 2009-12-10 Soraa Inc. Capsule for high pressure processing and method of use for supercritical fluids
US8871024B2 (en) 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8097081B2 (en) 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8303710B2 (en) * 2008-06-18 2012-11-06 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20090320745A1 (en) * 2008-06-25 2009-12-31 Soraa, Inc. Heater device and method for high pressure processing of crystalline materials
US20100006873A1 (en) * 2008-06-25 2010-01-14 Soraa, Inc. HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
WO2010005914A1 (en) * 2008-07-07 2010-01-14 Soraa, Inc. High quality large area bulk non-polar or semipolar gallium based substrates and methods
WO2011044554A1 (en) 2009-10-09 2011-04-14 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US8673074B2 (en) * 2008-07-16 2014-03-18 Ostendo Technologies, Inc. Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
CN105762249A (zh) * 2008-08-04 2016-07-13 Soraa有限公司 使用非极性或半极性的含镓材料和磷光体的白光器件
US20100025727A1 (en) * 2008-08-04 2010-02-04 Benjamin Allen Haskell Enhanced spontaneous separation method for production of free-standing nitride thin films, substrates, and heterostructures
US10036099B2 (en) 2008-08-07 2018-07-31 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8323405B2 (en) * 2008-08-07 2012-12-04 Soraa, Inc. Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer
US8430958B2 (en) * 2008-08-07 2013-04-30 Soraa, Inc. Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
US8979999B2 (en) * 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8021481B2 (en) * 2008-08-07 2011-09-20 Soraa, Inc. Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
US8148801B2 (en) 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
JP5416212B2 (ja) 2008-09-19 2014-02-12 台湾積體電路製造股▲ふん▼有限公司 エピタキシャル層の成長によるデバイス形成
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
US8354679B1 (en) 2008-10-02 2013-01-15 Soraa, Inc. Microcavity light emitting diode method of manufacture
US20100295088A1 (en) * 2008-10-02 2010-11-25 Soraa, Inc. Textured-surface light emitting diode and method of manufacture
US8455894B1 (en) 2008-10-17 2013-06-04 Soraa, Inc. Photonic-crystal light emitting diode and method of manufacture
US8878230B2 (en) * 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US8461071B2 (en) * 2008-12-12 2013-06-11 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
JP5180050B2 (ja) * 2008-12-17 2013-04-10 スタンレー電気株式会社 半導体素子の製造方法
US20110100291A1 (en) * 2009-01-29 2011-05-05 Soraa, Inc. Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules
US8795430B2 (en) * 2009-03-02 2014-08-05 The Regents Of The University Of California Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates
JP5424363B2 (ja) * 2009-03-05 2014-02-26 国立大学法人大阪大学 集光照射基板を用いた半導体薄膜の製造方法、半導体薄膜の製造装置、および半導体薄膜の選択成長方法
CN102379046B (zh) 2009-04-02 2015-06-17 台湾积体电路制造股份有限公司 从晶体材料的非极性平面形成的器件及其制作方法
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US8306081B1 (en) 2009-05-27 2012-11-06 Soraa, Inc. High indium containing InGaN substrates for long wavelength optical devices
US8507304B2 (en) 2009-07-17 2013-08-13 Applied Materials, Inc. Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)
US20110027973A1 (en) * 2009-07-31 2011-02-03 Applied Materials, Inc. Method of forming led structures
US8148241B2 (en) * 2009-07-31 2012-04-03 Applied Materials, Inc. Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
US9293667B2 (en) 2010-08-19 2016-03-22 Soraa, Inc. System and method for selected pump LEDs with multiple phosphors
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US8435347B2 (en) 2009-09-29 2013-05-07 Soraa, Inc. High pressure apparatus with stackable rings
US8629065B2 (en) * 2009-11-06 2014-01-14 Ostendo Technologies, Inc. Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)
US8541252B2 (en) * 2009-12-17 2013-09-24 Lehigh University Abbreviated epitaxial growth mode (AGM) method for reducing cost and improving quality of LEDs and lasers
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US20110215348A1 (en) * 2010-02-03 2011-09-08 Soraa, Inc. Reflection Mode Package for Optical Devices Using Gallium and Nitrogen Containing Materials
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8740413B1 (en) 2010-02-03 2014-06-03 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
CN101931039B (zh) * 2010-08-23 2012-07-25 安徽三安光电有限公司 具有双层交错贯穿孔洞的氮化镓基发光二极管及其制作工艺
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
US8896235B1 (en) 2010-11-17 2014-11-25 Soraa, Inc. High temperature LED system using an AC power source
FR2968831B1 (fr) * 2010-12-08 2012-12-21 Soitec Silicon On Insulator Procedes de formation de materiaux massifs de nitrure iii sur des couches matricielles de croissance de nitrure de metal et structures formees par ces procedes
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8975165B2 (en) 2011-02-17 2015-03-10 Soitec III-V semiconductor structures with diminished pit defects and methods for forming the same
KR101253198B1 (ko) * 2011-07-05 2013-04-10 엘지전자 주식회사 무분극 이종 기판, 이를 이용한 질화물계 발광 소자 및 그 제조방법
US9488324B2 (en) 2011-09-02 2016-11-08 Soraa, Inc. Accessories for LED lamp systems
US8482104B2 (en) 2012-01-09 2013-07-09 Soraa, Inc. Method for growth of indium-containing nitride films
US8985794B1 (en) 2012-04-17 2015-03-24 Soraa, Inc. Providing remote blue phosphors in an LED lamp
US9142400B1 (en) 2012-07-17 2015-09-22 Stc.Unm Method of making a heteroepitaxial layer on a seed area
JP2014067869A (ja) * 2012-09-26 2014-04-17 Nobuyuki Akiyama ヘテロエピタキシャル単結晶の製造方法、ヘテロ接合太陽電池の製造方法、ヘテロエピタキシャル単結晶、ヘテロ接合太陽電池
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US9761763B2 (en) 2012-12-21 2017-09-12 Soraa, Inc. Dense-luminescent-materials-coated violet LEDs
US20140183579A1 (en) * 2013-01-02 2014-07-03 Japan Science And Technology Agency Miscut semipolar optoelectronic device
WO2014144993A1 (en) 2013-03-15 2014-09-18 Ostendo Technologies, Inc. Enhanced performance active pixel array and epitaxial growth method for achieving the same
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9410664B2 (en) 2013-08-29 2016-08-09 Soraa, Inc. Circadian friendly LED light source
DE102014116999B4 (de) * 2014-11-20 2025-09-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
CN104821352B (zh) * 2015-05-14 2018-09-25 上海世湖材料科技有限公司 一种InGaN/GaN量子阱界面中断生长结构及方法
CN107180743B (zh) * 2016-03-11 2019-12-27 中国科学院苏州纳米技术与纳米仿生研究所 一种制备半极性AlN模板的方法
US10134883B2 (en) * 2016-12-23 2018-11-20 Sixpoint Materials, Inc. Electronic device using group III nitride semiconductor and its fabrication method
JP7039684B2 (ja) * 2017-07-20 2022-03-22 スウェガン、アクチボラグ 高電子移動度トランジスタのためのヘテロ構造及びその製造方法
CN108385161A (zh) * 2018-02-07 2018-08-10 赛富乐斯股份有限公司 氮化镓晶体制造方法和衬底
JP6585799B1 (ja) * 2018-10-15 2019-10-02 昭和電工株式会社 ＳｉＣ基板の評価方法及びＳｉＣエピタキシャルウェハの製造方法
US11949039B2 (en) 2018-11-05 2024-04-02 King Abdullah University Of Science And Technology Optoelectronic semiconductor device with nanorod array
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
JP7244745B2 (ja) * 2019-02-15 2023-03-23 日亜化学工業株式会社 発光装置、及び、光学装置
CN110047979B (zh) * 2019-02-20 2020-10-09 华灿光电(苏州）有限公司 紫外发光二极管外延片及其制造方法
JP6780805B1 (ja) * 2019-11-01 2020-11-04 三菱電機株式会社 化合物半導体の結晶欠陥観察方法
EP4104201A1 (en) 2020-02-11 2022-12-21 SLT Technologies, Inc. Improved group iii nitride substrate, method of making, and method of use
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
US12091771B2 (en) 2020-02-11 2024-09-17 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153010A (en) 1997-04-11 2000-11-28 Nichia Chemical Industries Ltd. Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device
JPH0754806B2 (ja) * 1987-01-20 1995-06-07 日本電信電話株式会社 化合物半導体単結晶膜の成長方法
JP2809692B2 (ja) * 1989-04-28 1998-10-15 株式会社東芝 半導体発光素子およびその製造方法
JPH033233A (ja) * 1989-05-30 1991-01-09 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体単結晶薄膜の成長方法
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US6440823B1 (en) * 1994-01-27 2002-08-27 Advanced Technology Materials, Inc. Low defect density (Ga, Al, In)N and HVPE process for making same
JPH111399A (ja) * 1996-12-05 1999-01-06 Lg Electron Inc 窒化ガリウム半導体単結晶基板の製造方法並びにその基板を用いた窒化ガリウムダイオード
KR100239497B1 (ko) 1997-06-13 2000-02-01 구자홍 질화갈륨 단결정 기판의 제조방법
US5926726A (en) * 1997-09-12 1999-07-20 Sdl, Inc. In-situ acceptor activation in group III-v nitride compound semiconductors
US6608327B1 (en) * 1998-02-27 2003-08-19 North Carolina State University Gallium nitride semiconductor structure including laterally offset patterned layers
US6051849A (en) * 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US6294440B1 (en) * 1998-04-10 2001-09-25 Sharp Kabushiki Kaisha Semiconductor substrate, light-emitting device, and method for producing the same
US6180270B1 (en) * 1998-04-24 2001-01-30 The United States Of America As Represented By The Secretary Of The Army Low defect density gallium nitride epilayer and method of preparing the same
US6218280B1 (en) * 1998-06-18 2001-04-17 University Of Florida Method and apparatus for producing group-III nitrides
TW417315B (en) * 1998-06-18 2001-01-01 Sumitomo Electric Industries GaN single crystal substrate and its manufacture method of the same
JP3788037B2 (ja) * 1998-06-18 2006-06-21 住友電気工業株式会社 ＧａＮ単結晶基板
JP2000156544A (ja) * 1998-09-17 2000-06-06 Matsushita Electric Ind Co Ltd 窒化物半導体素子の製造方法
JP3171180B2 (ja) * 1999-02-04 2001-05-28 日本電気株式会社 気相エピタキシャル成長法、半導体基板の製造方法、半導体基板及びハイドライド気相エピタキシー装置
US6177057B1 (en) * 1999-02-09 2001-01-23 The United States Of America As Represented By The Secretary Of The Navy Process for preparing bulk cubic gallium nitride
JP4288743B2 (ja) * 1999-03-24 2009-07-01 日亜化学工業株式会社 窒化物半導体の成長方法
JP3587081B2 (ja) * 1999-05-10 2004-11-10 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体発光素子
US6268621B1 (en) * 1999-08-03 2001-07-31 International Business Machines Corporation Vertical channel field effect transistor
US6812053B1 (en) * 1999-10-14 2004-11-02 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
US6566231B2 (en) * 2000-02-24 2003-05-20 Matsushita Electric Industrial Co., Ltd. Method of manufacturing high performance semiconductor device with reduced lattice defects in the active region
JP3557441B2 (ja) 2000-03-13 2004-08-25 日本電信電話株式会社 窒化物半導体基板およびその製造方法
JP3946427B2 (ja) * 2000-03-29 2007-07-18 株式会社東芝 エピタキシャル成長用基板の製造方法及びこのエピタキシャル成長用基板を用いた半導体装置の製造方法
TW518767B (en) * 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP3680751B2 (ja) * 2000-03-31 2005-08-10 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
JP3968968B2 (ja) * 2000-07-10 2007-08-29 住友電気工業株式会社 単結晶ＧａＮ基板の製造方法
JP4556300B2 (ja) * 2000-07-18 2010-10-06 ソニー株式会社 結晶成長方法
JP2002076521A (ja) 2000-08-30 2002-03-15 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体発光素子
JP4154558B2 (ja) * 2000-09-01 2008-09-24 日本電気株式会社 半導体装置
US6635901B2 (en) * 2000-12-15 2003-10-21 Nobuhiko Sawaki Semiconductor device including an InGaAIN layer
US6599362B2 (en) 2001-01-03 2003-07-29 Sandia Corporation Cantilever epitaxial process
US6773504B2 (en) * 2001-04-12 2004-08-10 Sumitomo Electric Industries, Ltd. Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
JP3985462B2 (ja) * 2001-04-26 2007-10-03 日亜化学工業株式会社 窒化物半導体基板、及びそれを用いた窒化物半導体素子の製造方法
KR100679377B1 (ko) * 2001-10-26 2007-02-05 암모노 에스피. 제트오. 오. 질화물 벌크 단결정층을 사용한 발광 디바이스 구조
DE60234856D1 (de) * 2001-10-26 2010-02-04 Ammono Sp Zoo Substrat für epitaxie
US6617261B2 (en) * 2001-12-18 2003-09-09 Xerox Corporation Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates
JP5046475B2 (ja) * 2002-04-15 2012-10-10 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 金属・有機化学気相成長によって成長した非極性ａ平面窒化ガリウム薄膜
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
JP4201541B2 (ja) * 2002-07-19 2008-12-24 豊田合成株式会社 半導体結晶の製造方法及びｉｉｉ族窒化物系化合物半導体発光素子の製造方法
US6876009B2 (en) * 2002-12-09 2005-04-05 Nichia Corporation Nitride semiconductor device and a process of manufacturing the same
US7427555B2 (en) * 2002-12-16 2008-09-23 The Regents Of The University Of California Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
JP4486506B2 (ja) * 2002-12-16 2010-06-23 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア ハイドライド気相成長方法による転位密度の低い無極性窒化ガリウムの成長
CN1894771B (zh) 2003-04-15 2012-07-04 加利福尼亚大学董事会 非极性(Al,B,In,Ga)N量子阱
US6847057B1 (en) 2003-08-01 2005-01-25 Lumileds Lighting U.S., Llc Semiconductor light emitting devices

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