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SG75844A1 - Crystal growth method for group-iii nitride and related compound semiconductors - Google Patents

Crystal growth method for group-iii nitride and related compound semiconductors

Info

Publication number
SG75844A1
SG75844A1 SG1998001054A SG1998001054A SG75844A1 SG 75844 A1 SG75844 A1 SG 75844A1 SG 1998001054 A SG1998001054 A SG 1998001054A SG 1998001054 A SG1998001054 A SG 1998001054A SG 75844 A1 SG75844 A1 SG 75844A1
Authority
SG
Singapore
Prior art keywords
group
crystal growth
iii nitride
growth method
compound semiconductors
Prior art date
Application number
SG1998001054A
Inventor
Zhang Xiong
Chua Soo-Jin
Original Assignee
Univ Singapore
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Singapore filed Critical Univ Singapore
Priority to SG1998001054A priority Critical patent/SG75844A1/en
Priority to PCT/SG1999/000039 priority patent/WO1999059195A1/en
Publication of SG75844A1 publication Critical patent/SG75844A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H10P14/24—
    • H10P14/2921—
    • H10P14/3216—
    • H10P14/3252—
    • H10P14/3416—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
SG1998001054A 1998-05-13 1998-05-13 Crystal growth method for group-iii nitride and related compound semiconductors SG75844A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SG1998001054A SG75844A1 (en) 1998-05-13 1998-05-13 Crystal growth method for group-iii nitride and related compound semiconductors
PCT/SG1999/000039 WO1999059195A1 (en) 1998-05-13 1999-05-11 Crystal growth method for group-iii nitride and related compound semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG1998001054A SG75844A1 (en) 1998-05-13 1998-05-13 Crystal growth method for group-iii nitride and related compound semiconductors

Publications (1)

Publication Number Publication Date
SG75844A1 true SG75844A1 (en) 2000-10-24

Family

ID=20429999

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1998001054A SG75844A1 (en) 1998-05-13 1998-05-13 Crystal growth method for group-iii nitride and related compound semiconductors

Country Status (2)

Country Link
SG (1) SG75844A1 (en)
WO (1) WO1999059195A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG94712A1 (en) 1998-09-15 2003-03-18 Univ Singapore Method of fabricating group-iii nitride-based semiconductor device
GB2362263A (en) * 2000-05-12 2001-11-14 Juses Chao Amorphous and polycrystalline growth of gallium nitride-based semiconductors
US6495867B1 (en) * 2000-07-26 2002-12-17 Axt, Inc. InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire
GB2378039B (en) * 2001-07-27 2003-09-17 Juses Chao AlInGaN LED Device
JP2007123824A (en) 2005-09-27 2007-05-17 Toyoda Gosei Co Ltd Electronic device using group III nitride compound semiconductor
US7547908B2 (en) 2006-12-22 2009-06-16 Philips Lumilieds Lighting Co, Llc III-nitride light emitting devices grown on templates to reduce strain
US7951693B2 (en) * 2006-12-22 2011-05-31 Philips Lumileds Lighting Company, Llc III-nitride light emitting devices grown on templates to reduce strain
US7534638B2 (en) 2006-12-22 2009-05-19 Philips Lumiled Lighting Co., Llc III-nitride light emitting devices grown on templates to reduce strain
JP2017152653A (en) * 2016-02-26 2017-08-31 ウシオ電機株式会社 Semiconductor light emitting device manufacturing method, semiconductor light emitting device wafer manufacturing method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2985908B2 (en) * 1991-10-12 1999-12-06 日亜化学工業株式会社 Crystal growth method of gallium nitride based compound semiconductor
JPH07235692A (en) * 1993-12-30 1995-09-05 Sony Corp Compound semiconductor device and method of forming the same
JP3771952B2 (en) * 1995-06-28 2006-05-10 ソニー株式会社 Method for growing single crystal III-V compound semiconductor layer, method for manufacturing light emitting element, and method for manufacturing transistor

Also Published As

Publication number Publication date
WO1999059195A1 (en) 1999-11-18

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