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CN1894771B - 非极性(Al,B,In,Ga)N量子阱 - Google Patents

非极性(Al,B,In,Ga)N量子阱 Download PDF

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CN1894771B
CN1894771B CN2003801109995A CN200380110999A CN1894771B CN 1894771 B CN1894771 B CN 1894771B CN 2003801109995 A CN2003801109995 A CN 2003801109995A CN 200380110999 A CN200380110999 A CN 200380110999A CN 1894771 B CN1894771 B CN 1894771B
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quantum well
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polar
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CN1894771A (zh
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迈克尔·D·科雷文
斯蒂芬·P·登巴尔斯
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Japan Science and Technology Agency
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University of California San Diego UCSD
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Abstract

本发明公开一种制作非极性a-平面GaN/(Al，B，In，Ga)N多量子阱(MQW)的方法。a-平面MQW通过有机金属化学气相沉积(MOCVD)在适当的GaN/蓝宝石模板层上生长，阱宽度范围介于20
Figure B038B0999520060725A000011
至70
Figure B038B0999520060725A000012
之间。来自a-平面MQW的室温光致发光(PL)发射能量遵循一使用自相容泊松薛定谔(self-consistent Poisson-Schrodinger，SCPS)计算来建模的方阱趋势。在a-平面MQW的量子阱宽度为52
Figure B038B0999520060725A000013
时获得最佳PL发射强度。

Description

非极性(Al,B,In,Ga)N量子阱
相关申请案交叉参考
本申请案是下列同在申请中且共同受让的专利申请案的部分接续申请案：
由Benjamin A.Haskell、Michael D.Craven、Paul T.Fini、Steven P.DenBaars、JamesS.Speck及Shuji Nakamura于2003年7月15日提出申请且名称为“通过氢化物气相外延来生长位错密度减小的非极性氮化镓(GROWTH OF REDUCED DISLOCATIONDENSITY NON-POLAR GALLIUM NITRIDE BY HYDRIDE VAPOR PHASEEPITAXY)”的第PCT/US03/21918号国际专利申请案(代理档号为30794.93-WO-U1)，该申请案主张基于由Benjamin A.Haskell、Michael D.Craven、Paul T.Fini、Steven P.DenBaars、James S.Speck及Shuji Nakamura于2002年12月16日提出申请且名称为“通过氢化物气相外延来生长位错密度减小的非极性氮化镓(GROWTH OF REDUCEDDISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE BY HYDRIDE VAPORPHASE EPITAXY)”的第60/433,843号美国临时专利申请案(代理档号为30794.93-US-P1)的优先权；
由Benjamin A.Haskell、Paul T.Fini、Shigemasa Matsuda、Michael D.Craven、StevenP.DenBaars、James S.Speck及Shuji Nakamura于2003年7月15日提出申请且名称为“通过氢化物气相外延来生长平坦的非极性A平面氮化镓(GROWTH OF PLANAR，NON-POLAR A-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASEEPITAXY)”的第PCT/US03/21916号国际专利申请案(代理档号为30794.94-W0-U1)，该申请主张基于由Benjamin A.Haskell、Paul T.Fini、Shigemasa Matsuda、Michael D.Craven、Steven P.DenBaars、James S.Speck及Shuji Nakamura于2002年12月16日提出申请且名称为“用于通过氢化物气相外延来生长平坦的非极性A平面氮化镓的技术(TECHNIQUE FOR THE GROWTH OF PLANAR，NON-POLAR A-PLANEGALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY)”的第60/433,844号美国临时专利申请案(代理档号为30794.94-US-P1)的优先权；
由Michael D.Craven及James S.Speck于2003年4月15日提出申请且名称为“通过有机金属化学气相沉积生长的非极性A平面氮化镓薄膜(NON-POLAR A-PLANEGALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICALVAPOR DEPOSITION)”的第10/413,691号美国实用新型专利申请案(代理档号为30794.100-US-U1)，该申请案主张基于由Michael D.Craven、Stacia Keller、Steven P.DenBaars、Tal Margalith、James S.Speck、Shuji Nakamura及Umesh K.Mishra于2002年4月15日提出申请且名称为“基于非极性氮化镓的薄膜及异质结构材料(NON-POLAR GALLIUM NITRIDE BASED THIN FILMS ANDHETEROSTRUCTURE MATERIALS)”的第60/372,909号美国临时专利申请案(代理档号为30794.95-US-P1)的优先权；
由Michael D.Craven、Stacia Keller、Steven P.DenB aars、Tal Margalith、James S.Speck、Shuji Nakamura及Umesh K.Mishra于2003年4月15日提出申请且名称为“非极性(Al，B，In，Ga)N量子阱及异质结构材料与装置(NON-POLAR(Al，B，In，Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES)”的第10/413,690号美国实用新型专利申请案(代理档号为30794.101-US-U1)，该申请案主张基于由Michael D.Craven、Stacia Keller、Steven P.DenB aars、Tal Margalith、JamesS.Speck、Shuji Nakamura及Umesh K.Mishra于2002年4月15日提出申请且名称为“基于非极性氮化镓的薄膜及异质结构材料(NON-POLAR GALLIUM NITRIDE BASEDTHIN FILMS AND HETEROSTRUCTURE MATERIALS)”的第60/372,909号美国临时专利申请案(代理档号为30794.95-US-P1)的优先权；
由Michael D.Craven、Stacia Keller、Steven P.DenBaars、Tal Margalith、James S.Speck、Shuji Nakamura及Umesh K.Mishra于2003年4月15日提出申请且名称为“非极性氮化镓薄膜中位错的减少(DISLOCATION REDUCTION IN NON-POLARGALLIUM NITRIDE THIN FILMS)”的第10/413,913号美国实用新型专利申请案(代理档号为30794.102-US-U1)，该申请案主张基于由Michael D.Craven、Stacia Keller、Steven P.DenB aars、Tal Margalith、James S.Speck、Shuji Nakamura及Umesh K.Mishra于2002年4月15日提出申请且名称为“基于非极性氮化镓的薄膜及异质结构材料(NON-POLAR GALLIUM NITRIDE BASED THIN FILMS ANDHETEROSTRUCTURE MATERIALS)”的第60/372,909号美国临时专利申请案(代理档号为30794.95-US-P1)的优先权；
所有这些申请案均以引用方式并入本文中。
技术领域
本发明涉及半导体材料、方法及装置，且更具体而言涉及非极性(Al，B，In，Ga)N量子阱。
背景技术
(注意：本申请案引用多个不同的出版物，这些出版物在本说明书中自始至终由一个或多个参考编号指示。这些不同出版物按照这些参考编号排序而形成的列表可见于下文中标题为“参考文献”的部分中。所有这些出版物均以引用方式并入本文中。)
目前，现有技术水平的基于氮化物的外延装置结构是沿在热力学上稳定的纤维锌矿(Al，Ga，In)N单位晶胞的极性c轴生长。因氮化物[1]具有强的极化常数，故异质结构内的界面极化间断性与会产生强内部电场的固定片电荷相关联。这些“内建”的极化感应电场会限制采用量子阱有源区的光电装置的性能。具体而言，由内部场引起的电子与空穴波动函数在空间上的分离，即量子约束斯塔克效应(QCSE)，会减小振荡器跃迁强度且最终限制量子阱[2]的再结合效率。沿非极化方向生长氮化物晶体会提供一种制成不受这些强极化感应电场影响的基于氮化物的量子结构的有效方法，这是因为极轴位于薄膜的生长平面内。
最初是通过使用铝酸锂衬底进行等离子体辅助的分子束外延(MBE)来证实(
Figure S038B0999520060725D000031
)m-平面GaN/AlGaN多量子阱(MQW)结构[3]。自从该第一次证实以后，又将通过氢化物气相外延(HVPE)而生长的独立m-平面GaN衬底用于通过MBE[4]及有机金属化学气相沉积(MOCVD)[5]两种方式进行的后续外延GaN/AlGaN MQW生长。除m-平面外，还对通过MBE[6]及MOCVD[7]两种方式在r-平面蓝宝石衬底上生长的a-平面GaN/AlGaN MQW结构进行了研究。这些结构的光学特性已表明，非极性量子阱不受极化感应电场的影响。
本发明阐述a-平面GaN/AlGaN MQW发射对GaN量子阱宽度的相依性。此外，对通过MOCVD生长的a-平面及c-平面MQW的GaN阱宽度范围的研究还表明了非极性取向所独有的发射特征。
发明内容
本发明阐述一种制作非极性a-平面GaN/(Al，B，In，Ga)N多量子阱(MQW)的方法。就此而言，a-平面MQW通过有机金属化学气相沉积(MOCVD)在适当的GaN/蓝宝石模板层上生长，阱宽度范围介于
Figure S038B0999520060725D000032
至之间。来自a-平面MQW的室温光致发光(PL)发射能量遵循一使用自相容泊松薛定谔(self-consistentPoisson-Schrodinger，SCPS)计算来建模的方阱趋势。在a-平面MQW的量子阱宽度为
Figure S038B0999520060725D000034
时获得最佳PL发射强度。
附图说明
现参见图式，在所有图式中，相同的参考标记均代表对应的部分：
图1为一图解说明一种根据本发明一较佳实施例用于形成非极性a-平面GaN/(Al，B，In，Ga)N量子阱的方法的各步骤的流程图。
图2为一对同时再生长的a-平面(
Figure S038B0999520060725D000035
的GaN)/(
Figure S038B0999520060725D000036
的Al0.16Ga0.84N)及c-平面(的GaN)/(的Al0.16Ga0.84N)MQW堆叠进行高分辨率x射线衍射(HRXRD)扫描的曲线图。除量子阱尺寸外，HRXRD曲线还提供贯穿半峰全宽(FWHM)卫星峰值的MQW界面质量的定性比较。
图3(a)及(b)为阱宽度范围从至的(a)a-平面及(b)c-平面GaN/(的Al0.16Ga0.84N)MQW的室温PL谱的曲线图。每一曲线上的垂直灰线均表示GaN块材层的能带边缘。
图4为一表示a-平面与c-平面MQW的温室PL发射能量对阱宽度的相依性的曲线图。虚线为对一平带GaN/(的Al0.16Ga0.84N)MQW进行自相容泊松薛定谔(SCPS)计算的结果。对于这两个生长取向而言，发射能量均随着阱宽度的增加而减小，但在一临界阱宽度以上，c-平面MQW发射能量红移至GaN层的能带边缘以下。
图5为在a-平面及c-平面两种生长取向情况下归一化室温PL强度随GaN量子阱宽度变化的曲线图。每一种取向的数据均分别归一化，因此无法在a-平面与c-平面MQW的相对强度之间进行直接比较。
具体实施方式
在下文对较佳实施例的说明中，将参照附图，这些附图构成本发明的一部分且以举例说明方式显示其中可实践本发明的具体实施例。
应了解，亦可使用其它实施例且可作出结构改变，此并不背离本发明的范围。
概述
基于非极性氮化物的半导体晶体不会受到能支配基于极性氮化物的量子结构特性的极化感应电场的影响。由于纤维锌矿氮化物单位晶胞的极化轴与极性氮化物晶体的生长方向平行对齐，因此在极性氮化物异质结构中存在内部电场。这些“内建”的场对现有技术水平的光电及电子装置存在有害的影响。而通过沿非极性方向生长氮化物晶体，就能实现不受极化感应电场影响的量子结构。由于一给定量子阱的能带会根据生长方向而变化，因此必须应用不同的科学原理来设计高性能非极性量子阱。本发明阐述用于制作最佳化非极性量子阱的设计原理。
过程步骤
图1为一流程图，其图解说明一种根据本发明一较佳实施例用于形成量子阱的方法的各步骤。此方法的各步骤会在a-平面GaN/r-平面蓝宝石模板层上生长非极性a-平面GaN/AlGaN MQW。
方块100代表将一蓝宝石衬底装入一垂直且紧密排列的淋浴头型MOCVD反应器中。对此步骤而言，可从商家购得表面晶体取向处于蓝宝石r-平面的+/-2°内的开盒即用的蓝宝石衬底。不需要在将蓝宝石衬底装入MOCVD反应器之前实施离场制备，但可使用对蓝宝石衬底的离场清理作为一预防措施。
方块102代表在高温(＞1000℃)下就地对蓝宝石衬底进行退火，这会提高衬底表面在原子规模上的质量。在退火后，降低衬底温度以便进行随后的低温成核层沉积。
方块104代表沉积一薄的低温、低压、基于氮化物的成核层作为蓝宝石衬底上的缓冲层。此类层通常用于c-平面(0001)氮化物半导体的异质外延生长。在该较佳实施例中，所述成核层是由(但不限于)在约400-900℃及1个大气压下沉积的1-100纳米(nm)的GaN构成。
在沉积所述成核层后，使反应器温度升至一高温，且方块106代表在沉积在衬底上的成核层上一次或多次生长经无意掺杂(UID)的a-平面GaN层至约1.5μm的厚度。高温生长条件包括(但不限于)约1100℃的生长温度、0.2个大气压或更低的生长压力、每分钟30μmol的Ga流量及每分钟40,000μmol的N流量，由此提供约等于1300的V/III比率。在该较佳实施例中，用作III族及V族源的前驱物为三甲基镓、氨及乙硅烷，但亦可使用替代前驱物。另外，在不偏离本发明范围的情况下，可改变生长条件来产生不同的生长速率，例如每秒5与
Figure S038B0999520060725D000051
之间。
在完成高温生长步骤后，方块108代表在氮气过压情况下对外延a-平面GaN层进行冷却。
最后，方块110代表正在a-平面GaN层上生长的一个或多个(Al，B，In，Ga)N层。较佳地，这些生长层包括以～2×1018cm-3的Si浓度掺杂的～
Figure S038B0999520060725D000052
Al0.16Ga0.84N障壁层。此外，可视需要重复上述方块。在一个实施例中，将方块110重复10次来形成宽度范围从约
Figure S038B0999520060725D000053
至约的UID GaN阱。
实验结果
对于非极性氮化物量子阱而言，存在平能带分布但不存在QCSE。因此，与极性量子阱相比，预计非极性量子阱发射会遵循不同的趋势。主要是，非极性量子阱表现出提高的再结合效率，且可自更厚的量子阱进行强发射。此外，最佳非极性量子阱发射所需的量子阱宽度大于极性量子阱发射所需的量子阱宽度。
下文阐述非极性GaN/(～Al0.16Ga0.84N)MQW与c-平面结构相比较的随量子阱宽度变化的室温PL特性。为实现此目的，通过MOCVD以介于约
Figure S038B0999520060725D000056
至之间的阱宽度在适当的GaN/蓝宝石模板层上同时再生长10个周期的a-平面及c-平面MQW结构。
对在三重轴模式中使用CuKα1辐射以Philips MRD XPERT PROTM衍射仪所作的HRXRD测量[9]进行的运动学分析证实了量子阱尺寸及障壁层成分。借助使用He-Cd激光器(激发功率密度～10W/cm2)的325nm线进行室温连续波(c-w)PL谱测量来表征MQW发射特性。
图2为一对同时再生长的a-平面(
Figure S038B0999520060725D000058
的GaN/的Al0.16Ga0.84N)及c-平面(
Figure S038B0999520060725D0000511
的GaN/
Figure S038B0999520060725D0000512
的Al0.16Ga0.84N)MQW堆叠进行的HRXRD扫描的曲线图。除量子阱尺寸外，HRXRD分布还提供贯穿FWHM卫星峰值的MQW界面质量的定性比较。
分别在GaN()及(0004)反射周围对所述a-平面及c-平面结构进行同轴2θ-ω扫描。对x射线分布进行的分析得出了AlxGa1-xN障壁层的铝成分x及量子阱尺寸(阱及障壁层厚度)二者，对于同时生长的a-平面及c-平面采样，其相差不超过7％，此表明一质量传输受限制的MOCVD生长状态。除来自GaN层的强反射外，这两个HRXRD分布还表明超晶格(SL)峰值向外达到二阶。SL峰值的FWHM可为量子阱界面质量提供一定性量度[10]；因此，通过图2中所示的扫描，可断定a-平面MQW的界面质量差于c-平面样本的界面质量。尽管a-GaN模板中贯穿MQW的穿透位错密度很大，然而对a-平面MQW结构质量的分析(阐述于[9]中)仍表明存在一明显的界面。与c-平面相比的穿透位错(TD)密度升高且a-平面生长的表面粗糙度增大很可能是a-平面MQW界面粗糙度变大及SL峰值变宽的原因。另外，据估计，a-平面TD密度大于c-平面TD密度约两个数量级。
图3(a)及(b)为阱宽度范围从至的(a)a-平面及(b)c-平面GaN/(
Figure S038B0999520060725D000063
的Al0.16Ga0.84N)MQW的室温PL谱的曲线图。每一曲线上的垂直灰线均表示GaN块材的能带边缘。
不管晶体取向如何，当量子局限效应减小时，MQW PL的发射均会随着量子阱宽度的增加而移至更长的波长(等效地，PL发射减少)。
具体而言，随着阱宽度的增加，a-平面MQW的发射能量稳定地接近GaN块材的能带边缘但不会红移出GaN块材的能带边缘。UID a-GaN薄膜的电阻性质会阻止在室温下进行能带边缘发射，从而如在图3(a)中所观察到仅自量子阱发射。
相反地，当GaN量子阱宽度从
Figure S038B0999520060725D000064
增加至时，c-平面MQW发射能量红移至GaN能带边缘以下。对于宽于的极性GaN阱而言，只检测到自下伏GaN进行的PL发射。c-GaN缓冲发射的出现意味着c-平面模板具有一低于a-平面模板的固有点缺陷密度。而且，在非极性及极性MQW二者中均观察到黄带发射；因此，深陷阱能级的起源很可能是保持a-平面形态所需的生长条件而不是非极性取向的特征。
PL发射谱的这两个主要特征-发射能量及发射强度-分别在图4及5中归纳成随量子阱的宽度而变化。因存在量子局限效应，发射能量随阱宽度的增大而减小。
图4为一a-平面及c-平面MQW的室温PL发射能量对阱宽度的相依性的曲线图。对于所有被研究的量子阱宽度而言，a-平面MQW发射均会相对于GaN块材能带边缘蓝移，且当量子局限效应使量子阱的基态能量升高时，所述蓝移量会随阱宽度的减小而增加。使用如图4中虚线所示的方阱SCPS计算[11]来对a-平面MQW的发射能量趋势进行精确地建模。理论与实验之间的一致性证实，非极性MQW的发射不受极化感应电场影响。尽管存在此种一致性，然而理论模型会随着量子阱宽度的减小而逐渐将实验数据估高15至35meV。这种偏离的趋势可通过激子结合能量随GaN/AlGaN MQW的阱宽度的减小而预期增加来解释[12，13]，因为在SCPS模型中未虑及激子结合能量。相反地，图4显示c-平面MQW发射随阱宽度的增加的显著红移这是一种普遍观察到的取决于OCSE的趋势[14-18]。具体而言，实验性c-平面MQW发射能量趋势与由Grandjean等人所提出的极性QW基态的模型[13]相一致。通过对所述实验数据进行内插，GaN阱宽度大于～的c-平面MQW的发射低于GaN块材能带边缘。增加阱厚度会增加量子阱内的载流子的空间间隔并降低再结合效率直至再也观察不到MQW发射(阱宽于)为止。先前报道的a-平面(
Figure S038B0999520060725D000069
GaN)/(Al0.25Ga0.75N)MQW的发射[9]提供了非极性MQW量子效率提高的额外证据。
图5为在a-平面及c-平面两种生长取向情况下归一化的室温PL强度随GaN量子阱宽度变化的曲线图。每一种取向的数据均分别归一化，因此无法在a-平面与c-平面MQW的相对强度之间进行直接比较。因模板层的微结构质量明显不同，故a-与c-平面MQW发射强度之间的直接比较将不具有说服力。
最大a-平面MQW发射强度与一
Figure S038B0999520060725D000071
的最佳量子阱宽度相关联，而最大c-平面发射强度则是在
Figure S038B0999520060725D000072
宽的阱情况下观察到的。由于QCSE，最佳发射强度是从相对薄的极性GaN量子阱(
Figure S038B0999520060725D000073
)获得-此视AlGaN障壁层的厚度及成分而定[13]。厚阱中再结合效率的降低及因异质界面处非辐射性跃迁而引起的再结合的减少与薄阱[19]外的电子波动函数扩展之间的平衡决定最佳c-平面阱宽度。相反地，因非极性MQW不会经受QCSE，故预计最佳阱宽度取决于材料质量、界面粗糙度及激子的玻尔半径。虽然a-平面结构的界面粗糙度大于c-平面，但非极性取向的有利效果是明显的。还应注意，随着非极性表面及界面质量的提高，最佳阱宽度将很可能偏离对于这些样本所观察到的最佳宽度。
参考文献
下列参考文献以引用方式并入本文中：
1.F.Bernardini，V.Fiorentini，and D.Vanderbilt，Phys.Rev.B 56，R10024(1997).
2.T.Takeuchi，H.Amano，and I.Akasaki，Jpn.J.Appl.Phys.39，413(2000).
3.P.Waltereit，O.Brandt，A.Trampert，H.T.Grahn，J.Menniger，M.Ramsteiner，M.Reiche，and K.H.Ploog，Nature 406，865(2000).
4.A.Bhattacharyya，I.Friel，S.Iyer，T.C.Chen，W.Li，J.Cabalu，Y.Fedyunin，K.F.Ludwig，T.D.Moustakas，H.P.Maruska，D.W.Hill，J.J.Gallagher，M.C.Chou，and B.Chai，J.Cryst.Growth 251，487(2003).
5.E.Kuokstis，C.Q.Chen，M.E.Gaevski，W.H.Sun，J.W.Yang，G.Simin，M.A.Khan，H.P.Maruska，D.W.Hill，M.C.Chou，J.J.Gallagher，and B.Chai，Appl.Phys.Lett.81，4130(2002).
6.H.M.Ng，Appl.Phys.Lett.80，4369(2002).
7.M.D.Craven，S.H.Lim，F.Wu，J.S.Speck，and S.P.DenBaars，Appl.Phys.Lett.81，469(2002).
8.B.P.Keller，S.Keller，D.Kapolnek，W.N.Jiang，Y.F.Wu，H.Masui，X.Wu，B.Heying，J.S.Speck，U.K.Mishra，and S.P.Denbaars，J.Electron.Mater.24，1707(1995).
9.M.D.Craven，P.Waltereit，F.Wu，J.S.Speck，and S.P.DenBaars，Jpn.J.Appl.Phys.，Part 242，L235(2003).
10.G.Bauer and W.Richter，Optical characterization of epitaxial semiconductorlayers(Springer Verlag，Berlin，New York，1996).
11.I.H.Tan，G.L.Snider，L.D.Chang，and E.L.Hu，J.Appl.Phys.68，4071(1990).
12.P.Bigenwald，P.Lefebvre，T.Bretagnon，and B.Gil，Phys.Stat.Sol.B 216，371(1999).
13.N.Grandjean，B.Damilano，S.Dalmasso，M.Leroux，M.Laugt，and J.Massies，J.Appl.Phys.86，3714(1999).
14.N.Grandjean，J.Massies，and M.Leroux，Appl.Phys.Lett.74，2361(1999).
15.1.Jin Seo，H.Kollmer，J.Off，A.Sohmer，F.Scholz，and A.Hangleiter，Phys.Rev.B 57，R9435(1998).
16.R.Langer，J.Simon，V.Ortiz，N.T.Pelekanos，A.Barski，R.Andre，and M.Godlewski，Appl.Phys.Lett.74，3827(1999).
17.G.Traetta，A.Passaseo，M.Longo，D.Cannoletta，R.Cingolani，M.Lomascolo，A.Bonfiglio，A.Di Carlo，F.Delia Sala，P.Lugli，A.Botchkarev，and H.Morkoc，Physica E7，929(2000).
18.M.Leroux，N.Grandjean，M.Laugt，J.Massies，B.Gil，P.Lefebvre，and P.Bigenwald，Phys.Rev.B 58，R13371(1998).
19.A.Kinoshita，H.Hirayama，P.Riblet，M.Ainoya，A.Hirata，and Y.Aoyagi，MRSInternet J.Nitride Semicond.Res.5，Wl 1.32(2000).
结论
就此结束对本发明较佳实施例的说明。下文将阐述用于实现本发明的一些替代实施例。
例如，在替代实施例中可使用非极性(Al，In，Ga)N量子阱及异质结构设计和MOCVD生长条件的变化形式。此外，除所生长的量子阱数量外，各层的特定厚度及成分均为量子阱结构设计所固有的变量且可用于本发明的各替代实施例中。此外，特定MOCVD生长条件决定量子阱结构层的尺寸及成分。就此而言，MOCVD生长条件依赖于反应器且可因特定反应器设计而异。对于目前在工业及学术中所使用的各种各样的反应器设计，该过程可具有诸多种变化形式。
诸如生长温度、生长压力、V/III比率、前驱物流量及源材料等条件也可存在变化形式，此并不背离本发明的范围。控制界面质量是该过程的另一重要方面且与特定反应器设计的流量切换能力直接相关。生长条件的不断优化将使对上述集成量子阱层的成分及厚度控制更加精确。
另外，除MOCVD以外的若干种不同的生长方法也可用于本发明。例如，所述生长方法也可为分子束外延(MBE)、液相外延(LPE)、氢化物气相外延(HVPE)、升华或等离子体增强化学气相沉积(PECVD)。
最后，可采用除蓝宝石以外的其他衬底。这些衬底包括碳化硅、氮化镓、硅、氧化锌、氮化硼、铝酸锂、铌酸锂、锗、氮化铝及镓酸锂。
为便于例示及说明起见，上文已提供了对本发明一个或多个实施例的说明。其并非旨在作为穷尽性说明或将本发明限定于所公开的确切形式。根据上述教示可作出诸多种修改及变动。本发明的范围并不打算由本详细说明加以限定，而时由随附权利要求书加以限定。

Claims (12)

1.一种用于形成一氮化物半导体装置的方法，其包括：
(a)在一衬底上生长一个或多个非极性氮化镓(GaN)层，使得所述非极性GaN层的生长表面是一个非极性平面；及
(b)在所述非极性GaN层的所述生长表面上生长一个或多个非极性a-平面(Al，B，In，Ga)N层，以形成至少一个非极性a-平面量子阱，其中所述非极性a-平面量子阱的最佳发射所需的量子阱宽度比一极性c-平面量子阱的最佳发射所需的量子阱宽度更大。
2.如权利要求1所述的方法，其中为了优化自所述非极性a-平面量子阱的发射强度，所述非极性a-平面量子阱的宽度范围从大于
Figure FSB00000745716900011
到
Figure FSB00000745716900012
3.如权利要求2所述的方法，其中自非极性a-平面量子阱的最大发射强度与约的非极性a-平面量子阱宽度相关联。
4.如权利要求3所述的方法，其中所述非极性a-平面量子阱具有
Figure FSB00000745716900014
的最佳量子阱宽度。
5.如权利要求1所述的方法，其中所述衬底为一r-平面蓝宝石衬底。
6.如权利要求1所述的方法，其中所述生长步骤(a)包括：
(1)对所述衬底进行退火；
(2)在所述衬底上沉积一基于氮化物的成核层；
(3)在所述成核层上生长所述GaN层；及
(4)在氮气过压下对所述GaN进行冷却。
7.如权利要求1所述的方法，其中所述非极性a-平面量子阱具有一掺杂势垒，其中所述掺杂势垒使用具有2×1018cm-3掺杂浓度的硅进行掺杂。
8.如权利要求1所述的方法，其中所述非极性a-平面量子阱是一GaN/AlGaN量子阱。
9.如权利要求1所述的方法，其中相较于一极性c-平面量子阱所需的量子阱宽度，最大发射强度与所述非极性a-平面量子阱的一较厚的量子阱宽度相关联。
10.如权利要求1所述的方法，其中所述非极性a-平面量子阱的最佳量子阱宽度主要取决于材料质量、界面粗糙度和激子的玻尔半径。
11.如权利要求1所述的方法，其中所述非极性a-平面量子阱的宽度范围从到
Figure FSB00000745716900022
12.一种氮化物半导体装置，其包括：
(a)在一衬底上生长的一个或多个非极性氮化镓(GaN)层，使得所述非极性GaN层的生长表面是一个非极性平面；及
(b)在所述非极性(GaN)层的所述生长表面上生长的一个或多个非极性a-平面(Al，B，In，Ga)N层所形成的一个或多个非极性a-平面量子阱，其中对于所述非极性a-平面量子阱的最佳发射所需的量子阱宽度比一极性c-平面量子阱的最佳发射所需的量子阱宽度更大。
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Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7208393B2 (en) 2002-04-15 2007-04-24 The Regents Of The University Of California Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
JP5046475B2 (ja) 2002-04-15 2012-10-10 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 金属・有機化学気相成長によって成長した非極性ａ平面窒化ガリウム薄膜
US8809867B2 (en) 2002-04-15 2014-08-19 The Regents Of The University Of California Dislocation reduction in non-polar III-nitride thin films
US7427555B2 (en) 2002-12-16 2008-09-23 The Regents Of The University Of California Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
JP4486506B2 (ja) 2002-12-16 2010-06-23 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア ハイドライド気相成長方法による転位密度の低い無極性窒化ガリウムの成長
US7186302B2 (en) 2002-12-16 2007-03-06 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US7504274B2 (en) 2004-05-10 2009-03-17 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US7956360B2 (en) 2004-06-03 2011-06-07 The Regents Of The University Of California Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy
US8193020B2 (en) 2006-11-15 2012-06-05 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition
CA2669228C (en) 2006-11-15 2014-12-16 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition
WO2008073385A1 (en) * 2006-12-11 2008-06-19 The Regents Of The University Of California Metalorganic chemical vapor deposition (mocvd) growth of high performance non-polar iii-nitride optical devices
JP2010512660A (ja) * 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 無極性および半極性の発光デバイス
WO2009039408A1 (en) * 2007-09-19 2009-03-26 The Regents Of The University Of California Method for increasing the area of non-polar and semi-polar nitride substrates
TWI380368B (en) * 2009-02-04 2012-12-21 Univ Nat Chiao Tung Manufacture method of a multilayer structure having non-polar a-plane {11-20} iii-nitride layer
CN102146585A (zh) * 2011-01-04 2011-08-10 武汉华炬光电有限公司 非极性面GaN外延片及其制备方法
CN102931315A (zh) * 2011-08-09 2013-02-13 叶哲良 半导体结构与制作方法
CN106299041A (zh) * 2016-08-29 2017-01-04 华南理工大学 生长在r面蓝宝石衬底上的非极性LED外延片的制备方法及应用
JP2019012826A (ja) * 2017-06-30 2019-01-24 国立研究開発法人物質・材料研究機構 ガリウム窒化物半導体基板、ガリウム窒化物半導体装置、撮像素子およびそれらの製造方法
CN109802020B (zh) * 2018-12-26 2020-05-19 华灿光电（浙江）有限公司 一种GaN基发光二极管外延片及其制备方法
CN110571311B (zh) * 2019-07-30 2021-12-14 中国科学技术大学 一种多量子阱结构、光电器件外延片及光电器件
CN116581217B (zh) * 2023-07-13 2023-09-12 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6440823B1 (en) * 1994-01-27 2002-08-27 Advanced Technology Materials, Inc. Low defect density (Ga, Al, In)N and HVPE process for making same
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US5974069A (en) * 1994-09-16 1999-10-26 Rohm Co., Ltd Semiconductor laser and manufacturing method thereof
US6072197A (en) * 1996-02-23 2000-06-06 Fujitsu Limited Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy
US6677619B1 (en) * 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US5926726A (en) * 1997-09-12 1999-07-20 Sdl, Inc. In-situ acceptor activation in group III-v nitride compound semiconductors
US6849472B2 (en) * 1997-09-30 2005-02-01 Lumileds Lighting U.S., Llc Nitride semiconductor device with reduced polarization fields
JP3955367B2 (ja) * 1997-09-30 2007-08-08 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 光半導体素子およびその製造方法
US6294440B1 (en) * 1998-04-10 2001-09-25 Sharp Kabushiki Kaisha Semiconductor substrate, light-emitting device, and method for producing the same
US6177057B1 (en) * 1999-02-09 2001-01-23 The United States Of America As Represented By The Secretary Of The Navy Process for preparing bulk cubic gallium nitride
US6590336B1 (en) * 1999-08-31 2003-07-08 Murata Manufacturing Co., Ltd. Light emitting device having a polar plane piezoelectric film and manufacture thereof
US6566231B2 (en) * 2000-02-24 2003-05-20 Matsushita Electric Industrial Co., Ltd. Method of manufacturing high performance semiconductor device with reduced lattice defects in the active region
KR100362060B1 (ko) * 2000-03-23 2002-11-22 삼성전자 주식회사 전계 흡수형 광변조기
JP3946427B2 (ja) 2000-03-29 2007-07-18 株式会社東芝 エピタキシャル成長用基板の製造方法及びこのエピタキシャル成長用基板を用いた半導体装置の製造方法
JP3968968B2 (ja) * 2000-07-10 2007-08-29 住友電気工業株式会社 単結晶ＧａＮ基板の製造方法
US6576932B2 (en) * 2001-03-01 2003-06-10 Lumileds Lighting, U.S., Llc Increasing the brightness of III-nitride light emitting devices
US6996147B2 (en) * 2001-03-30 2006-02-07 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
US6977953B2 (en) * 2001-07-27 2005-12-20 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device and method of fabricating the same
DE60234856D1 (de) * 2001-10-26 2010-02-04 Ammono Sp Zoo Substrat für epitaxie
KR100679377B1 (ko) * 2001-10-26 2007-02-05 암모노 에스피. 제트오. 오. 질화물 벌크 단결정층을 사용한 발광 디바이스 구조
JP5046475B2 (ja) * 2002-04-15 2012-10-10 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 金属・有機化学気相成長によって成長した非極性ａ平面窒化ガリウム薄膜
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
PL225427B1 (pl) * 2002-05-17 2017-04-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Struktura urządzenia emitującego światło, zwłaszcza do półprzewodnikowego urządzenia laserowego
SG130935A1 (en) * 2002-06-26 2007-04-26 Agency Science Tech & Res Method of cleaving gan/sapphire for forming laser mirror facets
JP4201541B2 (ja) 2002-07-19 2008-12-24 豊田合成株式会社 半導体結晶の製造方法及びｉｉｉ族窒化物系化合物半導体発光素子の製造方法
US7119359B2 (en) * 2002-12-05 2006-10-10 Research Foundation Of The City University Of New York Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures
US6876009B2 (en) * 2002-12-09 2005-04-05 Nichia Corporation Nitride semiconductor device and a process of manufacturing the same
US7808011B2 (en) * 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
Craven et. al..Structural charaterization of nonpolar a-plane GaN thinfilms grown on r-plane sapphire.Applied Physics Letters81 3.2002,81(3),469-471.
Craven et. al..Structural charaterization of nonpolar a-plane GaN thinfilms grown on r-plane sapphire.Applied Physics Letters81 3.2002,81(3),469-471. *
H.M.Ng.Molecular beam epitaxy of GaN/AlGaN multiple quantumwells on R-plane sapphire substrates.Applied Physics Letters80 23.2002,80(23),4369-4371.
H.M.Ng.Molecular beam epitaxy of GaN/AlGaN multiple quantumwells on R-plane sapphire substrates.Applied Physics Letters80 23.2002,80(23),4369-4371. *
R. Langer.Giant electric fields in unstrained GaN single quantum wells.Applied Physics Letters74 25.1999,74(25),3827-3829.
R. Langer.Giant electric fields in unstrained GaN single quantum wells.Applied Physics Letters74 25.1999,74(25),3827-3829. *

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