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TWI369784B - - Google Patents

Info

Publication number
TWI369784B
TWI369784B TW092135556A TW92135556A TWI369784B TW I369784 B TWI369784 B TW I369784B TW 092135556 A TW092135556 A TW 092135556A TW 92135556 A TW92135556 A TW 92135556A TW I369784 B TWI369784 B TW I369784B
Authority
TW
Taiwan
Application number
TW092135556A
Other versions
TW200423397A (en
Inventor
Benjamin A Haskell
Paul T Fini
Shigemasa Matsuda
Michael D Craven
Steven P Denbaars
James S Speck
Shuji Nakamura
Original Assignee
Univ California
Japan Science & Tech Agency
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California, Japan Science & Tech Agency filed Critical Univ California
Publication of TW200423397A publication Critical patent/TW200423397A/zh
Application granted granted Critical
Publication of TWI369784B publication Critical patent/TWI369784B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H10P14/24—
    • H10P14/271—
    • H10P14/276—
    • H10P14/2921—
    • H10P14/2926—
    • H10P14/3216—
    • H10P14/3416—
    • H10P14/3466—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
TW092135556A 2002-12-16 2003-12-16 Growth of planar, non-polar A-plane gallium nitride by hydride vapor phase epitaxy TW200423397A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43384302P 2002-12-16 2002-12-16
US43384402P 2002-12-16 2002-12-16

Publications (2)

Publication Number Publication Date
TW200423397A TW200423397A (en) 2004-11-01
TWI369784B true TWI369784B (zh) 2012-08-01

Family

ID=32717761

Family Applications (4)

Application Number Title Priority Date Filing Date
TW099131877A TWI445054B (zh) 2002-12-16 2003-12-16 藉由氫化物汽相磊晶術生長減少差排密度之非極性氮化鎵
TW099131879A TWI433313B (zh) 2002-12-16 2003-12-16 藉氫化物汽相磊晶術生長平面、非極性ａ－平面氮化鎵
TW092135555A TWI366865B (en) 2002-12-16 2003-12-16 Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
TW092135556A TW200423397A (en) 2002-12-16 2003-12-16 Growth of planar, non-polar A-plane gallium nitride by hydride vapor phase epitaxy

Family Applications Before (3)

Application Number Title Priority Date Filing Date
TW099131877A TWI445054B (zh) 2002-12-16 2003-12-16 藉由氫化物汽相磊晶術生長減少差排密度之非極性氮化鎵
TW099131879A TWI433313B (zh) 2002-12-16 2003-12-16 藉氫化物汽相磊晶術生長平面、非極性ａ－平面氮化鎵
TW092135555A TWI366865B (en) 2002-12-16 2003-12-16 Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy

Country Status (7)

Country Link
US (4) US7220658B2 (zh)
EP (1) EP1576671A4 (zh)
JP (3) JP4486506B2 (zh)
KR (2) KR101372698B1 (zh)
AU (2) AU2003259125A1 (zh)
TW (4) TWI445054B (zh)
WO (2) WO2004061969A1 (zh)

Families Citing this family (146)

* Cited by examiner, † Cited by third party
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US7427555B2 (en) 2002-12-16 2008-09-23 The Regents Of The University Of California Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
US7186302B2 (en) 2002-12-16 2007-03-06 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
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US7956360B2 (en) 2004-06-03 2011-06-07 The Regents Of The University Of California Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy
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