TWI264772B - Manufacturing method of semiconductor wafer and wafer - Google Patents
Manufacturing method of semiconductor wafer and waferInfo
- Publication number
- TWI264772B TWI264772B TW092110046A TW92110046A TWI264772B TW I264772 B TWI264772 B TW I264772B TW 092110046 A TW092110046 A TW 092110046A TW 92110046 A TW92110046 A TW 92110046A TW I264772 B TWI264772 B TW I264772B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- polishing
- backside
- chamfering
- mirror
- Prior art date
Links
Classifications
-
- H10P52/00—
-
- H10P90/12—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H10P50/642—
-
- H10P70/15—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/928—Front and rear surface processing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002128550A JP4093793B2 (ja) | 2002-04-30 | 2002-04-30 | 半導体ウエーハの製造方法及びウエーハ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200403738A TW200403738A (en) | 2004-03-01 |
| TWI264772B true TWI264772B (en) | 2006-10-21 |
Family
ID=29397270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092110046A TWI264772B (en) | 2002-04-30 | 2003-04-29 | Manufacturing method of semiconductor wafer and wafer |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7250368B2 (zh) |
| EP (1) | EP1501119B1 (zh) |
| JP (1) | JP4093793B2 (zh) |
| KR (1) | KR100909140B1 (zh) |
| CN (1) | CN100365774C (zh) |
| DE (1) | DE60325039D1 (zh) |
| TW (1) | TWI264772B (zh) |
| WO (1) | WO2003094215A1 (zh) |
Families Citing this family (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4273943B2 (ja) * | 2003-12-01 | 2009-06-03 | 株式会社Sumco | シリコンウェーハの製造方法 |
| JP4856861B2 (ja) * | 2004-07-20 | 2012-01-18 | シャープ株式会社 | 半導体装置の製造方法 |
| DE102006020823B4 (de) * | 2006-05-04 | 2008-04-03 | Siltronic Ag | Verfahren zur Herstellung einer polierten Halbleiterscheibe |
| JP2008166805A (ja) * | 2006-12-29 | 2008-07-17 | Siltron Inc | 高平坦度シリコンウェハーの製造方法 |
| US8454852B2 (en) * | 2007-01-31 | 2013-06-04 | Shin-Etsu Handotai Co., Ltd. | Chamfering apparatus for silicon wafer, method for producing silicon wafer, and etched silicon wafer |
| US20100075442A1 (en) * | 2007-04-27 | 2010-03-25 | Yoshinori Hayashi | Semiconductor wafer processing apparatus, reference angular position detection method, and semiconductor wafer |
| JP2009302338A (ja) * | 2008-06-13 | 2009-12-24 | Sumco Corp | ウェーハの研磨方法および該方法により製造されるウェーハ |
| JP2009302410A (ja) * | 2008-06-16 | 2009-12-24 | Sumco Corp | 半導体ウェーハの製造方法 |
| JP2009302409A (ja) * | 2008-06-16 | 2009-12-24 | Sumco Corp | 半導体ウェーハの製造方法 |
| JP5600867B2 (ja) * | 2008-06-16 | 2014-10-08 | 株式会社Sumco | 半導体ウェーハの製造方法 |
| JP2009302478A (ja) * | 2008-06-17 | 2009-12-24 | Sumco Techxiv株式会社 | 半導体ウェーハの製造方法 |
| FR2935536B1 (fr) * | 2008-09-02 | 2010-09-24 | Soitec Silicon On Insulator | Procede de detourage progressif |
| EP2200077B1 (en) * | 2008-12-22 | 2012-12-05 | Soitec | Method for bonding two substrates |
| DE102009030295B4 (de) * | 2009-06-24 | 2014-05-08 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
| JP5423384B2 (ja) * | 2009-12-24 | 2014-02-19 | 株式会社Sumco | 半導体ウェーハおよびその製造方法 |
| US8952496B2 (en) * | 2009-12-24 | 2015-02-10 | Sumco Corporation | Semiconductor wafer and method of producing same |
| WO2011083667A1 (ja) * | 2010-01-05 | 2011-07-14 | 住友電気工業株式会社 | 化合物半導体ウェハの加工方法及び加工装置 |
| DE102010005904B4 (de) * | 2010-01-27 | 2012-11-22 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
| US8758088B2 (en) | 2011-10-06 | 2014-06-24 | Wayne O. Duescher | Floating abrading platen configuration |
| US8696405B2 (en) | 2010-03-12 | 2014-04-15 | Wayne O. Duescher | Pivot-balanced floating platen lapping machine |
| US8647171B2 (en) * | 2010-03-12 | 2014-02-11 | Wayne O. Duescher | Fixed-spindle floating-platen workpiece loader apparatus |
| US8641476B2 (en) | 2011-10-06 | 2014-02-04 | Wayne O. Duescher | Coplanar alignment apparatus for rotary spindles |
| US8647170B2 (en) | 2011-10-06 | 2014-02-11 | Wayne O. Duescher | Laser alignment apparatus for rotary spindles |
| US8647172B2 (en) | 2010-03-12 | 2014-02-11 | Wayne O. Duescher | Wafer pads for fixed-spindle floating-platen lapping |
| US8602842B2 (en) * | 2010-03-12 | 2013-12-10 | Wayne O. Duescher | Three-point fixed-spindle floating-platen abrasive system |
| US8740668B2 (en) * | 2010-03-12 | 2014-06-03 | Wayne O. Duescher | Three-point spindle-supported floating abrasive platen |
| US8500515B2 (en) | 2010-03-12 | 2013-08-06 | Wayne O. Duescher | Fixed-spindle and floating-platen abrasive system using spherical mounts |
| FR2961630B1 (fr) | 2010-06-22 | 2013-03-29 | Soitec Silicon On Insulator Technologies | Appareil de fabrication de dispositifs semi-conducteurs |
| US8338266B2 (en) | 2010-08-11 | 2012-12-25 | Soitec | Method for molecular adhesion bonding at low pressure |
| FR2964193A1 (fr) | 2010-08-24 | 2012-03-02 | Soitec Silicon On Insulator | Procede de mesure d'une energie d'adhesion, et substrats associes |
| US8337280B2 (en) | 2010-09-14 | 2012-12-25 | Duescher Wayne O | High speed platen abrading wire-driven rotary workholder |
| US8430717B2 (en) | 2010-10-12 | 2013-04-30 | Wayne O. Duescher | Dynamic action abrasive lapping workholder |
| JP2012178458A (ja) * | 2011-02-25 | 2012-09-13 | Fujitsu Ltd | 半導体装置の製造方法及び半導体基板の洗浄方法 |
| JP6027346B2 (ja) * | 2012-06-12 | 2016-11-16 | Sumco Techxiv株式会社 | 半導体ウェーハの製造方法 |
| US9011207B2 (en) | 2012-10-29 | 2015-04-21 | Wayne O. Duescher | Flexible diaphragm combination floating and rigid abrading workholder |
| US9199354B2 (en) | 2012-10-29 | 2015-12-01 | Wayne O. Duescher | Flexible diaphragm post-type floating and rigid abrading workholder |
| US9604339B2 (en) | 2012-10-29 | 2017-03-28 | Wayne O. Duescher | Vacuum-grooved membrane wafer polishing workholder |
| US8998677B2 (en) | 2012-10-29 | 2015-04-07 | Wayne O. Duescher | Bellows driven floatation-type abrading workholder |
| US9039488B2 (en) | 2012-10-29 | 2015-05-26 | Wayne O. Duescher | Pin driven flexible chamber abrading workholder |
| US8845394B2 (en) | 2012-10-29 | 2014-09-30 | Wayne O. Duescher | Bellows driven air floatation abrading workholder |
| US8998678B2 (en) | 2012-10-29 | 2015-04-07 | Wayne O. Duescher | Spider arm driven flexible chamber abrading workholder |
| US9233452B2 (en) | 2012-10-29 | 2016-01-12 | Wayne O. Duescher | Vacuum-grooved membrane abrasive polishing wafer workholder |
| TWI599446B (zh) * | 2013-03-25 | 2017-09-21 | Sapphire polishing pad dresser production methods | |
| CN104142259A (zh) * | 2013-05-10 | 2014-11-12 | 河南协鑫光伏科技有限公司 | 一种太阳能单晶硅测试样片的制作方法 |
| JP2015038919A (ja) * | 2013-08-19 | 2015-02-26 | 株式会社ディスコ | ウェーハの製造方法 |
| JP6244962B2 (ja) * | 2014-02-17 | 2017-12-13 | 株式会社Sumco | 半導体ウェーハの製造方法 |
| JP6040947B2 (ja) * | 2014-02-20 | 2016-12-07 | 信越半導体株式会社 | ワークの両頭研削方法 |
| CN103847032B (zh) * | 2014-03-20 | 2016-01-06 | 德清晶辉光电科技有限公司 | 一种大直径超薄石英晶片的生产工艺 |
| CN103921205B (zh) * | 2014-04-04 | 2016-08-24 | 德清晶辉光电科技有限公司 | 一种6英寸铌酸锂晶片或钽酸锂晶片的生产工艺 |
| JP6045542B2 (ja) * | 2014-09-11 | 2016-12-14 | 信越半導体株式会社 | 半導体ウェーハの加工方法、貼り合わせウェーハの製造方法、及びエピタキシャルウェーハの製造方法 |
| DE102015220924B4 (de) * | 2015-10-27 | 2018-09-27 | Siltronic Ag | Suszeptor zum Halten einer Halbleiterscheibe mit Orientierungskerbe, Verfahren zum Abscheiden einer Schicht auf einer Halbleiterscheibe und Halbleiterscheibe |
| US10926378B2 (en) | 2017-07-08 | 2021-02-23 | Wayne O. Duescher | Abrasive coated disk islands using magnetic font sheet |
| EP3567139B1 (en) | 2018-05-11 | 2021-04-07 | SiCrystal GmbH | Chamfered silicon carbide substrate and method of chamfering |
| EP3567138B1 (en) * | 2018-05-11 | 2020-03-25 | SiCrystal GmbH | Chamfered silicon carbide substrate and method of chamfering |
| US11691241B1 (en) * | 2019-08-05 | 2023-07-04 | Keltech Engineering, Inc. | Abrasive lapping head with floating and rigid workpiece carrier |
| JP7562994B2 (ja) * | 2020-06-08 | 2024-10-08 | 株式会社Sumco | ウェーハ外周部の研磨装置 |
| TWI802406B (zh) * | 2021-07-29 | 2023-05-11 | 環球晶圓股份有限公司 | 碳化矽晶圓的加工方法 |
| CN115091638A (zh) * | 2022-06-30 | 2022-09-23 | 广东先导微电子科技有限公司 | 一种碲锌镉晶片加工方法 |
| CN115781459B (zh) * | 2022-12-16 | 2025-07-15 | 万华化学集团电子材料有限公司 | 晶棒滚圆开槽方法及晶棒滚圆开槽装置 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3430499B2 (ja) * | 1996-08-09 | 2003-07-28 | 三菱住友シリコン株式会社 | 半導体ウェ−ハおよびその製造方法 |
| US5821166A (en) * | 1996-12-12 | 1998-10-13 | Komatsu Electronic Metals Co., Ltd. | Method of manufacturing semiconductor wafers |
| JPH11188590A (ja) | 1997-12-22 | 1999-07-13 | Speedfam Co Ltd | エッジポリッシング装置 |
| JP3964029B2 (ja) | 1998-01-20 | 2007-08-22 | 沖電気工業株式会社 | 半導体基板の製造方法 |
| JP3664593B2 (ja) * | 1998-11-06 | 2005-06-29 | 信越半導体株式会社 | 半導体ウエーハおよびその製造方法 |
| JP3329288B2 (ja) * | 1998-11-26 | 2002-09-30 | 信越半導体株式会社 | 半導体ウエーハおよびその製造方法 |
| JP3551300B2 (ja) * | 1999-02-18 | 2004-08-04 | 三菱住友シリコン株式会社 | 高平坦度ウェーハの製造方法 |
| JP4154683B2 (ja) * | 1999-09-30 | 2008-09-24 | 株式会社Sumco | 高平坦度裏面梨地ウェーハの製造方法および該製造方法に用いられる表面研削裏面ラップ装置 |
| US6376378B1 (en) * | 1999-10-08 | 2002-04-23 | Chartered Semiconductor Manufacturing, Ltd. | Polishing apparatus and method for forming an integrated circuit |
| DE19956250C1 (de) * | 1999-11-23 | 2001-05-17 | Wacker Siltronic Halbleitermat | Kostengünstiges Verfahren zur Herstellung einer Vielzahl von Halbleiterscheiben |
| DE10004578C1 (de) * | 2000-02-03 | 2001-07-26 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Halbleiterscheibe mit polierter Kante |
| EP1188516A4 (en) * | 2000-02-23 | 2004-12-08 | Shinetsu Handotai Kk | METHOD AND DEVICE FOR POLISHING THE OUTSIDE EDGE OF A BEVELED PART OF A SEMICONDUCTOR LOOP |
| JP4846915B2 (ja) * | 2000-03-29 | 2011-12-28 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
| WO2001073831A1 (fr) * | 2000-03-29 | 2001-10-04 | Shin-Etsu Handotai Co., Ltd. | Procede d'obtention de tranches de silicium ou de soi et tranches ainsi obtenues |
| US7332437B2 (en) * | 2000-06-29 | 2008-02-19 | Shin-Etsu Handotai Co., Ltd. | Method for processing semiconductor wafer and semiconductor wafer |
| DE10058305A1 (de) * | 2000-11-24 | 2002-06-06 | Wacker Siltronic Halbleitermat | Verfahren zur Oberflächenpolitur von Siliciumscheiben |
| DE10142400B4 (de) * | 2001-08-30 | 2009-09-03 | Siltronic Ag | Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung |
| KR100420205B1 (ko) * | 2001-09-10 | 2004-03-04 | 주식회사 하이닉스반도체 | 웨이퍼 제조 방법 |
| DE10159833C1 (de) * | 2001-12-06 | 2003-06-18 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Vielzahl von Halbleiterscheiben |
| JP2004022677A (ja) * | 2002-06-13 | 2004-01-22 | Shin Etsu Handotai Co Ltd | 半導体ウエーハ |
| JP4464033B2 (ja) * | 2002-06-13 | 2010-05-19 | 信越半導体株式会社 | 半導体ウエーハの形状評価方法及び形状評価装置 |
| US7416962B2 (en) * | 2002-08-30 | 2008-08-26 | Siltronic Corporation | Method for processing a semiconductor wafer including back side grinding |
| WO2004027840A2 (en) * | 2002-09-18 | 2004-04-01 | Memc Electronic Materials, Inc. | Process for etching silicon wafers |
-
2002
- 2002-04-30 JP JP2002128550A patent/JP4093793B2/ja not_active Expired - Fee Related
-
2003
- 2003-04-24 DE DE60325039T patent/DE60325039D1/de not_active Expired - Lifetime
- 2003-04-24 US US10/512,637 patent/US7250368B2/en not_active Expired - Lifetime
- 2003-04-24 CN CNB03809715XA patent/CN100365774C/zh not_active Expired - Lifetime
- 2003-04-24 KR KR1020047015613A patent/KR100909140B1/ko not_active Expired - Fee Related
- 2003-04-24 WO PCT/JP2003/005259 patent/WO2003094215A1/ja not_active Ceased
- 2003-04-24 EP EP03719197A patent/EP1501119B1/en not_active Expired - Lifetime
- 2003-04-29 TW TW092110046A patent/TWI264772B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP4093793B2 (ja) | 2008-06-04 |
| JP2003324081A (ja) | 2003-11-14 |
| DE60325039D1 (de) | 2009-01-15 |
| US20050142882A1 (en) | 2005-06-30 |
| US7250368B2 (en) | 2007-07-31 |
| EP1501119B1 (en) | 2008-12-03 |
| KR100909140B1 (ko) | 2009-07-23 |
| CN100365774C (zh) | 2008-01-30 |
| TW200403738A (en) | 2004-03-01 |
| EP1501119A1 (en) | 2005-01-26 |
| EP1501119A4 (en) | 2007-01-17 |
| KR20040111463A (ko) | 2004-12-31 |
| WO2003094215A1 (en) | 2003-11-13 |
| CN1650404A (zh) | 2005-08-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |