201201918 六、發明說明： 【發明所屬之技術領域】 本發明關於一種製程反應系統，尤指一種利用喷氣裝置喷吹出與 基板之間具有介於15度至25度内之夾角之清潔氣流以去除微粒的 製程反應系統。 【先前技術】 一般而言’在半導體的各項相關製程中，基板上的微粒是主要的 /亏染源之一’其多寡程度通常會對製程品質的好壞產生極大的影 妻。舉例來說’在基板上進行光阻層的曝光製程中，若有過多的微 粒附著於基板上或是進入曝光機内，則經曝光後所產生的光阻圖案 就會因此產生缺陷及錯誤，從而導致不良的曝光品質。 於先則技術巾，常見絲去除微粒的方式係離子氣流吹出裝 置以將基板表面的微粒吹離，以避倾_著於絲上；上述方式 之相關配置’舉例來說，其係可如第丨圖以及第2圖所示，第！圖 為先前技術-製程反應系統10之立體示意圖，第2圖為第1圖所示 之製程反應祕10之側視圖，製程反齡統ω侧來於—基板η 场行反應製程（如侧、曝料），製程反應祕⑴包含有一製 矛王反應至14以及一離子氣流吹出梦罟1 ^ .备丨 t ^ 人出眾置16,製程反應室14具有一閘 門18 ’意即基板12係經由閘門18以鱼 吹屮_ Hμ, 製程反齡14 ;離子氣流 人出裝置16係έ又置於基板12之正上 上方離子氣流吹出裝置16用來 3 201201918 吹出離子乱流至基板12之表面上，如此即可巾和在基板12之表面 上所累積的靜電荷並同時將微粒吹離。 然而，如第2圖所示，此種方式需要將離子氣流吹出裝置16以 相當近的距_直設置於基板12之正上方，如此才能使離子氣流吹 出裝置16有效地吹起微粒，因此，若是基板12在傳送過程中產生 振動，例如在使用機械手臂傳送時所造成的振動，持續振動中的基 板12就會容易與以近距離設置的離子氣流吹出裝置16發生碰撞， 從而造成基板I2的損壞’而垂直喷吹至基板U上雜子氣流也會 容易產生不必要的擾流現象，除此之外，藉由離子氣流之垂直喷二 而揚起的微粒（如第2圖所示）亦容易因此經由_18而進入製程 反應至14進而對製程反應冑14内所進行的反應製程造成不良 的影響。 【發明内容】 因此，本發明係提供__翻时氣裝置喷吹出與基板之間具有介 於15度至25度内之失角之清潔氣流以去除微粒的製程反應系統， 以解決上述之問題。 本發明提供-種製程反應系統，其係用來於一基板上進行一反應 製程，該製程反應系統包含有—製程反應室，其具有—閘口 ；⑽ 一噴氣裝置’其係設置於對應該閘口之位置上且位於該基板之上 方，該喷氣裝置用於產生—清潔氣流，該清潔氣流具有—流動路徑， 201201918 且該流動路徑與該基板間具有一夾角，該夾角係實質上介於15度至 25度。 【實施方式】 請參閱第3圖’其為根據本發明一較佳實施例所提出之一製程反 應系統100之側視圖，製程反應系統1〇〇係用來於一基板1〇2上進 行一反應製程，其中基板102係為一般常見應用於半導體製程中的 ^板件，例如是印刷基板(硬式基板）、玻璃基板或可撓基板(軟性基板) 等，由第3圖可知，製程反應系統1〇〇包含有一製程反應室1〇4、 一喷氣裝置106、一離子產生裝置108，以及一微粒清潔設備n〇 ; 在此實施例中，製程反應室104係較佳地為一曝光機，也就是說， 本發明所提出之製程反應系統100係較佳地應用於基板丨〇2的曝光 反應製程上，但不受此限，製程反應系統100亦可應用於其他需要 對基板進行微粒清潔步驟的反應製程上，如I虫刻製程等；此外，製 程反應室104具有一閘口 112，基板1〇2係可經由閘口 112以進入 # 製程反應室1〇4内。 接著，請同時參閱第3圖以及第4圖，第4圖為第3圖所示之喷 氣裝置106設置於對應閘口 112之位置上且位於基板1〇2之上方的 立體示思圖；噴氣裝置106用於產生一清潔氣流114，其係由常見 的’月 '冰軋體所組成，如氮氣、乾燥空氣（Clean Dry Air，CDA )等； 至於喷氣裝置106與基板102之間的配置關係，其係可如第4圖所 示；由第4圖可知，喷氣裝置106係設置於閘口 112前，藉以使基 201201918 板102在經由閘口 112進入製程反應室1〇4之前會先經過喷氣裝置 106所產生之清潔氣流114的喷吹，其中，如第3圖所示，清潔氣 流114具有一動路徑116，且流動路徑116與基板1〇2間具有一 夹角(9 ’值付注意的是，夾角0若過大會容易導致擾流的產生以及 減弱將微粒往遠離製程反應室1〇4之方向吹離的效果，反之，若夾 角0太小’則無法有效地將微粒自基板1〇2上移除，在此實施例中， 夾角Θ係較佳地介於15度至25度之範圍内，其中經實際測試，當 夹角0等於20度時，噴氣裝置106係具有較佳的微粒清潔效能；此 外，喷氣裝置106係與基板1〇2相距一特定高度D，藉以避免與基 板102發生碰撞，在此實施例中，特定高度D係較佳地等於1〇〇mm。 在離子產生裝置108方面，其係設置於清潔氣流114之流動路徑 116的範圍内，藉以讓離子產生裝置所產生之離子可順利地進 入清潔氣流114内，進而使清潔氣流114產生離子化現象，由第3 圖以及第4圖可知，在此實施例中，離子產生裝置係與喷氣裝 置106貫質上位於同一垂直面上且較佳地位於喷氣裝置丨〇6之下 方，但不受此限’其亦可改設置於喷氣裝置1〇6之上方或是製程反 應系統100内其他可使離子產生裝置1〇8所產生之離子順利地進入 清潔氣流114内的位置上。 此外’在微粒清潔設備110方面，微粒清潔設備11〇係用來帶離 被清潔氣流114從基板102上所吹起之微粒，並且係設置於對應基 板102之位置上，舉例來說，假設微粒清潔設備no係為一垂直層 201201918 流式（Downflow)清潔設備’則微粒清潔設備110係可提供—由上 往下的氣流，以引導被清潔氣流114所揚起之微粒的移動，藉以避 免微粒再次附著於基板102上的情況發生；值得注意的是，微粒、青 潔設備110之類型係可不限於上述之垂直層流式清潔設備，其亦可 採用其他常見的微粒清潔設備，如亂流式（c〇nventi〇nalflow：)或水 平層流式（Crossflow)清潔設備等’至於採用何種配置，端視製程 反應系統100之潔淨等級需求而定。201201918 VI. Description of the Invention: [Technical Field] The present invention relates to a process reaction system, and more particularly to a cleaning airflow having an angle between 15 degrees and 25 degrees with a substrate by a jet device to remove particles. Process response system. [Prior Art] Generally speaking, in the related processes of semiconductors, the particles on the substrate are one of the main/defective sources. The degree of the film generally has a great impact on the quality of the process. For example, in the exposure process of the photoresist layer on the substrate, if too many particles adhere to the substrate or enter the exposure machine, the photoresist pattern generated after the exposure may cause defects and errors, thereby Lead to poor exposure quality. In the first technical towel, the common method of removing particles by the wire is an ion gas flow blowing device to blow off the particles on the surface of the substrate to avoid tilting on the wire; the related configuration of the above method is, for example, the first In the map and the second picture, the first! The figure is a schematic view of the prior art-process reaction system 10, and FIG. 2 is a side view of the process reaction secret 10 shown in FIG. 1, the process of the reverse phase ω side comes from the substrate η field reaction process (eg, side, Exposure), process reaction secret (1) contains a spear king reaction to 14 and an ion gas stream blowing nightmare 1 ^. 丨t ^ person outstanding 16, process chamber 14 has a gate 18 'meaning that the substrate 12 is via The gate 18 is blown by the fish _ Hμ, and the process is reversed. The ion flow device 16 is placed on the upper side of the substrate 12 and the ion gas blowing device 16 is used for 3 201201918 to blow the ions to the surface of the substrate 12 . Thus, the towel and the static charge accumulated on the surface of the substrate 12 can be simultaneously blown away. However, as shown in FIG. 2, this method requires the ion gas flow blowing device 16 to be disposed directly above the substrate 12 at a relatively close distance so that the ion gas flow blowing device 16 can effectively blow up the particles. If the substrate 12 vibrates during the transfer process, for example, when the robot arm is used for transmission, the substrate 12 in the continuous vibration is likely to collide with the ion gas blowing device 16 disposed at a close distance, thereby causing damage to the substrate I2. 'When the jets are blown vertically onto the substrate U, it is easy to generate unnecessary spoiler. In addition, the particles raised by the vertical jet of the ion stream (as shown in Figure 2) are also It is therefore easy to enter the process reaction via _18 to 14 and thus adversely affect the reaction process carried out in the process reaction 胄14. SUMMARY OF THE INVENTION Accordingly, the present invention provides a process reaction system for removing a particulate clean air stream having a lost angle between 15 degrees and 25 degrees between a substrate and a substrate to solve the above problems. . The invention provides a process reaction system for performing a reaction process on a substrate, the process reaction system comprising a process chamber having a gate; (10) a jet device being disposed at a corresponding gate Positioned above and above the substrate, the jet device is used to generate a clean air stream having a flow path, 201201918 and having an angle between the flow path and the substrate, the angle being substantially 15 degrees To 25 degrees. [Embodiment] Please refer to FIG. 3, which is a side view of a process reaction system 100 according to a preferred embodiment of the present invention. The process reaction system 1 is used to perform a process on a substrate 1〇2. The reaction process, wherein the substrate 102 is a commonly used plate member in a semiconductor process, such as a printed substrate (hard substrate), a glass substrate, or a flexible substrate (soft substrate). As shown in FIG. 3, the process reaction system 1〇〇 includes a process chamber 1〇4, a jet device 106, an ion generating device 108, and a particulate cleaning device n〇; in this embodiment, the process chamber 104 is preferably an exposure machine. That is, the process reaction system 100 proposed by the present invention is preferably applied to the exposure reaction process of the substrate 丨〇2, but not limited thereto, the process reaction system 100 can also be applied to other processes requiring particle cleaning of the substrate. In the reaction process of the step, such as the I-cut process, etc.; in addition, the process reaction chamber 104 has a gate 112, and the substrate 1〇2 can pass through the gate 112 to enter the #process reaction chamber 1〇4. Next, please refer to FIG. 3 and FIG. 4 at the same time. FIG. 4 is a perspective view of the air jet device 106 shown in FIG. 3 disposed at the position corresponding to the gate 112 and above the substrate 1〇2; 106 is used to generate a clean gas stream 114, which is composed of a common 'month' ice-rolled body, such as nitrogen, dry air (CDA), etc.; as for the arrangement relationship between the jet device 106 and the substrate 102, The system can be as shown in FIG. 4; as can be seen from FIG. 4, the jet device 106 is disposed in front of the gate 112, so that the base 201201918 plate 102 passes through the jet device 106 before entering the process chamber 1〇4 via the gate 112. The resulting cleaning airflow 114 is blown, wherein, as shown in FIG. 3, the cleaning airflow 114 has a moving path 116, and the flow path 116 has an angle with the substrate 1〇2 (9' value is noted, If the angle 0 is too large, it will easily cause the generation of the turbulence and weaken the effect of blowing the particles away from the process chamber 1〇4. Conversely, if the angle 0 is too small, the particles cannot be effectively applied to the substrate 1〇2. Removed, in this embodiment, clip The corner Θ system is preferably in the range of 15 degrees to 25 degrees, wherein the actual test, when the angle 0 is equal to 20 degrees, the jet device 106 has better particle cleaning performance; in addition, the jet device 106 is coupled with The substrate 1 〇 2 is spaced apart from a specific height D to avoid collision with the substrate 102. In this embodiment, the specific height D is preferably equal to 1 〇〇 mm. In terms of the ion generating device 108, it is disposed in the cleaning airflow. In the range of the flow path 116 of 114, the ions generated by the ion generating device can smoothly enter the clean gas stream 114, thereby causing the clean gas stream 114 to be ionized. As shown in FIGS. 3 and 4, it is implemented here. In an example, the ion generating device is located on the same vertical plane as the jet device 106 and is preferably located below the jet device 6 but is not limited thereto. It may also be modified to be disposed in the jet device 1〇6. Above or other processes in the process reaction system 100, the ions generated by the ion generating device 1〇8 can smoothly enter the position in the clean gas stream 114. Further, in the particle cleaning device 110, the particle cleaning device 11〇 It is used to carry the particles blown from the substrate 102 by the cleaned airflow 114, and is disposed at the position of the corresponding substrate 102. For example, it is assumed that the particle cleaning device no is a vertical layer 201201918 (Downflow) The cleaning device 'the particulate cleaning device 110 can provide a flow from top to bottom to direct the movement of the particles lifted by the cleaning gas stream 114 to avoid reattachment of the particles to the substrate 102; it is worth noting that The type of the particulate and green cleaning device 110 may not be limited to the above vertical laminar flow cleaning device, and may also adopt other common particulate cleaning devices, such as turbulent flow (c〇nventi〇nalflow:) or horizontal laminar flow ( Crossflow) Cleaning equipment, etc. As for the configuration, it depends on the cleanliness requirements of the process reaction system 100.
於此針對製程反應系統100之微粒清潔流程進行詳細之描述，請 同時參閱第3圖以及第4圖；在此實施例中，製程反應系統1〇〇係 利用於半導體製程巾f見的運式（如以滾輪傳送或以機械手臂 傳送等），以將基板102經由閘口 112送入製程反應冑1〇4内，藉以 於基板102上開始進行相對應的反應製程；而在沿著如第4圖所示 之-Y軸方向以將基板1()2送入製程反應室⑴4之前，首先 粒清潔的步驟以確保製程品質，也就是說，在基板氣經由閘口⑴ ^製程反應室刚之前，設置於閘口 112上方的噴錄置顺就 二:Μ至基板1〇2上’此時’由上述可知，由於清 办耽^之流動路116係與基板1〇2之間具有夹角"其較佳 值約等於20度）’因此’當清潔氣流ιΐ4接觸到基板1 氣流叫不财公财向上提供—絲分狀加下壓基板 1 中卩，板1G2本身之振動，進崎低基板⑽在運送過程 ’、、件發生碰撞而損壞的機率，於此同時，清潔氣流m 可在+γ轴方向上提供—水平分量氣流至基板上，藉以產生 201201918 將原本附著於基板102之表面上之微粒往遠離製程反應室1〇4之方 向吹離的效果。 值得注意的是，由第3圖以及第4圖可知，由於離子產生裝置 108係設置於喷氣裝置106之下方，因此，離子產生裝置1〇8向外 放射的離子就會在喷氣裝置1〇6喷吹清潔氣流114至基板1〇2上的 過程中進入清潔氣流114内’以使清潔氣流114產生離子化的現象， 故在清潔氣流114將附著於基板1〇2的微粒吹離的同時，位於清潔 氣流114内的離子也會與基板102上的靜電荷相互中和，如此不僅 可除去微粒與基板102之間的靜電吸引力，進而使得微粒可更容易 地被清除，同時亦可避免在基板1()2上因靜電荷累積過多而產生靜 電放電（Electrostatic Discharge，ESD)的情況發生。 除了利用喷氣裝U06所產生之清潔氣流114以將微粒從基板 102上吹離以及中和基板1()2上的靜電荷之外，製程反應系統卿 可進-步地利用微粒清潔設備110以降低微粒再次附著於基板1〇2 上的機率並達到去除微粒的功效，也就是說，當附著於基板ι〇2上 的微粒被清潔氣流m吹離時，由第3圖可知，微粒清潔設備ιι〇 所提供之由上往下吹的氣流（如第3圖所示之箭頭方向）係可抑制 微粒再次_基板1〇2上的情況發生，也就是說，當微粒被清潔氣 流m吹離而在空+懸浮時，微粒就會被此一由上往下吹的氣流帶 動而往_z軸方向移動，直到順著氣流方向而從如第3圖所示之微粒 /月潔。又備110之夕孔層板118排出為止，如此即可達到去除微粒 201201918 的目的。 值得一提的是’上述離子產生裝置1〇8以及微粒清潔設備u〇 皆可為一可省略之元件’藉以簡化製程反應系統100之配置，換句 話說’製程反應系統100係可僅利用噴氣裝置1〇6來清除附著於基 板102上之微粒’至於採用何種配置，端視製程反應系統1〇〇之實 際製程需求而定。The particle cleaning process of the process reaction system 100 is described in detail herein. Please refer to FIG. 3 and FIG. 4 at the same time. In this embodiment, the process reaction system 1 is used in the semiconductor manufacturing process. (such as by roller transfer or robotic arm transfer, etc.), to send the substrate 102 into the process reaction 胄1〇4 via the gate 112, so that the corresponding reaction process starts on the substrate 102; The -Y-axis direction shown in the figure is before the substrate 1 () 2 is sent to the process chamber (1) 4, and the first step of grain cleaning is to ensure the process quality, that is, before the substrate gas passes through the gate (1) ^ process chamber, The recording position disposed above the gate 112 is two: Μ to the substrate 1〇2, 'this time' is known from the above, since the flow path 116 of the cleaning device has an angle with the substrate 1〇2" The preferred value is approximately equal to 20 degrees.] Therefore, when the cleaning airflow ι4 contacts the substrate 1, the airflow is supplied upwards. The wire is divided and the substrate 1 is pressed, and the vibration of the plate 1G2 itself is lowered. (10) During the transportation process, the parts touched At the same time, the cleaning airflow m can provide a horizontal component airflow to the substrate in the +γ-axis direction, thereby generating 201201918 to move the particles originally attached to the surface of the substrate 102 away from the process chamber 1〇4. The effect of blowing away. It should be noted that, as can be seen from FIG. 3 and FIG. 4, since the ion generating device 108 is disposed below the air jet device 106, ions radiated outward from the ion generating device 1〇8 are in the jet device 1〇6. When the cleaning airflow 114 is blown into the cleaning airflow 114 during the process of the cleaning of the airflow 114 to cause the cleaning airflow 114 to be ionized, the cleaning airflow 114 blows off the particles attached to the substrate 1〇2, The ions located in the clean gas stream 114 are also neutralized with the static charge on the substrate 102, thus not only removing the electrostatic attraction between the particles and the substrate 102, thereby allowing the particles to be more easily removed, while also avoiding Electrostatic discharge (ESD) occurs on the substrate 1 () 2 due to excessive accumulation of static charge. In addition to utilizing the clean gas stream 114 produced by the jet U06 to blow particles away from the substrate 102 and neutralize the static charge on the substrate 1 () 2, the process reaction system can further utilize the particle cleaning device 110 Reducing the probability of the particles reattaching to the substrate 1〇2 and achieving the effect of removing the particles, that is, when the particles attached to the substrate ι2 are blown away by the cleaning gas stream m, as shown in FIG. 3, the particle cleaning device The airflow blown from top to bottom provided by ιι〇 (as indicated by the arrow direction in Fig. 3) suppresses the occurrence of particles on the substrate 1〇2 again, that is, when the particles are blown away by the cleaning airflow m In the case of air + suspension, the particles are moved by the airflow from top to bottom and moved in the direction of the _z axis until the particles/months are as shown in Fig. 3 along the direction of the airflow. In addition, the 110-hole layer laminate 118 is discharged, so that the purpose of removing the particles 201201918 can be achieved. It is worth mentioning that 'the above-mentioned ion generating device 1〇8 and the particle cleaning device u can be an omitting element' to simplify the configuration of the process reaction system 100, in other words, the process reaction system 100 can only utilize the jet. The device 1〇6 is used to remove the particles attached to the substrate 102. As for the configuration, it depends on the actual process requirements of the process reaction system.
相較於先别技術以極近距離將離子氣流吹出裝置垂直設置於基 板之正上方以去除微粒，本發明係改將噴氣裝置設置於對應製程反 應至之閘口的位置上（如第3圖所示之位於基板搬右上方之位 置）’並且利时氣裝置噴吹出與基板間具有介於15度至25度内之 炎角之清餘流財除雜，如此—來，本發明所提供之製程反應 系、’充不僅可彻噴氣裝置與基板相距—特定高度之配置以及利用上 述清潔氣缺供垂直分魏流下壓絲財卩佩板之觸，從而降 低基板在魏難巾與魏製程元件發生碰撞而損義機率，同時 也可仙流提供水平分量氣流，以將原柄著於基板之表面 之^知轉程反應室之方向吹離，以避免齡隨著基板一同 因此，本發明亦可進一步 二影響製程品質的情況發生;除此之外，由於清潔 孔机並非以垂直嘴吹之方式與基板接觸 地降低擾流出現的機率。 以上所述僅為本發明之較佳 實施例，凡依本發明申請專利範圍 201201918 所做之均等變化與修飾1應屬本發明之涵蓋範圍。 【圖式簡單說明】 第1圖為先前技術製程反應系統之立體示意圖。 第2圖為第1圖所示之製程反齡統之側視圖。 第3圖為根據本發明較佳實施綱提出之雜反應系統之側視 圖。 第4圖為第3圖所示之噴氣裳置設置於對應閘口之位置上且位於 基板之上方的立體示意圖。 【主要元件符號說明】 10 、 100 製程反應系統 12 > 1〇2 基板 14、104 製程反應室 16 離子氣流吹出裝置 18 閘門 106 喷氣裝置 108 離子產生裝置 110 微粒清潔設備 112 閘口 114 清潔氣流 116 流動路徑 118 多孔層板Compared with the prior art, the ion gas blowing device is disposed vertically above the substrate to remove the particles at a very close distance. The present invention changes the position of the jet device to the position corresponding to the process reaction (as shown in FIG. 3). Shown at the position of the upper right side of the substrate transfer)' and the gas device blows out the waste between the substrate and the inflammatory angle between 15 degrees and 25 degrees, so that the present invention provides Process reaction system, 'charge not only the distance between the jet device and the substrate-specific height configuration, and the use of the above-mentioned clean gas shortage for the vertical separation of the filament flow under the pressure of the wire, thus reducing the substrate in the Wei difficult towel and Wei process components Collision and loss of probability, but also provide a horizontal component airflow to blow away the direction of the original handle on the surface of the substrate to avoid the age along with the substrate, the present invention also Further, the situation that affects the process quality may occur; in addition, since the cleaning hole machine does not contact the substrate in a vertical nozzle blowing manner, the probability of occurrence of the turbulence is reduced. The above description is only the preferred embodiment of the present invention, and the equivalent changes and modifications 1 made in accordance with the scope of the present application patent 201201918 are intended to be within the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view of a prior art process reaction system. Figure 2 is a side view of the process reverse age system shown in Figure 1. Figure 3 is a side elevational view of a hetero reaction system in accordance with a preferred embodiment of the present invention. Fig. 4 is a perspective view showing the jet skirt shown in Fig. 3 disposed at the position of the corresponding gate and above the substrate. [Main component symbol description] 10, 100 process reaction system 12 > 1〇2 substrate 14, 104 process chamber 16 ion gas flow device 18 gate 106 jet device 108 ion generator 110 particle cleaning device 112 gate 114 clean gas stream 116 flow Path 118 porous laminate