TWI402111B - Process system - Google Patents

Description

Process response system

The present invention relates to a process reaction system, and more particularly to a process reaction system for jetting a clean gas stream having an angle between 15 degrees and 25 degrees with a substrate to remove particles by means of a jet device.

Generally speaking, in the related processes of semiconductors, the particles on the substrate are one of the main sources of pollution, and the degree of the film generally has a great influence on the quality of the process. For example, in the exposure process of the photoresist layer on the substrate, if too many particles adhere to the substrate or enter the exposure machine, the photoresist pattern generated after the exposure may cause defects and errors. This results in poor exposure quality.

In the prior art, a common method for removing particles is to use an ion gas flow blowing device to blow off particles on the surface of the substrate to prevent the particles from adhering to the substrate; the related configuration of the above manner may be, for example, 1 and 2, FIG. 1 is a schematic perspective view of a prior art process reaction system 10, and FIG. 2 is a side view of the process reaction system 10 shown in FIG. 1. The process reaction system 10 is used for A reaction process (such as etching, exposure, etc.) is performed on a substrate 12, and the process reaction system 10 includes a process chamber 14 and an ion gas flow blowing device 16; the process chamber 14 has a gate 18, that is, the substrate 12 is passed through the gate 18. To enter the process reaction chamber 14; the ion gas flow blowing device 16 is disposed directly above the substrate 12, and the ion gas flow blowing device 16 is used to blow out the ion current to the surface of the substrate 12, so that the surface of the substrate 12 can be neutralized. The accumulated static charge simultaneously blows off the particles.

However, as shown in Fig. 2, this method requires that the ion gas flow blowing device 16 be vertically disposed directly above the substrate 12 at a relatively close distance so that the ion gas flow blowing device 16 can effectively blow up the particles, and therefore, The substrate 12 generates vibration during the transfer process, for example, vibration caused by the use of the robot arm, and the substrate 12 in the continuous vibration is likely to collide with the ion gas blowing device 16 disposed at a close distance, thereby causing damage to the substrate 12. The ion current jetted vertically onto the substrate 12 can also cause unnecessary spoilage, and in addition, the particles raised by the vertical jet of the ion gas stream (as shown in Fig. 2) are also easy. Therefore, it enters the process chamber 14 via the gate 18, which in turn adversely affects the reaction process performed in the process chamber 14.

Accordingly, the present invention provides a process reaction system for jetting a clean air stream having an angle between 15 degrees and 25 degrees with a substrate to remove particles by means of a jet device to solve the above problems.

The present invention provides a process reaction system for performing a reaction process on a substrate, the process reaction system including a process chamber having a gate, and a jet device disposed at a position corresponding to the gate Above and above the substrate, the air jet device is configured to generate a clean air flow, the clean air flow has a flow path, and the flow path has an angle with the substrate, the angle is substantially between 15 degrees and 25 degrees .

Please refer to FIG. 3, which is a side view of a process reaction system 100 according to a preferred embodiment of the present invention. The process reaction system 100 is used to perform a reaction process on a substrate 102, wherein the substrate 102 is Generally used in a semiconductor process, such as a printed substrate (hard substrate), a glass substrate or a flexible substrate (soft substrate); as shown in FIG. 3, the process reaction system 100 includes a process chamber 104, a The jet device 106, an ion generating device 108, and a particulate cleaning device 110; in this embodiment, the process chamber 104 is preferably an exposure machine, that is, the process reaction system 100 of the present invention is It is preferably applied to the exposure reaction process of the substrate 102, but not limited thereto, the process reaction system 100 can also be applied to other reaction processes requiring a particle cleaning step on the substrate, such as an etching process; and, in addition, a process chamber 104 has a gate 112 through which substrate 102 can enter the process chamber 104.

Next, please refer to FIG. 3 and FIG. 4 at the same time. FIG. 4 is a perspective view showing the air jet device 106 shown in FIG. 3 at a position corresponding to the gate 112 and above the substrate 102. The jet device 106 is used to generate a clean air stream 114, which is composed of a common cleaning gas, such as nitrogen, dry air (Clean Dry Air, CDA), etc.; as for the arrangement relationship between the air jet device 106 and the substrate 102, it can be as shown in FIG. As shown in FIG. 4, the air ejecting device 106 is disposed in front of the gate 112, so that the substrate 102 passes through the cleaning airflow 114 generated by the jet device 106 before entering the process chamber 104 via the gate 112, wherein As shown in FIG. 3, the clean airflow 114 has a flow path 116, and the flow path 116 has an angle θ with the substrate 102. It is worth noting that if the angle θ is excessive, the spoiler is easily generated and the particles are weakened. The effect of blowing away from the process chamber 104 is reversed. Conversely, if the angle θ is too small, the particles cannot be effectively removed from the substrate 102. In this embodiment, the angle θ is preferably between 15 degrees and 25 degrees In the circumference, wherein the actual test, when the angle θ is equal to 20 degrees, the air jet device 106 has better particle cleaning performance; in addition, the air jet device 106 is spaced apart from the substrate 102 by a specific height D to avoid collision with the substrate 102. In this embodiment, the specific height D is preferably equal to 100 mm.

In the aspect of the ion generating device 108, it is disposed in the range of the flow path 116 of the clean gas stream 114, so that ions generated by the ion generating device 108 can smoothly enter the clean gas stream 114, thereby causing ionization of the clean gas stream 114. As can be seen from FIG. 3 and FIG. 4, in this embodiment, the ion generating device 108 is substantially in the same vertical plane as the jet device 106 and is preferably located below the jet device 106, but is not limited thereto. It can also be placed above the jet device 106 or other locations within the process reaction system 100 that allow ions generated by the ion generating device 108 to smoothly enter the clean gas stream 114.

Further, in the aspect of the particulate cleaning apparatus 110, the particulate cleaning apparatus 110 is used to carry the particles blown from the substrate 102 by the cleaned airflow 114, and is disposed at a position corresponding to the substrate 102, for example, assuming that the particles are cleaned. The device 110 is a vertical flow cleaning device, and the particle cleaning device 110 can provide a top-down airflow to guide the movement of the particles lifted by the cleaning airflow 114 to avoid the particles again. The attachment to the substrate 102 occurs; it is noted that the type of the particulate cleaning device 110 is not limited to the above-described vertical laminar flow cleaning device, and other common particle cleaning devices such as a turbulent flow (Conventional Flow) can also be used. ) or horizontal flow cleaning equipment, etc., depending on the configuration of the process, depending on the clean grade requirements of the process reaction system 100.

The particle cleaning process of the process reaction system 100 is described in detail herein. Please refer to FIG. 3 and FIG. 4 at the same time; in this embodiment, the process reaction system 100 is utilized in a common transportation mode in a semiconductor process (eg, Roller transfer or robotic transfer, etc.) to feed the substrate 102 into the process chamber 104 via the gate 112, whereby the corresponding reaction process begins on the substrate 102; and as shown in FIG. 4 - Before the Y-axis direction is sent to the process chamber 104, the first step of particle cleaning is performed to ensure process quality, that is, before the substrate 102 enters the process chamber 104 via the gate 112, it is disposed above the gate 112. The jet device 106 will spray the clean gas stream 114 onto the substrate 102. At this time, as described above, since the flow path 116 of the clean gas stream 114 has an angle θ with the substrate 102 (the preferred value is approximately equal to 20 degrees), Therefore, when the cleaning airflow 114 contacts the substrate 102, the cleaning airflow 114 can not only pressurize the substrate 102 under a vertical component airflow in the -Z-axis direction, thereby suppressing the vibration of the substrate 102 itself. Further, the probability of damage of the substrate 102 colliding with other process components during transportation is reduced. At the same time, the cleaning airflow 114 can also provide a horizontal component airflow to the substrate 102 in the +Y-axis direction, thereby generating an original adhesion. The effect of the particles on the surface of the substrate 102 blowing away from the process chamber 104.

It should be noted that, as can be seen from FIG. 3 and FIG. 4, since the ion generating device 108 is disposed below the air jet device 106, the ions radiated from the ion generating device 108 are sprayed with the clean airflow at the jet device 106. 114 enters the clean gas stream 114 during the process on the substrate 102 to cause ionization of the clean gas stream 114. Therefore, while the clean gas stream 114 blows off the particles attached to the substrate 102, the ions located in the clean gas stream 114 are also The electrostatic charges on the substrate 102 are neutralized with each other, so that not only the electrostatic attraction between the particles and the substrate 102 can be removed, but also the particles can be more easily removed, and excessive accumulation of static charges on the substrate 102 can be avoided. The occurrence of Electrostatic Discharge (ESD) occurs.

In addition to utilizing the clean gas stream 114 generated by the gas jet 106 to blow particles away from the substrate 102 and neutralize the static charge on the substrate 102, the process reaction system 100 can further utilize the particulate cleaning device 110 to reduce particulate reattachment to the particles. The probability of the substrate 102 is up to the effect of removing particles, that is, when the particles attached to the substrate 102 are blown away by the cleaning gas stream 114, as can be seen from FIG. 3, the particle cleaning device 110 provides the blowing from top to bottom. The air flow (as indicated by the arrow direction in Fig. 3) prevents the particles from returning to the substrate 102 again, that is, when the particles are blown away by the clean air stream 114 and suspended in the air, the particles are A flow of air blown from top to bottom is moved in the -Z axis direction until it is discharged from the porous layer plate 118 of the particle cleaning device 110 as shown in Fig. 3 along the air flow direction, so that removal can be achieved. The purpose of the particles.

It should be noted that the ion generating device 108 and the particulate cleaning device 110 can be an omitted component, thereby simplifying the configuration of the process reaction system 100. In other words, the process reaction system 100 can utilize only the jet device 106. The particles adhering to the substrate 102 are removed, and the configuration is determined depending on the actual process requirements of the process reaction system 100.

Compared with the prior art, the ion gas blowing device is disposed vertically above the substrate to remove the particles at a very close distance. The present invention changes the position of the jet device to the gate of the corresponding process chamber (as shown in FIG. 3). Located at the upper right side of the substrate 102), and using a jet device to spray a clean air stream with an angle between 15 degrees and 25 degrees between the substrates to remove particles, the process reaction system provided by the present invention is not only The arrangement of the jet device and the substrate at a certain height can be utilized, and the vertical component airflow is used to press the substrate by the cleaning airflow to suppress the vibration of the substrate, thereby reducing the probability of the substrate colliding with other process components during transportation, and also The horizontal airflow can be provided by the clean airflow to blow away the particles originally attached to the surface of the substrate away from the process chamber to prevent the particles from affecting the process quality as the substrate enters the process chamber together; In addition, since the cleaning airflow is not in contact with the substrate in a vertical blowing manner, The present invention can further reduce the probability of occurrence of spoiler.

The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.

10,100. . . Process response system

12, 102. . . Substrate

14, 104. . . Process chamber

16. . . Ion gas flow blowing device

18. . . Gate

106. . . Jet device

108. . . Ion generating device

110. . . Particle cleaning equipment

112. . . Gate

114. . . Clean airflow

116. . . Flow path

118. . . Porous laminate

Figure 1 is a schematic perspective view of a prior art process reaction system.

Figure 2 is a side view of the process reaction system shown in Figure 1.

Figure 3 is a side elevational view of a process reaction system in accordance with a preferred embodiment of the present invention.

Fig. 4 is a perspective view showing the air jet device shown in Fig. 3 disposed at a position corresponding to the gate and above the substrate.

100. . . Process response system

102. . . Substrate

104. . . Process chamber

106. . . Jet device

108. . . Ion generating device

110. . . Particle cleaning equipment

112. . . Gate

114. . . Clean airflow

116. . . Flow path

118. . . Porous laminate

Claims (8)

A process reaction system for performing a reaction process on a substrate, the process reaction system comprising: a process chamber having a gate; and a jet device disposed at a position corresponding to the gate Located above the substrate, the air jet device is configured to generate a clean air flow, the clean air flow has a flow path, and the flow path has an angle with the substrate, the angle is substantially between 15 degrees and 25 degrees; An ion generating device substantially on the same vertical plane as the jet device and located outside one of the jet devices, the ion generating device for generating ions to enter the clean gas stream to ionize the clean gas stream. The process reaction system of claim 1, wherein the included angle is about 20 degrees. The process reaction system of claim 1, wherein the jet device is at a specific height from the substrate. The process reaction system of claim 3, wherein the specific height is substantially equal to 100 mm. The process reaction system of claim 1, wherein the ion generating device is disposed below the jet device. The process reaction system of claim 1 further comprising: a particulate cleaning device disposed at a position corresponding to the substrate, the particulate cleaning device being used to be carried away from the substrate by the cleaning airflow Particles. The process reaction system of claim 6, wherein the particulate cleaning device is a vertical flow cleaning device. The process reaction system of claim 1, wherein the process chamber is an exposure machine.