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SG10201610541UA - Composition and process for stripping photoresist from a surface including titanium nitride - Google Patents

Composition and process for stripping photoresist from a surface including titanium nitride

Info

Publication number
SG10201610541UA
SG10201610541UA SG10201610541UA SG10201610541UA SG10201610541UA SG 10201610541U A SG10201610541U A SG 10201610541UA SG 10201610541U A SG10201610541U A SG 10201610541UA SG 10201610541U A SG10201610541U A SG 10201610541UA SG 10201610541U A SG10201610541U A SG 10201610541UA
Authority
SG
Singapore
Prior art keywords
composition
titanium nitride
surface including
including titanium
stripping photoresist
Prior art date
Application number
SG10201610541UA
Other languages
English (en)
Inventor
Emanuel I Cooper
Marc Conner
Michael Owens
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of SG10201610541UA publication Critical patent/SG10201610541UA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/423Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02Inorganic compounds ; Elemental compounds
    • C11D3/04Water-soluble compounds
    • C11D3/042Acids
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/36Organic compounds containing phosphorus
    • C11D3/364Organic compounds containing phosphorus containing nitrogen
    • H10P50/287

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Manufacturing Of Steel Electrode Plates (AREA)
SG10201610541UA 2012-05-18 2013-05-17 Composition and process for stripping photoresist from a surface including titanium nitride SG10201610541UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201261648951P 2012-05-18 2012-05-18

Publications (1)

Publication Number Publication Date
SG10201610541UA true SG10201610541UA (en) 2017-01-27

Family

ID=49584341

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201610541UA SG10201610541UA (en) 2012-05-18 2013-05-17 Composition and process for stripping photoresist from a surface including titanium nitride
SG11201407650VA SG11201407650VA (en) 2012-05-18 2013-05-17 Composition and process for stripping photoresist from a surface including titanium nitride

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201407650VA SG11201407650VA (en) 2012-05-18 2013-05-17 Composition and process for stripping photoresist from a surface including titanium nitride

Country Status (8)

Country Link
US (1) US9678430B2 (zh)
EP (1) EP2850495A4 (zh)
JP (1) JP2015517691A (zh)
KR (1) KR20150016574A (zh)
CN (1) CN104487900B (zh)
SG (2) SG10201610541UA (zh)
TW (1) TW201406932A (zh)
WO (1) WO2013173738A1 (zh)

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SG10201610541UA (en) 2012-05-18 2017-01-27 Entegris Inc Composition and process for stripping photoresist from a surface including titanium nitride
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KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
KR102338526B1 (ko) 2013-07-31 2021-12-14 엔테그리스, 아이엔씨. Cu/W 호환성을 갖는, 금속 하드 마스크 및 에칭-후 잔여물을 제거하기 위한 수성 제형
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CN105960699B (zh) 2013-12-20 2019-11-01 恩特格里斯公司 非氧化性强酸用于清除离子注入抗蚀剂的用途
KR102290209B1 (ko) 2013-12-31 2021-08-20 엔테그리스, 아이엔씨. 규소 및 게르마늄을 선택적으로 에칭하기 위한 배합물
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CN105087009B (zh) * 2014-04-30 2017-06-30 东莞市钜升金属科技有限公司 一种用于ito膜刻蚀的工艺
US10032633B1 (en) * 2017-01-17 2018-07-24 International Business Machines Corporation Image transfer using EUV lithographic structure and double patterning process
JP7186751B2 (ja) * 2020-08-28 2022-12-09 野村マイクロ・サイエンス株式会社 レジスト剥離方法、レジスト剥離装置、及び、前処理方法
KR102802331B1 (ko) 2020-12-29 2025-05-07 엔테그리스, 아이엔씨. 금속 산화물 하드 마스크의 선택적 제거
CN113479860B (zh) * 2021-07-01 2023-08-11 中国石油大学(华东) 一种SbPO4/氮掺杂碳复合材料的制备方法

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Also Published As

Publication number Publication date
WO2013173738A1 (en) 2013-11-21
KR20150016574A (ko) 2015-02-12
EP2850495A4 (en) 2016-01-20
SG11201407650VA (en) 2014-12-30
JP2015517691A (ja) 2015-06-22
EP2850495A1 (en) 2015-03-25
US9678430B2 (en) 2017-06-13
CN104487900B (zh) 2019-07-23
US20150168843A1 (en) 2015-06-18
TW201406932A (zh) 2014-02-16
CN104487900A (zh) 2015-04-01

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